JP6029914B2 - 電磁波増幅装置 - Google Patents
電磁波増幅装置 Download PDFInfo
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- JP6029914B2 JP6029914B2 JP2012211215A JP2012211215A JP6029914B2 JP 6029914 B2 JP6029914 B2 JP 6029914B2 JP 2012211215 A JP2012211215 A JP 2012211215A JP 2012211215 A JP2012211215 A JP 2012211215A JP 6029914 B2 JP6029914 B2 JP 6029914B2
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- electromagnetic wave
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Description
1a・・・・・・入力端
1b・・・・・・出力端
2、3・・・・・電極
4・・・・・・・コア
5・・・・・・・クラッド層
6・・・・・・・分離装置
7・・・・・・・外部出力端
8〜10・・・・鏡装置
11・・・・・・フィルター装置
Claims (1)
- 内部に印加電界により走行する自由電子流を有する半導体を、その自由電子流の走行方向を伝送方向とする誘電体導波装置中に収容すると共に、前記導波装置の内部を伝搬する電磁波をTMモードとして、前記電磁波の周波数を前記自由電子のプラズマ周波数よりも高くかつ前記導波装置のTEモードでの公称遮断周波数よりも低く選定し、前記自由電子流と前記電磁波とを前記導波装置内で同一方向に走行させることにより、数2の方程式の共役複素解に従って増幅された電磁波の出力を得ることを特徴とする電磁波増幅装置。
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JP2012211215A JP6029914B2 (ja) | 2012-09-25 | 2012-09-25 | 電磁波増幅装置 |
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JP2012211215A JP6029914B2 (ja) | 2012-09-25 | 2012-09-25 | 電磁波増幅装置 |
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JP2014067825A JP2014067825A (ja) | 2014-04-17 |
JP6029914B2 true JP6029914B2 (ja) | 2016-11-24 |
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Families Citing this family (1)
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CN112820608B (zh) * | 2021-01-29 | 2022-04-08 | 中国人民解放军国防科技大学 | 一种基于超材料的低频段慢波结构 |
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JP2001091914A (ja) * | 1999-09-22 | 2001-04-06 | Hamamatsu Photonics Kk | 電磁波導波体の構造と、これを利用する電磁波装置 |
JP4246338B2 (ja) * | 1999-11-25 | 2009-04-02 | 浜松ホトニクス株式会社 | 半導体光導波路の構造とこれを利用した光増幅器、光変調器、光発振器、光集積回路 |
JPWO2007141956A1 (ja) * | 2006-06-09 | 2009-10-15 | 国立大学法人 東京大学 | 光増幅器 |
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