JP6123250B2 - Liquid crystal device, method for manufacturing liquid crystal device, and electronic apparatus - Google Patents

Description

  The present invention relates to a liquid crystal device, a method for manufacturing a liquid crystal device, and an electronic apparatus.

  As one of the liquid crystal devices, for example, an active drive type liquid crystal device including a transistor for each pixel as an element for switching control of a pixel electrode is known. Liquid crystal devices are used in, for example, direct-view displays and projector light valves.

  In such a liquid crystal device, liquid crystal molecules in contact with the inorganic alignment film may photochemically react with silanol groups on the surface of the inorganic alignment film, which may deteriorate the display image quality of the liquid crystal device. Thus, for example, Patent Document 1 discloses a technique in which an organic compound is reactively fixed (surface treatment) to the surface of an inorganic alignment film.

JP 2007-11226 A

  However, impurities elute from the sealing material or sealant surrounding the liquid crystal layer, and the impurities diffuse into the display region due to driving or thermal diffusion of the liquid crystal device, or impurities mixed in at the time of liquid crystal injection are part of the display region. Due to the uneven distribution in the part, the display characteristics of the liquid crystal may be deteriorated. In particular, when the surface treatment is performed on the alignment film as in Patent Document 1, since impurities are not adsorbed on the surface of the alignment film, the impurities in the liquid crystal layer increase, and the liquid crystal resistance is reduced due to the impurities in the liquid crystal layer. There exists a subject that it falls, or a voltage holding rate falls.

  An aspect of the present invention has been made to solve at least a part of the above problems, and can be realized as the following forms or application examples.

  Application Example 1 A liquid crystal device according to this application example includes a first substrate, a second substrate disposed opposite to the first substrate, a sealing material for bonding the first substrate and the second substrate, A liquid crystal layer sandwiched between the first substrate and the second substrate, a first alignment film provided between the first substrate and the liquid crystal layer, and between the second substrate and the liquid crystal layer A first alignment film provided at least in a display region, and a second part provided between the first part and the sealing material. And the surface of the second portion has a lower density of hydrophobic groups than the surface of the first portion.

  According to this application example, since the second portion has a low hydrophobic group density and the alignment film of the second portion is exposed, the impurities contained in the liquid crystal layer can be trapped by the alignment film exposed. it can.

  Application Example 2 A liquid crystal device according to this application example includes a first substrate, a second substrate disposed opposite to the first substrate, a sealing material that bonds the first substrate and the second substrate, A liquid crystal layer sandwiched between the first substrate and the second substrate, a first alignment film provided between the first substrate and the liquid crystal layer, and between the second substrate and the liquid crystal layer A first alignment film provided at least in a display region, and a second part provided between the first part and the sealing material. The first portion is provided with a surface treatment film, and the second portion is not provided with the surface treatment film.

  According to this application example, since the surface treatment film is not provided in the second portion and the alignment film in the second portion is exposed, the impurities contained in the liquid crystal layer are trapped by the alignment film exposed. be able to.

  Application Example 3 In the liquid crystal device according to the application example described above, a plurality of pixel electrodes arranged at a predetermined pitch for each pixel are provided in the display area, and a dummy display area provided around the display area is provided. Is provided with a plurality of dummy pixel electrodes that are formed in the same layer as the plurality of pixel electrodes, and are arranged at substantially the same size and pitch as the plurality of pixel electrodes, and are ineffective provided around the dummy display area. In the pixel region, a plurality of conductive films made of the same layer as the plurality of pixel electrodes and arranged at substantially the same size and pitch as the plurality of pixel electrodes are connected to the plurality of conductive films adjacent to each other. A conductive pattern having a conductive connection portion, and the first alignment film formed in at least a part of the ineffective pixel region is formed in the display region and the dummy display region. It is preferable that a low density of hydrophobic groups than the first alignment layer.

  According to this application example, the non-effective pixel region is the second portion having a low hydrophobic group density and the first portion having a high hydrophobic group density from the dummy display region to the display region. The region having the structure is in the state of the same hydrophobic group density. Therefore, display unevenness around the display area can be suppressed, and the reliability of display quality can be improved.

  Application Example 4 In the liquid crystal device according to the application example described above, a plurality of pixel electrodes arranged at a predetermined pitch for each pixel are provided in the display area, and a dummy display area provided around the display area is provided. Is provided with a plurality of dummy pixel electrodes that are formed in the same layer as the plurality of pixel electrodes, and are arranged at substantially the same size and pitch as the plurality of pixel electrodes, and are ineffective provided around the dummy display area. In the pixel region, a plurality of conductive films made of the same layer as the plurality of pixel electrodes and arranged at substantially the same size and pitch as the plurality of pixel electrodes are connected to the plurality of conductive films adjacent to each other. A conductive pattern having a conductive connection portion, and the first alignment film formed in the dummy display region and the ineffective pixel region is the first alignment film formed in the display region. It is preferable density of remote hydrophobic group is low.

  According to this application example, since the dummy display area and the part of the ineffective pixel area are the second part having the low density of the hydrophobic group, the area having the low density of the hydrophobic group can be widened. Accordingly, a region for trapping (capturing) impurities becomes wider, and the trapping capability can be improved.

  Application Example 5 A method for manufacturing a liquid crystal device according to this application example includes a first substrate, a second substrate disposed opposite to the first substrate, and a seal that bonds the first substrate and the second substrate together. A material, a liquid crystal layer sandwiched between the first substrate and the second substrate, a first alignment film provided between the first substrate and the liquid crystal layer, the second substrate and the liquid crystal layer A second alignment film provided between the first alignment film and the second alignment film, wherein at least a display region of the first alignment film is subjected to a surface treatment. And a surface treatment film forming step of forming a first portion on which the surface treatment film is formed and a second portion without the surface treatment film.

  According to this application example, the surface-treated first part and the non-surface-treated second part are formed, so that the alignment film of the second part can be exposed and included in the liquid crystal layer. Impurities to be trapped can be trapped by the alignment film exposed.

  Application Example 6 In the method for manufacturing a liquid crystal device according to the application example, the surface treatment film forming step includes at least a surface treatment step of performing a surface treatment on the surface of the first alignment film to form a surface treatment layer. And removing the surface treatment layer between the display region and the sealing material formed on the first alignment film to form the first portion and the second portion. .

  According to this application example, the first portion subjected to the surface treatment and the second portion from which the surface treatment has been removed are formed. Therefore, the alignment film of the second portion can be exposed, and the liquid crystal layer can be exposed. Impurities contained can be trapped (captured) by the exposed alignment film.

  Application Example 7 A method of manufacturing a liquid crystal device according to this application example includes a first substrate, a second substrate disposed opposite to the first substrate, and a seal that bonds the first substrate and the second substrate together. A material, a liquid crystal layer sandwiched between the first substrate and the second substrate, a first alignment film provided between the first substrate and the liquid crystal layer, the second substrate and the liquid crystal layer A second alignment film provided between the first alignment film and the second alignment film, wherein the first alignment film and the second alignment film are subjected to a surface treatment to form a surface treatment film. Irradiating ultraviolet rays from at least one of the forming step, the bonding step of bonding the first substrate and the second substrate through the sealant, and the first substrate and the second substrate. Removing at least the surface treatment film between the display region and the sealing material A removal step that is characterized by having a.

  According to this application example, after the first substrate and the second substrate are bonded together, the surface treatment film between the display region and the sealing material is removed, that is, the surface treatment films on both substrates are removed at the same time. Therefore, the manufacturing process can be simplified.

  Application Example 8 In the method of manufacturing a liquid crystal device according to the application example, the removing step removes the surface treatment film between the display region and the peripheral portions of the first substrate and the second substrate. It is preferable to do.

  According to this application example, since the surface treatment film is left only in the display region, for example, when the surface treatment film is removed using a mask, the shape of the mask can be simplified. Further, since the shape of the mask is simplified, the alignment between the mask and the sealing material can be simplified.

  Application Example 9 Electronic equipment according to this application example includes the liquid crystal device described above.

  According to this application example, since the above-described liquid crystal device is provided, an electronic apparatus capable of improving display quality can be provided.

1 is a schematic plan view illustrating a configuration of a liquid crystal device according to a first embodiment. FIG. 2 is a schematic cross-sectional view taken along the line H-H ′ of the liquid crystal device illustrated in FIG. 1. FIG. 3 is an equivalent circuit diagram illustrating an electrical configuration of the liquid crystal device. FIG. 3 is a schematic cross-sectional view illustrating a structure of a liquid crystal device. The schematic plan view which mainly shows the structure of an inorganic alignment film among liquid crystal devices. FIG. 6 is a schematic cross-sectional view taken along line A-A ′ of the liquid crystal device illustrated in FIG. 5. FIG. 3 is a schematic plan view showing a region of a liquid crystal device. FIG. 8 is an enlarged plan view showing a pixel electrode layer in a K portion of the liquid crystal device shown in FIG. 7. 5 is a flowchart showing a method for manufacturing a liquid crystal device in the order of steps. The schematic diagram which shows a one part manufacturing method among the manufacturing methods of a liquid crystal device. Schematic which shows the structure of the projection type display apparatus provided with the liquid crystal device. The schematic cross section which mainly shows the structure of an inorganic alignment film among the liquid crystal devices of 2nd Embodiment. 5 is a flowchart showing a method for manufacturing a liquid crystal device in the order of steps. The schematic diagram which shows a one part manufacturing method among the manufacturing methods of a liquid crystal device.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings. Note that the drawings to be used are appropriately enlarged or reduced so that the part to be described can be recognized.

  In the following embodiments, for example, when “on the substrate” is described, the substrate is disposed so as to be in contact with the substrate, or is disposed on the substrate via another component, or the substrate. It is assumed that a part is arranged so as to be in contact with each other and a part is arranged via another component.

  In this embodiment, an active matrix liquid crystal device including a thin film transistor (TFT) as a pixel switching element will be described as an example of the liquid crystal device. This liquid crystal device can be suitably used, for example, as a light modulation element (liquid crystal light valve) of a projection display device (liquid crystal projector).

(First embodiment)
<Configuration of liquid crystal device>
FIG. 1 is a schematic plan view showing the configuration of the liquid crystal device. FIG. 2 is a schematic cross-sectional view along the line HH ′ of the liquid crystal device shown in FIG. FIG. 3 is an equivalent circuit diagram showing an electrical configuration of the liquid crystal device. Hereinafter, the configuration of the liquid crystal device will be described with reference to FIGS.

  As shown in FIGS. 1 and 2, the liquid crystal device 100 according to the present embodiment is sandwiched between the element substrate 10 (first substrate) and the counter substrate 20 (second substrate) arranged opposite to each other and the pair of substrates. And a liquid crystal layer 15. As the first base material 10a constituting the element substrate 10 and the second base material 20a constituting the counter substrate 20, for example, a transparent substrate such as a glass substrate or a quartz substrate is used.

  The element substrate 10 is larger than the counter substrate 20, and both the substrates are bonded via a sealing material 14 disposed along the outer periphery of the counter substrate 20. In the element substrate 10, liquid crystal having positive or negative dielectric anisotropy is sealed between the opposing substrates 20 inside the sealing material 14 provided in an annular shape in plan view, thereby forming a liquid crystal layer 15. For the sealing material 14, for example, an adhesive such as a thermosetting or ultraviolet curable epoxy resin is employed. Spacers (not shown) are mixed in the sealing material 14 to keep the distance between the pair of substrates constant.

  A display area E in which a plurality of pixels P are arranged is provided inside the inner edge of the sealing material 14. The display area E may include dummy pixels arranged so as to surround the plurality of pixels P in addition to the plurality of pixels P contributing to display. Although not shown in FIGS. 1 and 2, a light shielding film (black matrix; BM) for planarly dividing the plurality of pixels P in the display area E is provided on the counter substrate 20.

  A data line driving circuit 22 is provided between the sealing material 14 along one side of the element substrate 10 and the one side. Further, an inspection circuit 25 is provided between the sealing material 14 and the display area E along the other one side facing the one side. Further, a scanning line driving circuit 24 is provided between the sealing material 14 and the display area E along the other two sides that are orthogonal to the one side and face each other. A plurality of wirings 29 connecting the two scanning line driving circuits 24 are provided between the sealing material 14 and the inspection circuit 25 along the other one side facing the one side.

  A light shielding film 18 (parting portion) is provided between the sealing material 14 arranged in an annular shape on the counter substrate 20 and the display region E. The light shielding film 18 is made of, for example, a light shielding metal or metal oxide, and the inside of the light shielding film 18 is a display area E having a plurality of pixels P. Although not shown in FIG. 1, a light shielding film that divides a plurality of pixels P in a plane is also provided in the display area E.

  Wirings connected to the data line driving circuit 22 and the scanning line driving circuit 24 are connected to a plurality of external connection terminals 61 arranged along the one side. Hereinafter, the direction along the one side will be referred to as the X direction, and the direction along the other two sides orthogonal to the one side and facing each other will be described as the Y direction.

  As shown in FIG. 2, on the surface of the first base material 10a on the liquid crystal layer 15 side, a transparent pixel electrode 27 provided for each pixel P and a thin film transistor (TFT: Thin Film Transistor, which is a switching element) are provided. Hereinafter, a “TFT 30”), a signal wiring, and an inorganic alignment film 28 as a first alignment film covering these are formed.

  In addition, a light shielding structure is employed that prevents light from entering the semiconductor layer in the TFT 30 to make the switching operation unstable. The element substrate 10 in the present invention includes at least the pixel electrode 27, the TFT 30, and the inorganic alignment film 28.

  On the surface of the counter substrate 20 on the liquid crystal layer 15 side, a light shielding film 18, a planarizing layer 33 formed so as to cover the light shielding film 18, a counter electrode 31 provided so as to cover the planarizing layer 33, An inorganic alignment film 32 serving as a second alignment film covering the electrode 31 is provided. The counter substrate 20 in the present invention includes at least the counter electrode 31 and the inorganic alignment film 32.

  As shown in FIG. 1, the light shielding film 18 surrounds the display area E and is provided at a position where the scanning line driving circuit 24 and the inspection circuit 25 overlap in a plan view (illustration is simplified). Thus, the light incident on the peripheral circuit including these drive circuits from the counter substrate 20 side is shielded, and the peripheral circuit is prevented from malfunctioning due to the light. Further, unnecessary stray light is shielded from entering the display area E, and high contrast in the display of the display area E is ensured.

  The planarizing layer 33 is made of an inorganic material such as silicon oxide, for example, and is provided so as to cover the light shielding film 18 with optical transparency. As a method for forming such a planarization layer 33, for example, a method of forming a film by using a plasma CVD (Chemical Vapor Deposition) method or the like can be cited.

  The counter electrode 31 is made of a transparent conductive film such as ITO (Indium Tin Oxide), for example, covers the planarization layer 33, and includes an element substrate by vertical conduction portions 26 provided at the four corners of the counter substrate 20 as shown in FIG. It is electrically connected to the wiring on the 10 side.

  The inorganic alignment film 28 covering the pixel electrode 27 and the inorganic alignment film 32 covering the counter electrode 31 are selected based on the optical design of the liquid crystal device 100. For example, an inorganic alignment film formed by depositing an inorganic material such as SiOx (silicon oxide) using a vapor deposition method and substantially vertically aligning with liquid crystal molecules having negative dielectric anisotropy can be given.

  Such a liquid crystal device 100 is of a transmissive type, and the transmittance of the pixel P when no voltage is applied is larger than the transmittance when the voltage is applied, resulting in a normally white display, or when no voltage is applied. A normally black mode optical design is adopted in which the transmittance of the pixel P is smaller than the transmittance when a voltage is applied and dark display is achieved. Polarizing elements are arranged and used according to the optical design on the light incident side and the light exit side, respectively.

  As shown in FIG. 3, the liquid crystal device 100 includes a plurality of scanning lines 3 a and a plurality of data lines 6 a that are insulated from each other and orthogonal to each other at least in the display region E, and capacitance lines 3 b. The direction in which the scanning line 3a extends is the X direction, and the direction in which the data line 6a extends is the Y direction.

  A pixel electrode 27, a TFT 30, and a capacitive element 16 are provided in a region divided by the scanning line 3a, the data line 6a, the capacitive line 3b, and these signal lines, and these constitute a pixel circuit of the pixel P. doing.

  The scanning line 3 a is electrically connected to the gate of the TFT 30, and the data line 6 a is electrically connected to the data line side source / drain region (source region) of the TFT 30. The pixel electrode 27 is electrically connected to the pixel electrode side source / drain region (drain region) of the TFT 30.

  The data line 6a is connected to the data line driving circuit 22 (see FIG. 1), and supplies image signals D1, D2,..., Dn supplied from the data line driving circuit 22 to the pixels P. The scanning line 3a is connected to the scanning line driving circuit 24 (see FIG. 1), and supplies the scanning signals SC1, SC2,..., SCm supplied from the scanning line driving circuit 24 to each pixel P.

  The image signals D1 to Dn supplied from the data line driving circuit 22 to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each of a plurality of adjacent data lines 6a for each group. Good. The scanning line driving circuit 24 supplies the scanning signals SC1 to SCm to the scanning line 3a at a predetermined timing.

  In the liquid crystal device 100, the TFT 30 as a switching element is turned on for a certain period by the input of the scanning signals SC1 to SCm, so that the image signals D1 to Dn supplied from the data line 6a are supplied to the pixel electrode 27 at a predetermined timing. It is the structure written in. The predetermined level of the image signals D1 to Dn written to the liquid crystal layer 15 through the pixel electrode 27 is held for a certain period between the pixel electrode 27 and the counter electrode 31 disposed to face the liquid crystal layer 15. The

  In order to prevent the held image signals D1 to Dn from leaking, the capacitive element 16 is connected in parallel with the liquid crystal capacitance formed between the pixel electrode 27 and the counter electrode 31. The capacitive element 16 is provided between the pixel electrode side source / drain region of the TFT 30 and the capacitive line 3b. The capacitive element 16 has a dielectric layer between two capacitive electrodes.

  FIG. 4 is a schematic cross-sectional view showing the structure of the liquid crystal device. Hereinafter, the structure of the liquid crystal device will be described with reference to FIG. FIG. 4 shows the cross-sectional positional relationship of each component and is expressed on a scale that can be clearly shown.

  As shown in FIG. 4, the liquid crystal device 100 includes an element substrate 10 that is one of a pair of substrates, and a counter substrate 20 that is the other substrate disposed to face the element substrate 10. As described above, the first base material 10a configuring the element substrate 10 and the second base material 20a configuring the counter substrate 20 are configured by, for example, a quartz substrate or the like.

  A lower light-shielding film 3c made of titanium (Ti), chromium (Cr), or the like is formed on the first base material 10a. The lower light-shielding film 3c is planarly patterned in a lattice shape and defines an opening area of each pixel. The lower light shielding film 3c may function as a part of the scanning line 3a. A base insulating layer 11a made of a silicon oxide film or the like is formed on the first base material 10a and the lower light shielding film 3c.

  On the base insulating layer 11a, the TFT 30, the scanning line 3a, and the like are formed. The TFT 30 has, for example, an LDD (Lightly Doped Drain) structure, and is formed on the semiconductor layer 30a made of polysilicon, the gate insulating film 11g formed on the semiconductor layer 30a, and the gate insulating film 11g. And a gate electrode 30g made of a polysilicon film or the like. As described above, the scanning line 3a also functions as the gate electrode 30g.

  The semiconductor layer 30a is formed as an N-type TFT 30 by implanting N-type impurity ions such as phosphorus (P) ions. Specifically, the semiconductor layer 30a includes a channel region 30c, a data line side LDD region 30s1, a data line side source / drain region 30s, a pixel electrode side LDD region 30d1, and a pixel electrode side source / drain region 30d. ing.

  The channel region 30c is doped with P-type impurity ions such as boron (B) ions. The other regions (30s1, 30s, 30d1, 30d) are doped with N-type impurity ions such as phosphorus (P) ions. Thus, the TFT 30 is formed as an N-type TFT.

  A first interlayer insulating layer 11b made of a silicon oxide film or the like is formed on the gate electrode 30g, the base insulating layer 11a, and the scanning line 3a. A capacitive element 16 is provided on the first interlayer insulating layer 11b. Specifically, the first capacitor electrode 16a as the pixel potential side capacitor electrode electrically connected to the pixel electrode side source / drain region 30d and the pixel electrode 27 of the TFT 30, and the capacitor line 3b (as the fixed potential side capacitor electrode). A part of the second capacitor electrode 16b) is disposed to face the dielectric film 16c, whereby the capacitor element 16 is formed.

  The capacitor line 3b (second capacitor electrode 16b) includes at least one of refractory metals such as Ti (titanium), Cr (chromium), W (tungsten), Ta (tantalum), and Mo (molybdenum). , Metal simple substance, alloy, metal silicide, polysilicide, and a laminate of these. Alternatively, it can be formed from an Al (aluminum) film.

  The first capacitor electrode 16 a is made of, for example, a conductive polysilicon film and functions as a pixel potential side capacitor electrode of the capacitor element 16. However, the first capacitor electrode 16a may be composed of a single layer film or a multilayer film containing a metal or an alloy, like the capacitor line 3b. In addition to the function as the pixel potential side capacitor electrode, the first capacitor electrode 16a is connected to the pixel electrode 27 and the pixel electrode side source / drain region 30d (drain) through the contact hole CNT52, the relay layer 55, and the contact holes CNT53 and CNT51. A region).

  A data line 6a is formed on the capacitive element 16 via the second interlayer insulating layer 11c. The data line 6a is electrically connected to the data line side source / drain region 30s (source region) of the semiconductor layer 30a through the contact hole CNT54 formed in the first interlayer insulating layer 11b and the second interlayer insulating layer 11c. Has been.

  A pixel electrode 27 is formed on the data line 6a via a third interlayer insulating layer 11d. The pixel electrode 27 is connected to the first capacitor electrode 16a via the contact holes CNT52, CNT53, and the relay layer 55 that are opened in the second interlayer insulating layer 11c and the third interlayer insulating layer 11d, whereby the semiconductor layer 30a. The pixel electrode side source / drain region 30d (drain region) is electrically connected. The pixel electrode 27 is formed of a transparent conductive film such as an ITO film, for example.

On the pixel electrode 27 and the third interlayer insulating layer 11d, an inorganic alignment film 28 obtained by obliquely depositing an inorganic material such as silicon oxide (SiO ₂ ) is provided. On the inorganic alignment film 28, a liquid crystal layer 15 in which liquid crystal or the like is sealed in a space surrounded by a sealing material 14 (see FIGS. 1 and 2) is provided.

On the other hand, the counter electrode 31 is provided on the entire surface of the second base material 20a. On the counter electrode 31 (on the lower side in FIG. 4), an inorganic alignment film 32 obtained by oblique deposition of an inorganic material such as silicon oxide (SiO ₂ ) is provided. The counter electrode 31 is made of a transparent conductive film such as an ITO film, for example, like the pixel electrode 27 described above.

  The liquid crystal layer 15 takes a predetermined alignment state by the inorganic alignment films 28 and 32 in a state where no electric field is generated between the pixel electrode 27 and the counter electrode 31. The sealing material 14 is an adhesive made of, for example, a photocurable resin or a thermosetting resin, for bonding the element substrate 10 and the counter substrate 20 around them, and a distance between the two substrates is set to a predetermined value. Spacers such as glass fiber or glass beads are mixed.

<Configuration of inorganic alignment film>
FIG. 5 is a schematic plan view mainly showing the configuration of the inorganic alignment film in the liquid crystal device. 6 is a schematic cross-sectional view taken along line AA ′ of the liquid crystal device shown in FIG. FIG. 7 is a schematic plan view showing each region of the liquid crystal device. FIG. 8 is an enlarged plan view showing the pixel electrode layer in the K portion of the liquid crystal device shown in FIG. Hereinafter, the structure of the inorganic alignment film will be mainly described with reference to FIGS. The description from the first base material 10a to the third interlayer insulating layer 11d will be referred to as the first base material 10a.

As shown in FIGS. 5 and 6, the pixel electrode 27 is provided on the first base material 10a constituting the element substrate 10 of the liquid crystal device 100 (illustrated in a simplified manner in FIG. 6). As described above, the inorganic alignment film 28 obtained by obliquely depositing an inorganic material such as silicon oxide (SiO ₂ ) is provided on the entire first base material 10a on which the pixel electrode 27 is provided.

  The inorganic alignment film 28 has a columnar structure 28a (column). The columnar structures 28a are densely provided over the entire first base material 10a. The plurality of columnar structures 28a are inclined with respect to the first base material 10a, and a pretilt angle is given to the liquid crystal molecules of the liquid crystal layer 15 by the inclination angle. Here, the pretilt angle refers to an angle formed by a direction perpendicular to the surface of the first base material 10a and a major axis direction of liquid crystal molecules.

  The surface of the inorganic alignment film 28 having the columnar structures 28a is subjected to surface treatment with a silane coupling material or the like. Specifically, at least the surface of the inorganic alignment film 28 in the display region E is subjected to surface treatment. In FIGS. 5 and 6, the surface treatment is performed on the area from the display area E to the outside. Further, the region that has been subjected to the surface treatment is referred to as “first portion E1”, and the region that has not been subjected to the surface treatment is referred to as “second portion E2”.

  In addition, since the surface treatment is performed by applying the hydrophobic group of the silane coupling material to the surface of the inorganic alignment film, the surface treatment is applied to the region “first portion E1” where the surface treatment is performed. As another expression method for the region “second portion E2” that is not present, the inorganic alignment film 28 of the second portion E2 may be expressed as having a lower density of hydrophobic groups than the inorganic alignment film 28 of the first portion. Good.

  On the other hand, a counter electrode 31 is provided on the second base material 20a constituting the counter substrate 20 (the surface of the second base material 20a on the liquid crystal layer 15 side). On the surface of the counter electrode 31, an inorganic alignment film 32 having a columnar structure 32a is provided as in the element substrate 10 side.

  The surface of the inorganic alignment film 32 is surface-treated with a silane coupling material or the like. Specifically, similarly to the element substrate 10 side, at least the surface of the inorganic alignment film 32 in the display region E is subjected to surface treatment.

  In addition, the alkyl group 41a which comprises the surface layer 41 as a surface treatment film | membrane is produced | generated by the columnar structures 28a and 32a which surface-treated. A surface treatment method using a silane coupling material will be described later.

  FIG. 7 is a schematic plan view showing a configuration when the element substrate 10 (10a) side is viewed from the counter substrate 20 (20a) side. As shown in FIG. 7, in the liquid crystal device 100, a region including a central region is a display region E (a). The area around the display area E (a) is the dummy display area b. A region from the dummy display region b to the end surface of the first base material 10a is an ineffective pixel region c.

  The display area E is an area where pixel electrodes 27 contributing to display are arranged in a matrix. The dummy display area b is an area surrounding the display area E and contributes to display, which is located between the display area E and the peripheral circuit area (area in which the data line driving circuit 22 and the scanning line driving circuit 24 are provided). It is an area that does not. The non-effective pixel region c is a region (including the sealing material 14 region) from the dummy display region b to the edge of the first base material 10a.

  FIG. 8 is an enlarged schematic plan view of a portion K in FIG. Specifically, it is a schematic plan view showing a patterning shape of the pixel electrode 27 layer, in which a region where the display region E, the dummy display region b, and the ineffective pixel region c are arranged in the Y direction is enlarged.

  As shown in FIGS. 7 and 8, in the display area E, the pixel electrodes 27 are arranged in a matrix. In the dummy display area b, pixel electrodes 27a having the same size as the pixel electrodes 27 in the display area E are arranged in a matrix. The non-effective pixel region c is provided with a conductive pattern 27b in which electrodes having the same size as the pixel electrode 27 are arranged in a matrix and the adjacent ones in the vertical and horizontal directions are connected to each other by the connecting portion 43. . The conductive pattern 27b is configured to be electrically floating with respect to the pixel electrode 27.

  In such a configuration of the liquid crystal device 100, a surface layer 41 having an alkyl group 41a is formed at least on the inorganic alignment film 28 in the display region E. The surface layer 41 is not formed on the inorganic alignment film 28 in a part of the dummy display area b and the ineffective pixel area c.

  As described above, since there is the inorganic alignment film 28 of the second portion E2 where the surface layer 41 is not formed around the first portion E1, the impurities that enter the inorganic alignment film 28 (columnar structure 28a) during liquid crystal injection. In addition, impurities coming out of the sealing material 14 and the sealing material can be trapped (captured). In addition, since the inorganic alignment film 28 in the display region E is subjected to surface treatment, the above-described impurities are difficult to adhere to the inorganic alignment film 28. Therefore, it is possible to prevent impurities from aggregating in the display region E.

<Method for manufacturing liquid crystal device>
FIG. 9 is a flowchart showing a manufacturing method of the liquid crystal device in the order of steps. FIG. 10 is a schematic diagram showing a part of the manufacturing method of the liquid crystal device. Hereinafter, a method for manufacturing the liquid crystal device will be described with reference to FIGS.

  First, a manufacturing method on the element substrate 10 side will be described. The first base material 10a to the third interlayer insulating layer 11d will be described as the first base material 10a. First, in step S11, the pixel electrode 27 and the like are formed on the first base material 10a made of a glass substrate or the like using a well-known film forming technique, photolithography technique, and etching technique.

  In step S12, the inorganic alignment film 28 is formed. Specifically, as shown in FIG. 10A, an inorganic material such as silicon oxide is obliquely deposited on the entire third interlayer insulating layer 11d (first base material 10a) provided with the pixel electrode 27. Thus, the inorganic alignment film 28 having the columnar structures 28a is formed.

  In step S <b> 13 (surface treatment process, surface treatment film formation process), a surface layer 41 is formed on the inorganic alignment film 28. Specifically, as shown in FIG. 10B, chemical vapor deposition (hereinafter referred to as CVD) is used. Hereinafter, the structure of the CVD apparatus 70 and the method for manufacturing the surface layer 41 will be described with reference to FIG.

  As shown in FIG. 10B, first, the element substrate 10 and the container 72 containing the silane coupling material 41a1 having the liquid alkyl group 41a are put into a sealed chamber 71 such as a vacuum chamber of the CVD apparatus 70. Next, the container 72 is heated by the heater 73 to vaporize the silane coupling material 41a1. As a result, as shown in FIG. 10C, the surface layer 41 provided with the alkyl group 41a is formed on the surface of the pixel electrode 27 and the exposed surface of the third interlayer insulating layer 11d.

  That is, the silanol group on the surface of the inorganic alignment film 28 reacts with the hydrolyzable group of the silane coupling material 41a1, and the silane coupling material 41a1 adheres, whereby the inorganic alignment film 28 is shown in FIG. A surface layer 41 (surface treatment layer) having an alkyl group 41a on the surface is formed.

  In step S14 (removal step), the element substrate 10 is irradiated with ultraviolet rays (Ultra Violet: UV), and a part of the formed surface layer 41 (alkyl group 41a) is decomposed and removed. Hereinafter, an ultraviolet irradiation method will be described with reference to FIG.

  As shown in FIG. 10D, first, the element substrate 10 is placed in a device that irradiates ultraviolet rays. Thereafter, the element substrate 10 is irradiated with ultraviolet rays (Vacuum Ultra Violet: UV) by using a photomask 81 having a light-shielding portion 81a at least in a region overlapping with the display region E in plan view.

  Thereby, the surface layer 41 (alkyl group 41a) formed on the inorganic alignment film 28 at least in the region outside the display region E in plan view is decomposed and removed. That is, the surface layer 41 (alkyl group 41a) formed on the inorganic alignment film 28 in the display region E remains. The surface layer 41 is removed by directly irradiating the organic functional group of the surface layer 41 by irradiation with vacuum ultraviolet rays, generating active oxygen such as ozone, and oxidizing the surface layer 41 excited by the active oxygen. It is thought to be for the purpose.

  Next, a manufacturing method on the counter substrate 20 side will be described. First, in step S21, the counter electrode 31 is formed on the second base material 20a made of a translucent material such as a glass substrate by using a well-known film forming technique, photolithography technique, and etching technique.

  In step S <b> 22, the inorganic alignment film 32 is formed on the counter electrode 31. The method for manufacturing the inorganic alignment film 32 is, for example, formed by using the oblique deposition method in the same manner as the inorganic alignment film 28 on the element substrate 10 side.

  In step S <b> 23, the surface layer 41 is formed on the inorganic alignment film 32. Specifically, it is formed by chemical vapor deposition (CVD) as in the element substrate 10 side.

  In step S24, the counter substrate 20 is irradiated with ultraviolet rays (UV) to decompose and remove part of the formed surface layer 41 (alkyl group 41a). Specifically, it is formed in the same manner as the element substrate 10 side.

  Thereby, similarly to the element substrate 10 side, the surface layer 41 (alkyl group 41a) applied to the inorganic alignment film 32 at least in the region outside the display region E (second portion E2) in a plan view is decomposed and removed. Is done. Next, a method for bonding the element substrate 10 and the counter substrate 20 will be described.

  In step S <b> 31, the sealing material 14 is applied on the element substrate 10. Specifically, for example, the relative positional relationship between the element substrate 10 and a dispenser (also possible with a discharge device) is changed, so that the periphery of the display area E in the element substrate 10 (so as to surround the display area E). The sealing material 14 is applied.

  In step S32, the element substrate 10 and the counter substrate 20 are bonded together. Specifically, the element substrate 10 and the counter substrate 20 are bonded to the element substrate 10 through the applied sealing material 14. More specifically, it is performed while ensuring the positional accuracy in the vertical and horizontal directions of the substrates 10 and 20.

  In step S33, liquid crystal is injected into the structure from a liquid crystal injection port (reference number omitted), and then the liquid crystal injection port is sealed with a sealing material. Thus, since there is a region (second portion E2) of the inorganic alignment film 28 that is not subjected to surface treatment around the display region E (first portion E1), this inorganic alignment film 28 (columnar structure 28a). In addition, it is possible to trap impurities that enter during liquid crystal injection or impurities that come out of the sealing material 14 or the sealing material. Note that “the surface treatment is not performed” includes those from which the surface treatment has been removed. Thus, the liquid crystal device 100 is completed.

<Configuration of electronic equipment>
Next, a projection display device as an electronic apparatus according to the present embodiment will be described with reference to FIG. FIG. 11 is a schematic diagram showing a configuration of a projection display device including the above-described liquid crystal device.

  As shown in FIG. 11, the projection display apparatus 1000 of the present embodiment includes a polarization illumination device 1100 arranged along the system optical axis L, two dichroic mirrors 1104 and 1105 as light separation elements, and three Reflective mirrors 1106, 1107, 1108, five relay lenses 1201, 1202, 1203, 1204, 1205, three transmissive liquid crystal light valves 1210, 1220, 1230 as light modulation means, and a cross dichroic as a light combiner A prism 1206 and a projection lens 1207 are provided.

  The polarized light illumination device 1100 is generally configured by a lamp unit 1101 as a light source composed of a white light source such as an ultra-high pressure mercury lamp or a halogen lamp, an integrator lens 1102, and a polarization conversion element 1103.

  The dichroic mirror 1104 reflects red light (R) and transmits green light (G) and blue light (B) among the polarized light beams emitted from the polarization illumination device 1100. Another dichroic mirror 1105 reflects the green light (G) transmitted through the dichroic mirror 1104 and transmits the blue light (B).

  The red light (R) reflected by the dichroic mirror 1104 is reflected by the reflection mirror 1106 and then enters the liquid crystal light valve 1210 via the relay lens 1205. Green light (G) reflected by the dichroic mirror 1105 enters the liquid crystal light valve 1220 via the relay lens 1204. The blue light (B) transmitted through the dichroic mirror 1105 enters the liquid crystal light valve 1230 via a light guide system including three relay lenses 1201, 1202, 1203 and two reflection mirrors 1107, 1108.

  The liquid crystal light valves 1210, 1220, and 1230 are disposed to face the incident surfaces of the cross dichroic prism 1206 for each color light. The color light incident on the liquid crystal light valves 1210, 1220, and 1230 is modulated based on video information (video signal) and emitted toward the cross dichroic prism 1206.

  In this prism, four right-angle prisms are bonded together, and a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are formed in a cross shape on the inner surface thereof. The three color lights are synthesized by these dielectric multilayer films, and the light representing the color image is synthesized. The synthesized light is projected on the screen 1300 by the projection lens 1207 which is a projection optical system, and the image is enlarged and displayed.

  The liquid crystal light valve 1210 is the one to which the liquid crystal device 100 described above is applied. The liquid crystal device 100 is arranged with a gap between a pair of polarizing elements arranged in crossed Nicols on the incident side and the emission side of colored light. The same applies to the other liquid crystal light valves 1220 and 1230.

  According to such a projection type display apparatus 1000, the liquid crystal light valve 1210, 1220, 1230 uses the liquid crystal apparatus 100 in which image sticking or the like is suppressed, so that high display quality can be realized.

  The electronic device on which the liquid crystal device 100 is mounted includes a projection display device 1000, a head-up display, a smartphone, an EVF (Electrical View Finder), a mobile mini projector, a mobile phone, a mobile computer, a digital camera, and a digital video. It can be used for various electronic devices such as cameras, displays, in-vehicle devices, audio devices, exposure devices, and lighting devices.

  As described above in detail, according to the liquid crystal device 100, the method for manufacturing the liquid crystal device 100, and the electronic apparatus of the first embodiment, the following effects can be obtained.

  (1) According to the liquid crystal device 100 of the first embodiment, since the surface layer 41 is not provided on at least the inorganic alignment films 28 and 32 of the second portion E2 outside the display region E, the inorganic portion of the second portion E2 The alignment films 28 and 32 are exposed, and the impurities contained in the liquid crystal layer 15 can be trapped by the inorganic alignment films 28 and 32 exposed.

  (2) According to the method for manufacturing the liquid crystal device 100 of the first embodiment, the first portion E1 where the surface layer 41 is formed and the second portion E2 where the surface layer 41 is not formed are formed. The inorganic alignment films 28 and 32 in the second portion E2 can be exposed, and the impurities contained in the liquid crystal layer 15 can be trapped by the exposed inorganic alignment films 28 and 32.

  (3) According to the electronic device of the first embodiment, since the liquid crystal device 100 described above is provided, an electronic device capable of improving display quality can be provided.

(Second Embodiment)
<Configuration of inorganic alignment film>
FIG. 12 is a schematic cross-sectional view mainly showing the configuration of the inorganic alignment film in the liquid crystal device of the second embodiment. Hereinafter, the structure of the liquid crystal device will be described with reference to FIG. The description from the first base material 10a to the third interlayer insulating layer 11d will be referred to as the first base material 10a.

  The liquid crystal device 200 of the second embodiment is different from the first embodiment described above in the range of the region where the surface layer 41 is not provided and the method of manufacturing the liquid crystal device, and the other configurations are generally the same. is there. Therefore, in the second embodiment, portions different from the first embodiment will be described in detail, and descriptions of other overlapping portions will be omitted as appropriate.

  As shown in FIG. 12, in the liquid crystal device 200 of the second embodiment, the pixel electrode 27 is provided on the first base material 10a constituting the liquid crystal device 200, as in the first embodiment. An inorganic alignment film 28 is provided thereon. A counter electrode 31 is provided on the second substrate 20 a (the liquid crystal layer 15 side), and an inorganic alignment film 32 is provided on the counter electrode 31.

  As a feature of the liquid crystal device 200 of the second embodiment, a surface layer 41 is provided on the inorganic alignment film 28 in a region (first portion E1) overlapping the display region E and the sealing material 14 in plan view. That is, the surface layer 41 is not provided in a region (second portion E2) between the display region E and the sealing material 14.

  As described above, since there is the inorganic alignment film 28 of the second portion E2 which is not subjected to the surface treatment between the display region E and the sealing material 14, liquid crystal is injected into the inorganic alignment film 28 (columnar structure 28a). It is possible to trap (capture) impurities entering from time to time and impurities coming out of the sealing material 14 and the sealing material.

  In the second embodiment, the region not subjected to the surface treatment (removed) includes, for example, a region around the liquid crystal injection port and the external connection terminal 61 (not shown).

<Method for manufacturing liquid crystal device>
FIG. 13 is a flowchart illustrating the method of manufacturing the liquid crystal device according to the second embodiment in the order of steps. FIG. 14 is a schematic diagram illustrating a part of the manufacturing method of the liquid crystal device. Hereinafter, a method for manufacturing the liquid crystal device will be described with reference to FIGS.

  First, a manufacturing method on the element substrate 10 side will be described. The first base material 10a to the third interlayer insulating layer 11d will be described as the first base material 10a. First, in step S11, the pixel electrode 27 and the like are formed on the first base material 10a as in the first embodiment.

  In step S12, the inorganic alignment film 28 is formed. Specifically, as in the first embodiment, the columnar structure 28 a is formed by obliquely depositing an inorganic material such as silicon oxide on the entire third interlayer insulating layer 11 d provided with the pixel electrode 27. The inorganic alignment film 28 is formed.

  In step S <b> 13, the surface layer 41 is formed on the inorganic alignment film 28. Specifically, as in the first embodiment, the surface layer 41 is formed using chemical vapor deposition (CVD). Thereby, as shown in FIG. 14A, a surface layer 41 having an alkyl group 41a on the surface of the inorganic alignment film 28 is formed.

  Next, a manufacturing method on the counter substrate 20 side will be described. First, in step S21, the counter electrode 31 is formed on the second base material 20a made of a translucent material such as a glass substrate.

  In step S <b> 22, the inorganic alignment film 32 is formed on the counter electrode 31. The manufacturing method of the inorganic alignment film 32 is formed by using the oblique deposition method in the same manner as the inorganic alignment film 28 on the element substrate 10 side.

  In step S <b> 23, the surface layer 41 is formed on the inorganic alignment film 32. Specifically, it is formed by chemical vapor deposition (CVD) as in the element substrate 10 side.

  Next, in step S <b> 131, the sealing material 14 is applied on the element substrate 10. Specifically, for example, the relative positional relationship between the element substrate 10 and a dispenser (also possible with a discharge device) is changed, so that the periphery of the display area E in the element substrate 10 (so as to surround the display area E). The sealing material 14 is applied.

  In step S132 (bonding step), the element substrate 10 and the counter substrate 20 are bonded together. Specifically, the element substrate 10 and the counter substrate 20 are bonded to the element substrate 10 through the applied sealing material 14. More specifically, it is performed while ensuring the positional accuracy in the vertical and horizontal directions of the substrates 10 and 20.

  In step S133 (removal step), the liquid crystal device 200a in a state where the element substrate 10 and the counter substrate 20 are bonded is irradiated with ultraviolet rays. Specifically, as shown in FIG. 14B, the liquid crystal device 200a is placed in a sealed chamber 80 such as a vacuum chamber. Thereafter, the liquid crystal device 200a is irradiated with vacuum ultraviolet rays (UV) using a photomask 181 having a light shielding portion 181a at least in a region overlapping the display region E and the sealing material 14 in plan view.

  As a result, the surface layer 41 (alkyl group 41a) applied to the inorganic alignment film 28 in the region overlapping at least the display region E and the sealing material 14 in plan view remains, and the surface layer in the other region (second portion E2). 41 is decomposed and removed. The decomposed surface layer 41 (product) is discharged to the outside by, for example, vacuuming from a liquid crystal injection port.

  In step S134, liquid crystal is injected into the structure from a liquid crystal injection port (reference number omitted), and then the liquid crystal injection port is sealed with a sealing material. Thus, since there is a region of the inorganic alignment film 28 that is not subjected to surface treatment in the second portion E2 between the display region E and the sealing material 14, the inorganic alignment film 28 (columnar structure 28a) Impurities that enter during liquid crystal injection and impurities that come out of the sealing material 14 or the sealing material can be trapped. Thus, the liquid crystal device 200 shown in FIG. 14C is completed.

  As described above in detail, according to the liquid crystal device 200 of the second embodiment and the method for manufacturing the liquid crystal device 200, the following effects can be obtained.

  (4) According to the liquid crystal device 200 and the manufacturing method of the liquid crystal device 200 of the second embodiment, the second portion between the display region E and the sealing material 14 after the element substrate 10 and the counter substrate 20 are bonded together. Since the surface layer 41 of E2 is removed, that is, the surface layer 41 of both substrates is removed at the same time, the manufacturing process can be simplified.

  The aspect of the present invention is not limited to the above-described embodiment, and can be appropriately changed without departing from the spirit or idea of the invention that can be read from the claims and the entire specification. It is included in the range. Moreover, it can also implement with the following forms.

(Modification 1)
The above-described second embodiment is not limited to leaving the surface layer 41 at least in a region overlapping the display region E and the sealing material 14 in plan view. For example, the surface layer 41 may be left only in the display region E. Good. As a manufacturing method, the liquid crystal device 200a in which the element substrate 10 and the counter substrate 20 are bonded to each other is irradiated with ultraviolet rays using a photomask 181 having a light shielding portion 181a in a region overlapping the display region E.

  According to this, the surface layer 41 in the region between the display region E and the peripheral portion of the element substrate 10 and the counter substrate 20 can be disassembled and removed. According to this method, the region that overlaps the sealing material 14 in plan view is also irradiated with ultraviolet rays. Thereby, there exists a possibility that the adhesive strength of the sealing material 14 may fall, and it is necessary to confirm the adhesion condition. However, such cost can be suppressed, for example, the shape of the photomask 181 is simplified. In addition, when the shape of the photomask 181 is simple, it is relatively easy to align the position of the photomask 181 with respect to the wafer on which a plurality of liquid crystal devices are attached as compared with the case of the second embodiment. Can be done.

(Modification 2)
As described above, the method for selectively forming the surface layer is not limited to the photomask and UV irradiation. For example, the surface layer is formed only in a necessary region by an ink jet method using a liquid surface treatment agent. It may be.

(Modification 3)
In the second embodiment described above, the display area E and the area (first portion E1) where the surface layer 41 is provided are not limited to the same, and the outside of the display area E as in the first embodiment. It is good also as the 1st part E1 in which the area | region of this is provided with the surface layer 41. FIG.

(Modification 4)
As described above, the first portion E1 provided with the surface layer 41 is not limited to the same area as the display area E or the area outside the display area E. For example, the display area E (a ) To the dummy display area (b) may be the first portion E1 in which the surface layer 41 is provided. According to this, since the first portion E1 is subjected to the surface treatment from the display region E (a) to the dummy display region b, the regions having the same cross-sectional structure are in the same surface treatment (surface layer 41) state. become. Therefore, display unevenness around the display area E can be suppressed, and the reliability of display quality can be improved.

(Modification 5)
As described above, the present invention is not limited to the transmissive liquid crystal device 100. For example, the present invention may be applied to a reflective liquid crystal device.

  3a ... scanning line, 3b ... capacitance line, 3c ... lower light shielding film, 6a ... data line, 10 ... element substrate as first substrate, 10a ... first base material, 11a ... underlying insulating layer, 11b ... first interlayer Insulating layer, 11c ... second interlayer insulating layer, 11d ... third interlayer insulating layer, 11g ... gate insulating film, 14 ... sealing material, 15 ... liquid crystal layer, 16 ... capacitor element, 16a ... first capacitor electrode, 16b ... first 2 capacitance electrodes, 16c ... dielectric film, 18 ... light-shielding film, 20 ... counter substrate as second substrate, 20a ... second base material, 22 ... data line driving circuit, 24 ... scanning line driving circuit, 25 ... inspection circuit , 26 ... vertical conduction part, 27, 27a ... pixel electrode, 27b ... conductive pattern, 28, 32 ... inorganic alignment film (first alignment film, second alignment film), 28a, 32a ... columnar structure, 29 ... wiring, 30 ... TFT, 30a ... Semiconductor layer, 30c ... Channel region 30d ... Pixel electrode side source / drain region, 30d1 ... Pixel electrode side LDD region, 30g ... Gate electrode, 30s ... Data line side source / drain region, 30s1 ... Data line side LDD region, 31 ... Counter electrode, 33 ... Planarization layer, 41 ... Surface layer as a surface treatment film, 41a ... Alkyl group, 43 ... Connection part, CNT51, 52, 53, 54 ... Contact hole, 55 ... Relay layer, 61 ... Terminal for external connection, 70 ... CVD apparatus, 71 ... Sealed chamber, 72 ... container, 73 ... heater, 80 ... sealed chamber, 81, 181 ... photomask, 81a, 181a ... light shielding part, 100, 200, 200a ... liquid crystal device, 1000 ... projection display device, 1100 ... polarized light illumination Apparatus 1101 ... Lamp unit 1102 ... Integrator lens 1103 ... Polarization conversion element 1104 DESCRIPTION OF SYMBOLS 1105 ... Dichroic mirror, 1106, 1107, 1108 ... Reflection mirror, 1201, 1202, 1203, 1204, 1205 ... Relay lens, 1206 ... Cross dichroic prism, 1207 ... Projection lens, 1210, 1220, 1230 ... Liquid crystal light valve, 1300 ... screen.

Claims (5)

A first substrate;
A second substrate disposed opposite the first substrate;
A sealing material for bonding the first substrate and the second substrate;
A liquid crystal layer sandwiched between the first substrate and the second substrate;
A first alignment film provided between the first substrate and the liquid crystal layer;
A second alignment film provided between the second substrate and the liquid crystal layer;
Including
The first alignment film includes:
At least a first portion provided in the display area;
A second portion provided between the first portion and the sealing material;
Have
The liquid crystal device is characterized in that the surface of the second part has a lower density of hydrophobic groups than the surface of the first part ,
In the display area,
A plurality of pixel electrodes arranged at a predetermined pitch for each pixel are provided,
In the dummy display area provided around the display area,
A plurality of dummy pixel electrodes, which are formed of the same layer as the plurality of pixel electrodes and are arranged at substantially the same size and pitch as the plurality of pixel electrodes,
In the ineffective pixel area provided around the dummy display area,
A plurality of conductive films made of the same layer as the plurality of pixel electrodes and arranged at substantially the same size and pitch as the plurality of pixel electrodes, and a conductive connection portion connecting the plurality of conductive films adjacent to each other And a conductive pattern having
The liquid crystal device according to claim 1, wherein the first alignment film formed in the dummy display area and the ineffective pixel area has a lower density of hydrophobic groups than the first alignment film formed in the display area . A first substrate;
A second substrate disposed opposite the first substrate;
A sealing material for bonding the first substrate and the second substrate;
A liquid crystal layer sandwiched between the first substrate and the second substrate;
A first alignment film provided between the first substrate and the liquid crystal layer;
A second alignment film provided between the second substrate and the liquid crystal layer;
Including
The first alignment film includes:
At least a first portion provided in the display area;
A second portion provided between the first portion and the sealing material;
Have
The first portion is provided with a surface treatment film in which a hydrophobic surface layer is generated ,
In the liquid crystal device, the surface treatment film is not provided in the second portion,
In the display area,
A plurality of pixel electrodes arranged at a predetermined pitch for each pixel are provided,
In the dummy display area provided around the display area,
A plurality of dummy pixel electrodes, which are formed of the same layer as the plurality of pixel electrodes and are arranged at substantially the same size and pitch as the plurality of pixel electrodes,
In the ineffective pixel area provided around the dummy display area,
A plurality of conductive films made of the same layer as the plurality of pixel electrodes and arranged at substantially the same size and pitch as the plurality of pixel electrodes, and a conductive connection portion connecting the plurality of conductive films adjacent to each other And a conductive pattern having
The liquid crystal device according to claim 1, wherein the first alignment film formed in the dummy display area and the ineffective pixel area has a lower density of hydrophobic groups than the first alignment film formed in the display area . A first substrate;
A second substrate disposed opposite the first substrate;
A sealing material for bonding the first substrate and the second substrate;
A liquid crystal layer sandwiched between the first substrate and the second substrate;
A first alignment film provided between the first substrate and the liquid crystal layer;
A second alignment film provided between the second substrate and the liquid crystal layer;
A method of manufacturing a liquid crystal device including:
A surface treatment film forming step of forming a surface treatment film by performing a surface treatment on the first alignment film and the second alignment film;
A bonding step of bonding the first substrate and the second substrate through the sealing material;
A removing step of irradiating ultraviolet rays from at least one of the first substrate and the second substrate to remove at least the surface treatment film between the display region and the sealing material;
A method for manufacturing a liquid crystal device, comprising: It is a manufacturing method of the liquid crystal device according to claim 3 ,
The method of manufacturing a liquid crystal device, wherein the removing step removes the surface treatment film between the display region and the peripheral portions of the first substrate and the second substrate. An electronic apparatus comprising the liquid crystal device according to claim 1 .

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