JP6050717B2 - Semiconductor device and manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device.

  2. Description of the Related Art Conventionally, a semiconductor device that is used by being surface-mounted on a substrate via a side surface portion of a case and a connector is known (for example, see Patent Document 1).

  FIG. 9 is a diagram for explaining a conventional semiconductor device 900. FIG. 9A is a side sectional view of a conventional semiconductor device 900, and FIG. 9B is a plan view of the conventional semiconductor device 900 viewed from the arrow A side in FIG. 9A. In FIG. 9, illustration of solder is omitted.

  As shown in FIG. 9, the conventional semiconductor device 900 includes a bowl-shaped case 910 having an opening, a semiconductor chip 920, a connector 930, and a resin 940 filled in the case 910.

  The case 910 is a conductive case having a bottom surface portion 911, a side surface portion 912 erected on the outer edge of the bottom surface portion 911, and a convex base portion 913 formed at the center of the inner surface of the bottom surface portion 911. A part of the side surface portion 912 of the case 910 constitutes a first external terminal portion 914 for connection to an external circuit.

  The semiconductor chip 920 is disposed on the upper surface of the base portion 913 with one surface 922 joined to the upper surface of the base portion 913 via solder (not shown).

  The connector 930 has one end joined to the other surface 924 of the semiconductor chip 920 via solder and the other end is led out of the case 910 on the other surface 924 of the semiconductor chip 920. It is arranged.

  The connector 930 is located on one end side and is connected to the other surface of the semiconductor chip 920 via solder, and the connector 930 is located on the other end side and is connected to an external circuit. Two external terminal portions 932 and a connecting portion 933 sandwiched between the semiconductor chip bonding portion 931 and the second external terminal portion 932. The semiconductor chip bonding portion 931 and the connecting portion 933 are connected so as to have a structure bent toward the opening side of the case 910 at the end of the semiconductor chip bonding portion 931.

  In the conventional semiconductor device 900, electrodes (not shown) are respectively formed on one surface 922 and the other surface 924 of the semiconductor chip 920, and the electrode and base formed on the one surface 922 of the semiconductor chip 920 are formed. The part 913 is electrically connected via solder, and the electrode formed on the other surface 924 of the semiconductor chip 920 and the semiconductor chip bonding part 931 are electrically connected via solder.

  In the conventional semiconductor device 900, the connection surface 915 with the external circuit in the first external terminal portion 914 and the connection surface 934 with the external circuit in the second external terminal portion 932 are on the same plane.

  According to the conventional semiconductor device 900, since it has the convex base portion 913 disposed at the center of the inner surface of the bottom surface portion 911, the process of joining the semiconductor chip 920 to the upper surface of the base portion 913 via solder. When the solder disposed on the upper surface of the base portion 913 is melted, the melted solder tends to stay on the upper surface of the base portion 913 due to surface tension. Therefore, a sufficient amount of solder for joining one surface of the semiconductor chip 920 and the upper surface of the base portion 913 can be secured to the upper surface of the base portion 913, and the base portion 913 and the semiconductor chip 920 are strongly bonded. It becomes a semiconductor device bonded with strength.

  In addition, according to the conventional semiconductor device 900, since the electrode formed on one surface of the semiconductor chip 920 and the base portion 913 of the case 910 are electrically connected via solder, one surface of the semiconductor chip 920 is provided. The electrode formed on the base 913 and the base portion 913 are electrically connected, and the case 910 can be used as an external terminal.

  Further, according to the conventional semiconductor device 900, since the semiconductor chip 920 is disposed on the upper surface of the base portion 913 of the case 910 and the resin 940 is filled in the case, heat generated from the semiconductor chip 920 is obtained. Can be effectively radiated to the outside through the case 910 and the resin 940.

  In addition, according to the conventional semiconductor device 900, a part of the side surface portion 912 of the case 910 constitutes the first external terminal portion 914 for connecting to an external circuit, and thus is disposed inside the case 910. The heat generated from the semiconductor chip 920 thus formed can be effectively radiated to the external circuit via the first external terminal portion 914.

  Furthermore, according to the conventional semiconductor device 900, the connection surface 915 with the external circuit in the first external terminal portion 914 and the connection surface 934 with the external circuit in the second external terminal portion 932 are on the same plane. It becomes possible to stably attach to an external circuit formed on a planar substrate.

Japanese Patent Laid-Open No. 11-8336

  However, in the conventional semiconductor device 900, when melting the solder disposed in a predetermined region of the bottom surface portion 911 in order to join the bottom surface portion 911 and the base portion 913 via the solder, the molten solder is not in the region. The base portion 913 may be displaced by being dragged by the flowing solder. For this reason, even if the semiconductor chip 920 is accurately positioned and disposed with respect to the base portion 913, the base portion 913 may be displaced from a predetermined region of the bottom surface portion 911. It may be difficult to accurately position the position. As a result, there is a problem that it may be difficult to obtain a highly reliable semiconductor device with high dimensional accuracy.

  Therefore, the present invention has been made to solve such a problem, and it is possible to accurately position the semiconductor chip with respect to the case. As a result, the semiconductor device has high dimensional accuracy and high reliability. The purpose is to provide. Another object of the present invention is to provide a semiconductor device manufacturing method for manufacturing such a semiconductor device.

[1] The semiconductor device of the present invention is a bowl-shaped case having an opening, and is formed at the bottom surface, a side surface erected on the outer edge of the bottom surface, and the center of the inner surface of the bottom surface. A conductive case having a convex base portion, a semiconductor chip disposed on the upper surface of the base portion with one surface bonded to the upper surface of the base portion via solder, and one end portion In a state where the other end of the semiconductor chip is joined via solder and the other end is led out of the case, a connector disposed on the other surface of the semiconductor chip, and a surface, A side surface portion of the case, wherein the side surface portion of the case is provided with a resin that is in contact with the end portion of the case and that is flush with the end portion of the case or is concave on the bottom surface side. Part of the first external end for connecting to an external circuit The connector is located on one end side and is connected to the other surface of the semiconductor chip via solder, and is connected to an external circuit located on the other end side. A second external terminal portion and a connecting portion sandwiched between the semiconductor chip joint portion and the second external terminal portion, wherein the semiconductor chip joint portion and the connecting portion are the semiconductor chip It is connected so as to be bent to the opposite side of the bonding surface with the semiconductor chip at the end of the bonding portion, and electrodes are formed on the one surface and the other surface of the semiconductor chip, The electrode formed on one surface of the semiconductor chip and the base portion are electrically connected via solder, and the electrode formed on the other surface of the semiconductor chip and the semiconductor chip joint portion are soldered. Through electrically The connection surface of the first external terminal portion to the external circuit and the connection surface of the second external terminal portion to the external circuit are on the same plane, and the outer shape of the upper surface of the base portion is A semiconductor device having an outer shape corresponding to the outer shape of one surface of the semiconductor chip, wherein the outer shape of the semiconductor chip bonding portion has an outer shape corresponding to the outer shape of the other surface of the semiconductor chip, the bottom surface portion, the side surface The portion and the base portion are integrally formed from the same metal member.

[2] In the semiconductor device of the present invention, it is preferable that a recess is provided in the center of the outer surface of the bottom surface portion, and the bottom surface of the recess is parallel to the top surface of the base portion.

[3] In the semiconductor device of the present invention, it is preferable that the upper surface of the base portion is parallel to the inner surface of the bottom surface portion.

[4] In the semiconductor device of the present invention, the upper surface of the base portion has a planar shape, and the thickness of the end portion of the base portion on the first external terminal side is different from that on the first external terminal side. It is preferable that the thickness is smaller than the thickness of the end portion of the base portion on the opposite side.

[5] A method of manufacturing a semiconductor device according to the present invention is a method of manufacturing a semiconductor device according to any one of [1] to [4], and includes a bottom surface portion, a side surface portion, and an inner surface of the bottom surface portion. A convex base portion having an upper surface shape corresponding to the outer shape of one surface of the semiconductor chip, and the bottom surface portion, the side surface portion, and the base portion are integrally formed from the same metal member. A first disposing step of positioning and disposing the case and the semiconductor chip so that the base portion of the case formed on the case and one surface of the semiconductor chip face each other; and one end of the connector The semiconductor chip and the connector are positioned and arranged so that the semiconductor chip joint having a contour corresponding to the contour of the other surface of the semiconductor chip and the other surface of the semiconductor chip face each other. 2 arrangements And the resin inside the case so that the surface of the resin is in contact with the end of the case and the surface of the resin is flush with the end of the case or is concave on the bottom surface side. The resin filling step to be filled is the order of the first arranging step, the second arranging step, and the resin filling step, or the second arranging step, the first arranging step, and the resin filling step. In the second disposing step, the connector is disposed so that the other end of the connector is led out of the case, and the connector includes the semiconductor The chip bonding portion and the connecting portion are connected so as to have a structure bent to the opposite side of the surface for bonding to the semiconductor chip at the end of the semiconductor chip bonding portion, and the first arrangement In the installation step or the second arrangement step, the case A connection surface with the external circuit in the first external terminal portion formed by a part of the side surface portion, and a connection surface with the external circuit in the second external terminal portion located on the other end side of the connector The case, the semiconductor chip, and the connector are arranged so that they are on the same plane, and the base and the electrode formed on one surface of the semiconductor chip are electrically connected before the resin filling step. A first bonding step of bonding the base portion and one surface of the semiconductor chip via solder, and an electrode formed on the other surface of the semiconductor chip and the semiconductor chip bonding portion. The method further includes a second joining step of joining the other surface of the semiconductor chip and the connector via solder so as to be electrically connected.

[6] In the method of manufacturing a semiconductor device of the present invention, it is preferable that the first bonding step and the second bonding step are performed simultaneously.

  According to the semiconductor device of the present invention, since the bottom surface portion, the side surface portion, and the base portion are integrally formed from the same metal member, it is necessary to join the bottom surface portion and the base portion via solder. In addition, there is no possibility that the base portion will be displaced by being dragged by the flowing solder. Therefore, it is possible to accurately position the semiconductor chip with respect to the case, and the semiconductor device has high dimensional accuracy and high reliability.

  Further, according to the semiconductor device of the present invention, the bottom surface portion, the side surface portion, and the base portion are integrally formed from the same metal member, and therefore, the bottom surface portion and the base portion are joined via solder. There is no need, and a step of positioning the base portion, a step of joining the bottom surface portion and the base portion via solder, and the like become unnecessary. For this reason, the semiconductor device can be manufactured with high productivity without taking time, labor and equipment.

  In addition, according to the semiconductor device of the present invention, the bottom surface portion, the side surface portion, and the base portion are integrally formed from the same metal member. Therefore, compared to the conventional semiconductor device, the internal resistance of the case Can be reduced, and loss due to internal resistance can be reduced.

  Further, according to the semiconductor device of the present invention, since the case is provided with the resin filled in the case so that the surface is in contact with the end portion of the case, the semiconductor device is a semiconductor device in which the semiconductor chip and the semiconductor chip bonding portion are sufficiently protected. The semiconductor device is resistant to external impact.

  Further, according to the semiconductor device of the present invention, since the case is provided with the resin filled in the case so as to be flush with the end portion of the case or to have a concave shape on the bottom surface side, when filling the resin It is possible to prevent the resin from overflowing from the case and reaching the first external terminal portion formed on the side surface portion, or the resin creeping up the connecting portion of the connector and reaching the second external terminal portion. It becomes. For this reason, when mounting the semiconductor device on the external circuit, it is possible to prevent the connection with the external circuit from being poor due to the resin adhering to the first external terminal portion or the second external terminal portion. It becomes possible.

  Further, according to the semiconductor device of the present invention, since the outer shape of the upper surface of the base portion has an outer shape corresponding to the outer shape of one surface of the semiconductor chip, it is possible to increase the contact area between the base portion and the semiconductor chip. Become. As a result, heat generated from the semiconductor chip can be efficiently radiated to the case.

  Furthermore, according to the semiconductor device of the present invention, since the outer shape of the semiconductor chip joint portion of the connector has an outer shape corresponding to the outer shape of the other surface of the semiconductor chip, the contact area between the semiconductor chip and the connector is increased. It becomes possible to do. As a result, heat generated from the semiconductor chip can be efficiently radiated to the connector.

  According to the method for manufacturing a semiconductor device of the present invention, in the first disposing step, the bottom surface portion, the side surface portion, and the base portion are formed from the same metal member. There is no need to join the base part via solder, and there is no possibility that the base part will be displaced by being dragged by the flowing solder. Therefore, it is possible to accurately position the semiconductor chip with respect to the case, and it is possible to manufacture a highly reliable semiconductor device.

  Further, according to the method for manufacturing a semiconductor device of the present invention, in the first disposing step, the bottom surface, the side surface, and the base portion are formed from the same metal member, so that the bottom surface is used. There is no need to join the part and the base part via the solder, and the process of positioning the base part and the process of joining the bottom part and the base part via the solder become unnecessary. For this reason, it is possible to manufacture a semiconductor device with high productivity without taking time, labor and equipment.

  Moreover, since the manufacturing method of the semiconductor device of this invention is a manufacturing method of manufacturing the semiconductor device of this invention, it becomes possible to manufacture the semiconductor device which has the above-mentioned effect.

1 is a diagram for explaining a semiconductor device 1 according to a first embodiment. 4 is a flowchart shown for explaining the method for manufacturing the semiconductor device according to the first embodiment. FIG. 6 is a view for explaining the method for manufacturing the semiconductor device according to the first embodiment. 5 is a flowchart for explaining a method for manufacturing a semiconductor device according to a second embodiment. FIG. 6 is a view for explaining the method for manufacturing the semiconductor device according to the second embodiment. FIG. 6 is a diagram for explaining a semiconductor device 3 according to a third embodiment. FIG. 6 is a diagram for explaining a semiconductor device 4 according to a fourth embodiment. FIG. 6 is a diagram for explaining a semiconductor device 5 according to a fifth embodiment. It is a figure shown in order to demonstrate the conventional semiconductor device 900.

  Hereinafter, a semiconductor device and a method for manufacturing the semiconductor device of the present invention will be described based on embodiments shown in the drawings.

[Embodiment 1]
1. Configuration of Semiconductor Device 1 According to Embodiment 1 First, the configuration of the semiconductor device 1 according to Embodiment 1 will be described.
FIG. 1 is a diagram for explaining the semiconductor device 1 according to the first embodiment. 1A is a side sectional view of the semiconductor device 1, and FIG. 1B is a plan view of the semiconductor device 1 as viewed from an arrow A in FIG. In FIG. 1A, illustration of solder is omitted. Further, in FIG. 1B, illustration of the resin 40 is omitted.

  As shown in FIG. 1, the semiconductor device 1 according to the first embodiment includes a case 10, a semiconductor chip 20, a connector 30, and a resin 40.

  In the semiconductor device 1 according to the first embodiment, a first external terminal portion 14 to be described later and a second external terminal portion 32 to be described later configured by a part of the side surface portion 12 of the case 10 are external circuits (not shown). And surface-mounted so as to be electrically connected.

  The case 10 is a bowl-shaped case having an opening, and includes a bottom surface portion 11, a side surface portion 12 erected on the outer edge of the bottom surface portion 11, and a convex base formed at the center of the inner surface of the bottom surface portion 11. This is a conductive case having a portion 13. In the case 10, the joint portion and corners of the bottom surface portion 11, the side surface portion 12, and the base portion 13 are rounded. The material constituting the case is, for example, aluminum.

  In the case 10, the bottom surface portion 11, the side surface portion 12, and the base portion 13 are integrally formed from the same metal member. Specifically, the case 10 is formed by preparing one thick metal plate and leaving the region to be the base portion 13 and the region to be the side surface portion 12 so as to be recessed (stamping).

  The shape of the bottom surface portion 11 is a square shape, and the corners are rounded. The side surface portion 12 is connected so as to be bent in a direction perpendicular to the bottom surface portion 11. Further, the side surface portions 12 are also connected so as to be bent in a perpendicular direction. The thickness of the bottom face part 11 and the thickness of the side face part 12 are each 0.8 mm, for example.

  The upper surface of the base portion 13 is parallel to the inner surface of the bottom surface portion 11. That is, the shape of the base portion 13 is a rectangular parallelepiped shape that stands vertically from the inner surface of the bottom surface portion 11.

  The outer shape of the upper surface of the base portion 13 has an outer shape corresponding to the outer shape of one surface of the semiconductor chip 20 described later. Specifically, the outer shape of the upper surface of the base portion 13 is the same as the outer shape of one surface of the semiconductor chip 20 described later, and the size of the outer shape of the upper surface of the base portion 13 is the same as that of the semiconductor chip 20. On the other hand, it is slightly larger than the size of the outer shape of the surface 22. For this reason, a slight gap is formed between the outer shape of the semiconductor chip 20 and the outer shape of the base portion 13.

  The base portion 13 is formed at the center of the bottom surface portion 11. The length of one side of the outer shape of the base portion 13 is about 3/5 of the length from the inner surface of one side surface portion 12 to the inner surface of the opposite side surface portion 12. The thickness of the base part 13 is 0.8 mm, for example.

  The semiconductor chip 20 is disposed on the upper surface of the base portion 13 with one surface 22 joined to the upper surface of the base portion 13 via solder. Electrodes are respectively formed on one surface 22 and the other surface 24 of the semiconductor chip 20. An electrode (not shown) formed on the one surface 22 and the base portion 13 are electrically connected via solder. The outer shape of one surface 22 and the outer surface of the other surface 24 of the semiconductor chip 20 are each square.

  The connector 30 has one end joined to the other surface 24 of the semiconductor chip 20 via solder, and the other end is led out of the case 10 on the other surface 24 of the semiconductor chip 20. It is arranged.

  The connector 30 is located on one end side and is connected to the other surface 24 of the semiconductor chip 20 via solder, and the connector 30 is located on the other end side and is connected to an external circuit. It has the 2nd external terminal part 32 and the connection part 33 pinched | interposed between the semiconductor chip junction part 31 and the 2nd external terminal part 32. FIG.

  The semiconductor chip bonding portion 31 has a flat plate shape, and the outer shape of the semiconductor chip bonding portion 31 has an outer shape corresponding to the outer shape of the other surface 24 of the semiconductor chip 20. Specifically, the outer shape of the semiconductor chip bonding portion 31 is the same as the outer shape (square) of the other surface of the semiconductor chip 20, and the outer size of the semiconductor chip bonding portion 31 is the same as that of the semiconductor chip 20. Slightly smaller than the size of the other side. For this reason, a slight gap is formed between the outer shape of the semiconductor chip and the outer shape of the semiconductor chip bonding portion 31.

  An electrode (not shown) formed on the other surface 24 of the semiconductor chip 20 and the semiconductor chip joint 31 are electrically connected via solder.

  The second external terminal portion 32 has a flat plate shape, and the external shape of the second external terminal portion 32 is a rectangle. The second external terminal portion 32 is located away from the side surface portion 12 of the case 10, and the connection surface 15 of the first external terminal portion 14 to the external circuit and the connection surface of the second external terminal portion 32 to the external circuit. 34 is on the same plane.

  The connecting portion 33 is a plate-like member that connects the semiconductor chip joining portion 31 and the second external terminal portion 32. In the connector 30, the semiconductor chip bonding portion 31 and the connecting portion 33 are connected so as to be bent at the end of the semiconductor chip bonding portion 31 on the side opposite to the bonding surface with the semiconductor chip 20. . Further, in the connector 30, the second external terminal portion 32 and the connecting portion 33 are connected so as to have a structure bent to the inside of the case 10 at the end portion of the second external terminal portion 32. In addition, the connecting portion 33 has a structure that is bent substantially vertically in the middle from the semiconductor chip joint portion 31 to the second external terminal portion 32.

  The resin 40 is made of polyimide or polyether amide, and protects the semiconductor chip 20 from external impact. The resin 40 is filled in the case 10 so that the surface is in contact with the end portion of the case 10 and the surface is concave toward the bottom surface portion 11 side.

2. Semiconductor Device Manufacturing Method According to Embodiment 1 Next, a semiconductor device manufacturing method according to Embodiment 1 will be described.
FIG. 2 is a flowchart for explaining the method for manufacturing the semiconductor device according to the first embodiment.
FIG. 3 is a view for explaining the method for manufacturing the semiconductor device according to the first embodiment. FIG. 3A to FIG. 3F are process diagrams. In FIG. 3, unlike FIG. 1, the bottom surface portion 11 is illustrated below.

  As shown in FIG. 2, the semiconductor device manufacturing method according to the first embodiment includes a “case preparation step S1”, a “semiconductor chip placement step (first placement step) S2”, and a “connector placement step”. (Second Arrangement Step) S3 ”,“ Reflow Step S4 ”, and“ Resin Filling Step S5 ”are included in this order.

(1) Case preparation process S1
First, as shown in FIG. 3A, a bowl-shaped case 10 having an opening 18 is prepared. The case 10 includes a bottom surface portion 11, a side surface portion 12, and a convex base portion 13 that is formed at the center of the inner surface of the bottom surface portion 11 and has an upper surface outer shape corresponding to the outer shape of the one surface 22 of the semiconductor chip 20. And the bottom face part 11, the side part 12, and the base part 13 are integrally formed from the same metal member. The upper surface of the base portion 13 is planar and is parallel to the inner surface of the bottom surface portion 11. A part of the side surface portion 12 of the case 10 constitutes a first external terminal portion 14 for connection to an external circuit.

(2) Semiconductor chip placement step (first placement step) S2
Next, solder is disposed on the upper surface of the base portion 13. Specifically, first, flux (not shown) is applied to the upper surface of the base portion 13 to remove the metal oxide on the surface of the base portion 13. At this time, since the base portion 13 has a convex shape, and the upper surface of the base portion 13 is planar and parallel to the inner surface of the bottom surface portion 11, the flux is in a region other than the upper surface of the base portion 13. It can be prevented from flowing out.

  Next, as shown in FIG. 3B, paste-like solder H1 is mounted on the upper surface of the base portion 13 to which the flux has been applied. The solder H1 has a thickness of about 0.05 mm to 0.1 mm. Next, a flux (not shown) is applied again on the solder H1. Next, a positioning jig (carbon jig) C is installed. In addition, if the timing which installs the positioning jig (carbon jig | tool) C is before arrange | positioning the semiconductor chip 20, it can implement at an appropriate timing.

  Next, as shown in FIG. 3C, the case 10 and the semiconductor chip 20 are positioned so that the base portion 13 of the case 10 and the one surface 22 of the semiconductor chip 20 face each other, and the semiconductor chip 20 is disposed. To do. Specifically, the semiconductor chip 20 is positioned on the upper surface of the base portion 13 using a positioning jig (carbon jig) C while positioning according to the outer shape of the base portion 13 so as not to protrude from the upper surface of the base portion 13. A semiconductor chip 20 is disposed.

(3) Connector placement step (second placement step) S3
Next, solder is disposed on the other surface 24 of the semiconductor chip 20. Specifically, first, flux (not shown) is applied on the other surface 24 of the semiconductor chip 20 to remove the metal oxide on the other surface 24. Next, as shown in FIG. 3D, paste-like solder H2 is mounted on the upper surface of the base portion 13 to which the flux has been applied. The solder H2 has a thickness of about 0.05 mm to 0.1 mm. Next, a flux (not shown) is applied again on the solder H2.

  Next, as shown in FIG. 3E, the semiconductor chip 20 is arranged so that the other surface 24 of the semiconductor chip 20 and the semiconductor chip bonding portion 31 having an outer shape corresponding to the outer shape of the other surface 24 of the semiconductor chip 20 face each other. The connector 30 is disposed by positioning the connector 20 and the connector 30. Specifically, the semiconductor chip bonding portion 31 formed at one end of the connector 30 is adjusted to the outer shape of the other surface 24 of the semiconductor chip 20 so that it does not protrude from the upper surface of the other surface 24 of the semiconductor chip 20. The semiconductor chip 20 is disposed on the other surface 24 of the semiconductor chip 20 using a positioning jig (carbon jig) C.

  At this time, the connector 30 is disposed so that the other end faces the other surface of the semiconductor chip 20 via the solder H2 in a state where the other end is led out of the case 10. Further, the connection surface 15 with the external circuit in the first external terminal portion 14 formed by a part of the side surface portion 12 of the case 10 and the connection surface 34 with the external circuit in the second external terminal portion 32 of the connector 30. The case 10, the semiconductor chip 20, and the connector 30 are arranged so that they are on the same plane.

  In this way, a structure including the case 10, the semiconductor chip 20, and the connector 30 is formed.

(4) Reflow process S4
Next, the structure formed in the second disposing step S3 is taken out from the positioning jig (carbon jig) C and placed in a reflow furnace to melt the solder. As a result, the step of bonding the semiconductor chip 20 to the upper surface of the base portion 13 via the solder so as to electrically connect the electrode formed on the one surface 22 of the semiconductor chip 20 and the base portion 13 (first bonding) Step) and a step of bonding the connector 30 to the other surface of the semiconductor chip 20 via solder so as to electrically connect the electrode formed on the other surface 24 of the semiconductor chip 20 and the semiconductor chip bonding portion 31 (step). The second joining step) is performed at the same time.

In the reflow step S4, the furnace temperature in the reflow furnace is, for example, 350 ° C. A heated inert gas (N ₂ gas) may be introduced into the reflow furnace. As the inert gas, N ₂ gas, Ar gas, or the like can be used.

(5) Resin filling step S5
Next, as shown in FIG. 3 (f), the surface of the resin 40 is in contact with the end of the case 10 with respect to the structure taken out from the reflow furnace, and the surface of the resin 40 is the bottom surface of the case 10. The inside of the case 10 is filled with a resin so as to have a concave shape on the 11 side.

  In this way, the semiconductor device 1 can be manufactured.

3. Effects of Semiconductor Device and Semiconductor Device Manufacturing Method According to Embodiment 1

  According to the semiconductor device 1 according to the first embodiment, the bottom surface portion 11, the side surface portion 12, and the base portion 13 are integrally formed from the same metal member. There is no need to join via solder, and there is no possibility that the base portion 13 will be displaced by being dragged by the flowing solder. Therefore, it is possible to accurately position the semiconductor chip 20 with respect to the case 10, and as a result, the semiconductor device has high dimensional accuracy and high reliability.

  Further, according to the semiconductor device 1 according to the first embodiment, the bottom surface portion 11, the side surface portion 12, and the base portion 13 are integrally formed from the same metal member. And the step of positioning the base portion 13, the step of joining the bottom surface portion 11 and the base portion 13 via the solder, and the like become unnecessary. For this reason, the semiconductor device can be manufactured with high productivity without taking time, labor and equipment.

  Further, according to the semiconductor device 1 according to the first embodiment, the bottom surface portion 11, the side surface portion 12, and the base portion 13 are integrally formed from the same metal member, and therefore, compared with a conventional semiconductor device. Thus, the internal resistance of the case 10 can be lowered, and loss due to the internal resistance can be reduced.

  Further, according to the semiconductor device 1 according to the first embodiment, the semiconductor chip 20 and the semiconductor chip bonding portion 31 are provided with the resin 40 filled in the case 10 so that the surface contacts the end of the case 10. The semiconductor device is sufficiently protected, and the semiconductor device is resistant to external impact.

  In addition, according to the semiconductor device 1 according to the first embodiment, the resin 40 is filled in the case 10 so as to have a concave shape on the bottom surface portion 11 side of the case 10. The resin overflows from the case 10 and reaches the first external terminal portion 14 formed on the side surface portion 12, and prevents the resin from scooping up the connecting portion 33 and reaching the second external terminal portion 32. Is possible. For this reason, when the semiconductor device is mounted on the external circuit, the connection with the external circuit is prevented from being poor due to the resin adhering to the first external terminal portion 14 or the second external terminal portion 32. It becomes possible.

  In addition, according to the semiconductor device 1 according to the first embodiment, since the outer shape of the upper surface of the base portion 13 has an outer shape corresponding to the outer shape of one surface of the semiconductor chip 20, the contact between the base portion 13 and the semiconductor chip 20. The area can be increased. As a result, the heat generated from the semiconductor chip 20 can be efficiently radiated to the case 10.

  Furthermore, according to the semiconductor device 1 according to the first embodiment, the outer shape of the semiconductor chip joint portion 31 of the connector 30 has an outer shape corresponding to the outer shape of the other surface 24 of the semiconductor chip 20. The contact area with the connector 30 can be increased. As a result, the heat generated from the semiconductor chip 20 can be efficiently radiated to the connector 30.

  Further, according to the semiconductor device 1 according to the first embodiment, since the upper surface of the base portion 13 is parallel to the inner surface of the bottom surface portion 11, the upper surface of the base portion 13 and the semiconductor chip 20 are joined via solder. Therefore, when the solder disposed on the upper surface of the base portion 13 is melted, the melted solder tends to stay on the upper surface of the base portion 13. For this reason, it is possible to accurately position the semiconductor chip 20 with respect to the case 10, and as a result, the semiconductor device has high dimensional accuracy and high reliability.

  According to the method for manufacturing a semiconductor device according to the first embodiment, in the first arrangement step S2, the case 10 in which the bottom surface portion 11, the side surface portion 12, and the base portion 13 are integrally formed from the same metal member. Therefore, there is no need to join the bottom surface portion 11 and the base portion 13 via solder, and there is no need for a step of positioning the base portion 13 or a step of joining the bottom surface portion 11 and the base portion 13 via solder. Become. For this reason, it is possible to manufacture a semiconductor device with high productivity without taking time, labor and equipment.

  Moreover, according to the manufacturing method of the semiconductor device according to the first embodiment, in the first arrangement step S2, the bottom surface portion 11, the side surface portion 12, and the base portion 13 are integrally formed from the same metal member. Since the case 10 is used, there is no need to join the bottom surface portion 11 and the base portion 13 via solder, and there are a step of positioning the base portion 13 and a step of joining the bottom surface portion 11 and the base portion 13 via solder. It becomes unnecessary. For this reason, it is possible to manufacture a semiconductor device with high productivity without taking time, labor and equipment.

  In addition, according to the method for manufacturing a semiconductor device according to the first embodiment, since the first bonding step and the second bonding step are performed simultaneously, the time, labor, and equipment are not required, and the semiconductor device is highly productive. Can be manufactured.

[Embodiment 2]
FIG. 4 is a flowchart for explaining the method for manufacturing the semiconductor device according to the second embodiment.
FIG. 5 is a view for explaining the method for manufacturing the semiconductor device according to the second embodiment. FIG. 5A to FIG. 5F are process diagrams.

  The manufacturing method of the semiconductor device according to the second embodiment basically includes the same steps as the manufacturing method of the semiconductor device according to the first embodiment, but the order of the first arrangement step and the second arrangement step is reversed. This is different from the semiconductor device manufacturing method according to the first embodiment. That is, in the method of manufacturing a semiconductor device according to the second embodiment, as shown in FIG. 4, “connector installation step S11”, “semiconductor chip arrangement step (second arrangement step) S12”, “case arrangement” The installation step (first arrangement step) S13 ", the" reflow step S14 ", and the" resin filling step S15 "are included in this order.

(A) Connector installation process S11
First, as shown in FIG. 5A, the other end side (second external terminal portion 32 side) of the connector 30 is on the lower side, and the bonding surface of the semiconductor chip bonding portion 31 with the semiconductor chip 20 is on the upper side. It installs in the positioning jig (carbon jig) C as follows. At this time, the semiconductor chip bonding portion 31 is installed so as to be horizontal on the pedestal portion B of the positioning jig.
The semiconductor chip bonding portion 31 is located on one end side of the connector 30 and has an outer shape corresponding to the outer shape of the other surface 24 of the semiconductor chip 20. In the connector 30, the semiconductor chip bonding portion 31 and the connecting portion 33 are bent to the opposite side of the surface for bonding to the semiconductor chip 20 at the end of the semiconductor chip bonding portion 31. It is connected to.

(B) Semiconductor chip placement step (second placement step) S12
Next, a flux (not shown) is applied to the bonding surface of the semiconductor chip bonding portion 31 with the semiconductor chip 20, and then paste solder H1 is mounted as shown in FIG. 5B. The solder H1 has a thickness of about 0.05 mm to 0.1 mm. Next, a flux (not shown) is applied again on the solder H1.

  Next, as shown in FIG. 5C, the semiconductor chip 20 and the connector 30 are positioned so that the semiconductor chip bonding portion 31 and the other surface 24 of the semiconductor chip 20 face each other, and the semiconductor chip 20 is made into a semiconductor. It is disposed on the chip joint 31.

(C) Case disposing step (first disposing step) S13
Next, a flux (not shown) is applied to one surface 22 of the semiconductor chip 20, and then a paste-like solder H2 is mounted as shown in FIG. 5 (d). The solder H2 has a thickness of about 0.05 mm to 0.1 mm. Next, a flux (not shown) is applied again on the solder H2.

  Next, as shown in FIG. 5E, the case 10 and the semiconductor chip 20 are positioned so that the base portion 13 of the case 10 and the one surface 22 of the semiconductor chip 20 face each other, and the case 10 is covered. Arrange. At this time, the other end of the connector 30 is led out of the case 10. Further, the connection surface 15 of the first external terminal portion 14 formed by a part of the side surface portion 12 of the case 10 with the external circuit and the second external terminal portion 32 located on the other end side of the connector 30. The case 10, the semiconductor chip 20, and the connector 30 are arranged so that the connection surface 34 with the external circuit in FIG.

  In this way, a structure including the case 10, the semiconductor chip 20, and the connector 30 is formed.

  Next, a reflow process S14 and a resin filling process S15 (see FIG. 5F) are performed. Since the reflow step S14 is the same as the reflow step S4 in the first embodiment and the resin filling step S15 is the same as the resin filling step S5 in the first embodiment, description thereof is omitted.

  Thus, the semiconductor device manufacturing method according to the second embodiment is different from the semiconductor device manufacturing method according to the first embodiment in that the order of the first arrangement step and the second arrangement step is reversed. Although different, as in the case of the semiconductor device manufacturing method according to the first embodiment, in the case disposing step (first disposing step) S13, the bottom surface portion 11, the side surface portion 12, and the base portion 13 are made of the same metal member. Since the integrally formed case 10 is used, it is not necessary to join the bottom surface portion 11 and the base portion 13 via solder, and there is no possibility that the base portion 13 is displaced by being dragged by the flowing solder. Therefore, the position of the semiconductor chip 20 with respect to the case 10 can be accurately positioned, and a highly reliable semiconductor device can be manufactured.

  Further, according to the method of manufacturing a semiconductor device according to the second embodiment, in the case disposing step (first disposing step) S13, the bottom surface portion 11, the side surface portion 12, and the base portion 13 are integrally formed from the same metal member. Since the formed case 10 is used, there is no need to join the bottom surface portion 11 and the base portion 13 via solder, and the step of positioning the base portion 13 and the bottom surface portion 11 and the base portion 13 are joined via solder. The process to do becomes unnecessary. For this reason, it is possible to manufacture a semiconductor device with high productivity without taking time, labor and equipment.

  Further, according to the method for manufacturing a semiconductor device according to the second embodiment, since the case 10 is disposed so as to be covered, the bottom surface portion 11 is disposed on the solder, and is melted in the reflow step S14. It is possible to prevent the solder that has flowed out from flowing to the inner surface of the bottom surface portion 11. For this reason, it becomes possible to prevent the base part 13 from being displaced by being dragged by the flowing solder.

  The semiconductor device manufacturing method according to the second embodiment is the same as the semiconductor device manufacturing method according to the first embodiment except that the order of the first arrangement step and the second arrangement step is reversed. Therefore, the semiconductor device manufacturing method according to the first embodiment has a corresponding effect.

[Embodiment 3]
FIG. 6 is a diagram for explaining the semiconductor device 3 according to the third embodiment. 6A is a side sectional view of the semiconductor device 3, and FIG. 6B is a plan view of the semiconductor device 3 as viewed from the arrow A in FIG. In addition, illustration of solder is abbreviate | omitted in Fig.6 (a). Moreover, illustration of the resin 40 is abbreviate | omitted in FIG.6 (b).

  The semiconductor device 3 according to the third embodiment basically has the same configuration as the semiconductor device 1 according to the first embodiment, but the semiconductor device according to the first embodiment is that a recess is provided in the bottom surface portion of the case. This is different from the case of 1. That is, in the semiconductor device 3 according to the third embodiment, as shown in FIG. 6, the recess 16a is provided at the center of the outer surface of the bottom surface portion 11a.

  In the recess 16a, the bottom of the recess 16a is a flat surface, and the bottom surface of the recess 16a is parallel to the upper surface of the base portion 13a. The outer shape of the bottom surface of the recess 16a has an outer shape corresponding to the upper surface of the base portion 13a. Specifically, the outer shape of the bottom surface of the recess 16a is the same as the outer shape of the upper surface of the base portion 13a, and the outer shape of the recess 16a is slightly larger than the outer shape of the upper surface of the base portion 13a. It is getting smaller. The thickness between the bottom surface of the recess 16a and the top surface of the base portion 13a is, for example, 0.8 mm.

  As described above, the semiconductor device 3 according to the third embodiment is different from the semiconductor device 1 according to the first embodiment in that the recess is provided in the bottom surface portion of the case, but the semiconductor device 1 according to the first embodiment. As in the case of FIG. 5, since the bottom surface portion 11a, the side surface portion 12a, and the base portion 13a are integrally formed from the same metal member, the bottom surface portion 11a and the base portion 13a are joined via solder. There is no need, and there is no possibility that the base portion 13a is displaced by being dragged by the flowing solder. Therefore, it is possible to accurately position the semiconductor chip 20 with respect to the case 10a. As a result, the semiconductor device has high dimensional accuracy and high reliability.

  Further, according to the semiconductor device 3 according to the third embodiment, since the concave portion 16a is provided in the center of the outer surface of the bottom surface portion 11a, the area of the outer surface of the case 10a is increased and generated from the semiconductor chip 20. Heat can be efficiently radiated from the case 10a to the outside.

  Further, according to the semiconductor device 3 according to the third embodiment, since the recess 16a is provided at the center of the outer surface of the bottom surface portion 11a, the distance between the semiconductor chip 20 that generates heat and the outside of the case 10a is shortened. This also makes it possible to efficiently dissipate the heat generated from the semiconductor chip 20 from the case 10a to the outside.

  Further, according to the semiconductor device 3 according to the third embodiment, since the bottom surface of the recess 16a is parallel to the upper surface of the base portion 13a, the recess is formed from one surface of the semiconductor chip 20 disposed on the upper surface of the base portion 13a. Since it is difficult for the distance to the bottom surface of 16a to produce a difference and heat can be prevented from concentrating locally, the heat generated from the semiconductor chip 20 can be radiated to the outside more efficiently. .

  The semiconductor device 3 according to the third embodiment has the same configuration as that of the semiconductor device 1 according to the first embodiment except that a recess is provided in the bottom surface portion of the case. The semiconductor device 1 has a corresponding effect among the effects of the semiconductor device 1.

[Embodiment 4]
FIG. 7 is a diagram for explaining the semiconductor device 4 according to the fourth embodiment. FIG. 7A is a side sectional view of the semiconductor device 4, and FIG. 7B is a plan view of the semiconductor device 4 as viewed from the arrow A in FIG. In addition, illustration of solder is abbreviate | omitted in Fig.7 (a). Also, the resin 40 is not shown in FIG.

  The semiconductor device 4 according to the fourth embodiment basically has the same configuration as the semiconductor device 1 according to the first embodiment, but the configuration of the base portion is different from that of the semiconductor device 1 according to the first embodiment. That is, in the semiconductor device 4 according to the fourth embodiment, as shown in FIG. 7, in the base portion 13b, the upper surface of the base portion 13b has a planar shape, and the base portion 13b on the first external terminal portion 14 side. The thickness of the end portion of the base portion 13b is thinner than the end portion of the base portion 13b on the side opposite to the first external terminal portion 14 side (that is, the upper surface of the base portion 13b is on the inner surface of the bottom surface portion 11 of the case 10b). The configuration is slanted.

  The connector 30b basically has the same configuration as that of the connector 30 in the first embodiment, but in the connector 30b, the semiconductor chip bonding portion 31b and the connecting portion 33b are a base for the inner surface of the bottom surface portion 11b. The ends of the semiconductor chip bonding portion 31b are connected to be bent toward the opening of the case 10b at an angle corresponding to the inclination of the upper surface of the portion 13b.

  As described above, the semiconductor device 4 according to the fourth embodiment differs from the semiconductor device 1 according to the first embodiment in the configuration of the base portion, but the bottom surface portion as in the case of the semiconductor device 1 according to the first embodiment. 11b, the side surface portion 12b, and the base portion 13b are integrally formed from the same metal member, so there is no need to join the bottom surface portion 11b and the base portion 13b via solder, and the molten solder There is no possibility that the base portion 13b is displaced due to the drag. Accordingly, it is possible to accurately position the semiconductor chip 20b with respect to the case 10b, and as a result, a highly reliable semiconductor device is obtained.

  Further, according to the semiconductor device 4 according to the fourth embodiment, the base portion 13b has a flat top surface of the base portion 13b and the thickness of the end portion of the base portion 13b on the first external terminal portion 14b side. Is less than the thickness of the end portion of the base portion 13b opposite to the first external terminal portion 14b side, so that the position of the center of gravity of the case 10b is constant when the thickness of the base portion is constant. Compared to the position of the opening of the case 10b. For this reason, it is possible to prevent the weight balance of the case 10b from being inclined toward the bottom surface portion 11b, and it is possible to prevent the second external terminal portion 32b of the connector 30b from being separated from the external circuit. As a result, it is possible to prevent contact failure between the semiconductor device and the external circuit.

  The semiconductor device 4 according to the fourth embodiment has the same configuration as that of the semiconductor device 1 according to the first embodiment except for the configuration of the case. Has the effect of

[Embodiment 5]
FIG. 8 is a diagram for explaining the semiconductor device 5 according to the fifth embodiment. FIG. 8A is a side sectional view of the semiconductor device 5, and FIG. 8B is a plan view of the semiconductor device 5 as viewed from the arrow A in FIG. In addition, illustration of solder is abbreviate | omitted in Fig.8 (a). Also, the resin 40 is not shown in FIG.

  The semiconductor device 5 according to the fifth embodiment basically has the same configuration as that of the semiconductor device 4 according to the fourth embodiment, but the semiconductor device according to the fourth embodiment is that a recess is provided in the bottom surface portion of the case. This is different from the case of 4. That is, in the semiconductor device 5 according to the fifth embodiment, as shown in FIG. 8, the recess 16c is provided at the center of the outer surface of the bottom surface portion 11c.

  In the recess 16c, the bottom of the recess 16c is a flat surface, and the bottom surface of the recess 16c is parallel to the upper surface of the base portion 13c. The outer shape of the bottom surface of the recess 16c has an outer shape corresponding to the upper surface of the base portion 13c, and the size of the bottom surface of the recess 16c is slightly smaller than the upper surface of the base portion 13c. The thickness between the bottom surface of the recess 16c and the top surface of the base portion 13c is, for example, 0.8 mm.

  As described above, the semiconductor device 5 according to the fifth embodiment differs from the semiconductor device 4 according to the fourth embodiment in that a recess is provided in the bottom surface portion of the case, but the semiconductor device 4 according to the fourth embodiment. Similarly to the case, the bottom surface portion 11c, the side surface portion 12c, and the base portion 13c are integrally formed from the same metal member, and therefore, the bottom surface portion 11c and the base portion 13c are joined via solder. There is no need, and there is no possibility that the base portion 13c is displaced by being dragged by the flowing solder. Accordingly, it is possible to accurately position the semiconductor chip 20 with respect to the case 10c, and as a result, the semiconductor device has high dimensional accuracy and high reliability.

  In addition, according to the semiconductor device 5 according to the fifth embodiment, since the recess 16c is provided at the center of the outer surface of the bottom surface portion 11c, the area of the outer surface of the case 10c increases and is generated from the semiconductor chip 20. Heat can be efficiently radiated from the case 10c to the outside.

  Further, according to the semiconductor device 5 according to the fifth embodiment, since the recess 16c is provided at the center of the outer surface of the bottom surface portion 11c, the distance between the semiconductor chip 20 that generates heat and the outside of the case 10c is shortened. This also makes it possible to efficiently dissipate the heat generated from the semiconductor chip 20 from the case 10a to the outside.

  Further, according to the semiconductor device 5 according to the fifth embodiment, since the bottom surface of the recess 16c is parallel to the top surface of the base portion 13c, the one surface 22 of the semiconductor chip 20 disposed on the top surface of the base portion 13c. It is difficult to make a difference in the distance from the bottom surface of the recess 16c to the bottom surface of the recess 16c, and heat can be prevented from concentrating locally. Therefore, heat generated from the semiconductor chip 20 can be efficiently radiated to the outside. .

  The semiconductor device 5 according to the fifth embodiment has the same configuration as that of the semiconductor device 4 according to the fourth embodiment except that the recess is provided in the bottom surface portion of the case. The semiconductor device 4 has a corresponding effect among the effects of the semiconductor device 4.

  As mentioned above, although this invention was demonstrated based on said embodiment, this invention is not limited to said embodiment. The present invention can be implemented in various modes without departing from the spirit thereof, and for example, the following modifications are possible.

(1) In each of the embodiments described above, the present invention has been described by taking the case where the case is formed by punching as an example, but the present invention is not limited to this. For example, the present invention can be applied even when the case is formed by drawing.

(2) In each of the above embodiments, the present invention has been described by way of an example in which the first bonding step and the second bonding step are performed simultaneously, but the present invention is not limited to this. The present invention is applicable even when the first joining step and the second joining step are performed separately.

(3) In each of the above embodiments, the present invention has been described by taking as an example the case where resin is filled in the case so that the surface of the connector has a concave shape on the bottom surface side. It is not limited. For example, the present invention is applicable even when the case is filled with resin with the surface of the connector being flush with the end of the case.

(4) In each of the above embodiments, the present invention has been described by taking the case where the shape of the bottom surface portion is a square shape as an example, but the present invention is not limited to this. The present invention can be applied even when the shape of the bottom surface portion is a quadrilateral shape other than the square shape, a polygonal shape other than the square shape, or other shapes.

(5) In each of the above embodiments, the present invention has been described by taking as an example the case where the shape of the bottom surface portion is rounded at the corners, but the present invention is not limited to this. The present invention can be applied even when the shape of the bottom surface portion is not rounded at the corners.

(6) In each of the above-described embodiments, the present invention has been described taking the case where an inert gas is introduced in the reflow process as an example, but the present invention is not limited to this. The present invention can be applied even when an inert gas is not introduced in the reflow process.

  1, 2, 3, 4, 900... Semiconductor device 10, 10a, 10b, 10c, 910... Case, 11, 11a, 11b, 11c, 911... Bottom portion, 12, 12a, 12b, 12c, 912. , 13, 13a, 13b, 13c, 913... Base portion, 14, 14a, 14b, 14c, 914... First external terminal portion, 15, 15a, 15b, 15c, 915... (On the first external terminal portion) connection surface 16, 16 c, 916... Recess, 18 .. opening, 20, 920... Semiconductor chip, 22 922... (On the semiconductor chip) one side, 24 924. , 930... Connector, 31, 31 b, 31 c, 931... Semiconductor chip junction, 32, 32 b, 32 c, 932... Second external terminal part, 33, 33 b, 33 c, 933. , 34b, 34c, 934 ... (second external terminal portions) connecting surface, 40,940 ... resin

Claims (5)

An eaves-like case having an opening, having a bottom surface, a side surface erected on the outer edge of the bottom surface, and a convex base formed at the center of the inner surface of the bottom surface Case and
A semiconductor chip disposed on the upper surface of the base portion in a state where one surface is bonded to the upper surface of the base portion via solder;
A connector disposed on the other surface of the semiconductor chip, with one end joined to the other surface of the semiconductor chip via solder and the other end led out of the case; ,
The surface is in contact with the end of the case, and the resin filled in the case so as to be flush with the end of the case or concave on the bottom surface side, and
A part of the side surface portion of the case constitutes a first external terminal portion for connection to an external circuit,
The connector is located on one end side and is joined to the other surface of the semiconductor chip via solder, and the second end is located on the other end side and is connected to an external circuit. An external terminal part, and a connecting part sandwiched between the semiconductor chip joint part and the second external terminal part,
The semiconductor chip bonding portion and the connecting portion are connected so as to be bent at the end of the semiconductor chip bonding portion on the side opposite to the bonding surface with the semiconductor chip,
Electrodes are respectively formed on the one surface and the other surface of the semiconductor chip, and the electrode formed on the one surface of the semiconductor chip and the base portion are electrically connected via solder, and The electrode formed on the other surface of the semiconductor chip and the semiconductor chip joint are electrically connected via solder,
The connection surface with the external circuit in the first external terminal portion and the connection surface with the external circuit in the second external terminal portion are on the same plane,
The outer shape of the upper surface of the base portion has an outer shape corresponding to the outer shape of one surface of the semiconductor chip,
A semiconductor device having an outer shape corresponding to an outer shape of the other surface of the semiconductor chip,
The upper surface of the base portion has a planar shape,
The thickness of the end portion of the base portion on the first external terminal portion side is thinner than the thickness of the end portion of the base portion on the side opposite to the first external terminal portion side,
The bottom surface portion, the side surface portion, and the base portion are integrally formed from the same metal member. The semiconductor device according to claim 1,
A recess is provided in the center of the outer surface of the bottom surface,
The semiconductor device according to claim 1, wherein a bottom surface of the recess is parallel to an upper surface of the base portion. The semiconductor device according to claim 1 or 2,
The semiconductor device according to claim 1, wherein an upper surface of the base portion is parallel to an inner surface of the bottom surface portion. A method of manufacturing a semiconductor device for manufacturing a semiconductor device according to any one of claims 1 to 3
A bottom surface portion, a side surface portion, and a convex base portion formed at the center of the inner surface of the bottom surface portion and having a top surface corresponding to the outer shape of one surface of the semiconductor chip; and the bottom surface portion and the side surface portion And the case and the semiconductor chip are positioned and arranged so that the base part in the case in which the base part is integrally formed from the same metal member and one surface of the semiconductor chip face each other. An arrangement process;
The semiconductor chip and the connector are arranged so that a semiconductor chip bonding portion located on one end side of the connector and having an outer shape corresponding to the outer shape of the other surface of the semiconductor chip faces the other surface of the semiconductor chip. A second disposing step of positioning and disposing;
Resin that fills the inside of the case such that the surface of the resin is in contact with the end of the case and the surface of the resin is flush with the end of the case or is concave on the bottom side A filling step in the order of the first placement step, the second placement step, and the resin filling step, or the order of the second placement step, the first placement step, and the resin filling step. ,
In the second arrangement step, the connector is arranged so that the other end of the connector is led out of the case,
The connector is connected so that the semiconductor chip bonding portion and the connecting portion are bent to the side opposite to the surface for bonding to the semiconductor chip at the end of the semiconductor chip bonding portion. And
In the first disposing step or the second disposing step, a connection surface with an external circuit in the first external terminal portion formed by a part of the side surface portion of the case, and the other of the connectors The case, the semiconductor chip and the connector are arranged so that the connection surface with the external circuit in the second external terminal portion located on the end side is on the same plane,
In the first arrangement step, the upper surface of the base portion has a planar shape, and the thickness of the end portion of the base portion on the first external terminal portion side is opposite to that on the first external terminal portion side. It is thinner than the thickness of the end of the base part on the side,
Before the resin filling step,
A first joining step for joining the base portion and one surface of the semiconductor chip via solder so as to electrically connect the base portion and an electrode formed on one surface of the semiconductor chip;
A second bonding step of bonding the other surface of the semiconductor chip and the connector via solder so as to electrically connect the electrode formed on the other surface of the semiconductor chip and the semiconductor chip bonding portion; A method for manufacturing a semiconductor device, further comprising: In the manufacturing method of the semiconductor device according to claim 4 ,
A method of manufacturing a semiconductor device, wherein the first bonding step and the second bonding step are performed simultaneously.