JP5999027B2 - Physical quantity sensor - Google Patents

Physical quantity sensor Download PDF

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JP5999027B2
JP5999027B2 JP2013114306A JP2013114306A JP5999027B2 JP 5999027 B2 JP5999027 B2 JP 5999027B2 JP 2013114306 A JP2013114306 A JP 2013114306A JP 2013114306 A JP2013114306 A JP 2013114306A JP 5999027 B2 JP5999027 B2 JP 5999027B2
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substrate
pad
pad portion
bonded
electrode
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JP2014232090A (en
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圭正 杉本
圭正 杉本
酒井　峰一
峰一 酒井
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Denso Corp
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Denso Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • B81C3/001—Bonding of two components
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/05—Type of movement
    • B81B2203/058—Rotation out of a plane parallel to the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/033—Thermal bonding
    • B81C2203/035—Soldering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0831—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type having the pivot axis between the longitudinal ends of the mass, e.g. see-saw configuration

Description

本発明は、第１基板と第２基板との間に気密室が形成され、気密室に物理量に応じたセンサ信号を出力するセンシング部が備えられた物理量センサに関するものである。   The present invention relates to a physical quantity sensor in which an airtight chamber is formed between a first substrate and a second substrate, and a sensing unit that outputs a sensor signal corresponding to the physical quantity is provided in the airtight chamber.

従来より、この種の物理量センサとして、次のようなものが提案されている（例えば、特許文献１参照）。   Conventionally, the following is proposed as this kind of physical quantity sensor (for example, refer to patent documents 1).

すなわち、第１基板には、センシング部が形成されていると共に、当該センシング部と電気的に接続されるパッド部およびセンシングを囲む枠状の封止部が形成されている。また、第２基板には、パッド部（配線部）が形成されていると共に、第１基板に形成された封止部に対応する枠状の封止部が形成されている。そして、第１基板の封止部と第２基板の封止部とが接合されることで第１、第２基板の間に気密室が構成され、気密室内にセンシング部が配置されている。また、第１基板に形成されたパッド部と第２基板に形成されたパッド部とが接合されている。   That is, a sensing part is formed on the first substrate, and a pad part electrically connected to the sensing part and a frame-shaped sealing part surrounding the sensing are formed. In addition, a pad portion (wiring portion) is formed on the second substrate, and a frame-shaped sealing portion corresponding to the sealing portion formed on the first substrate is formed. And the sealing part of the 1st substrate and the sealing part of the 2nd substrate are joined, an airtight room is constituted between the 1st and 2nd substrates, and a sensing part is arranged in an airtight room. Further, the pad portion formed on the first substrate and the pad portion formed on the second substrate are joined.

なお、第１基板に形成されるパッド部と第２基板に形成されたパッド部とは、共晶接合されている。   The pad portion formed on the first substrate and the pad portion formed on the second substrate are eutectic bonded.

特開２０１０−１７１３６８号公報JP 2010-171368 A

しかしながら、上記物理量センサでは、第１基板に形成されたパッド部と第２基板に形成されたパッド部とが共晶接合されており、接合界面に反応層（合金層）が形成される。このため、接合強度がばらつき、信頼性が低下するという問題がある。   However, in the physical quantity sensor, the pad portion formed on the first substrate and the pad portion formed on the second substrate are eutectic bonded, and a reaction layer (alloy layer) is formed at the bonding interface. For this reason, there is a problem that the bonding strength varies and the reliability decreases.

すなわち、金属材料が共晶接合される場合、接合界面には反応層が形成され、当該反応層は図７に示されるように反応時間に応じて成長を続ける。これに対し、接合強度は、反応層が形成される初期状態では接合界面における密着面積の増加と接合界面の原子結合によって増加するが、反応層が所定時間だけ成長した後は格子間隔の差のために厚くなった反応層内にクラックが発生し易くなることによって減少する。つまり、反応層の成長度合いによって、第１基板に形成されたパッド部と第２基板に形成されたパッド部との接合強度がばらついてしまう。   That is, when the metal material is eutectic bonded, a reaction layer is formed at the bonding interface, and the reaction layer continues to grow according to the reaction time as shown in FIG. On the other hand, the bonding strength increases in the initial state where the reaction layer is formed due to an increase in the adhesion area at the bonding interface and atomic bonding at the bonding interface, but after the reaction layer grows for a predetermined time, the difference in lattice spacing For this reason, the thickness of the reaction layer is reduced because cracks are easily generated in the reaction layer. That is, the bonding strength between the pad portion formed on the first substrate and the pad portion formed on the second substrate varies depending on the degree of growth of the reaction layer.

本発明は上記点に鑑みて、第１基板に形成されたパッド部と第２基板に形成されたパッド部との接合強度がばらつくことを抑制できる物理量センサを提供することを目的とする。   In view of the above points, an object of the present invention is to provide a physical quantity sensor that can suppress variation in bonding strength between a pad portion formed on a first substrate and a pad portion formed on a second substrate.

上記目的を達成するため、請求項１に記載の発明では、一面（１０ａ）を有する第１基板（１０）と、一面（４０ａ）を有し、当該一面が第１基板の一面と対向する状態で第１基板と接合される第２基板（４０）とを備え、第１、第２基板の間に気密室（９０）が形成され、気密室に物理量に応じたセンサ信号を出力するセンシング部（６０）が配置された物理量センサにおいて、以下の点を特徴としている。   In order to achieve the above object, according to the first aspect of the present invention, there is provided a first substrate (10) having one surface (10a) and a surface (40a), wherein the one surface faces one surface of the first substrate. And a second substrate (40) bonded to the first substrate, a hermetic chamber (90) is formed between the first and second substrates, and a sensing unit that outputs a sensor signal corresponding to a physical quantity to the hermetic chamber The physical quantity sensor in which (60) is arranged is characterized by the following points.

すなわち、第１基板の一面には、センシング部と電気的に接続される第１基板用パッド部（２５）が形成され、第２基板の一面には、第１基板用パッド部と接合される第２基板用パッド部（５３）が形成され、第１基板用パッド部と第２基板用パッド部とは、同じ金属材料を用いて構成されて金属接合されており、第２基板には、厚さ方向に貫通して第２基板用パッド部に達する貫通孔（７０ａ）に第２基板用パッド部と電気的に接続され、かつ第１、第２基板用パッド部と同じ金属材料を用いて構成された貫通電極（７０ｃ）が配置されており、第１基板用パッド部、第２基板用パッド部、貫通電極の一部が積層されていることを特徴としている。 That is, a first substrate pad portion (25) electrically connected to the sensing unit is formed on one surface of the first substrate, and the first substrate pad portion is bonded to one surface of the second substrate. A second substrate pad portion (53) is formed, and the first substrate pad portion and the second substrate pad portion are configured using the same metal material and are metal-bonded . The through-hole (70a) that penetrates in the thickness direction and reaches the second substrate pad portion is electrically connected to the second substrate pad portion, and uses the same metal material as the first and second substrate pad portions. The through electrode (70c) configured as described above is disposed, and the first substrate pad portion, the second substrate pad portion, and a part of the through electrode are laminated .

これによれば、第１、第２基板用パッド部が同じ金属材料を用いて構成されているため、第１、第２基板用パッド部の接合界面に反応層（合金層）が形成されることを抑制でき、接合強度がばらつくことを抑制できる。   According to this, since the first and second substrate pad portions are formed using the same metal material, a reaction layer (alloy layer) is formed at the bonding interface between the first and second substrate pad portions. This can be suppressed, and variation in bonding strength can be suppressed.

また、貫通電極を第１、第２基板用パッドと同じ金属材料を用いて構成することにより、貫通電極と第２基板用パッドとの間に反応層が形成されることを抑制できる。 Further, by forming the through electrode using the same metal material as the first and second substrate pads, it is possible to suppress the formation of a reaction layer between the through electrode and the second substrate pad.

なお、この欄および特許請求の範囲で記載した各手段の括弧内の符号は、後述する実施形態に記載の具体的手段との対応関係を示すものである。   In addition, the code | symbol in the bracket | parenthesis of each means described in this column and the claim shows the correspondence with the specific means as described in embodiment mentioned later.

本発明の第１実施形態における加速度センサの断面図である。It is sectional drawing of the acceleration sensor in 1st Embodiment of this invention. 図１に示す第１基板における第２基板側の平面図である。It is a top view by the side of the 2nd board | substrate in the 1st board | substrate shown in FIG. 図１に示す第２基板における第１基板側の平面図である。It is a top view by the side of the 1st substrate in the 2nd substrate shown in FIG. 第１基板に対する製造工程を示す断面図である。It is sectional drawing which shows the manufacturing process with respect to a 1st board | substrate. 貼り合わせ基板に対する製造工程を示す断面図である。It is sectional drawing which shows the manufacturing process with respect to a bonded substrate board. 図１に示す加速度センサの製造工程を示す断面図である。It is sectional drawing which shows the manufacturing process of the acceleration sensor shown in FIG. 反応層の成長と接合強度との関係を示す図である。It is a figure which shows the relationship between the growth of a reaction layer, and joint strength.

以下、本発明の実施形態について図に基づいて説明する。なお、以下の各実施形態相互において、互いに同一もしくは均等である部分には、同一符号を付して説明を行う。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other will be described with the same reference numerals.

（第１実施形態）
本発明の第１実施形態について図面を参照しつつ説明する。なお、本実施形態では、加速度を検出する加速度センサに本発明の物理量センサを適用した例を説明する。 (First embodiment)
A first embodiment of the present invention will be described with reference to the drawings. In the present embodiment, an example in which the physical quantity sensor of the present invention is applied to an acceleration sensor that detects acceleration will be described.

図１に示されるように、加速度センサは、第１基板１０と第２基板４０とが積層されて構成されている。なお、図１は、図２および図３中のI−I断面に相当している。   As shown in FIG. 1, the acceleration sensor is configured by stacking a first substrate 10 and a second substrate 40. 1 corresponds to a cross section taken along the line II in FIG. 2 and FIG.

第１基板１０は、本実施形態では、支持基板１１上に絶縁膜１２を介して半導体層１３が配置されたＳＯＩ（Silicon on Insulator）基板とされており、一面１０ａが半導体層１３のうち絶縁膜１２側と反対側の表面で構成されている。なお、支持基板１１は、シリコン基板等で構成され、絶縁膜１２はＳｉＯ２やＳｉＮ等で構成され、半導体層１３はポリシリコン等で構成される。 In the present embodiment, the first substrate 10 is an SOI (Silicon on Insulator) substrate in which a semiconductor layer 13 is disposed on a support substrate 11 via an insulating film 12, and one surface 10 a is insulated from the semiconductor layer 13. It is comprised by the surface on the opposite side to the film | membrane 12 side. The support substrate 11 is made of a silicon substrate or the like, the insulating film 12 is made of SiO 2 or SiN, and the semiconductor layer 13 is made of polysilicon or the like.

そして、半導体層１３には、図１および図２に示されるように、マイクロマシン加工が施されて溝部１４が形成され、溝部１４によって可動部２０と周辺部３０とが区画されている。   As shown in FIGS. 1 and 2, the semiconductor layer 13 is subjected to micromachining to form a groove portion 14, and the movable portion 20 and the peripheral portion 30 are partitioned by the groove portion 14.

また、支持基板１１および絶縁膜１２には、可動部２０（後述する枠部２２）が支持基板１１および絶縁膜１２と接触することを防止するために、可動部２０と対向する部分に窪み部１５が形成されている。   Further, in order to prevent the movable portion 20 (frame portion 22, which will be described later) from coming into contact with the support substrate 11 and the insulating film 12, the support substrate 11 and the insulating film 12 are recessed in a portion facing the movable portion 20. 15 is formed.

可動部２０は、平面矩形状の開口部２１が形成された矩形枠状の枠部２２と、開口部２１の対向辺部を連結するように備えられたトーション梁２３とを有している。そして、可動部２０は、トーション梁２３が絶縁膜１２に支持されたアンカー部２４と連結されることにより、支持基板１１に支持されている。   The movable portion 20 includes a rectangular frame-shaped frame portion 22 in which a planar rectangular opening portion 21 is formed, and a torsion beam 23 provided so as to connect opposite sides of the opening portion 21. The movable portion 20 is supported by the support substrate 11 by connecting the torsion beam 23 to the anchor portion 24 supported by the insulating film 12.

ここで、図１〜図３中のｘ軸、ｙ軸、ｚ軸の各方向について説明する。図１〜図３中では、ｘ軸方向を図１中紙面左右方向とし、ｙ軸方向を第１基板１０の面内においてｘ軸と直交する方向とし、ｚ軸方向を第１基板１０の面方向に対する法線方向としている。   Here, each direction of the x axis, the y axis, and the z axis in FIGS. 1 to 3 will be described. 1 to 3, the x-axis direction is the left-right direction in FIG. 1, the y-axis direction is the direction orthogonal to the x-axis in the plane of the first substrate 10, and the z-axis direction is the surface of the first substrate 10. The direction is normal to the direction.

トーション梁２３は、ｚ軸方向の加速度が印加されたとき、可動部２０の回転中心となる回転軸となる部材であり、本実施形態では開口部２１を２分割するように備えられている。   The torsion beam 23 is a member that becomes a rotation axis that becomes the rotation center of the movable portion 20 when an acceleration in the z-axis direction is applied, and is provided so as to divide the opening 21 into two in this embodiment.

枠部２２は、ｚ軸方向の加速度が印加されたとき、トーション梁２３を回転軸として回転できるように、トーション梁２３を基準として非対称な形状とされている。本実施形態では、枠部２２は、第１部位２２ａにおけるトーション梁２３から最も離れている部分の端部までのｘ軸方向の長さが、第２部位２２ｂにおけるトーション梁２３から最も離れている部分の端部までのｘ軸方向の長さより短くされている。つまり、本実施形態の枠部２２は、第１部位２２ａの質量が第２部位２２ｂの質量より小さくされている。   The frame portion 22 has an asymmetric shape with respect to the torsion beam 23 so that it can rotate around the torsion beam 23 when an acceleration in the z-axis direction is applied. In the present embodiment, the length of the frame portion 22 in the x-axis direction to the end of the portion farthest from the torsion beam 23 in the first portion 22a is farthest from the torsion beam 23 in the second portion 22b. The length to the end of the part is shorter than the length in the x-axis direction. That is, in the frame portion 22 of the present embodiment, the mass of the first part 22a is smaller than the mass of the second part 22b.

また、第１基板１０の一面１０ａ（半導体層１３の表面）には、パッド部２５、３１および枠状の封止部３２が形成されている。具体的には、パッド部２５はアンカー部２４に形成されて当該アンカー部２４（可動部２０）と接続され、パッド部３１は周辺部３０に形成されて当該周辺部３０と接続され、封止部３２は、可動部２０（溝部１４）を囲むように周辺部３０に形成されている。   In addition, pad portions 25 and 31 and a frame-shaped sealing portion 32 are formed on one surface 10 a (the surface of the semiconductor layer 13) of the first substrate 10. Specifically, the pad portion 25 is formed on the anchor portion 24 and connected to the anchor portion 24 (movable portion 20), and the pad portion 31 is formed on the peripheral portion 30 and connected to the peripheral portion 30 for sealing. The part 32 is formed in the peripheral part 30 so as to surround the movable part 20 (groove part 14).

なお、パッド部３１は、周辺部３０のうち封止部３２で囲まれる領域内に配置されており、パッド部２５、３１および封止部３２は、本実施形態では、アルミニウムで構成されている。また、本実施形態では、パッド部２５が本発明の第１基板用パッド部に相当し、封止部３２が本発明の第１基板用封止部に相当している。   In addition, the pad part 31 is arrange | positioned in the area | region enclosed by the sealing part 32 among the peripheral parts 30, and the pad parts 25 and 31 and the sealing part 32 are comprised with the aluminum in this embodiment. . In the present embodiment, the pad portion 25 corresponds to the first substrate pad portion of the present invention, and the sealing portion 32 corresponds to the first substrate sealing portion of the present invention.

さらに、第１基板１０の一面１０ａには、周辺部３０における外縁部に封止部３２を囲む枠状のスペーサ３３が形成されている。このスペーサ３３は、第１基板１０と第２基板４０との間隔を維持するものであり、酸化膜等の絶縁膜で構成されている。特に限定されるものではないが、外部環境から印加されるナトリウムイオンなどを捕獲するため、イオントラップとなるリン等を添加してもよい。   Further, a frame-like spacer 33 surrounding the sealing portion 32 is formed on the outer edge portion of the peripheral portion 30 on the one surface 10 a of the first substrate 10. The spacer 33 maintains the distance between the first substrate 10 and the second substrate 40, and is composed of an insulating film such as an oxide film. Although not particularly limited, phosphorus or the like serving as an ion trap may be added in order to capture sodium ions applied from the external environment.

第２基板４０は、図１および図３に示されるように、貼り合わせ基板４１と、貼り合わせ基板４１のうち第１基板１０と対向する一面および側面に形成された絶縁膜４２と、貼り合わせ基板４１のうち第１基板１０側と反対側の他面に形成された絶縁膜４３とを有している。そして、絶縁膜４２のうち第１基板１０と対向する面にて第２基板４０の一面４０ａが構成されている。   As shown in FIGS. 1 and 3, the second substrate 40 is bonded to the bonded substrate 41, the insulating film 42 formed on one side and the side of the bonded substrate 41 facing the first substrate 10, and the bonded substrate 41. The substrate 41 has an insulating film 43 formed on the other surface opposite to the first substrate 10 side. Then, one surface 40 a of the second substrate 40 is formed on the surface of the insulating film 42 facing the first substrate 10.

なお、貼り合わせ基板４１は、シリコン基板等で構成され、絶縁膜４２はＳｉＯ２やＳｉＮ等で構成され、絶縁膜４３はＴＥＯＳ等で構成される。 The bonded substrate 41 is made of a silicon substrate or the like, the insulating film 42 is made of SiO 2 or SiN, and the insulating film 43 is made of TEOS or the like.

そして、第２基板４０の一面４０ａには、第１、第２配線部５１、５２が形成されている。具体的には、第１配線部５１は、第１部位２２ａと対向する部分に形成されて当該第１部位２２ａとの間に所定の容量を構成する第１固定電極５１ａと、第１固定電極５１ａから引き出された第１引き出し配線５１ｂとを有している。また、第２配線部５２は、第２部位２２ｂと対向する部分に形成されて当該第２部位２２ｂとの間に所定の容量を構成する第２固定電極５２ａと、第２固定電極５２ａから引き出された第２引き出し配線５２ｂとを有している。これにより、可動部２０と第１、第２固定電極５１ａ、５２ａとによって加速度に応じたセンサ信号を出力するセンシング部６０が構成されている。   The first and second wiring portions 51 and 52 are formed on the one surface 40 a of the second substrate 40. Specifically, the first wiring part 51 is formed in a portion facing the first part 22a, and includes a first fixed electrode 51a and a first fixed electrode that form a predetermined capacity with the first part 22a. And a first lead wiring 51b led out from 51a. Further, the second wiring portion 52 is formed in a portion facing the second portion 22b, and is pulled out from the second fixed electrode 52a and the second fixed electrode 52a that constitutes a predetermined capacity between the second portion 22b. Second lead wiring 52b. Thereby, the sensing part 60 which outputs the sensor signal according to acceleration by the movable part 20 and the 1st, 2nd fixed electrodes 51a and 52a is comprised.

なお、第１、第２固定電極５１ａ、５２ａは、同じ平面形状とされ、加速度が印加されていない状態において、第１、第２部位２２ａ、２２ｂとの間に等しい容量を構成している。また、第１、第２引き出し配線５１ｂ、５２ｂは、それぞれ第１、第２固定電極５１ａ、５２ａと反対側の端部の形状が円状とされている。   The first and second fixed electrodes 51a and 52a have the same planar shape, and form an equal capacity between the first and second portions 22a and 22b in a state where no acceleration is applied. The first and second lead wires 51b and 52b have circular shapes at the ends opposite to the first and second fixed electrodes 51a and 52a, respectively.

また、第２基板４０の一面４０ａには、パッド部２５、パッド部３１と対向する部分にパッド部５３、５４が形成されていると共に、封止部３２と対向する部分に当該封止部３２と同じ形状の封止部５５が形成されている。   Further, on one surface 40 a of the second substrate 40, pad portions 53 and 54 are formed at portions facing the pad portion 25 and pad portion 31, and the sealing portion 32 is disposed at a portion facing the sealing portion 32. The sealing part 55 having the same shape as that is formed.

なお、パッド部５３、５４および封止部５５は、パッド部２５、３１および封止部３２と同様に、アルミニウムで構成されている。また、本実施形態では、パッド部５３が本発明の第２基板用パッド部に相当し、封止部５５が本発明の第２基板用封止部に相当している。   The pad parts 53 and 54 and the sealing part 55 are made of aluminum, like the pad parts 25 and 31 and the sealing part 32. In the present embodiment, the pad portion 53 corresponds to the second substrate pad portion of the present invention, and the sealing portion 55 corresponds to the second substrate sealing portion of the present invention.

さらに、第２基板４０には、第２基板４０を厚さ方向（第１、第２基板１０、４０の積層方向）に貫通する４つの貫通電極部７０が形成されている。各貫通電極部７０は、絶縁膜４３、貼り合わせ基板４１、絶縁膜４２を貫通する貫通孔７０ａに絶縁膜７０ｂを介して貫通電極７０ｃが形成され、絶縁膜４３上に貫通電極７０ｃおよび外部回路と電気的に接続されるパッド部７０ｄが形成された構成とされている。   Further, four through-electrode portions 70 that penetrate the second substrate 40 in the thickness direction (the stacking direction of the first and second substrates 10 and 40) are formed in the second substrate 40. In each through electrode portion 70, a through electrode 70 c is formed in a through hole 70 a that penetrates the insulating film 43, the bonded substrate 41, and the insulating film 42 via an insulating film 70 b, and the through electrode 70 c and the external circuit are formed on the insulating film 43. The pad portion 70d that is electrically connected to the pad is formed.

そして、各貫通電極部７０は、それぞれ第１、第２配線部５１、５２、パッド部５３、５４と電気的に接続されている。つまり、各貫通電極部７０における貫通孔７０ａは、それぞれ第１、第２配線部５１、５２、パッド部５３、５４に達するように形成されており、各貫通電極７０ｃは、それぞれ第１、第２配線部５１、５２、パッド部５３、５４と電気的に接続されるように貫通孔７０ａに配置されている。   The through electrode portions 70 are electrically connected to the first and second wiring portions 51 and 52 and the pad portions 53 and 54, respectively. That is, the through hole 70a in each through electrode part 70 is formed to reach the first and second wiring parts 51 and 52 and the pad parts 53 and 54, respectively. The two wiring portions 51 and 52 and the pad portions 53 and 54 are disposed in the through hole 70a so as to be electrically connected.

これにより、可動部２０がパッド部２５、５３を介して貫通電極７０ｃと接続され、第１、第２固定電極５１ａ、５２ａが貫通電極７０ｃと接続される。また、周辺部３０がパッド部３１、５４を介して貫通電極７０ｃと接続される。   Thereby, the movable portion 20 is connected to the through electrode 70c via the pad portions 25 and 53, and the first and second fixed electrodes 51a and 52a are connected to the through electrode 70c. In addition, the peripheral portion 30 is connected to the through electrode 70 c via the pad portions 31 and 54.

なお、第１、第２配線部５１、５２と電気的に接続される貫通電極部７０の貫通孔７０ａは、第１、第２配線部５１、５２における第１、第２引き出し配線５１ｂ、５２ｂのうち第１、第２固定電極５１ａ、５２ａ側と反対側の端部に達するように形成されている。また、本実施形態では、貫通孔７０ａは円筒状とされ、絶縁膜７０ｂは、例えば、ＴＥＯＳ等の絶縁材料で構成されている。そして、貫通電極７０ｃは、第１、第２配線部５１、５２、パッド部５３、５４と同様に、アルミニウムで構成されている。   Note that the through hole 70a of the through electrode portion 70 that is electrically connected to the first and second wiring portions 51 and 52 corresponds to the first and second lead wirings 51b and 52b in the first and second wiring portions 51 and 52, respectively. Of these, the first and second fixed electrodes 51a and 52a are formed so as to reach the end opposite to the side. In the present embodiment, the through hole 70a has a cylindrical shape, and the insulating film 70b is made of an insulating material such as TEOS, for example. And the penetration electrode 70c is comprised with aluminum similarly to the 1st, 2nd wiring parts 51 and 52 and the pad parts 53 and 54. As shown in FIG.

さらに、絶縁膜４３には、貼り合わせ基板４１の所定箇所を開口させるコンタクトホール４３ａが形成されている。そして、コンタクトホール４３ａには、貼り合わせ基板４１と外部回路とを接続して当該貼り合わせ基板４１を所定の電位に維持するためのコンタクト部８０が埋め込まれている。このコンタクト部８０は、貫通電極７０ｃおよびパッド部７０ｄと同様に、アルミニウムで構成されている。   Further, a contact hole 43 a that opens a predetermined portion of the bonded substrate 41 is formed in the insulating film 43. In the contact hole 43a, a contact portion 80 for connecting the bonded substrate 41 and an external circuit and maintaining the bonded substrate 41 at a predetermined potential is embedded. The contact portion 80 is made of aluminum, like the through electrode 70c and the pad portion 70d.

以上が本実施形態における第２基板４０の構成である。そして、上記第１、第２基板１０、４０が接合されて一体化されることにより、加速度センサが構成されている。具体的には、第１、第２基板１０、４０は、パッド部２５とパッド部５３、パッド部３１とパッド部５４、封止部３２と封止部５５とが金属接合されることにより一体化されている。つまり、同じ金属材料同士が接合されており、パッド部２５とパッド部５３、パッド部３１とパッド部５４、封止部３２と封止部５５との間に反応層（合金層）は形成されていない。そして、第１、第２基板１０、４０の間の空間によって気密室９０が構成され、枠部２２および第１、第２固定電極５１ａ、５２ａが気密室９０に封止されている。   The above is the configuration of the second substrate 40 in the present embodiment. And the said 1st, 2nd board | substrates 10 and 40 are joined and integrated, and the acceleration sensor is comprised. Specifically, the first and second substrates 10 and 40 are integrated by metal bonding of the pad portion 25 and the pad portion 53, the pad portion 31 and the pad portion 54, and the sealing portion 32 and the sealing portion 55. It has become. That is, the same metal material is bonded, and a reaction layer (alloy layer) is formed between the pad portion 25 and the pad portion 53, the pad portion 31 and the pad portion 54, and the sealing portion 32 and the sealing portion 55. Not. The space between the first and second substrates 10 and 40 forms an airtight chamber 90, and the frame portion 22 and the first and second fixed electrodes 51 a and 52 a are sealed in the airtight chamber 90.

なお、第１基板１０と第２基板４０との間隔は、スペーサ３３によって規定される。また、気密室９０は、例えば、真空とされている。   Note that the distance between the first substrate 10 and the second substrate 40 is defined by the spacer 33. The hermetic chamber 90 is, for example, a vacuum.

以上が本実施形態における加速度センサの構造である。このような加速度センサは、ｚ軸方向の加速度が印加されると、枠部２２がトーション梁２３を回転軸として加速度に応じた回転をする。そして、第１部位２２ａと第１固定電極５１ａとの間の容量と、第２部位２２ｂと第２固定電極５２ａとの間の容量とが加速度に応じて変化するため、この容量変化に基づいて加速度の検出が行われる。   The above is the structure of the acceleration sensor in the present embodiment. In such an acceleration sensor, when an acceleration in the z-axis direction is applied, the frame portion 22 rotates according to the acceleration with the torsion beam 23 as a rotation axis. And since the capacity | capacitance between the 1st site | part 22a and the 1st fixed electrode 51a and the capacity | capacitance between the 2nd site | part 22b and the 2nd fixed electrode 52a change according to an acceleration, based on this capacity | capacitance change. Acceleration is detected.

次に、上記加速度センサの製造方法について説明する。   Next, a method for manufacturing the acceleration sensor will be described.

まず、図４（ａ）に示されるように、支持基板１１を用意し、支持基板１１上にＣＶＤ（Chemical Vapor Deposition）法等によって絶縁膜１２を形成する。なお、絶縁膜１２は、熱酸化等で形成してもよい。   First, as shown in FIG. 4A, a support substrate 11 is prepared, and an insulating film 12 is formed on the support substrate 11 by a CVD (Chemical Vapor Deposition) method or the like. The insulating film 12 may be formed by thermal oxidation or the like.

次に、図４（ｂ）に示されるように、絶縁膜１２上にレジストや酸化膜等のマスク（図示せず）を形成してウェットエッチング等を行い、支持基板１１に窪み部１５を形成する。   Next, as shown in FIG. 4B, a mask (not shown) such as a resist or an oxide film is formed on the insulating film 12 and wet etching or the like is performed to form a recess 15 in the support substrate 11. To do.

続いて、図４（ｃ）に示されるように、絶縁膜１２と半導体層１３とを接合して第１基板１０を形成する。絶縁膜１２と半導体層１３との接合は、特に限定されるものではないが、例えば、次のように行うことができる。   Subsequently, as illustrated in FIG. 4C, the first substrate 10 is formed by bonding the insulating film 12 and the semiconductor layer 13. The bonding between the insulating film 12 and the semiconductor layer 13 is not particularly limited, but can be performed as follows, for example.

まず、絶縁膜１２の接合面および半導体層１３の接合面にＮ２プラズマ、Ｏ２プラズマ、またはＡｒイオンビームを照射し、絶縁膜１２および半導体層１３の各接合面を活性化させる。そして、適宜形成されたアライメントマークを用いて赤外顕微鏡等によるアライメントを行い、室温〜５５０℃で絶縁膜１２および半導体層１３をいわゆる直接接合により接合する。 First, the bonding surface of the insulating film 12 and the bonding surface of the semiconductor layer 13 are irradiated with N 2 plasma, O 2 plasma, or an Ar ion beam to activate the bonding surfaces of the insulating film 12 and the semiconductor layer 13. Then, alignment by an infrared microscope or the like is performed using an appropriately formed alignment mark, and the insulating film 12 and the semiconductor layer 13 are bonded by so-called direct bonding at room temperature to 550 ° C.

なお、ここでは直接接合を例に挙げて説明したが、絶縁膜１２と半導体層１３とは、陽極接合や中間層接合、フージョン接合等の接合技術によって接合されてもよい。また、接合後に、高温アニール等の接合品質を向上させる処理を行ってもよい。さらに、接合後に、半導体層１３を研削研磨によって所望の厚さに加工してもよい。   Although the direct bonding is described as an example here, the insulating film 12 and the semiconductor layer 13 may be bonded by a bonding technique such as anodic bonding, intermediate layer bonding, or fusion bonding. Further, after the joining, a treatment for improving the joining quality such as high temperature annealing may be performed. Further, after bonding, the semiconductor layer 13 may be processed to a desired thickness by grinding and polishing.

次に、図４（ｄ）に示されるように、第１基板１０の一面１０ａにＣＶＤ法等によって絶縁膜を形成する。そして、レジストや酸化膜等のマスク（図示せず）を用いて反応性イオンエッチング等で当該絶縁膜をパターニングし、上記スペーサ３３を形成する。   Next, as shown in FIG. 4D, an insulating film is formed on one surface 10a of the first substrate 10 by a CVD method or the like. Then, the spacer 33 is formed by patterning the insulating film by reactive ion etching or the like using a mask (not shown) such as a resist or an oxide film.

その後、図４（ｅ）に示されるように、第１基板１０の一面１０ａにＣＶＤ法等によって金属膜（アルミニウム）を形成する。そして、レジストや酸化膜等のマスク（図示せず）を用いて反応性イオンエッチング等で当該金属膜をパターニングすることにより、パッド部２５、３１および封止部３２を形成する。   Thereafter, as shown in FIG. 4E, a metal film (aluminum) is formed on one surface 10a of the first substrate 10 by a CVD method or the like. And the pad parts 25 and 31 and the sealing part 32 are formed by patterning the said metal film by reactive ion etching etc. using masks (not shown), such as a resist and an oxide film.

次に、図４（ｆ）に示されるように、レジストや酸化膜等のマスク（図示せず）を用いて反応性イオンエッチング等で半導体層１３に溝部１４を形成する。これにより、可動部２０が形成された第１基板１０が用意される。   Next, as shown in FIG. 4F, a groove 14 is formed in the semiconductor layer 13 by reactive ion etching or the like using a mask (not shown) such as a resist or an oxide film. Thereby, the 1st board | substrate 10 with which the movable part 20 was formed is prepared.

また、上記図４とは別工程において、図５（ａ）に示されるように、貼り合わせ基板４１を用意し、熱酸化等によって貼り合わせ基板４１の全面に絶縁膜４２を形成する。   4A and 5B, a bonded substrate 41 is prepared, and an insulating film 42 is formed on the entire surface of the bonded substrate 41 by thermal oxidation or the like.

次に、図５（ｂ）に示されるように、絶縁膜４２のうち第１基板１０と対向する部分に金属膜を形成する。そして、レジストや酸化膜等のマスク（図示せず）を用いて反応性イオンエッチング等で当該金属膜をパターニングすることにより、第１、第２配線部５１、５２、パッド部５３、５４、封止部５５を形成する。   Next, as illustrated in FIG. 5B, a metal film is formed on a portion of the insulating film 42 that faces the first substrate 10. Then, by patterning the metal film by reactive ion etching or the like using a mask (not shown) such as a resist or an oxide film, the first and second wiring parts 51 and 52, pad parts 53 and 54, sealing A stop 55 is formed.

なお、この工程における金属膜は、図４（ｅ）に工程において形成した金属膜と同じ材料が用いられ、本実施形態ではアルミニウムが用いられる。   The metal film in this step is made of the same material as the metal film formed in the step shown in FIG. 4E, and aluminum is used in this embodiment.

続いて、図６（ａ）に示されるように、第１基板１０と第２基板４０とを接合する。具体的には、適宜形成されたアライメントマークを用いて赤外顕微鏡等によるアライメントを行い、第１基板１０のパッド部２５、３１、封止部３２と、第２基板４０のパッド部５３、５４、封止部５５とを３００〜５００°で金属接合する。   Subsequently, as shown in FIG. 6A, the first substrate 10 and the second substrate 40 are bonded. Specifically, alignment is performed by an infrared microscope or the like using appropriately formed alignment marks, and the pad portions 25 and 31 of the first substrate 10, the sealing portion 32, and the pad portions 53 and 54 of the second substrate 40. The sealing part 55 is metal-bonded at 300 to 500 °.

これにより、第１基板１０と第２基板４０との間の空間が封止部３２と封止部５５とにより封止されて気密室９０となり、枠部２２および第１、第２固定電極５１ａ、５２ａが気密室９０に気密封止される。   As a result, the space between the first substrate 10 and the second substrate 40 is sealed by the sealing portion 32 and the sealing portion 55 to form an airtight chamber 90, and the frame portion 22 and the first and second fixed electrodes 51a. , 52a are hermetically sealed in the hermetic chamber 90.

このとき、第１基板１０のパッド部２５、３１および封止部３２と、第２基板４０のパッド部５３、５４および封止部５５とは、それぞれ同じ金属であるアルミニウムで構成されているため、接合界面に反応層（合金層）が形成されない。   At this time, the pad portions 25 and 31 and the sealing portion 32 of the first substrate 10 and the pad portions 53 and 54 and the sealing portion 55 of the second substrate 40 are made of aluminum, which is the same metal. No reaction layer (alloy layer) is formed at the bonding interface.

なお、第１基板１０と第２基板４０との間隔は、スペーサ３３によって規定される。   Note that the distance between the first substrate 10 and the second substrate 40 is defined by the spacer 33.

次に、図６（ｂ）に示されるように、絶縁膜４２および貼り合わせ基板４１を第１基板１０側と反対側から研削し、第１基板１０側と反対側の絶縁膜４２を除去すると共に貼り合わせ基板４１を薄くする。なお、この工程は、第１基板１０と第２基板４０とを接合する前に行ってもよい。   Next, as shown in FIG. 6B, the insulating film 42 and the bonded substrate 41 are ground from the side opposite to the first substrate 10 side, and the insulating film 42 on the side opposite to the first substrate 10 side is removed. At the same time, the bonded substrate 41 is thinned. This step may be performed before the first substrate 10 and the second substrate 40 are bonded.

続いて、図６（ｃ）に示されるように、パッド部５３、５４に対応する場所の貼り合わせ基板４１および絶縁膜４２を除去することにより、２つの貫通孔７０ａを形成する。また、図６（ｃ）とは別断面において、第１、第２配線部５１、５２における第１、第２引き出し配線５１ｂ、５２ｂに対応する場所の貼り合わせ基板４１および絶縁膜４２を除去することにより、２つの貫通孔７０ａを形成する。そして、各貫通孔７０ａの壁面にＴＥＯＳ等の絶縁膜７０ｂを成膜する。このとき、貼り合わせ基板４１のうち第１基板１０側と反対側に形成された絶縁膜にて絶縁膜４３が構成される。つまり、絶縁膜４３と絶縁膜７０ｂとは同じ工程で形成される。その後、各貫通孔７０ａの底部に形成された絶縁膜７０ｂを除去し、各貫通孔７０ａ内において、第１、第２配線部５１、５２における第１、第２引き出し配線５１ｂ、５２ｂ、パッド部５３、５４を露出させる。   Subsequently, as illustrated in FIG. 6C, the two through holes 70 a are formed by removing the bonded substrate 41 and the insulating film 42 at locations corresponding to the pad portions 53 and 54. Further, in a cross section different from that of FIG. 6C, the bonded substrate 41 and the insulating film 42 are removed at locations corresponding to the first and second lead wirings 51 b and 52 b in the first and second wiring parts 51 and 52. Thus, two through holes 70a are formed. Then, an insulating film 70b such as TEOS is formed on the wall surface of each through hole 70a. At this time, the insulating film 43 is composed of an insulating film formed on the side of the bonded substrate 41 opposite to the first substrate 10 side. That is, the insulating film 43 and the insulating film 70b are formed in the same process. Thereafter, the insulating film 70b formed at the bottom of each through-hole 70a is removed, and the first and second lead-out wirings 51b and 52b in the first and second wiring parts 51 and 52, and the pad part in each through-hole 70a. 53 and 54 are exposed.

次に、図６（ｄ）に示されるように、各貫通孔７０ａにスパッタ法や蒸着法等によって金属膜を配置して各貫通電極７０ｃを形成する。そして、各貫通電極７０ｃと第１、第２配線部５１、５２における第１、第２引き出し配線５１ｂ、５２ｂ、パッド部５３、５４とをそれぞれ電気的に接続する。その後、絶縁膜４３上の金属膜をパターニングしてパッド部７０ｄを形成することで貫通電極部７０を構成する。   Next, as shown in FIG. 6D, a metal film is disposed in each through hole 70a by a sputtering method, a vapor deposition method, or the like to form each through electrode 70c. Then, each through electrode 70c is electrically connected to the first and second lead wires 51b and 52b and the pad portions 53 and 54 in the first and second wiring portions 51 and 52, respectively. Thereafter, the through electrode portion 70 is formed by patterning the metal film on the insulating film 43 to form the pad portion 70d.

なお、この工程における金属膜は、図４（ｅ）および図５（ｂ）に工程において形成した金属膜と同じ材料が用いられ、本実施形態ではアルミニウムが用いられる。   The metal film in this step is made of the same material as the metal film formed in the steps shown in FIGS. 4E and 5B, and aluminum is used in this embodiment.

また、絶縁膜４３にコンタクトホール４３ａを形成すると共にコンタクトホール４３ａに金属膜を埋め込んでコンタクト部８０を形成することにより、上記加速度センサが製造される。   The acceleration sensor is manufactured by forming the contact hole 43a in the insulating film 43 and embedding the metal film in the contact hole 43a to form the contact portion 80.

なお、上記では、１つの加速度センサの製造方法について説明したが、ウェハ状の第１、第２基板１０、４０を用意し、これらを接合した後にダイシングカットしてチップ単位に分割するようにしてもよい。   In addition, although the manufacturing method of one acceleration sensor was demonstrated above, the wafer-like 1st, 2nd board | substrates 10 and 40 are prepared, and after dicing and cutting these, it divides | segments into a chip unit. Also good.

以上説明したように、本実施形態では、第１基板１０のパッド部２５、３１と第２基板４０のパッド部５３、５４とは同じ金属材料であるアルミニウムで構成されている。このため、第１基板１０のパッド部２５、３１と第２基板４０のパッド部５３、５４との間には反応層が形成されず、接合強度がばらつくことを抑制でき、信頼性を向上できる。   As described above, in the present embodiment, the pad portions 25 and 31 of the first substrate 10 and the pad portions 53 and 54 of the second substrate 40 are made of aluminum, which is the same metal material. For this reason, a reaction layer is not formed between the pad portions 25 and 31 of the first substrate 10 and the pad portions 53 and 54 of the second substrate 40, so that it is possible to suppress a variation in bonding strength and improve reliability. .

また、貫通電極７０ｃは、第１、第２配線部５１、５２およびパッド部５３、５４と同じ金属材料であるアルミニウムで構成されている。このため、貫通電極７０ｃと第１、第２配線部５１、５２およびパッド部５３、５４との間に反応層が形成されず、貫通電極７０ｃと第１、第２配線部５１、５２およびパッド部５３、５４との接合強度がばらつくことを抑制できる。特に、パッド部５３、５４と接続される貫通電極７０ｃは、第１基板１０のパッド部２５、３１と共に積層構造となるが、これらを全て同じ金属材料で構成することによって接合強度がばらつくことを抑制でき、信頼性を向上できる。   The through electrode 70 c is made of aluminum, which is the same metal material as the first and second wiring parts 51 and 52 and the pad parts 53 and 54. Therefore, no reaction layer is formed between the through electrode 70c, the first and second wiring parts 51 and 52, and the pad parts 53 and 54, and the through electrode 70c, the first and second wiring parts 51 and 52, and the pad. It is possible to prevent the bonding strength with the portions 53 and 54 from varying. In particular, the through electrode 70c connected to the pad portions 53 and 54 has a laminated structure together with the pad portions 25 and 31 of the first substrate 10, but the bonding strength varies depending on the fact that they are all made of the same metal material. It can be suppressed and reliability can be improved.

さらに、第１基板１０の封止部３２と第２基板４０の封止部５５とは同じ金属材料であるアルミニウムで構成されている。このため、第１基板１０の封止部３２と第２基板４０の封止部５５との間に合金層が形成されることも抑制できる。   Further, the sealing portion 32 of the first substrate 10 and the sealing portion 55 of the second substrate 40 are made of aluminum, which is the same metal material. For this reason, it can also be suppressed that an alloy layer is formed between the sealing portion 32 of the first substrate 10 and the sealing portion 55 of the second substrate 40.

（他の実施形態）
本発明は上記した実施形態に限定されるものではなく、特許請求の範囲に記載した範囲内において適宜変更が可能である。 (Other embodiments)
The present invention is not limited to the embodiment described above, and can be appropriately changed within the scope described in the claims.

例えば、上記第１実施形態では、ｚ軸方向の加速度を検出する加速度センサを例に挙げて説明したが、ｘ軸方向またはｙ軸方向の加速度を検出する加速度センサに本発明を適用することもできる。この場合、第１基板１０に、加速度に応じて変位する可動電極を有する可動部２０と、可動電極と対向する固定電極を有する固定部が形成される。また、本発明の物理量センサを角速度センサ等に適用することもできる。   For example, in the first embodiment, the acceleration sensor that detects the acceleration in the z-axis direction has been described as an example. However, the present invention may be applied to an acceleration sensor that detects the acceleration in the x-axis direction or the y-axis direction. it can. In this case, a movable portion 20 having a movable electrode that is displaced according to acceleration and a fixed portion having a fixed electrode facing the movable electrode are formed on the first substrate 10. The physical quantity sensor of the present invention can also be applied to an angular velocity sensor or the like.

そして、上記第１実施形態において、第１基板１０のパッド部３１および第２基板４０のパッド部５４は形成されていなくてもよい。   And in the said 1st Embodiment, the pad part 31 of the 1st board | substrate 10 and the pad part 54 of the 2nd board | substrate 40 do not need to be formed.

また、上記第１実施形態において、第１基板１０のパッド部２５、３１および封止部３２、第２基板４０の第１、第２配線部５１、５２、パッド部５３、５４は、同じ金属材料で構成されていればよく、例えば、Ａｕ等で構成されていてもよい。   In the first embodiment, the pad portions 25 and 31 and the sealing portion 32 of the first substrate 10, the first and second wiring portions 51 and 52, and the pad portions 53 and 54 of the second substrate 40 are made of the same metal. What is necessary is just to be comprised with the material, for example, you may be comprised with Au etc.

さらに、上記第１実施形態において、第１、第２配線部５１、５２は第１、第２引き出し配線５１ｂ、５２ｂを有していなくてもよい。つまり、貫通電極７０ｃを第１、第２固定電極５１ａ、５２ａと直接接続するようにしてもよい。   Furthermore, in the said 1st Embodiment, the 1st, 2nd wiring parts 51 and 52 do not need to have the 1st and 2nd extraction wirings 51b and 52b. That is, the through electrode 70c may be directly connected to the first and second fixed electrodes 51a and 52a.

１０ 第１基板
１０ａ 一面
２５ パッド部（第１基板用パッド部）
４０ 第２基板
４０ａ 一面
５３ パッド部（第２基板用パッド部）
６０ センシング部
９０ 気密室
10 first substrate 10a one side 25 pad portion (first substrate pad portion)
40 Second substrate 40a One side 53 Pad portion (second substrate pad portion)
60 Sensing part 90 Airtight room

Claims (3)

一面（１０ａ）を有する第１基板（１０）と、
一面（４０ａ）を有し、当該一面が前記第１基板の一面と対向する状態で前記第１基板と接合される第２基板（４０）と、を備え、
前記第１、第２基板の間に気密室（９０）が形成され、前記気密室に物理量に応じたセンサ信号を出力するセンシング部（６０）が配置された物理量センサにおいて、
前記第１基板の一面には、前記センシング部と電気的に接続される第１基板用パッド部（２５）が形成され、
前記第２基板の一面には、前記第１基板用パッド部と接合される第２基板用パッド部（５３）が形成され、
前記第１基板用パッド部と前記第２基板用パッド部とは、同じ金属材料を用いて構成されて金属接合されており、
前記第２基板には、厚さ方向に貫通して前記第２基板用パッド部に達する貫通孔（７０ａ）に前記第２基板用パッド部と電気的に接続され、かつ前記第１、第２基板用パッド部と同じ金属材料を用いて構成された貫通電極（７０ｃ）が配置されており、
前記第１基板用パッド部、前記第２基板用パッド部、前記貫通電極の一部が積層されていることを特徴とする物理量センサ。 A first substrate (10) having one surface (10a);
A second substrate (40) having one surface (40a) and bonded to the first substrate in a state where the one surface faces one surface of the first substrate;
In the physical quantity sensor in which an airtight chamber (90) is formed between the first and second substrates, and a sensing unit (60) that outputs a sensor signal corresponding to the physical quantity is arranged in the airtight chamber,
A first substrate pad portion (25) electrically connected to the sensing portion is formed on one surface of the first substrate,
A second substrate pad portion (53) bonded to the first substrate pad portion is formed on one surface of the second substrate,
The first substrate pad portion and the second substrate pad portion are configured using the same metal material and are metal-bonded .
The second substrate is electrically connected to the second substrate pad portion through a through hole (70a) that penetrates in the thickness direction and reaches the second substrate pad portion, and the first and second substrates. A through electrode (70c) configured using the same metal material as the pad portion for the substrate is disposed,
A physical quantity sensor, wherein the first substrate pad portion, the second substrate pad portion, and a part of the through electrode are laminated . 前記第１基板の一面には、前記一面の法線方向から視たとき、前記センシング部を囲む枠状の第１基板用封止部（３２）が形成され、
前記第２基板の一面には、前記第１基板用封止部と金属接合され、前記第１基板用封止部と同じ金属材料を用いて構成された枠状の第２基板用封止部（５５）が形成されており、
前記気密室は、前記第１、第２基板用封止部が接合されることで前記第１基板と前記第２基板との間に形成されていることを特徴とする請求項１に記載の物理量センサ。 On one surface of the first substrate, when viewed from the normal direction of the one surface, a frame-shaped first substrate sealing portion (32) surrounding the sensing portion is formed,
A frame-shaped second substrate sealing portion that is metal-bonded to the first substrate sealing portion on one surface of the second substrate and is configured using the same metal material as the first substrate sealing portion. (55) is formed,
The airtight chamber, according to claim 1, wherein the first, sealing portion for the second substrate are formed between the first substrate and the second substrate by being joined Physical quantity sensor. 前記第１基板には、前記一面側に前記一面に対する法線方向への加速度に応じて変位する可動部（２０）が形成され、
前記第２基板には、前記可動部と対向する部分に固定電極（５１ａ、５２ａ）が形成されており、
前記センシング部は、前記可動部および前記固定電極にて構成されていることを特徴とする請求項１または２に記載の物理量センサ。 In the first substrate, a movable portion (20) that is displaced in accordance with acceleration in a normal direction relative to the one surface is formed on the one surface side,
On the second substrate, fixed electrodes (51a, 52a) are formed in a portion facing the movable part,
The sensing unit, the physical quantity sensor according to claim 1 or 2, characterized in that it is constituted by the movable part and the fixed electrode.
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