JP6189661B2 - Semiconductor light emitting device - Google Patents

Description

  The present invention relates to a semiconductor light emitting device, and more specifically, a semiconductor laser element, a light diffusion member that diffuses laser light emitted from the semiconductor laser element, and a wavelength conversion that converts the wavelength of the diffusion laser light from the light diffusion member. The present invention relates to a semiconductor light emitting device including a member.

  Conventionally, as this type of semiconductor light emitting device, for example, there is one having a structure shown in FIG.

  The block portion 82 is provided on a disc-shaped stem 81 having leads 80, and the semiconductor laser element 83 is fixed to the side surface of the block portion 82. A cylindrical cap 84 extending in the vertical direction from the vicinity of the periphery of the upper surface of the stem 81 is provided on the upper surface of the stem 81 so as to cover the block portion 82 and the semiconductor laser element 83 fixed to the block portion 82.

  An opening 85 is provided in the upper part of the cap 84, and a glass member 87 is placed via a bonding layer 86 so as to cover the opening 85 from above, and wavelength selectivity is provided on the glass member 87. A wavelength conversion member 89 is placed with a reflective film 88 interposed therebetween.

  As a result, the laser light emitted from the semiconductor laser element 83 passes through the opening 85 of the cap 84, passes through the reflection film 88, enters the wavelength conversion member 89, and is wavelength-converted by the wavelength conversion member 89. And light (laser light) that is not wavelength-converted is emitted from the wavelength conversion member 89, and mixed color (additive color mixture) light is obtained by color mixture (additive color mixture) of the emitted light.

  At this time, a part of the light (scattered light) converted in wavelength by the wavelength conversion member 89 is directed toward the cap 84, but most of the light is reflected by the reflective film 88 before reaching the cap 84, and is reflected light. Contributes as the emitted light of the semiconductor laser device 90, thereby increasing the light extraction efficiency of the semiconductor laser device 90.

JP 2009-105125 A

  Incidentally, the semiconductor laser device 90 disclosed in Patent Document 1 is not provided with a direct or indirect positioning means for the wavelength conversion member 89 with respect to the cap 84 (particularly, the opening 85 of the cap 84). Therefore, in the manufacturing process, when the wavelength conversion member 89 is displaced with respect to the cap 84 and the center of the wavelength conversion member 89 is located at a position shifted from the center of the opening 85, in other words, the center of the wavelength conversion member 89. Is positioned at a position shifted from the optical axis of the laser beam, the laser beam irradiated on the wavelength conversion member 89 is irradiated at a position shifted from the center with respect to the wavelength conversion member 89. For this reason, the intensity distribution in the surface direction of the laser light incident on the wavelength conversion member 89 is not uniform, and the emitted light from the semiconductor laser device 90 has uneven brightness and uneven chromaticity.

  Similarly, when the position shift of the wavelength conversion member 89 with respect to the cap 84 occurs, and a portion that is not covered with the wavelength conversion member 89 is generated in the opening 85, a part of the laser light that has passed through the opening 85 is Without being incident on the wavelength conversion member 89, or after being transmitted through one or both of the glass member 87 and the reflection film 88, the light is emitted to the outside. Therefore, the emitted light from the semiconductor laser device 90 has a portion with a large hue component of the laser beam and has chromaticity unevenness.

  Further, since the phosphor contained in the wavelength conversion member 89 has light scattering properties, the light emitted toward the outside without passing through the wavelength conversion member 89 does not become scattered light. Therefore, when this semiconductor laser device 90 is used as a light source for an illumination device or a display device, there is a risk that the safety (eye safety) for the eyes of the viewer is impaired.

  Furthermore, in the manufacturing process, when the bonding layer 86 for bonding the glass member 87 to the cap 84 protrudes onto the optical path of the laser beam in the opening 85, the laser beam hits that portion, and the optical path is disturbed or blocked. The intensity distribution is uneven and the emitted light from the semiconductor laser device 90 has uneven brightness and uneven chromaticity.

  Accordingly, the present invention has been made in view of the above problems, and the object of the present invention is to provide a semiconductor laser element, a light diffusing member for diffusing laser light emitted from the semiconductor laser element, and a diffusion from the light diffusing member. An object of the present invention is to provide a semiconductor light-emitting device that includes a wavelength conversion member that converts the wavelength of laser light, and in which emitted light has a uniform luminance distribution and chromaticity distribution and can reliably ensure eye safety for a viewer. .

In order to solve the above problems, the invention described in claim 1 of the present invention includes a base having a through hole, a light diffusing member and a wavelength converter disposed on the base so as to close the through hole. A light guide having a member , a semiconductor laser element disposed so that emitted light is emitted toward the through-hole, and side surfaces of the light diffusion member and the wavelength conversion member constituting the light guide A light diffusing and reflecting member that integrally covers the light guide, wherein the light guide has the light diffusing member located on the semiconductor laser side, the wavelength converting member located on the light emitting side, and the light emitting side light emitting side. The surface is a flat surface, and the light diffusing member has a spherical convex portion projecting toward the semiconductor laser side at a central portion of the surface facing the semiconductor laser, and a flat portion around the convex portion. The planar portion is on the base in a state where the convex portion is fitted in the through hole. A is, is fixed to the periphery of the through hole, the light emitted from the semiconductor laser element to the protruding portion is characterized in that the irradiation.

The invention described in claim 2 of the present invention is characterized in that, in claim 1, the height of the convex portion is equal to or less than the length of the through hole .

Further, in the invention described in claim 3 of the present invention, in any one of claim 1 or claim 2 , the convex portion is located at a center position in a cross section perpendicular to the longitudinal direction of the through hole. It is a feature.

  A semiconductor light emitting device according to the present invention includes a light guide body constituted by a light diffusing member having a convex portion and a wavelength conversion member, and a semiconductor substrate in which the convex portion is fitted in the through hole on the base having the through hole. The laser light emitted from the laser is incident from the convex portion of the light diffusing member constituting the light guide, so that the diffused light having a hue different from that of the laser light is emitted from the wavelength conversion member.

  As a result, it was possible to obtain emitted light having high luminance and uniform luminance distribution and chromaticity distribution from the semiconductor light emitting device.

It is a top view of embodiment concerning the semiconductor light-emitting device of this invention. It is AA sectional drawing of FIG. It is explanatory drawing of the manufacturing method of a wavelength conversion module. It is an optical explanatory view of an embodiment. It is explanatory drawing regarding reflection of a laser beam. Similarly, it is explanatory drawing regarding reflection of a laser beam. It is explanatory drawing regarding the position shift of the light guide with respect to the 4th holder. Similarly, it is explanatory drawing regarding the position shift of the light guide with respect to the 4th holder. It is explanatory drawing regarding the shape of the convex part of a light-diffusion member. Similarly, it is explanatory drawing regarding the shape of the convex part of a light-diffusion member. It is explanatory drawing of a prior art example.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. 1 to 10 (the same parts are denoted by the same reference numerals). The embodiments described below are preferable specific examples of the present invention, and thus various technically preferable limitations are given. However, the scope of the present invention particularly limits the present invention in the following description. Unless stated to the effect, the present invention is not limited to these embodiments.

  FIG. 1 is a plan view of the semiconductor light emitting device of this embodiment, and FIG. 2 is a cross-sectional view taken along the line AA of FIG.

  As shown in FIGS. 1 and 2, the semiconductor light-emitting device 5 of the present embodiment includes a semiconductor laser element 2 that oscillates blue laser light at the inner lower portion of a cylindrical first holder 10 having a flange portion 11. The provided semiconductor laser 1 is inserted, and a convex lens-shaped condensing lens 3 for condensing the laser light emitted from the semiconductor laser 1 is disposed in the upper part inside.

  On the upper surface 12 of the first holder 10, an annular second holder 20 that rises from the peripheral edge of the first holder 10 along the peripheral edge is placed, and at the same time the lower outer surface is A cylindrical third holder 30 held on the inner surface of the second holder 20 is disposed. The interior of the third holder 30 is a laser beam path 31 through which the laser beam emitted from the semiconductor laser 1 passes.

  A wavelength conversion module 70 is provided at the upper end of the third holder 30.

  The wavelength conversion module 70 has a circular fourth holder 40 having a bottomed opening having a through hole 42 in the bottom 41, and the bottom 41 is supported and fixed to the upper end of the third holder 30. The fourth holder 40 is made of a metal material such as aluminum or stainless steel, and the inner surface of the through hole 42 is roughened to form a light diffusive reflecting surface 44 from the uneven surface.

  A light diffusion member 52 that receives laser light emitted from the semiconductor laser 1, converts the laser light into diffused light, and emits the laser light emitted from the semiconductor laser 1, and is emitted from the light diffusion member 52. The wavelength conversion member 60 that receives the diffused light, converts it into light having a wavelength different from the wavelength of the diffused light, and emits the light is bonded by a transparent adhesive (not shown) having good heat conduction and integrated. A disc-shaped light guide 50 is provided. In this case, for example, a silicone resin is used as the adhesive.

The light diffusing member 52 is a ceramic made of Al ₂ O ₃ formed so as to have light diffusibility, for example, by firing conditions, and the wavelength conversion member 60 is made of, for example, Al ₂ O ₃ , for example, yttrium aluminum. YAG / Ce phosphor particles obtained by adding cerium (Ce) to garnet (YAG) are used. YAG / Ce phosphor particles are yellow phosphor particles that are converted to yellow light by being excited by blue light, for example, blue light. The light diffusing member 52 may be formed by mixing and dispersing light diffusing particles in a transparent resin. The wavelength conversion member 60 may be formed of a transparent resin in which phosphor particles are mixed and dispersed.

  In the light guide 50, the light diffusion member 52 is located on the semiconductor laser 1 side, and the light diffusion member 52 has a spherical convex portion 53 that protrudes toward the semiconductor laser 1 at the center of the surface facing the semiconductor laser 1. With the convex portion 53 fitted in the through hole 42 of the bottom portion 41 of the fourth holder 40, the flat portion 54 is attached to the inner surface of the bottom portion 41 of the fourth holder 40 with an adhesive 65. Bonded and fixed. In this case, for example, a silicone resin is used as the adhesive 65.

  The convex portion 53 of the light diffusing member 52 fitted into the through hole 42 of the bottom 41 of the fourth holder 40 is accommodated in the through hole 42 so as not to protrude from the through hole 42. Is set to The convex portion 53 of the light diffusing member 52, the semiconductor laser element 2, and the condenser lens 3 are arranged so that their optical axes are positioned on the same straight line (X).

  Further, the convex portion 53 is located at the center position in the cross section perpendicular to the longitudinal direction of the through hole 42.

  A light diffusion reflection member 67 is filled in a gap between the side wall portion 43 of the fourth holder 40 and the light guide 50 so as to cover the periphery of the light guide 50. The light diffusing and reflecting member 67 integrally covers the respective side surfaces of the light diffusing member 52 and the wavelength converting member 60 that constitute the light guide 50, and does not cover the upper surface (light emitting surface) 62 of the wavelength converting member 60. The side wall 43 is filled so as not to overflow.

The light diffusion reflection member 67 is a high reflection member made of, for example, transparent silicone resin, for example, titanium oxide (TiO ₂ ), zinc oxide (ZnO), boron nitride (B ₂ O ₃ ), aluminum nitride (AlN), or the like. Is mixed and dispersed.

  Next, a method for manufacturing the above-described wavelength conversion module 70 will be described with reference to FIGS.

First, the light guide body preparing step of FIG. 3 (a), was added and the light diffusing member 52 made of _Al 2 _{O 3,} yttrium aluminum garnet (YAG) on _Al 2 _{O 3} cerium (Ce) YAG / A wavelength conversion member 60 formed by mixing and diffusing Ce phosphor particles is bonded with a silicone resin (not shown) having good thermal conductivity, and the silicone resin is temporarily heated at 100 ° C. for 1 hour under heat curing conditions. After curing, the light guide 50 is manufactured by performing the main curing under the heat curing condition at 150 ° C. for 2 hours.

  Next, in the adhesive application step of FIG. 3B, an adhesive 65 made of a silicone resin having a uniform thickness around the through hole 42 on the top surface of the bottom 41 of the fourth holder 40 and good thermal conductivity. Apply.

  Next, in the light guide bonding process of FIG. 3C, the light guide 50 is moved to the opening 45 of the fourth holder 40, and the convex portion 53 of the light diffusion member 52 is moved to the bottom of the fourth holder 40. 41. The silicone resin 65 is placed on and bonded to the adhesive 65 in a state of being fitted in the through-hole 42 of 41, and the silicone resin 65 is temporarily cured at 100 ° C. for 1 hour and then cured at 150 ° C. for 2 hours. Perform main curing.

Finally, in the light diffusing and reflecting member filling step of FIG. 3D, titanium oxide (TiO ₂ ), which is a highly reflective member, is placed on the silicone resin in the gap between the side wall 43 of the fourth holder 40 and the light guide 50. The light diffusing and reflecting member 67 mixed and dispersed is filled and the silicone resin is cured at 150 ° C. for 4 hours under heat curing conditions.

  Next, an optical description of the semiconductor light emitting device having the above-described configuration will be given in detail with reference to FIG.

  First, blue laser light (hereinafter abbreviated as “laser light”) oscillated by the semiconductor laser element 2 and emitted from the semiconductor laser 1 is guided through the condensing lens 3 positioned above and emitted ( L) advances in the laser light path 31 of the third holder 30 toward the convex portion 53 of the light diffusing member 52 while condensing, and enters the light diffusing member 52 from the light incident surface 55 of the convex portion 53.

  Most of the laser light (L1) incident on the light diffusing member 52 is diffused by the light diffusing particles mixed in the light diffusing member 52, and the diffused light is a plane opposite to the convex portion 53 (light emitting surface). The diffused laser light emitted from 56 passes through an adhesive (not shown) and is irradiated on the entire lower surface (light incident surface) 61 of the wavelength conversion member 60 with a uniform intensity distribution.

  The diffused laser light applied to the light incident surface 61 of the wavelength conversion member 60 enters the wavelength conversion member 60 from the light incident surface 61, and the laser light (blue light) is directly used as the wavelength conversion member for a part of the incident light. Blue that is transmitted through the interior 60 and exits from the upper surface (light exit surface) 62 to the outside, and is partially wavelength-excited by exciting phosphor (yellow phosphor) particles mixed in the wavelength conversion member 60. Yellow light that is complementary color light is emitted from the light exit surface 62 to the outside. Then, white diffused light can be obtained by additive color mixture of the blue diffused light and the yellow diffused light emitted outward from the light emitting surface 62.

  The diffused laser light emitted from the semiconductor laser 1 and incident on the light diffusing member 52 and diffused by the light diffusing particles mixed and dispersed in the light diffusing member 52 is also directed toward the side surface 57 of the light diffusing member 52. There is also a heading (L2). In that case, the side surface 57 of the light diffusing member 52 is covered with a light diffusing and reflecting member 67 filled so as to cover the periphery of the light guide 50, and the diffused laser light that has reached the side surface 57 of the light diffusing member 52 is The reflected light returns to the light diffusing member 52 side by being reflected on the contact surface of the light diffusing and reflecting member 67 in contact with the side surface 57 of the light diffusing member 52 and the vicinity thereof. A part of the diffused laser light that has returned into the light diffusing member 52 is emitted from the light emitting surface 56 of the light diffusing member 52, passes through the adhesive, and passes from the light incident surface 61 of the wavelength converting member 60 to the wavelength converting member 60. And diffused as a blue diffused light and a yellow diffused light from the light exit surface 62 of the wavelength conversion member 60 to obtain white diffused light by additive color mixing.

  Further, the diffused laser light emitted from the light diffusing member 52 and entering the wavelength converting member 60 via the adhesive may be directed directly to the side surface 63 of the wavelength converting member 60. At the same time, some yellow light whose wavelength is converted by the yellow phosphor particles excited by the diffused laser light is also directed toward the side surface 63 of the wavelength conversion member 60. In that case, the laser light (blue laser light) and the yellow diffused light that have directly reached the side surface 63 of the wavelength conversion member 60 are reflected on the contact surface of the light diffusion reflection member 67 that contacts the side surface 63 of the wavelength conversion member 60 and in the vicinity thereof. The reflected light returns to the wavelength conversion member 60 side, and a part of each is emitted to the outside as a blue diffused light and a yellow diffused light from the light emitting surface 62 of the wavelength conversion member 60 to obtain white diffused light by additive color mixing. It is done.

  As described above, the light guide 50 is formed by filling the light diffuser reflection member 67 around the light guide 50 including the light diffusion member 52 and the wavelength conversion member 60 so as to cover the periphery of the light guide 50. The light directed toward the side of each of the light diffusing member 52 and the wavelength converting member 60 constituting the light diffusing member 52 can also contribute as the light emitted from the semiconductor light emitting device.

  As a result, the utilization efficiency of the laser light emitted from the semiconductor laser 1 is increased, and high-luminance outgoing light can be obtained from the semiconductor light emitting device.

  Further, the semiconductor light emitting device emits light to each of the light incident / exit surfaces (55, 56) and (61, 62) of the light diffusing member 52 and the wavelength converting member 60 disposed in the optical path of the laser light. White diffused light by additive color mixture of blue diffused light and yellow diffused light by laser light (blue diffused laser light) diffused by light diffusing particles mixed and dispersed in the light diffusing member 52 without performing diffusion treatment Can be obtained.

  For this reason, the light diffusion characteristics generated when the diffusion process is performed on any of the light incident / exit surfaces (55, 56), (61, 62) of the light diffusion member 52 and the wavelength conversion member 60 are subjected to the diffusion process. Without depending on the state of the diffusion treatment on the surface, it is possible to obtain emitted light having a uniform luminance distribution and chromaticity distribution based on uniform light diffusion characteristics from the semiconductor light emitting device.

  The light diffusing member 52 has a spherical convex portion 53 that protrudes toward the semiconductor laser 1 and fits into the through hole 42 of the fourth holder 40. The light diffusing member 52 has the thickest thickness. Laser light emitted from the semiconductor laser is incident from the convex portion 53 of the part.

  Therefore, the light path length of the light diffusing member 52 from the light incident surface 55 on which the laser light is incident to the light emitting surface 56 on which the diffused laser light is emitted can be increased, so that the light diffusibility is increased and the luminance distribution and chromaticity are increased. It contributes to the uniformity of distribution. Moreover, since the convex portion 53 that contributes to the increase in the optical path length is accommodated in the through hole 42 of the fourth holder 40, the optical path length can be increased without increasing the thickness of the entire light diffusion member 52. Can be planned.

  By the way, the laser light (L) emitted from the semiconductor laser 1 and applied to the light incident surface 55 of the convex portion 53 of the light diffusing member 52 is mainly incident into the light diffusing member 52 from the light incident surface 55. Some of the light is reflected by the light incident surface 55.

  In this case, as shown in FIG. 5 (an explanatory diagram relating to the reflection of laser light), when the convex portion 53 protrudes from the through hole 42 in the bottom portion 41 of the fourth holder 40, the light incident surface of the convex portion 53. The reflected light (L5) by 55 goes in the direction of the range (A) outside the light diffusion member 52 as it is, and does not contribute to the emitted light of the semiconductor light emitting device.

  On the other hand, as shown in FIG. 6 (an explanatory diagram relating to the reflection of laser light), when the entire convex portion 53 is completely within the through hole 42 of the bottom 41 of the fourth holder 40, the light incident surface The light directed to the range of (B) among the reflected light (L5) by 55 is the light diffusing and reflecting surface 44 on the inner surface of the through hole 42 of the bottom 41 of the fourth holder 40, which is located on the side of the convex portion 53. The irradiated light is diffusely reflected by the light diffusing and reflecting surface 44, and a part thereof returns into the light diffusing member 52, which contributes to the emitted light of the semiconductor light emitting device.

  Therefore, the height of the convex portion 53 of the light diffusing member 52 is preferably equal to or less than the length of the through hole 42 of the bottom portion 41 of the fourth holder 40. In addition, it is preferable that the minimum value of the height of the convex part 53 shall be 5 micrometers which becomes the minimum height which can be shape | molded at the time of manufacture.

  Further, since the light diffusion reflection member 67 is filled in the gap between the side wall portion 43 of the fourth holder 40 and the light guide 50, the light diffusion member 52 and the wavelength conversion member 60 constituting the light guide 50 are respectively used. The light traveling toward the side surfaces 57 and 63 is reflected at and near the contact surface of the light diffusing and reflecting member 67 in contact with the side surfaces 57 and 63, and the reflected light returns to the light diffusing member 52 and the wavelength converting member 60 side, respectively. As a result, light leakage to the light diffusing and reflecting member 67 is blocked and almost no light enters the light diffusing and reflecting member 67 (see FIG. 4).

  Therefore, the emitted light of the semiconductor light emitting device is emitted only from the wavelength conversion member 60 and is not emitted from the periphery of the wavelength conversion member 60, so that the emitted light having high luminance and uniform luminance distribution and chromaticity distribution can be obtained. it can.

  Next, structural features of the semiconductor light emitting device will be described.

  When the light diffusing member 52 constituting the light guide 50 is provided with a convex portion 53 and the light guide 50 is bonded and fixed to the bottom 41 of the fourth holder 40 with an adhesive 65, the convex portion 53 is connected to the fourth light guide 50. The light guide 50 can be easily and accurately aligned with respect to the bottom 41 of the fourth holder 40 by fitting into the through hole 42 of the bottom 41 of the holder 40.

  As a result, in the mounting device for mounting the light guide 50 on the fourth holder 40, a complicated alignment mechanism is not required, and good workability can be ensured by an inexpensive device. This contributes to a reduction in manufacturing cost.

  Further, when the light guide 50 is mounted on the bottom 41 of the fourth holder 40, the adhesive 65 is crushed and pressed by the pressure movement of the light guide 50 toward the bottom 41 of the fourth holder 40. Although it spreads along the flat surface portion 54 of the diffusing member 52, the spread toward the convex portion 53 side is blocked by the rising portion of the convex portion 53 and does not spread further on the surface of the convex portion 53.

  For this reason, the adhesive 65 is not positioned on the optical path of the laser light, and the optical path is not disturbed or blocked to make the laser light intensity distribution uneven. The incident light does not have luminance unevenness and chromaticity unevenness.

  At the same time, since the adhesive 65 receives the laser light and becomes black, the incident efficiency of the laser light that is emitted from the semiconductor laser 1 and incident on the wavelength conversion member 60 from the light diffusion member 52 is reduced, and the semiconductor light emitting device emits light. There is no problem of lowering the emission efficiency of the emitted light.

  In the case of a conventional light diffusing member in which the surface of the light diffusing member that constitutes the light guide is mounted on the bottom of the fourth holder via an adhesive, the entire surface is a flat surface. There is a possibility that the light guide is mounted at a position shifted from a predetermined position due to a position shift when the light guide is mounted on the bottom of the fourth holder. In this case, as shown in FIG. 7 (an explanatory diagram relating to the positional deviation of the light guide), the light diffusing member 152 is irradiated with light emitted from the semiconductor laser, passing through the through-hole 142 in the bottom portion 141 of the fourth holder 140. The laser beam (L10) thus applied is irradiated to the light diffusing member 152 at a position shifted from the center. For this reason, the intensity distribution in the surface direction of the laser light incident on the light diffusing member 152 is not uniform, and the emitted light from the semiconductor light emitting device has color variations.

  Further, as shown in FIG. 8 (an explanatory diagram relating to the positional deviation of the light guide), the positional deviation of the light guide 150 with respect to the bottom 141 of the fourth holder 140 causes the adhesive 165 to move along with the fourth There is a risk that the laser beam (L10) in the through hole 142 in the bottom portion 141 of the holder 140 may protrude onto the optical path. In that case, the adhesive 165 receives the laser light (L10) and is blackened (part C), so that the incident efficiency of the laser light emitted from the semiconductor laser and incident on the light diffusion member 152 is reduced, and the semiconductor light emission is performed. The emission efficiency of the emitted light from the apparatus is reduced.

  Furthermore, when the through hole at the bottom of the fourth holder is exposed due to an extremely large displacement of the light guide, direct light from the semiconductor laser emitted from the exposed part of the through hole is directed to the viewer's eyes. There is a risk of impairing safety (eye safety) (this explanation is not shown).

  Therefore, in order to avoid the occurrence of the above-mentioned problem due to the positional deviation of the light guide with respect to the bottom of the fourth holder, the light guide alignment mechanism is included in the mounting process of the light guide with respect to the bottom of the fourth holder. Although it is conceivable to introduce a mounting apparatus having the above, the price of the apparatus becomes high and the manufacturing cost increases.

  On the other hand, the semiconductor light-emitting device of the present invention has a flat surface over the entire surface by providing a convex portion on the surface of the light guide that is attached to the bottom of the fourth holder via an adhesive. It solves the problems of conventional semiconductor light emitting devices.

  The cross-sectional shape in the direction perpendicular to the longitudinal direction of the through hole 42 in the bottom portion 41 of the fourth holder 40 and the shape of the bottom surface of the convex portion 53 of the light diffusion member 52 constituting the light guide 50 are the same shape. It is preferable that At the same time, it is preferable that the convex portion 53 has the same shape as the bottom surface in addition to the spherical shape in the present embodiment. Specifically, for example, as shown in FIG. 9 (an explanatory diagram related to the shape of the convex portion), the columnar convex portion 53 having the same dimensions of the upper surface 53a and the bottom surface 53b, or FIG. 10 (related to the shape of the convex portion). A frustum-shaped convex part 53 whose upper surface 53a is smaller in size than the bottom surface 53b as shown in FIG.

  In addition, the cross-sectional shape in the direction perpendicular to the longitudinal direction of the through hole 42 in the bottom 41 of the fourth holder 40 is not limited to the circular shape in the present embodiment, but the emitted light emitted from the semiconductor light emitting device. It is set as appropriate according to the required luminance distribution.

DESCRIPTION OF SYMBOLS 1 ... Semiconductor laser 2 ... Semiconductor laser element 3 ... Condensing lens 5 ... Semiconductor light-emitting device 10 ... 1st holder 11 ... Flange part 12 ... Upper surface 20 ... 2nd holder 30 ... 3rd holder 31 ... Laser optical path 40 ... 4th holder 41 ... Bottom part 42 ... Through-hole 43 ... Side wall part 44 ... Light diffusion reflection surface 45 ... Opening part 50 ... Light guide body 52 ... Light diffusion member 53 ... Convex part 53a ... Upper surface 53b ... Bottom surface 54 ... Plane part 55 Light incident surface 56 Light emitting surface 57 Side surface 60 Wavelength converting member 61 Light incident surface 62 Light emitting surface 63 Side surface 65 Adhesive 67 Light diffusing reflection member 70 Wavelength converting module

Claims (3)

A base having a through hole;
A light guide having a light diffusing member and a wavelength converting member disposed on the base so as to close the through-hole;
A semiconductor laser element arranged so that emitted light is emitted toward the through hole;
A light diffusing and reflecting member integrally covering the respective side surfaces of the light diffusing member and the wavelength converting member constituting the light guide;
With
In the light guide, the light diffusion member is located on the semiconductor laser side, the wavelength conversion member is located on the light emission side, and the light emission surface on the light emission side is a plane,
The light diffusing member has a spherical convex portion protruding to the semiconductor laser side at a central portion of the surface facing the semiconductor laser, and a flat portion around the convex portion,
In the state where the convex portion is fitted in the through hole, the flat surface portion is the upper surface of the base, and is fixed around the through hole,
A semiconductor light emitting device characterized in that the convex portion is irradiated with light emitted from the semiconductor laser element. The height of the convex portion, the semiconductor light emitting device according to claim 1, characterized in that it is less than the length of the through hole. The convex portion is a semiconductor light emitting device according to claim 1 or claim 2, characterized in that located at the center position in a cross section perpendicular to the longitudinal direction of the through hole.

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