JP6060527B2 - Semiconductor package - Google Patents

Description

  The present application relates to a lid for a semiconductor package and a semiconductor package.

In recent years, the number of components mounted on a semiconductor package tends to increase (see, for example, Patent Document 1). For example, if each component such as a CPU (Central Processing Unit) and a memory is mounted on a semiconductor package, the electronic device can be reduced in size and performance can be improved.

Japanese Patent Laid-Open No. 2007-95860

  When a semiconductor package on which a large number of components are mounted fails, it is desirable to replace the component causing the failure. However, when the component is enclosed in the semiconductor package, it is difficult to replace the component.

  Further, when the area of the substrate increases due to an increase in the number of components mounted on the semiconductor package, the following problems may occur. For example, the semiconductor package is electrically connected to an electronic substrate on which electronic components other than the semiconductor package are mounted via a large number of solder balls formed on the lower surface. In this case, if a contact failure occurs in the solder ball formed on the lower surface of the semiconductor package, there is a risk that a malfunction may occur in the operation of the electronic device. One of the causes of poor contact of solder balls is, for example, nonuniformity in the height of the tips of the solder balls. The cause of the uneven height of the tip of the solder ball includes, for example, the warpage of the substrate of the semiconductor package in addition to the processing accuracy when forming the solder ball. The variation in the height of the solder ball tip due to the warpage of the substrate of the semiconductor package becomes more significant as the area of the substrate of the semiconductor package increases.

  Therefore, the present application has an object to provide a lid for a semiconductor package and a semiconductor package capable of correcting the warp of the substrate while allowing physical access to the mounted components in the flip chip mounting type semiconductor package. To do.

The present application discloses the following lid for a semiconductor package.
A lid for a semiconductor package covering a substrate on which a semiconductor chip and other components are mounted,
A plate material bonded to the substrate;
A recess formed on the surface of the plate to which the substrate is bonded, and housing the semiconductor chip;
A through-hole portion that is formed in a position different from the concave portion and is opened on both surfaces of the plate material, and accommodates the other components.
A lid for semiconductor packages.

The present application also discloses the following semiconductor package.
A substrate on which a semiconductor chip and other components are mounted;
A plate material bonded to the substrate;
A recess formed on the surface of the plate to which the substrate is bonded, and housing the semiconductor chip;
A through-hole portion that is formed in a position different from the concave portion and is opened on both surfaces of the plate material, and accommodates the other components.
Semiconductor package.

  The lid for the semiconductor package and the semiconductor package can correct the warpage of the substrate while allowing physical access to the mounted components.

It is an example of the figure which showed the lid | cover for semiconductor packages which concerns on embodiment. It is an example of sectional drawing at the time of cut | disconnecting a board | plate material with the line | wire shown by code | symbol BB in FIG. It is an example of sectional drawing at the time of cut | disconnecting a board | plate material with the line | wire shown by code | symbol AA in FIG. It is the figure which showed an example of the positional relationship with the recessed part and through-hole part with which a cover was equipped, and the semiconductor chip and other components mounted in the board | substrate covered with a cover. It is an example of the top view of the semiconductor package which adhere | attached the lid | cover on the board | substrate. FIG. 6 is an example of a cross-sectional view when the semiconductor package is cut along a line indicated by a symbol CC in FIG. 5. FIG. 6 is an example of a cross-sectional view when the semiconductor package is cut along a line indicated by reference sign DD in FIG. 5. It is an example of the figure which showed the modification of the communication part. It is an example of the perspective view which looked at the lid | cover for semiconductor packages which concerns on a prior art from diagonally lower side. It is an example of the internal structure figure of the semiconductor package which adhered the lid | cover for semiconductor packages based on a prior art to the board | substrate. It is an example of the figure which showed the state which removed the lid | cover for semiconductor packages which concerns on a prior art from the board | substrate. It is an example of the figure which showed the state which removed the other components mounted in the board | substrate. It is an example of the figure which showed the semiconductor package which concerns on the prior art which remove | eliminated the lid | cover and the heat conductive material. It is an example of the figure which showed the adhesion part of a lid | cover and a board | substrate when the semiconductor package which concerns on embodiment is seen from the upper side. It is an example of the figure which showed the adhesion part of a lid | cover and a board | substrate at the time of seeing the semiconductor package which concerns on a prior art from the upper side. It is an example of the figure which showed an example of the internal structure of the semiconductor package which attached the radiation fin. It is an example of the internal structure figure of the semiconductor package which attached the radiation fin which concerns on a modification. It is an example of the internal structure figure of the semiconductor package which concerns on the prior art which attached the radiation fin. It is an example of the top view which showed an example of the semiconductor package which attached the radiation fin which concerns on a modification. It is an example of sectional drawing at the time of cut | disconnecting the semiconductor package which concerns on this modification with the line shown with the code | symbol EE in FIG. It is an example of the figure which showed the internal structure of the semiconductor package based on the prior art which attached the radiation fin. It is an example of the top view of the semiconductor package which concerns on a 1st modification. FIG. 22 is an example of a cross-sectional view in the case where the semiconductor package is cut along a line indicated by a symbol FF in FIG. 21. FIG. 22 is an example of a cross-sectional view in the case where the semiconductor package is cut along a line indicated by reference sign GG in FIG. 21. It is an example of the top view of the semiconductor package which concerns on a 2nd modification. FIG. 25 is an example of a cross-sectional view of the semiconductor package according to the present modification taken along the line HH in FIG. 24. FIG. 25 is an example of a cross-sectional view when the semiconductor package according to the present modification is cut along a line indicated by reference numeral II in FIG. 24.

  Hereinafter, embodiments of the present invention will be described. The embodiment described below exemplifies one aspect of the present invention, and does not limit the technical scope of the present invention to the following aspect.

<Embodiment>
FIG. 1 is an example of a diagram illustrating a lid for a semiconductor package according to the present embodiment. A lid 1 for a semiconductor package according to the present embodiment is a lid for a semiconductor package that covers a substrate on which a semiconductor chip and other components are mounted, and includes a plate 2. The plate member 2 is a member bonded to the substrate so as to cover the substrate on which the semiconductor chip and other components are mounted. Therefore, it is preferable that the board | plate material 2 is formed with the material which does not prevent the heat dissipation of a semiconductor chip or another component. Further, as will be described later, since the lid 1 for a semiconductor package has a function of correcting the warp of the substrate, it is preferably formed of a material that does not easily soften due to a temperature rise. Furthermore, examples of the material that has a function as a heat radiator, has excellent heat transfer properties, and does not easily soften due to a temperature rise include copper and other various metals having high thermal conductivity.

  FIG. 2 is an example of a cross-sectional view when the plate member 2 is cut along a line indicated by AA in FIG. Moreover, FIG. 3 is an example of a cross-sectional view when the plate member 2 is cut along a line indicated by reference numeral BB in FIG. As shown in FIGS. 1 to 3, the plate member 2 has a concave portion 4 formed on a surface (hereinafter referred to as an adhesive surface) 3 to which the substrate is bonded, between the adhesive surface 3 of the plate member 2 and the surface on the back side thereof. And a communication portion 6 that communicates the recess 4 and the through-hole portion 5 with each other.

  FIG. 4 is a diagram showing an example of the positional relationship between the recess 4 and the through-hole portion 5 provided in the lid 1 and the semiconductor chip 12 and other components 13 mounted on the substrate 11 covered by the lid 1. is there. As shown in FIG. 4, the recess 4 is formed in a portion corresponding to the semiconductor chip 12 mounted on the substrate 11. In addition, the through-hole portion 5 is formed in a portion corresponding to another component 13 mounted on the substrate 11.

  FIG. 5 is an example of a top view of the semiconductor package 10 in which the lid 1 is bonded to the substrate 11. Since the lid 1 is provided with the through-hole portion 5, as shown in FIG. 5, even when the substrate 11 is covered with the plate material 2 of the lid 1, the other side is provided through the through-hole portion 5 from the upper side of the lid 1 Can be physically accessed. Therefore, for example, when any one of the other components 13 accommodated in the through-hole portion 5 fails or a contact failure occurs in the bonding between the component and the board, the component is replaced without removing the lid 1. Is possible.

  2 to 4, the inner wall of the through-hole portion 5 is illustrated so as to rise vertically from the substrate 11. However, the through-hole part 5 is not limited to such a shape. In the through-hole portion 5, for example, the size of the opening on the bonding surface 3 side may be narrower than the size of the opening on the opposite side to the bonding surface 3. If the size of the opening on the bonding surface 3 side of the through-hole portion 5 is narrower than the size of the opening on the side opposite to the bonding surface 3, the area of the bonding surface 3 in contact with the substrate 11 is increased. It is possible to increase power.

FIG. 6 is an example of a cross-sectional view of the semiconductor package 10 taken along the line CC in FIG. In a state where the lid 1 is bonded to the substrate 11, the semiconductor chip 12 is bonded to the lid 1 via a thermally conductive material (TIM: Thermal Interface Material) 14 as shown in FIG. 6. Therefore, the heat generated in the semiconductor chip 12 is transmitted to the lid 1 via the heat conductive material 14.

  FIG. 7A is an example of a cross-sectional view when the semiconductor package 10 is cut along a line indicated by reference sign DD in FIG. Various materials have been devised for transferring heat. For example, when a material obtained by blending a volatile solvent with a powder material having high thermal conductivity or the like is used as the heat conducting material 14, the heat conducting material 14 is used. There is a possibility that a component that evaporates in the process of hardening is confined in the recess 4. When the solvent component or the like evaporates in the sealed space, the pressure in the space increases. If the pressure in the recess 4 is higher than the outside, the residual pressure may adversely affect the reliability of the semiconductor package 10. However, since the communication package 6 is provided in the lid 1 for a semiconductor package according to this embodiment, the components volatilized in the recess 4 are released to the outside through the communication 6 and the through hole 5. The Therefore, the pressure in the recess 4 is not kept higher than the outside.

  The communication portion 6 is not limited to the concave groove formed on the bonding surface 3 of the plate member 2. That is, the communication part 6 may be any one as long as it can communicate the recess 4 and the through-hole part 5 with the plate member 2 bonded to the substrate 11.

  Further, the communication part 6 can be omitted from the lid 1. For example, when the heat conductive material 14 does not evaporate various components, the communication section 6 can be omitted because the problem of residual pressure does not occur even if the recess 4 is a sealed space.

  FIG. 7B is an example of a diagram illustrating a modified example of the communication unit 6. In view of the purpose of preventing the residual pressure remaining in the recess 4, the communicating portion 6 is limited to a size required to make the pressure in the recess 4 the same as the outside, as shown in FIG. 7B, for example. Also good. If the size of the communication portion 6 is limited to a size necessary for making the pressure in the concave portion 4 the same as that of the outside, it is possible to reduce the possibility that foreign matter or the like enters the concave portion 4. is there.

  FIG. 8 is an example of a perspective view of a lid 101 for a semiconductor package according to the prior art as viewed obliquely from below. As shown in FIG. 8, a lid 101 for a semiconductor package according to the prior art includes a plate-like plate material 102 bonded to a substrate so as to cover the substrate. A recess 104 is formed in the bonding surface 103 of the plate material 102. Unlike the recess 4 according to the present embodiment, the recess 104 provided in the lid 101 for a semiconductor package according to the prior art comprehensively accommodates all components mounted on the substrate. When such a lid 101 is used, for example, there are the following problems.

  FIG. 9 is an example of an internal structure diagram of a semiconductor package 110 in which a semiconductor package lid 101 according to the prior art is bonded to a substrate 111. The recess 104 provided in the lid 101 comprehensively accommodates the semiconductor chip 112 and other components 113 mounted on the substrate 111. Further, the lid 101 does not have openings corresponding to the through hole 5 provided in the lid 1. Therefore, in a state where the substrate 111 is covered with the lid 101, physical access to the other components 113 from the upper side of the lid 101 is impossible. Therefore, for example, when any component housed in the recess 104 fails or a contact failure occurs in the bonding between the component and the substrate, the lid 101 needs to be removed to replace the component.

FIG. 10 is an example of a diagram showing a state in which the lid 101 for a semiconductor package according to the prior art is removed from the substrate 111. FIG. 11 is an example of a diagram illustrating a state in which another component 113 mounted on the substrate 111 is removed. For example, as shown in FIG. 10, by removing the lid 101 from the substrate 111, the semiconductor chip 112 and other components 113 covered by the lid 101 are exposed to the outside and are physically accessible. Become. As a result, for example, as shown in FIG. 11, it is possible to remove another component 113 mounted on the substrate 111 and replace it with a normal component.

  FIG. 12 is an example of a diagram illustrating a semiconductor package 110 according to the prior art from which the lid 101 and the heat conductive material 114 are removed. For example, when the lid 101 is attached again to the substrate 111 after replacement of components mounted on the substrate 111, it is necessary to bond the semiconductor chip 112 to the lid 101 with a thermally conductive material. Therefore, it is necessary to remove the heat conductive material 114 remaining on the semiconductor chip 112.

  As described above, when the lid 101 for a semiconductor package according to the prior art is used, for example, when replacing a component mounted on the substrate 111, it is necessary to remove the lid 101 or remove the heat conductive material 114. There is. That is, the semiconductor package 110 using the lid 101 according to the prior art requires a great deal of time to replace the components, so that a component mounted on the substrate 111 has failed or a contact failure has occurred in the bonding between the component and the substrate. In such a case, the semiconductor package 110 must be discarded. On the other hand, in the case of the semiconductor package 10 according to the present embodiment, the other components 13 among the components mounted on the substrate 11 are arranged in the through-hole portion 5 that is physically accessible from the outside. It is possible to replace parts without removing the lid 1.

  Further, in the case of the semiconductor package 10 according to the present embodiment, the other components 13 can be attached to the substrate 11 after the lid 1 and the substrate 11 are bonded. Therefore, by attaching the other component 13 to the substrate 11 at the final stage of the manufacturing process of the semiconductor package 10, it is possible to reduce the thermal influence applied to the other component 13.

  FIG. 13 is an example of a diagram illustrating a bonding portion between the lid 1 and the substrate 11 when the semiconductor package 10 according to the present embodiment is viewed from the upper side. The lid 1 for a semiconductor package according to the present embodiment is formed by forming a recess 4 in the center of the bonding surface 3 of a plate-like plate material 2 and forming a through hole 5 around the recess 4. Therefore, a portion of the bonding surface 3 of the plate member 2 where the concave portion 4, the through-hole portion 5, and the communication portion 6 are not formed comes into contact with and adheres to the substrate 11. For example, in the case of the lid 1 for a semiconductor package according to the present embodiment, the bonding portions 15 are formed in a lattice shape as shown in FIG.

  FIG. 14 is an example of a diagram illustrating a bonding portion between the lid 101 and the substrate 111 when the semiconductor package 110 according to the related art is viewed from the upper side. A lid 101 for a semiconductor package according to the prior art is formed by forming a recess 104 in the adhesive surface 103 of a plate-like plate material 102 to accommodate all components mounted on a substrate 111. Therefore, a region of the bonding surface 103 of the plate member 102 where the concave portion 104 is not formed is an edge portion of the lid 1. For this reason, the adhesion part 115 is formed in the edge part of the lid | cover 101, as shown in FIG.

  As is apparent from a comparison of FIGS. 13 and 14, the semiconductor package 10 according to the present embodiment has more bonding portions between the substrate 11 and the lid 1 than the semiconductor package 110 according to the related art. In particular, in the semiconductor package 10 according to the present embodiment, the vicinity of the center of the substrate 11 that is not bonded in the semiconductor package 110 according to the related art, in other words, the periphery of the semiconductor chip 12 is bonded to the lid 1. Therefore, the semiconductor package 10 according to the present embodiment has a higher effect of correcting the warpage of the substrate 11 than the semiconductor package 110 according to the related art.

That is, in the semiconductor package 10 according to this embodiment, since the warpage of the substrate 11 is corrected, the semiconductor package 110 according to the related art in which the central portion of the substrate is not bonded to the lid.
Compared to the above, the variation in the height of the solder ball tip due to the warpage of the substrate is small. Therefore, the possibility that the error in the height of the tip of each solder ball deviates from the range of errors allowed for the semiconductor package as a product is reduced, and the occurrence of defective products can be reduced.

  FIG. 15 is an example of a diagram illustrating an example of the internal structure of the semiconductor package 10 to which the radiation fins 20 are attached. For example, as shown in FIG. 15, the semiconductor package 10 may be provided with heat radiating fins 20 that are bonded to the lid 1 and other components 13 with a heat conductive material 14. When the radiation fins 20 are attached to the semiconductor package 10, the heat generated in the semiconductor chip 12 and other components 13 is effectively radiated by the radiation fins 20.

  When attaching the heat radiation fin 20 to the semiconductor package 10, for example, heat of the other component 13 is transferred to the base material 21 at a position corresponding to the other component 13 on the lower surface of the base material 21 provided with a large number of fins. It is desirable to provide the convex part 22 which does. By providing the convex portions 22, it is possible to dissipate heat generated in the other components 13 from the heat radiation fins 20. For example, a water-cooled heat radiating member or other various heat radiating members can be attached to the semiconductor package 10 instead of the heat radiating fins 20.

  FIG. 16 is an example of an internal structure diagram of the semiconductor package 10 to which the radiation fins 20A according to the modification are attached. For example, when the other component 13 is a component that does not require heat radiation by the heat radiation fin 20, the convex portion 22 attached to the heat radiation fin 20 can be omitted.

  FIG. 17 is an example of an internal structure diagram of the semiconductor package 110 according to the prior art to which the heat radiation fin 120 is attached. For example, as shown in FIG. 17, the semiconductor package 110 may be provided with heat radiating fins 120 that are bonded to the lid 101 with a heat conductive material 114. When the radiation fins 120 are attached to the semiconductor package 110, the heat generated in the semiconductor chip 112 is effectively radiated by the radiation fins 120. However, since the other components 113 are not bonded to the lid 101 with a heat conductive material, the heat generated in the other components 113 is not radiated to the radiating fins 120.

  Also, if another component 113 is bonded to the lid 101 with a heat conductive material, the following problem may occur. For example, when another component 113 that generates less heat than the semiconductor chip 112 is bonded to the lid 101 with a heat conductive material, the lid 101 serves as a heat conductive material, and the heat of the semiconductor chip 112 is transferred to the other component 113. May be transmitted. For this reason, if the other component 113 is bonded to the lid 101 with a heat conductive material, the other component 113 may be further heated.

  On the other hand, with the semiconductor package 10 according to the present embodiment, the heat of the other components 13 can be directly transmitted to the radiation fins 20. Therefore, it is possible to suppress the possibility that heat is transferred from the semiconductor chip 12 to the other component 13 as compared to the semiconductor package 110 according to the related art. As shown in FIG. 15, when the lid 1 and the other component 13 are bonded to the heat radiation fin 20 with the heat conductive material 14, the heat of the semiconductor chip 12 is transmitted to the other component 13 through the heat radiation fin 20. obtain. However, the radiation fin 20 is cooled with air. Therefore, the amount of heat transferred from the semiconductor chip 12 to the other component 13 via the heat radiation fin 20 is less than the amount of heat transferred from the semiconductor chip 112 to the other component 113 via the lid 101. Conceivable. Therefore, even when components having different heat resistance are mounted on the semiconductor package 10, it is possible to mitigate the thermal influence on the components having low heat resistance.

FIG. 18 is an example of a top view illustrating an example of the semiconductor package 10 to which the radiation fins 20A1 and 20A2 according to the modification are attached. When it is desired to suppress the amount of heat of the semiconductor chip 12 transmitted from the semiconductor chip 12 to the other components 13 via the radiation fins, the radiation fins can be configured as follows, for example. That is, for example, as shown in FIG. 18, the radiating fin 20 </ b> A <b> 1 that cools the other components 13 may be separated from the radiating fin 20 </ b> A <b> 2 that removes the heat of the semiconductor chip 12.

  FIG. 19 is an example of a cross-sectional view of the semiconductor package 10 according to the present modification taken along the line EE in FIG. When the radiating fin 20A1 that cools the other components 13 is separated from the radiating fin 20A1 that removes the heat of the semiconductor chip 12, a member that forms the radiating fin 20A1 between the radiating fin 20A1 and the radiating fin 20A1. In other words, a void having a lower thermal conductivity is interposed. Therefore, the amount of heat transferred from the semiconductor chip 12 to the other components 13 via the heat radiation fins 20A1 and 20A2 can be reduced as compared with the case where the heat radiation fins 20 are attached to the semiconductor package 10.

  FIG. 20 is an example of a diagram illustrating an internal structure of a semiconductor package according to the related art to which a radiation fin is attached. For example, in the case of the semiconductor package 110A in which the lid 101A that covers the semiconductor chip 112A and does not cover the other components 113A is attached, the lid 101A and the other components 113A are attached to the lid 101A with a heat conductive material 114 as shown in FIG. It is also possible to bond. In this case, the problem of heat dissipation existing in the semiconductor package 110 can be solved. However, since the lid 101A of the semiconductor package 110A is bonded to the central portion of the substrate 111A, it is structurally impossible to correct the warp of the substrate 111A.

  FIG. 21 is an example of a top view of the semiconductor package 10A according to the first modification. For example, the semiconductor package 10 according to the embodiment may be modified so that two semiconductor chips 12A1 and 12A2 can be mounted on a substrate. For example, the lid 1A of the semiconductor package 10A shown in FIG. 21 is provided with a through-hole portion 5A that accommodates another component 13A. Therefore, the semiconductor package 10A can physically access the other components 13A without removing the lid 1A.

  FIG. 22 is an example of a cross-sectional view of the semiconductor package 10A taken along the line indicated by the reference sign FF in FIG. When two semiconductor chips 12A1 and 12A2 are mounted on the substrate 11A, the lid 1A used for the semiconductor package 10A is formed with, for example, two recesses 4A1 and 4A2 each having a size capable of accommodating the semiconductor chips 12A1 and 12A2. You may do it.

  FIG. 23 is an example of a cross-sectional view of the semiconductor package 10A taken along the line GG in FIG. A member that contacts the substrate 11A is left between the recess 4A1 and the recess 4A2 so as to partition the recess 4A1 and the recess 4A2, and is bonded to the substrate 11A. Therefore, the semiconductor package 10A according to the present modification has a higher effect of correcting the warp of the substrate 11 than the semiconductor package 110 according to the related art.

  FIG. 24 is an example of a top view of a semiconductor package 10B according to the second modification. For example, as shown in FIG. 24, when the number of other components 13B arranged around the semiconductor chip 12B is relatively small, the through-hole portion 5B is limited to a size necessary for accommodating the other components 13B. May be. If the through-hole portion 5B is limited to a size necessary for accommodating another component 13B, the area of the bonding portion between the lid 1B and the substrate increases, and the rigidity of the lid 1B is improved, so that the warpage of the substrate is corrected. It is possible to enhance the effect.

FIG. 25 is an example of a cross-sectional view of the semiconductor package 10B according to the present modification taken along the line HH in FIG. The lid 1B is formed with a communication portion 6B that allows the recess 4B and the through hole portion 5B to communicate with each other. Therefore, for example, even when a material obtained by blending a volatile solvent with a heat conductive powder material or the like is used as the heat conductive material 14B, the components volatilized in the recesses 4B are separated from the communicating portion 6B and the through hole portion. It is discharged to the outside through 5B. Therefore, the pressure in the recess 4B is not kept higher than the outside.

  FIG. 26 is an example of a cross-sectional view of the semiconductor package 10B according to the present modification taken along the line II in FIG. A member that contacts the substrate 11B is left between the recess 4B and the communication portion 6B so as to partition the recess 4B and the communication portion 6B, and is bonded to the substrate 11B. Therefore, the semiconductor package 10B according to this modification has a higher effect of correcting the warp of the substrate 11B than the semiconductor package 110 according to the related art.

1, 1A, 1B, 101, 101A ... Lid: 2, 102 ... Plate material: 3, 103 ... Adhesive surface: 4, 4A1, 4A2, 4B, 104 ... Recess: 5, 5A, 5B ... Through-hole Part: 6, 6B Communication unit: 10, 10A, 10B, 110, 110A Semiconductor package: 11, 11A, 11B, 111, 111A Substrate: 12, 12A1, 12A2, 12B, 112, 112A Semiconductor chip: 13, 13A, 13B, 113, 113A .. Other parts: 14, 14B, 114 .. Thermal conductive material: 15, 115 .. Adhesive parts: 20, 20A, 20A1, 20A2, 120, 120A .. Radiating fins: 21 .. Base material: 22 .. Projection:

Claims (2)

A substrate,
The semiconductor chip and other parts products mounted on the substrate,
A plate material bonded to the substrate ,
A recess formed on the surface of the plate to which the substrate is bonded, and housing the semiconductor chip;
Is formed at a position different from the concave portion is opened on both sides of the plate, to accommodate the other components, and a large through hole in a plan view than entirely the other part,
Semiconductor package. A first heat radiating member adhered to the plate,
Further comprising a second heat radiating member adhered to the other parts housed in the through hole,
The semiconductor package according to claim 1 .

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