JP6152434B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device such as a large-scale integrated circuit, and more particularly to a semiconductor device manufactured using a wafer level CSP (Wafer-Level Chip Scale Packaging).

  In recent years, with the miniaturization of electronic devices such as portable information terminals and digital cameras, there is a strong demand for miniaturization of semiconductor devices mounted on electronic devices and high-density mounting on mounting substrates such as circuit boards and intermediate boards. A wafer level CSP (hereinafter referred to as “W-CSP”) is known as a technique for realizing high-density mounting. W-CSP is a technology that performs packaging in a wafer state without separating semiconductor chips from the wafer. In the W-CSP structure, an electrode pad formed on a semiconductor chip by a wafer process is connected to an electrode terminal for external connection (such as a solder ball or a solder coat layer) via a metal plating film wiring. The wiring process of the metal plating film is called a pad redistribution or rewiring process. In the W-CSP structure, the wiring density of the mounting substrate can be lowered by increasing the pitch of the electrode terminals, and high-density mounting can be realized by reducing the package size to the size of the semiconductor chip. As a prior art document regarding W-CSP, for example, Japanese Patent Application Laid-Open No. 2008-021849 (Patent Document 1) can be cited.

JP 2008-021849 A

  In a manufacturing process using W-CSP, a wafer inspection using a probe needle (probe) may be performed before the rewiring process. Specifically, after the wafer process, the quality of the semiconductor chip is determined by applying the tip of the probe needle to the exposed surface of the electrode pad of the semiconductor chip and measuring the electrical characteristics of the semiconductor chip. However, when a probe needle is applied to the electrode pad, a residue (for example, electrode pad shavings) remains on the electrode pad, and this residue causes a crack in the interlayer insulating film formed in the rewiring process. There's a problem. If a crack occurs in the interlayer insulating film, there is a risk that problems such as an electrical short circuit may occur.

  In view of the above, an object of the present invention is to provide a semiconductor device having good electrical characteristics even when a wafer inspection using a probe needle is performed.

A semiconductor device according to the present invention includes a semiconductor substrate, a semiconductor element formed on the first main surface of the semiconductor substrate, a first insulating film that covers the first main surface, and an electrical connection to the semiconductor element. An electrode which is connected and is formed on the first insulating film and has a first region on the surface and a second region surrounding the first region; and the first insulating film and the electrode And a second insulating film having an opening that covers and exposes the first region and the second region of the electrode, and the probe needle abuts against the upper surface of the electrode. Residue remaining on at least one of the upper surface and the second insulating film is formed directly on the electrode and is electrically connected to the first region of the electrode and corresponds to the opening. A conductive post whose top surface is connected to a conductor; And a third insulating film covering said second region side and the second insulating film and the electrode of the conductive posts, the residue is insulated the conductive posts and the third The distance between the second region of the electrode and the conductor corresponding to the second region embedded in at least one of the films is such that the conductor corresponding to the first region and the first region of the electrode It is characterized by being longer than the distance .

  According to the present invention, it is possible to prevent a defect from occurring in an interlayer insulating film even when a wafer inspection using a probe needle is performed. Therefore, a semiconductor device having good electrical characteristics is provided. Can do.

It is a figure which shows roughly the one part cross-section of the semiconductor device which is embodiment which concerns on this invention. (A) is a figure which shows an example of a wafer, (B) is a figure which shows the upper surface of a semiconductor device roughly. It is sectional drawing which shows schematically the manufacturing process (1st process) of the semiconductor device of this Embodiment. It is sectional drawing which shows schematically the manufacturing process (2nd process) of the semiconductor device of this Embodiment. It is sectional drawing which shows schematically the manufacturing process (3rd process) of the semiconductor device of this Embodiment. It is sectional drawing which shows schematically the manufacturing process (4th process) of the semiconductor device of this Embodiment. It is sectional drawing which shows roughly the manufacturing process (5th process) of the semiconductor device of this Embodiment. It is sectional drawing which shows schematically the manufacturing process (6th process) of the semiconductor device of this Embodiment. It is sectional drawing which shows schematically the manufacturing process (7th process) of the semiconductor device of this Embodiment. It is sectional drawing which shows schematically the manufacturing process (8th process) of the semiconductor device of this Embodiment. It is sectional drawing which shows schematically the manufacturing process (9th process) of the semiconductor device of this Embodiment. It is sectional drawing which shows schematically the manufacturing process (10th process) of the semiconductor device of this Embodiment. It is sectional drawing which shows schematically the manufacturing process (11th process) of the semiconductor device of this Embodiment. It is sectional drawing which shows schematically the manufacturing process (12th process) of the semiconductor device of this Embodiment. It is sectional drawing which shows roughly the manufacturing process (13th process) of the semiconductor device of this Embodiment. It is sectional drawing which shows schematically the manufacturing process (14th process) of the semiconductor device of this Embodiment. It is sectional drawing which shows schematically the manufacturing process (15th process) of the semiconductor device of this Embodiment. It is sectional drawing which shows schematically the manufacturing process (16th process) of the semiconductor device of this Embodiment. It is sectional drawing which shows schematically the manufacturing process (17th process) of the semiconductor device of this Embodiment. It is sectional drawing which shows schematically the manufacturing process (1st process) of the semiconductor device of a comparative example. It is sectional drawing which shows roughly the manufacturing process (2nd process) of the semiconductor device of a comparative example. It is sectional drawing which shows roughly the manufacturing process (3rd process) of the semiconductor device of a comparative example. It is sectional drawing which shows schematically the manufacturing process (4th process) of the semiconductor device of a comparative example. It is sectional drawing which shows roughly the manufacturing process (5th process) of the semiconductor device of a comparative example. It is sectional drawing which shows roughly the manufacturing process (6th process) of the semiconductor device of a comparative example. It is sectional drawing which shows roughly the manufacturing process (7th process) of the semiconductor device of a comparative example. It is a schematic sectional drawing which illustrates the state where the residue was generated by wafer inspection. It is a schematic sectional drawing for demonstrating the problem which arises in the manufacturing process of the semiconductor device of a comparative example.

  Embodiments according to the present invention will be described below with reference to the drawings.

  FIG. 1 is a diagram schematically showing a partial cross-sectional structure of a semiconductor device 10 according to an embodiment of the present invention. As shown in FIG. 1, a semiconductor device 10 has a semiconductor substrate 11 having an upper structure on which a semiconductor element (for example, a field effect transistor, a capacitor, or an inductor) is formed. The semiconductor substrate 11 is, for example, a semiconductor wafer. As the semiconductor substrate 11, for example, a bulk substrate or a SOI substrate (silicon-on-insulator substrate) including a structure made of a single crystal semiconductor, a polycrystalline semiconductor, or a compound semiconductor can be used. The semiconductor substrate 11 may include a lower structure such as a resin substrate, a metal substrate, or a glass substrate.

  On the semiconductor substrate 11, the lower wiring 12, the interlayer insulating film 13 formed so as to cover the lower wiring 12, the interlayer wiring 14 formed in the via of the interlayer insulating film 13, and the interlayer insulating film 13 A formed lower electrode (electrode pad) 15 and a passivation film 16 are formed. The lower wiring 12 is electrically connected to the semiconductor element, and the electrode 15 is electrically connected to the lower wiring 12 via an interlayer wiring (via wiring) 14. In the present embodiment, the semiconductor chip 2 is configured by the semiconductor element, the lower wiring 12, the interlayer insulating film 13, the interlayer wiring 14, the electrode 15, and the passivation film 16. The passivation film 16 is a protective film that covers a region excluding a part of the upper surface of the electrode 15 and mechanically and chemically protects the semiconductor element. The lower electrode 15 is the uppermost layer wiring in the semiconductor chip 2. The semiconductor chip 2 can be formed by a known wafer process.

  The semiconductor device 10 includes a lower base metal film (UBM film: Under Bump Metal layer) 20 formed on the lower electrode 15, a conductive post 22 formed on the lower base metal film 20, and a conductive post 22. An interlayer insulating film 21 having an opening in the upper surface, an upper base metal film (UBM film) 30 extending from the conductive post 22 to a region on the interlayer insulating film 21, and a redistribution layer 31 formed on the UBM film 30 An interlayer insulating film 32 covering the rewiring layer 31, a base metal film (UBM film) 40 formed in the opening of the interlayer insulating film 32, and a barrier metal 41 on the UBM film 40. And a metal terminal 42. As shown in FIG. 1, the UBM film 20 is formed so as to be in contact with the upper surface of the lower electrode 15. The conductive post 22 is erected on the UBM film 20 with the UBM film 20 as a base. A rewiring layer 31 is formed on the conductive post 22 with the UBM film 30 as a base. The rewiring layer 31 is sealed with a resin insulating film 32, and an UBM film 40 is formed in an opening of the insulating film 32, and a barrier metal 41 is formed with the UBM film 40 as a base. On the barrier metal 41, a metal terminal 42 for external connection is formed.

  2A is a diagram illustrating an example of a wafer 1 having a large number of semiconductor devices (W-CSP structures) 10,..., 10 on the surface, and FIG. FIG. The semiconductor devices 10,..., 10 are separated into pieces (separated from the wafer 1) by dicing. As shown in FIG. 2B, metal terminals 42,..., 42 connected to the mounting substrate are arranged on the surface of each semiconductor device 10 at a predetermined pitch. In the package structure of FIG. 2B, the metal terminals 42,..., 42 are formed in the peripheral portion of the surface of each semiconductor device 10, but the present invention is not limited to this, and the metal terminals 42,. .., 42 can be produced.

  A method for manufacturing the semiconductor device 10 having the above structure will be described below. 3 to 19 are cross-sectional views schematically showing manufacturing steps of the semiconductor device 10 of the present embodiment.

  First, the semiconductor chip 2 is formed on the semiconductor substrate 11 by a wafer process (FIG. 3). Specifically, after forming a semiconductor element (not shown) such as a field effect transistor on the semiconductor substrate 11, a pattern of the lower wiring 12 electrically connected to the semiconductor element is formed. Thereafter, an insulating material such as silicon oxide is deposited on the lower wiring 12 by, for example, a CVD method (chemical vapor deposition method) to form an insulating film. Next, a contact hole reaching the upper surface of the lower wiring 12 is formed in this insulating film by using a photolithography process, and a conductive material is buried in this contact hole by, for example, a CVD method. By planarizing the upper surface of the insulating film embedded with the conductive material, the interlayer insulating film 13 and the interlayer wiring 14 are formed. Next, a conductive layer such as aluminum is formed on the interlayer insulating film 13 by, for example, a sputtering method or a CVD method, and this conductive layer is patterned to be electrically connected to the lower wiring 12 via the interlayer wiring 14. The lower electrode 15 to be formed can be formed. Further, an insulating film such as a polyimide resin is formed on the lower electrode 15 and the interlayer insulating film 13, and this insulating film is patterned using a photolithography process, thereby exposing an upper surface portion of the lower electrode 15. A passivation film 16 having 16n is formed.

  After the above wafer process, wafer inspection using a probe needle (probe) is performed. Specifically, the quality of the semiconductor chip 2 is determined by measuring the electrical characteristics of the semiconductor chip 2 by placing the tip of a probe needle (not shown) on the exposed surface of the lower electrode 15. At this time, the tip portion of the probe needle scrapes the lower electrode 15 to form a contact mark (probe mark) on the surface of the lower electrode 15, and the shaving residue may remain as a residue near the surface of the lower electrode 15. is there. Alternatively, a residue may be introduced from the outside together with the tip portion of the probe needle and remain on the lower electrode 15.

  After the wafer inspection is performed, a conductive material is deposited on the surface of the lower electrode 15 and the surface of the passivation film 16 over the entire surface of the wafer, for example, by sputtering or vacuum evaporation, for example, about 0.5 μm to 1 μm. A UBM film 20B having a thickness is formed (FIG. 4). The UBM film 20B is, for example, one or more metal films selected from metal materials such as titanium (Ti), chromium (Cr), tungsten (W), gold (Au), and copper (Cu). Or an alloy film is included. The UBM film 20B is preferably a laminated film such as a Cu / Ti film, but may be a single layer film.

  Next, a resist film (first resist pattern) 50 having an opening 50n is formed immediately above the lower electrode 15 (FIG. 5). Further, with the UBM film 20B exposed in the opening 50n as a base (seed layer), a conductive film having a thickness (for example, about 3 μm to 10 μm) thinner than the resist film 50 in the opening 50n by electrolytic plating. A sex post 22 is formed (FIG. 6). The conductive post 22 may be formed of a copper plating film, for example. Thereafter, the resist film 50 is removed by ashing, and the exposed portion of the UBM film 20B is removed by wet etching using the conductive post 22 as an etching stopper film (FIG. 7). As a result, the conductive post 22 is erected on the lower electrode 15, and the UBM film 20 interposed only between the bottom surface of the conductive post 22 and the upper surface of the lower electrode 15 is formed.

  Next, a coating film 21B that covers the conductive posts 22 and the passivation film 16 is formed by applying a photosensitive resin material over the entire surface of the wafer, for example, by spin coating or printing (FIG. 8). As the photosensitive resin material, for example, a polyimide material having a relatively low curing temperature or a precursor of a PBO (polybenzoxazole) material can be used. Subsequently, the coating film 21B is exposed and patterned, and the coating film is solidified by applying heat treatment (curing) to the patterned insulating film in an inert gas atmosphere. Thereafter, a resist process is executed to remove resist residues (scum) (FIG. 9). As a result, an interlayer insulating film 21 having an opening 21n exposing a part of the upper surface of the conductive post 22 is formed. The interlayer insulating film 21 covers the upper end portion of the conductive post 22. The thickness of the interlayer insulating film 21 may be set to a value larger than the total thickness of the UBM film 20 and the conductive post 22 (for example, about 5 μm to 15 μm).

  Thereafter, a conductive material is deposited on the surfaces of the conductive posts 22 and the interlayer insulating film 21 by, for example, a sputtering method or a vacuum evaporation method to form a UBM film 30B having a thickness of about 0.5 μm to 1 μm, for example (FIG. 10). The UBM film 30B is, for example, one or more metal films selected from metal materials such as titanium (Ti), chromium (Cr), tungsten (W), gold (Au), and copper (Cu). Or what is necessary is just to include an alloy film. Further, the UBM film 30B may be either a single layer film or a laminated film.

  Further, a resist film (second resist pattern) 51 having an opening 51n is formed immediately above the conductive post 22 (FIG. 11). Further, using the UBM film 30B exposed in the opening 51n as a base (seed layer), the rewiring layer 31 is formed by, for example, electrolytic plating (FIG. 12). The rewiring layer 31 may be formed of, for example, a copper plating film. Thereafter, the resist film 51 is removed by ashing, and the exposed portion of the UBM film 30B is removed by wet etching using the rewiring layer 31 as an etching stop film (FIG. 13). As a result, patterns of the UBM film 30 and the rewiring layer 31 are formed.

  Next, a resin material is applied over the entire surface of the wafer by, for example, spin coating or printing, thereby forming an insulating film 32B that covers and seals the interlayer insulating film 21 and the rewiring layer 31 (FIG. 14). ). Subsequently, by patterning the insulating film 32B, an upper insulating film 32 having an opening 32n exposing a part of the upper surface of the rewiring layer 31 is formed (FIG. 15).

  Thereafter, a conductive material is deposited on the surfaces of the rewiring layer 31 and the upper insulating film 32 by, for example, sputtering or vacuum vapor deposition to form the UBM film 40B (FIG. 16). The UBM film 40B is, for example, one or more metal films selected from metal materials such as titanium (Ti), chromium (Cr), tungsten (W), gold (Au), and copper (Cu). Or an alloy film is included. Further, the UBM film 40B may be either a single layer film or a laminated film. Further, a resist film (third resist pattern) 53 having an opening 53n communicating with the opening 32n is formed (FIG. 17). Subsequently, using the UBM film 40B exposed in the openings 32n and 53n as a base (seed layer), a barrier metal 41 is formed by, for example, an electrolytic plating method, and a metal terminal material 42B is adhered onto the barrier metal 41 (FIG. 18). Here, the metal terminal material 42B may be composed of, for example, solder ball bumps.

  Thereafter, the resist film 53 is removed by ashing, and the exposed portion of the base metal film 40B is removed by etching using the barrier metal 41 and the metal terminal material 42B as an etching stopper film (FIG. 19). As a result, a structure having the UBM film 40, the barrier metal 41, and the metal terminal material 42B is formed. And the semiconductor device 10 which has the metal terminal 42 as shown in FIG. 1 is produced by fuse | melting the metal terminal material 42B using a reflow furnace.

  As described above, residue may remain near the upper surface of the lower electrode 15 by applying the probe needle to the lower electrode 15 in the wafer inspection after the wafer process. In the manufacturing method of the present embodiment, even if a residue remains, the residue is embedded in the conductive post 22 formed in the steps of FIGS. 6 and 7 without being exposed from the surface thereof. 8 or 9, the interlayer insulating film 21 formed in the process shown in FIGS. 8 and 9 is buried without being exposed from the surface thereof, or the conductive post 22 and the interlayer insulating film 21 are not exposed from these surfaces. Can be embedded. Therefore, when the patterned coating film is subjected to heat treatment (curing) to form the interlayer insulating film 21, the residue generated in the wafer inspection is not exposed to the outside on the coating film, the conductive post 22 or both. Since it is embedded, the generation of thermal stress due to the difference in thermal expansion coefficient between the resin composition of the coating film and the residue is suppressed. This is considered to be the reason why defects (cracks) caused by the residue are not generated in the interlayer insulating film 21. Therefore, by using the manufacturing method of the present embodiment, it is possible to manufacture the semiconductor device 10 with good electrical characteristics, and to suppress a decrease in yield.

  In the method of manufacturing the semiconductor device 10 according to the present embodiment, the UBM film 20B is formed so as to be in contact with the passivation film 16 and the lower electrode 15 in the step of FIG. Therefore, the UBM film 20B can exhibit high sealing performance with respect to the lower electrode 15 because the height difference Ha is small (for example, about 1 μm at the maximum). As will be described later, in the conventional manufacturing process, after an interlayer insulating film is formed on the passivation film 16, an UBM film is formed in a region where the step between the interlayer insulating film and the lower electrode 15 is large. For this reason, the sealing performance of the UBM film is low, and the plating solution may erode (etch) the lower electrode 15 when forming the metal plating film with the UBM film as a base. In the present embodiment, since the step Ha between the passivation film 16 and the lower electrode 15 is small, the UBM film 20B is effective as a blocking film against the plating solution when the conductive post 22 is formed with the UBM film 20B as a base. It functions, and the etching damage to the lower electrode 15 can be suppressed.

  Further, in the process of FIG. 10, the UBM film 30B is formed on the conductive post 22, but the step Hb between the conductive post 22 and the interlayer insulating film 21 is reduced by adjusting the height of the conductive post 22. can do. Therefore, when the redistribution layer 31 is formed with the UBM film 30B as a base (FIG. 12), the UBM film 30B effectively functions as a blocking film against the plating solution, and suppresses etching damage to the conductive post 22. it can.

  Next, for comparison with the manufacturing method according to the present embodiment, a method for manufacturing a semiconductor device of a comparative example will be described. 20 to 26 are cross-sectional views schematically showing manufacturing steps of the semiconductor device of the comparative example.

  First, similarly to the manufacturing method of the present embodiment, the semiconductor chip 2 is formed on the upper surface of the semiconductor substrate 11 by a wafer process (FIG. 20). After this wafer process, a wafer inspection is performed by bringing a probe needle (probe) into contact with the exposed surface of the lower electrode 15. Thereafter, a photosensitive resin material is applied onto the lower electrode 15 and the passivation film 16 to form a coating film, the coating film is exposed and patterned, and the patterned coating film is solidified by heat treatment (cure), Execute the discum process. As a result, an interlayer insulating film 25 having an opening 25n is formed on the lower electrode 15 and the passivation film 16 (FIG. 21).

  Next, a conductive material is deposited on the surfaces of the lower electrode 15 and the interlayer insulating film 25 by sputtering to form the UBM film 45B (FIG. 22). Thereafter, a resist film 60 having an opening 60n is formed (FIG. 23), and a rewiring layer 35 is formed by electrolytic plating using the UBM film 45B exposed in the opening 60n as a base (seed layer) (FIG. 24). ). Thereafter, the resist film 50 is removed by ashing, and the exposed portion of the UBM film 20B is removed by etching using the conductive post 22 as an etching stopper film (FIG. 25). Thereafter, as shown in FIG. 26, the interlayer insulating film 26, the UBM film 46, the barrier metal 47 and the metal terminal 48 are formed on the rewiring layer 35.

  As described above, a residue may be generated by applying the probe needle to the lower electrode 15 in the wafer inspection after the wafer process. In the manufacturing method of the comparative example, in the step of FIG. 21, the patterned coating film is solidified by heat treatment to form the interlayer insulating film 25, but a coating having a residue having a smaller thermal expansion coefficient than that of the coating film is patterned. It may be embedded in the film and exposed from the surface of the coating film. In this state, when the coating film is subjected to heat treatment and discum treatment, a large thermal stress is generated due to the difference in thermal expansion coefficient between the resin composition of the coating film and the residue, which is generated in the interlayer insulating film 25. It is considered that a defect (crack) is caused. In particular, when the residue is a shaving of the lower electrode 15, the difference in thermal expansion coefficient between the residue and the resin composition of the coating film is large, and the interlayer insulating film 25 is likely to be defective. FIG. 27A is a cross-sectional view showing an example of a residue 70 embedded in the interlayer insulating film 25 and exposed from the surface thereof. Defects (cracks) occur from the position where the residue 70 is embedded as a base point. This type of defect has the problem of causing an electrical short circuit and degrading the electrical characteristics of the semiconductor device.

  On the other hand, in the manufacturing method of the present embodiment, the residue generated in the wafer inspection is embedded in the conductive posts 22 formed in the steps of FIGS. 6 and 7 without being exposed from the surface thereof. The interlayer insulating film 21 formed in the process of FIG. 8 and FIG. 9 is embedded in a state where it is not exposed from the surface, or the conductive post 22 and the interlayer insulating film 21 are not exposed from these surfaces. Can be embedded. FIG. 27B is a cross-sectional view showing an example of a residue 71 embedded in the conductive post 22 and the interlayer insulating film 25 and not exposed from the surface. When the patterned coating film is solidified by heat treatment to form the interlayer insulating film 21, even if the residue 71 is embedded in the coating film, the residue 71 is not exposed to the outside. Generation of thermal stress between the resin composition and the residue 71 is suppressed. Therefore, it is possible to prevent a defect (crack) from occurring in the interlayer insulating film 21. Therefore, even if a residue remains near the surface of the lower electrode 15 in the wafer inspection, it is possible to prevent the electrical characteristics of the semiconductor device from being deteriorated and the yield from being lowered.

  In the manufacturing method of the comparative example, after the wafer process, the interlayer insulating film 25 is formed on the wafer, and the UBM film 45B is formed in the opening 25n of the interlayer insulating film 25 (FIG. 22). Here, since the film thickness of the interlayer insulating film 25 is usually about 5 μm to 10 μm, a large step Hc is generated between the interlayer insulating film 25 and the lower electrode 15. At this time, as shown in FIG. 28, in the opening 25n, the thickness of the UBM film 45B is reduced at the bottom of the side wall of the interlayer insulating film 25, and the sealing performance of the UBM film 45B against the plating solution is deteriorated. Since the plating solution used for electrolytic plating generally has a property of dissolving metal, there is a problem that the plating solution (etchant) Et erodes the lower region 15e through the bottom of the side wall of the interlayer insulating film 25. is there.

  In contrast, in the present embodiment, as shown in FIG. 4, since the step Ha between the passivation film 16 and the lower electrode 15 is small, the UBM film 20B exhibits high sealing performance against the plating solution. Can do. Also, as shown in FIG. 10, the step Hb between the conductive post 22 and the interlayer insulating film 21 can be reduced by adjusting the height of the conductive post 22, so that the UBM film 30B is made of a plating solution. Can exhibit high sealing performance.

  DESCRIPTION OF SYMBOLS 1 Wafer, 2 Semiconductor chip, 10 Semiconductor device, 11 Semiconductor substrate, 12 Lower wiring, 13 Interlayer insulation film, 14 Interlayer wiring (via wiring), 15 Lower electrode, 16 Passivation film, 20, 20B Underlayer metal film (UBM film) ), 21, 25, 26 Interlayer insulating film, 22 Conductive post, 30, 30B Upper layer underlayer metal film (UBM film), 31, 35 Rearrangement wiring layer (rewiring layer), 32 Upper layer insulating film, 32B Insulating film, 40, 45, 46 Underlying metal film (UBM film), 41 barrier metal, 42, 48 metal terminal, 47 barrier metal, 50, 51, 53 resist film.

Claims (6)

A semiconductor substrate;
A semiconductor element formed on the first main surface of the semiconductor substrate;
A first insulating film covering the first main surface;
An electrode electrically connected to the semiconductor element and formed on the first insulating film and having a first region on the surface and a second region surrounding the first region ;
A second insulating film covering the first insulating film and the electrode and having an opening exposing the first region and the second region of the electrode;
A residue generated from the electrode by contact of the probe needle with the upper surface of the electrode, and remaining on at least one of the upper surface of the electrode and the second insulating film;
A conductive post formed immediately above the electrode and electrically connected to the first region of the electrode and having a top surface corresponding to the opening connected to a conductor;
A third insulating film covering a side surface of the conductive post, the second insulating film, and the second region of the electrode ;
With
The residue is embedded in at least one of the conductive post and the third insulating film ,
The distance between the second region of the electrode and the conductor corresponding to the second region is longer than the distance between the first region of the electrode and the conductor corresponding to the first region. Semiconductor device.   The semiconductor device according to claim 1, wherein the third insulating film is a thermosetting resin.   The semiconductor device according to claim 1, wherein the first conductive material and the second conductive material that are stacked constitute the conductive post.   4. The semiconductor device according to claim 1, wherein the conductive post and the conductor are connected via a third conductive material. 5.   The semiconductor device according to claim 1, wherein the conductor extends from the top surface onto the third insulating film. 6. The semiconductor device according to claim 1, wherein the residue has a smaller coefficient of thermal expansion than the third insulating film.

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