JP6029188B2 - LED package and manufacturing method thereof - Google Patents

LED package and manufacturing method thereof Download PDF

Info

Publication number
JP6029188B2
JP6029188B2 JP2014507043A JP2014507043A JP6029188B2 JP 6029188 B2 JP6029188 B2 JP 6029188B2 JP 2014507043 A JP2014507043 A JP 2014507043A JP 2014507043 A JP2014507043 A JP 2014507043A JP 6029188 B2 JP6029188 B2 JP 6029188B2
Authority
JP
Japan
Prior art keywords
led chip
light
electrode
wiring
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014507043A
Other languages
Japanese (ja)
Other versions
JPWO2013145071A1 (en
Inventor
良崇 橋本
良崇 橋本
政利 藤田
政利 藤田
雅登 鈴木
雅登 鈴木
明宏 川尻
明宏 川尻
和裕 杉山
和裕 杉山
謙磁 塚田
謙磁 塚田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Corp
Original Assignee
Fuji Machine Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Machine Manufacturing Co Ltd filed Critical Fuji Machine Manufacturing Co Ltd
Publication of JPWO2013145071A1 publication Critical patent/JPWO2013145071A1/en
Application granted granted Critical
Publication of JP6029188B2 publication Critical patent/JP6029188B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24101—Connecting bonding areas at the same height
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/2499—Auxiliary members for HDI interconnects, e.g. spacers, alignment aids
    • H01L2224/24996—Auxiliary members for HDI interconnects, e.g. spacers, alignment aids being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/24998—Reinforcing structures, e.g. ramp-like support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/76—Apparatus for connecting with build-up interconnects
    • H01L2224/7615—Means for depositing
    • H01L2224/76151—Means for direct writing
    • H01L2224/76155—Jetting means, e.g. ink jet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H01L2224/821—Forming a build-up interconnect
    • H01L2224/82101—Forming a build-up interconnect by additive methods, e.g. direct writing
    • H01L2224/82102—Forming a build-up interconnect by additive methods, e.g. direct writing using jetting, e.g. ink jet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)

Description

本発明は、一方の面に電極が形成されたＬＥＤチップと、該ＬＥＤチップの光を外方に取り出す光透過型ケースとを備えたＬＥＤパッケージ及びその製造方法に関する発明である。   The present invention relates to an LED package including an LED chip having an electrode formed on one surface, and a light transmission type case for extracting light from the LED chip to the outside, and a method for manufacturing the LED package.

近年、需要が急増しているＬＥＤチップは、特許文献１（特開２０１１−７７４９１号公報）に記載されているように、フェイスアップ型のＬＥＤチップとフリップチップ型のＬＥＤチップに大別される。フェイスアップ型のＬＥＤチップは、チップの電極を上向きにした状態で基板に実装してチップの電極と基板の電極とをボンディングワイヤで接続する構造であり、一方、フリップチップ型のＬＥＤチップは、チップの電極を下向きにしたフェースダウン状態で基板に実装してチップの電極と基板の電極とをバンプや半田ボール等で接続する構造である。   In recent years, LED chips whose demand has been rapidly increasing are roughly classified into face-up type LED chips and flip chip type LED chips as described in Patent Document 1 (Japanese Patent Laid-Open No. 2011-77491). . The face-up type LED chip has a structure in which the chip electrode is mounted on the substrate and the chip electrode and the substrate electrode are connected by a bonding wire, while the flip chip type LED chip is The chip is mounted on a substrate in a face-down state with the electrode of the chip facing down, and the chip electrode and the electrode of the substrate are connected by bumps, solder balls, or the like.

フェイスアップ型のＬＥＤチップを実装したＬＥＤパッケージは、光取り出し側に電極や配線が存在するため、これらがＬＥＤチップの光の放出を妨げてしまい、その分、光取り出し効率が低下する欠点がある。   An LED package mounted with a face-up type LED chip has electrodes and wiring on the light extraction side, which hinders light emission of the LED chip, and has a disadvantage that the light extraction efficiency is reduced accordingly. .

これに対し、フリップチップ型のＬＥＤチップを実装したＬＥＤパッケージは、光取り出し側に電極や配線が存在しないため、フェイスアップ型のＬＥＤパッケージよりも光取り出し効率が高い利点がある。   On the other hand, an LED package on which a flip-chip type LED chip is mounted has an advantage of higher light extraction efficiency than a face-up type LED package because there is no electrode or wiring on the light extraction side.

特開２０１１−７７４９１号公報JP 2011-77491 A

ところで、フェイスアップ型、フリップチップ型のいずれのＬＥＤパッケージでも、光の取り出し側を透明な封止材で封止してパッケージを形成した構造となっている。このような構造では、ＬＥＤチップの実装後に光の取り出し側を封止材で封止してパッケージを形成することになるため、使用するパッケージ材（封止材）としては、ＬＥＤチップやＬＥＤチップを実装するケースの接続信頼性や耐熱性等に悪影響を与えないような材料（例えば充填時の温度が比較的低い樹脂等）を使用しなければならない。このため、充填時の温度が比較的高い材料（例えばガラス等）は、たとえ光学的特性（透明性等）や耐候性等に優れていても、ＬＥＤチップやＬＥＤチップを実装するケースの接続信頼性や耐熱性等に悪影響を与える懸念があるため、パッケージ材（封止材）としては使用できない。このため、パッケージ材（封止材）の選択の幅が狭くなり、光学的特性（透明性等）、耐候性、耐熱性等の要求を全て満たすＬＥＤパッケージを製造することは困難であった。   By the way, both face-up type and flip chip type LED packages have a structure in which the light extraction side is sealed with a transparent sealing material to form the package. In such a structure, since the light extraction side is sealed with a sealing material after mounting the LED chip to form a package, the package material (sealing material) to be used is an LED chip or an LED chip. It is necessary to use a material that does not adversely affect the connection reliability, heat resistance, etc. of the case for mounting (for example, a resin having a relatively low temperature during filling). For this reason, a material with a relatively high filling temperature (such as glass) has excellent optical properties (transparency, etc.) and weather resistance, etc., but the connection reliability of the LED chip and the case in which the LED chip is mounted is reliable. Since there is a concern of adversely affecting the properties and heat resistance, it cannot be used as a package material (sealing material). For this reason, the selection range of the package material (sealing material) is narrowed, and it has been difficult to manufacture an LED package that satisfies all the requirements of optical characteristics (transparency, etc.), weather resistance, heat resistance, and the like.

そこで、本発明が解決しようとする課題は、光学的特性（透明性等）、耐候性、耐熱性等を向上できるＬＥＤパッケージ及びその製造方法を提供することである。   Therefore, the problem to be solved by the present invention is to provide an LED package that can improve optical characteristics (transparency, etc.), weather resistance, heat resistance, and the like, and a manufacturing method thereof.

上記課題を解決するために、請求項１に係る発明は、一方の面に電極が形成されたＬＥＤチップと、該ＬＥＤチップの光を外方に取り出す光透過型ケースとを備え、回路基板に表面実装するＬＥＤパッケージにおいて、前記光透過型ケースのうちの光取り出し側とは反対側の面には、水平に延びる電極を有するリードフレームが設けられていると共に、前記ＬＥＤチップを実装するためのチップ実装凹部が前記ＬＥＤチップの高さ相当の深さの凹部となるように形成され、前記ＬＥＤチップは、前記電極が形成された面と反対側の面を発光面とするフリップチップ型のＬＥＤチップであり、前記電極が形成された面を前記光透過型ケースの光取り出し側とは反対側に向けて該光透過型ケースのチップ実装凹部内に実装されて、該ＬＥＤチップの電極が前記リードフレームの電極と同一高さとなり、前記チップ実装凹部内のうちの前記ＬＥＤチップの周囲には、絶縁材が充填されて該ＬＥＤチップの電極と前記リードフレームの電極との間の配線経路が水平に延びるように形成されて平坦化され、前記ＬＥＤチップの電極と前記リードフレームの電極との間を接続する配線のパターンが前記配線経路上に導電性インクで水平に延びる線状又は帯状又は面状に形成され、前記光透過型ケースのうちの光取り出し側とは反対側に、放熱性部材が設けられ、前記放熱性部材は、高熱伝導性絶縁材料で形成されて前記ＬＥＤチップの電極側の面及び前記配線に密着して、前記ＬＥＤチップ及び前記配線で発生した熱を前記回路基板へ伝達して放熱させると共に、前記ＬＥＤチップ及び前記配線を封止する封止材としても機能することを特徴とするものである。 In order to solve the above problems, the invention according to claim 1, comprising a LED chip having electrodes formed on one surface, and a light transmissive case of extracting light of the LED chip to the outside, the circuit board In the surface-mounted LED package, a lead frame having a horizontally extending electrode is provided on a surface of the light transmissive case opposite to the light extraction side, and the LED chip is mounted on the surface. The chip mounting recess is formed to be a recess having a depth corresponding to the height of the LED chip, and the LED chip is a flip chip type LED having a light emitting surface on a surface opposite to the surface on which the electrodes are formed. a chip, the electrode is formed faces the light extraction side of the light transmission type case is mounted in the chip mounting recess of the light transmissive case toward the opposite side, the LED chip Electrode is an electrode of the same height of the lead frame, the periphery of the LED chips of the chip mounting recess, between the electrodes of the lead frame and the electrodes of the LED chip insulating material filled A wiring pattern is formed so as to extend horizontally and is flattened, and a wiring pattern connecting the electrodes of the LED chip and the electrodes of the lead frame is linearly extending horizontally on the wiring path with conductive ink. Alternatively , a heat radiation member is provided on the opposite side of the light transmission type case from the light extraction side of the light transmission type case, and the heat radiation member is formed of a high thermal conductive insulating material and is used for the LED. In close contact with the electrode side surface of the chip and the wiring, heat generated in the LED chip and the wiring is transferred to the circuit board to dissipate the heat, and the LED chip and the wiring It is characterized in that also functions as a sealing material for sealing.

この構成では、光透過型ケースのチップ実装凹部内にＬＥＤチップを実装する構造であるため、ＬＥＤチップの実装前に、光透過型ケースを作製することができる。これにより、光透過型ケースの作製時に、ＬＥＤチップやＬＥＤチップを実装するケースの接続信頼性や耐熱性等に配慮する必要がなくなり、光透過型ケースを光学的特性（透明性等）、耐候性、耐熱性等に優れた材料（例えばガラス等）で形成することができ、ＬＥＤパッケージの光学的特性（透明性等）、耐候性、耐熱性等を向上させることができる。しかも、ＬＥＤチップの電極とリードフレームの電極との間を接続する配線のパターンを導電性インクで形成するようにしているため、ワイヤボンディングを使用せずに配線でき、ワイヤボンディング時の熱的な影響を受けずに済む利点もある。
更に、光透過型ケースのうちの光取り出し側とは反対側に、ＬＥＤチップ及び配線で発生した熱を回路基板へ伝達して放熱させる放熱性部材として、高熱伝導性絶縁材料をＬＥＤチップの電極側の面及び配線に密着してＬＥＤチップ及び配線を封止する封止材としても機能するように設けたので、ＬＥＤチップ及び配線で発生した熱を放熱性部材を介して回路基板に効率良く放熱することができ、ＬＥＤチップの温度上昇を抑制して発光量を増やすことができると共に、放熱性部材が封止材としても機能することで、これらを別々に設ける必要がない。 In this configuration, since the LED chip is mounted in the chip mounting recess of the light transmissive case, the light transmissive case can be manufactured before mounting the LED chip. This eliminates the need to consider the connection reliability and heat resistance of the LED chip and the case in which the LED chip is mounted when manufacturing the light transmissive case, making the light transmissive case optical properties (transparency, etc.) and weather resistance. The material can be formed of a material (for example, glass) having excellent properties and heat resistance, and the optical characteristics (transparency, etc.), weather resistance, heat resistance, and the like of the LED package can be improved. In addition, since the wiring pattern for connecting between the electrode of the LED chip and the electrode of the lead frame is formed with conductive ink, wiring can be performed without using wire bonding, and the thermal pattern during wire bonding can be reduced. There is also the advantage of not being affected.
Further, on the opposite side of the light transmission type case to the light extraction side, a highly heat-conductive insulating material is used as an electrode of the LED chip as a heat radiating member that transfers heat generated by the LED chip and wiring to the circuit board to dissipate heat. Since it is provided so as to function as a sealing material that seals the LED chip and the wiring in close contact with the side surface and the wiring, the heat generated in the LED chip and the wiring is efficiently applied to the circuit board through the heat radiating member. It is possible to dissipate heat and suppress the temperature rise of the LED chip to increase the amount of light emission, and the heat dissipating member also functions as a sealing material, so that it is not necessary to provide them separately.

本発明は、光透過型ケースに実装するＬＥＤチップとして、電極が形成された面と反対側の面を発光面とするフリップチップ型のＬＥＤチップを用いると共に、光透過型ケースのチップ実装凹部がＬＥＤチップの高さ相当の深さの凹部となるように形成され、このフリップチップ型のＬＥＤチップを、電極が形成された面を光透過型ケースの光取り出し側とは反対側に向けて該光透過型ケースのチップ実装凹部内に実装して該ＬＥＤチップの電極がリードフレームの電極と同一高さとなるようにしている。 The present invention, as an LED chip mounted on the light transmissive case, Rutotomoni using a flip-chip type LED chip to electrodes formed surface opposite to the surface of the light-emitting surface, the chip mounting recess of the light transmissive case Is formed so as to be a recess having a depth corresponding to the height of the LED chip, and the flip chip type LED chip is disposed with the surface on which the electrode is formed facing the light extraction side of the light transmission type case. It is mounted in the chip mounting recess of the light transmission type case so that the electrode of the LED chip is flush with the electrode of the lead frame.

このように、フリップチップ型のＬＥＤチップは、電極が形成された面と反対側の面が発光面となるため、発光面を光透過型ケース側に向けた状態で実装でき、光取り出し効率が高いという利点がある。しかも、本発明のＬＥＤパッケージは、光透過型ケースのチップ実装凹部がＬＥＤチップの高さ相当の深さの凹部となるように形成され、該チップ実装凹部内に実装したＬＥＤチップの電極がリードフレームの電極と同一高さとなるように構成されているため、図１３、図１４に示すように、ＬＥＤパッケージを半田ボール等で回路基板に表面実装することが可能となると共に、ＬＥＤパッケージと回路基板との間に、ＬＥＤチップ及び配線で発生した熱を回路基板へ伝達して放熱させる放熱性部材を、ＬＥＤチップ及び配線を封止する封止材としても機能するように設けることが可能となる。 Thus, the flip chip type LED chip has a light emitting surface on the side opposite to the surface on which the electrodes are formed. Therefore, the flip chip type LED chip can be mounted with the light emitting surface facing the light transmission type case, and the light extraction efficiency is high. There is an advantage of high. In addition, the LED package of the present invention is formed so that the chip mounting recess of the light transmission type case becomes a recess having a depth corresponding to the height of the LED chip, and the electrode of the LED chip mounted in the chip mounting recess leads Since it is configured to have the same height as the electrode of the frame, the LED package can be surface-mounted on a circuit board with solder balls or the like as shown in FIGS. A heat dissipating member that transfers heat generated by the LED chip and the wiring to the circuit board and dissipates the heat can be provided between the substrate and the substrate so as to function as a sealing material for sealing the LED chip and the wiring. Become.

本発明は、請求項２のように、光透過型ケースをレンズとして機能させるように形成しても良い。この場合、光透過型ケースの外面側をレンズ形状に形成しても良いし、光透過型ケースの内面側にフレネルレンズ、レンチキュラー、レンズアレイ等を形成しても良い。光透過型ケースをレンズとして機能させるように形成すれば、光透過型ケースとレンズとを１つの部品で構成でき、部品点数削減の効果が得られるが、本発明は、光透過型ケースとは別に形成したレンズを光透過型ケースに装着するようにしても良いことは言うまでもない。 The present invention, as claimed in claim 2 may be formed so as to function optically transparent casing as a lens. In this case, the outer surface side of the light transmissive case may be formed in a lens shape, or a Fresnel lens, a lenticular, a lens array, or the like may be formed on the inner surface side of the light transmissive case. If the light transmissive case is formed to function as a lens, the light transmissive case and the lens can be configured with one component, and the effect of reducing the number of components can be obtained. Needless to say, a separately formed lens may be attached to the light transmission type case.

また、請求項３のように、光透過型ケースのうちの光取り出し側とは反対側（内面側）に、ＬＥＤチップの光を反射する光反射面を該ＬＥＤチップの周囲を取り巻くように形成しても良い。このようにすれば、光透過型ケースに実装したＬＥＤチップの周囲から光取り出し側とは反対側に放出された光を光反射面で反射して光透過型ケースから外方に放出させることができ、光取り出し効率を高めることができる。 Further, as in claim 3 , a light reflecting surface for reflecting the light of the LED chip is formed on the opposite side (inner surface side) of the light transmission type case to the light extraction side so as to surround the periphery of the LED chip. You may do it. In this way, the light emitted from the periphery of the LED chip mounted on the light transmissive case to the side opposite to the light extraction side is reflected by the light reflecting surface and emitted outward from the light transmissive case. And the light extraction efficiency can be increased.

この場合、請求項４のように、配線は、光反射面を兼ねるように面状に形成しても良い。このようにすれば、配線と光反射面とを同時に形成でき、生産性を向上できる。 In this case, as in claim 4 , the wiring may be formed in a planar shape so as to also serve as a light reflecting surface. In this way, the wiring and the light reflecting surface can be formed simultaneously, and productivity can be improved.

また、請求項５のように、光透過型ケースのうちの光取り出し側とは反対側の面（内面）に、光反射防止処理を施すようにしても良い。このようにすれば、ＬＥＤチップから放出された光が光透過型ケースの内面で反射される量を低減できるため、ＬＥＤチップから放出された光が光透過型ケースの内面から外面へ効率的に透過できるようになり、光取り出し効率を高めることができる。 Further, as described in claim 5 , a light reflection preventing process may be performed on a surface (inner surface) opposite to the light extraction side in the light transmission type case. In this way, since the amount of light emitted from the LED chip is reflected by the inner surface of the light transmissive case, the light emitted from the LED chip can be efficiently transferred from the inner surface to the outer surface of the light transmissive case. The light can be transmitted and the light extraction efficiency can be increased.

また、請求項６のように、光透過型ケースは、放出する光の特性（波長、色合い等）を変化させる蛍光体が混入された材料で形成しても良い。このようにすれば、光透過型ケースの形成時に、混入する蛍光体を変更することで、ＬＥＤパッケージの発光特性を容易に変化させることができる。 Further, as in claim 6 , the light transmissive case may be formed of a material mixed with a phosphor that changes the characteristics (wavelength, hue, etc.) of the emitted light. If it does in this way, the emission characteristic of an LED package can be easily changed by changing the fluorescent substance mixed at the time of formation of a light transmission type case.

或は、請求項７のように、光透過型ケースのうちの光取り出し側とは反対側の面（内面）に、放出する光の特性を変化させる蛍光体層を形成しても良い。このようにすれば、蛍光体層を形成する蛍光体を変更することで、ＬＥＤパッケージの発光特性を容易に変化させることができる。 Or you may form the fluorescent substance layer which changes the characteristic of the light to discharge | release in the surface (inner surface) on the opposite side to the light extraction side of a light transmission type case like Claim 7 . If it does in this way, the light emission characteristic of an LED package can be easily changed by changing the fluorescent substance which forms a fluorescent substance layer.

本発明のＬＥＤパッケージの製造方法は、請求項８のように、ＬＥＤチップの電極が形成された面を光透過型ケースとは反対側に向けて該ＬＥＤチップを該光透過型ケースのチップ実装凹部内に実装する工程と、前記チップ実装凹部内のうちの前記ＬＥＤチップの周囲に絶縁材を充填して前記ＬＥＤチップの電極と前記リードフレームの電極との間の配線経路を水平に延びるように形成して平坦化する絶縁材充填工程と、前記ＬＥＤチップの電極と前記光透過型ケースの電極とを接続する配線のパターンを前記配線経路上に導電性インクで水平に延びる線状又は帯状又は面状に形成する配線工程と、前記光透過型ケースのうちの光取り出し側とは反対側に、前記ＬＥＤチップ及び前記配線で発生した熱を前記回路基板へ伝達して放熱させる放熱性部材として、高熱伝導性絶縁材料を前記ＬＥＤチップの電極側の面及び前記配線に密着させて前記ＬＥＤチップ及び前記配線を封止する封止材としても機能するように設ける工程とを含むようにすれば良い。 The method of manufacturing an LED package according to the present invention is as described in claim 8 , wherein the LED chip is mounted in the chip of the light transmissive case with the surface on which the electrode of the LED chip is formed facing away from the light transmissive case. Mounting in the recess, and filling the insulating material around the LED chip in the chip mounting recess so as to horizontally extend the wiring path between the electrode of the LED chip and the electrode of the lead frame Forming an insulating material to be flattened, and a wiring pattern for connecting the electrode of the LED chip and the electrode of the light transmission type case in a linear or strip shape extending horizontally with conductive ink on the wiring path or a wiring forming a planar, on the side opposite to the light extraction side of the light transmissive case, release dissipating by transferring heat generated by the LED chip and the wiring to the circuit board As sex members, to include the step of providing to function also high thermal conductivity insulating material as a sealing material for sealing the LED chip and the wiring in close contact to the surface and the wiring electrode of the LED chip You can do it.

図１（ａ）〜（ｃ）は本発明の実施例１のＬＥＤパッケージの製造方法を説明する工程図である。FIGS. 1A to 1C are process diagrams illustrating a method for manufacturing an LED package of Example 1 of the present invention. 図２（ａ）〜（ｃ）は本発明の実施例２のＬＥＤパッケージの製造方法を説明する工程図である。2A to 2C are process diagrams illustrating a method for manufacturing an LED package of Example 2 of the present invention. 図３（ａ）〜（ｄ）は本発明の実施例３のＬＥＤパッケージの製造方法を説明する工程図である。FIGS. 3A to 3D are process diagrams for explaining a method for manufacturing an LED package of Example 3 of the present invention. 図４（ａ）〜（ｄ）は本発明の実施例４のＬＥＤパッケージの製造方法を説明する工程図である。4A to 4D are process diagrams illustrating a method for manufacturing an LED package of Example 4 of the present invention. 図５は本発明の実施例５のＬＥＤパッケージを回路基板に実装した構造を示す断面図である。FIG. 5 is a cross-sectional view showing a structure in which the LED package of Example 5 of the present invention is mounted on a circuit board. 図６は本発明の実施例６のＬＥＤパッケージの構造を示す断面図である。FIG. 6 is a sectional view showing the structure of an LED package of Example 6 of the present invention. 図７は本発明の実施例７のＬＥＤパッケージの構造を示す断面図である。FIG. 7 is a sectional view showing the structure of an LED package of Example 7 of the present invention. 図８は本発明の実施例８のＬＥＤパッケージの構造を示す断面図である。FIG. 8 is a sectional view showing the structure of an LED package of Example 8 of the present invention. 図９は本発明の実施例９のＬＥＤパッケージの構造を示す断面図である。FIG. 9 is a sectional view showing the structure of an LED package of Example 9 of the present invention. 図１０（ａ）は本発明の実施例１０のＬＥＤパッケージの平面図、同図（ｂ）は、（ａ）のＡ−Ａ断面図である。FIG. 10A is a plan view of an LED package of Example 10 of the present invention, and FIG. 10B is a cross-sectional view taken along line AA of FIG. 図１１（ａ）は本発明の実施例１１のＬＥＤパッケージの平面図、同図（ｂ）は、（ａ）のＢ−Ｂ断面図である。FIG. 11A is a plan view of the LED package of Example 11 of the present invention, and FIG. 11B is a cross-sectional view taken along the line BB of FIG. 図１２は本発明の実施例１２のＬＥＤパッケージの構造を示す断面図である。FIG. 12 is a cross-sectional view showing the structure of an LED package of Example 12 of the present invention. 図１３は本発明の実施例１３のＬＥＤパッケージを回路基板に実装した構造を示す断面図である。FIG. 13 is a cross-sectional view showing a structure in which the LED package of Example 13 of the present invention is mounted on a circuit board. 図１４は本発明の実施例１４のＬＥＤパッケージを回路基板に実装した構造を示す断面図である。FIG. 14 is a cross-sectional view showing a structure in which the LED package of Example 14 of the present invention is mounted on a circuit board.

以下、本発明を実施するための形態を具体化した幾つかの実施例を説明する。   Hereinafter, some embodiments embodying the mode for carrying out the present invention will be described.

図１を用いて本発明の実施例１のＬＥＤパッケージ１０の製造方法を説明する。
本実施例１のＬＥＤパッケージ１０は、光透過型ケース作製工程、実装工程、配線工程等を経て製造する。以下、これら各工程を説明する。A method of manufacturing the LED package 10 according to the first embodiment of the present invention will be described with reference to FIG.
The LED package 10 of the first embodiment is manufactured through a light transmissive case manufacturing process, a mounting process, a wiring process, and the like. Hereinafter, each of these steps will be described.

［光透過型ケース作製工程］
図１（ａ）に示すように、光透過型ケース作製工程では、ＬＥＤチップ１２を実装する実装部材としても機能する光透過型ケース１１を作製する。光透過型ケース１１の作製方法は、成形、切削、エッチング等、どのような方法を用いても良い。光透過型ケース作製工程は、ＬＥＤチップ１２を実装する前であるため、ＬＥＤチップ１２やＬＥＤチップ１２を実装する光透過型ケース１１の接続信頼性や耐熱性等に配慮する必要がなく、ＬＥＤチップ１２の光を透過させる光透過型ケース１１として要求される光学的特性（透明性等）、耐候性、耐熱性等に優れた材料（例えばガラス等）を用いて光透過型ケース１１を作製すれば良い。[Light transmission case manufacturing process]
As shown in FIG. 1A, in the light transmissive case manufacturing process, a light transmissive case 11 that also functions as a mounting member for mounting the LED chip 12 is manufactured. As a manufacturing method of the light transmission type case 11, any method such as molding, cutting, and etching may be used. Since the light transmissive case manufacturing process is before the LED chip 12 is mounted, there is no need to consider the connection reliability and heat resistance of the LED chip 12 and the light transmissive case 11 on which the LED chip 12 is mounted. The light transmissive case 11 is manufactured using a material (for example, glass) excellent in optical characteristics (transparency, etc.), weather resistance, heat resistance, etc. required for the light transmissive case 11 that transmits the light of the chip 12. Just do it.

光透過型ケース１１の形状は、ＬＥＤチップ１２を実装可能で、且つ、ＬＥＤチップ１２の光を透過可能な形状であれば、どの様な形状であっても良く、例えば、平盤状に形成しても良い。本実施例１では、光透過型ケース１１をレンズとして機能させるために、光透過型ケース１１の外面側（光取り出し側）をレンズ形状に形成している。   The shape of the light transmissive case 11 may be any shape as long as the LED chip 12 can be mounted and the LED chip 12 can transmit light. For example, the light transmissive case 11 is formed in a flat plate shape. You may do it. In Example 1, in order for the light transmissive case 11 to function as a lens, the outer surface side (light extraction side) of the light transmissive case 11 is formed in a lens shape.

更に、本実施例１では、光透過型ケース１１のうちの光取り出し側とは反対側（内面側）に、リードフレーム１３を取り付ける。リードフレーム１３の取付方法は、光透過型ケース１１を成形する際に、リードフレーム１３をインサート成形するようにしても良いし、成形、切削、エッチング等で作製した光透過型ケース１１にリードフレーム１３を接合等により後付けするようにしても良い。   Further, in the first embodiment, the lead frame 13 is attached to the side (inner surface side) opposite to the light extraction side of the light transmission type case 11. The lead frame 13 may be attached by insert molding the lead frame 13 when the light transmissive case 11 is molded, or the light transmissive case 11 manufactured by molding, cutting, etching, etc. 13 may be retrofitted by bonding or the like.

［実装工程］
図１（ｂ）に示すように、光透過型ケース１１のうちの光取り出し側とは反対側の面（内面）にＬＥＤチップ１２を実装する。この際、ＬＥＤチップ１２は、電極１４が形成された面とは反対側の面を光透過型ケース１１の内面に接着剤等で接合する。ＬＥＤチップ１２は、フェイスアップ型のＬＥＤチップ、フリップチップ型のＬＥＤチップのいずれを用いても良いが、フリップチップ型のＬＥＤチップを用いる場合は、バンプや半田ボール等の電極接続材は不要であり、電極のみが存在すれば良い。[Mounting process]
As shown in FIG. 1B, the LED chip 12 is mounted on the surface (inner surface) opposite to the light extraction side of the light transmission type case 11. At this time, the surface of the LED chip 12 opposite to the surface on which the electrode 14 is formed is joined to the inner surface of the light transmissive case 11 with an adhesive or the like. The LED chip 12 may be either a face-up type LED chip or a flip chip type LED chip. However, when a flip chip type LED chip is used, electrode connection materials such as bumps and solder balls are not required. Yes, only the electrodes need be present.

フリップチップ型のＬＥＤチップは、電極が形成された面と反対側の面を発光面とするため、発光面を光透過型ケース１１側に向けた状態で実装でき、光取り出し効率が高いという利点がある。   Since the flip chip type LED chip has a light emitting surface on the side opposite to the surface on which the electrodes are formed, it can be mounted with the light emitting surface facing the light transmissive case 11 and has an advantage of high light extraction efficiency. There is.

一方、フェイスアップ型のＬＥＤチップは、電極側の面が発光面となる構造のものが一般的であるため、電極側の面が発光面となるＬＥＤチップを使用する場合は、後述する配線工程終了後に、ＬＥＤチップの電極側の面から光透過型ケース１１とは反対側に放出された光を光透過型ケース１１側に反射する光反射部材を設けるようにしても良い。   On the other hand, the face-up type LED chip is generally structured so that the surface on the electrode side becomes the light emitting surface. Therefore, when using the LED chip whose surface on the electrode side becomes the light emitting surface, the wiring process described later is used. After the completion, a light reflecting member that reflects light emitted from the electrode-side surface of the LED chip to the side opposite to the light transmissive case 11 toward the light transmissive case 11 may be provided.

［配線工程］
図１（ｃ）に示すように、ＬＥＤチップ１２の電極１４とリードフレーム１３の電極との間をボンディングワイヤ１５で接続する。[Wiring process]
As shown in FIG. 1C, the bonding wire 15 connects the electrode 14 of the LED chip 12 and the electrode of the lead frame 13.

以上のようにして製造したＬＥＤパッケージ１０は、光透過型ケース１１を照明対象物側に向けて使用される。この構造では、光透過型ケース１１が外部からの衝撃を防護する防護壁としての役割を果たすため、光透過型ケース１１の内側に実装したＬＥＤチップ１２やその配線部分を封止する封止材を省略した構成としても良い。   The LED package 10 manufactured as described above is used with the light transmission type case 11 facing the object to be illuminated. In this structure, since the light transmissive case 11 serves as a protective wall that protects external impacts, the LED chip 12 mounted inside the light transmissive case 11 and the sealing material for sealing the wiring portion thereof are used. The configuration may be omitted.

勿論、ＬＥＤパッケージ１０の光取り出し側とは反対側に、ＬＥＤチップ１２及びその配線部分を封止する封止材を充填しても良いことは言うまでもない。この場合、封止材は、ＬＥＤパッケージ１０の光取り出し側とは反対側に充填するため、透明性は必要とせず、光が透過しない封止材を用いることが可能となる。これにより、封止材の選択の幅が広がり、ＬＥＤチップ１２やＬＥＤチップ１２を実装する光透過型ケース１１の接続信頼性や耐熱性等に悪影響を与えない封止材を容易に選択できる利点がある。   Of course, it goes without saying that the LED chip 12 and the sealing material for sealing the wiring portion thereof may be filled on the side opposite to the light extraction side of the LED package 10. In this case, since the sealing material is filled on the side opposite to the light extraction side of the LED package 10, transparency is not required and a sealing material that does not transmit light can be used. Thereby, the range of selection of the sealing material is widened, and the advantage that the sealing material that does not adversely affect the connection reliability, heat resistance, and the like of the LED chip 12 and the light transmissive case 11 on which the LED chip 12 is mounted can be easily selected. There is.

以上説明した本実施例１では、光透過型ケース１１にＬＥＤチップ１２を実装する構造であるため、ＬＥＤチップ１２の実装前に、光透過型ケース１１を作製することができる。これにより、光透過型ケース１１の作製時に、ＬＥＤチップ１２やＬＥＤチップ１２を実装する光透過型ケース１１の接続信頼性や耐熱性等に配慮する必要がなくなり、光透過型ケース１１を光学的特性（透明性等）、耐候性、耐熱性等に優れた材料（例えばガラス等）で形成することができ、ＬＥＤパッケージ１０の光学的特性（透明性等）、耐候性、
耐熱性等を向上させることができる。In the first embodiment described above, since the LED chip 12 is mounted on the light transmissive case 11, the light transmissive case 11 can be manufactured before the LED chip 12 is mounted. This eliminates the need to consider the connection reliability and heat resistance of the LED chip 12 and the light transmissive case 11 on which the LED chip 12 is mounted when the light transmissive case 11 is manufactured. It can be formed of a material (for example, glass) having excellent characteristics (transparency, etc.), weather resistance, heat resistance, etc., and optical characteristics (transparency, etc.), weather resistance,
Heat resistance and the like can be improved.

また、本実施例１では、ボンディングワイヤ１５がＬＥＤパッケージ１０の光取り出し側とは反対側に位置し、ＬＥＤチップ１２から放出された光がボンディングワイヤ１５で遮られないため、ボンディングワイヤ１５を細くする必要がなくなり、ボンディングワイヤ１５の断線や接続部分の剥がれを防止できると共に、ボンディングワイヤ１５の断面積を増加させて導電性を向上できる利点がある。   In the first embodiment, the bonding wire 15 is positioned on the side opposite to the light extraction side of the LED package 10, and the light emitted from the LED chip 12 is not blocked by the bonding wire 15. There is an advantage that the bonding wire 15 can be prevented from being disconnected and the connecting portion can be prevented from being peeled off, and the electrical conductivity can be improved by increasing the cross-sectional area of the bonding wire 15.

また、本実施例１では、光透過型ケース１１をレンズとして機能させるように形成しているため、光透過型ケース１１とレンズとを１つの部品で構成でき、部品点数を削減できる利点もある。但し、本発明は、光透過型ケース１１とは別に形成したレンズを光透過型ケース１１に装着するようにしても良いことは言うまでもない。   Further, in the first embodiment, since the light transmissive case 11 is formed so as to function as a lens, the light transmissive case 11 and the lens can be configured by one component, and there is an advantage that the number of components can be reduced. . However, it goes without saying that in the present invention, a lens formed separately from the light transmissive case 11 may be attached to the light transmissive case 11.

また、複数の光透過型ケース１１が一体につながった状態で複数のＬＥＤパッケージ１０を一括して作製した後、それを個々のＬＥＤパッケージ１０に切断するようにしても良い。   In addition, after the plurality of LED packages 10 are collectively manufactured in a state where the plurality of light transmissive cases 11 are integrally connected, the individual LED packages 10 may be cut.

次に、図２を用いて本発明の実施例２を説明する。但し、前記実施例１と実質的に同一部分には同一符号を付して説明を省略又は簡略化し、主として異なる部分について説明する。   Next, Embodiment 2 of the present invention will be described with reference to FIG. However, substantially the same parts as those in the first embodiment are denoted by the same reference numerals, description thereof is omitted or simplified, and different parts are mainly described.

前記実施例１では、光透過型ケース１１のうちの光取り出し側とは反対側（内面側）の実装面を平坦に形成して、平坦な実装面上にＬＥＤチップ１２を実装するようにしたが、本発明の実施例２では、リードフレーム１３付きの光透過型ケース１１を作製する際に、図２（ａ）に示すように、光透過型ケース１１のうちの光取り出し側とは反対側（内面側）にチップ実装凹部１７を成形、切削、エッチング等により形成する。   In the first embodiment, the mounting surface of the light transmission type case 11 opposite to the light extraction side (inner surface side) is formed flat, and the LED chip 12 is mounted on the flat mounting surface. However, in Example 2 of the present invention, when the light transmission type case 11 with the lead frame 13 is manufactured, the light transmission side of the light transmission type case 11 is opposite to the light extraction side as shown in FIG. The chip mounting recess 17 is formed on the side (inner surface side) by molding, cutting, etching, or the like.

この後、実装工程に進み、図２（ｂ）に示すように、光透過型ケース１１のチップ実装凹部１７内にＬＥＤチップ１２を実装する。この際、ＬＥＤチップ１２のうちの電極１４が形成された面とは反対側の面をチップ実装凹部１７の底面に接着剤等で接合する。チップ実装凹部１７内に実装したＬＥＤチップ１２の電極１４側の面の高さは、該チップ実装凹部１７の外周囲の高さ（リードフレーム１３の電極の高さ）とほぼ同じ高さであっても良いし、これよりも高くても低くても良い。   Then, it progresses to a mounting process, and as shown in FIG.2 (b), the LED chip 12 is mounted in the chip mounting recessed part 17 of the light transmissive case 11. FIG. At this time, the surface of the LED chip 12 opposite to the surface on which the electrode 14 is formed is joined to the bottom surface of the chip mounting recess 17 with an adhesive or the like. The height of the surface on the electrode 14 side of the LED chip 12 mounted in the chip mounting recess 17 is substantially the same as the height of the outer periphery of the chip mounting recess 17 (the height of the electrode of the lead frame 13). It may be higher or lower than this.

この後、配線工程に進み、図２（ｃ）に示すように、ＬＥＤチップ１２の電極１４とリードフレーム１３の電極との間をボンディングワイヤ１５で接続する。   Thereafter, the process proceeds to a wiring process, and as shown in FIG. 2C, the electrode 14 of the LED chip 12 and the electrode of the lead frame 13 are connected by a bonding wire 15.

以上説明した本実施例２でも、前記実施例１と同様の効果を得ることができる。   In the second embodiment described above, the same effect as that of the first embodiment can be obtained.

次に、図３を用いて本発明の実施例３を説明する。但し、前記実施例１と実質的に同一部分には同一符号を付して説明を省略又は簡略化し、主として異なる部分について説明する。   Next, Embodiment 3 of the present invention will be described with reference to FIG. However, substantially the same parts as those in the first embodiment are denoted by the same reference numerals, description thereof is omitted or simplified, and different parts are mainly described.

前記実施例１では、ＬＥＤチップ１２の電極１４とリードフレーム１３の電極との間をボンディングワイヤ１５で接続するようにしたが、本実施例３では、図３（ｄ）に示すように、ＬＥＤチップ１２の電極１４とリードフレーム１３の電極との間をインクジェット（液滴吐出法）等の印刷法で配線２２を形成するようにしている。   In the first embodiment, the electrode 14 of the LED chip 12 and the electrode of the lead frame 13 are connected by the bonding wire 15. However, in this third embodiment, as shown in FIG. A wiring 22 is formed between the electrode 14 of the chip 12 and the electrode of the lead frame 13 by a printing method such as ink jet (droplet discharge method).

本実施例３のＬＥＤパッケージ１０も、前記実施例１と同様の方法で、図３（ａ）に示すように、リードフレーム１３付きの光透過型ケース１１を作製した後、図３（ｂ）に示すように、光透過型ケース１１のうちの光取り出し側とは反対側の面（内面）にＬＥＤチップ１２を実装し、該ＬＥＤチップ１２のうちの電極１４が形成された面とは反対側の面を光透過型ケース１１の内面に接着剤等で接合する。   In the LED package 10 of the third embodiment, as shown in FIG. 3A, the light transmissive case 11 with the lead frame 13 is manufactured as shown in FIG. As shown in FIG. 3, the LED chip 12 is mounted on the surface (inner surface) opposite to the light extraction side of the light transmission type case 11, and the surface of the LED chip 12 on which the electrode 14 is formed is opposite. The side surface is bonded to the inner surface of the light transmission type case 11 with an adhesive or the like.

この後、絶縁材充填工程に進み、図３（ｃ）に示すように、ＬＥＤチップ１２の電極１４とリードフレーム１３の電極との間の配線経路に存在する段差部に、該配線経路が平滑になるように絶縁材２１を充填し、ＬＥＤチップ１２の側面上端から光透過型ケース１１の内面に向けて傾斜するスロープ状の配線経路（配線下地層）を形成する。この際、絶縁材２１は、絶縁性樹脂（例えばエポキシ系樹脂、シリコン樹脂、アクリル樹脂、ポリイミド系樹脂等）を用いても良いし、或は、無機材料（例えばガラス、窒化アルミニウム等）を用いても良い。絶縁材２１は、充填時の温度がＬＥＤチップ１２や光透過型ケース１１の耐熱温度を越えない絶縁材であれば良く、更には、ＬＥＤチップ１２や光透過型ケース１１に対する密着性に優れ、且つ、これらとの間の熱膨張率の差が小さい絶縁材が望ましい。また、絶縁材２１は、ＬＥＤチップ１２の側面から放出される光が光透過型ケース１１側へ透過できるように、透明な絶縁材が望ましい。   Thereafter, the process proceeds to the insulating material filling step, and the wiring path is smoothed at the step portion existing in the wiring path between the electrode 14 of the LED chip 12 and the electrode of the lead frame 13 as shown in FIG. Insulating material 21 is filled so as to form a slope-like wiring path (wiring base layer) that is inclined from the upper end of the side surface of LED chip 12 toward the inner surface of light transmitting case 11. At this time, the insulating material 21 may be an insulating resin (for example, epoxy resin, silicon resin, acrylic resin, polyimide resin, etc.), or an inorganic material (for example, glass, aluminum nitride, etc.). May be. The insulating material 21 may be an insulating material whose filling temperature does not exceed the heat resistance temperature of the LED chip 12 or the light transmissive case 11, and further has excellent adhesion to the LED chip 12 or the light transmissive case 11, In addition, an insulating material having a small difference in coefficient of thermal expansion between them is desirable. The insulating material 21 is preferably a transparent insulating material so that light emitted from the side surface of the LED chip 12 can be transmitted to the light transmissive case 11 side.

この後、配線工程に進み、図３（ｄ）に示すように、ＬＥＤチップ１２の電極１４とリードフレーム１３の電極との間の配線経路に、インクジェット、ディスペンサ等の液滴吐出法（印刷法）により導電性インクを吐出して配線２２のパターンを形成し、ＬＥＤチップ１２の電極１４とリードフレーム１３の電極との間を配線２２のパターンで接続する。尚、配線２２の形成方法は、液滴吐出の印刷法に限定されず、スプレーやバーコート等の導電性インクの塗布や印刷又は導電材料の実装（貼付）、めっき、ＣＶＤ、ＰＶＤ等の気相蒸着等の方法により形成するようにしても良い。また、パターニングのために、レジストやメタルマスクを使用しても良いし、導電材形成後に切削又はエッチングしても良い。   Thereafter, the process proceeds to a wiring process. As shown in FIG. 3D, a droplet discharge method (printing method) such as an ink jet or a dispenser is applied to a wiring path between the electrode 14 of the LED chip 12 and the electrode of the lead frame 13. The conductive ink is discharged to form a pattern of the wiring 22, and the electrode 14 of the LED chip 12 and the electrode of the lead frame 13 are connected by the pattern of the wiring 22. Note that the method of forming the wiring 22 is not limited to the droplet discharge printing method, and is not limited to the application or printing of conductive ink such as spray or bar coating, or mounting (sticking) of conductive material, plating, CVD, PVD, or the like. You may make it form by methods, such as phase vapor deposition. In addition, a resist or a metal mask may be used for patterning, or cutting or etching may be performed after the conductive material is formed.

以上説明した本実施例３では、前記実施例１と同様の効果が得られると共に、ＬＥＤチップ１２の電極１４とリードフレーム１３の電極との間をワイヤボンディングを使用せずに配線でき、ワイヤボンディング時の熱的な影響を受けずに済む利点もある。   In the third embodiment described above, the same effects as in the first embodiment can be obtained, and the wiring between the electrode 14 of the LED chip 12 and the electrode of the lead frame 13 can be performed without using wire bonding. There is also an advantage that it is not affected by the thermal influence of time.

次に、図４を用いて本発明の実施例４を説明する。但し、前記実施例２と実質的に同一部分には同一符号を付して説明を省略又は簡略化し、主として異なる部分について説明する。   Next, Embodiment 4 of the present invention will be described with reference to FIG. However, substantially the same parts as those in the second embodiment are denoted by the same reference numerals, description thereof is omitted or simplified, and different parts are mainly described.

前記実施例２では、ＬＥＤチップ１２の電極１４とリードフレーム１３の電極との間をボンディングワイヤ１５で接続するようにしたが、本実施例４では、図４（ｄ）に示すように、ＬＥＤチップ１２の電極１４とリードフレーム１３の電極との間をインクジェット（液滴吐出法）等の印刷法で配線２１を形成するようにしている。   In the second embodiment, the electrode 14 of the LED chip 12 and the electrode of the lead frame 13 are connected by the bonding wire 15. However, in the fourth embodiment, as shown in FIG. A wiring 21 is formed between the electrode 14 of the chip 12 and the electrode of the lead frame 13 by a printing method such as ink jet (droplet discharge method).

本実施例４でも、前記実施例２と同様の方法で、図４（ａ）に示すように、チップ実装凹部１７を有するリードフレーム１３付きの光透過型ケース１１を作製した後、図４（ｂ）に示すように、光透過型ケース１１のチップ実装凹部１７内にＬＥＤチップ１２を実装する。   Also in the present Example 4, after the light transmissive case 11 with the lead frame 13 having the chip mounting concave portion 17 was produced as shown in FIG. As shown in b), the LED chip 12 is mounted in the chip mounting recess 17 of the light transmission type case 11.

この後、絶縁材充填工程に進み、図４（ｃ）に示すように、ＬＥＤチップ１２の電極１４とリードフレーム１３の水平に延びる電極との間の配線経路を平滑にするために、該配線経路に存在する凹部（チップ実装凹部１７内のＬＥＤチップ１２周囲の隙間）に、前記実施例３と同様の絶縁材２１を充填して該配線経路を水平に延びるように形成して平坦化する。 Thereafter, the process proceeds to an insulating material filling step, and as shown in FIG. 4C, in order to smooth the wiring path between the electrode 14 of the LED chip 12 and the horizontally extending electrode of the lead frame 13, the wiring A recess existing in the path (a gap around the LED chip 12 in the chip mounting recess 17) is filled with the same insulating material 21 as in the third embodiment, and the wiring path is formed to extend horizontally and flattened. .

この後、配線工程に進み、図４（ｄ）に示すように、ＬＥＤチップ１２の電極１４とリードフレーム１３の電極との間の配線経路上に、インクジェット、ディスペンサ等の液滴吐出法（印刷法）により導電性インクを吐出して配線２２のパターンを水平に延びるように形成し、ＬＥＤチップ１２の電極１４とリードフレーム１３の電極との間を配線２２のパターンで接続する。本実施例４では、ＬＥＤチップ１２の電極１４とリードフレーム１３の電極との間の配線経路が絶縁材２１により水平に延びるように形成されて平坦化されているため、配線２２のパターンをスクリーンやオフセット等の印刷により形成しても良い。或は、前記実施例３の配線形成方法で説明した方法で形成しても良い。 Thereafter, the process proceeds to a wiring process, and as shown in FIG. 4 (d), a droplet discharge method (printing) such as ink jet or dispenser is performed on the wiring path between the electrode 14 of the LED chip 12 and the electrode of the lead frame 13. The pattern of the wiring 22 is formed so as to extend horizontally by discharging conductive ink, and the electrode 14 of the LED chip 12 and the electrode of the lead frame 13 are connected by the pattern of the wiring 22. In the fourth embodiment, the wiring path between the electrode 14 of the LED chip 12 and the electrode of the lead frame 13 is formed so as to extend horizontally by the insulating material 21 and is flattened. Or by printing such as offset. Or you may form by the method demonstrated by the wiring formation method of the said Example 3. FIG.

以上説明した本実施例４でも、前記実施例３と同様の効果が得られる。   In the fourth embodiment described above, the same effect as that of the third embodiment can be obtained.

図５に示す本発明の実施例５では、１個又は複数個のＬＥＤパッケージ１０を回路基板２４に実装している。ＬＥＤパッケージ１０は、光透過型ケース１１を外側（回路基板２４とは反対側）に向け、ＬＥＤチップ１２を回路基板２４側に向けて実装する。ＬＥＤパッケージ１０は、前記実施例１〜４のいずれの方法で製造したＬＥＤパッケージ１０を用いても良い。   In the fifth embodiment of the present invention shown in FIG. 5, one or a plurality of LED packages 10 are mounted on the circuit board 24. The LED package 10 is mounted with the light transmissive case 11 facing outward (the side opposite to the circuit board 24) and the LED chip 12 facing the circuit board 24. As the LED package 10, the LED package 10 manufactured by any of the methods of Examples 1 to 4 may be used.

ＬＥＤチップ１２を回路基板２４に実装する際に、ＬＥＤパッケージ１０のリードフレーム１３の端子部と回路基板２４のパッド部との間を半田ボール２５等で接続する。ＬＥＤチップ１２を回路基板２４に実装した後、ＬＥＤパッケージ１０と回路基板２４との間の隙間に、絶縁性樹脂等の封止材２６を充填する。この場合、封止材２６は、ＬＥＤパッケージ１０の光取り出し側とは反対側に充填するため、透明性は必要とされず、光が透過しない封止材を用いることが可能となる。これにより、封止材２６の選択の幅が広がり、ＬＥＤチップ１２やＬＥＤチップ１２を実装する光透過型ケース１１の接続信頼性や耐熱性等に悪影響を与えない封止材２６を容易に選択できる利点がある。   When the LED chip 12 is mounted on the circuit board 24, the terminal part of the lead frame 13 of the LED package 10 and the pad part of the circuit board 24 are connected by solder balls 25 or the like. After the LED chip 12 is mounted on the circuit board 24, a gap between the LED package 10 and the circuit board 24 is filled with a sealing material 26 such as an insulating resin. In this case, since the sealing material 26 is filled on the side opposite to the light extraction side of the LED package 10, transparency is not required, and a sealing material that does not transmit light can be used. Thereby, the selection range of the sealing material 26 is widened, and the sealing material 26 that does not adversely affect the connection reliability, heat resistance, and the like of the LED chip 12 and the light transmissive case 11 on which the LED chip 12 is mounted is easily selected. There are advantages you can do.

以上説明した本実施例５では、ＬＥＤパッケージ１０と回路基板２４との間に封止材２６を充填するようにしたので、ＬＥＤパッケージ１０のＬＥＤチップ１２やその配線部分を封止できると共に、ＬＥＤパッケージ１０と回路基板２４とを封止材２６で結合でき、機械的強度を向上できる。   In the fifth embodiment described above, since the sealing material 26 is filled between the LED package 10 and the circuit board 24, the LED chip 12 and its wiring portion of the LED package 10 can be sealed, and the LED The package 10 and the circuit board 24 can be coupled by the sealing material 26, and the mechanical strength can be improved.

前記実施例１〜５のＬＥＤパッケージ１０は、光透過型ケース１１をレンズとして機能させるために、光透過型ケース１１の外面側（光取り出し側）をレンズ形状に形成したが、図６に示す本発明の実施例６では、光透過型ケース１１をレンズとして機能させるために、光透過型ケース１１の内面側（光取り出し側とは反対側）に、フレネルレンズ、レンチキュラー、レンズアレイ等のレンズ機能部２８を形成している。レンズ機能部２８は、ＬＥＤパッケージ１０の用途に応じて、広角、集光等の光学特性を変更すれば良い。その他の構成は、前記実施例１〜５のいずれかと同じであり、同様の効果が得られる。   In the LED packages 10 of Examples 1 to 5, the outer surface side (light extraction side) of the light transmissive case 11 is formed in a lens shape so that the light transmissive case 11 functions as a lens. In Example 6 of the present invention, a lens such as a Fresnel lens, a lenticular lens, or a lens array is provided on the inner surface side (the side opposite to the light extraction side) of the light transmissive case 11 so that the light transmissive case 11 functions as a lens. A functional unit 28 is formed. The lens function unit 28 may change optical characteristics such as wide angle and light collection according to the application of the LED package 10. Other configurations are the same as those in any of the first to fifth embodiments, and the same effect can be obtained.

図７に示す本発明の実施例７では、光透過型ケース１１のうちの光取り出し側とは反対側の面（内面）に、光反射防止処理３１を施すようにしている。光反射防止処理３１は、例えば、表面加工により光透過型ケース１１の内面に反射防止用の細かい凹凸（モスアイ構造）を形成しても良いし、コーティング等により光透過型ケース１１の内面に光反射防止処理層を形成しても良い。その他の構成は、前記実施例１〜５のいずれかと同じである。   In the seventh embodiment of the present invention shown in FIG. 7, the light reflection preventing treatment 31 is applied to the surface (inner surface) opposite to the light extraction side of the light transmission case 11. The light reflection preventing treatment 31 may form, for example, fine irregularities (moth eye structure) for reflection prevention on the inner surface of the light transmission type case 11 by surface processing, or light on the inner surface of the light transmission type case 11 by coating or the like. An antireflection treatment layer may be formed. Other configurations are the same as those in any of the first to fifth embodiments.

本実施例７では、ＬＥＤチップ１２から放出された光が光透過型ケース１１の内面で反射される量を光反射防止処理３１により低減できるため、ＬＥＤチップ１２から放出された光が光透過型ケース１１の内面から外面へ効率的に透過できるようになり、光取り出し効率を高めることができる。   In the seventh embodiment, the amount of the light emitted from the LED chip 12 reflected by the inner surface of the light transmissive case 11 can be reduced by the light reflection preventing process 31, so that the light emitted from the LED chip 12 is light transmissive. The case 11 can be efficiently transmitted from the inner surface to the outer surface, and the light extraction efficiency can be increased.

図８に示す本発明の実施例８では、光透過型ケース１１は、放出する光の特性（波長、色合い等）を変化させる蛍光体３２が混入された材料で形成している。その他の構成は、前記実施例１〜７のいずれかと同じである。   In the eighth embodiment of the present invention shown in FIG. 8, the light transmission type case 11 is formed of a material mixed with a phosphor 32 that changes the characteristics (wavelength, hue, etc.) of the emitted light. Other configurations are the same as those in any of the first to seventh embodiments.

本実施例８では、光透過型ケース１１の形成時に、混入する蛍光体３２を変更することで、ＬＥＤパッケージ１０の発光特性を容易に変化させることができる。   In the eighth embodiment, the emission characteristics of the LED package 10 can be easily changed by changing the phosphor 32 to be mixed when the light transmission case 11 is formed.

図９に示す本発明の実施例９では、光透過型ケース１１のうちの光取り出し側とは反対側の面（内面）に、放出する光の特性（波長、色合い等）を変化させる蛍光体層３３を、蛍光塗料の塗布等により形成している。蛍光体層３３は、１層のみであっても良いし、複数種の蛍光体層を積層しても良い。複数種の蛍光体層を積層する場合は、多段励起を回避するために、積層順序を最適化すると良い。ここで、多段励起とは、１つ目の蛍光体で波長が変換された光が他の蛍光体で再変換されることである。尚、蛍光体で光の波長を変換する度に変換損失が発生するため、基本的には変換回数が少ない方が良い。その他の構成は、前記実施例１〜７のいずれかと同じである。   In Embodiment 9 of the present invention shown in FIG. 9, a phosphor that changes the characteristics (wavelength, hue, etc.) of emitted light on the surface (inner surface) opposite to the light extraction side of the light transmission case 11. The layer 33 is formed by applying a fluorescent paint or the like. The phosphor layer 33 may be only one layer, or a plurality of types of phosphor layers may be laminated. When a plurality of types of phosphor layers are stacked, the stacking order may be optimized in order to avoid multistage excitation. Here, multistage excitation means that light whose wavelength has been converted by the first phosphor is reconverted by another phosphor. Since a conversion loss occurs each time the wavelength of light is converted by the phosphor, it is basically better that the number of conversions is smaller. Other configurations are the same as those in any of the first to seventh embodiments.

以上説明した本実施例９では、蛍光体層３３を形成する蛍光体を変更することで、ＬＥＤパッケージ１０の発光特性を容易に変化させることができる。   In the ninth embodiment described above, the light emission characteristics of the LED package 10 can be easily changed by changing the phosphor forming the phosphor layer 33.

また、蛍光体層３３を形成した光透過型ケース１１にＬＥＤチップ１２を実装する前に、検査光源を蛍光体層３３に照射して、蛍光体の状態（量や斑等）を検査するようにしても良い。このようにすれば、光透過型ケース１１にＬＥＤチップ１２を実装する前に、光透過型ケース１１内面の蛍光体層３３の良／不良を検査して、不良の蛍光体層３３を持つ光透過型ケース１１を排除することができ、ＬＥＤパッケージ１０の歩留まりや品質を向上できる。   Further, before mounting the LED chip 12 on the light transmissive case 11 on which the phosphor layer 33 is formed, the phosphor layer 33 is irradiated with an inspection light source to inspect the phosphor state (amount, spots, etc.). Anyway. In this way, before mounting the LED chip 12 on the light transmissive case 11, the quality of the phosphor layer 33 on the inner surface of the light transmissive case 11 is inspected to determine whether the light having the defective phosphor layer 33 is present. The transmissive case 11 can be eliminated, and the yield and quality of the LED package 10 can be improved.

図１０に示す本発明の実施例１０では、前記実施例４（図４）と同様の方法で、光透過型ケース１１の作製から絶縁材２１の充填までの工程を実行した後、ＬＥＤチップ１２の電極１４とリードフレーム１３の電極との間を接続する配線２２を印刷又は塗布で形成する際に、配線２２を銀ナノインク等により水平に延びる面状に形成して、光透過型ケース１１の内面側を面状の配線２２で覆って、これを光反射面としても機能させる。その他の構成は、前記実施例４と同じである。 In Example 10 of the present invention shown in FIG. 10, the steps from the production of the light transmission type case 11 to the filling of the insulating material 21 are executed by the same method as in Example 4 (FIG. 4), and then the LED chip 12. When the wiring 22 that connects between the electrode 14 and the electrode of the lead frame 13 is formed by printing or coating, the wiring 22 is formed in a planar shape that extends horizontally with silver nano-ink or the like, so that the light transmission type case 11 The inner surface side is covered with a planar wiring 22, and this is also functioned as a light reflecting surface. Other configurations are the same as those of the fourth embodiment.

本実施例１０の構成では、ＬＥＤチップ１２から光透過型ケース１１とは反対側に放出された光を面状の配線２２（光反射面）で光透過型ケース１１側に反射することができ、光取り出し効率を高めることができる。しかも、配線２２と光反射面とを同時に形成でき、生産性を向上できる。更に、配線２２の幅を広くできるため、高精細な印刷方法を使用せずに容易に形成できると共に、配線２２の断線や接続部分の剥がれを防止でき、更には、配線２２の断面積を増加させて導電性を向上できる利点がある。   In the configuration of the tenth embodiment, the light emitted from the LED chip 12 to the side opposite to the light transmissive case 11 can be reflected to the light transmissive case 11 side by the planar wiring 22 (light reflecting surface). The light extraction efficiency can be increased. In addition, the wiring 22 and the light reflecting surface can be formed simultaneously, and productivity can be improved. Furthermore, since the width of the wiring 22 can be widened, it can be easily formed without using a high-definition printing method, the disconnection of the wiring 22 and the peeling of the connection portion can be prevented, and the cross-sectional area of the wiring 22 is increased. Thus, there is an advantage that the conductivity can be improved.

尚、本実施例１０の技術思想を前記実施例３に適用しても良く、図３に示す構造のＬＥＤパッケージ１０において、ＬＥＤチップ１２の周囲に透明な絶縁材２１を充填して該Ｌ
ＥＤチップ１２の側面上端から光透過型ケース１１の内面に向けて傾斜するスロープ状の配線経路（配線下地層）を形成し、このスロープ状の配線経路上に配線２２を印刷又は塗布で形成する際に、配線２２が光反射面を兼ねるように銀ナノインク等により面状に形成しても良い。この場合、ＬＥＤチップ１２の側面からスロープ状の絶縁材２１側に向けて放出された光が面状の配線２２（光反射面）で光透過型ケース１１側に反射されるようになるため、光取り出し効率を向上できる。The technical idea of the tenth embodiment may be applied to the third embodiment. In the LED package 10 having the structure shown in FIG. 3, a transparent insulating material 21 is filled around the LED chip 12 and the L
A slope-like wiring path (wiring base layer) that is inclined from the upper end of the side surface of the ED chip 12 toward the inner surface of the light transmission type case 11 is formed, and the wiring 22 is formed on the slope-shaped wiring path by printing or coating. At this time, the wiring 22 may be formed into a planar shape with silver nano ink or the like so as to serve as a light reflecting surface. In this case, since the light emitted from the side surface of the LED chip 12 toward the slope-shaped insulating material 21 side is reflected by the planar wiring 22 (light reflecting surface) toward the light transmissive case 11 side, The light extraction efficiency can be improved.

前記実施例１０では、面状の配線２２のみで光反射面で形成したが、図１１に示す本発明の実施例１１では、リードフレーム１３が光反射面を兼ねるように該リードフレーム１３を面状に形成すると共に、ＬＥＤチップ１２の電極１４とリードフレーム１３の電極との間を接続する配線２２も光反射面を兼ねるように銀ナノインク等により水平に延びる面状に形成し、面状のリードフレーム１３と面状の配線２２との組み合わせによって光透過型ケース１１の内面側に光反射面を形成する。その他の構成は、前記実施例４と同じである。
In the tenth embodiment, the light reflecting surface is formed by only the planar wiring 22, but in the eleventh embodiment of the present invention shown in FIG. 11, the lead frame 13 is surfaced so that the lead frame 13 also serves as the light reflecting surface. In addition, the wiring 22 connecting the electrode 14 of the LED chip 12 and the electrode of the lead frame 13 is also formed in a planar shape that extends horizontally with silver nano-ink or the like so as to serve also as a light reflecting surface. A light reflection surface is formed on the inner surface side of the light transmission type case 11 by a combination of the lead frame 13 and the planar wiring 22. Other configurations are the same as those of the fourth embodiment.

本実施例１１でも、前記実施例１０と同様の効果を得ることができる。
尚、配線２２は面状に形成せず、リードフレーム１３のみを面状に形成して、面状のリードフレーム１３のみで光反射面を形成するようにしても良い。Also in the eleventh embodiment, the same effect as in the tenth embodiment can be obtained.
The wiring 22 may not be formed in a planar shape, but only the lead frame 13 may be formed in a planar shape, and the light reflecting surface may be formed only by the planar lead frame 13.

また、本実施例１１の技術思想を前記実施例３に適用しても良く、図３に示す構造のＬＥＤパッケージ１０において、リードフレーム１３と配線２２の両方を光反射面を兼ねるように面状に形成しても良い。   Further, the technical idea of the present embodiment 11 may be applied to the embodiment 3, and in the LED package 10 having the structure shown in FIG. 3, the lead frame 13 and the wiring 22 are both planar so as to serve as a light reflecting surface. You may form in.

図１２に示す本発明の実施例１２では、前記実施例１０（図１０）と同様の構造のＬＥＤパッケージ１０において、光反射面となる面状の配線２２の内側（光透過型ケース１１側）に、フレネルレンズ、レンチキュラー、レンズアレイ等のレンズ機能部２８を形成して、光の反射性を向上させるようにしている。レンズ機能部２８は、ＬＥＤパッケージ１０の用途に応じて、広角、集光等の光学特性を変更すれば良い。その他の構成は、前記実施例１０と同じである。   In Example 12 of the present invention shown in FIG. 12, in the LED package 10 having the same structure as that of Example 10 (FIG. 10), the inside of the planar wiring 22 serving as a light reflecting surface (on the light transmitting case 11 side). Further, a lens function unit 28 such as a Fresnel lens, a lenticular lens, or a lens array is formed to improve the light reflectivity. The lens function unit 28 may change optical characteristics such as wide angle and light collection according to the application of the LED package 10. Other configurations are the same as those of the tenth embodiment.

尚、前記実施例１１（図１１）と同様の構造のＬＥＤパッケージ１０において、光反射面となる面状のリードフレーム１３及び面状の配線２２の内側（光透過型ケース１１側）に、フレネルレンズ、レンチキュラー、レンズアレイ等のレンズ機能部を形成して、光の反射性を向上させるようにしても良い。   In the LED package 10 having the same structure as that of the eleventh embodiment (FIG. 11), the Fresnel is formed on the inner side of the planar lead frame 13 and the planar wiring 22 (on the light transmission type case 11 side) as a light reflecting surface. Lens function parts such as lenses, lenticulars, and lens arrays may be formed to improve the light reflectivity.

図１３に示す本発明の実施例１３では、１個又は複数個のＬＥＤパッケージ１０を回路基板２４に表面実装している。図１３の構成例では、ＬＥＤパッケージ１０は、前記実施例３，４，１０〜１２と同様に、印刷又は塗布により配線２２を形成したＬＥＤパッケージ１０を用いている。更に、本実施例１３では、光透過型ケース１１のチップ実装凹部１７がＬＥＤチップ１２の高さ相当の深さの凹部となるように形成され、チップ実装凹部１７内に実装したＬＥＤチップ１２の電極１４がリードフレーム１３の電極と同一高さとなるように構成されている。
In the thirteenth embodiment of the present invention shown in FIG. 13, one or a plurality of LED packages 10 are surface- mounted on a circuit board 24. In the configuration example of FIG. 13, the LED package 10 uses the LED package 10 in which the wiring 22 is formed by printing or coating, as in the third, fourth, and tenth to twelfth embodiments . Furthermore, in the thirteenth embodiment, the chip mounting recess 17 of the light transmission type case 11 is formed to be a recess having a depth corresponding to the height of the LED chip 12, and the LED chip 12 mounted in the chip mounting recess 17 is formed. The electrode 14 is configured to have the same height as the electrode of the lead frame 13.

ＬＥＤパッケージ１０は、光透過型ケース１１を外側（回路基板２４とは反対側）に向け、ＬＥＤチップ１２を回路基板２４側に向けて実装する。実装時に、ＬＥＤパッケージ１０のリードフレーム１３の端子部と回路基板２４のパッド部との間を半田ボール２５等で接続する。   The LED package 10 is mounted with the light transmissive case 11 facing outward (the side opposite to the circuit board 24) and the LED chip 12 facing the circuit board 24. At the time of mounting, the terminal portion of the lead frame 13 of the LED package 10 and the pad portion of the circuit board 24 are connected by solder balls 25 or the like.

ＬＥＤパッケージ１０を回路基板２４に実装した後、ＬＥＤパッケージ１０と回路基板２４との間の隙間に、高熱伝導性絶縁材料３６を充填する。この高熱伝導性絶縁材料３６
は、ＬＥＤチップ１２の電極１４側の面や配線２２等に密着して、ＬＥＤチップ１２や配線２２で発生した熱を回路基板２４へ効率良く伝達する放熱性部材として機能すると共に、ＬＥＤパッケージ１０のＬＥＤチップ１２やその配線２２等を封止する封止材としても機能する。After mounting the LED package 10 on the circuit board 24, the gap between the LED package 10 and the circuit board 24 is filled with the high thermal conductive insulating material 36. This high thermal conductivity insulating material 36
Is closely attached to the surface of the LED chip 12 on the electrode 14 side, the wiring 22 and the like, and functions as a heat radiating member that efficiently transfers the heat generated in the LED chip 12 and the wiring 22 to the circuit board 24, and the LED package 10. It also functions as a sealing material for sealing the LED chip 12 and its wiring 22.

高熱伝導性絶縁材料３６は、光透過型ケース１１よりも熱伝導率が高い絶縁材料で形成され、例えば、高熱伝導性フィラーを混入した高熱伝導性絶縁樹脂、高熱伝導性ペースト材、シリコーングリース等の放熱グリース等を用いれば良い。更に、高熱伝導性絶縁材料３６は、ＬＥＤチップ１２や配線２２に対する密着性や耐熱性に優れた材料が望ましく、更に、ＬＥＤチップ１２や配線２２との間の熱膨張率の差が小さい材料が望ましい。この場合、高熱伝導性絶縁材料３６は、ＬＥＤパッケージ１０の光取り出し側とは反対側に充填するため、透明性は必要とせず、不透明な材料を用いても良い。   The high thermal conductivity insulating material 36 is formed of an insulating material having a higher thermal conductivity than that of the light transmission type case 11, for example, a high thermal conductivity insulating resin mixed with a high thermal conductivity filler, a high thermal conductivity paste material, silicone grease, or the like. May be used. Further, the high thermal conductive insulating material 36 is desirably a material having excellent adhesion and heat resistance to the LED chip 12 and the wiring 22, and further a material having a small difference in thermal expansion coefficient between the LED chip 12 and the wiring 22. desirable. In this case, since the high thermal conductivity insulating material 36 is filled on the side opposite to the light extraction side of the LED package 10, transparency is not required and an opaque material may be used.

以上説明した本実施例１３では、ＬＥＤパッケージ１０と回路基板２４との間の隙間に高熱伝導性絶縁材料３６を充填するようにしたので、ＬＥＤチップ１２や配線２２で発生した熱を高熱伝導性絶縁材料３６を介して回路基板２４へ効率良く伝達して放熱させることができ、ＬＥＤチップ１２や配線２２の温度上昇を抑制して発光量を増やすことができる。   In the thirteenth embodiment described above, the gap between the LED package 10 and the circuit board 24 is filled with the high thermal conductivity insulating material 36, so that the heat generated in the LED chip 12 and the wiring 22 is highly thermally conductive. Heat can be efficiently transmitted to the circuit board 24 through the insulating material 36 to dissipate heat, and the temperature rise of the LED chip 12 and the wiring 22 can be suppressed to increase the amount of light emission.

尚、本実施例１３では、ＬＥＤパッケージ１０を回路基板２４に実装した後、両者間の隙間に高熱伝導性絶縁材料３６を充填するようにしたが、高熱伝導性絶縁材料３６として放熱シートを用いて、ＬＥＤパッケージ１０を回路基板２４に実装する前に、ＬＥＤパッケージ１０又は回路基板２４に放熱シートを貼り付けた後、ＬＥＤパッケージ１０を回路基板２４に実装して、ＬＥＤパッケージ１０と回路基板２４との間に放熱シートを挟み込むようにしても良い。   In Example 13, after the LED package 10 was mounted on the circuit board 24, the gap between them was filled with the high thermal conductive insulating material 36. However, a heat radiating sheet was used as the high thermal conductive insulating material 36. Before the LED package 10 is mounted on the circuit board 24, a heat dissipation sheet is attached to the LED package 10 or the circuit board 24, and then the LED package 10 is mounted on the circuit board 24. A heat dissipation sheet may be sandwiched between the two.

図１４に示す本発明の実施例１４では、光透過型ケース１１を成形する際に、放熱性部材である放熱リード３７をリードフレーム１３と共にインサート成形して、光透過型ケース１１に放熱リード３７をその一部が外方に突出するように埋設し、この放熱リード３７のうちの外方に突出する部分に放熱板３８を取り付けている。   In the fourteenth embodiment of the present invention shown in FIG. 14, when the light transmissive case 11 is formed, the heat radiating lead 37, which is a heat radiating member, is insert-molded together with the lead frame 13, so that the light transmissive case 11 has the heat radiating lead 37. Are embedded so that a part thereof protrudes outward, and a heat dissipation plate 38 is attached to a portion of the heat dissipation lead 37 protruding outward.

放熱リード３７は、光透過型ケース１１の内部のうちのＬＥＤチップ１２の光をできるだけ遮断しない位置で、且つ、熱の発生源であるＬＥＤチップ１２や配線２２に対する絶縁性を確保できる範囲内で、これらにできるだけ近い位置に埋設されている。放熱リード３７は、ＬＥＤパッケージ１０と回路基板２４との組立体を被取付部位に取り付ける取付部材としても利用できるように構成されている。放熱リード３７は、どのような形状であっても良く、例えば、帯板状、プレート状であっても良く、表面積（伝熱面積）が広い方が放熱効果は高い。その他の構成は、前記実施例１３と同じである。   The heat dissipating lead 37 is in a position where the light of the LED chip 12 is not blocked as much as possible in the light transmissive case 11 and within a range in which insulation with respect to the LED chip 12 and the wiring 22 which are heat generation sources can be secured. These are buried as close to these as possible. The heat radiation lead 37 is configured to be used as an attachment member for attaching the assembly of the LED package 10 and the circuit board 24 to the attachment site. The heat radiating lead 37 may have any shape, for example, a band plate shape or a plate shape, and the heat radiation effect is higher when the surface area (heat transfer area) is wider. Other configurations are the same as those of the thirteenth embodiment.

本実施例１４では、ＬＥＤチップ１２に電流を流す電気経路をリードフレーム１３と配線２２とから構成し、ＬＥＤチップ１２や配線２２で発生した熱を外部に放散する放熱経路を放熱リード３７と放熱板３８とから構成しているため、電気経路と放熱経路とを分離することができ、効率良く放熱することができる。   In the fourteenth embodiment, an electric path for supplying current to the LED chip 12 is constituted by the lead frame 13 and the wiring 22, and a heat dissipation path for radiating heat generated in the LED chip 12 and the wiring 22 to the outside is provided as the heat dissipation lead 37 and the heat dissipation. Since it is comprised from the board 38, an electrical path and a thermal radiation path | route can be isolate | separated and it can thermally radiate efficiently.

更に、放熱リード３７に取り付けた放熱板３８を、ＬＥＤパッケージ１０と回路基板２４との組立体を被取付部位に取り付ける取付部材として使用すれば、該組立体の荷重を放熱板３８で支えることができ、配線２２の接続部に生じる応力を小さくすることができて、接続部の断線問題を回避することができる。   Further, if the heat radiation plate 38 attached to the heat radiation lead 37 is used as an attachment member for attaching the assembly of the LED package 10 and the circuit board 24 to the attachment site, the heat radiation plate 38 can support the load of the assembly. In addition, the stress generated in the connection portion of the wiring 22 can be reduced, and the disconnection problem of the connection portion can be avoided.

［その他の実施例］
前記各実施例１〜１４では、いずれも１つの光透過型ケース１１に１つのＬＥＤチップ１２を実装したが、１つの光透過型ケース１１に複数のＬＥＤチップ１２を実装するようにしても良い。[Other Examples]
In each of Examples 1 to 14, one LED chip 12 is mounted on one light transmissive case 11, but a plurality of LED chips 12 may be mounted on one light transmissive case 11. .

１０…ＬＥＤパッケージ、１１…光透過型ケース、１２…ＬＥＤチップ、１３…リードフレーム、１４…電極、１５…ボンディングワイヤ、１７…チップ実装凹部、２１…絶縁材、２２…配線、２４…回路基板、２５…半田ボール、２６…封止材、２８…レンズ機能部、３１…光反射防止処理、３２…蛍光体、３３…蛍光体層、３６…高熱伝導性絶縁材料（放熱性部材）、３７…放熱リード（放熱性部材）、３８…放熱板   DESCRIPTION OF SYMBOLS 10 ... LED package, 11 ... Light transmission type case, 12 ... LED chip, 13 ... Lead frame, 14 ... Electrode, 15 ... Bonding wire, 17 ... Chip mounting recessed part, 21 ... Insulating material, 22 ... Wiring, 24 ... Circuit board 25 ... solder balls, 26 ... sealing material, 28 ... lens function part, 31 ... light reflection preventing treatment, 32 ... phosphor, 33 ... phosphor layer, 36 ... high thermal conductive insulating material (heat dissipation member), 37 ... Heat dissipation lead (heat dissipation member), 38 ... Heat dissipation plate

Claims (8)

一方の面に電極が形成されたＬＥＤチップと、該ＬＥＤチップの光を外方に取り出す光透過型ケースとを備え、回路基板に表面実装するＬＥＤパッケージにおいて、
前記光透過型ケースのうちの光取り出し側とは反対側の面には、水平に延びる電極を有するリードフレームが設けられていると共に、前記ＬＥＤチップを実装するためのチップ実装凹部が前記ＬＥＤチップの高さ相当の深さの凹部となるように形成され、
前記ＬＥＤチップは、前記電極が形成された面と反対側の面を発光面とするフリップチップ型のＬＥＤチップであり、前記電極が形成された面を前記光透過型ケースの光取り出し側とは反対側に向けて該光透過型ケースの前記チップ実装凹部内に実装されて、該ＬＥＤチップの電極が前記リードフレームの電極と同一高さとなり、
前記チップ実装凹部内のうちの前記ＬＥＤチップの周囲には、絶縁材が充填されて該ＬＥＤチップの電極と前記リードフレームの電極との間の配線経路が水平に延びるように形成されて平坦化され、
前記ＬＥＤチップの電極と前記リードフレームの電極との間を接続する配線のパターンが前記配線経路上に導電性インクで水平に延びる線状又は帯状又は面状に形成され、
前記光透過型ケースのうちの光取り出し側とは反対側に、放熱性部材が設けられ、
前記放熱性部材は、高熱伝導性絶縁材料で形成されて前記ＬＥＤチップの電極側の面及び前記配線に密着して、前記ＬＥＤチップ及び前記配線で発生した熱を前記回路基板へ伝達して放熱させると共に、前記ＬＥＤチップ及び前記配線を封止する封止材としても機能することを特徴とするＬＥＤパッケージ。 In an LED package that includes an LED chip having an electrode formed on one surface and a light transmission type case that takes out the light of the LED chip to the outside, and is surface-mounted on a circuit board ,
A lead frame having a horizontally extending electrode is provided on a surface of the light transmission type case opposite to the light extraction side, and a chip mounting recess for mounting the LED chip is provided on the LED chip. Formed to be a recess having a depth equivalent to the height of
The LED chip is a flip chip type LED chip having a light emitting surface on the surface opposite to the surface on which the electrode is formed, and the surface on which the electrode is formed is the light extraction side of the light transmissive case Mounted in the chip mounting recess of the light transmission type case toward the opposite side, the electrode of the LED chip is the same height as the electrode of the lead frame,
The periphery of the LED chip in the chip mounting recess is filled with an insulating material so that a wiring path between the electrode of the LED chip and the electrode of the lead frame extends horizontally to be flattened. And
A wiring pattern that connects between the electrode of the LED chip and the electrode of the lead frame is formed in a linear shape, a strip shape, or a planar shape that extends horizontally with conductive ink on the wiring path ,
A heat radiating member is provided on the side opposite to the light extraction side of the light transmission type case,
The heat dissipating member is formed of a high thermal conductive insulating material and is in close contact with the electrode side surface of the LED chip and the wiring, and transmits heat generated by the LED chip and the wiring to the circuit board to dissipate heat. And an LED package that functions as a sealing material for sealing the LED chip and the wiring . 前記光透過型ケースは、レンズとして機能するように形成されていることを特徴とする請求項１に記載のＬＥＤパッケージ。   The LED package according to claim 1, wherein the light transmissive case is formed to function as a lens. 前記光透過型ケースのうちの光取り出し側とは反対側に、前記ＬＥＤチップの光を反射する光反射面が前記ＬＥＤチップの周囲を取り巻くように形成されていることを特徴とする請求項１又は２に記載のＬＥＤパッケージ。   2. A light reflecting surface that reflects light of the LED chip is formed on the opposite side of the light transmission type case to the light extraction side so as to surround the LED chip. Or the LED package of 2. 前記配線は、光反射面を兼ねるように面状に形成されていることを特徴とする請求項１乃至３のいずれかに記載のＬＥＤパッケージ。 The wires, LED package according to any one of claims 1 to 3, characterized in that it is formed in a planar shape so as to also serve as a light reflecting surface. 前記光透過型ケースのうちの光取り出し側とは反対側の面に、光反射防止処理が施されていることを特徴とする請求項１乃至４のいずれかに記載のＬＥＤパッケージ。 The LED package according to any one of claims 1 to 4 to the light extraction side on the opposite side, and a light reflection preventing treatment is performed of the light transmission type case. 前記光透過型ケースは、放出する光の特性を変化させる蛍光体が混入された材料で形成されていることを特徴とする請求項１乃至５のいずれかに記載のＬＥＤパッケージ。 The light transmissive case, LED package according to any one of claims 1 to 5, characterized in that the phosphor to change the characteristics of the emitted light is formed by being mixed material. 前記光透過型ケースのうちの光取り出し側とは反対側の面に、放出する光の特性を変化させる蛍光体層が形成されていることを特徴とする請求項１乃至６のいずれかに記載のＬＥＤパッケージ。 On the side opposite to the light extraction side of the light transmissive case, according to any one of claims 1 to 6, wherein the phosphor layer to change the characteristics of the emitted light is formed LED package. 請求項１に記載のＬＥＤパッケージを製造するＬＥＤパッケージの製造方法において、 前記ＬＥＤチップの電極が形成された面を前記光透過型ケースとは反対側に向けて該ＬＥＤチップを該光透過型ケースのチップ実装凹部内に実装する実装工程と、
前記チップ実装凹部内のうちの前記ＬＥＤチップの周囲に絶縁材を充填して前記ＬＥＤチップの電極と前記リードフレームの電極との間の配線経路を水平に延びるように形成して平坦化する絶縁材充填工程と、
前記ＬＥＤチップの電極と前記リードフレームの電極とを接続する配線のパターンを前記配線経路上に導電性インクで水平に延びる線状又は帯状又は面状に形成する配線工程と、
前記光透過型ケースのうちの光取り出し側とは反対側に、前記ＬＥＤチップ及び前記配線で発生した熱を前記回路基板へ伝達して放熱させる放熱性部材として、高熱伝導性絶縁材料を前記ＬＥＤチップの電極側の面及び前記配線に密着させて前記ＬＥＤチップ及び前記配線を封止する封止材としても機能するように設ける工程と
を含むことを特徴とするＬＥＤパッケージの製造方法。 2. The LED package manufacturing method for manufacturing the LED package according to claim 1, wherein the LED chip is directed to the opposite side of the light transmissive case with the surface on which the electrode of the LED chip is formed. Mounting process for mounting in the chip mounting recess of
An insulating material that fills an insulating material around the LED chip in the chip mounting recess and forms a wiring path between the electrode of the LED chip and the electrode of the lead frame so as to extend horizontally, and is flattened. Material filling process;
A wiring step of forming the LED chip electrode and the extending horizontally conductive ink patterns of the wiring connecting the lead frame electrode on the wiring path linear or band or surface,
On the opposite side to the light extraction side of the light transmission type case, a high heat conductive insulating material is used as a heat radiating member for transferring the heat generated by the LED chip and the wiring to the circuit board to dissipate the heat. A method of manufacturing an LED package, comprising: a step of providing a sealing material for sealing the LED chip and the wiring by contacting the surface on the electrode side of the chip and the wiring .
JP2014507043A 2012-03-26 2012-03-26 LED package and manufacturing method thereof Active JP6029188B2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2012/057702 WO2013145071A1 (en) 2012-03-26 2012-03-26 Led package and manufacturing method for same

Publications (2)

Publication Number Publication Date
JPWO2013145071A1 JPWO2013145071A1 (en) 2015-08-03
JP6029188B2 true JP6029188B2 (en) 2016-11-24

Family

ID=49258441

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014507043A Active JP6029188B2 (en) 2012-03-26 2012-03-26 LED package and manufacturing method thereof

Country Status (2)

Country Link
JP (1) JP6029188B2 (en)
WO (1) WO2013145071A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10720382B2 (en) 2017-11-29 2020-07-21 Samsung Electronics Co., Ltd. Semiconductor package structure and semiconductor module including the same

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015126137A (en) * 2013-12-26 2015-07-06 アピックヤマダ株式会社 Lead frame, led package substrate, reflector component, led package, light emitting device, light emission system, and manufacturing methods of led package substrate and led package
TW201628217A (en) * 2015-01-30 2016-08-01 聯京光電股份有限公司 Improved packaging method for light emitting diode devices and structure thereof
CN105161436B (en) * 2015-09-11 2018-05-22 柯全 The method for packing of flip-chip
DE102016100563B4 (en) * 2016-01-14 2021-08-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Method for producing an optoelectronic lighting device and optoelectronic lighting device
JP6955135B2 (en) * 2016-10-19 2021-10-27 日亜化学工業株式会社 Light emitting device and its manufacturing method
JP6834469B2 (en) * 2016-12-27 2021-02-24 日亜化学工業株式会社 Light emitting device and its manufacturing method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3357756B2 (en) * 1994-10-14 2002-12-16 株式会社シチズン電子 Surface mount type light emitting device
JP3992770B2 (en) * 1996-11-22 2007-10-17 日亜化学工業株式会社 Light emitting device and method for forming the same
CN1196203C (en) * 1999-07-29 2005-04-06 西铁城电子股份有限公司 Light-emitting diode
JP2005159045A (en) * 2003-11-26 2005-06-16 Sumitomo Electric Ind Ltd Semiconductor light emitting element mounting member and light emitting diode using the same
JP2009194108A (en) * 2008-02-13 2009-08-27 Seiko Instruments Inc Semiconductor light-emitting element, manufacturing method thereof and illumination apparatus
JP5590711B2 (en) * 2010-05-14 2014-09-17 富士機械製造株式会社 Light emitting element mounting method and light emitting element mounting structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10720382B2 (en) 2017-11-29 2020-07-21 Samsung Electronics Co., Ltd. Semiconductor package structure and semiconductor module including the same
US11848255B2 (en) 2017-11-29 2023-12-19 Samsung Electronics Co., Ltd. Semiconductor package structure on a PCB and semiconductor module including the same

Also Published As

Publication number Publication date
JPWO2013145071A1 (en) 2015-08-03
WO2013145071A1 (en) 2013-10-03

Similar Documents

Publication Publication Date Title
JP6029188B2 (en) LED package and manufacturing method thereof
US8471287B2 (en) LED package and method for making the same
US8866376B2 (en) Light emitting device package and manufacturing method thereof
US8399267B2 (en) Methods for packaging light emitting devices and related microelectronic devices
JP5819414B2 (en) Surface mountable optoelectronic component and method for manufacturing surface mountable optoelectronic component
CN105144416B (en) Lighting apparatus with opto-electronic device
KR100863612B1 (en) Light emitting device
WO2012050110A1 (en) Led module
EP2490259B1 (en) Light-Emitting Device Package and Method of Manufacturing the Same
JP4914998B1 (en) LED module device and manufacturing method thereof
CN102160197A (en) Optoelectronic device submount
KR20120084554A (en) Light emitting device package and method of manufacturing the light emitting device package
KR20100030389A (en) Led packagee of com type, led module using the same and method of manufacturing thereof
EP3078063B1 (en) Mounting assembly and lighting device
US20140159075A1 (en) Light-emitting device package and method of manufacturing the same
US8049244B2 (en) Package substrate and light emitting device using the same
KR20130051206A (en) Light emitting module
JP5936885B2 (en) Semiconductor light emitting device
KR101452857B1 (en) Light emitting device package and method for manufacturing the same
TWI479701B (en) Light emitting diode
KR101241447B1 (en) Lighting emitting diode package and Method for manufacturing the same
JP5296266B2 (en) Light emitting device
KR20120104762A (en) Light emitting device module and manufacturing method thereof
KR101722117B1 (en) Method of manufacturing semiconductor light emitting device
TWI568038B (en) Composite Substrate For Light Emitting Device And LED Module With The Same

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20151201

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160108

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160226

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160414

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20160701

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160901

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20160908

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20161013

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20161013

R150 Certificate of patent or registration of utility model

Ref document number: 6029188

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250