JP6061637B2 - Information processing method and program - Google Patents

Description

The present invention relates to an information processing method, a program, and an apparatus having a recording medium on which the program is recorded. In particular, an information processing method for displaying an image including processed information on an information processing apparatus including a display unit, a program for displaying an image including processed information on an information processing apparatus including a display unit, and the program recorded The present invention relates to an information processing apparatus having a recording medium.

A technique for reducing power consumption by reducing a refresh rate when displaying a still image on a display unit is known.

JP 2011-186449 A

The information processing device processes the input information and outputs the processed information to an output device such as a display unit.

The display unit generally includes a pixel region having a plurality of pixels, and displays an image in the pixel region. Then, by rewriting the pixels at a frequency exceeding, for example, 60 Hz (also referred to as refreshing), still images and moving images are displayed.

Those who use the information processing apparatus use and observe images rewritten at such a frequency (also referred to as a refresh rate) for a long time, which puts a burden on the user's eyes and makes the user's eyes tired. .

One embodiment of the present invention has been made under such a technical background. An object of one embodiment of the present invention is to provide a novel information processing method. Another object is to provide a new program.

One embodiment of the present invention is an information processing method for displaying an image including information processed by an arithmetic device in the following steps.
In the first step, the first still image including the information processed by the arithmetic unit is provided with a plurality of pixels provided with a resolution of 150 ppi or more that does not include light having a wavelength shorter than 420 nm in the display light. Is displayed as a display image in a window of a display unit that can be displayed in a gentle manner.
In the second step, a display feed command including direction and speed information is input to the arithmetic unit using the input means.
In the third step, 1 is added to the counter value after the elapse of a predetermined waiting time, and the display image continues when the distance obtained from the product of the speed, the waiting time and the counter value is equal to or larger than the predetermined distance. The second still image is displayed on the window as a display image, and the counter is reset.

Another embodiment of the present invention is an information processing method for displaying an image including information processed by an arithmetic device in the following steps.
In the first step, the first still image including the information processed by the arithmetic unit is provided with a plurality of pixels provided with a resolution of 150 ppi or more that does not include light having a wavelength shorter than 420 nm in the display light. Is displayed as a display image in a window of a display unit that can be displayed in a gentle manner.
In the second step, a display feed command including direction and speed information is input to the arithmetic unit using the input means.
In the third step, the first counter and the second counter are reset, and the length of the window in the display feed direction and the waiting time are acquired.
In the fourth step, 1 is added to the values of the first counter and the second counter, the speed of the display feed command is reduced according to the value of the second counter, and the standby time is waited.
In the fifth step, the distance is calculated by obtaining the product of the speed of the display advance command, the waiting time and the value of the first counter.
In the sixth step, the process proceeds to the seventh step when the distance is equal to or longer than the length in the display feed direction of the window, and the process proceeds to the fourth step otherwise.
In the seventh step, the first counter is reset, and a second still image continuous to the display image that is separated from the display image in the direction of the display advance command is displayed on the window as the display image.
In the eighth step, if a display still command is input, the process proceeds to the ninth step, otherwise the process proceeds to the fourth step.
In the ninth step, a display image is displayed.

Further, one embodiment of the present invention is the above information processing method in which a display image is gently switched from a display image to a second still image continuous to the display image.

One embodiment of the present invention is the above information processing method for displaying a display image at a frequency of 1 Hz or less.

According to the information processing method of one aspect of the present invention, information that cannot be displayed on one screen processed by the arithmetic device is divided into a plurality of still images, and the divided information is sequentially displayed as a display image on a screen or a window. . As a result, the user of the information processing apparatus does not need to find the target information from the moving display by following the moving display, and the burden on the user's eyes is reduced. It is reduced. As a result, it is possible to provide a novel information processing method capable of gently displaying an image including information processed by the arithmetic device.

Another embodiment of the present invention is an information processing including a display portion that includes a plurality of pixels that do not include light with a wavelength shorter than 420 nm in display light and has a resolution of 150 ppi or more and that can perform an eye-friendly display. To the device,
A first step of displaying a first still image including information processed by the computing device as a display image on a window of the display unit;
A second step of inputting a display feed command including direction and speed information to the arithmetic unit using the input means;
The counter value is incremented by 1 after the elapse of a predetermined waiting time, and the second still image that is continuous with the first still image when the distance obtained from the product of the speed, the waiting time, and the counter value is equal to or greater than the predetermined distance. A third step of displaying an image on a window as a display image and resetting a counter.

According to the information processing method of one aspect of the present invention, information that cannot be displayed on one screen processed by the arithmetic device is divided into a plurality of pieces, and the divided information is displayed as a still image on the screen or the window. As a result, the user of the information processing apparatus does not need to find the target information from the moving display by following the moving display, and the burden on the user's eyes is reduced. It is reduced. As a result, it is possible to provide a new program that can display an image including information processed by the arithmetic device gently to the eyes.

According to one embodiment of the present invention, a novel information processing method can be provided. Alternatively, a new program can be provided.

The block diagram explaining the structure of the information processing apparatus which concerns on embodiment FIG. 6 is a schematic diagram illustrating an information processing method using the information processing apparatus according to the embodiment. 9 is a flowchart for explaining an information processing method using the information processing apparatus according to the embodiment. 9 is a flowchart for explaining a modification of the information processing method using the information processing apparatus according to the embodiment. 9 is a flowchart for explaining a modification of the information processing method using the information processing apparatus according to the embodiment. 8A and 8B illustrate a structure of a display portion according to an embodiment. It is a figure explaining fatigue of the eyes of a nervous system. It is a figure explaining the fatigue | exhaustion of eyes of a muscular system. FIG. 6 is a block diagram illustrating a structure of an information processing device having a display function according to an embodiment. 6A and 6B illustrate a structure of a display portion of an information processing device having a display function according to an embodiment. 6A and 6B illustrate a structure of a display portion of an information processing device having a display function according to an embodiment. FIG. 6 is a circuit diagram illustrating an information processing device having a display function according to an embodiment. 3A and 3B illustrate a structure example of a transistor according to an embodiment. 4A to 4D illustrate an example of a method for manufacturing a transistor according to an embodiment. 3A and 3B illustrate a structure example of a transistor according to an embodiment. 3A and 3B illustrate a structure example of a transistor according to an embodiment. 4A and 4B illustrate a touch panel according to an embodiment. 4A and 4B illustrate a touch panel according to an embodiment. 6A and 6B illustrate an electronic device having a storage medium in which a program for executing an information processing method according to an embodiment is recorded. The schematic diagram explaining the method of displaying the information which the conventional information processing apparatus processed on the display part.

<Examples of problems that one embodiment of the present invention can solve>
FIG. 20 is a schematic diagram illustrating a conventional method for displaying information processed by the information processing apparatus on a display unit. A problem that can be solved by one embodiment of the present invention will be described with reference to FIG.

Since the pixel region included in the display unit of the information processing device is finite, it may not be possible to display all of the image 210 including the information 200 processed by the information processing device (see FIG. 20A-2). In this specification, an area in which information processed by the information processing apparatus is displayed on a display unit is referred to as a “window”.

In such a case, a person who uses the information processing apparatus may process the information processing apparatus and select a part from the information 200, and the information processing apparatus may display the selected area on the window 220.

As an example of a method for displaying information divided into a plurality of pieces in a state in which the context is maintained (also referred to as a continuous state), a state in which a part of the scroll in which the information is written is expanded (a band or a scroll) (It can be said that it is possible) and display it in a window (see FIG. 20B-1). The user of the information processing device sends the band-shaped information displayed in the window 220 in order (also referred to as scrolling), so that the information 200 that cannot be displayed on one screen can be viewed or used while maintaining the previous and subsequent relationships. can do. Note that FIG. 20B-2 is a schematic diagram illustrating a state in which the screen is scrolled in a direction in which FIG. 20B is advanced by one line. A person using the information processing device visually recognizes the range of the window 220. The hatched portion cannot be visually recognized.

As described above, when there is a portion where the processed information is not displayed in one screen, there is a problem that the user of the information processing apparatus cannot look down on the information. As a result, the user needs to select a part of the processed information 200 and search for the target information from the displayed image.

For example, when the processed information is displayed in a strip shape on the window of the display unit, the user sequentially moves (scrolls) the information displayed in the strip shape, follows the moving display, and uses the information as a target. Find information.

In this work, the user of the information processing apparatus always follows the image displayed on the screen or the window with his / her eyes, so that he / she overuses his eyes and feels eye fatigue or eye strain.

<One Embodiment of the Present Invention>
Therefore, in order to solve the above problems, one embodiment of the present invention focuses on an information processing method that displays information that cannot be displayed on one screen without scrolling. The embodiment described below includes an information processing method for displaying information processed by the information processing apparatus on a display unit.

An information processing method of one embodiment of the present invention includes a display portion that includes a plurality of pixels that do not include light with a wavelength shorter than 420 nm in display light and has a resolution of 150 ppi or more, an arithmetic device, and input means. A processing device is used.

A first step of displaying a first still image including information processed by the arithmetic unit in the window as a display image; a second step of inputting a display feed command including information on direction and speed; And a third step of displaying a second image that is continuous with the display image when the distance obtained from the product of the speed and the standby time is equal to or greater than a predetermined distance after the standby time has elapsed. This is an information processing method for displaying an image including processed information.

According to the information processing method of one aspect of the present invention, information that cannot be displayed on one screen processed by the arithmetic device is divided into a plurality of still images, and the divided information is sequentially displayed as a display image on a screen or a window. . As a result, the user of the information processing apparatus does not need to find the target information from the moving display by following the moving display, and the burden on the user's eyes is reduced. It is reduced. As a result, it is possible to provide a novel information processing method capable of gently displaying an image including information processed by the arithmetic device. Alternatively, it is possible to provide a new program that can display an image including information processed by the arithmetic device gently.

Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in structures of the invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated.

(Embodiment 1)
In this embodiment, an information processing method of the information processing device of one embodiment of the present invention will be described with reference to FIGS.

FIG. 1 is a block diagram illustrating a configuration of an information processing device of one embodiment of the present invention.

FIG. 2 is a schematic diagram illustrating an information processing method using the information processing apparatus of one embodiment of the present invention.

FIG. 3 is a flowchart illustrating an information processing method using the information processing apparatus of one embodiment of the present invention.

FIG. 4 is a flowchart illustrating a modification example of the information processing method using the information processing apparatus of one embodiment of the present invention.

<Information processing device>
The information processing apparatus 10 includes an arithmetic device 11, a storage device 12, and a transmission path 14 (see FIG. 1). The transmission path 14 connects the arithmetic device 11, the storage device 12, and the input / output interface 15 to each other and transmits information. Note that these configurations cannot be clearly separated, and one configuration may serve as another configuration or may include a part of another configuration. For example, the touch panel is a display unit and an input unit.

The input / output device 20 is connected to the transmission line 14 via the input / output interface 15. The input / output device 20 is a device for inputting information from the outside of the information processing device 10 or outputting information to the outside of the information processing device 10.

Examples of the input / output device 20 include a communication device, a network connection device, or a writable external storage device such as a hard disk or a removable memory.

Examples of the input means 21 include human interface devices such as a keyboard, mouse or touch panel, cameras such as digital cameras and digital video cameras, and read-only external storage devices such as scanners, CDROMs and DVDROMs.

A user of the information processing apparatus 10 can input a display advance command from the input unit 21. In this specification, an image including other information continuous to the information is displayed in a state where an image including a part of the information processed by the arithmetic unit 11 is displayed in the window 220 of the display unit 22. The command is called a display feed command.

For example, when the second image including the second information is continuous with the first image including the first information, the second image is displayed in a state where the first image is displayed in the window 220. A command to this effect is called a display advance command. When the display advance command is executed, the second image is displayed in the window 220.

As the output device, a speaker, a printer, and the like can be connected in addition to the display unit 22.

<Display section>
The information processing apparatus 10 according to one embodiment of the present invention includes a display unit 22. In particular, the display unit 22 does not include light having a wavelength shorter than 420 nm, preferably light having a wavelength shorter than 440 nm, in the display light. The display region may include a plurality of pixels provided with a resolution of 150 ppi or more, preferably 200 ppi or more. As a result, it is possible to perform display that is kind to the eyes. Note that display light in this specification refers to light emitted or reflected by a display unit of an information processing device toward a user in order to display an image.

Since the display light of the display portion according to one embodiment of the present invention reaches the retina without being absorbed by the cornea or the lens of the eye, light having a long-term influence on the retina or a negative effect on the circadian rhythm is generated. Not included. Specifically, the light for displaying an image does not include light (also referred to as UVA) having a wavelength of 400 nm, preferably 420 nm, more preferably 440 nm or less.

In addition, the definition of a pixel included in the display portion of one embodiment of the present invention is 150 ppi, preferably 200 ppi or more, and the size of one pixel is small. Thereby, a precise and smooth display can be obtained. As a result, the muscles of the ciliary body of the eye can be easily focused, and the fatigue of the muscular system of the user's eyes is reduced.

<Information processing method>
The information processing method described in the present embodiment uses the information processing device 10 including the display unit 22 described above to display an image including information processed by the arithmetic device 11 gently by the following steps.

<< First Step >>
In the first step, a first still image including information processed by the arithmetic unit is displayed as a display image in a window (FIG. 3 (S-1)).

FIG. 2A-1 schematically shows a state in which a part of the information processed by the arithmetic unit 11 is displayed on the window 220 of the display unit 22. A display image displayed in the window 220 is illustrated in FIG.

The page number 220p and the indicator 220i are indices indicating the position of the entire display image information displayed in the window 220. Specifically, the page number 220p is the first page, and the indicator 220i is in the first half of the whole.

In the present embodiment, a case where a display is sent in the vertical direction of the window 220 will be described. Although the vertical length Y of the window 220 is illustrated and the vertical length Y of the window 220 is set to a predetermined distance, the present invention is not limited to this.

<< Second Step >>
In the second step, a display feed command including information on direction and speed v is input from the input means (S-2). The display can also be sent in the horizontal direction. In that case, the lateral length of the window 220 and the lateral speed of the display advance command may be considered.

《Third step》
In the third step, after a predetermined waiting time t has elapsed (S-3), the counter value is increased by 1 (S-4), the speed v, the waiting time t and the product of the counter (v × t × If the distance obtained from the value of the counter is less than the predetermined distance Y (S-5), it waits for a predetermined time again. Or when the said distance is more than the predetermined distance Y (S-5), the next image continuous with a display image is displayed (S-6).

FIG. 2B shows a state in which an image including the next information following the image including the information displayed in the first step is displayed in the window 220. In FIG. 2 (B-1), the information displayed at the bottom of the window 220 in FIG. 2 (A-1) is moving to a non-display area at the top of the window in FIG. 2 (A-1). Is shown.

Further, FIG. 2B-2 schematically shows that the page number 220p is the second page and the indicator 220i is in the entire middle part.

The display advance command is input in a state where FIG. 2A is displayed, and a predetermined time elapses from that time until FIG. 2B is displayed. During the predetermined time, as shown in FIG. 2A, the image displayed in the window 220 is displayed as a still image that is the next image that is continuous with the image displayed in the first step.

<< Fourth Step >>
In order to measure waiting for a predetermined time, the value of the counter is set to 0 (FIG. 3 (S-7)), and it is determined whether or not an interrupt command for ending display feed is input by a display still command ( S-8).

And when continuing display advance, it progresses to the 3rd step.

According to the information processing method described in the present embodiment, information that cannot be displayed on one screen is divided into a plurality of pieces, and the divided information is displayed as a still image on a screen or a window. This eliminates the need for the user of the information processing apparatus to search for the target information from the moving display by following the moving display. As a result, it is possible to provide a novel information processing method capable of gently displaying an image including information processed by the arithmetic device.

In addition, when the distance obtained from the product of the speed and the standby time is less than the predetermined distance after the predetermined time has elapsed, the information processed by the arithmetic device is displayed as a still image. As a result, the user of the information processing apparatus only needs to find out the target information from the still image, and does not need to move the line of sight excessively. As a result, eye abuse can be prevented and eye fatigue or eye strain can be reduced.

<Modification of information processing method>
A modification of the information processing method described in this embodiment will be described with reference to FIGS.

The information processing method described in the modification of the present embodiment is common in that the information processing apparatus 10 including the display unit 22 described in the present embodiment is used.

An image including information processed by the arithmetic unit 11 is displayed gently on the eyes by the following steps.

<< First Step >>
A first still image including information processed by the arithmetic unit is displayed in the window as a display image (u-1).

<< Second Step >>
A display advance command including direction and speed information is input using the input means (u-2).

Various input methods can be applied to the direction and speed information of the display feed command depending on the input means. For example, when a touch panel is used as the input means, the direction and speed can be input by a flick operation such as playing with a finger. In addition to a drag operation using a mouse, direction and speed information can be input by rotating a mouse wheel or the like. Alternatively, the direction and speed information may be input by selecting an operation button in which the direction and speed information is set in advance.

《Third step》
The first counter and the second counter are reset, and various setting information such as the length of the window in the display feed direction and the waiting time are acquired (u-3).

The waiting time can be set to 0.01 seconds, for example. The length of the window may be the maximum length of the display unit, or may be set to a length smaller than the window that is actually displayed. For example, by setting half the length of the window that is actually displayed, the display feed interval is halved, or half of the displayed length is displayed overlapping the continuous display. It can be set as follows.

<< Fourth Step >>
1 is added to the values of the first counter and the second counter, and the waiting time is waited (u-4).

The display feed speed v may be attenuated so as to approach 0 according to the value of the second counter. When the display feed rate is gradually brought closer to 0, an operation of gradually increasing the interval at which the display image is switched to the second still image can be performed.

<< 5th step >>
The distance is calculated by obtaining the product of the speed of the display advance command, the waiting time and the value of the first counter (u-5).

<< Sixth Step >>
If the distance is greater than or equal to the length in the display feed direction of the window, the process proceeds to the sixth step, otherwise the process proceeds to the fourth step (u-6).

<< Seventh Step >>
The first counter is reset, and a second still image continuous to the display image, which is separated from the display image in the direction of the display advance command, is displayed as a display image in the window (see FIG. 5 (u-7)). .

<< Eighth Step >>
When the display still command is input, the process proceeds to the ninth step, and otherwise, the process proceeds to the fourth step (u-8).

<< Ninth Step >>
The display advance command is terminated and the display image is displayed (u-9).

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 2)
In this embodiment, an information processing method of the information processing device of one embodiment of the present invention is described with reference to FIG.

Specifically, a method for generating an image that can be displayed on the display portion of the information processing device of one embodiment of the present invention is described. In particular, when the display is performed by switching the second still image continuous to the display image from the display image on which the first still image described in the first embodiment is displayed as the next display image, the user's eyes are displayed. A friendly image switching method, an image switching method that reduces fatigue of the eyes of the user, and an image switching method that does not impose a burden on the eyes of the user will be described.

FIG. 6 is a block diagram illustrating a configuration of an information processing device to which the information processing method of one embodiment of the present invention can be applied.

<Information processing method>
One embodiment of the present invention is an information processing method described in Embodiment 1 in which a display image is gently switched from a display image on which the first still image is displayed to a second still image that is continuous with the display image. is there.

According to the information processing method of one aspect of the present invention, information that cannot be displayed on one screen processed by the arithmetic device is divided into a plurality of still images, and the divided information is sequentially displayed as a display image on a screen or a window. . In particular, in this embodiment, the display image is gradually switched. As a result, the user of the information processing apparatus does not need to find the target information from the moving display by following the moving display, and the burden on the user's eyes is reduced. It is reduced. In addition, the burden on the user's eyes when switching the display is reduced. As a result, it is possible to provide a novel information processing method capable of gently displaying an image including information processed by the arithmetic device.

If the images are quickly switched and displayed, the user may induce eye strain. For example, a moving image in which a significantly different scene is switched or a case in which a different still image is switched is included.

When switching and displaying different images, it is preferable not to switch the display instantaneously, but to switch the images slowly (quietly) and naturally.

For example, when switching the display from the first still image to the second still image, a moving image in which the first still image fades out between the first still image and the second still image and / or is displayed. It is preferable to insert a moving image in which the second still image fades in. In addition, a moving image obtained by superimposing both images may be inserted so that the second still image fades in (also referred to as crossfade) at the same time as the first still image fades out. A moving image that displays a state in which the image gradually changes to the second still image (also referred to as morphing) may be inserted.

Note that the first still image data may be displayed at a low refresh rate, the image for switching images may be displayed at a high refresh rate, and then the second still image data may be displayed at a low refresh rate. .

<Fade in, fade out>
Hereinafter, an example of a method for switching between different images A and B will be described.

FIG. 6 is a block diagram illustrating a configuration of a display unit that can perform an image switching operation. The display unit illustrated in FIG. 6 includes an arithmetic device 701, a storage device 702, a graphic unit 703, and a display unit 704.

In the first step, the arithmetic device 701 stores each data of the image A and the image B in the storage device 702 from an external storage device or the like.

In the second step, the arithmetic device 701 sequentially generates new image data based on the image data of the image A and the image B according to a preset value of the number of divisions.

In the third step, the generated image data is output to the graphic unit 703. The graphic unit 703 displays the input image data on the display unit 704.

FIG. 6B is a schematic diagram for explaining the generated image data when the images are switched in stages from the image A to the image B.

FIG. 6B shows a case where N (N is a natural number) image data is generated from image A to image B, and each piece of image data is displayed for f (f is a natural number) frame period. . Therefore, the period from the image A to the image B is f × N frames.

Here, it is preferable that the user can freely set the parameters such as N and f described above. The arithmetic device 701 acquires these parameters in advance, and generates image data in accordance with the parameters.

The i-th image data (i is an integer between 1 and N) can be generated by weighting and adding the image data of image A and the image data of image B, respectively. For example, when the luminance (gradation) when the image A is displayed is a and the luminance (gradation) when the image B is displayed is b in a certain pixel, the i-th generated image data is displayed. The luminance (gradation) c of the pixel in FIG. Note that the gradation refers to a light and dark stage displayed by the display unit. An image having only two stages of white and black can be referred to as an image having two gradations. For example, a display unit of a conventional personal computer has subpixels that display red, green, and blue. Each sub-pixel receives a signal for displaying 256 levels of light and shade.

By switching from the image A to the image B using the image data generated by such a method, it is possible to switch a discontinuous image naturally (slowly).

In Equation 1, the case where a = 0 for all pixels corresponds to a fade-in in which the black image is gradually switched to the image B. The case of b = 0 for all the pixels corresponds to a fade-out in which the image A is gradually switched to a black image.

In the above description, the method of switching the images by temporarily overlapping the two images has been described. However, a method of not overlapping the images may be used.

When the two images are not overlapped, when switching from the image A to the image B, a black image may be inserted between them. At this time, the image switching method as described above may be used when transitioning from the image A to the black image, or when transitioning from the black image to the image B, or both. The image inserted between the image A and the image B may be not only a black image but also a single color image such as a white image, or a multicolor image different from the image A and the image B may be used. May be.

By inserting another image, especially a single color image such as a black image, between the images A and B, the user can feel the switching timing of the image more naturally, and stress the user. Images can be switched without feeling.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 3)
In this embodiment, a structure of an information processing device to which the information processing method of one embodiment of the present invention can be applied is described with reference to FIGS.

Specifically, the G signal for selecting a pixel is output at a frequency of 30 Hz (30 times per second) or more, preferably at a frequency of 60 Hz (60 times per second) or more and less than 960 Hz (960 times per second). 1 mode and a frequency of 11.6 μHz (once a day) or higher and less than 0.1 Hz (0.1 times per second), preferably 0.28 mHz (once per hour) or higher and 1 Hz (per second) An information processing apparatus including the second mode for outputting at a frequency less than (one time) will be described.

When a still image is displayed using this information processing apparatus, the refresh rate can be less than 1 Hz, preferably 0.2 Hz or less, a display that is gentle to the user's eyes, a display that reduces fatigue of the user's eyes, It is possible to display without burdening the eyes of the user. Further, the display image can be refreshed at an optimum frequency according to the property of the image displayed on the display unit. Specifically, a still image with less flicker can be displayed by performing refreshing at a lower frequency than when moving images are displayed smoothly. In addition, there is an effect of reducing power consumption.

FIG. 7 is a diagram for explaining fatigue of the eyes of the nervous system.

FIG. 8 is a diagram for explaining eye fatigue of the muscular system.

FIG. 9 is a block diagram illustrating a structure of an information processing device having a display function of one embodiment of the present invention.

10A and 10B are a block diagram and a circuit diagram illustrating a structure of a display portion of the information processing device having a display function of one embodiment of the present invention.

Here, eye fatigue will be described. There are two types of eye fatigue: nervous system fatigue and muscular fatigue.

Nervous system fatigue is caused by continually looking at the light emitted from the display unit or the blinking screen for a long time, and the brightness stimulates the eye's retina, nerve, or brain to cause fatigue. A phenomenon in which a fluorescent lamp or a display unit of a conventional display device blinks in small increments is called flicker. Such flicker causes fatigue of the nervous system.

The fatigue of the muscular system is caused by overworking the ciliary muscle used for focus adjustment.

FIG. 7A is a schematic diagram showing display on a conventional display unit. In the display on the conventional display unit, the image is rewritten 60 times per second. Continuing to watch such a screen for a long time may irritate the retina, nerve or brain of the user's eye and cause eye fatigue.

FIG. 7B is a schematic diagram illustrating display of the information processing device described in this embodiment. The information processing device described in this embodiment can change a G signal for selecting a pixel. In particular, by using a transistor with extremely small off-state current for the pixel portion of the display portion, the frame frequency can be lowered while suppressing the occurrence of flicker. For example, since the image can be rewritten once every 5 seconds, the same image can be seen, and flickering of the screen visually recognized by the user is reduced. Thereby, the stimulation of the retina, nerve or brain of the user's eye is reduced, and nervous system fatigue is reduced.

Note that as the transistor with extremely low off-state current, a transistor using an oxide semiconductor, for example, a transistor using a CAAC-OS is preferable.

Also, as shown in FIG. 8A, when the size of one pixel is large (for example, when the definition is less than 150 ppi), the characters displayed on the display unit of the display unit are blurred. If you keep looking at the blurred characters displayed on the display for a long time, the ciliary muscles are constantly trying to focus, but it is difficult to focus. There was a risk of overloading.

On the other hand, as shown in FIG. 8B, in the display according to one embodiment of the present invention, the size of one pixel is small, and high-definition display with a definition of 150 ppi, preferably 200 ppi or more is possible. A precise and smooth display can be obtained. This makes it easier for the ciliary muscles to focus, thus reducing fatigue of the user's muscular system. Note that the definition can be expressed using pixel density (ppi: pixel per inch). Pixel density is the number of pixels per inch. A pixel is a unit constituting an image.

A method for quantitatively measuring eye fatigue has been studied. For example, critical fusion frequency (CFF: Critical Flicker (Fusion) Frequency) is known as an evaluation index of fatigue of the nervous system. Further, as an evaluation index of muscular fatigue, adjustment time, adjustment near point distance, and the like are known.

Other methods for evaluating eye fatigue include electroencephalography, thermography, measurement of the number of blinks, evaluation of tear volume, evaluation of the contraction response rate of the pupil, and a questionnaire for investigating subjective symptoms.

<1. Configuration of information processing apparatus>
In this embodiment, the information processing device 600 having a display function described with reference to FIGS. 9A and 9B holds the pixel portion 631 and the first driving signal (also referred to as S signal) 633_S that is input, and the S signal 633_S. The pixel circuit 634 including a display element 635 that displays an image on the pixel portion 631 according to the above, a first driver circuit (also referred to as an S driver circuit) 633 that outputs an S signal 633_S to the pixel circuit 634, and a pixel circuit 634 And a second driving circuit (also referred to as a G driving circuit) 632 that outputs a second driving signal (also referred to as a G signal) 632_G to be selected to the pixel circuit 634.

The G driving circuit 632 outputs the G signal 632_G to the pixel at a frequency of 30 times or more per second, preferably at a frequency of 60 times or more and less than 960 times per second, and once a day. The second mode for outputting at a frequency of less than 0.1 times per second, preferably at a frequency of once per hour or more and less than once per second is provided.

Note that the G drive circuit 632 switches between the first mode and the second mode in accordance with the input mode switching signal.

In addition, the pixel circuit 634 is provided in the pixel 631p, a plurality of pixels 631p are provided in the pixel portion 631, and the pixel portion 631 is provided in the display portion 630.

An information processing apparatus 600 having a display function includes an arithmetic device 620. The arithmetic device 620 outputs a primary control signal 625_C and a primary image signal 625_V.

The display unit 630 includes a control unit 610, and the control unit 610 controls the S drive circuit 633 and the G drive circuit 632.

In the case where a liquid crystal element is used for the display element 635, the light supply portion 650 is provided in the display portion 630. The light supply unit 650 supplies light to the pixel portion 631 provided with a liquid crystal element and functions as a backlight.

The information processing device 600 having a display function can change the frequency of selecting one from the plurality of pixel circuits 634 provided in the pixel portion 631 using the G signal 632_G output from the G drive circuit 632. As a result, an information processing apparatus having a display function in which eye fatigue that can be given to a person who uses the information processing apparatus 600 is reduced can be provided.

In the drawings attached to the present specification, the components are classified by function and the block diagram is shown as an independent block. However, it is difficult to completely separate actual components by function. A component may be involved in multiple functions.

Note that in this specification, the terms “source” and “drain” of a transistor interchange with each other depending on the polarity of the transistor or the potential applied to each terminal. In general, in an n-channel transistor, a terminal to which a low potential is applied is called a source, and a terminal to which a high potential is applied is called a drain. In a p-channel transistor, a terminal to which a low potential is applied is called a drain, and a terminal to which a high potential is applied is called a source. In this specification, for the sake of convenience, the connection relationship between transistors may be described on the assumption that the source and the drain are fixed. However, the names of the source and the drain are actually switched according to the above-described potential relationship. .

In this specification, the source of a transistor means a source region that is part of a semiconductor film functioning as an active layer or a source electrode connected to the semiconductor film. Similarly, a drain of a transistor means a drain region that is part of the semiconductor film or a drain electrode connected to the semiconductor film. The gate means a gate electrode.

In this specification, the state where the transistors are connected in series means, for example, a state where only one of the source and the drain of the first transistor is connected to only one of the source and the drain of the second transistor. To do. In addition, the state where the transistors are connected in parallel means that one of the source and the drain of the first transistor is connected to one of the source and the drain of the second transistor, and the other of the source and the drain of the first transistor is connected. It means a state of being connected to the other of the source and the drain of the second transistor.

In this specification, the connection means an electrical connection, and corresponds to a state where current, voltage, or potential can be supplied or transmitted. Therefore, the connected state does not necessarily indicate a directly connected state, and a wiring, a resistor, a diode, a transistor, or the like is provided so that current, voltage, or potential can be supplied or transmitted. The state of being indirectly connected through a circuit element is also included in the category.

In this specification, even when independent components on the circuit diagram are connected to each other, in practice, for example, when a part of the wiring functions as an electrode, In some cases, it also has the functions of the components. In this specification, the term “connection” includes a case where one conductive film has functions of a plurality of components.

Hereinafter, individual elements included in the information processing device having the display function of one embodiment of the present invention will be described.

<2. Arithmetic unit>
The arithmetic device 620 generates a primary image signal 625_V and a primary control signal 625_C.

Further, the arithmetic device 620 generates a primary control signal 625_C including a mode switching signal.

For example, the arithmetic device 620 may output the primary control signal 625_C including the mode switching signal in response to the image switching signal 500_C input from the input unit 500.

When the image switching signal 500_C is input from the input unit 500 to the G driving circuit 632 in the second mode via the control unit 610, the G driving circuit 632 switches from the second mode to the first mode, The G signal is output once or more, and then the mode is switched to the second mode.

For example, when the input unit 500 detects a page turning operation, the input unit 500 outputs an image switching signal 500_C to the arithmetic device 620.

The arithmetic device 620 generates a primary image signal 625_V including a page turning operation, and outputs the primary image signal 625_V together with the primary control signal 625_C including the image switching signal 500_C.

The control unit 610 outputs the image switching signal 500_C to the G driving circuit 632 and outputs the secondary image signal 615_V including the page turning operation to the S driving circuit 633.

The G driving circuit 632 switches from the second mode to the first mode, and rewrites the G signal 632_G at a speed that does not allow the observer to identify the change in the image that changes every time the signal is rewritten.

On the other hand, the S drive circuit 633 outputs the S signal 633_S generated from the secondary image signal 615_V including the page turning operation to the pixel circuit 634.

Accordingly, since the pixel 631p can display a large number of frame images including the page turning operation in a short time, the secondary image signal 615_V including the smooth page turning operation can be displayed.

Further, the arithmetic device 620 determines whether the primary image signal 625_V output to the display unit 630 is a moving image or a still image, and when the primary image signal 625_V is a moving image, a switching signal for selecting the first mode is In the case of a still image, the calculation device 620 may output a switching signal for selecting the second mode.

Note that as a method of determining whether a moving image is a still image, when a difference between signals of one frame included in the primary image signal 625_V and frames before and after it is larger than a predetermined difference, What is necessary is just to distinguish with a still image at the following times.

In addition, when the second mode is switched to the first mode, the G signal 632_G may be output a predetermined number of times one or more times and then switched to the second mode.

<3. Control unit>
The controller 610 outputs a secondary image signal 615_V generated from the primary image signal 625_V (see FIG. 9). Note that the primary image signal 625_V may be directly input to the display portion 630.

The controller 610 generates a secondary control signal 615_C such as a start pulse signal SP, a latch signal LP, and a pulse width control signal PWC using a primary control signal 625_C including a synchronization signal such as a vertical synchronization signal and a horizontal synchronization signal. , And a function of supplying to the display portion 630. Note that the secondary control signal 615_C also includes a clock signal CK and the like.

Further, an inversion control circuit may be provided in the control unit 610, and the control unit 610 may have a function of inverting the polarity of the secondary image signal 615_V in accordance with the timing notified by the inversion control circuit. Specifically, inversion of the polarity of the secondary image signal 615_V may be performed in the control unit 610, or may be performed in the display unit 630 in accordance with a command from the control unit 610.

The inversion control circuit has a function of determining the timing at which the polarity of the secondary image signal 615_V is inverted using a synchronization signal. The illustrated inversion control circuit includes a counter and a signal generation circuit.

The counter has a function of counting the number of frame periods using the pulse of the horizontal synchronization signal.

The signal generation circuit uses the information on the number of frame periods obtained by the counter to perform timing for inverting the polarity of the secondary image signal 615_V so as to invert the polarity of the secondary image signal 615_V for each of a plurality of consecutive frame periods. Is notified to the control unit 610.

<4. Display>
The display portion 630 includes a pixel portion 631 having a display element 635 in each pixel, and drive circuits such as an S drive circuit 633 and a G drive circuit 632. The pixel portion 631 includes a plurality of pixels 631p provided with a display element 635 (see FIG. 9).

The secondary image signal 615_V input to the display portion 630 is given to the S drive circuit 633. The power supply potential and the secondary control signal 615_C are supplied to the S drive circuit 633 and the G drive circuit 632.

The secondary control signal 615_C controls the operation of the start pulse signal SP for the S drive circuit, the clock signal CK for the S drive circuit, the latch signal LP, and the G drive circuit 632 that controls the operation of the S drive circuit 633. A start pulse signal SP for the G driving circuit, a clock signal CK for the G driving circuit, a pulse width control signal PWC, and the like are included.

An example of the structure of the display portion 630 is illustrated in FIG.

A display portion 630 illustrated in FIG. 10A includes a pixel portion 631, a plurality of pixels 631p, a plurality of scanning lines G for selecting the pixels 631p for each row, and a secondary image on the selected pixel 631p. A plurality of signal lines S for supplying an S signal 633_S generated from the signal 615_V is provided.

The input of the G signal 632_G to the scanning line G is controlled by the G driving circuit 632. The input of the S signal 633_S to the signal line S is controlled by the S drive circuit 633. The plurality of pixels 631p are connected to at least one of the scanning lines G and at least one of the signal lines S, respectively.

Note that the type and number of wirings provided in the pixel portion 631 can be determined by the configuration, number, and arrangement of the pixels 631p. Specifically, in the case of the pixel portion 631 illustrated in FIG. 10A, x columns × y rows of pixels 631p are arranged in a matrix, and the signal lines S1 to Sx and the scan lines G1 to Gy are included. The case where it is arranged in the pixel portion 631 is illustrated.

<4-1. Pixel>
Each pixel 631p includes a display element 635 and a pixel circuit 634 including the display element 635.

<4-2. Pixel circuit>
In this embodiment, as an example of the pixel circuit 634, a structure in which the liquid crystal element 635LC is applied to the display element 635 is illustrated in FIG.

The pixel circuit 634 includes a transistor 634t that controls supply of the S signal 633_S to the liquid crystal element 635LC. An example of a connection relation between the transistor 634t and the display element 635 will be described.

The gate of the transistor 634t is connected to any one of the scanning line G1 to the scanning line Gy. One of a source and a drain of the transistor 634t is connected to any one of the signal lines S1 to Sx, and the other of the source and the drain of the transistor 634t is connected to the first electrode of the display element 635.

Note that the pixel 631p includes other elements such as a transistor, a diode, a resistor, a capacitor, and an inductor, as well as a capacitor 634c for holding a voltage between the first electrode and the second electrode of the liquid crystal element 635LC. You may have a circuit element.

A pixel 631p illustrated in FIG. 10B uses one transistor 634t as a switching element that controls input of the S signal 633_S to the pixel 631p. However, a plurality of transistors functioning as one switching element may be used for the pixel 631p. When a plurality of transistors function as one switching element, the plurality of transistors may be connected in parallel, may be connected in series, or may be connected in combination of series and parallel. Good.

Note that the length of the capacitor 634c may be adjusted as appropriate. For example, in the second mode described later, in the case where the S signal 633_S is held for a relatively long period (specifically, 1/60 sec or more), the capacitor 634c is provided. Further, the capacitance of the pixel circuit 634 may be adjusted by using a configuration other than the capacitor 634c. For example, the capacitor element may be substantially formed by a structure in which the first electrode and the second electrode of the liquid crystal element 635LC are provided to overlap each other.

Note that the pixel circuit 634 can be used by selecting a structure in accordance with the type of the display element 635 or the driving method.

<4-2a. Display element>
The liquid crystal element 635LC includes a liquid crystal layer including a first electrode, a second electrode, and a liquid crystal material to which a voltage between the first electrode and the second electrode is applied. In the liquid crystal element 635LC, the alignment of liquid crystal molecules changes according to the value of the voltage applied between the first electrode and the second electrode, and the transmittance changes. Therefore, the display element 635 can display grayscale by controlling the transmittance with the potential of the S signal 633_S.

Note that the display element 635 is not limited to the liquid crystal element 635LC, and various display elements such as an OLED element that generates luminescence (electroluminescence) when an electric field is applied thereto and electronic ink using electrophoresis can be used.

<4-2b. Transistor>
The transistor 634t controls whether or not to apply the potential of the signal line S to the first electrode of the display element 635. A predetermined reference potential Vcom is applied to the second electrode of the display element 635.

Note that a transistor including an oxide semiconductor can be used as a transistor suitable for an information processing device having a display function to which the driving method of the information processing device having a display function of one embodiment of the present invention can be applied. Embodiment 7 can be referred to for details of the transistor including an oxide semiconductor.

<5. Light supply section>
The light supply unit 650 is provided with a plurality of light sources. The control unit 610 controls driving of the light source included in the light supply unit 650.

As a light source of the light supply unit 650, a cold cathode fluorescent lamp, a light emitting diode (LED), an OLED element that generates luminescence (electroluminescence) when an electric field is applied, and the like can be used.

In particular, a configuration in which the intensity of blue light emitted from the light source is weaker than the intensity of light of other colors is preferable. The blue light contained in the light emitted from the light source reaches the retina without being absorbed by the cornea or the lens of the eye, so long-term effects on the retina (for example, age-related macular degeneration) or until midnight The adverse effect on circadian rhythm (Circadian rhythm) when exposed to blue light can be reduced. Specifically, a light source containing no light (also referred to as UVA) having a wavelength of 400 nm, preferably 420 nm, more preferably 440 nm or less is preferable.

<6. Input means>
As the input unit 500, a touch panel, a touch pad, a mouse, a joystick, a trackball, a data glove, an imaging device, or the like can be used. The arithmetic device 620 can associate the electric signal input from the input unit 500 with the coordinates of the display unit. Thereby, the user can input a command for processing information displayed on the display unit.

Information input by the user from the input unit 500 includes, for example, a drag command for changing the display position of the image displayed on the display unit, and a swipe to display the next image by sending the displayed image. In addition to commands, commands for scrolling to send strip-shaped images in sequence, commands for selecting specific images, commands for pinching in and pinching out to change the display size of images, commands for inputting handwritten characters And so on.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 4)
In this embodiment, an example of a method for driving the display portion of the information processing device described in Embodiment 3 will be described with reference to FIGS.

Specifically, the G signal for selecting a pixel is output at a frequency of 30 Hz (30 times per second) or more, preferably at a frequency of 60 Hz (60 times per second) or more and less than 960 Hz (960 times per second). 1 mode and a frequency of 11.6 μHz (once a day) or higher and less than 0.1 Hz (0.1 times per second), preferably 0.28 mHz (once per hour) or higher and 1 Hz (per second) A method for driving the information processing apparatus including the second mode for outputting at a frequency less than (one time) will be described.

FIG. 11 is a block diagram illustrating a modification example of the structure of the display portion of the information processing device having the display function of one embodiment of the present invention.

FIG. 12 is a circuit diagram illustrating an information processing device having a display function of one embodiment of the present invention.

In the present embodiment, in the information processing method described in the first or second embodiment using the information processing device described in the third embodiment, an information processing method for displaying a display image at a frequency of 1 Hz or less. Will be explained.

According to the information processing method of one aspect of the present invention, information that cannot be displayed on one screen processed by the arithmetic device is divided into a plurality of still images, and the divided information is sequentially displayed as a display image on a screen or a window. To do. As a result, the user of the information processing apparatus does not need to find the target information from the moving display by following the moving display, and the burden on the user's eyes is reduced. It is reduced. As a result, it is possible to provide a novel information processing method capable of gently displaying an image including information processed by the arithmetic device.

<1. Method of writing S signal to pixel portion>
An example of a method for writing the S signal 633_S to the pixel portion 631 illustrated in FIG. 10A or FIG. Specifically, a method for writing the S signal 633_S to each of the pixels 631p including the pixel circuit illustrated in FIG. 10B in the pixel portion 631 is described.

<Writing signals to the pixel section>
In the first frame period, the scan line G1 is selected by inputting a G signal 632_G having a pulse to the scan line G1. In each of the plurality of pixels 631p connected to the selected scanning line G1, the transistor 634t is turned on.

When the transistor 634t is in a conductive state (one line period), the potential of the S signal 633_S generated from the secondary image signal 615_V is applied from the signal line S1 to the signal line Sx. Then, electric charge corresponding to the potential of the S signal 633_S is accumulated in the capacitor 634c through the conductive transistor 634t, and the potential of the S signal 633_S is supplied to the first electrode of the liquid crystal element 635LC.

In a period in which the scanning line G1 in the first frame period is selected, the S signal 633_S having a positive polarity is sequentially input to all the signal lines S1 to Sx. A positive polarity S signal 633_S is supplied to the first electrode (G1S1) to the first electrode (G1Sx) in the pixel 631p connected to the scan line G1 and the signal lines S1 to Sx, respectively. Accordingly, the transmittance of the liquid crystal element 635LC is controlled by the potential of the S signal 633_S, and each pixel displays a gradation.

Similarly, the scanning line G2 to the scanning line Gy are sequentially selected, and the same operation as in the period when the scanning line G1 is selected is sequentially performed in the pixels 631p connected to the scanning lines G2 to Gy. Repeated. Through the above operation, the pixel portion 631 can display the first frame image.

Note that in one embodiment of the present invention, the scan lines G1 to Gy are not necessarily selected in order.

Note that dot sequential driving in which the S signal 633_S is sequentially input from the S driving circuit 633 to the signal lines S1 to Sx can be used, or line sequential driving in which the S signal 633_S is simultaneously input can be used. Alternatively, a driving method of inputting the S signal 633_S in order for each of the plurality of signal lines S may be used.

Further, not only the scanning line G selection method using the progressive method, but also the scanning line G may be selected using the interlace method.

Further, even if the polarity of the S signal 633_S input to all the signal lines is the same in any one frame period, the S signal input to the pixel for each signal line in any one frame period. The polarity of 633_S may be reversed.

<Writing a signal to a pixel portion divided into a plurality of regions>
A modification of the configuration of the display unit 630 is shown in FIG.

A display portion 630 illustrated in FIG. 11 includes a plurality of pixels 631p and a pixel 631p in a pixel portion 631 (specifically, a first region 631a, a second region 631b, and a third region 631c) divided into a plurality of regions. Are provided for each row, and a plurality of signal lines S for supplying the S signal 633_S to the selected pixel 631p are provided.

Input of the G signal 632_G to the scanning line G provided in each region is controlled by each G driving circuit 632. The input of the S signal 633_S to the signal line S is controlled by the S drive circuit 633. The plurality of pixels 631p are connected to at least one of the scanning lines G and at least one of the signal lines S, respectively.

With such a structure, the pixel portion 631 can be divided and driven.

For example, when inputting information from the touch panel as the input unit 500, only the G drive circuit 632 that acquires the coordinates specifying the area where the information is input and drives the area corresponding to the coordinates is set as the second mode. Other regions may be set as the first mode. With this operation, it is possible to stop the operation of the G drive circuit in a region where information is not input from the touch panel, that is, a region where the display image does not need to be rewritten.

<2. First Mode and Second Mode G Drive Circuit>
The S signal 633_S is input to the pixel circuit 634 to which the G signal 632_G output from the G drive circuit 632 is input. In a period in which the G signal 632_G is not input, the pixel circuit 634 holds the potential of the S signal 633_S. In other words, the pixel circuit 634 holds a state where the potential of the S signal 633_S is written.

The pixel circuit 634 in which the display data is written maintains a display state corresponding to the S signal 633_S. Note that maintaining the display state refers to maintaining the display state so that the change in the display state does not become larger than a certain range. The certain range is a range that is set as appropriate. For example, when the user views the display image, it is preferable to set the range to a display state that can be recognized as the same display image.

The G drive circuit 632 has a first mode and a second mode.

<2-1. First mode>
In the first mode of the G driving circuit 632, the G signal 632_G is output to the pixel at a frequency of 30 times or more per second, preferably 60 times or more and less than 960 times per second.

The G driving circuit 632 in the first mode rewrites the signal at such a speed that the observer cannot identify the change in the image that changes every time the signal is rewritten. As a result, a moving image can be displayed smoothly.

<2-2. Second mode>
In the second mode of the G driving circuit 632, the G signal 632_G is sent to the pixel at a frequency of once or more per day and less than 0.1 times per second, preferably at least once per hour and less than once per second. Output.

During the period when the G signal 632_G is not input, the pixel circuit 634 holds the S signal 633_S and continuously maintains the display state corresponding to the potential.

Accordingly, in the second mode, display without flicker (also referred to as flicker) associated with rewriting of pixel display can be performed.

As a result, the eyestrain of the user of the information processing apparatus having the display function can be reduced.

Note that the power consumed by the G drive circuit 632 is reduced during a period when the G drive circuit 632 does not operate.

Note that a pixel circuit driven using the G driver circuit 632 having the second mode preferably holds the S signal 633_S for a long period. For example, the leakage current of the transistor 634t is preferably as small as possible in the off state.

Embodiment 7 can be referred to for an example of a structure of the transistor 634t having a small leakage current in the off state.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 5)
In this embodiment, a program of one embodiment of the present invention will be described with reference to FIG.

In the present embodiment, a program for causing an information processing apparatus including a display unit, an arithmetic unit, and an input unit to execute the following processing will be described.

Using the information processing apparatus, a first step of displaying a first still image including information processed by the arithmetic unit as a display image on a window of the display unit, and a display sending instruction including information on direction and speed When the distance obtained from the product of the speed and the standby time is equal to or longer than the length of the window after the second step input using the input means and a predetermined standby time, the first still image is continuous. And a third step of displaying the second still image to be displayed on the window as a display image.

According to the program exemplified in the present embodiment, information that cannot be displayed on one screen processed by the arithmetic device is divided into a plurality of pieces, and the divided information is displayed as a still image on a screen or a window. As a result, the user of the information processing apparatus does not need to find the target information from the moving display by following the moving display, and the burden on the user's eyes is reduced. It is reduced. As a result, it is possible to provide a new program that can display an image including information processed by the arithmetic device gently to the eyes.

The program of one embodiment of the present invention can be distributed by a storage medium in which the program is written in advance or downloaded via a network.

The arithmetic device 11 of the information processing device 10 reads the program of one embodiment of the present invention from the external storage device of the input / output device 20 into the storage device 12. Next, arithmetic processing is executed according to the procedure of the program described above.

The information processing apparatus 10 outputs the execution result of the program to the display unit 22 via the input / output interface 15.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 6)
Examples of a semiconductor and a semiconductor film that can be preferably used for a region where a channel of a transistor is formed are described below.

An oxide semiconductor has a large energy gap of 3.0 eV or more. In a transistor to which an oxide semiconductor film obtained by processing an oxide semiconductor under appropriate conditions and sufficiently reducing its carrier density is applied, The leakage current (off-state current) between the source and the drain in the off state can be made extremely low as compared with a conventional transistor using silicon.

A transistor with a reduced off-state current including a semiconductor film described in this embodiment can be applied to the display portion of the information processing device described in Embodiment 3. In particular, when applied to a switching element of a pixel circuit included in a pixel portion, the display state of the display element can be maintained for a longer time than a conventional transistor (for example, a transistor in which amorphous silicon is applied to a semiconductor film). Thereby, as will be described in the fourth embodiment, the frequency of the G signal for selecting the pixel of the display unit of the information processing apparatus can be drastically reduced.

In the case where an oxide semiconductor film is used for a transistor, the thickness of the oxide semiconductor film is preferably 2 nm to 40 nm.

An applicable oxide semiconductor preferably contains at least indium (In) or zinc (Zn). In particular, In and Zn are preferably included. Further, as a stabilizer for reducing variation in electrical characteristics of a transistor using the oxide semiconductor, in addition to them, gallium (Ga), tin (Sn), hafnium (Hf), zirconium (Zr), titanium (Ti) , Scandium (Sc), yttrium (Y), or a lanthanoid (for example, cerium (Ce), neodymium (Nd), gadolinium (Gd)), or a plurality of types are preferably included.

For example, as an oxide semiconductor, indium oxide, tin oxide, zinc oxide, In—Zn oxide, Sn—Zn oxide, Al—Zn oxide, Zn—Mg oxide, Sn—Mg oxide In-Mg-based oxide, In-Ga-based oxide, In-Ga-Zn-based oxide (also referred to as IGZO), In-Al-Zn-based oxide, In-Sn-Zn-based oxide, Sn- Ga-Zn oxide, Al-Ga-Zn oxide, Sn-Al-Zn oxide, In-Hf-Zn oxide, In-Zr-Zn oxide, In-Ti-Zn oxide In-Sc-Zn-based oxide, In-Y-Zn-based oxide, In-La-Zn-based oxide, In-Ce-Zn-based oxide, In-Pr-Zn-based oxide, In-Nd -Zn-based oxide, In-Sm-Zn-based oxide, In-Eu-Zn-based oxide In-Gd-Zn-based oxide, In-Tb-Zn-based oxide, In-Dy-Zn-based oxide, In-Ho-Zn-based oxide, In-Er-Zn-based oxide, In-Tm-Zn Oxide, In—Yb—Zn oxide, In—Lu—Zn oxide, In—Sn—Ga—Zn oxide, In—Hf—Ga—Zn oxide, In—Al—Ga— A Zn-based oxide, an In-Sn-Al-Zn-based oxide, an In-Sn-Hf-Zn-based oxide, or an In-Hf-Al-Zn-based oxide can be used.

Here, the In—Ga—Zn-based oxide means an oxide containing In, Ga, and Zn as main components, and there is no limitation on the ratio of In, Ga, and Zn. Moreover, metal elements other than In, Ga, and Zn may be contained.

Alternatively, a material represented by InMO ₃ (ZnO) _m (m> 0 is satisfied, and m is not an integer) may be used as the oxide semiconductor. Note that M represents one metal element or a plurality of metal elements selected from Ga, Fe, Mn, and Co, or the above-described element as a stabilizer. Alternatively, a material represented by In ₂ SnO ₅ (ZnO) _n (n> 0 is satisfied, and n is an integer) may be used as the oxide semiconductor.

For example, In: Ga: Zn = 1: 1: 1, In: Ga: Zn = 1: 3: 2, In: Ga: Zn = 3: 1: 2, or In: Ga: Zn = 2: 1: 3. It is preferable to use an In—Ga—Zn-based oxide having an atomic ratio of or an oxide in the vicinity of the composition.

When the oxide semiconductor film contains a large amount of hydrogen, the oxide semiconductor film is bonded to the oxide semiconductor, so that part of the hydrogen becomes a donor and an electron which is a carrier is generated. As a result, the threshold voltage of the transistor shifts in the negative direction. Therefore, after the oxide semiconductor film is formed, dehydration treatment (dehydrogenation treatment) is performed to remove hydrogen or moisture from the oxide semiconductor film so that impurities are contained as little as possible. preferable.

Note that oxygen may be reduced from the oxide semiconductor film at the same time due to dehydration treatment (dehydrogenation treatment) of the oxide semiconductor film. Therefore, it is preferable to add oxygen that has been simultaneously reduced by dehydration treatment (dehydrogenation treatment) to the oxide semiconductor film or supply oxygen to fill oxygen vacancies in the oxide semiconductor film. . In this specification and the like, the case where oxygen is supplied to the oxide semiconductor film may be referred to as oxygenation treatment or peroxygenation treatment.

As described above, the oxide semiconductor film is made i-type (intrinsic) or i-type by removing hydrogen or moisture by dehydration treatment (dehydrogenation treatment) and filling oxygen vacancies by oxygenation treatment. An oxide semiconductor film that is substantially i-type (intrinsic) can be obtained. Note that substantially intrinsic means that the number of carriers derived from a donor in the oxide semiconductor film is extremely small (near zero), and the carrier density is 1 × 10 ¹⁷ / cm ³ or less, 1 × 10 ¹⁶ / cm ³ or less, It means 1 × 10 ¹⁵ / cm ³ or less, 1 × 10 ¹⁴ / cm ³ or less, and 1 × 10 ¹³ / cm ³ or less.

As described above, a transistor including an i-type or substantially i-type oxide semiconductor film can realize extremely excellent off-state current characteristics. For example, the drain current when the transistor including an oxide semiconductor film is off is 1 × 10 ⁻¹⁸ A or less, preferably 1 × 10 ⁻²¹ A or less, more preferably 1 at room temperature (about 25 ° C.). × 10 ⁻²⁴ A or lower, or 1 × 10 ⁻¹⁵ A or lower, preferably 1 × 10 ⁻¹⁸ A or lower, more preferably 1 × 10 ⁻²¹ A or lower at 85 ° C. Note that an off state of a transistor means a state where a gate voltage is sufficiently lower than a threshold voltage in the case of an n-channel transistor. Specifically, when the gate voltage is 1 V or higher, 2 V or higher, or 3 V or lower than the threshold voltage, the transistor is turned off.

The oxide semiconductor film may be single crystal or non-single crystal. In the latter case, it may be amorphous or polycrystalline. Moreover, the structure which contains the part which has crystallinity in an amorphous may be sufficient, and a non-amorphous may be sufficient.

Preferably, the oxide semiconductor film is a CAAC-OS (C Axis Crystallized Oxide Semiconductor) film.

The CAAC-OS film is not completely single crystal nor completely amorphous. The CAAC-OS film is an oxide semiconductor film with a crystal-amorphous mixed phase structure where crystal parts and amorphous parts are included in an amorphous phase. Note that the crystal part is often large enough to fit in a cube whose one side is less than 100 nm. Further, in the observation image obtained by a transmission electron microscope (TEM), the boundary between the amorphous part and the crystal part included in the CAAC-OS film is not clear. Further, a grain boundary (also referred to as a grain boundary) cannot be confirmed in the CAAC-OS film by TEM. Therefore, in the CAAC-OS film, reduction in electron mobility due to grain boundaries is suppressed.

In the crystal part included in the CAAC-OS film, the c-axis is aligned in a direction parallel to the normal vector of the formation surface of the CAAC-OS film or the normal vector of the surface, and triangular when viewed from the direction perpendicular to the ab plane. It has a shape or hexagonal atomic arrangement, and metal atoms are arranged in layers or metal atoms and oxygen atoms are arranged in layers as viewed from the direction perpendicular to the c-axis. Note that the directions of the a-axis and the b-axis may be different between different crystal parts. In this specification, a simple term “perpendicular” includes a range from 85 ° to 95 °. In addition, a simple term “parallel” includes a range from −5 ° to 5 °.

Note that the distribution of crystal parts in the CAAC-OS film is not necessarily uniform. For example, in the formation process of the CAAC-OS film, when crystal growth is performed from the surface side of the oxide semiconductor film, the ratio of crystal parts in the vicinity of the surface of the oxide semiconductor film is higher in the vicinity of the surface. In addition, when an impurity is added to the CAAC-OS film, the crystal part in a region to which the impurity is added becomes amorphous in some cases.

Since the c-axis of the crystal part included in the CAAC-OS film is aligned in a direction parallel to the normal vector of the formation surface of the CAAC-OS film or the normal vector of the surface, the shape of the CAAC-OS film (formation surface) Depending on the cross-sectional shape of the surface or the cross-sectional shape of the surface). Note that the c-axis direction of the crystal part is parallel to the normal vector of the surface where the CAAC-OS film is formed or the normal vector of the surface. The crystal part is formed by film formation or by performing crystallization treatment such as heat treatment after film formation.

In a transistor using a CAAC-OS film, change in electrical characteristics due to irradiation with visible light or ultraviolet light is small. Therefore, the transistor has high reliability.

The CAAC-OS film can be formed by a sputtering method using a polycrystalline oxide semiconductor sputtering target, for example. When ions collide with the sputtering target, a crystal region included in the sputtering target is cleaved from the ab plane, and may be separated as flat or pellet-like sputtering particles having a plane parallel to the ab plane. is there. In this case, the CAAC-OS film can be formed when the flat or pellet-like sputtered particles reach the deposition surface while maintaining a crystalline state.

The flat sputtered particles have, for example, a circle-equivalent diameter of a plane parallel to the ab plane of 3 nm to 10 nm and a thickness (length in a direction perpendicular to the ab plane) of 0.7 nm to less than 1 nm. . The flat sputtered particles may have a regular triangle or a regular hexagonal plane parallel to the ab plane. Here, the equivalent circle diameter refers to the diameter of a perfect circle that is equal to the surface area.

In order to form the CAAC-OS film, the following conditions are preferably applied.

By increasing the substrate temperature at the time of film formation, migration of the flat sputtered particles reaching the substrate occurs, and the flat surface of the sputtered particles adheres to the substrate. At this time, since the sputtered particles are positively charged and the sputtered particles adhere to the substrate while being repelled, the sputtered particles are not biased and do not overlap unevenly, and a CAAC-OS film having a uniform thickness is formed. Can be membrane. Specifically, it is preferable to form the film at a substrate temperature of 100 ° C to 740 ° C, preferably 200 ° C to 500 ° C.

In addition, by reducing impurity contamination during film formation, the crystal state can be prevented from being broken by impurities. For example, the concentration of impurities (such as hydrogen, water, carbon dioxide, and nitrogen) existing in the deposition chamber may be reduced. Further, the impurity concentration in the deposition gas may be reduced. Specifically, a deposition gas having a dew point of −80 ° C. or lower, preferably −100 ° C. or lower is used.

In addition, it is preferable to reduce plasma damage during film formation by increasing the oxygen ratio in the film formation gas and optimizing electric power. The oxygen ratio in the deposition gas is 30% by volume or more, preferably 100% by volume.

Heat treatment may be performed after the CAAC-OS film is formed. The temperature of the heat treatment is 100 ° C. or higher and 740 ° C. or lower, preferably 200 ° C. or higher and 500 ° C. or lower. The heat treatment time is 1 minute to 24 hours, preferably 6 minutes to 4 hours. Further, the heat treatment may be performed in an inert atmosphere or an oxidizing atmosphere. Preferably, after heat treatment in an inert atmosphere, heat treatment is performed in an oxidizing atmosphere. By the heat treatment in an inert atmosphere, the impurity concentration of the CAAC-OS film can be reduced in a short time. On the other hand, oxygen vacancies may be generated in the CAAC-OS film by heat treatment in an inert atmosphere. In that case, the oxygen vacancies can be reduced by heat treatment in an oxidizing atmosphere. Further, by performing heat treatment, the crystallinity of the CAAC-OS film can be further increased. Note that the heat treatment may be performed under a reduced pressure of 1000 Pa or less, 100 Pa or less, 10 Pa or less, or 1 Pa or less. Under reduced pressure, the impurity concentration of the CAAC-OS film can be reduced in a shorter time.

As an example of the sputtering target, an In—Ga—Zn—O compound target is described below.

In-Ga-Zn- which is polycrystalline by mixing InO _X powder, GaO _Y powder and ZnO _Z powder in a predetermined number of moles, and after heat treatment at a temperature of 1000 ° C. to 1500 ° C. An O compound target is used. X, Y and Z are arbitrary positive numbers. Here, the predetermined mole number ratio is, for example, 1: 1: 1, 1: 1: 2, 1: 3: 2, 1: 9: 6, 2 for InO _X powder, GaO _Y powder, and ZnO _Z powder. 1: 3, 2: 2: 1, 3: 1: 1, 3: 1: 2, 3: 1: 4, 4: 2: 3, 8: 4: 3, or a value in the vicinity thereof Can do. Note that the type of powder and the mol number ratio to be mixed may be changed as appropriate depending on the sputtering target to be manufactured.

Alternatively, the CAAC-OS film may be formed by the following method.

First, the first oxide semiconductor film is formed with a thickness greater than or equal to 1 nm and less than 10 nm. The first oxide semiconductor film is formed by a sputtering method. Specifically, the film formation is performed at a substrate temperature of 100 ° C. or higher and 500 ° C. or lower, preferably 150 ° C. or higher and 450 ° C. or lower, and an oxygen ratio in the film forming gas is 30% by volume or higher, preferably 100% by volume.

Next, heat treatment is performed so that the first oxide semiconductor film becomes a first CAAC-OS film with high crystallinity. The temperature of the heat treatment is 350 ° C to 740 ° C, preferably 450 ° C to 650 ° C. The heat treatment time is 1 minute to 24 hours, preferably 6 minutes to 4 hours. Further, the heat treatment may be performed in an inert atmosphere or an oxidizing atmosphere. Preferably, after heat treatment in an inert atmosphere, heat treatment is performed in an oxidizing atmosphere. By the heat treatment in the inert atmosphere, the impurity concentration of the first oxide semiconductor film can be reduced in a short time. On the other hand, oxygen vacancies may be generated in the first oxide semiconductor film by heat treatment in an inert atmosphere. In that case, the oxygen vacancies can be reduced by heat treatment in an oxidizing atmosphere. Note that the heat treatment may be performed under a reduced pressure of 1000 Pa or less, 100 Pa or less, 10 Pa or less, or 1 Pa or less. Under reduced pressure, the impurity concentration of the first oxide semiconductor film can be further reduced in a short time.

When the thickness of the first oxide semiconductor film is greater than or equal to 1 nm and less than 10 nm, the first oxide semiconductor film can be easily crystallized by heat treatment as compared with the case where the thickness is greater than or equal to 10 nm.

Next, a second oxide semiconductor film having the same composition as the first oxide semiconductor film is formed to a thickness of greater than or equal to 10 nm and less than or equal to 50 nm. The second oxide semiconductor film is formed by a sputtering method. Specifically, the film formation is performed at a substrate temperature of 100 ° C. or higher and 500 ° C. or lower, preferably 150 ° C. or higher and 450 ° C. or lower, and an oxygen ratio in the film forming gas is 30% by volume or higher, preferably 100% by volume.

Next, heat treatment is performed, and the second oxide semiconductor film is solid-phase grown from the first CAAC-OS film, whereby the second CAAC-OS film with high crystallinity is obtained. The temperature of the heat treatment is 350 ° C to 740 ° C, preferably 450 ° C to 650 ° C. The heat treatment time is 1 minute to 24 hours, preferably 6 minutes to 4 hours. Further, the heat treatment may be performed in an inert atmosphere or an oxidizing atmosphere. Preferably, after heat treatment in an inert atmosphere, heat treatment is performed in an oxidizing atmosphere. By the heat treatment in the inert atmosphere, the impurity concentration of the second oxide semiconductor film can be reduced in a short time. On the other hand, oxygen vacancies may be generated in the second oxide semiconductor film by heat treatment in an inert atmosphere. In that case, the oxygen vacancies can be reduced by heat treatment in an oxidizing atmosphere. Note that the heat treatment may be performed under a reduced pressure of 1000 Pa or less, 100 Pa or less, 10 Pa or less, or 1 Pa or less. Under reduced pressure, the impurity concentration of the second oxide semiconductor film can be further reduced in a short time.

As described above, a CAAC-OS film with a total thickness of 10 nm or more can be formed.

The oxide semiconductor film may have a structure in which a plurality of oxide semiconductor films are stacked.

For example, the oxide semiconductor film is formed of an element forming the first layer between the oxide semiconductor film (referred to as the first layer for convenience) and the gate insulating film, and has an electron affinity of 0. A second layer smaller than 2 eV may be provided. At this time, when an electric field is applied from the gate electrode, a channel is formed in the first layer, and no channel is formed in the second layer. Since the first layer has the same constituent elements as the second layer, interface scattering hardly occurs at the interface between the first layer and the second layer. Therefore, by providing the second layer between the first layer and the gate insulating film, the field effect mobility of the transistor can be increased.

Further, in the case where a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, or a silicon nitride film is used for the gate insulating film, silicon contained in the gate insulating film may be mixed into the oxide semiconductor film. When silicon is contained in the oxide semiconductor film, crystallinity of the oxide semiconductor film, carrier mobility, and the like are reduced. Therefore, in order to reduce the silicon concentration of the first layer in which the channel is formed, it is preferable to provide the second layer between the first layer and the gate insulating film. For the same reason, it is preferable to provide a third layer made of an element constituting the first layer and having an electron affinity of 0.2 eV or more smaller than that of the first layer, and sandwich the first layer between the second layer and the third layer. .

With such a structure, diffusion of impurities such as silicon into a region where a channel is formed can be reduced and prevented, so that a highly reliable transistor can be obtained.

Note that in order to use the oxide semiconductor film as a CAAC-OS film, the concentration of silicon contained in the oxide semiconductor film is set to 2.5 × 10 ²¹ / cm ³ or less. Preferably, the concentration of silicon contained in the oxide semiconductor film is less than 1.4 × 10 ²¹ / cm ³ , more preferably less than 4 × 10 ¹⁹ / cm ³ , and even more preferably 2.0 × 10 ¹⁸ / cm ^3. Less than. When the concentration of silicon contained in the oxide semiconductor film is 1.4 × 10 ²¹ / cm ³ or more, there is a fear that the field-effect mobility of the transistor may be reduced, and 4.0 × 10 ¹⁹ / cm ³ or more. This is because the oxide semiconductor film may become amorphous at the interface between the oxide semiconductor film and the film in contact with the oxide semiconductor film. In addition, when the silicon concentration in the oxide semiconductor film is less than 2.0 × 10 ¹⁸ / cm ³ , further improvement in the reliability of the transistor and reduction in DOS (density of state) in the oxide semiconductor film are expected. it can. Note that the silicon concentration in the oxide semiconductor film can be measured by secondary ion mass spectrometry (SIMS).

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 7)
In this embodiment, a structural example of a transistor to which the oxide semiconductor film described in Embodiment 6 is applied will be described with reference to drawings.

<Example of transistor structure>
FIG. 13A is a schematic top view of a transistor 100 described below. FIG. 13B is a schematic cross-sectional view of the transistor 100 taken along a cutting line AB in FIG. The transistor 100 exemplified in this structural example is a bottom-gate transistor.

  The transistor 100 includes a gate electrode 102 provided over the substrate 101, an insulating layer 103 provided over the substrate 101 and the gate electrode 102, and an oxide semiconductor layer 104 provided over the insulating layer 103 so as to overlap with the gate electrode 102. A pair of electrodes 105 a and 105 b in contact with the top surface of the oxide semiconductor layer 104. An insulating layer 106 that covers the insulating layer 103, the oxide semiconductor layer 104, the pair of electrodes 105 a and 105 b, and an insulating layer 107 is provided over the insulating layer 106.

  The oxide semiconductor film of one embodiment of the present invention can be applied to the oxide semiconductor layer 104 of the transistor 100.

<Substrate 101>
There is no particular limitation on the material of the substrate 101, but at least a material having heat resistance enough to withstand heat treatment performed later is used. For example, a glass substrate, a ceramic substrate, a quartz substrate, a sapphire substrate, a YSZ (yttria stabilized zirconia) substrate, or the like may be used as the substrate 101. Alternatively, a single crystal semiconductor substrate such as silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, an SOI substrate, or the like can be used. A substrate in which a semiconductor element is provided over these substrates may be used as the substrate 101.

  Alternatively, a flexible substrate such as plastic may be used as the substrate 101, and the transistor 100 may be formed directly over the flexible substrate. Alternatively, a separation layer may be provided between the substrate 101 and the transistor 100. The peeling layer can be used for forming a part or all of the transistor over the upper layer, separating the transistor from the substrate 101, and transferring it to another substrate. As a result, the transistor 100 can be transferred to a substrate having poor heat resistance or a flexible substrate.

<< Gate electrode 102 >>
The gate electrode 102 may be formed using a metal selected from aluminum, chromium, copper, tantalum, titanium, molybdenum, tungsten, an alloy containing any of the above metals, or an alloy combining any of the above metals. it can. Further, a metal selected from one or more of manganese and zirconium may be used. The gate electrode 102 may have a single-layer structure or a stacked structure including two or more layers. For example, a single-layer structure of an aluminum film containing silicon, a two-layer structure in which a titanium film is stacked on an aluminum film, a two-layer structure in which a titanium film is stacked on a titanium nitride film, and a two-layer structure in which a tungsten film is stacked on a titanium nitride film Layer structure, two-layer structure in which a tungsten film is stacked on a tantalum nitride film or tungsten nitride film, a three-layer structure in which a titanium film, an aluminum film is stacked on the titanium film, and a titanium film is further formed thereon is there. Alternatively, an alloy film in which one or a plurality of metals selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium are combined with aluminum, or a nitride film thereof may be used.

  The gate electrode 102 includes indium tin oxide, indium oxide including tungsten oxide, indium zinc oxide including tungsten oxide, indium oxide including titanium oxide, indium tin oxide including titanium oxide, and indium zinc oxide. Alternatively, a light-transmitting conductive material such as indium tin oxide to which silicon oxide is added can be used. Alternatively, a stacked structure of the above light-transmitting conductive material and the above metal can be used.

  Further, an In—Ga—Zn-based oxynitride semiconductor film, an In—Sn-based oxynitride semiconductor film, an In—Ga-based oxynitride semiconductor film, and an In—Zn-based film are provided between the gate electrode 102 and the insulating layer 103. An oxynitride semiconductor film, a Sn-based oxynitride semiconductor film, an In-based oxynitride semiconductor film, a metal nitride film (InN, ZnN, or the like), or the like may be provided. These films have a work function of 5 eV, preferably 5.5 eV or more, and have a value larger than the electron affinity of the oxide semiconductor, so that the threshold voltage of a transistor including the oxide semiconductor is shifted to plus. Therefore, a switching element having a so-called normally-off characteristic can be realized. For example, when an In—Ga—Zn-based oxynitride semiconductor film is used, an In—Ga—Zn-based oxynitride semiconductor film with at least a nitrogen concentration higher than that of the oxide semiconductor layer 104, specifically, 7 atomic% or more is used. .

<< Insulating layer 103 >>
The insulating layer 103 functions as a gate insulating film. The insulating layer 103 in contact with the lower surface of the oxide semiconductor layer 104 is preferably an amorphous film.

  For the insulating layer 103, for example, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, hafnium oxide, gallium oxide, a Ga—Zn-based metal oxide, silicon nitride, or the like may be used. Provide.

As the insulating layer 103, hafnium silicate (HfSiO _x ), hafnium silicate added with nitrogen (HfSi _x O _y N _z ), hafnium aluminate added with nitrogen (HfAl _x O _y N _z ), hafnium oxide, By using a high-k material such as yttrium oxide, gate leakage of the transistor can be reduced.

<< A pair of electrodes 105a and 105b >>
The pair of electrodes 105a and 105b functions as a source electrode or a drain electrode of the transistor.

  The pair of electrodes 105a and 105b has a single layer of a single metal made of aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or an alloy containing this as a main component, as a conductive material. It can be used as a structure or a laminated structure. For example, a single-layer structure of an aluminum film containing silicon, a two-layer structure in which a titanium film is stacked on an aluminum film, a two-layer structure in which a titanium film is stacked on a tungsten film, and a copper film on a copper-magnesium-aluminum alloy film A two-layer structure to be laminated, a three-layer structure in which a titanium film or a titanium nitride film and an aluminum film or a copper film are laminated on the titanium film or the titanium nitride film, and a titanium film or a titanium nitride film is further formed thereon. There is a three-layer structure in which a molybdenum film or a molybdenum nitride film and an aluminum film or a copper film are stacked over the molybdenum film or the molybdenum nitride film and a molybdenum film or a molybdenum nitride film is further formed thereon. Note that a transparent conductive material containing indium oxide, tin oxide, or zinc oxide may be used.

<< Insulating layers 106, 107 >>
The insulating layer 106 is preferably formed using an oxide insulating film containing more oxygen than that in the stoichiometric composition. Part of oxygen is released by heating from the oxide insulating film containing oxygen in excess of the stoichiometric composition. An oxide insulating film containing more oxygen than that in the stoichiometric composition is desorbed in terms of oxygen atoms by thermal desorption gas spectroscopy (TDS) analysis. The oxide insulating film has an amount of 1.0 × 10 ¹⁸ atoms / cm ³ or more, preferably 3.0 × 10 ²⁰ atoms / cm ³ or more.

  As the insulating layer 106, silicon oxide, silicon oxynitride, or the like can be used.

  Note that the insulating layer 106 also functions as a damage reducing film for the oxide semiconductor layer 104 when the insulating layer 107 to be formed later is formed.

  Further, an oxide film that transmits oxygen may be provided between the insulating layer 106 and the oxide semiconductor layer 104.

  As the oxide film that transmits oxygen, silicon oxide, silicon oxynitride, or the like can be used. Note that in this specification, a silicon oxynitride film refers to a film having a higher oxygen content than nitrogen as a composition, and a silicon nitride oxide film includes a nitrogen content as compared to oxygen as a composition. Refers to membranes with a lot of

  As the insulating layer 107, an insulating film having a blocking effect of oxygen, hydrogen, water, or the like can be used. By providing the insulating layer 107 over the insulating layer 106, diffusion of oxygen from the oxide semiconductor layer 104 to the outside and entry of hydrogen, water, or the like from the outside to the oxide semiconductor layer 104 can be prevented. As an insulating film having a blocking effect of oxygen, hydrogen, water, etc., silicon nitride, silicon nitride oxide, aluminum oxide, aluminum oxynitride, gallium oxide, gallium oxynitride, yttrium oxide, yttrium oxynitride, hafnium oxide, hafnium oxynitride Etc.

<Example of Method for Manufacturing Transistor>
Next, an example of a method for manufacturing the transistor 100 illustrated in FIGS.

  First, as illustrated in FIG. 14A, the gate electrode 102 is formed over the substrate 101, and the insulating layer 103 is formed over the gate electrode 102.

  Here, a glass substrate is used as the substrate 101.

<< Formation of gate electrode >>
A method for forming the gate electrode 102 is described below. First, a conductive film is formed by a sputtering method, a CVD method, an evaporation method, or the like, and a resist mask is formed on the conductive film by a photolithography process using a first photomask. Next, part of the conductive film is etched using the resist mask, so that the gate electrode 102 is formed. Thereafter, the resist mask is removed.

  Note that the gate electrode 102 may be formed by an electrolytic plating method, a printing method, an inkjet method, or the like instead of the above formation method.

<Formation of gate insulating layer>
The insulating layer 103 is formed by a sputtering method, a CVD method, an evaporation method, or the like.

  In the case where a silicon oxide film, a silicon oxynitride film, or a silicon nitride oxide film is formed as the insulating layer 103, a deposition gas containing silicon and an oxidation gas are preferably used as a source gas. Typical examples of the deposition gas containing silicon include silane, disilane, trisilane, and fluorinated silane. Examples of the oxidizing gas include oxygen, ozone, dinitrogen monoxide, and nitrogen dioxide.

  In the case where a silicon nitride film is formed as the insulating layer 103, a two-step formation method is preferably used. First, a first silicon nitride film with few defects is formed by a plasma CVD method using a mixed gas of silane, nitrogen, and ammonia as a source gas. Next, the source gas is switched to a mixed gas of silane and nitrogen, and a second silicon nitride film having a low hydrogen concentration and capable of blocking hydrogen is formed. With such a formation method, a silicon nitride film with few defects and hydrogen blocking properties can be formed as the insulating layer 103.

  In the case where a gallium oxide film is formed as the insulating layer 103, the insulating layer 103 can be formed using a MOCVD (Metal Organic Chemical Vapor Deposition) method.

<< Formation of oxide semiconductor layer >>
Next, as illustrated in FIG. 14B, the oxide semiconductor layer 104 is formed over the insulating layer 103.

  A method for forming the oxide semiconductor layer 104 is described below. First, an oxide semiconductor film is formed by a method described in Embodiment 6. Subsequently, a resist mask is formed over the oxide semiconductor film by a photolithography process using a second photomask. Next, part of the oxide semiconductor film is etched using the resist mask, so that the oxide semiconductor layer 104 is formed. Thereafter, the resist mask is removed.

  Thereafter, heat treatment may be performed. When heat treatment is performed, it is preferably performed in an atmosphere containing oxygen.

<< Formation of a pair of electrodes >>
Next, as shown in FIG. 14C, a pair of electrodes 105a and 105b is formed.

  A method for forming the pair of electrodes 105a and 105b is described below. First, a conductive film is formed by a sputtering method, a CVD method, a vapor deposition method, or the like. Next, a resist mask is formed over the conductive film by a photolithography process using a third photomask. Next, part of the conductive film is etched using the resist mask to form the pair of electrodes 105a and 105b. Thereafter, the resist mask is removed.

  Note that as illustrated in FIG. 14B, when the conductive film is etched, part of the upper portion of the oxide semiconductor layer 104 is etched to be thin. Therefore, when the oxide semiconductor layer 104 is formed, the thickness of the oxide semiconductor film is preferably set to be thick in advance.

<Formation of insulating layer>
Next, as illustrated in FIG. 14D, the insulating layer 106 is formed over the oxide semiconductor layer 104 and the pair of electrodes 105a and 105b, and then the insulating layer 107 is formed over the insulating layer 106.

  In the case where a silicon oxide film or a silicon oxynitride film is formed as the insulating layer 106, a deposition gas containing silicon and an oxidation gas are preferably used as a source gas. Typical examples of the deposition gas containing silicon include silane, disilane, trisilane, and fluorinated silane. Examples of the oxidizing gas include oxygen, ozone, dinitrogen monoxide, and nitrogen dioxide.

For example, a substrate placed in a vacuum evacuated processing chamber of a plasma CVD apparatus is held at 180 ° C. or higher and 260 ° C. or lower, more preferably 200 ° C. or higher and 240 ° C. or lower, and a source gas is introduced into the processing chamber. pressure 100Pa or more 250Pa or less in, more preferably not more than 200Pa than 100Pa, the electrode provided in the processing chamber 0.17 W / cm ² or more 0.5 W / cm ² or less, more preferably 0.25 W / cm ² or more 0 A silicon oxide film or a silicon oxynitride film is formed under conditions for supplying high-frequency power of .35 W / cm ² or less.

  As film formation conditions, by supplying high-frequency power with the above power density in the reaction chamber at the above pressure, the decomposition efficiency of the source gas in plasma increases, oxygen radicals increase, and the oxidation of the source gas proceeds. The oxygen content in the insulating film is larger than the stoichiometric ratio. However, when the substrate temperature is the above temperature, since the bonding force between silicon and oxygen is weak, part of oxygen is desorbed by heating. As a result, an oxide insulating film containing more oxygen than that in the stoichiometric composition and from which part of oxygen is released by heating can be formed.

  In the case where an oxide insulating film is provided between the oxide semiconductor layer 104 and the insulating layer 106, the oxide insulating film serves as a protective film for the oxide semiconductor layer 104 in the step of forming the insulating layer 106. As a result, the insulating layer 106 can be formed using high-frequency power with high power density while reducing damage to the oxide semiconductor layer 104.

  For example, a substrate placed in a evacuated processing chamber of a plasma CVD apparatus is held at 180 ° C. or higher and 400 ° C. or lower, more preferably 200 ° C. or higher and 370 ° C. or lower, and a raw material gas is introduced into the processing chamber. The silicon oxide film or the silicon oxynitride film may be formed as the oxide insulating film depending on conditions in which the pressure is 20 Pa to 250 Pa, more preferably 100 Pa to 250 Pa, and high-frequency power is supplied to the electrode provided in the treatment chamber. it can. In addition, when the pressure in the treatment chamber is greater than or equal to 100 Pa and less than or equal to 250 Pa, damage to the oxide semiconductor layer 104 can be reduced when the oxide insulating layer is formed.

  As a source gas for the oxide insulating film, a deposition gas containing silicon and an oxidation gas are preferably used. Typical examples of the deposition gas containing silicon include silane, disilane, trisilane, and fluorinated silane. Examples of the oxidizing gas include oxygen, ozone, dinitrogen monoxide, and nitrogen dioxide.

  The insulating layer 107 can be formed by a sputtering method, a CVD method, or the like.

  In the case where a silicon nitride film or a silicon nitride oxide film is formed as the insulating layer 107, a deposition gas containing silicon, an oxidizing gas, and a gas containing nitrogen are preferably used as a source gas. Typical examples of the deposition gas containing silicon include silane, disilane, trisilane, and fluorinated silane. Examples of the oxidizing gas include oxygen, ozone, dinitrogen monoxide, and nitrogen dioxide. Examples of the gas containing nitrogen include nitrogen and ammonia.

  Through the above steps, the transistor 100 can be formed.

<Modification of Transistor 100>
Hereinafter, a structural example of a transistor that is partly different from the transistor 100 will be described.

<< Modification 1 >>
FIG. 15A is a schematic cross-sectional view of a transistor 110 exemplified below. The transistor 110 is different from the transistor 100 in that the structure of the oxide semiconductor layer is different.

  The oxide semiconductor layer 114 included in the transistor 110 is formed by stacking an oxide semiconductor layer 114a and an oxide semiconductor layer 114b.

  Note that since the boundary between the oxide semiconductor layer 114a and the oxide semiconductor layer 114b may not be clear, these boundaries are indicated by broken lines in the drawing of FIG.

  The oxide semiconductor film of one embodiment of the present invention can be applied to one or both of the oxide semiconductor layer 114a and the oxide semiconductor layer 114b.

  For example, the oxide semiconductor layer 114a typically includes an In-Ga oxide, an In-Zn oxide, and an In-M-Zn oxide (M is Al, Ti, Ga, Y, Zr, La, Ce, Nd Or Hf). In the case where the oxide semiconductor layer 114a is an In-M-Zn oxide, the atomic ratio of In to M is preferably less than 50 atomic% for In, more than 50 atomic% for M, and more preferably 25 atomic for In. % And M is 75 atomic% or more. For example, the oxide semiconductor layer 114a is formed using a material having an energy gap of 2 eV or more, preferably 2.5 eV or more, more preferably 3 eV or more.

  For example, the oxide semiconductor layer 114b contains In or Ga, typically, an In—Ga oxide, an In—Zn oxide, or an In—M—Zn oxide (M is Al, Ti, Ga, Y, Zr). , La, Ce, Nd, or Hf), and the energy at the lower end of the conduction band is closer to the vacuum level than the oxide semiconductor layer 114a. Typically, the energy at the lower end of the conduction band of the oxide semiconductor layer 114b is And the energy at the lower end of the conduction band of the oxide semiconductor layer 114a are 0.05 eV or more, 0.07 eV or more, 0.1 eV or more, or 0.15 eV or more, 2 eV or less, 1 eV or less, 0.5 eV Or less, or 0.4 eV or less.

  For example, when the oxide semiconductor layer 114b is an In-M-Zn oxide, the atomic ratio of In and M is preferably greater than or equal to 25 atomic% and less than 75 atomic%, more preferably less than 75 atomic%. 34 atomic% or more and M is less than 66 atomic%.

  For example, an In—Ga—Zn oxide with an atomic ratio of In: Ga: Zn = 1: 1: 1 or 3: 1: 2 can be used for the oxide semiconductor layer 114a. As the oxide semiconductor layer 114b, an In—Ga—Zn oxide with an atomic ratio of In: Ga: Zn = 1: 3: 2, 1: 6: 4, or 1: 9: 6 can be used. Note that the atomic ratio of the oxide semiconductor layer 114a and the oxide semiconductor layer 114b includes a variation of plus or minus 20% of the above atomic ratio as an error.

  By using an oxide containing a large amount of Ga that functions as a stabilizer for the upper oxide semiconductor layer 114b, oxygen release from the oxide semiconductor layer 114a and the oxide semiconductor layer 114b can be suppressed. it can.

  Note that the composition is not limited thereto, and a transistor having an appropriate composition may be used depending on required semiconductor characteristics and electrical characteristics (field-effect mobility, threshold voltage, variation, and the like) of the transistor. In order to obtain necessary semiconductor characteristics of the transistor, the carrier density, impurity concentration, defect density, atomic ratio of metal element to oxygen, interatomic distance, density, and the like of the oxide semiconductor layer 114a and the oxide semiconductor layer 114b Is preferably appropriate.

  Note that although a structure in which two oxide semiconductor layers are stacked as the oxide semiconductor layer 114 is illustrated above, a structure in which three or more oxide semiconductor layers are stacked may be employed.

<< Modification 2 >>
FIG. 15B is a schematic cross-sectional view of the transistor 120 exemplified below. The transistor 120 is different from the transistors 100 and 110 in that the structure of the oxide semiconductor layer is different.

  The oxide semiconductor layer 124 included in the transistor 120 is formed by sequentially stacking an oxide semiconductor layer 124a, an oxide semiconductor layer 124b, and an oxide semiconductor layer 124c.

  The oxide semiconductor layer 124 a and the oxide semiconductor layer 124 b are provided over the insulating layer 103. The oxide semiconductor layer 124c is provided in contact with the upper surface of the oxide semiconductor layer 124b and the upper surfaces and side surfaces of the pair of electrodes 105a and 105b.

  The oxide semiconductor film described in Embodiment 6 can be applied to any one, two, or all of the oxide semiconductor layer 124a, the oxide semiconductor layer 124b, and the oxide semiconductor layer 124c. .

  For example, as the oxide semiconductor layer 124b, a structure similar to that of the oxide semiconductor layer 114a illustrated in Modification 1 can be used. For example, the oxide semiconductor layers 124a and 124c can have a structure similar to that of the oxide semiconductor layer 114b illustrated in Modification 1.

  For example, the oxide semiconductor layer 124a provided in the lower layer of the oxide semiconductor layer 124b and the oxide semiconductor layer 124c provided in the upper layer can be formed using an oxide containing a large amount of Ga that functions as a stabilizer. Release of oxygen from the layer 124a, the oxide semiconductor layer 124b, and the oxide semiconductor layer 124c can be suppressed.

  For example, when a channel is mainly formed in the oxide semiconductor layer 124b, an oxide containing a large amount of In is used for the oxide semiconductor layer 124b, and the pair of electrodes 105a and 105b is formed in contact with the oxide semiconductor layer 124b. By providing, the on-state current of the transistor 120 can be increased.

<Other configuration examples of transistor>
A structure example of a top-gate transistor to which the oxide semiconductor film of one embodiment of the present invention can be applied is described below.

  In the following, the same components as those described above or components having the same functions are denoted by the same reference numerals, and redundant description is omitted.

<Configuration example>
FIG. 16A is a schematic cross-sectional view of a top-gate transistor 150 exemplified below.

  The transistor 150 includes an oxide semiconductor layer 104 provided over the substrate 101 provided with the insulating layer 151, a pair of electrodes 105a and 105b in contact with the top surface of the oxide semiconductor layer 104, an oxide semiconductor layer 104, and a pair of electrodes An insulating layer 103 provided over 105a and 105b and a gate electrode 102 provided over the insulating layer 103 so as to overlap with the oxide semiconductor layer 104 are provided. An insulating layer 152 is provided to cover the insulating layer 103 and the gate electrode 102.

  The oxide semiconductor film described in Embodiment 6 can be applied to the oxide semiconductor layer 104 of the transistor 150.

  The insulating layer 151 has a function of suppressing diffusion of impurities from the substrate 101 to the oxide semiconductor layer 104. For example, a structure similar to that of the insulating layer 107 can be used. Note that the insulating layer 151 is not necessarily provided if not necessary.

  As the insulating layer 107, an insulating film having a blocking effect of oxygen, hydrogen, water, or the like can be used for the insulating layer 152. Note that the insulating layer 107 is not necessarily provided if not necessary.

<Modification>
Hereinafter, a structural example of a transistor that is partly different from the transistor 150 will be described.

  FIG. 16B is a schematic cross-sectional view of a transistor 160 exemplified below. The transistor 160 is different from the transistor 150 in that the structure of the oxide semiconductor layer is different.

  The oxide semiconductor layer 164 included in the transistor 160 is formed by sequentially stacking an oxide semiconductor layer 164a, an oxide semiconductor layer 164b, and an oxide semiconductor layer 164c.

  The oxide semiconductor film of one embodiment of the present invention can be applied to any one, any two, or all of the oxide semiconductor layer 164a, the oxide semiconductor layer 164b, and the oxide semiconductor layer 164c.

  For example, as the oxide semiconductor layer 164b, a structure similar to that of the oxide semiconductor layer 114a illustrated in Modification 1 can be used. For example, the oxide semiconductor layers 164a and 164c can have a structure similar to that of the oxide semiconductor layer 114b illustrated in Modification 1.

  For example, the oxide semiconductor layer 124a provided in the lower layer of the oxide semiconductor layer 164b and the oxide semiconductor layer 164c provided in the upper layer can be formed using an oxide containing a large amount of Ga that functions as a stabilizer. Release of oxygen from the layer 164a, the oxide semiconductor layer 164b, and the oxide semiconductor layer 164c can be suppressed.

  Here, when the oxide semiconductor layer 164 is formed, the oxide semiconductor layer 164c and the oxide semiconductor layer 164b are processed by etching to expose the oxide semiconductor film to be the oxide semiconductor layer 164a, and then dry etching is performed. When the oxide semiconductor film is processed to form the oxide semiconductor layer 164a, the reaction product of the oxide semiconductor film is reattached to the side surfaces of the oxide semiconductor layer 164b and the oxide semiconductor layer 164c. A side wall protective layer (also called a rabbit ear) may be formed. In addition, the reaction product may be redeposited through plasma during dry etching in addition to redeposition due to a sputtering phenomenon.

  FIG. 16C is a schematic cross-sectional view of the transistor 160 in the case where the sidewall protective layer 164d is formed on the side surface of the oxide semiconductor layer 164 as described above.

  The sidewall protective layer 164d mainly includes the same material as that of the oxide semiconductor layer 164a. The sidewall protective layer 164d may contain a component (eg, silicon) of a layer (here, the insulating layer 151) provided below the oxide semiconductor layer 164a.

  In addition, as illustrated in FIG. 16C, the side surface of the oxide semiconductor layer 164b is covered with a sidewall protective layer 164d so that the oxide semiconductor layer 164b is not in contact with the pair of electrodes 105a and 105b. When a channel is formed, an unintended leakage current when the transistor is turned off is suppressed, and a transistor having excellent off characteristics can be realized. Further, by using a Ga-rich material that functions as a stabilizer as the sidewall protective layer 164d, oxygen desorption from the side surface of the oxide semiconductor layer 164b can be effectively suppressed, and electrical characteristics can be stabilized. An excellent transistor can be realized.

  This embodiment can be implemented in appropriate combination with any of the other embodiments described in this specification.

(Embodiment 8)
In this embodiment, a configuration of a touch panel in which a touch sensor (contact detection device) as an input unit is provided over a display portion will be described with reference to FIGS. 17 and 18. In the following, description of the same parts as those in the above embodiment may be omitted.

FIG. 17A is a schematic perspective view of a touch panel 400 exemplified in this embodiment. For the sake of clarity, only representative components are shown in FIG. FIG. 17B is a schematic perspective view in which the touch panel 400 is developed.

18 is a cross-sectional view taken along the line X1-X2 of the touch panel 400 illustrated in FIG.

The touch panel 400 includes a display portion 411 sandwiched between the first substrate 401 and the second substrate 402, and a touch sensor 430 sandwiched between the second substrate 402 and the third substrate 403. Prepare.

The first substrate 401 includes a display portion 411 and a plurality of wirings 406 that are electrically connected to the display portion 411. The plurality of wirings 406 are routed to the outer periphery of the first substrate 401, and a part of them constitutes the external connection electrode 405. The external connection electrode 405 is electrically connected to the FPC 404.

<Touch sensor>
The third substrate 403 includes a touch sensor 430 and a plurality of wirings 417 that are electrically connected to the touch sensor 430. The touch sensor 430 is provided on the surface of the third substrate 403 facing the second substrate 402. The plurality of wirings 417 are routed to the outer peripheral portion of the third substrate 403, and a part of them constitutes an external connection electrode 416 for electrical connection with the FPC 415. Note that in FIG. 17B, for the sake of clarity, the electrodes, wirings, and the like of the touch sensor 430 provided on the back surface side (the back side of the paper surface) of the third substrate 403 are indicated by solid lines.

In this embodiment, an example in which a projection capacitive touch sensor is applied is shown. However, it is not limited to this. A sensor that detects that a detection target such as a finger approaches or touches from the side opposite to the side where the display element is provided can be applied.

As the sensor layer of the touch sensor, a capacitive touch sensor is preferable. Capacitive touch sensors include surface-capacitance and projection-capacitance methods. Projection-capacitance methods include self-capacitance and mutual-capacitance methods, mainly due to differences in driving methods. and so on. The mutual capacitance method is preferable because simultaneous multipoint detection is possible.

Hereinafter, a case where a projected capacitive touch sensor is applied will be described.

A touch sensor 430 illustrated in FIG. 17B is an example of a projected capacitive touch sensor. The touch sensor 430 includes an electrode 421 and an electrode 422. The electrode 421 and the electrode 422 are electrically connected to any of the plurality of wirings 417, respectively.

Here, as shown in FIGS. 17A and 17B, the electrode 422 has a shape in which a plurality of quadrilaterals are continuous in one direction. The shape of the electrode 421 is a quadrangular shape, and each of the plurality of electrodes 421 arranged in a line in a direction intersecting with the extending direction of the electrode 422 is electrically connected by a wiring 423. At this time, it is preferable to arrange so that the area of the intersection of the electrode 422 and the wiring 423 is as small as possible. With such a shape, the area of a region where no electrode is provided can be reduced, and uneven luminance of light transmitted through the touch sensor 430 can be reduced due to the difference in transmittance caused by the presence or absence of the electrode. .

Note that the shapes of the electrode 421 and the electrode 422 are not limited thereto, and various shapes can be employed. For example, a plurality of electrodes 421 may be arranged so as not to have a gap as much as possible, and a plurality of electrodes 422 may be provided apart from each other so as to form a region that does not overlap with the electrodes 421 through an insulating layer. At this time, it is preferable to provide a dummy electrode electrically insulated from two adjacent electrodes 422 because the area of regions having different transmittances can be reduced.

The configuration of the touch sensor 430 will be described with reference to FIG.

A touch sensor is provided over the second substrate 402. In the touch sensor, a sensor layer 440 is provided on one surface of a third substrate 403 with an insulating layer 424 interposed therebetween, and the sensor layer 440 is bonded to the second substrate 402 with an adhesive layer 434 interposed therebetween.

After the sensor layer 440 is formed over the third substrate 403, the second substrate 402 and the sensor layer 440 are attached to each other using the adhesive layer 434. By this method, the touch sensor can be provided by overlapping the display panel on the display panel.

For the insulating layer 424, an oxide such as silicon oxide can be used, for example. A light-transmitting electrode 421 and an electrode 422 are provided in contact with the insulating layer 424. The electrode 421 and the electrode 422 are formed by forming a conductive film by a sputtering method over the insulating layer 424 formed over the third substrate 403, and then removing unnecessary portions by a known patterning technique such as a photolithography method. It is formed by doing. As the light-transmitting conductive material, a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium is added can be used.

A wiring 438 is electrically connected to the electrode 421 or the electrode 422. A part of the wiring 438 functions as an external connection electrode that is electrically connected to the FPC 415. As the wiring 438, for example, a metal material such as aluminum, gold, platinum, silver, nickel, titanium, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium, or an alloy material including the metal material is used. it can.

The electrode 422 is provided with a plurality of stripes extending in one direction. The electrode 421 is provided so that one electrode 422 is sandwiched between a pair of electrodes 421, and a wiring 432 that electrically connects them is provided so as to intersect the electrode 422. Here, the plurality of electrodes 421 that are electrically connected to each other by one electrode 422 and the wiring 432 are not necessarily provided to be orthogonal to each other, and an angle formed by them may be less than 90 degrees.

An insulating layer 433 is provided so as to cover the electrode 421 and the electrode 422. As a material used for the insulating layer 433, for example, an inorganic insulating material such as silicon oxide, silicon oxynitride, or aluminum oxide can be used in addition to a resin such as acrylic or epoxy, a resin having a siloxane bond. The insulating layer 433 is provided with an opening reaching the electrode 421 and a wiring 432 electrically connected to the electrode 421. The wiring 432 is preferably formed using a light-transmitting conductive material similar to the electrodes 421 and 422 because the aperture ratio of the touch panel is increased. The wiring 432 may be formed using the same material as the electrodes 421 and 422, but a material having higher conductivity is preferably used.

An insulating layer that covers the insulating layer 433 and the wiring 432 may be provided. The insulating layer can function as a protective layer.

The insulating layer 433 (and the insulating layer functioning as a protective layer) is provided with an opening reaching the wiring 438, and the FPC 415 and the wiring 438 are electrically connected to each other by the connection layer 439 provided in the opening. ing. As the connection layer 439, a known anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), or the like can be used.

The adhesive layer 434 that bonds the sensor layer 440 and the second substrate 402 preferably has a light-transmitting property. For example, a thermosetting resin or an ultraviolet curable resin can be used, and specifically, a resin such as acrylic, urethane, epoxy, or a resin having a siloxane bond can be used.

<Display section>
The display portion 411 includes a pixel portion 413 having a plurality of pixels. As a display element applicable to the pixel portion 413 of the display portion 411, various display elements such as an organic EL element, a liquid crystal element, a display element that performs display by an electrophoresis method, an electropowder fluid method, or the like can be used. it can.

Below, the case where a liquid crystal element is applied to a display element is demonstrated.

The liquid crystal 431 is sealed with a sealing material 436 while being sandwiched between the first substrate 401 and the second substrate 402. Note that the sealing material 436 is provided so as to surround the switching element layer 437 and the color filter layer 435.

As the sealing material 436, a thermosetting resin or an ultraviolet curable resin can be used, and an organic resin such as an acrylic resin, a urethane resin, an epoxy resin, or a resin having a siloxane bond can be used. Further, the sealing material 436 may be formed of glass frit containing low melting point glass. Further, the sealing material 436 may be formed by combining the organic resin and glass frit. For example, by providing the organic resin in contact with the liquid crystal 431 and providing a glass frit on the outside thereof, it is possible to prevent water and the like from being mixed into the liquid crystal from the outside.

The display portion 411 includes a source driver circuit 412 s and a gate driver circuit 412 g, and is sealed together with the liquid crystal 431 between the first substrate 401 and the second substrate 402.

FIG. 17B illustrates a configuration in which two source driver circuits 412 s are arranged, one on each side of the pixel portion 413, and one source driver circuit 412 s is one of the pixel portions 413. It is good also as a structure arrange | positioned along a side.

A switching element layer 437 is provided over the first substrate 401 (see FIG. 18). The switching element layer 437 includes at least a transistor, and may include an element such as a capacitor in addition to the transistor. Note that the switching element layer 437 may include a wiring, an electrode, and the like in addition to a circuit such as a driver circuit (a gate driver circuit or a source driver circuit).

A color filter layer 435 is provided on one surface of the second substrate 402. The color filter layer 435 includes a color filter that overlaps with the liquid crystal element. When the color filter layer 435 is provided with three color filters of R (red), G (green), and B (blue), a full-color liquid crystal panel can be obtained.

The color filter layer 435 is formed by, for example, a photolithography process using a photosensitive material including a pigment. Further, as the color filter layer 435, a black matrix may be provided between color filters of different colors. Further, an overcoat covering the color filter or the black matrix may be provided.

Note that one electrode of the liquid crystal element may be formed over the color filter layer 435 depending on the structure of the liquid crystal element to be used. Note that the electrode becomes a part of a liquid crystal element to be formed later. An alignment film may be provided on the electrode.

A pair of polarizing plates 445 is provided so as to sandwich the liquid crystal 431. Specifically, the first substrate 401 and the third substrate 403 are provided.

As the polarizing plate 445, a known polarizing plate may be used, and a material that can generate linearly polarized light from natural light or circularly polarized light is used. For example, a material having optical anisotropy can be used by arranging dichroic substances in a certain direction. For example, it can be prepared by adsorbing an iodine-based compound or the like on a film such as polyvinyl alcohol and stretching it in one direction. As the dichroic substance, in addition to iodine compounds, dye compounds are used. The polarizing plate 445 can be formed using a film, a film, a sheet, or a plate.

(Embodiment 9)
In this embodiment, an electronic device of one embodiment of the present invention will be described. Specifically, an electronic apparatus having a storage medium in which a program for executing the information processing method of the present invention is recorded will be described with reference to FIG.

Examples of electronic devices to which the light-emitting device is applied include a computer, a digital camera, a digital video camera, a digital photo frame, a mobile phone (also referred to as a mobile phone or a mobile phone device), a mobile information terminal, and a sound reproducing device. Specific examples of these electronic devices are shown in FIGS.

FIG. 19A illustrates a computer, which includes a main body 7201, a housing 7202, a display portion 7203, a keyboard 7204, an external connection port 7205, a pointing device 7206, and the like. Note that the computer displays the result of processing by the arithmetic device on the display portion 7203.

FIG. 19B illustrates an example of a mobile phone. A mobile phone 7400 is provided with a display portion 7402 incorporated in a housing 7401, operation buttons 7403, an external connection port 7404, a speaker 7405, a microphone 7406, and the like. Note that the cellular phone 7400 displays a result processed by the arithmetic device on the display portion 7402.

Information can be input to the cellular phone 7400 illustrated in FIG. 19B by touching the display portion 7402 with a finger or the like. In addition, operations such as making a call or creating a mail can be performed by touching the display portion 7402 with a finger or the like.

There are mainly three screen modes of the display portion 7402. The first mode is a display mode mainly for displaying an image. The first is a display mode mainly for displaying images, and the second is an input mode mainly for inputting information such as characters. The third is a display + input mode in which the display mode and the input mode are mixed.

For example, when making a call or creating a mail, the display portion 7402 may be set to a character input mode mainly for inputting characters, and an operation for inputting characters displayed on the screen may be performed. In this case, it is preferable to display a keyboard or number buttons on most of the screen of the display portion 7402.

In addition, by providing a detection device having a sensor for detecting inclination, such as a gyroscope or an acceleration sensor, in the mobile phone 7400, the orientation (vertical or horizontal) of the mobile phone 7400 is determined, and the screen display of the display portion 7402 is displayed. Can be switched automatically.

Further, the screen mode is switched by touching the display portion 7402 or operating the operation button 7403 of the housing 7401. Further, switching can be performed depending on the type of image displayed on the display portion 7402. For example, if the image signal to be displayed on the display unit is moving image data, the mode is switched to the display mode, and if it is text data, the mode is switched to the input mode.

Further, in the input mode, when a signal detected by the optical sensor of the display unit 7402 is detected and there is no input by a touch operation of the display unit 7402 for a certain period, the screen mode is switched from the input mode to the display mode. You may control.

The display portion 7402 can function as an image sensor. For example, personal authentication can be performed by touching the display portion 7402 with a palm or a finger and capturing an image of a palm print, a fingerprint, or the like. In addition, if a backlight that emits near-infrared light or a sensing light source that emits near-infrared light is used for the display portion, finger veins, palm veins, and the like can be imaged.

FIG. 19C illustrates an example of a folding computer. The foldable computer 7450 includes a housing 7451L and a housing 7451R which are connected to each other with a hinge 7454. In addition to the operation button 7453, the left speaker 7455L, and the right speaker 7455R, an external connection port 7456 (not shown) is provided on the side surface of the computer 7450. Note that when the hinge 7454 is folded so that the display portion 7452L provided in the housing 7451L and the display portion 7452R provided in the housing 7451R face each other, the display portion can be protected by the housing.

In addition to displaying images, the display portion 7452L and the display portion 7452R can input information when touched with a finger or the like. For example, an icon indicating an installed program can be selected with a finger to start the program. Alternatively, the image can be enlarged or reduced by changing the interval between the fingers touching two places of the displayed image. Alternatively, the image can be moved by moving a finger touching one place of the displayed image. It is also possible to display a keyboard image, select a displayed character or symbol by touching it with a finger, and input information.

Further, the computer 7450 can be equipped with a gyro, an acceleration sensor, a GPS (Global Positioning System) receiver, a fingerprint sensor, and a video camera. For example, by providing a detection device having a sensor for detecting the inclination, such as a gyroscope or an acceleration sensor, the orientation of the computer 7450 (vertical or horizontal) is determined, and the orientation of the screen to be displayed is automatically switched. be able to.

The computer 7450 can be connected to a network. The computer 7450 can display information on the Internet and can be used as a terminal for remotely operating other electronic devices connected to the network.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

DESCRIPTION OF SYMBOLS 10 Information processing apparatus 11 Arithmetic apparatus 12 Storage apparatus 14 Transmission path 15 Input / output interface 20 Input / output apparatus 21 Input means 22 Display unit 100 Transistor 101 Substrate 102 Gate electrode 103 Insulating layer 104 Oxide semiconductor layer 105a Electrode 105b Electrode 106 Insulating layer 107 Insulating layer 110 transistor 114 oxide semiconductor layer 114a oxide semiconductor layer 114b oxide semiconductor layer 120 transistor 124 oxide semiconductor layer 124a oxide semiconductor layer 124b oxide semiconductor layer 124c oxide semiconductor layer 150 transistor 151 insulating layer 152 insulating layer 160 Transistor 164 Oxide semiconductor layer 164a Oxide semiconductor layer 164b Oxide semiconductor layer 164c Oxide semiconductor layer 164d Side wall protective layer 200 Information 210 Image 220 Window 220i Indicator 220p Page number 400 touch panel 401 substrate 402 substrate 403 substrate 404 FPC
405 External connection electrode 406 Wiring 411 Display unit 412g Gate drive circuit 412s Source drive circuit 413 Pixel unit 415 FPC
416 External connection electrode 417 Wiring 421 Electrode 422 Electrode 423 Wiring 424 Insulating layer 430 Touch sensor 431 Liquid crystal 432 Wiring 433 Insulating layer 434 Adhesive layer 435 Color filter layer 436 Sealing material 437 Switching element layer 438 Wiring 439 Connection layer 440 Sensor layer 445 Polarization Board 500 input means 500_C signal 600 information processing device 610 control unit 615_C secondary control signal 615_V secondary image signal 620 arithmetic device 625_C primary control signal 625_V primary image signal 630 display unit 631 pixel unit 631a region 631b region 631c region 631p pixel 632G Drive circuit 632_G G signal 633 S drive circuit 633_S S signal 634 Pixel circuit 634c Capacitance element 634t Transistor 635 Display element 635LC Liquid crystal element 650 Light supply unit 701 Computing device 702 Storage device 703 Graphic unit 704 Display means 7201 Main body 7202 Case 7203 Display unit 7204 Keyboard 7205 External connection port 7206 Pointing device 7400 Mobile phone 7401 Case 7402 Display unit 7403 Operation button 7404 External connection port 7405 Speaker 7406 Microphone 7450 Computer 7451L Case 7451R Case 7451L Display unit 7451R Display unit 7453 Operation button 7454 Hinge 7455L Left speaker 7455R Right speaker 7456 External connection port

Claims (5)

The first still image including information processed by the arithmetic device can be displayed easily on the eyes having a plurality of pixels that do not include light having a wavelength shorter than 420 nm as display light and have a resolution of 150 ppi or more. A first step of displaying as a display image in a window of the display unit;
A second step of inputting a display feed command including direction and speed information to the arithmetic unit using an input means;
The counter value is incremented by 1 after the elapse of a predetermined waiting time, and the distance obtained from the product of the speed, the waiting time and the counter value is equal to or greater than a predetermined distance, And displaying the still image as a display image on the window and resetting the counter, and displaying an image including information processed by the arithmetic unit. The first still image including information processed by the arithmetic device can be displayed easily on the eyes having a plurality of pixels that do not include light having a wavelength shorter than 420 nm as display light and have a resolution of 150 ppi or more. A first step of displaying as a display image in a window of the display unit;
A second step of inputting a display feed command including direction and speed information to the arithmetic unit using an input means;
A third step of resetting the first counter and the second counter to obtain the length of the window in the display feed direction and the waiting time;
A fourth step of adding 1 to the values of the first counter and the second counter, reducing the speed of the display feed command according to the value of the second counter, and waiting for the waiting time;
A fifth step of calculating a distance by calculating a product of the speed of the display advance command, the waiting time, and the value of the first counter;
A sixth step that proceeds to a seventh step if the distance is greater than or equal to the length of the window in the display feed direction, and a fourth step that otherwise proceeds;
A seventh step of resetting the first counter and displaying, as a display image, a second still image that is separated from the display image by the distance in the direction of the display advance command and that is continuous with the display image as a display image on the window; When,
An eighth step proceeds to the ninth step when a display still command is input, and proceeds to a fourth step otherwise;
A ninth step of displaying the display image,
An information processing method for displaying an image including information processed by the arithmetic device.   The information processing method according to claim 1 or 2, wherein the display image is gradually switched from the display image to a second still image continuous to the display image.   The information processing method according to claim 1 or 2, wherein the display image is displayed at a frequency of 1 Hz or less. In an information processing apparatus having a display unit that does not include light with a wavelength shorter than 420 nm in display light and includes a plurality of pixels provided with a resolution of 150 ppi or more and that can perform an eye-friendly display.
A first step of displaying a first still image including information processed by the arithmetic device as a display image on the window of the display unit;
A second step of inputting a display feed command including direction and speed information to the arithmetic unit using an input means ;
The counter value is incremented by 1 after elapse of a predetermined standby time, and the distance obtained from the product of the speed, the standby time and the counter value is continuous with the first still image when the distance is equal to or greater than the predetermined distance. And a third step of displaying a second still image as a display image on the window and resetting the counter.