JP5987314B2 - Printed wiring board - Google Patents

Printed wiring board Download PDF

Info

Publication number
JP5987314B2
JP5987314B2 JP2011286240A JP2011286240A JP5987314B2 JP 5987314 B2 JP5987314 B2 JP 5987314B2 JP 2011286240 A JP2011286240 A JP 2011286240A JP 2011286240 A JP2011286240 A JP 2011286240A JP 5987314 B2 JP5987314 B2 JP 5987314B2
Authority
JP
Japan
Prior art keywords
hole
conductor
wiring board
printed wiring
core substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011286240A
Other languages
Japanese (ja)
Other versions
JP2013135168A (en
Inventor
俊樹 古谷
俊樹 古谷
剛士 古澤
剛士 古澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ibiden Co Ltd
Original Assignee
Ibiden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibiden Co Ltd filed Critical Ibiden Co Ltd
Priority to JP2011286240A priority Critical patent/JP5987314B2/en
Publication of JP2013135168A publication Critical patent/JP2013135168A/en
Application granted granted Critical
Publication of JP5987314B2 publication Critical patent/JP5987314B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Description

本発明は、コア基板に樹脂絶縁層と導体層とが交互に積層されて成り、チップを実装するためのプリント配線板に関するものである。 The present invention relates to a printed wiring board for mounting a chip on which a resin insulating layer and a conductor layer are alternately laminated on a core substrate.

ロジックチップ等を搭載するパッケージ用プリント配線板には、ロジックチップで発生する熱を効率的に逃がすことが求められる。特許文献1には、半導体素子を搭載する多層配線板の放熱性を向上させるため、コア基板に金属板を用いる構成が提案されている。 A printed wiring board for a package on which a logic chip or the like is mounted is required to efficiently release heat generated in the logic chip. Patent Document 1 proposes a configuration in which a metal plate is used for a core substrate in order to improve heat dissipation of a multilayer wiring board on which a semiconductor element is mounted.

特開2005−72064号公報JP 2005-72064 A

しかしながら、特許文献1は、金属板から成るコア基板により水平方向への放熱性を向上させることができるが、搭載したチップ側から実装される外部接続基板側への垂直方向の放熱性を改善する効果は薄いと考えられる。また、金属板から成るコア基板により、基板全体の銅占有率が高く、樹脂絶縁層と導体層とを交互に積層すると、プリント配線板に反りが生じやすいと推測される。 However, Patent Document 1 can improve the heat dissipation in the horizontal direction by the core substrate made of a metal plate, but improves the heat dissipation in the vertical direction from the mounted chip side to the external connection substrate side to be mounted. The effect is considered to be weak. In addition, the core substrate made of a metal plate has a high copper occupancy ratio of the entire substrate, and it is assumed that the printed wiring board is likely to warp when the resin insulating layers and the conductor layers are alternately laminated.

本発明は、上述した課題を解決するためになされたものであり、その目的とするところは、垂直方向への放熱性の高いプリント配線板を提供することにある。 The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a printed wiring board having high heat dissipation in the vertical direction.

第1面と該第1面とは反対側の第2面を有するコア基板と、
前記第1面から前記第2面方向に前記コア基板を貫通するスルーホール導体用貫通孔に銅めっきを充填して成るスルーホール導体と、
前記第1面から前記第2面方向に前記コア基板を貫通する貫通孔と、
前記貫通孔に収容される放熱部材と、
前記コア基板に樹脂絶縁層と導体層とが交互に積層された配線積層部とを備えるプリント配線板であって:
前記放熱部材は、プリント配線板の搭載されるチップの直下の領域に配置され、前記放熱部材の表裏両面にビア導体が接続され、
前記スルーホール導体は、プリント配線板の搭載されるチップの直下の領域に配置され、前記スルーホール導体の前記第1面側と前記第2面側にビア導体が接続され
前記放熱部材が収容される前記貫通孔に隣接する貫通孔に電子部品を収容することを技術的特徴とする。
A core substrate having a first surface and a second surface opposite to the first surface;
A through hole conductor formed by filling a through hole for a through hole conductor penetrating the core substrate from the first surface to the second surface direction with copper plating;
A through hole penetrating the core substrate from the first surface to the second surface direction;
A heat dissipating member accommodated in the through hole;
A printed wiring board comprising a wiring laminated portion in which resin insulating layers and conductor layers are alternately laminated on the core substrate:
The heat dissipating member is disposed in a region immediately below the chip on which the printed wiring board is mounted, and via conductors are connected to both the front and back surfaces of the heat dissipating member,
The through-hole conductor is disposed in a region immediately below a chip on which a printed wiring board is mounted, and via conductors are connected to the first surface side and the second surface side of the through-hole conductor ,
A technical feature is that an electronic component is accommodated in a through hole adjacent to the through hole in which the heat dissipation member is accommodated .

本願発明のプリント配線板は、コア基板の貫通孔に放熱部材を備えるため、垂直方向の放熱性が高く、実装したチップの熱を、実装される外部接続基板側へ効率的に逃がすことができる。貫通孔内のみに放熱部材を収容するため、プリント配線板全体の銅占有率が低く、樹脂絶縁層と導体層とが交互に積層された配線積層部に反りが生じ難い。 Since the printed wiring board of the present invention includes a heat dissipation member in the through hole of the core substrate, the heat dissipation in the vertical direction is high, and the heat of the mounted chip can be efficiently released to the mounted external connection substrate side. . Since the heat radiating member is accommodated only in the through hole, the copper occupation ratio of the entire printed wiring board is low, and the wiring laminated portion in which the resin insulating layers and the conductor layers are alternately laminated hardly warps.

本発明の第1実施形態に係る半田バンプを有するプリント配線板の製造方法を示す工程図。FIG. 4 is a process diagram showing a method for manufacturing a printed wiring board having solder bumps according to the first embodiment of the present invention. 第1実施形態のプリント配線板の製造方法を示す工程図。Process drawing which shows the manufacturing method of the printed wiring board of 1st Embodiment. 第1実施形態のプリント配線板の製造方法を示す工程図。Process drawing which shows the manufacturing method of the printed wiring board of 1st Embodiment. 第1実施形態のプリント配線板の製造方法を示す工程図。Process drawing which shows the manufacturing method of the printed wiring board of 1st Embodiment. 第1実施形態のプリント配線板の製造方法を示す工程図。Process drawing which shows the manufacturing method of the printed wiring board of 1st Embodiment. 第1実施形態の半田バンプを有するプリント配線板の断面図。Sectional drawing of the printed wiring board which has the solder bump of 1st Embodiment. 第1実施形態のプリント配線板の応用例。The application example of the printed wiring board of 1st Embodiment. 第2実施形態のプリント配線板の断面図。Sectional drawing of the printed wiring board of 2nd Embodiment. 第2実施形態の第1改変例に係るプリント配線板の断面図。Sectional drawing of the printed wiring board which concerns on the 1st modification of 2nd Embodiment. 第2実施形態の第2改変例に係るプリント配線板の平面図。The top view of the printed wiring board which concerns on the 2nd modification of 2nd Embodiment.

[第1実施形態]
本発明の第1実施形態に係る半田バンプを有するプリント配線板100の断面が図6に示される。そのプリント配線板100では、銅製の放熱ブロック80がコア基板30に内蔵され、該コア基板30の第1面と第2面に1層のビルドアップ層が形成されている。
[First embodiment]
FIG. 6 shows a cross section of the printed wiring board 100 having solder bumps according to the first embodiment of the present invention. In the printed wiring board 100, a copper heat dissipation block 80 is built in the core substrate 30, and one buildup layer is formed on the first surface and the second surface of the core substrate 30.

コア基板30は第1の放熱ブロック80を収容するための貫通孔(開口)20を有する絶縁性基材30Mと絶縁性基材の主面(F)に形成されている第1の導体層34Aと絶縁性基材の副面(S)に形成されている第2の導体層34Bを有する。主面と副面は対向する面である。貫通孔(開口)20は絶縁性基材を貫通している。さらに、コア基板は、第1の導体層と第2の導体層とを接続しているスルーホール導体36を有している。コア基板の第1面(FF)は第1導体層の上面でありコア基板の第2面(SS)は第2導体層の上面である。コア基板に形成されている貫通孔20に放熱ブロック80が収容されている。放熱ブロックは主面と主面と反対側の副面を有している。放熱ブロックの主面上にビア導体60Mが接続され、副面上にビア導体60Dが接続されている。 The core substrate 30 includes an insulating base material 30M having a through hole (opening) 20 for accommodating the first heat dissipation block 80, and a first conductor layer 34A formed on the main surface (F) of the insulating base material. And a second conductor layer 34B formed on the sub-surface (S) of the insulating substrate. The main surface and the sub surface are opposing surfaces. The through hole (opening) 20 penetrates the insulating base material. Furthermore, the core substrate has a through-hole conductor 36 that connects the first conductor layer and the second conductor layer. The first surface (FF) of the core substrate is the upper surface of the first conductor layer, and the second surface (SS) of the core substrate is the upper surface of the second conductor layer. A heat dissipation block 80 is accommodated in the through hole 20 formed in the core substrate. The heat dissipation block has a main surface and a sub surface opposite to the main surface. A via conductor 60M is connected to the main surface of the heat dissipation block, and a via conductor 60D is connected to the sub surface.

該貫通孔20には充填樹脂50αが充填されている。スルーホール導体36は、絶縁性基材に形成されているスルーホール導体用の貫通孔31を銅めっきで充填することにより形成される。スルーホール導体用の貫通孔31は、絶縁性基材の主面側に形成されている第1開口部31aと、絶縁性基材の副面側に形成されている第2開口部31bで形成されている。第1開口部31aは主面から副面に向かってテーパしている。第2開口部28aは副面から主面に向かってテーパしている。該第1開口部31aと該第2開口部31bはコア基板内部で繋がっている。 The through hole 20 is filled with a filling resin 50α. The through-hole conductor 36 is formed by filling the through-hole 31 for the through-hole conductor formed in the insulating base material with copper plating. The through hole 31 for the through-hole conductor is formed by a first opening 31a formed on the main surface side of the insulating base material and a second opening 31b formed on the sub surface side of the insulating base material. Has been. The first opening 31a tapers from the main surface toward the sub surface. The second opening 28a tapers from the sub surface toward the main surface. The first opening 31a and the second opening 31b are connected inside the core substrate.

絶縁性基材30Mの主面Fと第1の導体層と放熱ブロックの主面上に上側のビルドアップ層が形成されている。上側のビルドアップ層は1層であって、絶縁層50Aと絶縁層上の導体層58Aと異なる導体層を接続し絶縁層50Aを貫通するビア導体60A、60Mで形成されている。図6では、ビア導体60Aはコア基板の導体層34Aと絶縁層上の導体層58Aやスルーホール導体と絶縁層上に形成されている導体層58Aを接続している。また、ビア導体(上側の接続ビア導体)60Mは放熱ブロック(放熱ブロック)の主面と導体層58Aを接続している。 An upper buildup layer is formed on the main surface F of the insulating base material 30M, the first conductor layer, and the main surface of the heat dissipation block. The upper buildup layer is a single layer, and is formed of via conductors 60A and 60M that connect the insulating layer 50A and a conductor layer different from the conductor layer 58A on the insulating layer and penetrate the insulating layer 50A. In FIG. 6, the via conductor 60 </ b> A connects the conductor layer 34 </ b> A of the core substrate to the conductor layer 58 </ b> A on the insulating layer and the through-hole conductor and the conductor layer 58 </ b> A formed on the insulating layer. The via conductor (upper connection via conductor) 60M connects the main surface of the heat dissipation block (heat dissipation block) and the conductor layer 58A.

絶縁性基材30Mの副面Sと第2の導体層と放熱ブロックの副面上に下側のビルドアップ層が形成されている。下側のビルドアップ層は1層であって、絶縁層50Bと絶縁層上の導体層58Bと異なる導体層を接続し絶縁層50Bを貫通するビア導体60B、60Dで形成されている。図6では、ビア導体60Bはコア基板の導体層34Bと絶縁層上の導体層58Bやスルーホール導体と絶縁層上に形成されている導体層58Bを接続している。また、ビア導体(下側の接続ビア導体)60Dは放熱ブロック(放熱ブロック)の副面と導体層58Bを接続している。 A lower buildup layer is formed on the sub surface S of the insulating base material 30M, the second conductor layer, and the sub surface of the heat dissipation block. The lower buildup layer is a single layer, and is formed of via conductors 60B and 60D that connect the insulating layer 50B and a conductive layer different from the conductive layer 58B on the insulating layer and penetrate the insulating layer 50B. In FIG. 6, the via conductor 60B connects the conductor layer 34B of the core substrate and the conductor layer 58B on the insulating layer, and the through-hole conductor and the conductor layer 58B formed on the insulating layer. A via conductor (lower connection via conductor) 60D connects the sub-surface of the heat dissipation block (heat dissipation block) and the conductor layer 58B.

上側と下側のビルドアップ層上に導体層58A、58Bやビア導体、接続ビア導体を露出する開口71を有するソルダーレジスト層70が形成されている。開口71から露出する導体(パッド)上に半田バンプ76U、76Dが形成されている。
上側のビルドアップ層上のソルダーレジスト層はICチップを搭載するための領域を有している。図7に示すように上側のビルドアップ層上に形成されている半田バンプ76Uを介してICチップ90のパッド92に接続され、プリント配線板にICチップ90が実装される。下側のビルドアップ層上に形成されている半田バンプ76Dを介してマザーボードのパッド96に接続され、プリント配線板100がマザーボード98に搭載される。
Solder resist layers 70 having openings 71 exposing the conductor layers 58A and 58B, the via conductors, and the connection via conductors are formed on the upper and lower buildup layers. Solder bumps 76U and 76D are formed on the conductor (pad) exposed from the opening 71.
The solder resist layer on the upper buildup layer has a region for mounting an IC chip. As shown in FIG. 7, the IC chip 90 is mounted on a printed wiring board by being connected to pads 92 of the IC chip 90 via solder bumps 76U formed on the upper buildup layer. The printed wiring board 100 is mounted on the motherboard 98 by being connected to the pads 96 of the motherboard via solder bumps 76D formed on the lower buildup layer.

第1実施形態のプリント配線板は、コア基板30の貫通孔20に放熱ブロック80を備えるため、垂直方向の放熱性が高く、実装したICチップ90の熱を、実装されるマザーボード98側へ効率的に逃がすことができる。貫通孔20内のみに銅製の放熱ブロックを収容するため、プリント配線板全体の銅占有率が低く、樹脂絶縁層と導体層とが交互に積層されたビルドアップ層に反りが生じ難い。 Since the printed wiring board of the first embodiment includes the heat dissipation block 80 in the through hole 20 of the core substrate 30, the heat dissipation in the vertical direction is high, and the heat of the mounted IC chip 90 is efficiently transferred to the mounted motherboard 98 side. Can be escaped. Since the copper heat dissipation block is accommodated only in the through hole 20, the copper occupation ratio of the entire printed wiring board is low, and the buildup layer in which the resin insulating layers and the conductor layers are alternately stacked hardly warps.

ここで、コア基板の厚みは70〜250μmである。放熱ブロックの厚みはコア基板以下であって、体積は0.2mm3以上0.4mm3以下であることが望ましい。体積が0.2mm3未満では、放熱性が低下する。一方、0.4mm3を越えると、コア基板との熱膨張係数の違いから反りの原因と成る可能性がでる。 Here, the thickness of the core substrate is 70 to 250 μm. The thickness of the heat dissipation block is preferably equal to or less than the core substrate, and the volume is preferably 0.2 mm 3 or more and 0.4 mm 3 or less. If the volume is less than 0.2 mm 3, the heat dissipation is reduced. On the other hand, if it exceeds 0.4 mm 3, there is a possibility of causing warpage due to the difference in thermal expansion coefficient with the core substrate.

放熱ブロックに接続される主面側のビア導体60M、副面側のビア導体60Dは、グランド線を構成している。これにより、放熱性と共に、グランドラインの容量を増大させ、ICチップへの電力供給を安定させている。 The via conductor 60M on the main surface side and the via conductor 60D on the sub surface side connected to the heat dissipation block constitute a ground line. This increases the capacity of the ground line as well as heat dissipation, and stabilizes the power supply to the IC chip.

主面側のビア導体60Mの数は、副面側のビア導体60Dの数よりも多い。熱源であるICチップ側のビア導体60Mの数を増やすことで、放熱性を高めている。 The number of via conductors 60M on the main surface side is larger than the number of via conductors 60D on the sub surface side. Heat dissipation is enhanced by increasing the number of via conductors 60M on the IC chip side that are heat sources.

第1実施形態のプリント配線板100の製造方法が図1〜図5に示される。
(1)エポキシ樹脂またはBT(ビスマレイミドトリアジン)樹脂とガラスクロスなどの補強材からなる絶縁性基材30Mの両面に15μmの銅箔32がラミネートされている銅張積層板20Mが出発材料である。絶縁性基材30Mは主面と主面と反対側の副面とを有し、その厚さは、70〜250μmである。70μmより薄いと絶縁性基材の強度が低すぎる。厚みが250μmを越えると、放熱ブロックをビア導体で挟むことが難しくなる。また、レーザによるテーパ形状のスルーホール導体用の貫通孔の形成が困難である。まず、銅箔32の表面に黒化処理が施される(図1(A))。
A method of manufacturing the printed wiring board 100 of the first embodiment is shown in FIGS.
(1) A copper-clad laminate 20M in which a 15 μm copper foil 32 is laminated on both surfaces of an insulating base material 30M made of a reinforcing material such as epoxy resin or BT (bismaleimide triazine) resin and glass cloth is a starting material. . The insulating base material 30M has a main surface and a sub surface opposite to the main surface, and the thickness thereof is 70 to 250 μm. If it is thinner than 70 μm, the strength of the insulating substrate is too low. When the thickness exceeds 250 μm, it becomes difficult to sandwich the heat dissipation block with via conductors. In addition, it is difficult to form a through hole for a tapered through-hole conductor by laser. First, a blackening process is performed on the surface of the copper foil 32 (FIG. 1A).

(2)絶縁性基材30Mの主面F側からCO2レーザが照射され、主面F側に主面から副面Sに向けて細くなっている第1開口部31aが形成される(図1(B))。第1開口部31aは、主面Fから副面Sに向かってテーパしている。 (2) The CO2 laser is irradiated from the main surface F side of the insulating base material 30M, and the first opening 31a that is narrowed from the main surface toward the sub surface S is formed on the main surface F side (FIG. 1). (B)). The first opening 31 a is tapered from the main surface F toward the sub surface S.

(3)絶縁性基材30Mの副面S側からCO2レーザが照射され、副面S側に副面から主面Fに向けて細くなっている第2開口部31bが形成される。第1開口部と第2開口部でスルーホール導体用の貫通孔31が形成される(図1(C))。第2開口部31bは、副面Sから主面Fに向かってテーパしている。 (3) The CO2 laser is irradiated from the sub surface S side of the insulating base material 30M, and the second opening 31b that is narrowed from the sub surface toward the main surface F is formed on the sub surface S side. A through hole 31 for a through hole conductor is formed by the first opening and the second opening (FIG. 1C). The second opening 31 b is tapered from the sub surface S toward the main surface F.

(4)無電解めっき処理により貫通孔の内壁と銅箔32上に無電解めっき膜33が形成される(図1(D))。更に、電解めっき処理により無電解めっき膜33上に電解めっき膜37が形成され、貫通孔内にスルーホール導体36が形成される。貫通孔31が電解めっき膜で充填されている。貫通孔を充填しているめっき膜からなるスルーホール導体36が形成される(図1(E))。 (4) The electroless plating film 33 is formed on the inner wall of the through hole and the copper foil 32 by the electroless plating process (FIG. 1D). Furthermore, an electrolytic plating film 37 is formed on the electroless plating film 33 by electrolytic plating treatment, and a through-hole conductor 36 is formed in the through hole. The through hole 31 is filled with an electrolytic plating film. A through-hole conductor 36 made of a plating film filling the through-hole is formed (FIG. 1E).

(5)絶縁性基材30M上の電解めっき膜37上に所定パターンのエッチングレジスト35が形成される(図1(F))。 (5) An etching resist 35 having a predetermined pattern is formed on the electrolytic plating film 37 on the insulating substrate 30M (FIG. 1F).

(6)エッチングレジストから露出する電解めっき膜37、無電解めっき膜33、銅箔32が除去される。その後、エッチングレジストが除去され導体層34A、34B及びスルーホール導体36が形成される(図2(A))。導体層34A、34Bは導体回路やスルーホール導体のランドを含む。 (6) The electrolytic plating film 37, the electroless plating film 33, and the copper foil 32 exposed from the etching resist are removed. Thereafter, the etching resist is removed to form conductor layers 34A and 34B and a through-hole conductor 36 (FIG. 2A). The conductor layers 34A and 34B include conductor circuits and lands of through-hole conductors.

(7)絶縁性基材30Mの中央部にコンデンサなどの放熱ブロックを収容するための貫通孔(開口)20がレーザにより形成される。コア基板30が完成する(図2(B))。 (7) A through-hole (opening) 20 for accommodating a heat dissipation block such as a capacitor is formed in the center of the insulating base material 30M by a laser. The core substrate 30 is completed (FIG. 2B).

(8)貫通孔20が塞がれるように、PETフィルムからなるテープ94がコア基板の第1面FFに貼り付けられる(図2(C))。 (8) The tape 94 made of a PET film is attached to the first surface FF of the core substrate so that the through-hole 20 is closed (FIG. 2C).

(9)コア基板の第2面側からマウンターで放熱ブロック80が搭載される(図2(D))。ここで、貫通孔20により露出するテープ94上に樹脂膜が形成され、放熱ブロックを樹脂膜上に固定させることも可能である。 (9) The heat dissipation block 80 is mounted by a mounter from the second surface side of the core substrate (FIG. 2D). Here, a resin film can be formed on the tape 94 exposed by the through-hole 20, and the heat dissipation block can be fixed on the resin film.

(10)貫通孔20が塞がれるように、コア基板30の第2面SS上にB−ステージのプリプレグなどの樹脂フィルム50b及び銅箔49が積層される(図2(E))。加熱プレスにより、樹脂フィルム50bから樹脂と無機粒子が貫通孔20内にしみ出て、貫通孔20内が樹脂50αで充填される。樹脂フィルム50bは樹脂とシリカなどの無機粒子を含む。樹脂フィルムは無機粒子以外にガラスクロスなどの補強材を含んでも良いし含まなくてもよい。樹脂フィルムが補強材を含む場合、絶縁層の熱膨張係数と放熱ブロックの熱膨張係数が近くなる。樹脂フィルムが補強材を含まない場合、加熱プレスによる放熱ブロックのダメージを小さくすることができる。 (10) A resin film 50b such as a B-stage prepreg and a copper foil 49 are laminated on the second surface SS of the core substrate 30 so as to close the through hole 20 (FIG. 2E). By the heat press, the resin and the inorganic particles ooze out from the resin film 50b into the through hole 20, and the through hole 20 is filled with the resin 50α. The resin film 50b includes a resin and inorganic particles such as silica. The resin film may or may not contain a reinforcing material such as glass cloth in addition to the inorganic particles. When the resin film includes a reinforcing material, the thermal expansion coefficient of the insulating layer and the thermal expansion coefficient of the heat dissipation block are close to each other. When the resin film does not include a reinforcing material, damage to the heat dissipation block due to the heating press can be reduced.

貫通孔を充填している樹脂と樹脂フィルムの樹脂を硬化させることで、貫通孔20内に第1の充填樹脂50αが形成され、絶縁性基材の副面と第2の導体層と放熱ブロック上に絶縁層50Bが形成される。絶縁層50Bは下側のビルドアップ層の層間樹脂絶縁層である。 The first filling resin 50α is formed in the through hole 20 by curing the resin filling the through hole and the resin film, and the sub surface of the insulating substrate, the second conductor layer, and the heat dissipation block. An insulating layer 50B is formed thereon. The insulating layer 50B is an interlayer resin insulating layer of the lower buildup layer.

(11)テープ除去後(図3(A))、コア基板30の第1面FF上にB−ステージのプリプレグなどの樹脂フィルム、銅箔49が積層される。樹脂フィルムの樹脂を硬化させることで、樹脂フィルムから絶縁性基材の主面と第1の導体層、放熱ブロック上に絶縁層50Aが形成される(図3(B))。絶縁層50Aは上側のビルドアップ層の層間樹脂絶縁層である。 (11) After removing the tape (FIG. 3A), a resin film such as a B-stage prepreg and a copper foil 49 are laminated on the first surface FF of the core substrate 30. By curing the resin of the resin film, an insulating layer 50A is formed on the main surface of the insulating base, the first conductor layer, and the heat dissipation block from the resin film (FIG. 3B). The insulating layer 50A is an interlayer resin insulating layer of the upper buildup layer.

(12)絶縁層50Aに放熱ブロックの主面に至る開口51Aが形成される。それ以外、導体層やスルーホール導体に至る開口51が形成される。絶縁層50Bに放熱ブロック副面に至る開口51Bが形成される。それ以外、導体層やスルーホール導体に至る開口51が形成される(図3(C)参照)。過マンガン酸塩などの酸化剤で開口51、51A、51Bの内部が洗浄される。また、絶縁層50A、50Bの表面に粗面が設けられる(図示せず)。 (12) An opening 51A reaching the main surface of the heat dissipation block is formed in the insulating layer 50A. In addition, an opening 51 reaching the conductor layer and the through-hole conductor is formed. An opening 51B reaching the heat radiation block sub-surface is formed in the insulating layer 50B. In addition, an opening 51 reaching the conductor layer and the through-hole conductor is formed (see FIG. 3C). The inside of the openings 51, 51A, 51B is cleaned with an oxidizing agent such as permanganate. In addition, rough surfaces are provided on the surfaces of the insulating layers 50A and 50B (not shown).

(13)絶縁層50A、50Bの表面と開口51、51A、51Bの内壁に無電解めっき膜52が形成される(図3(D))。 (13) Electroless plating film 52 is formed on the surfaces of insulating layers 50A and 50B and the inner walls of openings 51, 51A and 51B (FIG. 3D).

(14)無電解めっき膜52上にめっきレジスト54が形成される(図4(A))。 (14) A plating resist 54 is formed on the electroless plating film 52 (FIG. 4A).

(15)次に、電解めっき処理により、めっきレジスト54から露出する無電解めっき膜上に電解めっき膜56が形成される(図4(B)参照)。 (15) Next, an electrolytic plating film 56 is formed on the electroless plating film exposed from the plating resist 54 by electrolytic plating (see FIG. 4B).

(16)その後、めっきレジスト54が5%NaOHで除去される。電解めっき膜間の無電解めっき膜が除去され、無電解めっき膜52と電解めっき膜56からなる導体層58(58A、58B)及びビア導体60A、60B、上側のビア導体60M、下側のビア導体60Dが形成される(図4(C))。導体層58は導体回路やビア導体のランドを含んでいる。
絶縁層と絶縁層上の導体層58と絶縁層を貫通し異なる導体層を接続するビア導体で形成される上側のビルドアップ層と下側のビルドアップ層が形成される。上側のビルドアップ層は絶縁性基材の主面上に形成されていて、下側のビルドアップ層は絶縁性基材の副面上に形成されている。
(16) Thereafter, the plating resist 54 is removed with 5% NaOH. The electroless plating film between the electroplating films is removed, and the conductor layer 58 (58A, 58B) and the via conductors 60A and 60B, the upper via conductor 60M, and the lower via formed by the electroless plating film 52 and the electrolytic plating film 56 are removed. A conductor 60D is formed (FIG. 4C). The conductor layer 58 includes lands of conductor circuits and via conductors.
An upper buildup layer and a lower buildup layer formed by the insulating layer, the conductive layer 58 on the insulating layer, and via conductors that penetrate the insulating layer and connect different conductive layers are formed. The upper buildup layer is formed on the main surface of the insulating base material, and the lower buildup layer is formed on the sub surface of the insulating base material.

(17)上側と下側のビルドアップ層上に開口71を有するソルダーレジスト層70が形成される。プリント配線板100が完成する(図5(A))。開口71から露出する導体層またはビア導体がパッドとして機能する。上側のビルドアップ層上のソルダーレジストが上側のソルダーレジスト層であり、下側のビルドアップ層上のソルダーレジストが下側のソルダーレジスト層である。 (17) A solder resist layer 70 having an opening 71 is formed on the upper and lower buildup layers. The printed wiring board 100 is completed (FIG. 5A). The conductor layer or via conductor exposed from the opening 71 functions as a pad. The solder resist on the upper buildup layer is the upper solder resist layer, and the solder resist on the lower buildup layer is the lower solder resist layer.

(18)パッド上にニッケル層72、金層74の順で金属膜が形成される(図5(B))。その他の金属膜として、スズやNi/Pd/Auが挙げられる。 (18) A metal film is formed on the pad in the order of the nickel layer 72 and the gold layer 74 (FIG. 5B). Examples of other metal films include tin and Ni / Pd / Au.

(19)この後、上側のソルダーレジスト層の開口71から露出するパッドに半田バンプ76Uが形成される。下側のソルダーレジスト層の開口71から露出するパッドに半田バンプ76Dが形成される。半田バンプを有するプリント配線板100が完成する(図6)。 (19) Thereafter, solder bumps 76U are formed on the pads exposed from the openings 71 of the upper solder resist layer. A solder bump 76D is formed on the pad exposed from the opening 71 of the lower solder resist layer. A printed wiring board 100 having solder bumps is completed (FIG. 6).

上側のビルドアップ層上に半田バンプ76Uを介してICチップ90がプリント配線板100へ実装される。そして、プリント配線板100がマザーボードに実装される(図7)。 The IC chip 90 is mounted on the printed wiring board 100 via the solder bumps 76U on the upper buildup layer. Then, the printed wiring board 100 is mounted on the motherboard (FIG. 7).

[第2実施形態]
図8は、第2実施形態のプリント配線板の断面を示す。
第2実施形態のプリント配線板では、放熱ブロック80Aを収容するための貫通孔20Aと、チップコンデンサ等の電子部品80Bとを収容する貫通孔20Bとを備える。第2実施形態では、電子部品とICチップとの距離を縮めながら、放熱性を高めることができる。
[Second Embodiment]
FIG. 8 shows a cross section of the printed wiring board of the second embodiment.
The printed wiring board of the second embodiment includes a through hole 20A for housing the heat dissipation block 80A and a through hole 20B for housing an electronic component 80B such as a chip capacitor. In the second embodiment, heat dissipation can be improved while reducing the distance between the electronic component and the IC chip.

[第2実施形態の第1改変例]
図9は、第2実施形態の第1改変例に係るプリント配線板の断面を示す。
第2実施形態の第1改変例に係るプリント配線板では、放熱ブロック80Aを収容するための貫通孔20Aと、チップコンデンサ80Bとを収容する貫通孔20Bとを備える。チップコンデンサのマイナス端子80BTと、放熱ブロック80Aとは、絶縁層50A上のグランドライン58ALを介して、同時に、絶縁層50B上のグランドライン58BLを介して接続されている。第2実施形態の第1改変例では、チップコンデンサと共に、ICチップへのグランドラインを強化することができる。
[First Modification of Second Embodiment]
FIG. 9 shows a cross section of a printed wiring board according to a first modification of the second embodiment.
The printed wiring board according to the first modification of the second embodiment includes a through hole 20A for housing the heat dissipation block 80A and a through hole 20B for housing the chip capacitor 80B. The negative terminal 80BT of the chip capacitor and the heat dissipation block 80A are simultaneously connected via the ground line 58AL on the insulating layer 50A and the ground line 58BL on the insulating layer 50B. In the first modification of the second embodiment, the ground line to the IC chip can be strengthened together with the chip capacitor.

[第2実施形態の第2改変例]
図10は、第2実施形態の第2改変例に係るプリント配線板の平面を示す。
第2実施形態の第2改変例に係るプリント配線板では、チップコンデンサ等の電子部品80Bとを収容する貫通孔20Bが中央に配置され、放熱ブロック80Aを収容するための貫通孔20Aが四隅に配置される。第2実施形態の第2改変例では、ICチップからの熱を均等に外部接続基板側に伝導させることができる。
[Second Modification of Second Embodiment]
FIG. 10 shows a plan view of a printed wiring board according to a second modification of the second embodiment.
In the printed wiring board according to the second modified example of the second embodiment, the through hole 20B for accommodating the electronic component 80B such as a chip capacitor is disposed in the center, and the through holes 20A for accommodating the heat dissipation block 80A are provided at the four corners. Be placed. In the second modification of the second embodiment, heat from the IC chip can be evenly conducted to the external connection substrate side.

上述した実施形態では、コア基板の1層のビルドアップ層が設けられる例を例示したが、本願発明の構成は、複数層のビルドアップ層が設けられる場合にも適用可能である。 In the above-described embodiment, an example in which one build-up layer of the core substrate is provided is illustrated. However, the configuration of the present invention is also applicable when a plurality of build-up layers are provided.

20 貫通孔
30 コア基板
34A、34B 導体層
50A、50B 絶縁層
58A 導体層
60A、60B、60M、60D ビア導体
80、80A 放熱ブロック
20 Through hole 30 Core substrate 34A, 34B Conductor layer 50A, 50B Insulating layer 58A Conductor layer 60A, 60B, 60M, 60D Via conductor 80, 80A Heat dissipation block

Claims (7)

第1面と該第1面とは反対側の第2面を有するコア基板と、
前記第1面から前記第2面方向に前記コア基板を貫通するスルーホール導体用貫通孔に銅めっきを充填して成るスルーホール導体と、
前記第1面から前記第2面方向に前記コア基板を貫通する貫通孔と、
前記貫通孔に収容される放熱部材と、
前記コア基板に樹脂絶縁層と導体層とが交互に積層された配線積層部とを備えるプリント配線板であって:
前記放熱部材は、プリント配線板の搭載されるチップの直下の領域に配置され、前記放熱部材の表裏両面にビア導体が接続され、
前記スルーホール導体は、プリント配線板の搭載されるチップの直下の領域に配置され、前記スルーホール導体の前記第1面側と前記第2面側にビア導体が接続され
前記放熱部材が収容される前記貫通孔に隣接する貫通孔に電子部品を収容する。
A core substrate having a first surface and a second surface opposite to the first surface;
A through hole conductor formed by filling a through hole for a through hole conductor penetrating the core substrate from the first surface to the second surface direction with copper plating;
A through hole penetrating the core substrate from the first surface to the second surface direction;
A heat dissipating member accommodated in the through hole;
A printed wiring board comprising a wiring laminated portion in which resin insulating layers and conductor layers are alternately laminated on the core substrate:
The heat dissipating member is disposed in a region immediately below the chip on which the printed wiring board is mounted, and via conductors are connected to both the front and back surfaces of the heat dissipating member,
The through-hole conductor is disposed in a region immediately below a chip on which a printed wiring board is mounted, and via conductors are connected to the first surface side and the second surface side of the through-hole conductor ,
An electronic component is accommodated in a through hole adjacent to the through hole in which the heat dissipation member is accommodated.
請求項1のプリント配線板であって:
前記放熱部材は、矩形形状の銅ブロックである。
The printed wiring board of claim 1, wherein:
The heat dissipation member is a rectangular copper block.
請求項1のプリント配線板であって:
前記放熱部材の体積は、0.2mm3以上0.4mm3以下である。
The printed wiring board of claim 1, wherein:
The volume of the heat radiating member is 0.2 mm 3 or more and 0.4 mm 3 or less.
請求項1のプリント配線板であって:
前記放熱部材に接続されるビア導体は、グランド線を構成する。
The printed wiring board of claim 1, wherein:
The via conductor connected to the heat radiating member constitutes a ground line.
請求項1のプリント配線板であって:
前記放熱部材に接続されるビア導体の数は、チップ側の面が、外部接続基板側の面よりも多い。
The printed wiring board of claim 1, wherein:
The number of via conductors connected to the heat dissipation member is greater on the chip side surface than on the external connection substrate side surface.
第1面と該第1面とは反対側の第2面を有するコア基板と、
前記第1面から前記第2面方向に前記コア基板を貫通するスルーホール導体用貫通孔に銅めっきを充填して成るスルーホール導体と、
前記第1面から前記第2面方向に前記コア基板を貫通する貫通孔と、
前記貫通孔に収容される放熱部材と、
前記コア基板に樹脂絶縁層と導体層とが交互に積層された配線積層部とを備えるプリント配線板であって:
前記放熱部材は、プリント配線板の搭載されるチップの直下の領域に配置され、前記放熱部材の表裏両面にビア導体が接続され、
前記スルーホール導体は、プリント配線板の搭載されるチップの直下の領域に配置され、前記スルーホール導体の前記第1面側と前記第2面側にビア導体が接続され、
前記放熱部材が収容される前記貫通孔に隣接する貫通孔に放熱ブロックを収容する。
A core substrate having a first surface and a second surface opposite to the first surface;
A through hole conductor formed by filling a through hole for a through hole conductor penetrating the core substrate from the first surface to the second surface direction with copper plating;
A through hole penetrating the core substrate from the first surface to the second surface direction;
A heat dissipating member accommodated in the through hole;
A printed wiring board comprising a wiring laminated portion in which resin insulating layers and conductor layers are alternately laminated on the core substrate:
The heat dissipating member is disposed in a region immediately below the chip on which the printed wiring board is mounted, and via conductors are connected to both the front and back surfaces of the heat dissipating member,
The through-hole conductor is disposed in a region immediately below a chip on which a printed wiring board is mounted, and via conductors are connected to the first surface side and the second surface side of the through-hole conductor,
A heat dissipation block is accommodated in a through hole adjacent to the through hole in which the heat dissipation member is accommodated.
請求項6のプリント配線板であって、
前記放熱部材と隣接配置された前記放熱ブロックとを、前記放熱部材に接続されるビア導体と、前記放熱ブロックに接続されたビア導体とを介して、チップ側の面の前記導体層と外部接続基板側の面の前記導体層とにより表裏で接続する。
The printed wiring board according to claim 6,
The heat dissipating block adjacent to the heat dissipating member is externally connected to the conductor layer on the chip-side surface via a via conductor connected to the heat dissipating member and a via conductor connected to the heat dissipating block. The front and back are connected by the conductor layer on the surface on the substrate side.
JP2011286240A 2011-12-27 2011-12-27 Printed wiring board Active JP5987314B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011286240A JP5987314B2 (en) 2011-12-27 2011-12-27 Printed wiring board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011286240A JP5987314B2 (en) 2011-12-27 2011-12-27 Printed wiring board

Publications (2)

Publication Number Publication Date
JP2013135168A JP2013135168A (en) 2013-07-08
JP5987314B2 true JP5987314B2 (en) 2016-09-07

Family

ID=48911656

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011286240A Active JP5987314B2 (en) 2011-12-27 2011-12-27 Printed wiring board

Country Status (1)

Country Link
JP (1) JP5987314B2 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6321979B2 (en) * 2014-01-31 2018-05-09 京セラ株式会社 Printed wiring board and manufacturing method thereof
JP6215731B2 (en) * 2014-02-27 2017-10-18 京セラ株式会社 Printed wiring board and manufacturing method thereof
JP6713187B2 (en) * 2014-03-24 2020-06-24 京セラ株式会社 Multilayer printed wiring board and manufacturing method thereof
JP6457206B2 (en) * 2014-06-19 2019-01-23 株式会社ジェイデバイス Semiconductor package and manufacturing method thereof
CN106031315B (en) * 2014-06-23 2019-06-28 三星电机株式会社 Circuit substrate and circuit substrate component
JP2016015433A (en) 2014-07-03 2016-01-28 イビデン株式会社 Circuit board and method of manufacturing the same
JP2016015432A (en) 2014-07-03 2016-01-28 イビデン株式会社 Circuit board and method of manufacturing the same
JP2016025144A (en) * 2014-07-17 2016-02-08 イビデン株式会社 Circuit board and manufacturing method of the same
US9674940B2 (en) 2014-08-14 2017-06-06 Samsung Electronics Co., Ltd. Electronic device and semiconductor package with thermally conductive via
KR102262906B1 (en) * 2014-11-13 2021-06-09 삼성전기주식회사 Circuit board
TWI542271B (en) * 2015-02-11 2016-07-11 旭德科技股份有限公司 Package substrate and manufacturing method thereof
JP2016149475A (en) 2015-02-13 2016-08-18 イビデン株式会社 Circuit board and method of manufacturing same
JP2016171119A (en) 2015-03-11 2016-09-23 イビデン株式会社 Circuit board and method of manufacturing the same
KR102411999B1 (en) * 2015-04-08 2022-06-22 삼성전기주식회사 Circuit board
KR102411997B1 (en) * 2015-04-08 2022-06-22 삼성전기주식회사 Circuit board and method of manufacturing the same
KR102472945B1 (en) * 2015-04-23 2022-12-01 삼성전기주식회사 Printed circuit board, semiconductor package and method of manufacturing the same
JP2016219478A (en) * 2015-05-15 2016-12-22 イビデン株式会社 Wiring board and manufacturing method therefor
TWI578416B (en) * 2015-09-18 2017-04-11 Subtron Technology Co Ltd Package carrier and manufacturing method thereof
KR20170048869A (en) * 2015-10-27 2017-05-10 삼성전기주식회사 Printed circuit board and method of manufacturing the same
CN113574974A (en) * 2020-01-31 2021-10-29 迅达科技公司 Printed circuit board assembly with engineered thermal path and method of manufacture
WO2021255829A1 (en) * 2020-06-16 2021-12-23 株式会社メイコー Heat-radiating member and heat-radiating substrate using same
WO2022004403A1 (en) * 2020-06-30 2022-01-06 凸版印刷株式会社 Multilayer wiring board and semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3817453B2 (en) * 2001-09-25 2006-09-06 新光電気工業株式会社 Semiconductor device
JP3922642B2 (en) * 2003-07-30 2007-05-30 日本無線株式会社 Printed circuit board with heat conducting member and method for manufacturing the same
JP2005072184A (en) * 2003-08-22 2005-03-17 Osamu Nagai Compound substrate of metal core and multilayer substrate
KR100751995B1 (en) * 2006-06-30 2007-08-28 삼성전기주식회사 Printed circuit board and fabricating method of the same
JP2008060372A (en) * 2006-08-31 2008-03-13 Sanyo Electric Co Ltd Circuit apparatus, method of manufacturing the same, wiring substrate, and method of manufacturing the same
US8436250B2 (en) * 2006-11-30 2013-05-07 Sanyo Electric Co., Ltd. Metal core circuit element mounting board
JP4669567B1 (en) * 2010-02-24 2011-04-13 エンパイア テクノロジー ディベロップメント エルエルシー Wiring board and manufacturing method thereof

Also Published As

Publication number Publication date
JP2013135168A (en) 2013-07-08

Similar Documents

Publication Publication Date Title
JP5987314B2 (en) Printed wiring board
US8941230B2 (en) Semiconductor package and manufacturing method
KR101119303B1 (en) A printed circuit board comprising embedded electronic component within and a method for manufacturing the same
US9474158B2 (en) Printed wiring board
JP5931547B2 (en) Wiring board and manufacturing method thereof
JP6504665B2 (en) Printed circuit board, method of manufacturing the same, and electronic component module
US8853552B2 (en) Multilayer printed wiring board and method for manufacturing multilayer printed wiring board
JPWO2007126090A1 (en) CIRCUIT BOARD, ELECTRONIC DEVICE DEVICE, AND CIRCUIT BOARD MANUFACTURING METHOD
JP2013214578A (en) Wiring board and method for manufacturing the same
KR20130035981A (en) Printed wiring board
JP2011258772A (en) Wiring board and manufacturing method thereof, and semiconductor device
JP2017108019A (en) Wiring board, semiconductor package, semiconductor device, method for manufacturing wiring board and method for manufacturing semiconductor package
JP2015106615A (en) Printed wiring board and method for manufacturing printed wiring board
JP2013197245A (en) Printed wiring board
JP2013243227A (en) Wiring board and method of manufacturing the same
US10887985B2 (en) Wiring substrate
JP2016063130A (en) Printed wiring board and semiconductor package
JP2017050313A (en) Printed wiring board and manufacturing method for printed wiring board
JP2016015432A (en) Circuit board and method of manufacturing the same
JP2014049578A (en) Wiring board and manufacturing method of wiring board
JP6699043B2 (en) Printed circuit board, manufacturing method thereof, and electronic component module
US20080073025A1 (en) Method of manufacturing copper-clad laminate for VOP application
JP5660462B2 (en) Printed wiring board
KR100803960B1 (en) Package on package substrate and the manufacturing method thereof
JP6082233B2 (en) Wiring board and manufacturing method thereof

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20141120

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150710

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150728

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150924

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20160315

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160524

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20160601

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160712

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160725

R150 Certificate of patent or registration of utility model

Ref document number: 5987314

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250