JP6016475B2 - Electron emitter - Google Patents
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- JP6016475B2 JP6016475B2 JP2012144085A JP2012144085A JP6016475B2 JP 6016475 B2 JP6016475 B2 JP 6016475B2 JP 2012144085 A JP2012144085 A JP 2012144085A JP 2012144085 A JP2012144085 A JP 2012144085A JP 6016475 B2 JP6016475 B2 JP 6016475B2
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- 239000010419 fine particle Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 23
- 229920005989 resin Polymers 0.000 claims description 21
- 239000011347 resin Substances 0.000 claims description 21
- 229920002050 silicone resin Polymers 0.000 claims description 10
- 239000010408 film Substances 0.000 description 30
- 239000012212 insulator Substances 0.000 description 12
- 239000002184 metal Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 239000006185 dispersion Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000002105 nanoparticle Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001227 electron beam curing Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000001954 sterilising effect Effects 0.000 description 2
- 238000004659 sterilization and disinfection Methods 0.000 description 2
- 229910002710 Au-Pd Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000012643 polycondensation polymerization Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/026—Eliminating deleterious effects due to thermal effects, electric or magnetic field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
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- Cold Cathode And The Manufacture (AREA)
Description
本発明は、電圧を印加することにより電子を放出する電子放出素子に関する。 The present invention relates to an electron emission element for emitting electrons by application of a voltage.
従来の電子放出素子として、ＭＩＭ（Metal Insulator Metal）型やＭＩＳ（Metal Insulator Semiconductor）型の電子放出素子が開発されている。これらは、素子内部の量子サイズ効果および強電界を利用して電子を加速し、平面状の素子表面から電子を放出させる面放出型の電子放出素子である。これらの電子放出素子は、素子外部に強電界を必要とせず、素子内部の電子加速層で電子を加速させるので、陽イオンやオゾンを発生させずに電子を放出することができる。 As conventional electron-emitting devices, MIM (Metal Insulator Metal) type and MIS (Metal Insulator Semiconductor) type electron-emitting devices have been developed. These are surface-emission electron-emitting devices that accelerate electrons using the quantum size effect and strong electric field inside the device to emit electrons from the planar device surface. Since these electron-emitting devices do not require a strong electric field outside the device and accelerate electrons in the electron acceleration layer inside the device, they can emit electrons without generating cations or ozone.
ＭＩＭ型の電子放出素子として、例えば、特許文献１を挙げることができる。図７（ａ）、（ｂ）に、特許文献１の電子放出素子の断面図と平面図を示す。特許文献１の電子放出素子は、ガラス等の絶縁基板６１と、電圧印加用の２枚の電極６２、６４と、該電極間に無機絶縁体膜６７を有し、電極６２と電極６４が重なる部分で電子放出部６９を形成している。そして、電子加速層として機能する無機絶縁体膜６７が、導電性微粒子６８（Ａｕ微粒子）を含有するＳｉＯ２液体コーティング剤で形成されていることを特徴としている。 For example, Patent Document 1 can be cited as an MIM type electron-emitting device. 7A and 7B are a cross-sectional view and a plan view of the electron-emitting device disclosed in Patent Document 1. FIG. The electron-emitting device of Patent Document 1 includes an insulating substrate 61 such as glass, two electrodes 62 and 64 for voltage application, and an inorganic insulator film 67 between the electrodes, and the electrode 62 and the electrode 64 overlap. The electron emission part 69 is formed by the part. The inorganic insulator film 67 that functions as an electron acceleration layer is formed of a SiO 2 liquid coating agent containing conductive fine particles 68 (Au fine particles).
特許文献１の電子放出素子によれば、無機絶縁体膜６７が導電性微粒子６８を含むことにより、比較的厚い無機絶縁体膜６７でも電子放出が可能となり、絶縁耐圧の高い電子放出素子を実現することができる。 According to the electron-emitting device of Patent Document 1, since the inorganic insulator film 67 includes the conductive fine particles 68, electrons can be emitted even with a relatively thick inorganic insulator film 67, and an electron-emitting device having a high withstand voltage is realized. can do.
しかしながら、特許文献１の電子放出素子は、導電性微粒子６８が分散した無機絶縁体膜６７を形成する際に、ＳｉＯ２液体コーティング剤を４００℃の高温で焼成する必要があり、絶縁基板６１となるガラスやセラミック、電極６２となる金属材料、無機絶縁体膜６７のそれぞれが異なる熱膨張率の組み合わせを４００℃の高温で焼成すると、電極６２や絶縁体膜６７の剥離や亀裂が生じる場合があった。電極６２や無機絶縁体膜６７に剥離や亀裂が生じると、剥離や亀裂による部分的な欠損によって電子放出点の不均一化が生じたり、素子自体の破壊につながる。 However, the electron-emitting device disclosed in Patent Document 1 needs to bake a SiO 2 liquid coating agent at a high temperature of 400 ° C. when forming the inorganic insulator film 67 in which the conductive fine particles 68 are dispersed. When a combination of different thermal expansion coefficients of the glass or ceramic to be formed, the metal material to be the electrode 62, and the inorganic insulator film 67 is fired at a high temperature of 400 ° C., the electrode 62 or the insulator film 67 may be peeled off or cracked. there were. When peeling or cracking occurs in the electrode 62 or the inorganic insulating film 67, the electron emission point becomes non-uniform due to partial defects due to peeling or cracking, or the element itself is destroyed.
また、特許文献１の絶縁基板６１と電極６２の代りに金属基板を用いることも可能であるが、この場合でも上記と同様に熱膨張率の違いから絶縁性膜６７に亀裂や膜の剥離が発生する。この金属基板を薄膜化した場合は、金属基板と無機絶縁体膜６７の密着力により、金属基板に反りが発生する場合もある。 In addition, it is possible to use a metal substrate instead of the insulating substrate 61 and the electrode 62 of Patent Document 1, but in this case as well, cracks and film peeling occur in the insulating film 67 due to the difference in thermal expansion coefficient as described above. Occur. When this metal substrate is thinned, the metal substrate may be warped due to the adhesion between the metal substrate and the inorganic insulator film 67.
以上のように、高温加熱により無機絶縁体膜を形成する場合は、熱膨張率の違いによる剥離や亀裂、反り等を生じさせないように、加熱温度や基板材料、絶縁体膜の材料選定、膜厚に制限が生じる。 As described above, when an inorganic insulator film is formed by high-temperature heating, the heating temperature, the substrate material, the material selection of the insulator film, the film should be selected so as not to cause peeling, cracking, warping, etc. due to the difference in thermal expansion coefficient. There is a limit to the thickness.
本発明は、このような事情に鑑みてなされたものであり、加熱による薄膜の剥離や亀裂、または金属基板の反りが生じることなく、大気圧および真空中でも安定した電子放出が可能な電子放出素子を提供するものである。 The present invention has been made in view of such circumstances, and an electron-emitting device capable of stable electron emission even under atmospheric pressure and vacuum without causing peeling or cracking of a thin film or warping of a metal substrate due to heating. Is to provide.
上記の課題を解決するため、第１電極と、第１電極の層面と対向して配置された第２電極と、第１電極と第２電極の間の中間層とを有し、第１電極と第２電極の間に電圧を印可することにより、第２電極から電子を放出させる電子放出素子であって、中間層は、導電性微粒子を含んだ樹脂であり、絶縁性微粒子を含まないことを特徴とする。 In order to solve the above-described problem, the first electrode includes a first electrode, a second electrode disposed to face the layer surface of the first electrode, and an intermediate layer between the first electrode and the second electrode. If by applying a voltage between the second electrode, an electron-emitting device to emit the second electrode or et electron, the intermediate layer is a resin containing conductive particles, include the insulating particles It is characterized by not .
本発明に係る電子放出素子では、樹脂は、シリコーン樹脂である構成としてもよい。In the electron-emitting device according to the present invention, the resin may be a silicone resin.
本発明に係る電子放出素子では、第１電極は、可撓性基板上に形成されている構成としてもよい。In the electron-emitting device according to the present invention, the first electrode may be formed on a flexible substrate.
本発明の電子放出素子によれば、基板と樹脂、電極に熱応力による亀裂や剥離が生じない電子放出素子を得ることができる。 According to the electron-emitting device of the present invention, it is possible to obtain an electron-emitting device in which cracks and peeling due to thermal stress do not occur in the substrate, resin, and electrode.
本発明の一実施形態について図１に基づいて説明すると以下の通りである。なお、以下に記述する構成は、本発明の具体的な一例に過ぎず、本発明はこれに限定されるものではない。 An embodiment of the present invention will be described with reference to FIG. The configuration described below is merely a specific example of the present invention, and the present invention is not limited to this.
図１は、本発明の一実施形態における電子放出素子１０と、電子放出素子１０を用いた電子放出装置２０の構成を示す断面図である。本発明の電子放出素子１０は、対向して配置される第１電極１と、第２電極２とを有し、第１電極１と第２電極２との間に中間層３を備えている。そして、中間層３が導電性微粒子５を含んだ樹脂４であることを特徴としている。 FIG. 1 is a cross-sectional view showing a configuration of an electron-emitting device 10 and an electron-emitting device 20 using the electron-emitting device 10 according to an embodiment of the present invention. An electron-emitting device 10 according to the present invention includes a first electrode 1 and a second electrode 2 that are arranged to face each other, and includes an intermediate layer 3 between the first electrode 1 and the second electrode 2. . The intermediate layer 3 is a resin 4 containing conductive fine particles 5.
本発明の電子放出素子１０によれば、中間層３が導電性微粒子５を含んだ樹脂４であるため、高温での焼成工程を得ずに中間層３を形成することができ、熱膨張率の異なる中間層３や第１電極１に大きな体積変化を生じさせることがないため、第１電極１に反りを生じさせたり、中間層３の剥離や亀裂が生じることを防止できる。このため、中間層３や第２電極２の剥離による部分的な欠損を抑制し、均一な電子放出性能をもつ電子放出素子を得ることができる。 According to the electron-emitting device 10 of the present invention, since the intermediate layer 3 is the resin 4 including the conductive fine particles 5, the intermediate layer 3 can be formed without obtaining a baking process at a high temperature, and the thermal expansion coefficient. Therefore, it is possible to prevent the first electrode 1 from being warped, and the intermediate layer 3 from being peeled off or cracked. For this reason, the partial defect | deletion by peeling of the intermediate | middle layer 3 or the 2nd electrode 2 can be suppressed, and the electron-emitting element which has uniform electron emission performance can be obtained.
また、本発明の電子放出装置２０は、上記の電子放出素子１０と、第１電極１と第２電極２との間に電圧を印可する第１電源８Ａを備えている。電子放出装置２０は、第１電源８Ａにより、第１電極１と第２電極２との間に適度な電圧Ｖ１を印可することにより、該電極間で電子を加速させて第２電極２の表面から電子を放出するものである。
また、本発明の中間層３は絶縁性微粒子が含まれていない。絶縁性微粒子が含まれた場合、一般に絶縁性微粒子の粒子径が小さくなるほど絶縁性微粒子の凝集が発生しやすくなるため、絶縁性微粒子の分散状態により中間層の膜厚が不均一になる場合がある。電子放出量は印加電圧Ｖ１により形成される中間層３内部の電界強度が強いほど増加するため、中間層３の膜厚が均一なほど電界強度が均一にかかり、面方向での均一な電子放出を可能とする。本発明の電子放出素子１０によれば、絶縁性微粒子による膜厚の不均一が発生しないため、面方向での均一な電子放出が可能となる。
In addition, the electron emission device 20 of the present invention includes the above-described electron emission element 10 and a first power source 8 </ b> A that applies a voltage between the first electrode 1 and the second electrode 2. The electron emission device 20 applies an appropriate voltage V1 between the first electrode 1 and the second electrode 2 by the first power supply 8A, thereby accelerating the electrons between the electrodes, thereby accelerating the surface of the second electrode 2. Emits electrons.
Further, the intermediate layer 3 of the present invention does not contain insulating fine particles. When insulating fine particles are included, the smaller the particle diameter of the insulating fine particles, the easier the aggregation of the insulating fine particles occurs. Therefore, the thickness of the intermediate layer may become non-uniform depending on the dispersion state of the insulating fine particles. is there. The amount of electron emission increases as the electric field strength inside the intermediate layer 3 formed by the applied voltage V1 increases. Therefore, the electric field strength is more uniform as the film thickness of the intermediate layer 3 is more uniform, and uniform electron emission in the plane direction. Is possible. According to the electron-emitting device 10 of the present invention, since the non-uniformity of the film thickness due to the insulating fine particles does not occur, uniform electron emission in the surface direction is possible.
本発明により作製した電子放出素子１０は、真空中および大気圧中でも安定して駆動が可能であることが確認されている。電子放出素子１０を大気中で駆動させることにより、第２電極２の表面から放出される電子で大気中の分子をイオン化できるため、イオン発生装置としてイオン風冷却装置や粒子の帯電装置などに用いることができる。 It has been confirmed that the electron-emitting device 10 manufactured according to the present invention can be driven stably in vacuum and at atmospheric pressure. By driving the electron-emitting device 10 in the atmosphere, molecules in the atmosphere can be ionized by electrons emitted from the surface of the second electrode 2, so that the ion-emitting device 10 is used as an ion wind cooling device or a particle charging device. be able to.
また、真空中では、大気圧中と異なり電子放出素子１０より発生した電子を電子放出素子１０と対向するように配置した第３対向電極７０により加速させることが可能となる。これにより電子放出素子１０の第３電極７０側に蛍光体層を配置した場合、第２電極２から放出される電子を蛍光体層に照射することにより、蛍光体層を発光させることができるので、自発光装置として用いることもできる。その他にも電子線源として殺菌や滅菌、ＥＢ硬化、ＳＥＭなどの分析装置などに用いることができる。 Further, in vacuum, unlike in atmospheric pressure, electrons generated from the electron-emitting device 10 can be accelerated by the third counter electrode 70 disposed so as to face the electron-emitting device 10. Thereby, when the phosphor layer is arranged on the third electrode 70 side of the electron-emitting device 10, the phosphor layer can emit light by irradiating the phosphor layer with electrons emitted from the second electrode 2. It can also be used as a self-luminous device. In addition, it can be used as an electron beam source for sterilization, sterilization, EB curing, SEM and other analyzers.
＜実施例１＞
図２は、実施例１の電子放出素子１１を示す断面図であり、図３は、電子放出素子１１の平面図である。実施例１の電子放出素子１１は、第１電極１と、第１電極１の上に形成された絶縁膜６と、中間層３と、第２電極２とを備えている。
<Example 1>
FIG. 2 is a cross-sectional view illustrating the electron-emitting device 11 according to the first embodiment, and FIG. 3 is a plan view of the electron-emitting device 11. The electron-emitting device 11 of Example 1 includes a first electrode 1, an insulating film 6 formed on the first electrode 1, an intermediate layer 3, and a second electrode 2.
第１電極１は、基板の機能を兼ねる電極基板であり、導電性を有する板状体で構成されている。例えば、第１電極１として、２３ｍｍ角のＳＵＳ基板を用いることができる。また、第１電極１は、セラミックやガラスなどの絶縁性基板上に導電性薄膜を形成したものを用いることもできる。 The first electrode 1 is an electrode substrate that also functions as a substrate, and is composed of a conductive plate-like body. For example, a 23 mm square SUS substrate can be used as the first electrode 1. Further, the first electrode 1 may be formed by forming a conductive thin film on an insulating substrate such as ceramic or glass.
第１電極１の上に形成される絶縁膜６は、第１電極１が部分的に露出されるような開口部を有している。本発明の電子放出素子１１において、絶縁膜６が必須とされるものではないが、このような絶縁膜６を設けることにより、中間層３を介して第１電極１と第２電極２が重なって形成される電子放出部７（電子が放出される領域）を規定することができる。実施例１の電子放出素子１１では、５ｍｍ角の矩形状の開口部を有する絶縁膜６を用いている。 The insulating film 6 formed on the first electrode 1 has an opening so that the first electrode 1 is partially exposed. In the electron-emitting device 11 of the present invention, the insulating film 6 is not essential, but by providing such an insulating film 6, the first electrode 1 and the second electrode 2 overlap with each other through the intermediate layer 3. Thus, the electron emission portion 7 (region from which electrons are emitted) formed can be defined. In the electron-emitting device 11 of Example 1, the insulating film 6 having a rectangular opening of 5 mm square is used.
次に、電子放出素子１１の特徴部となる中間層３について説明する。中間層３は、図１に示した実施形態と同様に、主体となる樹脂４と、樹脂４中に分散された導電性微粒子５を含んでいる。樹脂４は、絶縁性の樹脂材料であり、例えば、シラノール(R3Si-OH)を縮合重合したシリコーン樹脂を用いることができる。また、導電性微粒子５は、金属や半導電体など導電性材料を用いることが可能である。例えば、金、銀、白金、パラジウム等の導電性を有する金属微粒子を用いることができる。樹脂４に添加する導電性微粒子５の含有量を変えることにより、中間層３の抵抗値を調整することができる。 Next, the intermediate layer 3 that is a characteristic part of the electron-emitting device 11 will be described. As in the embodiment shown in FIG. 1, the intermediate layer 3 includes a main resin 4 and conductive fine particles 5 dispersed in the resin 4. The resin 4 is an insulating resin material, and for example, a silicone resin obtained by condensation polymerization of silanol (R3Si—OH) can be used. The conductive fine particles 5 can be made of a conductive material such as a metal or a semiconductor. For example, metal fine particles having conductivity such as gold, silver, platinum, and palladium can be used. The resistance value of the intermediate layer 3 can be adjusted by changing the content of the conductive fine particles 5 added to the resin 4.
中間層３は、樹脂４と導電性微粒子５を混合した分散液を用い、スピンコート法、ドクターブレード法、スプレー法、ディッピング法等により塗布することができる。上記の分散液は、試薬瓶へ樹脂４としてシリコーン樹脂（室温硬化性、東レ・ダウコーニング株式会社製）を入れ、これに導電性微粒子５としてＡｇナノ粒子（平均径１０ｎｍ、絶縁被覆アルコラート１ｎｍ膜、株式会社応用ナノ粒子研究所製）を混合し、さらに上記混合液が入った試薬瓶を超音波振動器にかけて作製した。 The intermediate layer 3 can be applied by a spin coating method, a doctor blade method, a spray method, a dipping method, or the like, using a dispersion liquid in which the resin 4 and the conductive fine particles 5 are mixed. In the above dispersion, a silicone resin (room temperature curable, manufactured by Toray Dow Corning Co., Ltd.) is placed as a resin 4 in a reagent bottle, and Ag nanoparticles (average diameter 10 nm, insulating coating alcoholate 1 nm film) as conductive fine particles 5 , Manufactured by Applied Nanoparticles Laboratories Co., Ltd.), and a reagent bottle containing the above mixed solution was prepared using an ultrasonic vibrator.
なお、樹脂４と導電性微粒子５の分散液の割合は、シリコーン樹脂（８０〜９９％）、Ａｇナノ粒子（１〜２０％）の範囲が好ましい。上記分散液の割合とすることにより、中間層３の抵抗値が調整され、５〜４０Ｖ程度の適度な印加電圧で電子放出させることができる。 In addition, the ratio of the dispersion liquid of the resin 4 and the conductive fine particles 5 is preferably in the range of silicone resin (80 to 99%) and Ag nanoparticles (1 to 20%). By setting it as the ratio of the said dispersion liquid, the resistance value of the intermediate | middle layer 3 is adjusted, and it can discharge | release an electron with the moderate applied voltage of about 5-40V.
シリコーン樹脂の種類として室温硬化性シリコーンを用いたが、シリコーン樹脂の硬化方法は限定されない。ただし、熱硬化性シリコーン樹脂は、硬化温度が一般的に１００℃〜１５０℃であり、熱応力による撓みが発生するため、第１電極１の材料や膜厚により適さない場合がある。一方、ＵＶ硬化性シリコーン樹脂は、ＵＶ光の照射によって硬化できるため熱応力が発生することがなく、第１電極１の材料や膜厚に影響されずに用いることができる。 Although room temperature curable silicone was used as the type of silicone resin, the curing method of the silicone resin is not limited. However, the thermosetting silicone resin generally has a curing temperature of 100 ° C. to 150 ° C., and may bend due to thermal stress, and may not be suitable depending on the material and film thickness of the first electrode 1. On the other hand, the UV curable silicone resin can be used without being affected by the material and film thickness of the first electrode 1 because it can be cured by irradiation with UV light, so that no thermal stress is generated.
次に、第１電極１上に絶縁膜６が形成され、開口部から第１電極１の一部が露出した状態の表面に、上記で作製した樹脂４と導電性微粒子５の分散液をスピンコート法で塗布した。形成された塗布膜は、大気中の湿気によりシリコーン樹脂が縮合重合し、Ａｇナノ粒子が分散された層状の樹脂４となり、中間層３が形成される。中間層３の膜厚は、電子放出素子に印加する電圧の大きさや中間層３の抵抗値によって異なるが、例えば、０．３〜２．０μｍとすることができる。 Next, the insulating film 6 is formed on the first electrode 1, and the dispersion liquid of the resin 4 and the conductive fine particles 5 produced above is spun onto the surface in which a part of the first electrode 1 is exposed from the opening. The coating method was applied. In the formed coating film, the silicone resin is condensed and polymerized by moisture in the atmosphere to form a layered resin 4 in which Ag nanoparticles are dispersed, and the intermediate layer 3 is formed. The thickness of the intermediate layer 3 varies depending on the magnitude of the voltage applied to the electron-emitting device and the resistance value of the intermediate layer 3, but can be set to, for example, 0.3 to 2.0 μm.
次に、中間層３の表面に、マグネトロンスパッタ装置を用いて第２電極２を形成した。第２電極２は、第１電極１との間で中間層３に対して電圧を印加できるものであればよいため、導電性を有する材質および製法であれば特に制限されるものではない。また、第２電極２の膜厚は、厚すぎると電子が第２電極２にトラップされて外部へ放出される電子の量が減少し、電子の放出効率が減少するため、できるだけ薄い方が好ましい。例えば、Ａｕ−Ｐｄを材料とした膜厚５０ｎｍ、面積４９ｍｍ２の第２電極２を形成して、図２及び図３に示した電子放出素子１１を得た。 Next, the second electrode 2 was formed on the surface of the intermediate layer 3 using a magnetron sputtering apparatus. Since the 2nd electrode 2 should just be a thing which can apply a voltage with respect to the intermediate | middle layer 3 between the 1st electrodes 1, if it is a material and manufacturing method which have electroconductivity, it will not restrict | limit in particular. Further, if the film thickness of the second electrode 2 is too thick, electrons are trapped by the second electrode 2 and the amount of electrons emitted to the outside is reduced, so that the electron emission efficiency is reduced. . For example, the second electrode 2 having a film thickness of 50 nm and an area of 49 mm 2 made of Au—Pd was formed, and the electron-emitting device 11 shown in FIGS. 2 and 3 was obtained.
図４は、実施例１の電子放出素子１１の大気圧中での電子放出性能を測定するための実験系３１を示す模式図である。実験系３１は、電子放出素子１１の第２電極２側に対向電極７０を対向状に配置し、対向電極７０に直流電源８Ｂを接続したものである。上記の実験系３１を大気圧中で駆動し、電子放出素子１１から放出される電子量を電子放出電流として測定した。対向電極７０に印加する直流電圧Ｖ２は０．５ｋＶであり、電子放出素子１１に印加する交流電圧Ｖ１は０〜２５Ｖとした。 FIG. 4 is a schematic diagram showing an experimental system 31 for measuring the electron emission performance of the electron-emitting device 11 of Example 1 at atmospheric pressure. In the experimental system 31, a counter electrode 70 is disposed on the second electrode 2 side of the electron-emitting device 11 so as to face each other, and a DC power source 8B is connected to the counter electrode 70. The experimental system 31 was driven at atmospheric pressure, and the amount of electrons emitted from the electron-emitting device 11 was measured as an electron emission current. The DC voltage V2 applied to the counter electrode 70 was 0.5 kV, and the AC voltage V1 applied to the electron-emitting device 11 was 0 to 25V.
図５は、上記実験系３１により電子放出電流を測定した結果を示すグラフである。図５に示すように、実施例１の電子放出素子１１は、大気中で最大で３５μＡ／ｃｍ２の電子放出電流が得られた。また、電子放出素子１１に２５Ｖまで印加しても絶縁破壊が生じることはなかった。 FIG. 5 is a graph showing the result of measuring the electron emission current by the experimental system 31. As shown in FIG. 5, the electron-emitting device 11 of Example 1 obtained an electron emission current of 35 μA / cm 2 at maximum in the atmosphere. Further, even when applying up to 25 V to the electron-emitting device 11, dielectric breakdown did not occur.
図６は、実施例１の電子放出素子１１の真空中での電子放出性能を測定するための実験系３２を示す模式図である。上記実験系３２において、対向電極７０の電子放出素子１１と相対する側に蛍光体膜７１が形成されている。上記実験系３２を３．３×１０−３Ｐａの真空容器中に設置して、実施例１の電子放出素子１１の電放出性能を測定した。その結果、対向電極７０に印加する直流電圧Ｖ２は０．５ｋＶであり、電子放出素子１１に印加する交流電圧Ｖ１は１５Ｖのとき最大で９９μＡ／ｃｍ２の電子放出電流が得られた。また、このとき電子放出素子１１から電子が放出されたことを蛍光体の発光点より観察することができ、上記発光点は電子放出部７の内部で高い均一性をもって発光していた。 FIG. 6 is a schematic diagram showing an experimental system 32 for measuring the electron emission performance in vacuum of the electron-emitting device 11 of the first embodiment. In the experimental system 32, a phosphor film 71 is formed on the side of the counter electrode 70 facing the electron-emitting device 11. The experimental system 32 was installed in a vacuum vessel of 3.3 × 10 −3 Pa, and the electron emission performance of the electron-emitting device 11 of Example 1 was measured. As a result, when the DC voltage V2 applied to the counter electrode 70 was 0.5 kV and the AC voltage V1 applied to the electron emitter 11 was 15 V, an electron emission current of 99 μA / cm 2 at the maximum was obtained. At this time, it was possible to observe that electrons were emitted from the electron-emitting device 11 from the light emission point of the phosphor, and the light emission point emitted light with high uniformity inside the electron emission portion 7.
＜実施例２＞
図７は、実施例２の電子放出素子１２の構成を示す断面図である。実施例２の電子放出素子１２において、実施例１の電子放出素子１１と異なるのは、第１電極１を可撓性基板９上に形成したことである。それ以外の構成は実施例１と同じであり、詳細な説明は省略する。
<Example 2>
FIG. 7 is a cross-sectional view illustrating a configuration of the electron-emitting device 12 according to the second embodiment. The electron-emitting device 12 of Example 2 differs from the electron-emitting device 11 of Example 1 in that the first electrode 1 is formed on the flexible substrate 9. The other configuration is the same as that of the first embodiment, and detailed description thereof is omitted.
特許文献１のように中間層に無機絶縁材料を用いた電子放出素子は、湾曲等が生じて力が加わると、中間層に亀裂が入り破壊されてしまうので、材料や膜厚の選定によりある程度の機械強度のある基板材料を用いる必要があった。 An electron-emitting device using an inorganic insulating material for the intermediate layer as in Patent Document 1 is cracked in the intermediate layer and is destroyed when a force is applied due to bending or the like. It was necessary to use a substrate material having a high mechanical strength.
本発明の電子放出素子１２では、中間層３が柔軟性のある樹脂４を主体としているため可撓性基板９を使用することにより、可撓性を備えた電子放出素子１２を得ることができる。また、実施例１のように室温硬化性の樹脂を使用した場合、高温での熱処理も不要であるため、耐熱性の低い樹脂や紙等を材料とする可撓性基板９を使用することができる。このため、各種可撓性基板９を用いて、可撓性基板９上に第１電極１となる導電性薄膜を形成することにより、可撓性を備えた電子放出素子１２を様々な装置に適用することができる。 In the electron-emitting device 12 of the present invention, since the intermediate layer 3 is mainly composed of a flexible resin 4, the use of the flexible substrate 9 makes it possible to obtain the electron-emitting device 12 having flexibility. . In addition, when a room temperature curable resin is used as in Example 1, a heat treatment at a high temperature is not required, so that a flexible substrate 9 made of a resin or paper having low heat resistance may be used. it can. For this reason, by using various flexible substrates 9 and forming a conductive thin film to be the first electrode 1 on the flexible substrate 9, the electron-emitting device 12 having flexibility can be used in various apparatuses. Can be applied.
例えば、可撓性を備えた電子放出素子１２は、外力による変形に対しても耐えることができ、湾曲した状態で使用することも可能である。 For example, the electron-emitting device 12 having flexibility can withstand deformation caused by an external force, and can be used in a curved state.
本発明に係る電子放出素子は、適度な電圧の印加により均一に電子放出させることが可能である。よって、例えば、電子写真方式の複写機、プリンタ、ファクシミリ等の画像形成装置の帯電装置や、電子線硬化装置、あるいは発光体と組み合わせることによる画像表示装置、または放出された電子が発生させるイオン風を利用することによるイオン風発生装置等に、好適に適用することができる。 The electron-emitting device according to the present invention can emit electrons uniformly by applying an appropriate voltage. Therefore, for example, a charging device of an image forming apparatus such as an electrophotographic copying machine, a printer, a facsimile, an image display device combined with an electron beam curing device or a light emitter, or an ion wind generated by emitted electrons. It can apply suitably to the ion wind generator etc. by utilizing this.
１ 第１電極（電極基板）
２ 第２電極
３ 中間層（電子加速層）
４ 樹脂
５ 導電性微粒子
６ 絶縁膜
７ 電子放出部
８ 電源部
９ 可撓性基板
１０、１１、１２ 電子放出素子
1 First electrode (electrode substrate)
2 Second electrode 3 Intermediate layer (electron acceleration layer)
4 Resin 5 Conductive Fine Particle 6 Insulating Film 7 Electron Emission Part 8 Power Supply Part 9 Flexible Substrate 10, 11, 12 Electron Emission Element
Claims (3)
前記中間層は、導電性微粒子を含んだ樹脂であり、絶縁性微粒子を含まないことを特徴とする電子放出素子。 A first electrode; a second electrode disposed opposite to the layer surface of the first electrode; and an intermediate layer between the first electrode and the second electrode, wherein the first electrode and the second electrode by applying a voltage between the electrodes, an electron-emitting device to emit the second electrode or et electronic,
The electron-emitting device, wherein the intermediate layer is a resin containing conductive fine particles and does not contain insulating fine particles .
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| KR100792268B1 (en) * | 2001-01-24 | 2008-01-07 | 가부시키가이샤 히다치 고쿠사이 덴키 | System for providing training in semiconductor manufacturing system operation techniques |
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| JP2009224192A (en) * | 2008-03-17 | 2009-10-01 | Nippon Hoso Kyokai <Nhk> | Imaging apparatus |
| JP4768051B2 (en) * | 2009-05-14 | 2011-09-07 | シャープ株式会社 | Manufacturing method of electron-emitting device, electron-emitting device, electron-emitting device, charging device, image forming device, electron beam curing device, self-luminous device, image display device, blower device, cooling device |
| JP5133295B2 (en) * | 2009-04-23 | 2013-01-30 | シャープ株式会社 | Electron emission apparatus, self-luminous device, image display apparatus, charging apparatus, image forming apparatus, electron beam curing apparatus, and driving method of electron emission element |
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| KR100792268B1 (en) * | 2001-01-24 | 2008-01-07 | 가부시키가이샤 히다치 고쿠사이 덴키 | System for providing training in semiconductor manufacturing system operation techniques |
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