JP6173659B2 - Electron beam image acquisition apparatus and electron beam image acquisition method - Google Patents

Description

  The present invention relates to an electron beam image acquisition apparatus and an electron beam image acquisition method for acquiring and inspecting a pattern image formed on a photomask or the like at high speed.

  In recent years, photomasks for semiconductors have been reduced year by year according to a semiconductor miniaturization roadmap, and feature sizes have become smaller and smaller. On the other hand, 193nm UV light exposure technology, such as immersion exposure and double exposure technology, has been adopted, so a large amount of optical correction technology called OPC has been introduced. A small sub-pattern of 1 has come to appear on the mask.

  A photomask is the basis of semiconductor device manufacturing, and its defect means a defect of a device that is immediately made using it. Therefore, guaranteeing the quality of the mask is very important for correctly performing semiconductor device manufacturing.

  In order to know whether or not the mask is accurately formed, it is necessary to inspect the size and shape of the sub-feature including OPC and the like together with the original feature. Since these are usually nm size more accurately than submicron, they are difficult to measure optically and are currently realized using electron beam technology, that is, electron microscope technology.

  In order to measure the nm feature size, measurement reproducibility of sub-nm or more is required. Sub-nm is as small as the size of an atom, and a very small amount of measurement is required.

  On the other hand, as the number of sub-features such as OPC increased, the number of measurement points of one mask increased compared to before OPC. Therefore, both higher reproducibility accuracy and ultra-high speed measurement have been required. In general, since there is a strong trade-off between the two, there has been no technology that improves both at the same time.

  Conventional CD measurement methods have been performed as follows.

  First, the mask and the electron beam irradiation position are moved using an XY table to move to a place including the measurement target. Next, as shown in FIG. 15, a field of view determined in advance by an integral multiple of microns called FOV is set. The field of view indicates an area where the electron beam is scanned. The size of the area is determined so as to completely include the measurement object. Image acquisition is performed with several focus values changed to obtain the best focus value. Thereafter, using the focus value, electron beam scanning is performed a plurality of times on the entire FOV to accumulate images, and a measurement target image is obtained. Next, a plurality of peak positions necessary for specifying the shape of the feature included in the image are detected by averaging or approximation processing, and the feature size is obtained by measuring the distance between the peaks.

Also, there is a technique for setting a measurement region of a pattern formed on a sample, blocking an electron beam with a beam blanker, irradiating only the measurement region with an electron beam, and acquiring an image of only the measurement region (patent) Reference 1).
Republished patent WO2008 / 111365

  According to the conventional method shown in FIG. 15, the electron beam scanning region includes a measurement object that is determined in advance by an apparatus such as an integer multiple of microns called FOV, due to the custom that has remained from the era of the conventional general-purpose electron microscope. Electron beam scanning has been performed over a wide area. The reason why such a scanning method has continued to be used is that an apparatus using a deflection coil system that easily ensures stabilization of electron beam scanning has been used. When the deflection coil is used, the electron beam is deflected using a magnetic field, so that it is not necessary to arrange a deflecting device in a vacuum, and the path of the electron beam can be kept simple to prevent contamination. It is known that when the path of the electron beam is contaminated with carbon or the like, electric charges accumulate therein and cause instabilities such as beam drift.

  Further, since the deflection coil has a large inductance, hysteresis, etc., it is necessary to always drive the coil in the same way in order to electrically stabilize the electron beam scanning. That is, in order to ensure stable operation, there is a drawback that only the same scanning (for example, the fixed FOV in FIG. 15) can be repeated.

  If the current applied to the coil is suddenly changed in order to change the FOV shown in FIG. 15, the reverse current by the coil, the back electromotive force, the hysteresis of the magnetic circuit, the delay of the movement of the magnetic spin in the magnetic circuit, etc. For this reason, unintended deflection occurs, and stability and reliability (reproducibility) as a deflecting device are lacking, making it unusable for a quantitative measuring device such as a length measuring device.

  Although there are still manufacturers that use such an old type deflection device for the length measuring device, improving the performance of these devices, particularly the throughput, has already reached its limit.

  Therefore, under the present circumstances, there is a strong demand for measuring a greater number of measurement points more efficiently and with improved throughput. In the conventional electron beam scanning method, there are many useless electron beam scans, and there is a problem that it is difficult to simultaneously improve the measurement reproducibility and the measurement speed.

  In the latter method disclosed in Patent Document 1, a pattern measurement area is set, and is blocked by a beam blanker, and only the measurement area is irradiated with an electron beam to acquire an image of the measurement area. There was a problem that the area had to be scanned with a deflecting device, and the throughput was poor.

  The present invention provides an electron beam image acquisition apparatus for acquiring an image for measuring a dimension of a pattern formed on a sample, in a maximum scanning region where the electron beam can be scanned at a maximum with respect to the pattern formed on the sample. A scanning device that scans only a specified area and a scanning that includes the opposing edge portions of the pattern measurement target for each pattern that is specified for image acquisition within the maximum scanning area that can be scanned with an electron beam. A scanning area setting means for setting each partial scanning area including each of the areas or opposing edge portions, and scanning only the scanning area or the partial scanning area of the pattern set by the scanning area setting means by controlling the scanning means. And an image acquisition means for acquiring a scanning area image or a partial scanning area image.

  At this time, the scanning device is configured by a one-stage or two-stage electrostatic deflector.

  In addition, the scanning device obtains a reference pattern image for each arbitrary region in the maximum scanning region that can be scanned at the maximum with an electron beam, and outputs a confirmation message that it is within a predetermined accuracy, or when it is not within a predetermined accuracy If it is not corrected or within a predetermined accuracy, a message to that effect is output.

  In addition, the setting of the scanning area or the partial scanning area is set on the design data in which the pattern formed on the sample is designed, and the set scanning area or partial scanning area on the set design data is previously set on the sample. In a state where the predetermined pattern is calibrated based on an image acquired by scanning with an electron beam, the stage is moved based on the calibrated value, and the sample mounted on the stage is moved to a predetermined location. The scanning area image or the partial scanning area image is acquired by the image acquisition means.

  In addition, when a pattern on the design data corresponding to the pattern formed on the sample is displayed on the screen and an image acquisition pattern is specified on the screen, the scanning region image or the specified pattern is displayed. A partial scanning area image is acquired.

  Further, based on the acquired scanning area image or partial scanning area image, the distance between opposing edges or the area surrounded by the edges is calculated.

  Further, focusing of the electron beam is performed using the edge portion of the image in the scanning region or the partial scanning region.

  In addition, regarding the number of times of accumulation of the same image of the scanning area image or partial scanning area image or the pixel density of the electron beam at the time of acquiring the image, the size of the pattern obtained from the image at the time of the accumulation number or the pixel density Reduce the number of accumulations when the reproducibility is better than the threshold, or lower the pixel density, or both lower or lower to improve the throughput, while increasing the number of accumulations when the reproducibility is lower than the threshold, or the pixel density The reproducibility is improved by increasing or increasing both of them.

  The present invention relates to a scanning region that includes an edge portion that faces an object to be measured for each pattern designated for image acquisition within a maximum scanning region where the electron beam can be scanned at maximum for the pattern formed on the sample. Alternatively, the measurement on the sample is performed by setting each partial scanning area including each of the opposing edge portions and scanning only the set scanning area or partial scanning area to obtain a scanning area image or partial scanning area image. It is possible to acquire the minimum necessary image including the edge portion of the target pattern and measure the length, to ensure the reproducibility of the length measurement, and to shorten the image acquisition time and improve the throughput.

  (1) In the conventional CDSEM, since the measurement position is limited by the FOV fixed by the CDSEM hardware, an arbitrary electron beam irradiation area could not be determined, but in the present invention it can be freely set. Conventionally, since the size of the pixel is linked to the FOV, the entire visual field range is scanned with the same resolution. For this reason, conventionally, for example, when it is desired to perform electron beam scanning with a resolution of 0.3 nm, it is necessary to specify 10000 pixels × 10000 pixels in an FOV of 3 microns, and it is necessary to acquire an image of 100 million pixels as a whole. It took a lot of time and was not practical.

  In the present invention, since the electron beam scanning range and the pixel size of the measurement location can be freely determined, the electron beam scanning can be performed in a very short time. Therefore, for example, if the feature size (pattern) is 800 nm and the length is 200 nm, for example, an area of about 100 nm × 220 nm can be obtained by scanning an electron beam, so that sufficient information can be obtained for measurement. That is, it is sufficient to scan about 2 million pixels. When the pixel clock is constant, the image acquisition time can be shortened by 50 times compared to the conventional method.

  (2) Further, according to the present invention, the electron beam scanning range can be determined regardless of the width of the feature (pattern). For example, if the pattern on the photomask can be etched very well and the edge of the pattern can be represented by an image in the range of about 10 nm, the width can be measured by collecting information in that range. For example, when a pixel size of 0.3 nm is used, it is only necessary to scan 30 pixels in the horizontal direction, and this value is constant even if the width of the feature changes. Therefore, in the present invention, the time required for one measurement can be further shortened. For example, if 30 pixels are taken in the horizontal direction and 200 pixels are taken in the vertical direction, it is sufficient to scan a total area of 12000 pixels, and the speed is further improved by about 100 times compared to the previous method.

  (3) Furthermore, the present invention increases or decreases the number of times of image accumulation and the pixel density, and the number of times the scanning region (scanning region, partial scanning region) is scanned so that the measured reproducibility matches the target reproducibility. By dynamically setting the pixel density of the electron beam, an image can be acquired in a short time while guaranteeing reproducibility, and the length measurement throughput can be improved.

  The present invention relates to a scanning region that includes an edge portion that faces an object to be measured for each pattern designated for image acquisition within a maximum scanning region where the electron beam can be scanned at maximum for the pattern formed on the sample. Alternatively, each partial scanning area including each of the opposing edge portions is set, and only the set scanning area or partial scanning area is scanned to obtain a scanning area image or partial scanning area image. The minimum necessary image including the edge part of the pattern was acquired and measured, and the reproducibility of length measurement was secured and the image acquisition time was shortened to improve the throughput.

  FIG. 1 shows a system configuration diagram of the present invention.

  In FIG. 1, an electron gun 1 generates and reduces an electron beam, and includes a known electron source (a heated thermoelectron source, a cold cathode with a sharp tip), an acceleration electrode, and the like. Is.

  The aperture 2 is a circular aperture that allows the electron beam at the central portion (within a predetermined solid angle) of the electron beam emitted from the electron gun 1 to pass therethrough and blocks the others. It can be switched to one with a diameter. The illustrated aperture 2 is disposed on the upper side of CL3. However, the present invention is not limited to this, and the aperture 2 may be disposed on the main surface (lens center) of CL3 or the lower side.

  The CL (condenser lens) 3 is a known lens that converges the electron beam emitted from the electron gun 1 and passed through the central portion of the aperture 2. CL3 shown in the figure is schematically shown, and is actually composed of a magnetic lens or an electrostatic lens.

  DEF (1) 4 and DEF (2) 5 represent two-stage deflectors, each of which is an electrostatic deflector having opposed electrodes, and is flattened while irradiating a thinly focused electron beam 11 onto the sample 8. Scanning (scanning in the X direction and the Y direction) is performed. Note that a two-stage magnetic deflector having a particularly small hysteresis may be used.

  The MCP 6 represents an example of a secondary electron detector, and detects a secondary electron emitted when an electron beam is scanned on a plane while irradiating the sample 8, and applies a positive voltage to the front surface. It is a thing.

  The objective lens 7 is for narrowly irradiating the electron beam 11 onto the sample 8 and is usually a magnetic field type objective lens.

  The sample 8 is a sample (for example, a mask) fixed on the stage 9.

  The stage 9 fixes the sample 8 and moves it to a predetermined location while measuring the coordinate positions in the X direction and the Y direction precisely by the length measuring device 27.

  The electron beam 11 is a primary electron beam emitted from the electron gun 1.

  The secondary electron beam 12 is a secondary electron emitted when the electron beam 11 is narrowed down and irradiated on the sample 8 while performing a plane scan. The secondary electrons 12 emitted from the sample 8 travel toward the MCP 6 to which a positive voltage is applied while spiraling on the axis by the magnetic field of the objective lens 7, collide with the detection surface of the MCP 6 and are amplified. A secondary electron image is generated.

  The high-voltage power supply 21 applies a positive high voltage to the electron gun 1 or supplies a heating voltage to the cathode in accordance with an instruction from the PC 31.

  The CL power source 22 supplies a predetermined current to the CL 3 in accordance with an instruction from the PC 31.

  The deflection power source 23 applies a predetermined deflection voltage to the DEF (1) 4 and DEF (2) 5 in accordance with an instruction from the PC 31.

  The secondary electron detector 24 sends a secondary electron signal (secondary electron image) to the PC 31 by applying a predetermined voltage to the MCP 6 or further amplifying the signal amplified by the MCP 6.

  The objective power supply 25 supplies a predetermined current to the objective lens 7 in accordance with an instruction from the PC 31.

  The stage control power supply 26 supplies a predetermined control power to a motor that drives the stage 9 to move the sample 8 to a predetermined location.

  The length measuring device 27 is a laser interferometer or the like that accurately measures the position of the stage 9 or the sample 8.

  The PC 31 is a known personal computer that performs various controls and processes by a program. Here, the scanning area setting unit 32, the scanning method designating unit 33, the global alignment unit 34, the image acquisition unit 35, the length measuring unit 36, the reliability It is comprised from the determination means 37, DB41, etc.

  The scanning area setting unit 32 sets a scanning area (scanning area, partial scanning area) of a pattern on the sample 8 (which will be described later with reference to FIG. 2 and the like).

  The scanning method designating unit 33 designates a scanning method for scanning the scanning area of the pattern on the sample 8 (which will be described later with reference to FIG. 2 and the like).

  The global alignment unit 34 generates a coordinate conversion formula between the pattern on the sample 8 and the pattern on the design data (described later with reference to FIG. 2 and the like).

  The image acquisition means 35 acquires an image (scanning region image, partial scanning region image) by scanning the scanning region (scanning region, partial scanning region) of the pattern on the sample 8 with a finely focused electron beam ( This will be described later with reference to FIG.

  The length measuring means 36 extracts the edge portion from the image (scanning area image, partial scanning area image) acquired by the image acquisition means 35 and measures the pattern (to be described later with reference to FIG. 2 and the like). .

  The reliability determination means 37 is for determining the reliability of the measured value of the pattern by extracting the edge portion from the acquired image (scanning area image, partial scanning area image) (to be described later with reference to FIG. 14). ).

  The DB 41 stores various data so that it can be easily searched. Here, CAD data, result data, reliability data, and the like are stored.

  Next, the operation of the configuration of FIG. 1 will be described in detail according to the order of the flowchart of FIG.

  FIG. 2 shows a flowchart for explaining the operation of the present invention.

  In FIG. 2, CAD data (GDSII, VSB, OASIS, etc.) is read in S1 (referred to as step S1, hereinafter the same). This reads design data of a pattern to be acquired. As described on the right side, the design data includes the coordinates of the start point and end point of the pattern (X1, Y1, X2, Y2) and the like.

  In S2, image information is developed at the designated position. This is to develop the image of the position of the pattern designated as the one to be measured among the patterns on the sample 8 (mask) fixed on the stage 9 in FIG. 1 on the CAD data read in S1 into displayable image information. To do.

  In S3, a range in which one electron beam scanning is possible is displayed on the screen. In the image information that can be displayed in S2, the image in the range that can be scanned once is displayed on the screen on the display, for example, as shown in FIG.

In S4, settings such as a scanning region, a scanning method, a pixel size, a scanning resolution, and the number of accumulations are performed. This is because, for example, the scanning area (scanning area, partial scanning area) is displayed on the screen displayed in S3 and scanned outside the figure, as shown in the image of the range in which one electron beam scanning is possible in FIG. A method (see FIGS. 9 and 10), a pixel size (see FIG. 14), a scanning resolution, the number of accumulations (see FIG. 14), and the like are set. Here, as the scanning area, as described on the right side, (starting point coordinates, end point coordinates) of the scanning area,
・ Scanning area (X1, Y1, X2, Y2)
Set.

  In S5, the scanning area is extracted. In this step, information on the scanning area is extracted from the information set in S4.

  In S6, the coordinates of the scanning start start point and end point are extracted.

  In step S7, global alignment is performed. This calculates the relationship between the position coordinates of the CAD data and the position coordinates of the mask, and when the coordinates on the CAD data are designated, the stage 9 is automatically controlled to designate the sample (mask) 8 on the CAD data. It is possible to move to the coordinates (coordinates irradiated by the electron beam).

  S8 moves to the measurement position. In this process, after global alignment is performed in S7, the stage 9 is moved to the measurement position (scanning region) designated on the CAD data, and the sample (mask) 8 is positioned.

  In S9, the scan start voltage and end voltage are calculated. In this state, the stage 9 is positioned at the measurement position (scan area) in S8, and the scan start voltage and end voltage corresponding to the coordinates of the scan start point and end point of the scan area extracted in S6 are calculated (see FIG. 9, see FIG.

  In S10, a voltage value is set in the DAC. This is because the PC 31 sets a scan start voltage and a scan end voltage value to a DAC (digital / analog converter) (not shown) that supplies a deflection voltage to the deflection power supply 23, and moves from the scan start voltage value to the scan end voltage value. A voltage changing at a constant speed is set to be applied to DEF (1) 4 and DEF (2) 5 via the deflection power supply 23.

  In step S11, the electron beam is scanned to acquire a secondary electron signal. This is because a voltage that changes at a constant speed from the scan start voltage set in S10 to the scan end voltage is applied to DEF (1) 4, DEF (2) 5, and the electron beam is scanned on the sample 8 in the scan region (scanning). The secondary electrons 12 generated at that time are acquired by the PC 31 via the MCP 6 and the secondary electron detector 24, and are stored (accumulated) in a memory (not shown). .

  In S12, the correspondence calculation between the scanning position coordinates and the signal intensity is performed.

  In step S13, edge extraction is performed.

  In S14, the length and the like are calculated. In S12 to S14, based on the secondary electron image of the scanning region (scanning region, partial scanning region) stored in the memory in S11, the edge portion of the pattern is extracted from the relationship between the scanning position coordinates and the signal intensity, Calculate the length, etc. based on the extracted edge part (for example, calculate the maximum part of the opposing edges (or the average of the maximum and minimum, the part that is smaller than the maximum by a predetermined amount), and calculate the distance between the edges as a dimension. The length of the pattern is calculated by a known method such as

  S15 outputs the result.

  As described above, the scan area (scan area, partial scan area) including the edge portion of the designated pattern is set by reading the CAD data, and the CAD data and the pattern on the sample (mask) 8 fixed to the stage 9 are set. The coordinate conversion formula is calculated by global alignment, the sample (mask) 8 is positioned based on this, and the scanning area is scanned with the electron beam to obtain a scanning area image (scanning area image, partial scanning area image). Then, it can be stored in the memory, and the dimension of the pattern can be measured based on these. At this time, for the pattern designated on the CAD data, in order to set the minimum necessary scanning area (scanning area, partial scanning area) corresponding to the size of the pattern, etc., and to detect the edge portion with the electron beam By scanning the minimum necessary scanning area with an electron beam and acquiring an image, it is possible to improve the throughput by shortening the image acquisition time while ensuring the reproducibility of length measurement. Details will be sequentially described below.

  FIG. 3 is a flowchart for explaining the operation of the present invention (global alignment).

  In FIG. 3, in S21, a coordinate conversion formula between the mask and CAD data is obtained by global alignment. As shown in FIG. 4 to be described later, an image of three points of global alignment (predetermined marks formed at the position of global alignment) formed in advance on a mask (sample) 8 is acquired and Calculate the position (coordinates) of. Then, a coordinate conversion expression representing the relationship between the calculated three global alignment positions (coordinates) on the mask and the three global alignment positions (coordinates) on the CAD data is obtained. Thereafter, the coordinates on the CAD data are converted into coordinates on the mask by the coordinate conversion formula, and the stage 9 in FIG. 1 is precisely controlled while measuring with the laser interferometer (length measuring device 27).

  In S22, after a certain time elapses, the above coordinate conversion formula is obtained. This is because both coordinate conversion expressions obtained from the global alignment positions of the three points on the mask and the three global alignment positions on the CAD data in S21 again after a certain period of time. Ask for.

  In step S23, it is determined whether the coordinates are shifted as a whole. In the case of YES, since it has been found that the global alignment position on the mask has shifted to the whole with respect to the three global alignment positions on the CAD data, DEF (1) 4 in FIG. , DEF (2) 5 electrode is judged to be contaminated on one side, that is, it turned out that one of the opposing electrodes of DEF (1) 4, DEF (2) 5 was contaminated and charged, and an unnecessary deflection component was generated. Therefore, an error message to that effect (electrode one side contamination) is displayed in S27. If NO, the process proceeds to S25.

  In S25, it is determined whether the width is changed (enlargement / reduction). In the case of YES, it is found that the global alignment position arrangement on the mask is expanded or reduced with respect to the arrangement of the three global alignment positions on the CAD data. DEF (1) 4, DEF (2) 5 electrodes are judged to be contaminated on both sides, that is, both sides of opposite electrodes of DEF (1) 4, DEF (2) 5 are contaminated and charged to unnecessarily expand or contract. Since it is determined that a component has occurred, an error message to that effect (contamination on both sides of the electrode) is displayed in S27. If NO, the process ends.

  In S28, after displaying an error message in S27, a recovery process is performed. Here, in S29, the electrodes are cleaned with ozone and plasma, that is, the surfaces of the electrodes of DEF (1) 4 and DEF (2) 5 in FIG. 1 are irradiated with ozone and plasma to remove contamination. And it ends.

  As described above, the positional relationship between the global alignment on the mask and the global alignment on the CAD data is obtained every predetermined time, it is determined whether the arrangement of the global alignment on the mask is shifted or expanded, and the shift or expansion is performed. If it is found that the electrode is contaminated, it is automatically determined as contamination of the electrodes (electrodes of DEF (1) 4 and DEF (2) 5 in FIG. 1), and ozone and plasma are automatically irradiated to remove the contamination. Automatic recovery is possible.

  FIG. 4 shows an explanatory diagram (part 2) of the present invention. FIG. 4 shows an example in which three global alignments on the mask are provided. The global alignment is not limited to three points, but may be two points, four points, five points, and the like. Here, the dimension of the mask is, for example, the size of 10 cm × 10 cm shown in the figure, and CAD data in which a predetermined dimension and a predetermined pattern are formed in advance at predetermined positions on three sides (or four sides) of the four sides. Since data of the same size and pattern is also formed at the same place, it is possible to determine the shift of the image on the mask and the enlargement / reduction by comparing the arrangement and enlargement / reduction of both.

  FIG. 5 shows an explanatory diagram (part 2) of the present invention. FIG. 5 schematically shows an example of a region (maximum scanning region) in which the electron beam can be scanned once in the mask of FIG.

  In FIG. 5, a measurement target pattern indicates a measurement target pattern (pattern on a mask) specified by the user (specified on CAD data).

  Scanning area designation (1) is performed when both the sides of the edge of the measurement target pattern are centered around the designated position when the position or coordinates of x are designated (designated on CAD data) by the user. A predetermined rectangle including the image is automatically set as the scanning area (1).

  The scanning area designation (2) includes each edge portion of the measurement target pattern centered on the designated position when the position or coordinates of x are designated (designated on CAD data) by the user. Each of the predetermined rectangles is automatically set as a scanning area (2).

  It should be noted that information other than the scanning area, for example, pattern measurement direction (vertical direction, horizontal direction, etc.), scanning method (see FIG. 9), pixel size (see FIG. 14), scanning resolution, number of accumulations, etc. are measured in advance. Set as information or set a default value.

  Also, the scanning area including the edge portion is provided outside and inside by a predetermined pixel (value determined in advance by experiment) from the maximum portion of the edge, and is automatically set to an area where merging (the margin value determined in experiment) is taken. That's fine.

  As described above, in accordance with the pattern size, shape, and the like, the scanning area (1) including the opposing edge portions of the measurement target pattern and the respective scanning areas (2) including the respective edge portions are automatically set. By setting the scanning areas (1) and (2) including one or two opposing edge portions necessary for measurement depending on the pattern size and shape, the minimum necessary for edge extraction is set. By setting the scanning area, it is possible to reduce the scanning time to the minimum necessary and improve the throughput.

  FIG. 6 shows an example of setting data for the measurement conditions of the scanning region according to the present invention. Here, the following information shown in the figure is set as the design data.

・ Scanning area:
・ Starting coordinates:
・ End coordinates:
Scanning resolution (X):
Scanning resolution (Y):
・ Number of accumulation:
・ Other:
Here, the scanning area is an index representing the scanning area. The start coordinates and end coordinates are start coordinates (upper left coordinates of the rectangle) and end coordinates (lower right coordinates of the rectangle) representing the rectangular scanning region. The scanning resolution (X) and the scanning resolution (Y) are resolutions (intervals) in the X direction and the Y direction when the electron beam scans the scanning region. The number of accumulations is the number of times an image (scanned image, partial scanned image) is acquired and accumulated in the memory.

  FIG. 7 shows an operation explanatory diagram (measurement of linearity) of the present invention.

  FIG. 7A shows a flowchart.

  In FIG. 7A, S31 moves to the measurement position on the stage.

  In S32, the length is measured. These S31 and S32 are moved to the position of the specific pattern on the mask (sample) 8 fixed on the stage 9 in FIG. Measure length.

  In S33, the measurement is performed by moving to the next measurement point. Move to the next measurement point and measure the dimension of the pattern as in S32.

  In S34, it is determined whether the end. If YES, the process proceeds to S35. If NO, return to S31 and repeat.

  S35 evaluates.

  In S36, a correction count is calculated.

  S37 calculates | requires linearity. These S35 to S37 are the measurement data 1 of the measurement point 1 of the pattern measured in S32 and S33, the measurement data 2 of the measurement point 2, ... the measurement data N of the measurement point N in FIG. Plot as shown to calculate the correction factor and determine linearity.

  FIG. 7B shows an example of linearity.

  (B-1) of FIG. 7 shows an example of a graph. In the illustrated graph, the coordinate X or Y of each point measured in FIG. 7A is plotted on the horizontal axis, and the deviation Δd from the reference value D of the measurement data at that time is plotted on the vertical axis and connected by a line. It is a thing (a graph showing linearity).

  FIG. 7B-2 shows an example of the correction coefficient. The correction coefficient is obtained by the following equation (1) shown in the figure.

Correction coefficient Kx or y = ± Δdx or y / Dx or y (Equation 1)
As described above, the measurement data 1 of the measurement point 1 on the mask, the measurement data 2 of the next measurement point 2,..., The measurement data N of the measurement point N are measured and compared with the measurement data on the CAD data. The error is calculated, and as shown in the graph of (b-1) in FIG. 7, the error Δd from the reference value D is plotted and connected by a line to generate the graph, and at each position on the mask The linearity (error) can be calculated. When the linearity exceeds the allowable range, it is determined that the electrodes (DEF (1) 4, DEF (2) 5 in FIG. 1) are contaminated and automatically cleaned (removed by irradiating with ozone and plasma). It becomes possible to restore (linearity is automatically restored to an allowable range).

  FIG. 8 is an operation explanatory diagram (automatic focusing) of the present invention.

  FIG. 8A shows a flowchart.

  In FIG. 8A, S41 sets the value of the focus lens to an initial value.

  In S42, the edge portion is irradiated with the electron beam.

  S43 acquires a secondary electron signal.

  In S44, the focus value is changed.

  S45 determines whether the maximum value. If YES, the process proceeds to S46. In the case of NO, S42 and subsequent steps are repeated.

  1 is set to the initial value, and the edge portion of the predetermined pattern on the mask (sample) 8 fixed to the stage 9 is irradiated with the electron beam. Scanning, acquiring secondary electron signals emitted at that time, and storing them in the memory are repeated in order from the initial value of the focus value to the maximum value, and the focus lens value is sequentially repeated from the initial value to the maximum value. It is possible to store the secondary electron signal of the edge portion when changing to a predetermined width to the memory.

  In S46, a profile is extracted.

  In S47, the focal point is the one having the maximum peak. In S46 and S47, the profile of the secondary electron signal stored in the memory in S41 to S45 is sequentially extracted, and the value of the focus lens having the maximum peak is determined as the in-focus value.

  As described above, the secondary electron signal at the edge portion of an arbitrary pattern on the mask is stored by changing the value of the focus lens, and the maximum focus lens value at the edge portion of the profile of the stored secondary electron signal is focused. By automatic determination, the image can be acquired at high speed only with the secondary electron signal at the edge portion of the pattern, and automatic focusing can be performed.

  FIG. 8B shows an operation explanatory diagram.

  (B-1) to (b-3) in FIG. 8 show examples of wide patterns.

  (B-1) of FIG. 8 shows a voltage waveform applied to the electrodes of DEF (1) 4 and DEF (2) 5 of FIG. The horizontal axis represents time, and the vertical axis represents voltage.

  FIG. 8B-2 shows an example of a pattern having a large width. Even in this wide pattern, the scanning region (1) only needs to detect the edge portion of the pattern, so it may be the same as the scanning region (1) in the case of the narrow pattern of (b-5) in FIG. The acquisition time of the secondary electron signal can be greatly shortened.

  FIG. 8B-3 shows a case where the value of the focus lens is sequentially changed from the initial value 1 to the maximum value 5 when the scanning region (1) of FIG. 8B-2 is scanned with the electron beam. 2 schematically shows the profile of the secondary electron signal acquired in (1). The maximum peak in this profile is determined as the in-focus point (determined as the best focus).

  (B-4) to (b-6) in FIG. 8 show examples of patterns having a small width.

  (B-4) in FIG. 8 shows a voltage waveform applied to the electrodes of DEF (1) 4 and DEF (2) 5 in FIG. The horizontal axis represents time, and the vertical axis represents voltage.

  (B-5) of FIG. 8 shows an example of a pattern having a small width. The pattern having the small width is the same as the scanning area (1) in the case of the wide pattern in FIG. 8B-2 because the scanning area (1) only needs to detect the edge portion of the pattern. .

  (B-6) in FIG. 8 shows the case where the value of the focus lens is sequentially changed from the initial value 1 to the maximum value 5 when the scanning region (1) in FIG. 8 (b-5) is scanned with the electron beam. 2 schematically shows the profile of the secondary electron signal acquired in (1). The maximum peak in this profile is determined as the in-focus point (determined as the best focus).

  FIG. 9 is an explanatory diagram of the present invention.

  FIG. 9A shows an example of a scanning method in a case where a scanning region including edge portions facing each other in a pattern is set.

  (A-1) to (a-2) in FIG. 9 schematically show an example where the distance between the opposing edge portions of the pattern is large, and (a-3) to (a-4) in FIG. ) Schematically shows an example in which the distance between the opposing edge portions of the pattern is small.

  (A-1) in FIG. 9 shows an example of a pattern to be measured, a scanning region, and a scanning voltage (X, Y). The image acquisition procedure will be described in detail below.

  (1) As shown in (a-1) of FIG. 9, when the measurement target pattern 51 is designated, the measurement of the pattern 51 is designated as a scanning region 52 for scanning the designated pattern 51. The scanning region 52 including the edge portions facing in the direction is set as shown below.

Scan area 52:
-Upper left coordinates: (X1, Y1)
・ Lower left coordinates: (X2, Y2)
(2) As the voltage applied to the electrodes of DEF (1) 4 and DEF (2) 5 in FIG. 1 so as to scan the scanning region 52 set in (1),
X direction: voltage EX1 for deflecting the electron beam with the starting point being X1
Voltage EX2 that deflects the electron beam to the end point X2.
Y direction: voltage EY1 for deflecting the electron beam from the starting point to Y1
Voltage EY2 for deflecting the electron beam to the end point Y2.
Set.

  (3) Based on the voltage set in (2), the electron beam is scanned one time from the start point in the X direction to the end point in synchronization with the clock.

  (4) Next, the electron beam is scanned (deflected) in the Y direction from the start point to the end point by a predetermined amount (by a predetermined step by an amount corresponding to one clock). Then, similarly to (3), based on the voltage set in (2), the electron beam is scanned once in synchronization with the clock from the start point in the X direction to the end point.

  (5) Similarly, repeat (4) until the end point in the Y direction.

  According to the above (1) to (5), the scanning region 52 of (a-1) in FIG. 9 is scanned from the top to the bottom including the opposing edge portions of the pattern 51 in the lateral direction. , And the secondary electron signal at that time is stored in the memory in association with the coordinates of the scanning signal, so that the portion set in the scanning region 52 for the pattern 51 (the portion including the opposing edge portion of the pattern) It becomes possible to acquire the secondary electron image.

  Similarly, when the width of the pattern 53 shown in (a-3) to (a-4) of FIG. 9 is small, the narrow scanning region 54 including the opposing edge portions of the pattern having the small width is scanned and It is possible to store a secondary electron signal in a memory and obtain a secondary electron image of a portion (a portion including an edge portion opposite to the pattern) set in a narrow scanning region 54 for a narrow pattern 53. Become.

  FIG. 9A-2 also shows an example of the profile of the secondary electron signal detected when the scanning region 52 of FIG. 9A-1 is scanned once in the X direction with an electron beam. Peaks are detected at the edge portions.

  As described above, even when the widths in the measurement direction of the patterns 51 and 53 designated as the measurement target are large and small, the scanning area 52 having the minimum necessary width including the opposing edge portions of the pattern necessary for length measurement. , 54, and scanning the scanning areas 52, 54 having the minimum necessary width to acquire a secondary electron image, thereby dynamically setting the scanning area of the electron beam to the minimum necessary and at high speed. A secondary electron image can be acquired and the throughput can be improved.

  FIG. 9B schematically shows an example in which the scanning region 52 is set for each of the opposing edge portions of the pattern. The image acquisition procedure will be described in detail below.

  (1) As shown in (b-1) of FIG. 9, when a measurement target pattern 51 is designated, the measurement designation of the pattern 51 is made as a partial scanning region 52 ′ for scanning the designated pattern 51. As shown below, two partial scanning regions 52 ′ each independently including opposing edge portions in the specified direction are set here.

-Left partial scanning area 52 ':
-Upper left coordinates: (X1, Y1)
・ Lower left coordinates: (X2, Y2)
Right partial scan area 52 ′:
-Upper left coordinates: (X3, Y3)
-Lower left coordinates: (X4, Y4)
(2) As voltages applied to the electrodes of DEF (1) 4 and DEF (2) 5 in FIG. 1 so as to scan the two partial scanning regions 52 ′ set in (1),
-Left partial scanning area 52 ':
X direction: voltage EX1 for deflecting the electron beam with the starting point being X1
Voltage EX2 that deflects the electron beam to the end point X2.
Y direction: voltage EY1 for deflecting the electron beam from the starting point to Y1
Voltage EY2 for deflecting the electron beam to the end point Y2.
Right partial scan area 52 ′:
X direction: voltage EX3 for deflecting the electron beam from the starting point to X3
Voltage EX4 that deflects the electron beam to the end point X4
Y direction: Voltage EY3 for deflecting the electron beam from the starting point to Y3
Voltage EY4 for deflecting the electron beam to the end point Y4
Set each.

  (3) Based on the voltage set in (2), the left partial scanning region 52 'is scanned one time in synchronization with the clock from the start point to the end point in the X direction.

  (4) Next, the electron beam is scanned (deflected) in the Y direction from the start point to the end point by a predetermined amount (by a predetermined step by an amount corresponding to one clock). Then, similarly to (3), based on the voltage set in (2), the electron beam is scanned once in synchronization with the clock from the start point in the X direction to the end point.

  (5) Similarly, repeat (4) until the end point in the Y direction.

  (6) Next, (3) to (5) are repeated for the right partial scanning region 52 '.

  From the above (1) to (6), the scanning region 52 on the left side of (b-1) in FIG. 9 is scanned from the top to the bottom including the opposing edge portions of the pattern 51 in the horizontal direction. The secondary electron signal at that time is stored in the memory in association with the coordinates of the scanning signal, and similarly, the right side partial scanning region 52 ′ is also scanned and stored, whereby the pattern 51 Secondary electron images of the portions set in the partial scanning region 52 ′ (the portions including one edge portion facing the pattern) can be respectively acquired.

  Similarly, when the width of the pattern 53 shown in (b-3) to (b-4) of FIG. 9 is small, scanning is performed with respect to the partial scanning regions 54 ′ set for the opposing edge portions of the pattern with the small width. The secondary electron signal can be stored in the memory.

  FIG. 9B-2 shows an example of the profile of the secondary electron signal detected when the two partial scanning regions 52 ′ of FIG. 9B-1 are each scanned in the X direction with an electron beam. Indicates. Peaks are detected at the edge portions.

  As described above, even when the widths in the measurement direction of the patterns 51 and 53 designated as the measurement target are large and small, the two necessary minimum widths including only the opposing edge portions of the pattern necessary for the length measurement are included. By setting the partial scanning areas 52 ′ and 54 ′ and scanning the partial scanning areas 52 ′ and 54 ′ having the minimum necessary width to acquire a secondary electron image, the width in the pattern measurement direction can be increased or decreased. Even in such a case, it is possible to dynamically set the necessary minimum of substantially the same width, acquire a secondary electron image at high speed, and improve the throughput.

  FIG. 10 is an explanatory diagram of the present invention (continuation of FIG. 9).

  FIG. 10C shows an embodiment in which scanning is continued by jumping from the left partial scanning region to the right partial scanning region for the partial scanning regions 52 ′ and 54 ′. In FIG. 9B, the left partial scanning region 52 ′ and the right partial scanning region 52 ′ are scanned independently after scanning the next partial scanning region 52 ′. ) Is an example of scanning in the X direction so as to repeat scanning after scanning the left partial scanning region 52 'and then jumping to the right partial scanning region 52'. This makes it possible to acquire a secondary electron image at the same position in the horizontal direction (the position where the Y coordinate is the same in the horizontal direction).

  FIG. 11 is an explanatory diagram of a method for measuring the width from the partial scanning region image of the present invention. This is a method of measuring the width of the pattern from the partial scanning region images acquired by scanning the partial scanning regions 52 ′ and 54 ′ of FIG. 9B and FIG. Explain.

  In FIG. 11, S51 acquires a partial scanning area image.

  S52 schematically shows how the partial scanning region 52 'is scanned with an electron beam to obtain a partial scanning region image. This is because the two partial scanning regions 52 ′ each including the opposing edge portions of the pattern of FIG. 9B-1 described above are scanned in the X direction with an electron beam, and secondary electrons generated at that time are scanned. A mode that a signal is acquired is shown typically.

  In step S53, edge positions included in the partial scanning region image are extracted. For example, in the secondary electron signal profile shown in (b-2) of FIG. 9 described above acquired in S52, the edge position of the edge portion (for example, the position of the maximum peak of the edge portion or a predetermined value from the maximum peak). Only a small position).

  S54 calculates | requires the distance between the several obtained edges. Then, a plurality of sets of distances are obtained and averaged, and further a standard deviation is obtained. When the distance is equal to or smaller than a predetermined threshold, the average value is determined as the pattern size.

  As described above, the distance between the edges is obtained based on the edge position in the partial scanning region image, averaged, and further the standard deviation is obtained, and the pattern size is determined when the standard deviation is equal to or smaller than a predetermined threshold. It becomes possible.

  FIG. 12 shows an image acquisition example (part 1) of the present invention.

  FIG. 12A shows an image acquisition example when the pattern is circular. As a case where the pattern is circular, the pattern may be a contact hole.

  (A-1) of FIG. 12 shows an example of the scanning direction in which only the edge portions are scanned in the X direction and the Y direction, respectively, and two sets of secondary electron images are acquired.

  (A-2) in FIG. 12 shows an example of the scanning direction in which only the edge portion is scanned once in the 45 ° direction to acquire a set of secondary electron images.

  (A-3) in FIG. 12 shows the method of the present invention, in which only the edge portion is scanned from the direction of angle division toward the center of the circular pattern, or conversely, only the edge portion is scanned from the center to the outer direction. An example of a scanning method for acquiring a set of secondary electron images will be described.

  In any of the above scanning directions, only the edge portion of the circular pattern is scanned with the electron beam, so that the scanning time can be shortened and the throughput can be improved as compared with the conventional scanning method.

  FIG. 12B shows an example of the scanning direction in which a set of secondary electron images is acquired by scanning a plurality of times while changing the radius in the circular direction. As a result, it is possible to acquire a circular secondary electron signal profile including only the edge portion of the circular pattern while reducing the scanning time.

  FIG. 13 shows an image acquisition example (part 2) of the present invention.

  In FIG. 13, the pattern 1 formed on the mask has a large pattern width, and here, the scanning resolution is set to 2 nm.

  The pattern 2 formed on the mask has a small pattern width, and here, the scanning resolution is set to 0.3 nm.

  As described above, by setting the scanning resolution (corresponding to the allowable measurement error in the vertical direction) corresponding to the sizes of the patterns 1 and 2, the electron beam is emitted in the partial scanning regions 55 and 56 with the set scanning resolution. By scanning and detecting a secondary electron signal and storing it as a partial scanning region image, it becomes possible to acquire a partial scanning region image at high speed with an optimal scanning resolution corresponding to the size of the patterns 1 and 2.

  FIG. 14 shows an image acquisition example (part 3) according to the present invention.

  FIG. 14A schematically shows an example of device performance that can be guaranteed. Here, the horizontal axis indicates the type of measurement object due to differences in pattern size, shape, etc., and the vertical axis indicates the measurement reproducibility of each type of measurement object.

  (A-1) in FIG. 14 schematically shows an example of apparatus performance that can be guaranteed by a conventional fixed measurement method. In the conventional fixed measurement method, measurement is performed based on the number of times of acquisition and accumulation of fixed parameters without dynamically changing parameters corresponding to the size and shape of the pattern. Thus, the device performance that can be guaranteed varied.

  (A-2) in FIG. 14 schematically shows an example of the apparatus performance that can be guaranteed by the condition-specific optimization measurement method of the present invention. Since the condition-specific optimization measurement method of the present invention was measured by dynamically changing parameters corresponding to the size and shape of the pattern, the device performance that can be guaranteed as shown in the figure according to the size and shape of the pattern. There is a feature that it is constant for the type of measurement object and can guarantee stable reproducibility. Next, specific details will be described below.

  FIG. 14B shows an example of the condition-specific optimized measurement method (accumulation count).

  In FIG. 14B, the illustrated table is a table in which the following information is registered in association with each other, and is used for dynamically changing the number of accumulations as a parameter.

・ Measurement points:
・ Initial image storage count:
・ Measurement reproducibility:
・ Target reproducibility:
-Optimal image storage count:
Here, the measurement point is a measurement point that specifies a pattern to be measured. The initial image accumulation count is the number of times the scan area image (scan area image, partial scan area image) of the measurement point is accumulated. The measured reproducibility is measured reproducibility (for example, standard deviation 3σ). The target reproducibility is a target reproducibility (for example, standard deviation 3σ) of the pattern of the measurement point. The optimum number of times of image accumulation is the number of times (the number of times to acquire) the scanning area image when the measured reproducibility is the same as the target reproducibility.

  Next, the measurement method will be described.

  (1) The scanning area image is acquired for the pattern of the measurement points as many times as the initial image accumulation number set in the above table and accumulated in the memory, and the edge position is extracted based on each accumulated scanning area image. When an average value and a standard deviation 3σ (reproducibility) are obtained for the measured values corresponding to the calculated number of accumulations, it is as illustrated.

  (2) Next, as shown in the table of the number of initial image accumulations, the measured reproducibility was obtained, and therefore the measured reproducibility is larger (bad) or smaller (good) than the target reproducibility. A procedure for increasing / decreasing the number of times of accumulation will be described.

  When the measured reproducibility is larger (bad) than the target reproducibility: Here, since the measured reproducibility is 0.4 and larger (bad) than the target reproducibility 0.2, the reproducibility is small ( In order to increase the number of times of accumulation to an integral multiple of 4, for example, to accumulate the scanning region image, to obtain the reproducibility at that time (for example, standard deviation 3σ), and to obtain the number of times of accumulation equal to the target reproducibility. Here, since the number of times is 64, the optimum image accumulation number shown in the figure is set to 64, and thereafter, the pattern of the measurement point C (and the pattern having the same shape) is set to the optimum image accumulation number 64, thereby achieving the target. The reproducibility can be improved by matching the reproducibility.

  When the measured reproducibility is smaller (good) than the target reproducibility: Here, since the measured reproducibility is 0.1 and smaller than the target reproducibility 0.2 (good), the reproducibility is increased ( In order to improve the throughput by reducing the number of times of accumulation and reducing the number of times of accumulation, the number of times of accumulation is reduced, the scanning area image is accumulated, and the reproducibility at that time (for example, standard deviation 3σ) is obtained. The number of times is obtained. Here, the number of times is 4, so the optimum image accumulation number shown in the figure is set to 4, and thereafter, the optimum image accumulation number 4 is set for the pattern at the measurement point B (and the pattern having the same shape). As a result, the throughput can be improved in accordance with the target reproducibility.

  FIG. 14C shows an example of the condition-specific optimization measurement method (pixel density).

  In FIG. 14C, the illustrated table is a table in which the following information is registered in association with each other, and is used for dynamically changing the pixel density as a parameter.

・ Measurement points:
Initial pixel density / μm:
・ Measurement reproducibility:
・ Target reproducibility:
Optimal pixel density / μm:
Here, the measurement point is a measurement point that specifies a pattern to be measured. The initial pixel density / μm is the pixel density / μm of the electron beam that scans the scanning area (scanning area image, partial scanning area image) of the measurement point. The measured reproducibility is measured reproducibility (for example, standard deviation 3σ). The target reproducibility is a target reproducibility (for example, standard deviation 3σ) of the pattern of the measurement point. The optimum pixel density / μm is the pixel density / μm of the electron beam that scans the scanning area image when the measured reproducibility is the same as the target reproducibility.

  Next, the measurement method will be described.

  (1) The scanning area of the pattern of the measurement point is scanned with the electron beam having the initial pixel density / μm set in the above table, an image is acquired and stored in the memory, and each of the accumulated scanning area images is stored. The average value and standard deviation 3σ (reproducibility) of the measured values calculated by extracting the edge positions are as shown in the figure.

  (2) Next, as shown in the table in the drawing with the initial pixel density / μm, the measured reproducibility was obtained, and this measured reproducibility is larger (bad) or smaller (good) than the target reproducibility. A procedure for increasing or decreasing the pixel density / μm will be described.

  When the measured reproducibility is larger (bad) than the target reproducibility: Here, since the measured reproducibility is 0.4 and larger (bad) than the target reproducibility 0.2, the reproducibility is small ( In order to improve the pixel density / μm, for example, the pixel density / μm is sequentially increased from, for example, 512 to an integral multiple to accumulate the scanning area image, and the reproducibility (eg, standard deviation 3σ) at that time is obtained. / Μm is obtained. Here, since it is 2048, the optimum pixel density / μm shown in the figure is set to 2048. Thereafter, the optimum pixel density / μm 2048 for the pattern of the measurement point C (and the pattern having the same shape) is set as follows. By setting, it becomes possible to improve the reproducibility by matching with the target reproducibility.

  When the measured reproducibility is smaller (good) than the target reproducibility: Here, since the measured reproducibility is 0.1 and smaller than the target reproducibility 0.2 (good), the reproducibility is increased ( In order to reduce the pixel density / μm and improve the throughput, the pixel density / μm is reduced and the scanning area image is accumulated to obtain the reproducibility (for example, standard deviation 3σ) at that time. The pixel density / μm to be equal is obtained. Here, since it is 126, the optimum pixel density / μm shown in the figure is set to 126, and thereafter the optimum pixel for the pattern at the measurement point B (and the pattern having the same shape). By setting the density / μm to 126, it becomes possible to improve the throughput in accordance with the target reproducibility.

It is a system configuration diagram of the present invention. It is an operation | movement explanatory flowchart of this invention. It is operation | movement description flowchart (global alignment) of this invention. It is explanatory drawing (the 1) of this invention. It is explanatory drawing (the 2) of this invention. It is an example of setting data of the measurement conditions of the scanning area of the present invention. It is operation | movement explanatory drawing (measurement of linearity) of this invention. It is operation | movement explanatory drawing (automatic focus adjustment) of this invention. It is explanatory drawing of this invention. It is explanatory drawing (continuation of FIG. 9) of this invention. It is explanatory drawing of the method of measuring a width | variety from the partial scanning area | region image of this invention. It is an image acquisition example (the 1) of this invention. It is an image acquisition example (the 2) of this invention. It is an image acquisition example (the 3) of this invention. This is a conventional electron beam scanning method.

1: Electron gun 2: Aperture 3: CL (condenser lens)
4: DEF (1)
5: DEF (2)
6: MCP
7: Objective lens 8: Sample 9: Stage 11: Electron beam 12: Secondary electron 21: High voltage power supply 22: CL power supply 23: Deflection power supply 24: Secondary electron detector 25: Objective power supply 26: Stage control power supply 27: Measurement Feature 31: PC (PC)
32: Scanning region setting means 33: Scanning method designating means 34: Global alignment means 35: Image acquisition means 36: Length measuring means 37: Reliability determination means 41: DB

Claims (9)

In an electron beam image acquisition apparatus for acquiring an image for measuring the dimension of a pattern formed on a sample,
A scanning unit that scans only a specified region in a maximum scanning region where the electron beam can be scanned at a maximum with respect to the pattern formed on the sample;
In the maximum scanning area that can be scanned with the electron beam, for each pattern that is designated for image acquisition, scanning that includes the opposite edge portions of the measurement target of each pattern, centered on the position designated on the design data Scanning region setting means for automatically setting each partial scanning region including each region or opposing edge portions as a scanning region or partial scanning region to be scanned;
Image acquisition means for acquiring only a scanning area image or a partial scanning area image by controlling the scanning means to scan only the scanning area or the partial scanning area of the pattern set by the scanning area setting means; An electron beam image acquisition apparatus characterized by that.    2. The electron beam image acquisition apparatus according to claim 1, wherein the scanning means is composed of a one-stage or two-stage electrostatic deflector.    The scanning means obtains a reference pattern image for each arbitrary area in the maximum scanning area that can be scanned with the electron beam, and outputs a confirmation message indicating that it is within a predetermined accuracy, or corrects if it is not within the predetermined accuracy. 3. The electron beam image acquisition apparatus according to claim 1, wherein a message to that effect is output when the accuracy is not within the predetermined accuracy.    The scan area or the partial scan area is set on design data that designs a pattern formed on the sample, and the set scan area or partial scan area on the set design data is previously set on the sample. The relationship between the position coordinates of the design data and the position coordinates of the mask is calculated based on the global alignment image that is the predetermined pattern obtained by scanning the predetermined pattern with an electron beam, and the stage is calculated based on the calculated relationship. The scanning area image or the partial scanning area image is acquired by the image acquisition means in a state where the sample mounted on the stage is moved to a predetermined location. 4. The electron beam image acquisition apparatus according to any one of 3 above.    When the pattern on the design data corresponding to the pattern formed on the sample is displayed on the screen, and the image acquisition pattern is specified on the screen, the scan area image or partial scan of the specified pattern 5. The electron beam image acquisition apparatus according to claim 1, wherein an area image is acquired.    6. The distance between opposing edges or the area surrounded by the edges is calculated based on the acquired scanning area image or partial scanning area image. Electron beam image acquisition device.    The electron beam image acquisition apparatus according to claim 1, wherein electron beam focusing is performed using an edge portion of an image in the scanning area or the partial scanning area.    The number of times of accumulation of images at the same location of the scanning area image or the partial scanning area image or the pixel density of the electron beam at the time of acquiring the image, the size of the pattern obtained from the image at the time of the accumulation number or the pixel density When the reproducibility of image quality is better than the threshold value, the number of accumulation is decreased, or the pixel density is decreased, or both are decreased or decreased to improve the throughput. 8. The electron beam image acquisition apparatus according to claim 1, wherein the reproducibility is improved by increasing the density or increasing or increasing both. In an electron beam image acquisition method for acquiring an image for measuring a dimension of a pattern formed on a sample,
A scanning unit that scans only a specified area in a maximum scanning area where the electron beam can be scanned at maximum with respect to the pattern formed on the sample,
In the maximum scanning area that can be scanned with the electron beam, for each pattern that is designated for image acquisition, scanning that includes the opposite edge portions of the measurement target of each pattern, centered on the position designated on the design data A scanning region setting step for automatically setting each partial scanning region including the region or the opposing edge portion as a scanning region or partial scanning region to be scanned;
An image acquisition step of acquiring only a scanning region image or a partial scanning region image by controlling the scanning unit to scan only the scanning region or the partial scanning region of the pattern set in the scanning region setting step. An electron beam image acquisition method characterized by the above.

Images