JP6083516B2 - Micro-channel heat exchange device and electronic equipment - Google Patents

Description

  The present invention relates to a microchannel heat exchange device and an electronic apparatus.

  Since characteristics of electronic components may fluctuate due to heat, it is required to keep the temperature below a certain temperature in order to guarantee operation. In addition, with the spread of computers, small and high-performance ones are required, and accordingly, there is an increasing demand for processing a large calorific value in a small space.

  The general cooling method is an air cooling method in which a heat sink is attached directly above the electronic component package. However, when particularly high reliability is required, the cooling water is circulated by a pump to transport the heat to a sufficient heat dissipation space. A water-cooling system is also used. In the water-cooling method, a jacket with a cooling channel for water cooling is generally fixed directly above the electronic component package, but a micro-channel for cooling is formed near the package itself or the semiconductor device that is the heat source. It is also considered to do.

  With the recent trend toward multi-core electronic components, micro-channels can be used to cool multiple local temperature rise points (hot spots) on the chip, and between three-dimensionally stacked LSIs and packages. It is expected to be used as a means to cool a narrow area.

  In the conventional micro flow path, for example, since the refrigerant is passed through a narrow space such as a large number of thin grooves, the fluid resistance is increased, and a pump having a high head is required. However, in order to secure a sufficient refrigerant flow rate for cooling, the pump size becomes large, so it is difficult to install it in a small and thin electronic device, and it will become large even if it is built as an external cooling system Thus, downsizing has become a common issue.

  On the other hand, a structure is known in which a plurality of grooves serving as microchannels are communicated with an upper space between the groove and the cover plate thereon, thereby reducing fluid resistance. In this case, in the micro flow channel having a width of 0.5 mm or less, the low pressure loss structure may be established when the ratio of the communication flow channel is 0.3 to 0.7 with respect to the total flow channel height. Are known. However, the communication flow path portion hardly contributes to the cooling performance and lowers the flow velocity, so that the heat exchange performance is inevitably lowered as it goes downstream. Further, in such an upper space, since there is no support between the plurality of fins that partition the flow path and the cover plate thereon, there are fewer joint portions of the cover plate. The strength is low, and the pressure resistance when the refrigerant is passed through the microchannel is low.

  On the other hand, there is known a structure in which some of the plurality of fins that partition the plurality of micro flow channels for flowing the refrigerant are in contact with the lower surface of the cover plate, thereby increasing the bonding strength of the cover plate.

JP 2009-239043 A JP-A-6-326226

  As described above, even if the structure is such that some of the plurality of fins that partition the plurality of micro flow paths are in contact with the lower surface of the cover plate, the communication flow path portion where the fins do not extend does not contribute to the cooling performance. There is no change, and it does not improve that heat exchange performance falls as it goes downstream as mentioned above.

  An object of the present invention is to provide a microchannel heat exchange device and an electronic apparatus having a low-pressure-loss flow path structure that is reliable in structure and can maintain cooling performance.

According to one aspect of the present embodiment, an insulating housing and a space apart from the ceiling surface in the housing, and formed on the bottom surface with a space in the width direction, define a groove-shaped microchannel. A plurality of insulative fins, an insulative protrusion that is formed on the upper end of the plurality of fins across the middle of the plurality of fins and projects downward from the ceiling surface; An inflow side manifold connected to one end of the plurality of fins in the body, an outflow side manifold connected to the other end of the plurality of fins in the housing, and formed on at least one of the bottom surface or the ceiling surface of the housing A heat exchange fluid inlet connected to the inflow side manifold, a heat exchange fluid outlet formed on at least one of the bottom surface or the ceiling surface of the housing and connected to the outflow side manifold, and a rear surface of the bottom surface. The arrangement surface of the heat exchanger object that, through the interior of the said fin protrusions, and a via connected to the heat exchange object, the microchannel heat exchanger, characterized in that it comprises a provided.
The objects and advantages of the invention will be realized and attained by means of the elements and combinations particularly pointed out in the appended claims. It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention.

  According to this embodiment, it is possible to realize a low-pressure-loss flow path structure that is reliable in structure and can maintain cooling performance.

FIG. 1A is a top view showing a first example of the microchannel heat exchange device according to the embodiment, and FIG. 1B is an internal plan view showing the first example of the microchannel heat exchange device according to the embodiment. FIGS. 1C, 1D, and 1E are sectional views taken along lines II, II-II, and III-III of FIGS. 1A and 1B, respectively. 2A and 2B are side cross-sectional views showing a second example and a third example of the microchannel heat exchange device according to the embodiment. FIG. 3A is an internal plan view showing a fourth example of the microchannel heat exchange device according to the embodiment, and FIGS. 3B and 3C are the IV-IV line and V in FIG. 3A, respectively. It is sectional drawing seen from the -V line. FIG. 4 is a table showing characteristics of Comparative Examples 1, 2, and 3 and the microchannel heat exchange device according to the embodiment. FIG. 5 is a cross-sectional view illustrating a mounted state of the microchannel heat exchange device according to the embodiment. 6A to 6F are cross-sectional views illustrating an example of a process for forming a substrate of the microchannel heat exchange device according to the embodiment. FIGS. 7A to 7G are cross-sectional views illustrating an example of a process of forming a lid of the microchannel heat exchange device according to the embodiment. FIG. 8 is a cross-sectional view illustrating a first example of a laminated structure of the microchannel heat exchange device according to the embodiment. FIG. 9 is a cross-sectional view illustrating a second example of the laminated structure of the microchannel heat exchange device according to the embodiment.

  Embodiments will be described below with reference to the drawings. In the drawings, similar components are given the same reference numerals.

(First embodiment)
FIGS. 1A and 1B are a top view, an internal plan view, and a side sectional view showing an example of the microchannel heat exchange device according to the first embodiment, and FIGS. e) are cross-sectional views taken along lines I-I, II-II, and III-III in FIGS. 1A and 1B, respectively.
The housing of the microchannel heat exchange device 1 shown in FIG. 1 is formed of a substrate 2 and a lid 3 that covers the substrate 2 from above.

  The substrate 2 is surrounded by a wall 2a, and the upper side is formed in a concave shape. An upstream manifold 2b is formed near one end inside the substrate 2, a downstream manifold 2c is formed near the other end, and a plurality of long sides in the x direction from one end to the other end are formed on the bottom surface of the region between them. Fins 2f are formed.

  The plurality of fins 2f are formed at intervals in the width direction (y direction) of the substrate 2, that is, from one side to the other side, and the grooves 2g formed on the sides of the fins 2f exchange heat. It is a micro flow path through which a refrigerant as a medium flows. Further, fitting grooves 2 d are formed in a straight line in the width direction of the substrate 2 in the middle of the flow of the refrigerant in the upper part of the plurality of fins 2 f, that is, on the downstream side. The fitting groove 2d is located above a part of the attachment region of the cooling object 50 such as an electronic component arranged on the back surface of the substrate 2.

  As a result, the substrate 2 has a structure in which the refrigerant supplied to the upstream manifold 2b reaches the downstream manifold 2c through the groove 2g.

  The lid 3 has an open bottom shape in which the lower side is formed in a concave shape, and the bottom surface of the surrounding side wall 3a has a shape that can be adhered to each other by being superimposed on the top surface of the wall portion 2a around the substrate 2. ing. The side wall 3 a has such a height that a gap is formed between the ceiling surface 3 e surrounded by the side wall 3 a and the fin 2 f on the substrate 2 in a state where the lid 3 is covered with the substrate 2. On the back surface of the substrate 2 in the ceiling surface 3e inside the lid 3, that is, at a position above a part of the surface on which the object to be cooled is disposed, a flow path constriction protrusion 3 f that protrudes downward is formed. The channel narrowing projection 3f is joined to a part of the upper ends of the plurality of fins 2f in the longitudinal direction, and is bridged to the upper ends of the fins 2f across the plurality of fins 2f and the lateral grooves 2g. have. On the lower surface of the channel narrowing projection 3f, a fitting projection 3d to be fitted into the fitting groove 2d of the fin 2f of the substrate 2 is formed.

  In the region near one end of the lid 3, an inflow port 3 b positioned on the upstream side manifold 2 b is formed, and an introduction pipe 4 is connected to the inflow port 3 b. Further, an outlet 3c located on the downstream manifold 2c is formed in a region near the other end of the lid 3, and a discharge pipe 5 is connected to the outlet 3c.

  The wall 3a on the lower surface of the lid 3 and the wall 2a on the upper surface of the substrate 2 are joined so as to be sealed. Thus, a heat exchange medium flow path communicating with the groove 2g is formed between the ceiling surface 3e of the lid 3 and the fin 2f, except for the joint portion between the flow path constriction projection 3f of the lid 3 and the fin 2f. Is done. Further, the flow path narrowing projection 3f is located above the attachment region of the cooling target 50 on the back surface of the substrate 2 in a state where the substrate 2 and the lid 3 are joined.

  In the microchannel heat exchange device 1 described above, for example, a semiconductor device is attached to the lower surface of the substrate 2 as the cooling object 50, the inflow pipe 4 is connected to a refrigerant supply unit (not shown), and the outflow pipe 5 is further connected to the refrigerant recovery unit. Connect to (not shown). In this state, as shown by the broken line arrow in FIG. 1C, when the refrigerant flows from the inflow pipe 4 through the inflow port 3b of the heat exchange device 1 to the upstream side manifold 2b, the refrigerant of the lid 3 It flows through the internal space and the groove 2g below it, and finally reaches the downstream manifold 2c.

  The refrigerant flowing in the groove 2g exchanges heat with the cooling object 50 transmitted to the fins 2f via the bottom of the substrate 2, for example, heat of the semiconductor device, and cools the cooling object 50 via the fins 2f and the substrate 2. To do.

  Since the upper channel formed between the ceiling surface 3e and the fin 2f is blocked by the channel narrowing projection 3f joined to a part of the fin 2f, the coolant channel is restricted to the groove 2g below it. Therefore, it becomes locally narrow, and the flow velocity of the refrigerant passing thereunder increases locally. For this reason, the refrigerant whose temperature has increased by proceeding from the upstream toward the downstream in the groove 2g is prevented from lowering the cooling capacity due to the increase in the flow velocity on the downstream side, and can improve the cooling performance of the necessary portion. . And the refrigerant | coolant which reached the downstream manifold 2c flows out into the outflow pipe 5 through the outflow port 3c.

  By the way, the shape of the channel narrowing projection 3f is formed in a substantially rectangular parallelepiped shape as illustrated in FIG. 1, and the fitting projection 3d is formed on a part of the lower surface thereof, but the shape is limited to this. It is not a thing. For example, as illustrated in FIG. 2A, a structure in which the bottom portion of the channel narrowing projection 3f is fitted into the fitting groove 2d of the fin 2f without providing the fitting projection on the lower surface of the channel narrowing projection 3f. It may be. Further, as illustrated in FIG. 2B, the front and back surfaces of the flow path constriction protrusion 3f may be tapered so that the interval decreases from the ceiling surface 3e toward the fin 2f. According to the channel narrowing projection 3f having such a tapered surface, it is possible to reduce the fluid resistance of the locally concentrated refrigerant in the groove 2g below the channel narrowing projection 3f, and to smooth the flow.

  Further, the fins 2f formed in the substrate 2 may adopt a fin structure as shown in FIG. Fig.3 (a) is an internal top view which shows the modification of the microchannel heat exchange apparatus which concerns on this embodiment, FIG.3 (b), (c) is the IV-IV line | wire of Fig.3 (a), respectively. , V-V sectional view.

  In FIG. 3, a short second fin 2h is locally formed in the groove 2g between the fins 2f under the channel narrowing protrusion 3f, and the fins 2f and 2h are narrowed to each other and the fins are narrowed. The total area may be increased. As a result, the fin total surface area increases under the channel narrowing projection 3f, so that it is possible to increase the cooling capacity of the necessary portion. In this structure, when the total width of the groove 2g between the fins 2f and 2h under the channel narrowing projection 3f is narrower than the total width of the groove 2g in other regions, the flow velocity of the narrowed channel is as shown in FIG. And the cooling capacity is further improved locally.

  Next, the cooling effect of the microchannel heat exchange device will be described with reference to the table of FIG. 4 by comparing the structure of this embodiment with another structure.

  In each of the microchannel heat exchange devices of Comparative Examples 1 to 3 shown in FIG. 4 and the example of the present embodiment, the microchannel arrangement area is a square size of 25 mm × 25 mm, the bottom surface of the substrate 2 and the ceiling of the lid 3 The height of the flow path between the surfaces 3e is set to 100 μm, and the flow rate of the refrigerant is set to the same as 1 m / second. Further, in Comparative Examples 1 and 2 and the example of the present embodiment, the same number of fins 2f are formed, the fin thickness is set to 30 μm, and the fin pitch is set to 100 μm. Furthermore, in the example of the present embodiment, the channel narrowing projection 3f has a tapered shape as shown in FIG. 2B, and its length, that is, the length in the direction of the refrigerant flow is set to 100 μm.

  In Comparative Example 1 in FIG. 4, the channel narrowing protrusion employed in the present embodiment is not formed, the fin height is 100 μm, and the fin has a structure that reaches the ceiling surface from the bottom surface. In Comparative Example 2, the channel constriction protrusion is not formed, and the height of the fin is 30 μm. That is, Comparative Example 2 has a structure in which the height distance between the fin and the ceiling surface, that is, the height of the communication channel is “0.7” when the channel height is “1”. doing. Comparative Example 3 has a structure in which the channel narrowing protrusion and the fin are not formed. In the example of the present embodiment, the channel narrowing protrusion 3f is formed, and when the channel height is “1”, the distance in the height direction between the fin 2f and the ceiling surface 3e is “0.7”. ”.

  In the term of pressure loss in FIG. 4, the pressure loss of Comparative Example 1 in which all fins are connected to the bottom surface and the ceiling surface is 140 kPa. The pressure loss of Comparative Example 2 in which all the fins do not reach the ceiling surface is 70 kPa, which is about 50% of Comparative Example 1. The pressure loss of Comparative Example 3 where no fin is present is as small as 44 kPa. On the other hand, the pressure loss of this embodiment was 98 kPa, which was 30% lower than that in Comparative Example 1, but higher than that in Comparative Example 2.

  In FIG. 4, the thermal resistance of Comparative Example 2 is 0.18 ° C./W, which is about 11% higher than the thermal resistance of Comparative Example 1, and the thermal performance is deteriorated. Moreover, since the heat resistance of the comparative example 3 does not have fins, the area for heat exchange is small, the heat resistance is as large as 0.20 ° C./W, and the heat exchange performance is deteriorated. On the other hand, in the example of this embodiment, the thermal resistance is 0.16 ° C./W, and the heat exchange performance is good as in Comparative Example 1.

  In FIG. 4, in Comparative Examples 2 and 3, the fins do not support the ceiling surface, so the mechanical strength is weaker than that of Comparative Example 1, and the ceiling surface is easily bent. On the other hand, in the comparative example 1 and the example of the present embodiment, since the fins directly or indirectly support the ceiling surface, the mechanical strength is increased and the bending becomes difficult. Therefore, even if the casings of Comparative Example 1 and the example of this embodiment are stacked in a plurality of stages, mechanical strength can be ensured. Note that the channel narrowing protrusion 3f formed only in the example of this embodiment also functions as a beam of the ceiling surface 3e, and strengthens the strength of the housing.

  Further, according to the example of the present embodiment, as illustrated in FIG. 1, since the channel narrowing projection 3f and the fin 2f are fitted to each other, the substrate 2 and the lid 4 are aligned (alignment). ) And the throughput in the manufacturing process is improved.

  By the way, the microchannel heat exchange device 1 is attached to an electronic device. In the electronic device, for example, a semiconductor device 9 mounted on a circuit board 8 as shown in FIG. 5 is cooled, for example, and a header plate 11 is used. Heat exchange fluid flows in and out.

  The header plate 11 is placed on a lid (lid: LID) 12 that covers the microchannel heat exchange device 1 connected to the upper surface of the semiconductor device 9, and the refrigerant flows into and out of the microchannel heat exchange device 1. have. The header plate 11 and the LID 12 are formed of a material having good thermal conductivity, such as copper, Alsic, or silicon carbide.

  LID12 has the inflow hole 12b and the outflow hole 12c which are connected to each of the inflow port 3b of the microchannel heat exchange apparatus 1, and the outflow port 3c. The header plate 11 has an inflow pipe 11b connected to the inflow hole 12b of the LID 12 and an outflow pipe 11c connected to the outflow hole 12c. The upper portions of the inflow pipe 11b and the outflow pipe 11c both protrude upward. Between the header plate 11 and the LID 12, an annular packing 14 surrounding the inflow pipe 11b and the inflow hole 12b and an annular packing 15 surrounding the inflow pipe 11c and the inflow hole 12c are sandwiched.

  The LID 12 is attached via the sheet-like packing 16 on the microchannel heat exchange device 1 in close contact with the semiconductor device 9 mounted on the circuit board 8 via the solder bumps 9a. The sheet-like packing 16 is formed with an inflow side opening 16b and an outflow side opening 16c connected to the inflow port 3b and the outflow port 3c of the microchannel heat exchange device 1. Further, in the LID 12 and the microchannel heat exchange device 1, the wide flange at the lower end of the inflow hole 12b is fitted with a funnel-like packing 17b inserted into the inflow port 3b, and the wide outlet flange at the lower end of the outflow hole 12c is inserted into the outflow port. A funnel-shaped packing 17c to be inserted into 3c is fitted. Further, around the microchannel heat exchange device 1, a frame-shaped sealing plate 18 is sandwiched between the circuit board 8 and the LID 12, and an adhesive 19 is interposed above and below the sealing plate 18.

  In FIG. 5, an electronic component 10, such as a capacitor, is attached under the circuit board 8, and the circuit board 8 is mounted on another circuit board 20 via solder bumps 8a.

  The header plate 11 and the LID 12 have a function of supplying and recovering the refrigerant to the microchannel heat exchange device 1 and also have a heat diffusion function of the microchannel heat exchange device 1. Thereby, the cooling efficiency of the semiconductor device 9 that is the object to be cooled can be further increased.

  Next, an example of a method for forming the microchannel heat exchange device 1 will be described with reference to FIGS.

Initially, the formation method of the board | substrate 2 which has a recessed part as shown in FIG. 1 is demonstrated.
In order to form the substrate 2, as shown in FIG. 6A, a base material made of an insulating material having good heat transfer, for example, a first silicon wafer 21 having a thickness of 300 μm to 500 μm is prepared. Then, a first photoresist 22 is applied on the first surface of the first silicon wafer 21. Further, the first photoresist 22 is pre-baked at about 80 ° C., for example. Pre-baking is performed in the same manner after the application of a photoresist to be described later. As the first photoresist 22, for example, a novolac positive type is used, and the rotation speed of the coater at the time of coating is, for example, about 2000 rpm, and these conditions are similarly applied to the photoresist described below. It is not limited to. Further, the first silicon wafer 21 is divided into substrate forming regions for forming a plurality of the substrates 2 in the vertical and horizontal directions. In the following description, one substrate forming region will be described.

  Thereafter, the first photoresist 22 is exposed using the exposure mask 23, and a latent image including the shape of the fitting groove 2 d is formed on the first photoresist 22. Subsequently, the first photoresist 22 is developed, baked, and the like, so that the latent image is visualized and an opening 22a is formed in the portion where the fitting groove 2d is formed, as shown in FIG. 6B.

  Next, as shown in FIG. 6C, by using the first photoresist 22 as a mask and etching the first silicon wafer 21 through the opening 22a, the fitting groove 2d and a straight line connecting them are formed. The long groove 21d is formed long in the width direction. Thereafter, the first photoresist 22 is removed and further washed.

  Thereafter, as shown in FIG. 6D, a second photoresist 23 is applied to the upper surface of the first silicon wafer 21, and then the second photoresist 23 is used using the second exposure mask 24. And a latent image including the planar shape of the wall 2a and the fin 2f of the substrate 2 shown in FIG. Subsequently, by developing and baking the second photoresist 23, the latent image is visualized to cover the planar shape of the wall 2a and the fin 2f of the substrate 2 as shown in FIG. 6 (e). A resist pattern having a shape is formed. Thereafter, using the second photoresist 23 as a mask, the first silicon wafer 21 is etched. Thereafter, the second photoresist 23 is removed and further washed.

  As a result, as shown in FIG. 6F, the first silicon wafer 21 is formed with a recess surrounded by the wall 2a shown in FIG. 1, and a plurality of fins 2f are formed on the bottom surface of the recess. To do. An already formed groove 21d is applied to a part of the fin 2f as the fitting groove 2d. The first silicon wafer 21 is separated into each substrate formation region by dicing described later and used as the substrate 2 described above.

The lid 3 shown in FIG. 1 is formed by the following method.
In order to form the lid 3, a base material made of an insulating material having good heat transfer, for example, a second silicon wafer 31 having a thickness of 300 μm to 500 μm is prepared. The second silicon wafer 31 is divided into a plurality of lid forming areas in which the lid 3 is formed vertically and horizontally on the surface. In the following description, a single lid forming area will be described. .

  First, as shown in FIG. 7A, a third photoresist 32 is applied on the first surface of the second silicon wafer 31. Subsequently, the third photoresist 32 is exposed using the third exposure mask 33, and a latent image including the shape of the fitting protrusion 3 d is formed on the third photoresist 32. Subsequently, the first photoresist 32 is developed, baked, etc., so that the latent image is visualized as shown in FIG. 7B, and linearly formed on the portion where the fitting protrusion 3d shown in FIG. 1 is formed. The pattern is formed.

  Next, as shown in FIG. 7C, the region of the second silicon wafer 31 exposed from the third photoresist 32 is etched, thereby extending the fitting protrusion 3d shown in FIG. 1 in the width direction. Form in a straight line. Thereafter, the third photoresist 32 is removed and further washed.

  Thereafter, a fourth photoresist 34 is applied on the first surface of the second silicon wafer 31. Next, the fourth photoresist 34 is exposed using a fourth exposure mask (not shown), and thereafter development or the like is performed. As a result, as shown in FIG. 7D, a pattern is formed to cover the region for forming the flow path constricting projection 3f and the region for forming the wall 3a around the lid 3.

  Next, as shown in FIG. 7E, when the patterned fourth photoresist 34 is used as a mask and the second silicon wafer 31 is etched, the channel narrowing projection 3f as shown in FIG. And the recessed part of the circumference | surroundings and the wall part 3a of the circumference | surroundings are formed. The bottom of the recess surrounded by the wall 3 a becomes the ceiling surface 3 e of the lid 3. Thereafter, the fourth photoresist 34 is removed and further washed.

  Subsequently, after applying a fifth photoresist 35 on the second surface of the second silicon wafer 31, the fifth photoresist 35 is exposed using a fifth exposure mask (not shown). After that, by performing development, baking, etc., the openings for forming the inlet 3b and the outlet 3c of the lid 3 are formed in the fifth photoresist 35 as shown in FIG. 7 (f). Form.

  Next, as shown in FIG. 7G, the fifth photoresist 35 is used as a mask, and the inlet 3b and the outlet 3c are formed on the ceiling surface 3e of the recess formed in the second silicon wafer 31. To do.

  Next, the wall 2a formed on the first silicon wafer 21 and the wall 3a formed on the second silicon wafer 31 are aligned and joined together. As a bonding method, for example, the bonding surfaces of the first and second silicon wafers 21 and 31 are irradiated with oxygen plasma or nitrogen plasma, or the bonding surfaces thereof are irradiated with an argon laser by an ion gun. When the surfaces are subjected to surface activation treatment and then bonded together, the joint surfaces are firmly joined. In the case of irradiation with oxygen plasma or nitrogen plasma, direct bonding is performed by applying pressure and annealing. As another bonding method, for example, bonding may be performed with an adhesive via a resin such as epoxy or polyimide. In addition, you may use the electron beam exposure method etc. for exposure of said photoresist.

  Thereafter, the bonded first and second silicon wafers 21 and 31 are diced to form the microchannel heat exchange device 1 shown in FIG. 1 having a housing made of the substrate 2 and the lid 3, and thereafter The inlet pipe 4 is connected to the inlet 3b of the lid 3, and the outlet pipe 5 is connected to the outlet 3c.

  As described above, since the microchannel heat exchange device 1 is formed using the method applied to the manufacturing process of the semiconductor device, it can be miniaturized according to the size of the object to be cooled, for example, the semiconductor device. become.

  An example of a structure in which the microchannel heat exchange devices 1 according to this embodiment are stacked in a plurality of stages is shown in FIG. In FIG. 8, three types of substrates and two types of lids are prepared for the microchannel heat exchange device 1, respectively.

  The first substrate 2A has the same structure as the substrate 2 of FIG. 1, and a plurality of conductive first through silicon vias that penetrate vertically in a portion of the fin 2f that joins the channel narrowing projection 3f. (TSV) 2x is formed. The second substrate 2B has the same structure as the first substrate 2A, except that flow path ports 2j and 2k are formed at the bottoms of the upstream manifold 2b and the downstream manifold 2c. The third substrate 2C has the same structure as that shown in FIG. 1, and further has flow passage openings 2j and 2k formed at the bottoms of the upstream manifold 2b and the downstream manifold 2c.

The first lid 3A has the same structure as the lid 3 of FIG. The second lid 3B has the same structure as that of the first lid 3A, and the second TSV 3x joined to the first TSV 2x in the fin 2f has a thickness on the channel narrowing projection 3f. It is formed to penetrate in the direction. Note that wiring (not shown) and electrode pads (not shown) may be formed on the upper surface of the second lid 3B. The lower ends of the first TSVs 2x are connected to electrode pads (not shown) on the upper surfaces of the semiconductor devices 9A and 9B, respectively. The upper ends of the second TSVs 3x are connected to the bumps 9b and 9c of the semiconductor devices 9B and 9C. The lowermost semiconductor device 9A is mounted on the circuit board 8 in the same manner as described above.

  Using such first, second, and third substrates 2A, 2B, and 2C and the first and second lids 3A and 3B, the microchannel heat exchange device 1 is formed. That is, the first housing 1A is formed by bonding the second lid 3B on the first substrate 3A, and the upper surface of the first semiconductor device 9A is bonded to the lower surface thereof. Further, the second housing 1B is formed by bonding the second lid 3B on the second substrate 2B, and the upper surface of the second semiconductor device 9B is bonded to the lower surface thereof. Further, the first case 3C is formed by bonding the first lid 3A on the third substrate 2C, and the upper surface of the third semiconductor device 9C is bonded to the lower surface thereof.

  Further, the first casing 1A, the second casing 1B, and the third casing 1C are overlapped in order from the bottom, and a frame-shaped first sealing spacer 26 is interposed along the outer periphery between them. Let them join. A frame-shaped second sealing spacer 27 is also interposed around the first, second, and third semiconductor devices 9a, 9b, 9c. The first and second sealing spacers 26 and 27 may be made of, for example, resin or silicon. When the first and second sealing spacers 26 and 27 are formed from silicon, the first, second, and third casings 1A, 1B, and 1C are subjected to the above surface activation treatment. You may stick together. Thereby, the gap between the first and second sealing spacers 26 and 27 becomes a flow path for the refrigerant, and flow path ports 2j and 2k exist above and below them. Further, as in FIG. 1, the inflow pipe 4 is connected to the inflow port 3b of the third casing 1C, and the outflow pipe 5 is connected to the outflow port 3c.

  In FIG. 8, the refrigerant is supplied into the third housing 1 </ b> C through the inflow pipe 4, flows through the micro flow path between the fins 2 f inside thereof, and is further discharged through the outflow pipe 5. The refrigerant supplied into the third casing 1C passes through the flow path port 2j at the bottom of the third casing 1C, the inlet port 3b and the flow path port 2j of the second and first casings 1A and 1B. They are supplied to the inside and flow through the micro flow path between the respective fins 2f. The refrigerant that has passed through the micro flow path flows out toward the outflow pipe 5 through the outflow port 3c and the flow path port 2k of the first and second casings 1A and 1C.

  In the middle of the micro channel, the flow becomes faster under the channel narrowing projection 3f as described above, and the local cooling effect is improved. In addition, since the ceiling surface 3e of the upper lids 3A and 3B is not easily bent by the support of the channel narrowing projection 3f and the fins 2f, the mechanical strength is increased. Therefore, the first, second and third casings 1A and 1B Even if 1C is laminated, the mechanical structure is prevented from deteriorating. The channel narrowing projection 3f also functions as a beam of the ceiling surface 3e, and strengthens the strength of the casing.

  By the way, the lamination | stacking of the housing | casing for forming the microchannel heat exchange apparatus 1 is not restricted to the structure shown in FIG. For example, as shown in FIG. 9, the first housing 1A and the second housing 1B have a structure in which the surfaces on the ceiling surface 3e side face each other and the semiconductor devices 9a and 9b are stacked in the opposite directions. May be. In this case, the inflow pipe 4 is connected to the flow path port 2j of the inflow side manifold 2b of the second substrate 2B, and the outflow pipe 5 is connected to the flow path port 2k of the outflow side manifold 2c of the second substrate 2B. According to the microchannel heat exchange device 1 as shown in FIG. 9, it is possible to electrically connect to the semiconductor devices 9A and 9B from the outside without using a TSV. For the fins 2f and the channel narrowing projections 3f shown in FIGS. 8 and 9, any of the structures shown in FIGS. 1, 2A, and 3 may be employed. The above vertical direction is used for the sake of convenience in explaining the positional relationship, and does not limit the actual mounting direction.

  All examples and conditional expressions given here are intended to help the reader understand the inventions and concepts that have contributed to the promotion of technology, such examples and It is to be construed without being limited to the conditions, and the organization of such examples in the specification is not related to the superiority or inferiority of the present invention. While embodiments of the present invention have been described in detail, it will be understood that various changes, substitutions and variations can be made thereto without departing from the spirit and scope of the invention.

Next, the embodiment will be added.
(Supplementary Note 1) A housing, a plurality of fins that are spaced apart from the ceiling surface in the housing, are spaced apart in the width direction, and that define a groove-shaped microchannel, and a plurality of fins A projection that is bridged over the upper ends of the plurality of fins across the middle in the longitudinal direction and protrudes downward from the ceiling surface; an inflow side manifold that is connected to one end of the plurality of fins in the housing; and An outflow side manifold connected to the other ends of the plurality of fins in the case; a heat exchange fluid inlet formed on at least one of the bottom surface or the ceiling surface of the case and connected to the inflow side manifold; and the case A heat exchange fluid outlet formed on at least one of the bottom surface or the ceiling surface and connected to the outflow side manifold, and a heat exchange object disposition region disposed on the back surface of the bottom surface. Microchannel heat exchanger apparatus.
(Additional remark 2) The microchannel heat exchange apparatus of Additional remark 1 characterized by the front surface and rear surface of the said protrusion being a taper surface where a space | interval becomes narrow toward the said fin from the said ceiling surface.
(Supplementary note 3) The microchannel heat exchange device according to Supplementary note 1 or 2, wherein the plurality of fins include short fins that are locally formed in a large number below the protrusions.
(Supplementary note 4) The microchannel heat exchange device according to any one of supplementary notes 1 to 3, wherein the fin and the protrusion are connected by fitting.
(Supplementary note 5) The microchannel heat exchange device according to any one of supplementary notes 1 to 4, wherein vias penetrating vertically are formed in the fins and the protrusions.
(Supplementary note 6) The microchannel heat exchange device according to any one of supplementary notes 1 to 5, wherein the casing having the plurality of fins and the protrusions is arranged in a plurality of stages so as to overlap each other.
(Additional remark 7) The said housing | casing piled up and down opposes the surface by the side of the said ceiling surface, and the said heat exchange target object arrangement | positioning area | regions are piled up in the mutually reverse direction, The micro of Additional remark 6 characterized by the above-mentioned. Channel heat exchange device.
(Supplementary note 8) The microchannel heat exchange device according to supplementary note 6, wherein the plurality of casings are arranged such that the ceiling surface and the bottom surface are arranged in the same direction and are joined to each other on the outer peripheral surface via a spacer.
(Supplementary note 9) An inflow pipe is directly or indirectly connected to the heat exchange fluid inflow port, and an outflow pipe is directly or indirectly connected to the heat exchange fluid outflow port. The microchannel heat exchange device according to any one of appendix 8.
(Supplementary Note 10) The supplementary note 1 is characterized in that the bottom surface of the casing is formed in a concave portion of a substrate, and the ceiling surface of the casing is formed in a lid body that is overlapped and joined on the substrate. Or the microchannel heat exchange device according to any one of Supplementary Note 9.
(Supplementary note 11) An electronic apparatus comprising the microchannel heat exchange device according to any one of supplementary notes 1 to 10, and an electronic component joined to the heat exchange object placement surface of the microchannel heat exchange device. .

DESCRIPTION OF SYMBOLS 1 Microchannel heat exchange apparatus 1A, 1B, 1C Case 2, 2A, 2B, 2C Board | substrate 2a Wall part 2b Inflow side manifold 2c Outflow side manifold 2d Fitting groove 2f, 2h Fin 3, 3A, 3B Lid 3a Wall part 3b Inlet 3c Outlet 3d Insertion protrusion 3e Ceiling surface 3f Channel constriction protrusion 3g Groove 4 Inflow pipe 5 Outflow pipe

Claims (7)

An insulating housing;
A plurality of insulating fins that are spaced apart from the ceiling surface within the housing, are formed on the bottom surface at intervals in the width direction, and divide the groove-shaped microchannels;
An insulative protrusion formed across the middle of the plurality of fins on the upper ends of the plurality of fins and protruding downward from the ceiling surface;
An inflow side manifold connected to one end of the plurality of fins in the housing;
An outflow side manifold connected to the other ends of the plurality of fins in the housing;
A heat exchange fluid inlet formed on at least one of the bottom surface or the ceiling surface of the housing and connected to the inlet manifold;
A heat exchange fluid outlet formed on at least one of the bottom surface or the ceiling surface of the housing and connected to the outflow side manifold;
The arrangement surface of the heat exchange object arranged on the back surface of the bottom surface,
A via that penetrates through the fin and the projection and is connected to the heat exchange object;
A microchannel heat exchange device comprising:   2. The microchannel heat exchange device according to claim 1, wherein a front surface and a rear surface of the protrusion are tapered surfaces having a space that decreases from the ceiling surface toward the fin.   The microchannel heat exchange device according to claim 1 or 2, wherein the plurality of fins include short fins that are locally formed in a large number under the protrusions.   The microchannel heat exchange device according to any one of claims 1 to 3, wherein the fin and the protrusion are connected by fitting. 5. The microchannel heat exchange device according to claim 1, wherein the casing having the plurality of fins and the protrusions is arranged in a plurality of stages in an overlapping manner. The microchannel heat exchange device according to any one of claims 1 to 5, wherein wiring is formed on a surface of the casing. The microchannel heat exchange device according to any one of claims 1 to 6 ,
An electronic component joined to the arrangement surface of the heat exchange object of the microchannel heat exchange device;
Electronic equipment having

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