JP6132620B2 - Magnetic sensor device - Google Patents

Description

  The present invention relates to a magnetic sensor device in which a magnet and a magnetic sensor are arranged to face each other.

  In a magnetic sensor device used as a rotary encoder or the like, a magnet provided on the rotating body side and a magnetic sensor provided on the fixed body side face each other, and a signal output from the magnetic sensor as the magnet rotates. Based on the above, the signal processing circuit detects the rotational angle position, rotational speed, etc. of the rotating body. At that time, if an induced voltage is generated due to a magnetic flux change in the wiring output from the magnetic sensor to the signal processing circuit, the detection accuracy is lowered. In view of this, a configuration has been proposed in which a flexible wire conducting wire connecting a magnetic sensor made of a Hall element and a signal processing circuit is arranged in the vicinity of the rotation center axis of the magnet (see Patent Document 1). In addition, a configuration has been proposed in which a wiring pattern for connecting a magnetic sensor composed of a Hall element and a signal processing circuit is arranged concentrically around the rotation center axis of the magnet (see Patent Document 2).

JP 2007-218592 A JP 2011-33595 A

  However, in the configurations described in Patent Documents 1 and 2, there is a space for arranging flexible wiring around the magnet under predetermined conditions, and a space for providing a substrate having a concentric wiring pattern around the rotation center axis of the magnet. There is a problem that it is necessary.

  In view of the above problems, an object of the present invention is to reduce the influence of inductive noise generated in the transmission path of the output from the magnetic sensor without securing a large space around the magnet. It is to provide a sensor device.

In order to solve the above problems, a magnetic sensor device according to the present invention includes a magnet provided on the rotating body side and provided with an N pole and an S pole around the rotation center axis, and a feeling of facing the magnet on the fixed body side. A magnetic sensor; a semiconductor device including an amplifier that amplifies an output signal from the magnetic sensor; a double-sided substrate on which the magnetic sensor is mounted on one side and the semiconductor device is mounted on the other side; The magnetic sensor and the semiconductor device are arranged at positions where at least a part thereof overlaps in the thickness direction of the double-sided board, and the magnetic sensor and the semiconductor device are arranged on the double-sided board. are electrically connected via a plurality of through holes formed at a position overlapping in the thickness direction of the double-sided substrate to at least one of the magnetism-sensitive sensor and the semiconductor device, the magnetism-sensitive sensor Is provided on the rotation center axis of the magnet, and the double-sided board is disposed with the thickness direction directed toward the rotation center axis of the magnet. A first land for a magnetic sensor, to which the first output terminal is electrically connected, and a second output terminal paired with the first output terminal in the magnetic sensor on the one surface side are electrically connected. In the direction in which a virtual line connecting the second land for magnetic sensor extends, the other surface with respect to the first land for semiconductor device electrically connected to the first land for magnetic sensor on the other surface side. Side electrically connected to the second land for magnetic sensor
The direction in which the second land for the conductor device is located is opposite to the direction in which the second land for the magnetic sensor is located with respect to the first land for the magnetic sensor .

  In the present invention, a double-sided substrate having a magnetic sensor mounted on one side and a semiconductor device mounted on the other side is used. The magnetic sensor and the semiconductor device are electrically connected through a through-hole in the double-sided substrate. It is connected. For this reason, it is not necessary to secure a large space around the magnet. In addition, the magnetic sensor and the semiconductor device are arranged at a position where at least a part thereof overlaps in the thickness direction of the double-sided board, and the through hole is formed at a position where it overlaps at least one of the magnetic sensor and the semiconductor device. ing. Therefore, since the transmission path of the output from the magnetic sensor is short, the induction noise generated in the transmission path of the output from the magnetic sensor is small, and the influence of the induction noise can be reduced.

In the present invention, the magnetic sensor is provided on the rotation center axis of the magnet, and the double-sided board is disposed with the thickness direction directed toward the rotation center axis of the magnet . For this reason, the amount of inductive noise generated in the transmission path of the output from the magnetic sensor is small because the loop of the wiring formed on the double-sided substrate is less linked to the magnetic flux. Furthermore, in the present invention, in the direction in which the imaginary line connecting the first land for the magnetic sensor and the second land for the magnetic sensor extends, the second for the semiconductor device with respect to the first land for the semiconductor device. The direction in which the two lands are located is opposite to the direction in which the second lands for magnetic sensor are located with respect to the first lands for magnetic sensor. For this reason, the direction of the loop from the magnetic sensor to the semiconductor device can be reversed in the middle only by changing the configuration of the circuit board. Therefore, the polarity of the induced voltage can be reversed in the middle to cancel each other, so that the influence of the induced noise can be mitigated. In the present invention, “pairing” in the “second output terminal paired with the first output terminal” refers to a signal output from the first output terminal and a signal output from the second output terminal. This means that one signal is generated. For example, a relationship between a first output terminal that outputs a + A phase signal and a second output terminal that outputs a -A phase signal, and a first output terminal that outputs a + B phase signal. It means the relationship between one output terminal and a second output terminal that outputs a -B phase signal.

  In the present invention, it is preferable that the center of the magnetic sensor and the center of the semiconductor device are located on the rotation center axis. According to such a configuration, the transmission path of the output from the magnetic sensor can be arranged in the vicinity of the rotation center axis, so that induction noise can be reduced.

  In the present invention, the magnet may adopt a configuration in which the magnet is magnetized to an NS single pole pair.

  In the present invention, it is preferable that the plurality of through holes are formed at positions overlapping with both the magnetic sensor and the semiconductor device in a thickness direction of the double-sided substrate. According to such a configuration, since the transmission path of the output from the magnetic sensor is short, the induction noise generated in the transmission path of the output from the magnetic sensor is small, and the influence of the induction noise can be mitigated.

In the present invention, in the magnetic sensor, a magnetic sensor side first wiring between the magnetic sensor side chip on which the magnetic film is formed and the first output terminal, the magnetic sensor side chip, and the second. A first induced voltage generated by the second wiring on the magnetic sensor side between the output terminal and the magnetic flux of the magnet,
Of the plurality of through holes, a second induced voltage generated when a first through hole corresponding to the first output terminal and a second through hole corresponding to the second output terminal are linked to the magnetic flux of the magnet. ,
In the semiconductor device, the amplifier-side first wiring between the amplifier-side chip in which the amplifier unit is formed and the first input terminal electrically connected to the first output terminal, and the amplifier-side chip and the first The third induced voltage generated when the amplifier-side second wiring between the second input terminal electrically connected to the two output terminals is linked to the magnetic flux of the magnet,
It is preferable that any one of the induced voltages and the other two induced voltages cancel each other. According to such a configuration, the induced voltages cancel each other, so that the influence of induced noise can be reduced.

  In the present invention, the first through hole and the second through hole with respect to a virtual line connecting the first land for a semiconductor device and the second land for a semiconductor device when viewed from the direction of the rotation center axis. A structure in which at least one virtual line of the connecting virtual line and the virtual line connecting the first land for the magnetic sensor and the second land for the magnetic sensor extends in parallel, or the magnetic sensor A virtual line connecting the first through hole and the second through hole to a virtual line connecting the first land for sensor and the second land for magnetic sensor, and the first land for semiconductor device and the It is preferable that at least one of the imaginary lines connecting the second lands for semiconductor devices has a structure extending in parallel. According to this configuration, the phases of at least two of the first induced voltage, the second induced voltage, and the third induced voltage can be matched, which is suitable for canceling the induced voltages with each other.

  In the present invention, the magnetic sensor can employ a configuration that outputs a two-phase signal having a phase difference of 90 ° as the magnet rotates.

  In the present invention, a double-sided substrate having a magnetic sensor mounted on one side and a semiconductor device mounted on the other side is used. The magnetic sensor and the semiconductor device are electrically connected through a through-hole in the double-sided substrate. It is connected. For this reason, it is not necessary to secure a large space around the magnet. In addition, the magnetic sensor and the semiconductor device are arranged at a position where at least a part thereof overlaps in the thickness direction of the double-sided board, and the through hole is formed at a position where it overlaps at least one of the magnetic sensor and the semiconductor device. ing. Therefore, since the transmission path of the output from the magnetic sensor is short, the induction noise generated in the transmission path of the output from the magnetic sensor is small, and the influence of the induction noise can be reduced.

It is explanatory drawing which shows the structure of the magnetic sensor apparatus (rotary encoder) to which this invention is applied. It is explanatory drawing which shows the electrical structure of the magnetic sensor apparatus to which this invention is applied. It is explanatory drawing which shows the detection principle of the magnetic sensor apparatus to which this invention is applied. It is explanatory drawing of the signal path | route from the magnetic sensor to the amplifier part in the magnetic sensor apparatus to which this invention is applied. It is explanatory drawing which shows the structure for negating an induced voltage effectively in the sensor apparatus to which this invention is applied.

  A sensor device to which the present invention is applied will be described below with reference to the drawings.

  FIG. 1 is an explanatory diagram showing a configuration of a magnetic sensor device 10 (rotary encoder) to which the present invention is applied. FIG. 2 is an explanatory diagram showing an electrical configuration of the magnetic sensor device to which the present invention is applied. FIG. 3 is an explanatory diagram showing the detection principle of the magnetic sensor device 10 to which the present invention is applied. FIGS. 3 (a), (b), (c), and (d) are diagrams of a magnetosensitive film for A phase. An explanatory diagram showing an electrical connection structure, an explanatory diagram showing an electrical connection structure of a B-phase magnetosensitive film, an explanatory diagram of a signal output from the magnetosensitive sensor 4, and an angle between the signal and the rotating body 2 It is explanatory drawing which shows the relationship with a position (electrical angle).

  A sensor device 10 shown in FIG. 1 is a device that magnetically detects rotation around an axis of a rotating body 2 (around a rotation center axis L) relative to a fixed body (not shown), and the fixed body is a frame of a motor device. The rotating body 2 is used in a state where it is connected to a rotation output shaft or the like of the motor device. On the rotating body 2 side, a magnet 20 is held that directs the magnetized surface 21 in which the N pole and the S pole are magnetized one by one in the circumferential direction to one side in the rotation center axis L direction. Rotates about the rotation center axis L integrally with the rotating body 2.

  As shown in FIGS. 1 and 2, on the fixed body side, a magnetic sensor 4 that faces the magnetized surface 21 of the magnet 20 on one side in the direction of the rotation center axis L, and a magnetic sensor 4 An amplifier section 90 (amplifier section 90 (+ A), amplifier section 90 (-A), amplifier section 90 (+ B), amplifier section 90 (-B)) for amplifying the output is provided in the chip 97 (amplifier side chip). A semiconductor device 9 (amplifier IC) is provided. In this embodiment, for the semiconductor device 9, the output from the amplifier unit 90 (amplifier units 90 (+ A), 90 (−A), 90 (+ B), 90 (−B)) is A / D converted. A signal processing unit 99 that detects the rotational angle position, rotational speed, and the like of the rotating body 2 based on the signal after A / D conversion is provided. The signal processing unit 99 may be built in the semiconductor device 9. In addition, the magnetic sensor device 10 includes a first hall element 61 and a second hall element 62 located at a position that is shifted by 90 ° in the circumferential direction with respect to the first hall element 61 at a position facing the magnet 20. The amplifier unit 95 for the first Hall element 61 and the amplifier unit 96 for the second Hall element 62 are provided inside the semiconductor device 9 or outside the semiconductor device 9.

  The magnetic sensor 4 is configured as a sensor IC, and a two-phase sensor having a phase difference of 90 ° with respect to the phases of the element substrate 45 and the magnet 20 in the chip 40 (magnetic sensor side chip). The magnetoresistive element includes a magnetic film (A phase (SIN) magnetic sensitive film and B phase (COS) magnetic sensitive film). In the magnetic sensor 4, the A phase magnetosensitive film includes a + A phase (SIN +) magnetosensitive film 43 that detects movement of the rotating body 2 with a phase difference of 180 °, and a −A phase (SIN−) sensitivity. The B-phase magnetosensitive film includes a + B-phase (COS +) magnetosensitive film 44 that detects movement of the rotating body 2 with a phase difference of 180 °, and a -B-phase (COS-) magnetosensitive film 41. A magnetosensitive film 42 is provided.

  The + A phase magnetosensitive film 43 and the -A phase magnetosensitive film 41 constitute the bridge circuit shown in FIG. 3A, one end of which is connected to the power supply terminal 48 (Vcc) and the other end is grounded. It is connected to the terminal 48 (GND). An output terminal 48 (+ A) from which the + A phase is output is provided at the midpoint position of the + A phase magnetosensitive film 43, and the −A phase is output at the midpoint position of the −A phase magnetosensitive film 41. The output terminal 48 (-A) is provided. Similarly to the + A-phase sensitive film 44 and the -A-phase sensitive film 41, the + B-phase sensitive film 44 and the -B-phase sensitive film 42 also constitute the bridge circuit shown in FIG. One end is connected to the power supply terminal 48 (Vcc), and the other end is connected to the ground terminal 48 (GND). An output terminal 48 (+ B) from which a + B phase is output is provided at the midpoint position of the + B phase magnetosensitive film 44, and a −B phase is output at the midpoint position of the −B phase magnetosensitive film 42. The output terminal 48 (-B) is provided.

As shown in FIG. 1, the magnetic sensor 4 having such a configuration is disposed on the rotation center axis L of the magnet 20 and faces the magnetization boundary portion of the magnet 20 in the rotation axis direction L. For this reason, the magnetic sensitive films 41 to 44 of the magnetic sensitive sensor 4 are rotated such that the direction of the magnetic sensitive films 41 to 44 changes in the in-plane direction of the magnetized surface 21 with a magnetic field strength equal to or higher than the saturation sensitivity region of the resistance values of the magnetic sensitive films 41 to 44. A magnetic field can be detected. That is, a rotating magnetic field whose direction in the in-plane direction changes with a magnetic field strength equal to or higher than the saturation sensitivity region of the resistance value of each of the magnetic sensitive films 41 to 44 is generated at the magnetization boundary line portion. Here, the saturation sensitivity region generally refers to a region other than the region in which the resistance value change amount k can be approximately expressed by the magnetic field strength H and the expression “k∝H ² ”. The principle of detecting the direction of the rotating magnetic field (rotation of the magnetic vector) with a magnetic field strength equal to or higher than the saturation sensitivity region is that a magnetic field strength that saturates the resistance value is applied while the magnetic sensitive films 41 to 44 are energized. When the angle θ formed by the magnetic field and the current direction and the resistance value R of the magnetosensitive films 41 to 44 are expressed by the following formula: R = R0−k × sin2θ
R0: resistance value in a non-magnetic field k: resistance value change (a constant when the saturation sensitivity region is exceeded)
The fact that there is a relationship indicated by is used. If the rotating magnetic field is detected based on such a principle, the resistance value R changes along the sine wave when the angle θ changes, so that an A-phase output and a B-phase output with high waveform quality can be obtained.

  In the magnetic sensor device 10 of the present embodiment, a signal processing unit 99 that performs signal processing for performing interpolation processing and various arithmetic processing on the sine wave signals sin and cos output from the magnetic sensor 4 is provided. 4. Based on the outputs from the first Hall element 61 and the second Hall element 62, the rotational angle position of the rotating body 2 with respect to the fixed body is obtained.

More specifically, in the rotary encoder, when the rotating body 2 makes one rotation, the sine wave signals sin and cos shown in FIG. 3C are output for two cycles from the magnetic sensor 4 (magnetoresistance element). The Therefore, after the sine wave signals sin and cos are amplified by the amplifier unit 90 (amplifier units 90 (+ A), 90 (−A), 90 (+ B), and 90 (−B)), the signal processing unit 99 performs FIG. If the Lissajous diagram shown in (d) is obtained and θ = tan ⁻¹ (sin / cos) is obtained from the sine wave signals sin and cos, the angular position θ of the rotation output shaft can be obtained. In the present embodiment, the first Hall element 61 and the second Hall element 62 are arranged at a position shifted by 90 ° from the center of the magnet 20. For this reason, it can be understood from the combination of the outputs of the first Hall element 61 and the second Hall element 62 which section of the sine wave signal sin or cos the current position is located. Therefore, the rotary encoder generates absolute angular position information of the rotating body 2 based on the detection result of the magnetic sensor 4, the detection result of the first Hall element 61, and the detection result of the second Hall element 62. The absolute operation can be performed.

(Configuration of signal path from magnetic sensor 4 to amplifier 90)
FIG. 4 is an explanatory diagram of a signal path from the magnetic sensor 4 to the amplifier unit 90 in the magnetic sensor device 10 to which the present invention is applied. FIGS. 4 (a) and 4 (b) show the double-sided board 5 (circuit board). FIG. 6 is an explanatory view showing a mounting structure of the magnetic sensor 4 and the semiconductor device 9 and a wiring pattern of a double-sided substrate 5 (circuit board). FIG. 4B shows only the wiring pattern related to the present invention among the wiring patterns. In FIG. 4B, the wiring pattern formed on one surface 501 of the double-sided substrate 5 is indicated by a solid line, and the wiring pattern formed on the other surface 502 of the double-sided substrate 5 is indicated by a one-dot chain line. In FIG. 4B, the magnetic sensor 4 is indicated by a dotted line, and the semiconductor device 9 is indicated by a two-dot chain line.

  2 and 4A, in the magnetic sensor device 1 of the present embodiment, the magnetic sensor 4 includes a chip 40 and a plurality of output terminals 48 (+ A) electrically connected to the chip 40. 48 (-A), 48 (+ B), 48 (-B), and the chip 40 and the output terminals 48 (+ A), 48 (-A), 48 (+ B), 48 (-B) The magnetic sensor side wiring 47 (+ A), 47 (−A), 47 (+ B), and 47 (−B) are electrically connected.

In the magnetic sensor 4 having such a configuration, the “first output terminal”, “second output terminal”, “magnetic sensor side first wiring”, and “magnetic sensor side second wiring” in the present invention are as follows. Corresponding to
First output terminal of magnetic sensor 4 for A phase = output terminal 48 (+ A)
Second output terminal of magnetic sensor 4 = output terminal 48 (−A)
Magnetic sensor side first wiring = Magnetic sensor side wiring 47 (+ A)
Magnetic sensor side second wiring = Magnetic sensor side wiring 47 (-A)
First output terminal of magnetic sensor 4 for B phase = output terminal 48 (+ B)
Second output terminal of magnetic sensor 4 = output terminal 48 (−B)
Magnetic sensor side first wiring = Magnetic sensor side wiring 47 (+ B)
Magnetic sensor side second wiring = Magnetic sensor side wiring 47 (-B)

  The semiconductor device 9 is electrically connected to the chip 97 including the amplifier unit 90 (amplifier units 90 (+ A), 90 (−A), 90 (+ B), and 90 (−B)), and the chip 97. A plurality of input terminals 98 (+ A), 98 (-A), 98 (+ B), 98 (-B), and a chip 97 and input terminals 98 (+ A), 98 (-A), 98 ( + B) and 98 (−B) are electrically connected by amplifier side wirings 93 (+ A), 93 (−A), 93 (+ B), and 93 (−B).

In the semiconductor device 9 having such a configuration, “first input terminal”, “second input terminal”, “amplifier side first wiring”, and “amplifier side second wiring” in the present invention correspond as follows.
First input terminal of semiconductor device 9 for phase A = input terminal 98 (+ A)
Second input terminal of semiconductor device 9 = input terminal 98 (−A)
Amplifier side first wiring = Amplifier side wiring 93 (+ A)
Amplifier side second wiring = Amplifier side wiring 93 (-A)
First input terminal of semiconductor device 9 for B phase = input terminal 98 (+ B)
Second input terminal of semiconductor device 9 = input terminal 98 (−B)
Amplifier side first wiring = Amplifier side wiring 93 (+ B)
Amplifier side second wiring = Amplifier side wiring 93 (-B)

  In this embodiment, the double-sided substrate 5 is used to electrically connect the magnetic sensor 4 and the semiconductor device 9. Specifically, the magnetic sensor 4 is mounted on one side 501 side of the double-sided substrate 5, and the semiconductor device 9 is mounted on the other side 502 side. The double-sided substrate 5 has a thickness direction (indicated by an arrow T). (Direction shown) is directed in the direction of the rotation center axis L of the magnet 20.

  The magnetic sensor 4 and the semiconductor device 9 are arranged at positions where at least a part thereof overlaps in the thickness direction of the double-sided substrate 5. In addition, the magnetic sensor 4 and the semiconductor device 9 are arranged so as to be located inside an area in which one of them is projected in parallel in the thickness direction of the double-sided substrate 5. In this embodiment, the planar size of the semiconductor device 9 is larger than the planar size of the magnetic sensor 4, and the magnetic sensor 4 is positioned inside the region obtained by projecting the semiconductor device 9 in parallel in the thickness direction of the double-sided substrate 5. Are arranged to be. Note that the plane size of the magnetic sensor 4 may be larger than the plane size of the semiconductor device 9. In this case, the semiconductor device 9 has a region projected in parallel with the thickness direction of the double-sided substrate 5. It will be placed inside. Here, the double-sided substrate 5 is disposed so that the center of the magnetic sensor 4 (chip 40) and the center of the semiconductor device 9 (chip 97) are located on the rotation center axis L.

  In the sensor device 10 configured as described above, the magnetic sensor 4 and the semiconductor device 9 are electrically connected via a plurality of through holes 50 formed in the double-sided substrate 5. The plurality of through holes 50 are formed at positions that overlap at least one of the magnetic sensor 4 and the semiconductor device 9 in the thickness direction of the double-sided substrate 5. In the present embodiment, the plurality of through holes 50 are formed at positions where the magnetic sensor 4 and the double-sided substrate 5 overlap in the thickness direction. For this reason, the plurality of through holes 50 are formed at positions that overlap both the magnetic sensor 4 and the semiconductor device 9 in the thickness direction of the double-sided substrate 5.

(Detailed configuration of double-sided substrate 5)
Hereinafter, with reference to FIG. 2 and FIGS. 4A and 4B, lands and wirings of the double-sided substrate 5 will be described. In the double-sided substrate 5, a plurality of lands 51 on which the magnetic sensor 4 is mounted and a plurality of wirings 52 extending from the lands 51 are formed on one surface 501 of a substrate body such as a phenol substrate or a glass-epoxy substrate. A through hole 50 is formed at the tip of each of the plurality of wirings 52.

  In the present embodiment, the power supply terminal land 51 (Vcc) on which the power supply terminal 48 (Vcc) of the magnetic sensor 4 is mounted and the ground terminal 48 (GND) of the magnetic sensor 4 are mounted on the plurality of lands 51. And a land 51 (GND) for the ground terminal. In addition, a land 51 (+ A) for + A phase on which the output terminal 48 (+ A) of the magnetic sensor 4 is mounted and an output terminal 48 (−A) of the magnetic sensor 4 are mounted on the plurality of lands 51. The -A phase land 51 (-A), the + B phase land 51 (+ B) on which the magnetic sensor 4 output terminal 48 (+ B) is mounted, and the magnetic sensor 4 output terminal 48 (- -B phase land 51 (-B) on which B) is mounted.

  The plurality of wirings 52 are electrically connected to a power supply terminal wiring 52 (Vcc) to which a power supply terminal 48 (Vcc) of the magnetic sensor 4 is electrically connected and a ground terminal 48 (GND) of the magnetic sensor 4. And a ground terminal wiring 52 (GND) connected to the terminal. The plurality of wirings 52 are electrically connected to the output terminal 48 (+ A) of the magnetic sensor 4 for the + A phase 52 (+ A) and the output terminal 48 (−A) of the magnetic sensor 4. Are electrically connected to the -A phase wiring 52 (-A), the + B phase wiring 52 (+ B) to which the output terminal 48 (+ B) of the magnetic sensor 4 is electrically connected, A wire 52 (-B) for -B phase to which the output terminal 48 (-B) of the magnetic sensor 4 is electrically connected is included.

  The plurality of through holes 50 include a through hole 50 (Vcc) for a power supply terminal to which a power supply terminal 48 (Vcc) of the magnetic sensor 4 is electrically connected, and a ground terminal 48 (GND) of the magnetic sensor 4. And a through hole 50 (GND) for a ground terminal to be electrically connected. The plurality of through holes 50 have a + A phase through hole 50 (+ A) to which an output terminal 48 (+ A) of the magnetic sensor 4 is electrically connected, and an output terminal 48 (−) of the magnetic sensor 4. -A phase through hole 50 (-A) to which A) is electrically connected, and + B phase through hole 50 (+ B) to which the output terminal 48 (+ B) of the magnetic sensor 4 is electrically connected. ) And a through hole 50 (-B) for -B phase to which the output terminal 48 (-B) of the magnetic sensor 4 is electrically connected.

  A plurality of lands 53 on which the semiconductor device 9 is mounted and a plurality of wirings 54 extending from the lands 53 are formed on the other surface 502 of the double-sided substrate 5. The leading ends of the plurality of wirings 54 have a one-to-one relationship with each leading end portion of the plurality of wirings 52, and a through hole 50 is formed in the overlapping portion.

  The plurality of lands 53 include a + A phase land 53 (+ A) corresponding to the output terminal 48 (+ A) of the magnetic sensor 4 and a −A phase corresponding to the output terminal 48 (−A) of the magnetic sensor 4. Lands 53 (-A), + B phase lands 53 (+ B) corresponding to the output terminals 48 (+ B) of the magnetic sensor 4, and output terminals 48 (-B) of the magnetic sensor 4. -B phase land 53 (-B) is included. Among the lands 53, an input terminal 98 (+ A) that is electrically connected to the amplifier unit 90 (+ A) of the semiconductor device 9 is mounted on the land 53 (+ A), and a semiconductor is mounted on the land 53 (−A). An input terminal 98 (−A) that is electrically connected to the amplifier unit 90 (−A) of the device 9 is mounted, and the land 53 (+ B) is electrically connected to the amplifier unit 90 (+ B) of the semiconductor device 9. An input terminal 98 (+ B) that is electrically connected to the amplifier section 90 (−B) of the semiconductor device 9 is mounted on the land 53 (−B).

  The plurality of wirings 54 include a + A phase wiring 54 (+ A) corresponding to the output terminal 48 (+ A) of the magnetic sensor 4 and a −A phase corresponding to the output terminal 48 (−A) of the magnetic sensor 4. Wiring 54 (-A), the + B phase wiring 54 (+ B) corresponding to the output terminal 48 (+ B) of the magnetic sensor 4, and the output terminal 48 (-B) of the magnetic sensor 4. -B phase wiring 54 (-B) is included. In the wiring 54, a through hole 50 (+ A) is formed in an overlapping portion between the wiring 54 (+ A) and the wiring 52 (+ A), and an overlapping portion between the wiring 54 (−A) and the wiring 52 (−A). Is formed with a through hole 50 (-B), and a through hole 50 (+ B) is formed at an overlapping portion between the wiring 54 (+ B) and the wiring 52 (+ B), and the wiring 54 (-B) and the wiring 52 ( A through hole 50 (-B) is formed in an overlapping portion with -B).

  On the other surface 502 of the double-sided substrate 5, a land 55 (Vcc) to which the power supply terminal 48 (Vcc) of the magnetic sensor 4 is connected and a land 55 to which the ground terminal 48 (GND) of the magnetic sensor 4 is connected. (GND) is formed only at a position that is separated from the other land 53 and overlaps with the through hole 50 (Vcc) and the through hole 50 (GND).

In the sensor device 10 configured as described above, the “first land for magnetic sensor” and the “second land for magnetic sensor” in the present invention correspond as follows.
For A phase Magnetic sensor first land = Land 51 (+ A)
Second land for magnetic sensor = Land 51 (-A)
First B for Magnetic Sensor for Land B = Land 51 (+ B)
Second land for magnetic sensor = Land 51 (-B)

In addition, the “first through hole” and the “second through hole” in the present invention correspond as follows.
A-phase first through hole = through hole 50 (+ A)
Second through hole = through hole 50 (-A)
B phase first through hole = through hole 50 (+ B)
Second through hole = through hole 50 (-B)

Further, the “first land for semiconductor device” and the “second land for semiconductor device” in the present invention correspond as follows.
Phase A semiconductor device first land = land 53 (+ A)
Second land for semiconductor device = Land 53 (-A)
B-phase semiconductor device first land = land 53 (+ B)
Second land for semiconductor device = Land 53 (-B)

(Countermeasure against induced voltage in phase A)
FIG. 5 is an explanatory diagram showing a configuration for effectively canceling the induced voltage in the sensor device 10 to which the present invention is applied.

  In the double-sided substrate 5 used in the sensor device 10 configured as described above, the first output terminal (the output terminal 48 (+ A)) of the magnetic sensor 4 is electrically connected on one surface 501 side. One land (land 51 (+ A)) and a second output terminal (output terminal 48 (-A)) paired with the first output terminal (output terminal 48 (+ A)) in the magnetic sensor 4 on one surface 501 side Is connected to the second land for magnetic sensor (land 51 (-A)) in the direction in which the imaginary line extends, the first land for magnetic sensor (land 51 ( + A)) electrically connected to the second land for magnetic sensor (land 51 (−A)) on the other surface 502 side with respect to the first land for semiconductor device (land 53 (+ A)) electrically connected to + A)) Second land for semiconductor device (land 53 (-A)) Direction position, the second land for magneto-sensitive sensor with respect to the first land for magneto-sensitive sensor (land 51 (+ A)) (land 51 (-A)) is opposite to the direction in which the position.

  More specifically, on the other surface 502 of the double-sided substrate 5, the + A phase wiring 54 (+ A) extends from the through hole 50 (+ A) to the side where the through hole 50 (−A) is located, and − The A-phase wiring 54 (-A) extends from the through hole 50 (-A) to the side where the through hole 50 (+ A) is located. Therefore, for the A phase, the first land for the magnetic sensor of the magnetic sensor 4 (land 51 (+ A)) and the second land for the magnetic sensor of the magnetic sensor 4 (land 51 (−A)) The direction in which the second land for semiconductor device (land 53 (−A)) is located with respect to the first land for semiconductor device (land 53 (+ A)) The direction is opposite to the direction in which the second land for magnetic sensor (land 51 (−A)) is located with respect to the first land for land (land 51 (+ A)). That is, a transmission path from the first land for magnetic sensor (land 51 (+ A)) to the first land for semiconductor device (land 53 (+ A)) and the second land for magnetic sensor (land 51 (−A)). ) To the second land for semiconductor devices (land 53 (-A)), the position is switched halfway.

  Therefore, when the magnet 20 rotates, the wiring 47 (+ A) and 47 (−A) between the chip 40 and the output terminals 48 (+ A) and 48 (−A) in the magnetic sensor 4 are the magnetic flux of the magnet 20. The first induced voltage generated by linking, the second induced voltage generated by linking the through holes 50 (+ A) and 50 (−A) with the magnetic flux of the magnet 20, and the chip 97 of the semiconductor device 9 The third induced voltage generated when the wirings 93 (+ A) and 93 (-A) between the input terminals 98 (-A) and 98 (-A) are linked to the magnetic flux of the magnet 20 is any One induced voltage and the other two induced voltages cancel each other. In this embodiment, the transmission path from the first land for magnetic sensor (land 51 (+ A)) to the first land for semiconductor device (land 53 (+ A)), and the second land for magnetic sensor (land 51 (−)). Since the position of the transmission path from A)) to the second land for semiconductor devices (land 53 (-A)) is switched on the other surface 502 of the double-sided substrate 5, the third induced voltage is changed to the first induced voltage. And the second induced voltage.

  Further, when viewed from the direction of the rotation center axis L, the first through-hole (virtual line connecting the first land for a semiconductor device (land 53 (+ A)) and the second land for a semiconductor device (land 53 (−A)) A virtual line connecting the through hole 50 (+ A)) and the second through hole (through hole 50 (-A)), the first land for the magnetic sensor (land 51 (+ A)) and the second land for the magnetic sensor. At least two of the virtual lines connecting (Land 51 (-A)) extend in parallel. For this reason, since the phases of at least two of the first induced voltage, the second induced voltage, and the third induced voltage can be matched, the induced voltages are suitable for canceling each other.

  In this embodiment, the third induced voltage is canceled by the first induced voltage and the second induced voltage. For this reason, the first through hole (through hole 50) with respect to the virtual line connecting the first land for magnetic sensor (land 51 (+ A)) and the second land for magnetic sensor (land 51 (-A)). (+ A)) and the second through-hole (through-hole 50 (-A)), the first land for magnetic sensor (land 51 (+ A)) and the second land for magnetic sensor (land 51). At least one of the virtual lines connecting (-A)) extends in parallel. More specifically, in the A phase, a virtual line connecting the first land for a semiconductor device (land 53 (+ A)) and the second land for a semiconductor device (land 53 (−A)), and a first through hole ( A virtual line connecting the through hole 50 (+ A)) and the second through hole (through hole 50 (−A)) extends in parallel. For this reason, since the phase of a 2nd induced voltage and a 3rd induced voltage can be match | combined, a 3rd induced voltage can be reduced with a 2nd induced voltage. The imaginary line connecting the first land for magnetic sensor (land 51 (+ A)) and the second land for magnetic sensor (land 51 (−A)) extends in an oblique direction with respect to the virtual line. The inclination is 30 ° or less. Therefore, since the phase of the first induced voltage and the third induced voltage can be brought close to each other, the third induced voltage can be reduced by the first induced voltage.

  In particular, in this embodiment, as shown in FIG. 5, since the cross-sectional area of each loop is proportional to the induced voltage, the interval between the through hole 50 (+ A) and the through hole 50 (−A) is optimized. In the magnetic sensor 4, the sum of the area S4A defined by the chip 40 and the output terminals 48 (+ A) and (−A) and the area S50A defined by the through holes 50 (+ A) and 50 (−A) is It is set equal to the area S9A defined by the chip 97 of the amplifier units 90 (+ A) and 90 (−A) of the semiconductor device 9 and the input terminals 98 (−A) and 98 (−A). For this reason, the third induced voltage can be canceled by the first induced voltage and the second induced voltage by switching the transmission path in the middle. Therefore, generation of induction noise can be suppressed.

(Countermeasure against induced voltage in phase B)
The B phase has the same configuration as the A phase. In the double-sided substrate 5, a first land for magnetic sensor (land 51 (+ B)) to which the first output terminal (output terminal 48 (+ B)) of the magnetic sensor 4 is electrically connected on one surface 501 side; For the magnetic sensor in which the second output terminal (output terminal 48 (−B)) paired with the first output terminal (output terminal 48 (+ B)) in the magnetic sensor 4 on one side 501 side is electrically connected. A semiconductor device electrically connected to the first land for magnetic sensor (land 51 (+ B)) on the other surface 502 side in a direction in which a virtual line connecting the second land (land 51 (−B)) extends. The second land for semiconductor device (land 53 ()) that is electrically connected to the second land for magnetic sensor (land 51 (-B)) on the other surface 502 side with respect to the first land for land (land 53 (+ B)). -B)) is located in the first land for the magnetic sensor. Land 51 (+ B)) second lands for magneto-sensitive sensor with respect to (a land 51 (-B)) is opposite to the direction in which the position.

  More specifically, on the other surface 502 of the double-sided substrate 5, the + B phase wiring 54 (+ B) extends from the through hole 50 (+ B) to the side where the through hole 50 (−B) is located, and − The B-phase wiring 54 (-B) extends from the through hole 50 (-B) to the side where the through hole 50 (+ B) is located. Therefore, in the B phase, the first land (land 51 (+ B)) of the magnetic sensor 4 of the magnetic sensor 4 and the second land (land 51 (−B)) of the magnetic sensor of the magnetic sensor 4 The direction in which the second land for semiconductor device (land 53 (−B)) is located with respect to the first land for semiconductor device (land 53 (+ B)) The direction is opposite to the direction in which the second land for magnetic sensor (land 51 (−B)) is located with respect to the first land for land (land 51 (+ B)). That is, the transmission path from the first land for magnetic sensor (land 51 (+ B)) to the first land for semiconductor device (land 53 (+ B)) and the second land for magnetic sensor (land 51 (-B)). ) To the second land for semiconductor devices (land 53 (-B)), the position is switched halfway.

  Therefore, when the magnet 20 rotates, the wiring 47 (+ B) and 47 (−B) between the chip 40 and the output terminals 48 (+ B) and 48 (−B) in the magnetic sensor 4 are the magnetic flux of the magnet 20. The first induced voltage generated by linking, the second induced voltage generated by linking the through holes 50 (+ B) and 50 (−B) with the magnetic flux of the magnet 20, and the chip 97 of the semiconductor device 9 The third induced voltage generated when the wiring 93 (+ B), 93 (-B) between the input terminals 98 (-B) and 98 (-B) is linked to the magnetic flux of the magnet 20 is any One induced voltage and the other two induced voltages cancel each other. In this embodiment, the transmission path from the first land for magnetic sensor (land 51 (+ A)) to the first land for semiconductor device (land 53 (+ A)), and the second land for magnetic sensor (land 51 (−)). Since the position of the transmission path from A)) to the second land for semiconductor devices (land 53 (-A)) is switched on the other surface 502 of the double-sided substrate 5, the third induced voltage is changed to the first induced voltage. And the second induced voltage.

  Further, when viewed from the direction of the rotation center axis L, the first through-hole (virtual line connecting the first land for a semiconductor device (land 53 (+ B)) and the second land for a semiconductor device (land 53 (−B)) An imaginary line connecting the through hole 50 (+ B)) and the second through hole (through hole 50 (−B)), the first land for the magnetic sensor (land 51 (+ B)), and the second land for the magnetic sensor. Of the virtual lines connecting (Land 51 (-B)), at least two virtual lines extend in parallel. For this reason, since the phases of at least two of the first induced voltage, the second induced voltage, and the third induced voltage can be matched, the induced voltages are suitable for canceling each other.

  In this embodiment, the third induced voltage is canceled by the first induced voltage and the second induced voltage. For this reason, the first through hole (through hole 50) with respect to an imaginary line connecting the first land for magnetic sensor (land 51 (+ B)) and the second land for magnetic sensor (land 51 (-B)). (+ B)) and the second through hole (through hole 50 (-B)), a first line for the magnetic sensor (land 51 (+ B)) and a second land for the magnetic sensor (land 51). (-B)) at least one of the virtual lines connecting with each other extends in parallel.

  More specifically, in the B phase, a virtual line connecting the first land for a semiconductor device (land 53 (+ B)) and the second land for a semiconductor device (land 53 (−B)), and a first through hole ( A virtual line connecting the through hole 50 (+ B)) and the second through hole (through hole 50 (−B)) extends in parallel. For this reason, since the phase of a 2nd induced voltage and a 3rd induced voltage can be match | combined, a 3rd induced voltage can be reduced with a 2nd induced voltage. Further, a virtual line connecting the first land for magnetic sensor (land 51 (+ A)) and the second land for magnetic sensor (land 51 (−A)) extends in parallel to the virtual line. doing. Therefore, since the phase of the first induced voltage and the third induced voltage can be brought close to each other, the third induced voltage can be reduced by the first induced voltage.

  In particular, in this embodiment, as shown in FIG. 5, since the cross-sectional area of each loop is proportional to the induced voltage, the interval between the through hole 50 (+ B) and the through hole 50 (−B) is optimized. In the magnetic sensor 4, the sum of the area S4B defined by the chip 40 and the output terminals 48 (+ B) and (−B) and the area S50B defined by the through holes 50 (+ B) and 50 (−B) is It is set equal to the area S9B defined by the chip 97 of the amplifier units 90 (+ B) and 90 (−B) of the semiconductor device 9 and the input terminals 98 (−B) and 98 (−B). For this reason, the third induced voltage can be canceled by the first induced voltage and the second induced voltage by switching the transmission path in the middle. Therefore, generation of induction noise can be suppressed.

(Main effects of this form)
As described above, in the sensor device 10 of this embodiment, the magnetic sensor 4 is mounted on the one surface 501 side and the double-sided substrate 5 on which the semiconductor device 9 is mounted on the other surface 502 side. The semiconductor device 9 is electrically connected through the through hole 50 of the double-sided substrate 5. For this reason, it is not necessary to secure a large space around the magnet 20. In addition, the magnetic sensor 4 and the semiconductor device 9 are arranged at positions where at least a part thereof overlaps in the thickness direction of the double-sided substrate 5, and the through hole 50 is at least one of the magnetic sensor 4 and the semiconductor device 9. It is formed in the position which overlaps. In particular, in this embodiment, the through hole 50 is formed at a position overlapping both the magnetic sensor 4 and the semiconductor device 9 in the thickness direction of the double-sided substrate 5. For this reason, since the transmission path from the magnetic sensor 4 to the semiconductor device 9 is short, the area linked to the magnetic flux is small. Therefore, the induced voltage generated in the transmission path of the output from the magnetic sensor 4 is low. Therefore, since the induced noise generated in the transmission path of the output from the magnetic sensor 4 is small, the influence of the induced noise on the detection result can be reduced.

  The magnetic sensor 4 is provided on the rotation center axis of the magnet 20, and the double-sided substrate 5 is arranged with the thickness direction directed toward the rotation center axis of the magnet 20. Therefore, the magnetic flux is formed along the double-sided substrate 5 as shown in FIG. Accordingly, since the loops of the wirings 52 and 54 formed on the double-sided substrate 5 are little linked to the magnetic flux, the induction noise generated in the transmission path of the output from the magnetic sensor 4 is small.

  The center of the magnetic sensor 4 and the center of the semiconductor device 9 are located on the rotation center axis L. For this reason, the transmission path from the magnetic sensor 4 to the semiconductor device 9 can be arranged in the vicinity of the rotation center axis L. Accordingly, since the temporal change of the magnetic flux interlinking with the transmission path is small, the induced voltage generated in the transmission path of the output from the magnetic sensor 4 is low. Therefore, induction noise can be reduced.

  In this embodiment, the position of the transmission path from the magnetic sensor 4 to the semiconductor device 9 is switched between the + A phase and the −A phase, and the transmission path from the magnetic sensor 4 to the semiconductor device 9 is + B phase and −. The position has also changed with Phase B. Therefore, the direction of the loop from the magnetic sensor 4 to the semiconductor device 9 can be reversed only by changing the configuration of the circuit board 5. Therefore, the polarity of the induced voltage can be reversed in the middle to cancel each other, so that the influence of the induced noise can be mitigated.

(Other embodiments)
In the above-described embodiment, the magnetic sensor 4 is opposed to the magnet 20 in the direction of the rotation center axis L, but the magnetic sensor 4 is opposed to the outer peripheral surface or the outer peripheral surface of the ring-shaped magnet 20. The present invention may be applied to the apparatus 10.

  In the above embodiment, the transmission path from the first land for magnetic sensor (land 51 (+ A)) to the first land for semiconductor device (land 53 (+ A)) and the second land for magnetic sensor ( The position of the transmission path from the land 51 (-A) to the second land for semiconductor devices (land 53 (-A)) is switched on the other surface 502 of the double-sided substrate 5. For this reason, the third induced voltage is canceled by the first induced voltage and the second induced voltage. In contrast, the transmission path from the first land for magnetic sensor (land 51 (+ A)) to the first land for semiconductor device (land 53 (+ A)) and the second land for magnetic sensor (land 51 ( The transmission path from -A)) to the second land for semiconductor devices (land 53 (-A)) may adopt a configuration in which the position is switched on one surface 501 of the double-sided substrate 5. In this case, the first induced voltage is canceled by the second induced voltage and the third induced voltage. In such a case, when viewed from the direction of the rotation center axis L, a virtual line connecting the first land for magnetic sensor (land 51 (+ A)) and the second land for magnetic sensor (land 51 (−A)). In contrast, a virtual line connecting the first land for a semiconductor device (land 53 (+ A)) and the second land for a semiconductor device (land 53 (−A)), and the first through hole (through hole 50 (+ A)). And a second through hole (through hole 50 (-A)) of at least one set of virtual lines extending in parallel. Although the description is omitted, the same applies to the B phase.

10. Magnetic sensor device 2 Rotating body 4 Magnetic sensor (sensor IC)
5. ・ Double-sided substrate 9 ・ ・ Semiconductor device (Amplifier IC)
40 ・ ・ Chip (magnetic sensor side chip)
41 to 44... Magnetic sensitive film 45... Element substrate 47.. Magnetic sensor side wiring 47 (+ A) between the magnetic sensor element substrate (chip) and output terminal. Magnetic sensor side first wiring)
47 (-A) .. Magnetic sensor side wiring (magnetic sensor side second wiring)
47 (+ B) ··· Magnetic sensor side wiring (magnetic sensor side first wiring)
47 (-B) ··· Magnetic sensor side wiring (magnetic sensor side second wiring)
48 ··· Output terminal of magnetic sensor 48 (+ A) ··· Output terminal (first output terminal of magnetic sensor)
48 (-A) .. Output terminal (second output terminal of magnetic sensor)
48 (+ B) .. Output terminal (first output terminal of magnetic sensor)
48 (-B) .. Output terminal (second output terminal of magnetic sensor)
50 ・ ・ Through hole 50 (+ A) ・ ・ First through hole 50 (-A) ・ ・ Second through hole 50 (+ B) ・ ・ First through hole 50 (-B) ・ ・ Second through hole 51 ・ ・Land 51 (+ A) on the magnetic sensor side Land (first land for magnetic sensor)
51 (-A) .. land (second land for magnetic sensor)
51 (+ B) .. land (first land for magnetic sensor)
51 (-B) .. land (second land for magnetic sensor)
52 .. Wiring on double-sided substrate 53.. Land on semiconductor device side 53 (+ A)... Land (first land for semiconductor device)
53 (-A) .. land (second land for semiconductor device)
53 (+ B) .. land (first land for semiconductor device)
53 (-B) .. land (second land for semiconductor device)
54 .. Double-sided substrate wiring 90.. Amplifier section 93.. Amplifier side wiring 93 (+ A) between semiconductor device chip and input terminal... Amplifier side wiring (amplifier side first wiring)
93 (-A) .. Amplifier side wiring (Amplifier side second wiring)
93 (+ B) .. Amplifier side wiring (Amplifier side first wiring)
93 (-B) .. Amplifier side wiring (Amplifier side second wiring)
97 .. Semiconductor device chip (amplifier chip)
98 .. Input terminal of semiconductor device 98 (+ A) .. Input terminal (first input terminal of semiconductor device)
98 (-A) .. Input terminal (second input terminal of semiconductor device)
98 (+ B) .. Input terminal (first input terminal of semiconductor device)
98 (-B) .. Input terminal (second input terminal of semiconductor device)
501 .. One side of double-sided board 502 .. The other side of double-sided board

Claims (7)

A magnet provided on the rotating body side and provided with an N pole and an S pole around the rotation center axis;
A magnetic sensor facing the magnet on the stationary body side;
A semiconductor device having an amplifier for amplifying an output signal from the magnetic sensor;
A double-sided board on which the magnetic sensor is mounted on one side and the semiconductor device is mounted on the other side;
Have
The magnetic sensor and the semiconductor device are arranged at a position where at least a part thereof overlaps in the thickness direction of the double-sided board,
The magnetic sensor and the semiconductor device are electrically connected to each other through at least one of the magnetic sensor and the semiconductor device through a plurality of through holes formed at positions overlapping with each other in the thickness direction of the double-sided substrate. It is connected to,
The magnetic sensor is provided on the rotation center axis of the magnet,
The double-sided board is arranged with the thickness direction facing the rotation center axis direction of the magnet,
In the double-sided board,
A first land for a magnetic sensor to which the first output terminal of the magnetic sensor is electrically connected on the one surface side, and a first land that forms a pair with the first output terminal in the magnetic sensor on the one surface side. A semiconductor device electrically connected to the first land for magnetic sensor on the other side in a direction in which a virtual line connecting the second land for magnetic sensor to which two output terminals are electrically connected extends. The direction in which the second land for semiconductor device that is electrically connected to the second land for magnetic sensor on the other surface side with respect to the first land for operation is located with respect to the first land for magnetic sensor. A magnetic sensor device characterized by being opposite to the direction in which the second land for magnetic sensor is located . The magnetic sensor device according to claim 1, wherein a center of the magnetic sensor and a center of the semiconductor device are located on the rotation center axis . The magnetic sensor device according to claim 1 , wherein the magnet is magnetized to an NS single pole pair . Wherein the plurality of through holes, the magnetism-sensitive sensor and the semiconductor device to any one of claims 1 to 3, characterized in that said formed at a position overlapping in the thickness direction of the double-sided board to both
The magnetic sensor device according to item . In the magnetic sensor, the magnetic sensor side first wiring between the magnetic sensor side chip on which the magnetic film is formed and the first output terminal, and the magnetic sensor side chip and the second output terminal A first induced voltage generated by the second wiring on the magnetic sensor side between the magnet and the magnetic flux of the magnet,
Of the plurality of through holes, a second induced voltage generated when a first through hole corresponding to the first output terminal and a second through hole corresponding to the second output terminal are linked to the magnetic flux of the magnet. ,
In the semiconductor device, the amplifier-side first wiring between the amplifier-side chip in which the amplifier unit is formed and the first input terminal electrically connected to the first output terminal, and the amplifier-side chip and the first The third induced voltage generated when the amplifier-side second wiring between the second input terminal electrically connected to the two output terminals is linked to the magnetic flux of the magnet,
5. The magnetic sensor device according to claim 1 , wherein any one induced voltage and the other two induced voltages cancel each other. When viewed from the rotation center axis direction,
A virtual line connecting the first through hole and the second through hole to a virtual line connecting the first land for the semiconductor device and the second land for the semiconductor device, and the first land for the magnetic sensor And a structure in which at least one of the virtual lines connecting the second land for the magnetic sensor extends in parallel,
Alternatively, a virtual line connecting the first through hole and the second through hole with respect to a virtual line connecting the first land for the magnetic sensor and the second land for the magnetic sensor, and the semiconductor device 6. The magnetism according to claim 5 , wherein at least one of the virtual lines connecting the first land and the second land for a semiconductor device extends in parallel. Sensor device. The magnetism-sensitive sensor, with the rotation of the magnet, the magnetic sensor device according to any one of claims 1 to 6, characterized in that outputs two phase signals having a phase difference of 90 °.

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