JP6135032B2 - Light emitting device, vehicle lamp, and stress relief part molding method - Google Patents

Description

  The present invention relates to a light emitting device, a vehicular lamp, and a stress relief molding method, and in particular, a light emitting device having a structure in which a semiconductor light emitting element (for example, a semiconductor laser light source) and a translucent member are combined, a vehicular lamp, and stress. The present invention relates to a relief part molding method.

  Conventionally, a light emitting device having a structure in which a semiconductor light emitting element (for example, a semiconductor laser light source) and a translucent member are combined has been proposed (for example, see Patent Document 1).

  As shown in FIG. 14, the light emitting device 200 described in Patent Document 1 includes a semiconductor laser light source 210, a translucent member 220 (phosphor) disposed at a position separated from the semiconductor laser light source 210, a semiconductor laser light source 210, and A condensing lens 230 disposed between the translucent member 220, a semiconductor laser light source 210, a holder 240 for holding the translucent member 220 and the condensing lens 230, and the like are provided.

  In the light emitting device 200 described in Patent Document 1, the laser light from the semiconductor laser light source 210 is condensed by the condenser lens 230, passes through the through hole 242, and is transmitted through the through hole 242. The sexual member 220 is locally irradiated. The translucent member 220 irradiated with the laser light emits laser light from the semiconductor laser light source 210 that transmits the light and light (light emission) that is excited and emitted by the laser light from the semiconductor laser light source 210. The translucent member 220 is firmly fixed by the fixing member 250 from the viewpoint of preventing the light-transmitting member 220 from dropping and directing the laser beam to the outside.

JP 2010-165834 A

  However, in the light emitting device 200 configured as described above, although it is possible to prevent the translucent member 220 from falling off, heat generated due to laser light from a semiconductor laser light source that is locally irradiated. As a result, the fixing member 250 repeats thermal expansion and contraction, so that stress is generated in the translucent member 220 and the translucent member 220 may be damaged or damaged.

  The present invention has been made in view of such circumstances, and a light-emitting device capable of preventing a light-transmitting member from being damaged or damaged even if the fixing member repeatedly undergoes thermal expansion and contraction. It is an object of the present invention to provide a used vehicle lamp and a stress relief part molding method.

  In order to achieve the above object, the invention according to claim 1 is a base portion including a surface including a recess, a back surface opposite to the surface, and a through hole penetrating the bottom surface of the recess and the back surface; A translucent member fixed to the bottom surface of the recess in a state of covering the through hole, a semiconductor light emitting element that emits light that passes through the through hole and irradiates the translucent member, and the semiconductor light emitting element In an intimate contact state with the optical system that condenses the light from and locally irradiates the translucent member, and at least part of the bottom surface of the recess and part of the side surface of the translucent member, A reflective member disposed in the recess, and the reflective member includes a stress relief portion for reducing thermal stress generated in the reflective member when irradiated with light from the semiconductor light emitting element. It is characterized by including.

  According to the first aspect of the present invention, the following advantages are obtained.

  First, it is possible to prevent the translucent member from falling off. This is because the reflecting member is in close contact with at least a part of the bottom surface of the recess and a part of the side surface of the translucent member and functions as a fixing member that fixes the translucent member.

  Secondly, even if the reflecting member as a fixing member for fixing the translucent member repeats thermal expansion and contraction, the translucent member can be prevented from being damaged or damaged. This is because the thermal stress generated in the reflecting member as a fixing member for fixing the translucent member is reduced by the action of the stress relief portion.

  Third, the light extraction efficiency is improved. This is because the reflective member is in close contact with and covers at least a part of the side surface of the translucent member, so that the light emitted from the side surface of the translucent member is reflected by the reflective member. This is due to re-incidence. As a result, the light extraction efficiency is improved as compared with the case where the side surface of the translucent member is not covered with the reflecting member.

  According to a second aspect of the present invention, in the first aspect of the present invention, the stress relief portion is at least one concave portion formed in the reflecting member.

  According to the second aspect of the present invention, it is possible to prevent the translucent member from being damaged or damaged even if the reflecting member as the fixing member that fixes the translucent member repeatedly undergoes thermal expansion and contraction. Become. This is because the thermal stress generated in the reflecting member as a fixing member for fixing the translucent member is reduced by the action of the concave portion (stress relief portion).

  The invention described in claim 3 is the invention described in claim 1 or 2, characterized in that the reflecting member is a white resin having elasticity (and / or adhesiveness) and reflectivity.

  According to the third aspect of the present invention, the following advantages are obtained.

  First, it is possible to prevent the translucent member from falling off. This is because the white resin (reflective member) having elasticity (and / or adhesiveness) and reflectivity is in close contact with at least part of the bottom surface of the recess and part of the side surface of the translucent member. This is because it functions as a fixing member for fixing the member.

  Secondly, even if the white resin (reflecting member) as a fixing member for fixing the translucent member repeats thermal expansion and contraction, the translucent member can be prevented from being damaged or damaged. This is because the thermal stress generated in the white resin (reflecting member) as a fixing member for fixing the translucent member is reduced by the action of the stress relief portion.

  Third, the light extraction efficiency is improved. This is because the white resin (reflective member) having elasticity (and / or adhesiveness) and reflectivity adheres to and covers at least a part of the side surface of the translucent member. This is because the light emitted from the side surface is reflected by the white resin (reflecting member) and reenters the translucent member. As a result, the light extraction efficiency is improved as compared with the case where the side surface of the translucent member is not covered with the white resin (reflecting member).

  The invention according to claim 4 is the invention according to any one of claims 1 to 3, wherein the translucent member is a wavelength conversion member including a diffusion layer and a wavelength conversion layer, and the diffusion layer is A first surface fixed to the surface in a state of covering the through hole and a second surface opposite to the first surface, and diffusing light from the semiconductor light emitting element that irradiates the first surface; The wavelength conversion layer includes a third surface bonded to the second surface and a fourth surface opposite to the third surface, and the second surface emits diffused light as the diffused light. The diffused light incident on the third surface is wavelength-converted and emitted from the fourth surface.

  According to the invention described in claim 4, it is possible to suppress a decrease in efficiency due to luminance saturation and temperature quenching. This is because the light from the semiconductor light emitting element collected by the optical system (for example, a condensing lens) does not enter the wavelength conversion layer as local light, but is diffused by the diffusion layer and the luminance distribution is substantially reduced. This is because the light is incident on the wavelength conversion layer as uniform diffused light.

  Note that luminance saturation is the energy density of light (for example, laser light from a semiconductor laser light source) when the energy density of light (for example, laser light from a semiconductor laser light source) exceeds a certain value. This is a phenomenon that does not increase with the increase in temperature, and temperature quenching is fluorescence caused by heat caused by light (for example, laser light from a semiconductor laser light source) when excited at a high energy density like a semiconductor laser light source. A phenomenon in which the efficiency of the body itself decreases.

  According to a fifth aspect of the present invention, in the invention of the fourth aspect, the thickness of the diffusion layer is set to a thickness at which the luminance distribution of the diffused light emitted from the second surface is substantially uniform. It is characterized by.

  According to the fifth aspect of the present invention, it is possible to improve luminance unevenness. This is because the light from the semiconductor light emitting element collected by the optical system (for example, a condensing lens) does not enter the wavelength conversion layer as local light, but is diffused by the diffusion layer and the luminance distribution is substantially reduced. This is because the light is incident on the wavelength conversion layer as uniform diffused light.

  This invention can also be specified as follows as invention of a vehicle lamp.

  A vehicle lamp comprising: the light-emitting device according to any one of claims 1 to 6; and an optical system configured to control light from the light-emitting device to irradiate the front of the vehicle. .

  According to a seventh aspect of the present invention, in the bottom surface of the concave portion of the base portion including the front surface including the concave portion, the back surface on the opposite side, and the through hole penetrating the bottom surface of the concave portion and the back surface, A step of fixing the translucent member in a state of covering the hole, a step of inserting a ring having substantially the same diameter as the concave portion into the concave portion, an inner wall of the ring, a bottom surface of the concave portion, and the translucent member. The method includes a step of filling a space surrounded by the side surface with a white resin having viscosity and reflectivity, and a step of removing the ring after the white resin is cured.

  According to the seventh aspect of the present invention, it is possible to provide a stress relief part molding method suitable for molding the stress relief part in the inventions of the first to fifth aspects.

  Advantageous Effects of Invention According to the present invention, a light-emitting device capable of suppressing damage and damage to a translucent member even when the fixing member repeatedly undergoes thermal expansion and contraction, a vehicle lamp using the light-emitting device, and a stress relief portion molding method Can be provided.

It is a perspective view of the light-emitting device 10 which is one Embodiment of this invention. 1 is a longitudinal sectional view of a light emitting device 10. FIG. 3 is an enlarged partial cross-sectional view in the vicinity of a base portion 26. FIG. (A)-(c) is a case where the lower surface 36a (center) of each of the three diffusion layers 36 having different thicknesses h is locally (spotted) irradiated with the laser light condensed by the condenser lens 16. The brightness distribution of the diffused light emitted from the upper surface 36b of the diffusion layer 36. 2A is a top view of the light emitting device 10, and FIG. 2B is a top view of the light emitting device 10 (modification example). (A)-(d) It is a figure showing the shaping | molding process of the reflection member 18 containing the stress relief | release part 18a. (A)-(c) It is the figure showing the other shaping | molding process (modification) of the reflection member 18 containing the stress relief | release part 18a. (A) Stress generated by irradiation with light (laser light in the present embodiment) from the semiconductor light emitting element 14 when the stress relief portion 18a is not formed (thermal stress generated in the reflecting member 18 and (B) a stress generated by irradiation with laser light from the semiconductor light emitting element when the stress relief portion 18a is formed (reflection) It is a contour diagram of the thermal stress generated in the member 18 and the stress generated around the reflecting member 18 due to the thermal stress. (A) An enlarged partial cross-sectional view in the vicinity of the recess 30 in FIG. 8 (a), (b) a Mises stress value obtained by line analysis of the bottom surface 30a (dashed line) of the recess 30 shown in FIG. It is a graph plotted in a coordinate system in which the equivalent stress value [Pa] of Mises and the horizontal axis is the distance [mm] from the center of the bottom surface 30a. 8A is an enlarged partial cross-sectional view in the vicinity of the concave portion 30 in FIG. 8B, and FIG. 8B is a vertical axis representing the Mises stress value obtained by line analysis of the bottom surface 30a (wavy line) of the concave portion 30 shown in FIG. Is a graph plotted in a coordinate system in which the equivalent stress value [Pa] of Mises and the horizontal axis is the distance [mm] from the center of the bottom surface 30a. It is a longitudinal cross-sectional view of the light-emitting device 10 (modification example) using the light guide 48. FIG. An example of a so-called direct projection type (also called a direct type) vehicular lamp 50 that uses a projection lens 52 as an optical system configured to control the light from the light emitting device 10 and irradiate the front of the vehicle. It is. This is an example of a so-called projector-type vehicular lamp 60 that uses a reflecting surface 62, a shade 64, and a projection lens 66 as an optical system configured to control light from the light emitting device 10 and irradiate the front of the vehicle. . It is sectional drawing of the conventional light-emitting device.

  Hereinafter, a light emitting device according to an embodiment of the present invention will be described with reference to the drawings.

  FIG. 1 is a perspective view of a light emitting device 10 according to an embodiment of the present invention, and FIG. 2 is a longitudinal sectional view.

  As shown in FIGS. 1 and 2, the light emitting device 10 includes a light transmissive member 12, a semiconductor light emitting element 14, a condensing lens 16, a reflecting member 18, and holders (first holder 22, second holder 40) for holding them. ) Etc.

  As shown in FIG. 2, the first holder 22 is made of a metal such as stainless steel, and is provided on a cylindrical tube portion 24, a circular base portion 26 that closes an upper opening end thereof, and an upper outer periphery of the tube portion 24. The flange portion 28 and the like are included.

  FIG. 3 is an enlarged partial cross-sectional view in the vicinity of the base portion 26.

  As shown in FIG. 3, the base portion 26 includes a surface 32 including the recess 30, a back surface 34 on the opposite side, and a through hole H that penetrates the surface 32 (the bottom surface 30 a of the recess 30) and the back surface 34. Contains.

  The translucent member 12 is a wavelength conversion member including a diffusion layer 36 (also referred to as a diffusion plate) and a wavelength conversion layer 38. Note that the diffusing layer 36 may be omitted, and the entire translucent member 12 may be configured by the wavelength conversion layer 38.

  The diffusion layer 36 has a lower surface 36a (corresponding to the first surface of the present invention) fixed to the surface 32 (the bottom surface 30a of the recess 30) in a state of covering the through hole H, and an upper surface 36b (the first surface of the present invention) on the opposite side. (Corresponding to the second surface) and light from the semiconductor light emitting element 14 that irradiates the lower surface 36a (corresponding to the first surface of the present invention) locally (spotwise) (in this embodiment, laser light) ) And is emitted as diffused light from the upper surface 36b (corresponding to the second surface of the present invention).

As the diffusion layer 36, for example, a composite of YAG (for example, 25%) and alumina Al ₂ O ₃ (for example, 75%) into which an activator (also referred to as a light emission center) such as cerium Ce is not introduced ( For example, a sintered body having a rectangular shape and a plate shape or a layer shape (for example, a rectangle of 0.4 mm × 0.8 mm and a thickness of 300 to 400 μm) including a lower surface 36a and an upper surface 36b arranged substantially parallel to each other. ) Can be used.

  The lower surface 36a of the diffusion layer 36 (excluding the region exposed from the through hole H) and the surface 32 of the base portion 26 (the bottom surface 30a of the recess 30) are bonded and fixed, for example, with a silicon-based adhesive.

  The diffusion layer 36 is not limited to the above, and may be a composite of YAG and glass, for example, or may be one using other materials. The thickness of the diffusion layer 36 may be substantially uniform over the entire region, or may be partially different. The lower surface 36a and the upper surface 36b of the diffusion layer 36 may be a flat surface, a curved surface, or a surface including unevenness and / or a curved surface. The outer shape of the lower surface 36a and the upper surface 36b of the diffusion layer 36 may be a circle, an ellipse, or other shapes other than the rectangle.

  In the present embodiment, the thickness of the diffusion layer 36 is set to 300 to 400 μm from the following viewpoint.

  The inventor of the present application increases the thickness h (see FIG. 3) of the diffusion layer 36 to improve the luminance unevenness of the diffused light emitted from the upper surface 36b of the diffusion layer 36, so that the luminance distribution is uniform (or substantially). Uniform).

4A to 4C, the lower surface 36a (center) of each of the three diffusion layers 36 having different thicknesses h is locally (spotted) with the laser light condensed by the condenser lens 16. FIG. The luminance distribution of the diffused light emitted from the upper surface 36b of the diffusion layer 36 when irradiated is shown. The diffusion layer 36 is a composite of YAG (25%) and alumina Al ₂ O ₃ (75%) in which an activator such as cerium Ce is not introduced (rectangular plate size of 0.4 mm × 0.8 mm). The spot size of the laser light from the semiconductor light emitting element 14 collected by the condenser lens 16 was adjusted to be an elliptical shape having a long side of about 100 μm and a short side of about 20 to 30 μm. The side surface of the diffusion layer 36 is covered with the reflecting member 18 (white resin).

Referring to FIGS. 4A to 4C, the thickness h of the diffusion layer 36 is 100 μm (see FIG. 4A) → 200 μm (see FIG. 4B) → 400 μm (FIG. 4C). As can be seen, the luminance unevenness is gradually improved as the thickness increases, and the luminance distribution becomes uniform (or substantially uniform) at the thickness h = 400 μm. This is because when the thickness h of the diffusion layer 36 is increased, the number of times of scattering (YAG and alumina Al ₂ O ₃ ) of the laser light (and light emission by the laser light) collected by the condenser lens 16 in the diffusion layer 36 is increased. This is because the number of times of scattering due to the difference from the refractive index increases and becomes uniform, and the uniformed laser light (and light emission by the laser light) is emitted from the upper surface 36 b of the diffusion layer 36.

  As described above, it can be understood that by increasing the thickness h of the diffusion layer 36, the luminance unevenness of the diffused light emitted from the upper surface 36b of the diffusion layer 36 is improved, and the luminance distribution becomes uniform (or substantially uniform).

  Based on the above knowledge, the thickness h of the diffusion layer 36 is such that the luminance distribution of the diffused light emitted from the upper surface 36b of the diffusion layer 36 is uniform (or substantially uniform) (in this embodiment, the thickness h = 300 to 400 μm). Is set to The thickness h of the diffusion layer 36 is not limited to 300 to 400 μm as long as a diffusion effect is obtained, and may be in a range other than this.

  According to the diffusion layer 36 having the above-described configuration, it is possible to suppress a decrease in efficiency due to luminance saturation and temperature quenching. This is because the light (laser light in this embodiment) condensed by the condenser lens 16 is not incident on the wavelength conversion layer 38 (lower surface 38a) but diffused as local light. This is because the light is diffused by the layer 36 and enters the wavelength conversion layer 38 (the lower surface 38a) as diffused light having a substantially uniform luminance distribution.

  As shown in FIG. 3, the wavelength conversion layer 38 includes a lower surface 38a (corresponding to the third surface of the present invention) joined to the upper surface 36b of the diffusion layer 36 and an upper surface 38b (the fourth surface of the present invention) on the opposite side. Equivalent to the surface), and the wavelength of the diffused light from the diffusion layer 36 incident on the lower surface 38a is converted and emitted from the upper surface 38b.

As the wavelength conversion layer 38, for example, a composite (for example, a sintered body) of YAG and alumina Al ₂ O ₃ into which an activator such as cerium Ce is introduced, the outer shape is rectangular and arranged substantially parallel to each other. A plate shape or a layer shape (for example, a rectangle of 0.4 mm × 0.8 mm and a thickness of 80 μm) including the formed lower surface 38 a and upper surface 38 b can be used.

  The diffusion layer 36 and the wavelength conversion layer 38 are fixed (bonded) in a state where the upper surface 36b of the diffusion layer 36 and the lower surface 38a of the wavelength conversion layer 38 are in surface contact. For example, when both the diffusion layer 36 and the wavelength conversion layer 38 are made of ceramic, the diffusion layer 36 (upper surface 36b) and the wavelength conversion layer 38 (lower surface 38a) are the upper surface 36b of the diffusion layer 36 and the wavelength conversion layer. It is fixed (bonded) by curing at a high temperature in a state where the lower surface 38a of the surface 38 is in surface contact. On the other hand, when the wavelength conversion layer 38 is a glass phosphor layer, the diffusion layer 36 (upper surface 36b) and the wavelength conversion layer 38 (lower surface 38a) are the upper surface 36b of the diffusion layer 36 and the lower surface 38a of the wavelength conversion layer 38. Are fixed (joined) by being cured in a state of surface contact.

  The wavelength conversion layer 38 is not limited to the above, and may be, for example, a composite of YAG and a glass binder into which an activator such as cerium Ce is introduced, or may be one using other materials. Good. The thickness of the wavelength conversion layer 38 may be substantially uniform over the entire region, or may be partially different. The lower surface 38a and the upper surface 38b of the wavelength conversion layer 38 may be a flat surface, a curved surface, or a surface including irregularities and / or a curved surface. The outer shape of the lower surface 38a and the upper surface 38b of the wavelength conversion layer 38 may be a circle, an ellipse other than a rectangle, or other shapes.

  The semiconductor light emitting element 14 is a semiconductor light emitting element that emits light that passes through the through hole H and irradiates the light transmissive member 12 (the lower surface 36a of the diffusion layer 36).

  As the semiconductor light emitting element 14, for example, a semiconductor laser element such as a laser diode (LD) having an emission wavelength of blue (about 450 nm) can be used. In the present embodiment, as shown in FIG. 2, the semiconductor light emitting element 14 is packaged to form a can type semiconductor laser light source 14A.

  The semiconductor light emitting element 14 is not limited to a laser diode, and may be a light emitting diode (LED). The emission wavelength of the semiconductor light emitting device 14 is not limited to blue (about 450 nm), and may be, for example, the near ultraviolet region (about 405 nm) or other wavelengths. When the emission wavelength of the semiconductor light emitting element 14 is in the near ultraviolet region (about 405 nm), the wavelength conversion layer 38 is a phosphor of three colors of blue, green, and red, or a phosphor of two colors of blue and yellow. .

  As shown in FIG. 2, the semiconductor laser light source 14 </ b> A is inserted into the cylindrical portion 42 from the lower end opening of the cylindrical portion 42 of the second holder 40, and the step portion between the flange portion 14 </ b> A <b> 1 of the semiconductor laser light source 14 </ b> A and the cylindrical portion 42. 42 a is in contact with the second holder 40.

  The condensing lens 16 is an optical system that condenses the light from the semiconductor light emitting element 14 and locally irradiates the translucent member 12 (the lower surface 36a of the diffusion layer 36), and is held by the second holder 40. The light transmitting member 12 and the semiconductor light emitting element 14 are disposed.

  As shown in FIG. 3, the reflection member 18 is disposed in the recess 30 in a state of being in close contact with at least a part of the bottom surface 30 a of the recess 30 and a part of the side surface 12 a of the translucent member 12.

  As the reflecting member 18, for example, a white resin having elasticity (and / or adhesiveness) and reflectivity, specifically, a binder (white resin) such as a transparent silicone resin containing a light reflecting filler such as titanium oxide. ) Can be used. The concentration of the light reflective filler is preferably more than 10% by weight and less than 50%, more preferably 30 to 40%. In this way, a reflection effect of 95 to 99% is expected for a desired wavelength (400 to 800 nm).

  The white resin (reflective member 18) is in close contact with at least a part of the bottom surface 30a of the recess 30 and a part of the side surface 12a of the translucent member 12 due to its elasticity (and / or adhesiveness). As a result, even if the adhesive or the like that bonds the translucent member 12 (the lower surface 36a of the diffusion layer 36) and the surface 32 (the bottom surface 30a of the recess 30) deteriorates, the translucent member 12 falls off. Can be prevented. This is because the white resin (reflective member 18) having elasticity (and / or adhesiveness) and reflectivity is in close contact with at least a part of the bottom surface 30 a of the recess 30 and a part of the side surface 12 a of the translucent member 12. This is because it functions as a fixing member for fixing the translucent member 12.

  In addition, the light extraction efficiency is improved. This is because the white resin (reflective member 18) having elasticity (and / or adhesiveness) and reflectivity is in close contact with and covers at least a part of the side surface 12a of the translucent member 12. This is because the light emitted from the side surface 12 a of the light-transmitting member 12 is reflected by the white resin (reflecting member 18) and enters the light-transmitting member 12 again. As a result, the light extraction efficiency is improved as compared with the case where the side surface 12a of the translucent member 12 is not covered with the white resin (reflecting member 18).

  The reflection member 18 includes a stress relief portion 18a.

  The stress relief 18a is irradiated with light from the semiconductor light emitting element 14 (laser light in the present embodiment), and the thermal stress (translucent member 12) generated in the reflective member 18 due to thermal expansion and contraction of the reflective member 18. Is applied to the translucent member 12 as a force in the direction of peeling the bottom from the bottom surface 30a of the concave portion 30).

  5A is a top view of the light emitting device 10, and FIG. 5B is a top view of the light emitting device 10 (modified example).

  As the stress relief portion 18a, for example, an annular recess can be used as shown in FIG. As shown in FIG. 3, the concave portion (stress relief portion 18a) may not penetrate the upper surface and the lower surface of the reflecting member 18, or as shown in FIGS. 6 (d) and 7 (c). Alternatively, the reflective member 18 may penetrate through the upper surface and the lower surface.

  Further, the recess (stress relief portion 18a) may be an annular recess centered on the translucent member 12 as shown in FIG. 5 (a), or as shown in FIG. 5 (b). The some recessed part arrange | positioned so that the translucent member 12 may be surrounded may be sufficient.

  The reflection member 18 including the stress relief portion 18a can be formed as follows, for example.

  FIG. 6A to FIG. 6D are diagrams showing a molding process of the reflecting member 18 including the stress relief portion 18a.

  First, as shown in FIG. 6A, the lower surface 36a of the diffusion layer 36 (excluding the region exposed from the through hole H) and the base portion 26 in a state where the lower surface 36a of the diffusion layer 36 covers the through hole H. The translucent member 12 is fixed to the bottom surface 30a of the concave portion 30 of the base portion 26 by bonding the surface 32 (the bottom surface 30a of the concave portion 30).

  Next, as shown in FIG. 6B, a ring R having the same diameter as the recess 30 is inserted into the recess 30.

  Next, in the space S1 (see FIG. 6B) surrounded by the ring inner wall Rc, the bottom surface 30a of the recess 30 and the translucent member 12 (side surface 12a), as shown in FIG. A predetermined amount of white resin (reflective member 18) is filled. The white resin can be filled using, for example, a dispenser. The filling amount of the white resin is such that, for example, an upper surface 18b (for example, a concave surface) due to surface tension is formed between the upper end edge of the ring inner wall Rc and the upper end edge of the side surface 12a of the translucent member 12. In the present embodiment, a ring R having a thickness greater than that of the translucent member 12 is used, and the ring R is inserted into the recess 30 and the upper portion thereof is the upper surface of the translucent member 12 (outgoing light). It protrudes upward from the surface (protrusion amount: about 0.1 mm). As a result, the upper surface 18b due to the surface tension becomes a concave surface whose outer side is higher than the inner side (see FIG. 6C). The surface shape of the upper surface 18b due to the surface tension can be adjusted by adjusting the thickness of the ring R, the white resin filling amount, and the like. For example, by adjusting the thickness of the ring R, the filling amount of the white resin, etc., the upper surface 18b due to the surface tension can be made a reflective surface that controls at least a part of the light emitted from the translucent member 12. . In this way, light distribution control can be performed in the final packaging process.

  Next, after the white resin (reflecting member 18) is cured, the ring R is removed as shown in FIG. Since the ring hole RH of the ring R has a conical shape (for example, a conical shape) whose size decreases from the lower surface Ra side to the upper surface Rb side of the ring R from the viewpoint of securing a draft angle, The ring R can be easily removed.

  As described above, the reflecting member 18 including the stress relief portion 18a (annular recess) can be formed.

  Further, the reflecting member 18 including the stress relief portion 18a can be formed as follows, for example.

  FIG. 7A to FIG. 7C are diagrams showing another molding process (modification example) of the reflecting member 18 including the stress relief portion 18a.

  First, as shown in FIG. 7A, in a state where the lower surface 36a of the diffusion layer 36 covers the through hole H, the lower surface 36a (except for the region exposed from the through hole H) of the diffusion layer 36 and the base portion 26. The translucent member 12 is fixed to the bottom surface 30a of the concave portion 30 of the base portion 26 by bonding the surface 32 (the bottom surface 30a of the concave portion 30).

  Next, as shown in FIG. 7B, a ring-shaped elastic wall body 18A having a smaller diameter than the recess 30 is inserted into the recess 30 (see FIG. 7B). As the ring-shaped elastic wall body 18A, for example, a material obtained by curing a white resin as a ring-shaped wall body (for example, a semi-cured product) can be used.

  Next, in the space S2 (see FIG. 7B) surrounded by the inner wall 18A1 of the ring-shaped elastic wall 18A, the bottom surface 30a of the recess 30 and the translucent member 12 (side surface 12a), FIG. As shown in c), a predetermined amount of white resin (reflective member 18) is filled. The white resin can be filled using, for example, a dispenser. The amount of white resin filled is, for example, that the upper surface 18b (for example, a concave surface) due to surface tension is between the upper end edge of the inner wall 18A1 of the ring-shaped elastic wall 18A and the upper end edge of the side surface 12a of the translucent member 12. It is a degree to be formed. In the present embodiment, a ring-shaped elastic wall body 18A having a thickness larger than that of the translucent member 12 is used, and the elastic wall body 18A is inserted in the recess 30 and its upper portion is translucent. It protrudes upward from the upper surface (outgoing surface) of the conductive member 12 (projection amount: about 0.1 mm). As a result, the upper surface 18b due to the surface tension becomes a concave surface whose outer side is higher than the inner side (see FIG. 7C). The surface shape of the upper surface 18b due to the surface tension can be adjusted by adjusting the thickness of the ring-shaped elastic wall 18A, the filling amount of the white resin, and the like. For example, by adjusting the thickness of the ring-shaped elastic wall 18A, the filling amount of the white resin, and the like, the upper surface 18b due to the surface tension is controlled to reflect at least part of the light emitted from the translucent member 12. It can be.

  Next, the operation of the stress relief portion 18a will be described.

  FIG. 8A shows the stress (generated in the reflecting member 18) generated by irradiation with light (laser light in this embodiment) from the semiconductor light emitting element 14 when the stress relief portion 18 a is not formed. The contour diagram of the thermal stress and the stress generated around the reflecting member 18 by the thermal stress is shown. FIG. 8B shows the stress generated by irradiating the laser light from the semiconductor light emitting element 14 when the stress relief portion 18a is formed (the thermal stress generated in the reflecting member 18 and the thermal stress). A contour diagram of (stress generated around the reflecting member 18) is shown.

  The white color in FIGS. 8A and 8B indicates that the stress is relatively high, and black color indicates that the stress is relatively low.

  When comparing FIG. 8A and FIG. 8B, the direction in which the stress relief portion 18a is formed (see FIG. 8B) is more black in the contour diagram, and the translucent member 12 and the recess 30 It can be seen that the stress generated around is greatly reduced.

  As described above, by forming the stress relief portion 18a, the stress generated around the translucent member 12 and the concave portion 30 can be greatly reduced, so that the white resin (reflecting member 18) is thermally expanded and contracted. Even if it repeats, it becomes possible to suppress that the translucent member 12 is damaged or damaged.

  9A is an enlarged partial cross-sectional view in the vicinity of the recess 30 in FIG. 8A, and FIG. 9B is a Mises stress obtained by line analysis of the bottom surface 30a (wavy line) of the recess 30 shown in FIG. 9A. The values are plotted in a coordinate system in which the vertical axis represents Mises' equivalent stress value [Pa] and the horizontal axis represents the distance [mm] from the center of the bottom surface 30a. Symbols M01 and M02 in FIG. 9B represent Mises stress values at both ends of the bottom surface (the lower surface 36a of the diffusion layer 36) of the translucent member 12 shown in FIG. 9A. This acts on the translucent member 12 as a force in the direction of peeling the translucent member 12 from the bottom surface 30 a of the recess 30.

  10A is an enlarged partial cross-sectional view in the vicinity of the recess 30 in FIG. 8B, and FIG. 10B is a Mises stress obtained by line analysis of the bottom surface 30a (wavy line) of the recess 30 shown in FIG. 10A. The values are plotted in a coordinate system in which the vertical axis represents Mises' equivalent stress value [Pa] and the horizontal axis represents the distance [mm] from the center of the bottom surface 30a. Symbols M03 and M04 in FIG. 10B represent Mises stress values at both ends of the bottom surface (the lower surface 36a of the diffusion layer 36) of the translucent member 12 shown in FIG. This acts on the translucent member 12 as a force in the direction of peeling the translucent member 12 from the bottom surface 30 a of the recess 30.

  9 (b) and FIG. 10 (b) are compared, the direction in which the stress relief portion 18a is formed (see FIG. 10 (b)) is such that the translucent member 12 is peeled from the bottom surface 30a of the recess 30. It can be seen that the stress acting as a force is small (M03, M04 <M01, M02) (about 1/10).

  As described above, by forming the stress relief portion 18a, the force in the direction of peeling the translucent member 12 from the bottom surface 30a of the concave portion 30 is greatly reduced, so that the white resin (reflecting member 18) is thermally expanded and contracted. Even if it repeats, it becomes possible to suppress that the translucent member 12 falls.

  As shown in FIG. 2, the second holder 40 is made of a metal such as stainless steel, and is provided on a cylindrical cylindrical portion 42, an upper flange portion 44 provided on the upper outer periphery of the cylindrical portion 42, and a lower outer periphery of the cylindrical portion 42. A lower flange portion 46 and the like.

  The first holder 22 has a cylindrical portion 24 inserted into the cylindrical portion 42 from the upper end opening of the cylindrical portion 42 of the second holder 40, and the flange portion 28 of the first holder 22 and the cylindrical portion 42 of the second holder 40. It is being fixed to the 2nd holder 40 in the state which contacted the upper end surface of.

  In the light emitting device 10 having the above configuration, the light from the semiconductor light emitting element 14 is collected by the condenser lens 16, passes through the through hole H, and is disposed at a position away from the semiconductor light emitting element 14. 12 (the lower surface 36a of the diffusion layer 36) is irradiated locally (spotwise). The spot size is adjusted, for example, to an elliptical shape having a long side of about 100 μm and a short side of about 20-30 μm. Light that irradiates the translucent member 12 (the lower surface 36a of the diffusion layer 36) locally (spotwise) is diffused inside the diffusion layer 36, and the luminance distribution is uniform (or substantially uniform) from the upper surface 36b of the diffusion layer 36. ) And is incident on the lower surface 38 a of the wavelength conversion layer 38.

  The wavelength conversion layer 38 on which the diffused light from the diffusion layer 36 is incident is based on a color mixture of the diffused light from the diffused layer 36 that transmits the light and the light (emission) that is excited and emitted by the diffused light from the diffused layer 36. Emits white light.

  As described above, according to the light emitting device 10 of the present embodiment, the following advantages are produced.

  First, it becomes possible to prevent the translucent member 12 from falling off. This is because the white resin (reflective member 18) having elasticity (and / or adhesiveness) and reflectivity is in close contact with at least a part of the bottom surface 30 a of the recess 30 and a part of the side surface 12 a of the translucent member 12. This is because it functions as a fixing member for fixing the translucent member 12.

  Secondly, even if the white resin (reflecting member 18) as a fixing member for fixing the translucent member 12 repeatedly undergoes thermal expansion and contraction, the translucent member 12 can be prevented from being damaged or damaged. Become. This is because the thermal stress generated in the white resin (reflecting member 18) as a fixing member for fixing the translucent member 12 is reduced by the action of the stress relief portion 18a.

  Third, the light extraction efficiency is improved. This is because the white resin (reflective member 18) having elasticity (and / or adhesiveness) and reflectivity is in close contact with and covers at least a part of the side surface 12a of the translucent member 12. This is because the light emitted from the side surface 12 a of the light-transmitting member 12 is reflected by the white resin (reflecting member 18) and enters the light-transmitting member 12 again. As a result, the light extraction efficiency is improved as compared with the case where the side surface 12a of the translucent member 12 is not covered with the white resin (reflecting member 18).

  Next, a modified example will be described.

  FIG. 11 is a longitudinal sectional view of a light emitting device 10 (modified example) using the light guide 48.

  In the above embodiment, the condensing lens 16 (see FIG. 2) is used as an optical system that condenses the light from the semiconductor light emitting element 14 and locally irradiates the translucent member 12 (the lower surface 36a of the diffusion layer 36). However, the present invention is not limited to this.

  For example, FIG. 11 shows an optical system that condenses light from the semiconductor light emitting element 14 and locally irradiates the translucent member 12 (the lower surface 36a of the diffusion layer 36) instead of the condensing lens 16. As described above, the condensing lens 16 that condenses the light from the semiconductor light-emitting element 14, and the light from the semiconductor light-emitting element 14 that is condensed by the condensing lens 16 is guided to the translucent member 12 (diffusion layer). An optical system including a light guide 48 for locally irradiating the lower surface 36a) of 36 may be used.

  The light guide 48 is, for example, an optical fiber including a central core (for example, core diameter: 0.2 mm) and a cladding (none of which is shown) covering the periphery thereof. The core has a higher refractive index than the clad. Therefore, the laser light introduced into the light guide 48 from the one end surface 48a of the light guide 48 (laser light from the semiconductor light emitting element 14 collected by the condenser lens 16) is totally reflected at the boundary between the core and the clad. The light-transmitting member is guided to the other end surface 48b of the light guide 48 in a state of being confined inside the core by using the light, is emitted from the other end surface 48b, and is disposed at a position separated from the semiconductor light emitting element 14. 12 (the lower surface 36a of the diffusion layer 36) is locally irradiated.

  The light that irradiates the lower surface 36a of the diffusion layer 36 locally (spotwise) is diffused inside the diffusion layer 36 and emitted from the upper surface 36b of the diffusion layer 36 as diffused light having a uniform (or substantially uniform) luminance distribution. Then, the light enters the lower surface 38 a of the wavelength conversion layer 38.

  The wavelength conversion layer 38 on which the diffused light from the diffusion layer 36 is incident is based on a color mixture of the diffused light from the diffused layer 36 that transmits the light and the light (emission) that is excited and emitted by the diffused light from the diffused layer 36. Emits white light.

  The light emitting device 10 of the present modification can also achieve the same effect as that of the above embodiment.

  Next, an example of a vehicle lamp (for example, a vehicle headlamp) using the light emitting device 10 having the above-described configuration will be described.

  FIG. 12 shows a so-called direct projection type (also referred to as a direct projection type) vehicle using a projection lens 52 as an optical system configured to control light from the light emitting device 10 and irradiate the front of the vehicle. It is an example of the lamp 50. The projection lens 52 and the light emitting device 10 disposed behind the projection lens 52 are held by a holder 54 so as to have a predetermined positional relationship.

  FIG. 13 shows a so-called projector-type vehicular lamp 60 that uses a reflecting surface 62, a shade 64, and a projection lens 66 as an optical system configured to control the light from the light emitting device 10 and irradiate the front of the vehicle. It is an example. The reflection surface 62, the shade 64, the projection lens 66, and the light emitting device 10 are held by a holder 68 so as to have a predetermined positional relationship.

  In addition, the light-emitting device 10 can be used as, for example, a projector, an indoor illumination, an outdoor illumination, or a light source for a projector other than a vehicle lamp (for example, a vehicle headlamp).

  The above embodiment is merely an example in all respects. The present invention is not construed as being limited to these descriptions. The present invention can be implemented in various other forms without departing from the spirit or main features thereof.

  DESCRIPTION OF SYMBOLS 10 ... Light-emitting device, 12 ... Translucent member, 12a ... Side surface, 14 ... Semiconductor light-emitting element, 14A ... Semiconductor laser light source, 14A1 ... Flange part, 16 ... Condensing lens, 18 ... Reflective member, 18A ... Elastic wall body, 18A1 ... inner wall, 18a ... stress relief part, 18b ... upper surface, 22 ... first holder, 24 ... cylinder part, 26 ... base part, 28 ... flange part, 30 ... recess, 30a ... bottom face, 30b ... inner wall, 32 ... surface 34 ... Back surface, 36 ... Diffusion layer, 36a ... Lower surface, 36b ... Upper surface, 38 ... Wavelength conversion layer, 38a ... Lower surface, 38b ... Upper surface, 40 ... Second holder, 42 ... Tube portion, 42a ... Step portion, 44 ... Upper flange portion, 46 ... lower flange portion, 48 ... light guide, 48a ... one end surface, 48b ... other end surface, 50 ... vehicle lamp, 52 ... projection lens, 54 ... holder, 60 ... vehicle lamp, 62 ... reflecting surface 64 ... Edo, 66 ... projection lens 68 ... holder

Claims (7)

A base portion including a surface including a recess, a back surface on the opposite side, and a through hole penetrating the bottom surface of the recess and the back surface;
A translucent member fixed to the bottom surface of the recess in a state of covering the through hole;
A semiconductor light emitting element that emits light that passes through the through-hole and irradiates the translucent member;
An optical system for condensing light from the semiconductor light emitting element and locally irradiating the translucent member;
A reflective member disposed in the recess, in a state of being in close contact with at least a part of the bottom surface of the recess and a part of the side surface of the translucent member,
The translucent member is configured to include a wavelength conversion layer,
The reflecting member has Nde contains a resin having elasticity and reflective stress relief portion,
The stress relief portion is an annular recess centered on the translucent member or a plurality of recesses arranged so as to surround the translucent member,
The material of the base part is metal,
The material of the translucent member includes ceramic or ceramic and glass . The light emitting device according to claim 1, wherein the reflecting member has a cone shape . The light emitting device according to claim 1 , wherein the reflecting member is white resin. The translucent member is a wavelength conversion member including said wavelength conversion layer and the diffusion layer,
The diffusion layer includes a first surface fixed to the surface in a state of covering the through-hole and a second surface opposite to the first surface, and the diffusion layer irradiates the first surface from the semiconductor light emitting element. A layer that diffuses light and emits diffused light from the second surface;
The wavelength conversion layer includes a third surface bonded to the second surface and a fourth surface opposite to the third surface, wavelength-converts the diffused light incident on the third surface, and The light emitting device according to claim 1, wherein the light emitting device is a layer that emits light from the fourth surface.   5. The light emitting device according to claim 4, wherein the thickness of the diffusion layer is set to a thickness at which a luminance distribution of diffused light emitted from the second surface is substantially uniform. A light emitting device according to any one of claims 1 to 5;
An automotive lamp comprising: an optical system configured to control light from the light emitting device to irradiate the front of the vehicle. In a state where the through hole is covered on the bottom surface of the concave portion of the metal base portion including the front surface including the concave portion, the back surface on the opposite side, and the through hole penetrating the bottom surface and the back surface of the concave portion. Fixing a translucent member containing ceramic or ceramic and glass ;
Inserting a ring having substantially the same diameter as the recess into the recess;
Filling a white resin having viscosity and reflectivity into a space surrounded by the inner wall of the ring, the bottom surface of the recess, and the side surface of the translucent member;
Forming a stress relief portion in a space surrounded by a side surface of the cured white resin, a bottom surface of the recess, and an inner wall of the recess by removing the ring after the white resin is cured;
A stress relief molding method characterized by comprising: