JP6139412B2 - 原子層成膜のための装置及び方法 - Google Patents
原子層成膜のための装置及び方法 Download PDFInfo
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- JP6139412B2 JP6139412B2 JP2013551935A JP2013551935A JP6139412B2 JP 6139412 B2 JP6139412 B2 JP 6139412B2 JP 2013551935 A JP2013551935 A JP 2013551935A JP 2013551935 A JP2013551935 A JP 2013551935A JP 6139412 B2 JP6139412 B2 JP 6139412B2
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- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
- B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
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- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G51/00—Conveying articles through pipes or tubes by fluid flow or pressure; Conveying articles over a flat surface, e.g. the base of a trough, by jets located in the surface
- B65G51/02—Directly conveying the articles, e.g. slips, sheets, stockings, containers or workpieces, by flowing gases
- B65G51/03—Directly conveying the articles, e.g. slips, sheets, stockings, containers or workpieces, by flowing gases over a flat surface or in troughs
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67784—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks
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Description
2 成膜空間
3 成膜空間
4 前駆体供給部
40 反応物質供給部
5 基板表面
6 前駆体排出部
7 ガスベアリング
8 ベアリングガス導入部
9 基板
10 支持部
11 流動制限表面
13 圧力制御部
15 搬入領域
16 稼働領域
17 搬出領域
18 駆動部
18A 第1の駆動部
18B 第2の駆動部
18.1、18.2 壁部
19 壁部
19A 頂部壁部
19B 底部壁部
29 キャビティ
30 前駆体排出部
31 処理領域
32 受容要素
34、34A、34B 駆動ポケット
36 ガス流動の方向
42 可動ピン
48A、48B 心出しエアベアリング
49A、49B 基板の側面
60 排出部
62.i 圧力解放切欠き部
64 ベアリング圧力構成部
72.i.j 装置
90 基板端部
91 基板側部
181 吸入部
182 放出部
183 ガス流動
185 制限部
560 心出しエアベアリング
561 心出しベアリングガス供給部
562 凹部空間
Claims (15)
- 前駆体供給部及び前駆体排出部が提供される成膜空間及びガスベアリングを備える導入ヘッドであって、前記供給部及び前記排出部が、前記前駆体供給部から前記成膜空間を介して前記前駆体排出部へ前駆体ガス流動を提供するように配置され、使用時には前記成膜空間が前記導入ヘッド及び基板表面によって画定され、前記ガスベアリングが、前記導入ヘッドと前記基板表面との間に、ガスベアリングを形成するベアリングガスを導入するように構成されたベアリングガス導入部を備える、導入ヘッド;
前記導入ヘッドと対向して配置され、搬送平面内に導入ヘッドガスベアリング圧力に対抗するガスベアリング圧力構成を提供するように構成された支持部であって、前記基板が、前記導入ヘッドと前記支持部との間で前記ガスベアリング圧力構成によって、支持されることなく均衡される、支持部;並びに
駆動部(18)を備える搬送システムであって、前記駆動部が、前記基板の平面に沿った前記基板及び前記導入ヘッドの相対的な移動を提供するように構成される搬送要素を備え、前記駆動部の前記搬送要素が、方向を定められたガス流動を提供し、前記相対的な運動を提供する駆動ポケットを形成する少なくとも1つのガス吸入部及び少なくとも1つのガス放出部を備え、少なくとも1つの前記ガス吸入部が、処理される前記基板表面に対向し、少なくとも1つの前記ガス放出部が反応物質を提供するように構成されて、前記駆動部内に、前記成膜空間内に供給される前記前駆体と反応する反応物質を提供する、搬送システムを備える、薄板状の基板の表面上への原子層成膜のための装置。 - 前記成膜空間が、前記基板表面に対して成膜空間高さD2を画定し;前記ガスベアリングが、前記基板に対して、前記成膜空間高さD2よりも小さな空隙間隔D1を画定する、請求項1に記載の装置。
- 前記前駆体排出部が、前記前駆体供給部に隣接して提供され、前記基板の搬送方向と平行な前駆体ガス流動を画定し;及び/または、使用時には、前記前駆体排出部及び前記前駆体供給部が、共に基板表面に対向する、請求項1または2に記載の装置。
- 前記導入ヘッドが、前記前駆体供給部;排出部及び/または前記ガス導入部のいずれかを、基板の存在に依存して切り替えるための圧力制御部を備える、請求項1から3のいずれか一項に記載の装置。
- 前記支持部が、前駆体排出部に対向する排出部を備え、前記支持部の前記排出部が、前記成膜空間内の基板の存在に依存して切り替え可能であり、基板端部が前記前駆体排出部を通過すると、前駆体流動が、前記支持部に対向する前記基板表面から離れるように提供される、請求項4に記載の装置。
- 前記導入ヘッドが、反応物質供給部が提供される追加的な成膜空間を備え、使用時には、前記追加的な成膜空間が、流動障壁によって画定され、前記装置が、好適には反応物質ガス、プラズマ、レーザー誘起放射及び紫外線放射のうち少なくとも1つを、前記追加的な成膜空間内に提供して、前記基板表面の少なくとも一部の上に前記前駆体ガスを付与した後に前記前駆体を反応させるように構成された、請求項1から5のいずれか一項に記載の装置。
- 前記搬送システムが搬入領域;搬出領域;及び前記搬入領域に隣接し前記搬送平面に対して位置合わせされた稼働領域を備え;前記導入ヘッドが前記稼働領域内に提供され、薄板状の基板が前記搬入領域内に挿入可能である、請求項1から6のいずれか一項に記載の装置。
- 前記導入ヘッド成膜空間が、前記基板表面の平面に、導入ヘッド成膜空間の幅を画定する前記搬送方向に対して横断する方向に延長する細長い形状を有し、前記駆動部内において、前記反応物質供給部が、駆動部成膜空間内に提供され;前記駆動部成膜空間が、前記導入ヘッド成膜空間の幅よりも広い幅方向の寸法を有する、請求項7に記載の装置。
- 前記導入ヘッドが前記駆動部成膜空間に隣接する、請求項8に記載の装置。
- 前記搬送システムが、ガス吸入部及び放出部が交互に配置されて提供される搬送要素を備え;ガスベアリング圧力及び前記搬送平面に沿ったガス流動を提供し、前記ガス流動を制御することによって前記基板の移動を提供するように構成されたガス流動制御システムを備える、請求項1に記載の装置。
- 前記ガス放出部及び吸入部の対が、前記搬送平面に対向するポケット内に提供されて、前記ポケット内に前記搬送平面に沿って放出部から吸入部への流動を提供し、前記ガス放出部が、前記基板平面に沿って前記基板を移動させるための指向性ベアリング力を有する指向性エアベアリングを提供する流動制限部を有して提供される、請求項10に記載の装置。
- 基板を心出しするための第1の心出しエアベアリング及び第2の心出しエアベアリングを有して提供され、前記搬入領域と前記搬出領域との間の中心線に沿って前記基板を移動させる、請求項7に記載の装置。
- 導入ヘッドを含む装置を用いた基板表面上への原子層成膜の方法であって、前記導入ヘッドが、前駆体供給部及びベアリングガス導入部で提供されるガスベアリングを有して提供される成膜空間を備え、
a)前記前駆体供給部から前記成膜空間内に前駆体ガスを供給して前記基板表面に接触させる段階;
b)前記導入ヘッドと前記基板表面との間にガスベアリングを形成するベアリングガスを導入する段階;
c)前記成膜空間と前記基板との間に、前記基板表面の平面での相対的な運動を確立する段階;及び
d)搬送平面内の前記導入ヘッドガスベアリング圧力に対抗するガスベアリング圧力の構成を提供し、前記導入ヘッドと支持部との間の前記ガスベアリング圧力構成によって前記基板を支持することなしに均衡させる段階;
e)駆動部において、前記基板側面(92)に向かうベアリングガス流動を提供し、使用時に、ベアリング圧力が前記基板の側面に対抗して提供され、搬送方向に沿って前記基板を心出しする段階;及び
f)前記駆動部において、前記成膜空間内に供給される前駆体と反応する反応物質を提供する段階、を備える、方法。 - 前記装置が反応空間を備え、前記前駆体を反応物質ガスと反応させる前記反応空間内に、前記基板表面の少なくとも一部に前記前駆体ガスを付与した後、反応物質ガス、プラズマ、レーザー誘起放射及び紫外線放射のうち少なくとも1つを提供して、前記基板表面の少なくとも一部に原子層を得る段階を備える、請求項13に記載の方法。
- ガスベアリング圧力及び前記搬送平面に沿ったガス流動を提供し、ガス流動システムの制御に対して前記基板の選択的な運動を提供して前記導入ヘッドに対する前記基板の往復移動を提供するように構成されたガス流動を提供する段階をさらに備える、請求項13に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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EP11152805.5 | 2011-01-31 | ||
EP11152805A EP2481833A1 (en) | 2011-01-31 | 2011-01-31 | Apparatus for atomic layer deposition |
PCT/NL2012/050052 WO2012105834A1 (en) | 2011-01-31 | 2012-01-31 | Apparatus and method for atomic layer deposition |
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JP2014510834A JP2014510834A (ja) | 2014-05-01 |
JP6139412B2 true JP6139412B2 (ja) | 2017-05-31 |
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JP2013551935A Expired - Fee Related JP6139412B2 (ja) | 2011-01-31 | 2012-01-31 | 原子層成膜のための装置及び方法 |
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US (1) | US20140037847A1 (ja) |
EP (2) | EP2481833A1 (ja) |
JP (1) | JP6139412B2 (ja) |
KR (1) | KR101991526B1 (ja) |
CN (1) | CN103415650B (ja) |
TW (1) | TWI589729B (ja) |
WO (1) | WO2012105834A1 (ja) |
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EP2159304A1 (en) * | 2008-08-27 | 2010-03-03 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Apparatus and method for atomic layer deposition |
EP2281921A1 (en) * | 2009-07-30 | 2011-02-09 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Apparatus and method for atomic layer deposition. |
EP2481832A1 (en) * | 2011-01-31 | 2012-08-01 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Apparatus for atomic layer deposition |
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DE102012213095A1 (de) * | 2012-07-25 | 2014-01-30 | Roth & Rau Ag | Gasseparation |
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JP6863199B2 (ja) | 2017-09-25 | 2021-04-21 | トヨタ自動車株式会社 | プラズマ処理装置 |
KR20230037057A (ko) * | 2019-08-16 | 2023-03-15 | 램 리써치 코포레이션 | 웨이퍼 내에서 차동 보우를 보상하기 위한 공간적으로 튜닝 가능한 증착 |
JP7437187B2 (ja) * | 2020-02-26 | 2024-02-22 | Jswアクティナシステム株式会社 | 浮上搬送装置、及びレーザ処理装置 |
NL2026895B1 (en) * | 2020-11-13 | 2022-06-30 | Levitech B V | Multi-chamber apparatus and method for ALD |
WO2023183526A1 (en) * | 2022-03-24 | 2023-09-28 | Massachusetts Institute Of Technology | Controlled delamination through surface engineering for nonplanar fabrication |
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NL8203318A (nl) * | 1982-08-24 | 1984-03-16 | Integrated Automation | Inrichting voor processing van substraten. |
US6200389B1 (en) * | 1994-07-18 | 2001-03-13 | Silicon Valley Group Thermal Systems Llc | Single body injector and deposition chamber |
FR2736632B1 (fr) * | 1995-07-12 | 1997-10-24 | Saint Gobain Vitrage | Vitrage muni d'une couche conductrice et/ou bas-emissive |
US7269475B1 (en) * | 1998-03-02 | 2007-09-11 | Xerox Corporation | Distributed control system with global contraints for controlling object motion with smart matter |
US6793733B2 (en) * | 2002-01-25 | 2004-09-21 | Applied Materials Inc. | Gas distribution showerhead |
US20070234956A1 (en) * | 2006-04-05 | 2007-10-11 | Dalton Jeremie J | Method and apparatus for providing uniform gas delivery to a reactor |
US7789961B2 (en) | 2007-01-08 | 2010-09-07 | Eastman Kodak Company | Delivery device comprising gas diffuser for thin film deposition |
US8398770B2 (en) | 2007-09-26 | 2013-03-19 | Eastman Kodak Company | Deposition system for thin film formation |
US8333839B2 (en) * | 2007-12-27 | 2012-12-18 | Synos Technology, Inc. | Vapor deposition reactor |
US20090291209A1 (en) * | 2008-05-20 | 2009-11-26 | Asm International N.V. | Apparatus and method for high-throughput atomic layer deposition |
EP2159304A1 (en) * | 2008-08-27 | 2010-03-03 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Apparatus and method for atomic layer deposition |
EP2281921A1 (en) * | 2009-07-30 | 2011-02-09 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Apparatus and method for atomic layer deposition. |
NL2005049C2 (en) * | 2010-07-07 | 2012-01-10 | Levitech B V | Method and apparatus for contactlessly advancing substrates. |
EP2481832A1 (en) * | 2011-01-31 | 2012-08-01 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Apparatus for atomic layer deposition |
EP2481830A1 (en) * | 2011-01-31 | 2012-08-01 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Apparatus for atomic layer deposition. |
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2011
- 2011-01-31 EP EP11152805A patent/EP2481833A1/en not_active Withdrawn
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2012
- 2012-01-31 EP EP12704563.1A patent/EP2670883B1/en not_active Not-in-force
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- 2012-01-31 CN CN201280012711.XA patent/CN103415650B/zh not_active Expired - Fee Related
- 2012-01-31 JP JP2013551935A patent/JP6139412B2/ja not_active Expired - Fee Related
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- 2012-01-31 TW TW101103004A patent/TWI589729B/zh not_active IP Right Cessation
- 2012-01-31 US US13/982,269 patent/US20140037847A1/en not_active Abandoned
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US20140037847A1 (en) | 2014-02-06 |
KR101991526B1 (ko) | 2019-06-20 |
EP2670883B1 (en) | 2016-04-06 |
CN103415650B (zh) | 2017-02-22 |
EP2670883A1 (en) | 2013-12-11 |
CN103415650A (zh) | 2013-11-27 |
TWI589729B (zh) | 2017-07-01 |
WO2012105834A1 (en) | 2012-08-09 |
EP2481833A1 (en) | 2012-08-01 |
TW201241229A (en) | 2012-10-16 |
KR20140020887A (ko) | 2014-02-19 |
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