JP6199115B2 - マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び半導体デバイスの製造方法 - Google Patents
マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び半導体デバイスの製造方法 Download PDFInfo
- Publication number
- JP6199115B2 JP6199115B2 JP2013172069A JP2013172069A JP6199115B2 JP 6199115 B2 JP6199115 B2 JP 6199115B2 JP 2013172069 A JP2013172069 A JP 2013172069A JP 2013172069 A JP2013172069 A JP 2013172069A JP 6199115 B2 JP6199115 B2 JP 6199115B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- mask blank
- transfer
- manufacturing
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 213
- 238000012546 transfer Methods 0.000 title claims description 190
- 238000004519 manufacturing process Methods 0.000 title claims description 115
- 239000004065 semiconductor Substances 0.000 title claims description 31
- 238000000034 method Methods 0.000 claims description 93
- 238000004088 simulation Methods 0.000 claims description 55
- 239000010409 thin film Substances 0.000 claims description 42
- 238000012937 correction Methods 0.000 claims description 38
- 230000008569 process Effects 0.000 claims description 27
- 238000004364 calculation method Methods 0.000 claims description 15
- 238000001459 lithography Methods 0.000 claims description 8
- 239000010408 film Substances 0.000 description 87
- 230000003287 optical effect Effects 0.000 description 61
- 230000004075 alteration Effects 0.000 description 47
- 238000005286 illumination Methods 0.000 description 26
- 238000005498 polishing Methods 0.000 description 26
- 230000006870 function Effects 0.000 description 24
- 230000010363 phase shift Effects 0.000 description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 238000005530 etching Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 239000011651 chromium Substances 0.000 description 13
- 230000035882 stress Effects 0.000 description 13
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 12
- 229910052804 chromium Inorganic materials 0.000 description 12
- 238000009826 distribution Methods 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 229910052723 transition metal Inorganic materials 0.000 description 12
- 150000003624 transition metals Chemical class 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000011521 glass Substances 0.000 description 9
- 238000005259 measurement Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 238000003908 quality control method Methods 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 210000001747 pupil Anatomy 0.000 description 4
- 238000005546 reactive sputtering Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 229910021350 transition metal silicide Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 150000001845 chromium compounds Chemical class 0.000 description 3
- 239000008119 colloidal silica Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000003623 enhancer Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- -1 molybdenum silicide compound Chemical class 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000005383 fluoride glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 150000003482 tantalum compounds Chemical class 0.000 description 1
Images
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013172069A JP6199115B2 (ja) | 2013-08-22 | 2013-08-22 | マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び半導体デバイスの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013172069A JP6199115B2 (ja) | 2013-08-22 | 2013-08-22 | マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び半導体デバイスの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015040985A JP2015040985A (ja) | 2015-03-02 |
| JP2015040985A5 JP2015040985A5 (enExample) | 2016-07-14 |
| JP6199115B2 true JP6199115B2 (ja) | 2017-09-20 |
Family
ID=52695175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013172069A Expired - Fee Related JP6199115B2 (ja) | 2013-08-22 | 2013-08-22 | マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び半導体デバイスの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6199115B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI694304B (zh) * | 2015-06-08 | 2020-05-21 | 日商Ａｇｃ股份有限公司 | Ｅｕｖ微影術用反射型光罩基底 |
| JP6523864B2 (ja) * | 2015-08-20 | 2019-06-05 | 東芝メモリ株式会社 | インプリント装置およびインプリント方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5296260B2 (ja) * | 2010-03-30 | 2013-09-25 | Ｈｏｙａ株式会社 | マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法及び半導体デバイスの製造方法 |
| WO2012102313A1 (ja) * | 2011-01-26 | 2012-08-02 | 旭硝子株式会社 | フォトマスクの製造方法 |
| JP4819191B2 (ja) * | 2011-04-14 | 2011-11-24 | Ｈｏｙａ株式会社 | マスクブランク用基板、マスクブランク、フォトマスクおよび半導体デバイスの製造方法 |
-
2013
- 2013-08-22 JP JP2013172069A patent/JP6199115B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015040985A (ja) | 2015-03-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5690981B1 (ja) | マスクブランク用基板、マスクブランク、転写用マスク及びこれらの製造方法並びに半導体デバイスの製造方法 | |
| JP6033987B1 (ja) | マスクブランク用基板、マスクブランク及びこれらの製造方法、転写用マスクの製造方法並びに半導体デバイスの製造方法 | |
| TWI497191B (zh) | 光罩基底、轉印用光罩、轉印用光罩之製造方法及半導體裝置之製造方法 | |
| JPWO2018135468A1 (ja) | 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法 | |
| JP2015062049A (ja) | マスクブランクス、位相シフトマスク及びその製造方法 | |
| JP2015111283A5 (enExample) | ||
| KR20190100251A (ko) | 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 및 반도체 장치의 제조 방법 | |
| JP6266286B2 (ja) | マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び半導体デバイスの製造方法 | |
| JP6199115B2 (ja) | マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び半導体デバイスの製造方法 | |
| JP5881417B2 (ja) | マスクブランク用合成石英ガラス基板の複屈折仕様決定方法、マスクブランク用合成石英ガラス基板の製造方法、マスクブランクの製造方法、及び転写用マスクの製造方法 | |
| US10983427B2 (en) | Method for manufacturing a mask blank substrate, method for manufacturing a mask blank, method for manufacturing a transfer mask, method for manufacturing a semiconductor device, a mask blank substrate, a mask blank, and a transfer mask | |
| JP5596111B2 (ja) | 半導体デバイスの製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160526 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160526 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170228 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170307 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170426 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170815 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170823 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6199115 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |