JP5974590B2 - Optical semiconductor device and manufacturing method thereof - Google Patents

Description

  The present invention relates to an optical semiconductor device having a ridge waveguide or a mesa type optical waveguide and whose operation is controlled by a local heating mechanism, and a method for manufacturing the same.

  Refractive index waveguide type in optical semiconductor devices applied in various fields due to its small size and low power consumption, especially in semiconductor lasers and semiconductor optical amplifiers where mode control of propagating light and carrier confinement are important. The optical waveguide is widely applied.

  It is possible to control the operation parameters of the optical semiconductor element by controlling the temperature of such an optical waveguide. For example, a distributed feedback-back (DFB) semiconductor laser is applied as a light source for a video device that requires communication and monochromaticity because it can operate in a single longitudinal mode.

  Since the DFB laser oscillates by selectively feeding back the light generated in the active region by a diffraction grating provided inside the optical waveguide, the oscillation wavelength is adjusted by controlling the refractive index according to the temperature of the optical waveguide. It is possible. Further, for example, temperature control may be used for gain control in a semiconductor optical amplifier (SOA) or the like, and temperature control for detuning control in an electro-absorption type optical modulator.

  The temperature of the optical waveguide includes a method of controlling the entire device with a thermoelectric cooler (TEC) and a method of controlling the temperature with a micro heater mounted on the device (for example, see Patent Document 1). Since the former controls the temperature of the entire element, it is not necessary to give a special structure to the element, but the power consumption is large. Since the latter controls the temperature locally, it consumes less power than the former.

  Since the microheater locally controls the temperature of the optical waveguide, it is possible to control the temperature with higher power efficiency by locally heating the vicinity of the core layer where the light distribution intensity of the optical waveguide is strong. However, since it is also required to drive the element by injecting carriers into the junction or applying a voltage at the same time, the microheater is often formed on the element driving electrode.

  FIG. 18 is a schematic cross-sectional view of a conventional microheater loaded semiconductor laser. On the n-type GaAs substrate 61, an n-type AlGaAs clad layer 62, an MQW active layer 63, a p-type AlGAAs clad layer 64, a p-type InGaP clad layer 65 and a p-type GaAs contact layer 66 are sequentially grown.

Next, the p-type GaAs contact layer 66 and the p-type InGaP cladding layer 65 are etched in a stripe shape to form a ridge waveguide. Next, after forming the SiO ₂ protective film 67 on the entire surface, the side surface of the ridge waveguide is buried with the BCB film 68.

Next, after forming the p-side electrode 69 on the p-type GaAs contact layer 66, the SiO ₂ protective film 70 is formed on the entire surface, and the micro heater 71 is provided so as to overlap the p-side electrode 69 in a projective manner. An n-side electrode 72 is provided on the back surface of the n-type GaAs substrate 61.

  However, in such a structure, since the heater and the core layer of the optical waveguide are far away, the heat of the heater cannot be efficiently transmitted to the core layer of the optical waveguide. There is a problem that large and efficient heating is not possible.

  In addition, since the physical distance between the heater and the core portion of the optical waveguide cannot be increased, the thickness of the element driving electrode is limited, resulting in an increase in electrode resistance and, consequently, an increase in power consumption of the entire element. is there. Furthermore, since the heater electrode is further formed on the element driving electrode, the process steps become complicated, and the flatness of the upper surface of the element is deteriorated, resulting in a problem that the process yield is lowered.

  In order to solve such problems, it has been proposed to use a buried heterojunction semiconductor laser to provide a heating layer in the buried layer and bring the heating layer closer to the active layer (for example, a patent) Reference 2). FIG. 19 is an explanatory diagram of a conventional embedded heater loaded semiconductor laser.

  On an n-type InP substrate 81, an n-type InP buffer layer 82, an n-type InGaAsP diffraction grating layer 83, an InGaAsPSCH layer 84, an MQW active layer 85, an InGaAsPSCH layer 86, a p-type InP cladding layer 87 and a p-type InGaAs contact layer 88 are formed. Grow sequentially. Next, mesa etching reaching the n-type InP buffer layer 82 is performed to form a striped mesa.

Next, after burying the side surface of the striped mesa with the Fe-doped InP buried layer 89, a recess reaching the depth of the MQW active layer 85 is formed in the Fe-doped InP buried layer 89, and this recess is formed in the n-type InP heating layer. Embed at 90. Next, after forming the SiO ₂ protective film 91, a predetermined opening is formed, and the p-side electrode 92 and the heater electrode 94 are formed. An n-side electrode 93 is provided on the back surface of the n-type InP substrate 81.

JP-A-2005-250320 JP 2002-217485 A

  However, in patent document 2, since the semiconductor layer grown by epitaxial growth is used for the heating body, there is a problem that the number of times of growth increases and the cost and man-hour increase.

  Therefore, an object of the optical semiconductor device is to efficiently heat the waveguide with a simple configuration.

From one aspect to be disclosed, a semiconductor substrate, a first cladding layer formed on the semiconductor substrate, a core layer formed on the first cladding layer, and a second layer formed on the core layer The second clad layer has a striped convex structure in which the cross section perpendicular to the optical axis is a vertical mesa-shaped or inverted mesa-shaped optical waveguide at a portion away from the core layer of the second clad layer , An insulating film formed on at least a side surface of the convex structure, a heater element made of a metal film formed on the insulating film, and an electric current injected into the core layer formed on the top of the convex structure or a main electrode for applying a voltage, have a pair of heater electrodes to flow a current to the heater element, the heater element, in the region other than the region for forming the pair of heater electrodes in the convex structure, the Only on the side of the convex structure An optical semiconductor device is provided, characterized by being.

  From another viewpoint to be disclosed, a step of crystal growth of at least a first cladding layer, a core layer, and a second cladding layer on a semiconductor substrate, and a growth layer side of the second cladding layer. Etching at least a portion into a vertical mesa-like or inverted mesa-like convex structure, forming an insulating film on at least a side surface of the convex structure, and forming a metal film on the entire surface including the convex structure And a step of colliding ionized gas with the metal film to remove the metal film formed on the flat portion and the forward mesa-shaped portion of the entire surface of the metal film, and the convex shape And a step of depositing a part of the removed metal on a metal film formed on an insulating film formed on a side surface of the structure to form a heater element. A method is provided.

  According to the disclosed optical semiconductor device and the manufacturing method thereof, the waveguide can be efficiently heated with a simple configuration.

It is explanatory drawing of the optical semiconductor device of embodiment of this invention. It is explanatory drawing to the middle of the manufacturing process of the optical semiconductor device of Example 1 of this invention. It is explanatory drawing to the middle after FIG. 2 of the manufacturing process of the optical semiconductor device of Example 1 of this invention. It is explanatory drawing to the middle after FIG. 3 of the manufacturing process of the optical semiconductor device of Example 1 of this invention. It is explanatory drawing to the middle after FIG. 4 of the manufacturing process of the optical semiconductor device of Example 1 of this invention. It is explanatory drawing to the middle after FIG. 5 of the manufacturing process of the optical semiconductor device of Example 1 of this invention. FIG. 7 is an explanatory diagram up to the middle of FIG. FIG. 8 is an explanatory diagram up to the middle of FIG. It is explanatory drawing to the middle of FIG. 8 or later of the manufacturing process of the optical semiconductor device of Example 1 of this invention. It is explanatory drawing to the middle of FIG. 9 or subsequent of the manufacturing process of the optical semiconductor device of Example 1 of this invention. FIG. 11 is an explanatory diagram after FIG. It is a structure figure in the middle of manufacture of the optical semiconductor device of Example 2 of this invention. It is sectional drawing of each part of the optical semiconductor device of Example 2 of this invention. It is FF 'sectional drawing of the optical semiconductor device of Example 2 of this invention. It is a structure figure in the middle of manufacture of the optical semiconductor device of Example 3 of this invention. It is GG 'sectional drawing of the optical semiconductor device of Example 3 of this invention. It is HH 'sectional drawing of the optical semiconductor device of Example 3 of this invention. It is a schematic sectional drawing of the conventional micro heater loading type | mold semiconductor laser. It is explanatory drawing of the conventional embedded heater loading type | mold semiconductor laser.

  Here, an optical semiconductor device according to an embodiment of the present invention will be described with reference to FIG. FIG. 1 is an explanatory view of an optical semiconductor device according to an embodiment of the present invention, FIG. 1 (a) is a plan view, and FIG. 1 (b) is a point connecting BB 'in FIG. 1 (a). It is sectional drawing along a dashed line. In FIG. 1A, the AA ′ direction and the CC ′ direction are also shown for the purpose of explaining Example 1 described later.

  In the optical semiconductor device according to the embodiment of the present invention, a first cladding layer 2, a core layer 3, and a second cladding layer 4 are sequentially deposited on a semiconductor substrate 1. Next, a stripe-shaped convex structure 5 having a width of 1 μm to 2 μm is formed in a part of the second cladding layer 4 so that a cross section perpendicular to the optical axis is a vertical mesa-shaped or inverted mesa-shaped optical waveguide. For example, if the semiconductor substrate 1 is a substrate made of a group III-V compound semiconductor having a (100) plane as the main surface and the ridge forming portion is InGaP, the side surface is (011) by setting the optical axis direction to (011) -11-1) A reverse mesa shape appears. The III-V group compound semiconductor may be AlGaAs / GaAs or InGaAsP / InP, and may be another material. Also, it is possible to form an inverted mesa shape or a vertical mesa shape by adjusting the etching conditions by dry etching.

  An insulating film 6 is formed on at least the side surface of the convex structure 5, and a heater element 7 made of a metal film is formed on the insulating film 6. A main electrode 8 for injecting current or applying voltage to the core layer 3 is formed on the top of the convex structure 5, and a pair of heater electrodes 9 and 10 for flowing current to the heater element 7 are formed.

Thus, since the form of the heater element 7 on its side surface by using a ridge waveguide structure, it is possible to form the heater element 7 to the core layer 3 sufficiently physically close positions, the heater element 7 Can be efficiently transmitted to the core layer 3. Further, since the heater element 7 is composed of a metal thin film, the temperature of the waveguide can be efficiently controlled without being restricted by the power supply voltage.

  In this case, when the optical semiconductor device is used as a semiconductor laser or a semiconductor optical amplifier, the core layer 3 may be a bulk semiconductor active layer, a well layer may be a single SQW active layer, or an MQW active layer. It may be a layer. When the MQW active layer is formed, the well layer forming the MQW active layer may be two layers or two or more layers. In the case of a semiconductor laser, a diffraction grating may be provided at least in the vicinity of the active layer in the case of a DFB laser, DBR laser, or DR laser structure.

The convex structure 5 may be formed by two mutually parallel trench portions, and the width of the trench in this case is 10 μm to 20 μm. Moreover, you may form the additional convex part which protrudes in the direction orthogonal to the extension direction of the convex structure 5 to the one side of a trench part so that the both sides | surfaces may become a forward mesa shape.

  When two parallel trench portions are formed, heater elements are formed on both side surfaces of the trench, and the heater elements formed on the side surface facing the convex structure 5 cause a reactive current as a heater residue. . Therefore, in order not to generate a reactive current, it is necessary to provide the heater electrodes 9 and 10 on opposite sides of the convex structure 5.

Further, in the case of forming the additional projections, the heater residue because it is cut by adding protrusions, does not flow reactive current be a pair of heater electrodes 9 and 10 on the side provided with the additional protrusion . Thereby, an increase in the element width can be avoided.

  Further, in order to form the heater element 7, a film forming method with low directivity, for example, film formation by sputtering and reattachment by resputtering is used. It is not easy to form the heater element 7 only on the side surface of the convex structure 5 by a general method. For example, when a metal is selectively formed on a part of an element, a process called lift-off is often used. In this method, a mask is not formed in a region where metal is selectively formed, a mask is formed in a region where metal is not formed, metal is uniformly deposited on the mask, and a region where metal is not formed is deposited together with the mask. This is a method of forming metal at a desired location by removing (lifting off) the formed metal.

  However, in this method, the mask formed in the region to be lifted off requires a thickness of about several μm. The convex structure called ridge or mesa of the optical semiconductor element has a height of about 1 μm to 2 μm at most, and a lift-off mask cannot be formed.

  Further, if vapor deposition with high directivity is not performed, metal is formed even on the side surface of the lift-off mask, and the lift-off itself cannot be performed. For this reason, it is necessary to perform vapor deposition with high directivity, but in that case, metal cannot be vapor-deposited also on the side surface of the convex structure 5. For the above reasons, the lift-off process is effective when the metal is selectively formed on the flat portion, but the metal is selectively formed on the side surface of the convex structure as in the present invention. It is not valid.

  Further, for example, a method of forming a metal on the side surface of the convex structure by a vapor deposition method with low directivity such as sputtering, and then forming a mask to remove unnecessary portions of the metal can be considered. However, selectively forming a resist mask or the like only on the side surface of the convex structure 5 is extremely difficult and impractical in view of the mask alignment accuracy.

  Therefore, first, a metal is formed on the entire surface of the element including the side surface of the convex structure 5 by a vapor deposition method with low directivity such as sputtering. Thereafter, the entire element is regarded as a target in the sputtering process, and a high voltage is applied to collide the ionized gas. The ionized gas having high energy collides with the metal film formed on the element flat portion to eject (sputter) the metal, and re-deposit the sputtered metal on the side surface of the convex structure.

  At this time, in order to inject current into the heater element 7, the pad and the region serving as the input / output line connecting the pad and the heater are appropriately patterned to protect them from being sputtered. In addition, in consideration of the deposit due to the sputtering effect from the flat part of the element, the first metal film formation by sputtering is made thinner than the final target heater thickness, so that a heater element made of a metal thin film with a desired thickness 7 can be formed on the side surface of the convex structure 5.

As for the insulating material, the protective film is typically a SiO ₂ film, and the buried insulating film is typically a BCB film, but is not limited to a SiO ₂ film or a BCB film. Other insulating films such as a SiON film and a SiN film may be used.

  The optical semiconductor device is not limited to a semiconductor laser or a semiconductor optical amplifier, but may be an EA modulator. The device is not limited to a single device, and may be a device in which a semiconductor laser and a semiconductor optical amplifier are integrated, or a device in which a semiconductor laser and an EA modulator are integrated. Furthermore, the heater element 7 does not need to be formed over the entire length of the side surface of the convex structure 5, and may be formed only on a part thereof.

  Next, a manufacturing process of the optical semiconductor device according to the first embodiment of the present invention will be described with reference to FIGS. 2 to 11. Here, a description will be given of a DFB laser. In the figure, AA ′ is a sectional view along the optical axis, BB ′ is a sectional view perpendicular to the optical axis, and CC ′ is perpendicular to the optical axis in the vicinity of the element end. It is sectional drawing.

  First, as shown in FIG. 2A, an n-type GaAs buffer layer 22 having a thickness of 300 nm and a thickness are formed on an n-type GaAs substrate 21 whose main surface is a (100) plane by metal organic chemical vapor deposition. A 2000 nm n-type AlGaAs cladding layer 23 is sequentially epitaxially grown. Next, an MQW active layer 24 composed of two 7 nm i-type InGaAs well layers and one 20 nm i-type GaAs barrier layer sandwiched between 40 nm i-type GaAsSCH layers is grown. Next, a p-type AlGaAs cladding layer 25 having a thickness of 250 nm and a p-type GaAs diffraction grating layer 26 having a thickness of 60 nm are sequentially formed.

Next, as shown in FIG. 2B, after a SiO ₂ film 27 is formed on the entire surface by chemical vapor deposition (CVD), a photoresist 28 is applied. Next, as shown in FIG. 2C, the photoresist 28 is exposed and developed to form a diffraction grating-like photoresist pattern 29.

Next, as shown in FIG. 3D, using the photoresist pattern 29 as a mask, the SiO ₂ film 27 is etched with a buffered hydrofluoric acid solution to form a diffraction grating-like SiO ₂ film pattern 30.

Next, as shown in FIG. 3 (e), after removing the photoresist pattern 29, the exposed surface of the p-type GaAs diffraction grating layer 26 is covered with ammonia water, hydrogen peroxide water, water using the SiO ₂ film pattern 30 as a mask. Etching with the mixed solution forms the diffraction grating 31 having a depth of 25 nm. The period of the diffraction grating 31 varies depending on the wavelength band of the element to be manufactured. For example, in the case of a 1060 nm band DFB laser, if the period is 155.6 nm, a Bragg wavelength near 1060 nm can be obtained. Next, as shown in FIG. 3F, the SiO ₂ film pattern 30 is removed, and crystal growth is started again.

  Next, as shown in FIG. 4 (g), the MOCVD method is used again to grow the p-type InGaP clad layer 32 with the diffraction grating embedded therein by 1000 nm, and then the 300-nm p-type GaAs contact layer 33 is grown. . At this stage, the crystal growth process is completed.

Next, as shown in FIG. 4 (h), a SiO ₂ film 34 is formed on the entire surface by using a CVD method, and then a photoresist is applied, exposed and developed to extend in the (011) plane direction. A striped photoresist pattern 35 having a width of 2.0 μm is formed.

Next, as shown in FIG. 5I, the SiO ₂ film 34 is etched with a buffered hydrofluoric acid solution using the photoresist pattern 35 as a mask to form a striped SiO ₂ film pattern 36 corresponding to the waveguide pattern. Next, after removing the photoresist pattern 35, the p-type GaAs contact layer 33 is etched using a mixed solution of ammonia water, hydrogen peroxide water, and water using the SiO ₂ film pattern 36 as a mask. Subsequently, a convex ridge waveguide 37 is formed by etching the p-type InGaP clad layer 32 using a mixed solution of hydrochloric acid and acetic acid. At this time, the (-11-1) plane appears on the side surface of the ridge waveguide 37 to form an inverted mesa structure. In the etching process of the p-type InGaP cladding layer 32, the p-type GaAs diffraction grating layer 26 is not etched by an etchant of hydrochloric acid or acetic acid, so that the etching is stopped.

Next, as shown in FIG. 5J, after the SiO ₂ film pattern 36 is removed with a buffered hydrofluoric acid solution, a SiO ₂ protective film 38 is formed on the entire surface by CVD. Next, a Ti / Pt film 39 is formed by sequentially depositing a Ti film having a thickness of 30 nm and a Pt film having a thickness of 400 nm by sputtering. Note that, as will be described later, in the patterning process of the Ti / Pt film 39, Pt and Ti are reattached and the thickness is increased. Therefore, at this stage, the film thickness is made thinner than the final desired heater thickness.

Next, as shown in FIG. 6 (k), an SiO ₂ film (not shown) is formed again using the CVD method, and then a photoresist is applied, exposed and developed to straddle the ridge waveguide 37. A photoresist pattern 40 having a connection pattern is formed. Next, using the photoresist pattern 40 as a mask, the SiO ₂ film is etched using a buffered hydrofluoric acid solution to form a SiO ₂ film pattern (not shown).

Next, as shown in FIG. 6L, after removing the photoresist pattern 40, it was deposited on the flat portion and the top of the ridge waveguide 37 by sputtering using ionized Ar gas using the SiO ₂ film pattern as a mask. The Pt film is removed. Next, the Ti film deposited on the flat portion and the top of the ridge waveguide 37 is removed by a sputtering method in which a mixed gas of CF ₄ + Ar is ionized. In these sputtering processes, the sputtered Pt and Ti are sequentially deposited on the Ti / Pt film 39 deposited on the side surface of the ridge waveguide 37 to form a Ti / Pt / Pt / Ti film 41. The Ti / Pt / Pt / Ti film 41 has thicknesses of 30 nm, 400 nm, 300 nm, and 20 nm in this order.

Next, as shown in FIG. 7M, the SiO ₂ film pattern is removed using a buffered hydrofluoric acid solution. At this time, there is a pattern serving as a power input / output line to the heater straddling the ridge waveguide 37 in the vicinity of the light input / output end face. Therefore, a Ti / Pt film serving as a power input / output line to the heater is present in this portion. 39 and the Ti / Pt / Pt / Ti film 41 serving as a heater are electrically connected.

Next, as shown in FIG. 7 (n), the SiO ₂ film 42 is again formed so as to cover the entire surface by using the CVD method, and then BCB (Benzocyclobutylene), which is an organic insulating material, is formed using spin coating or the like. The ridge waveguide 37 is embedded with the BCB film 43.

Next, as shown in FIG. 8 (o), the BCB film 43 is etched back using reactive ion etching (RIE) to expose the SiO ₂ film 42 covering the top of the ridge waveguide 37.

Next, as shown in FIG. 8 (p), a photoresist pattern 44 having an opening corresponding to the ridge waveguide 37 is formed by applying a photoresist, exposing and developing. Next, using the photoresist pattern 44 as a mask, the SiO ₂ film 42 and the SiO ₂ protective film 38 are sequentially removed using a buffered hydrofluoric acid solution in the opening to expose the p-type GaAs contact layer 33.

  Next, after removing the resist pattern 44 as shown in FIG. 9 (q), a Ti / Pt / Au film 45 is formed on the entire surface of the device by using an electron beam evaporation method. Next, as shown in FIG. 9 (r), by applying a photoresist, exposing and developing, a plating frame 46 having an opening corresponding to a portion serving as a carrier injection electrode of the DFB laser and its electrode pad. Form. Next, using the plating frame 46 as a mask, an Au plating layer 47 is formed by an electrolytic plating method using the exposed Ti / Pt / Au film 45 as an electrode.

  Next, as shown in FIG. 10S, after the plating frame 46 is removed, the exposed portion of the Ti / Pt / Au film 45 that is a plating seed is removed by dry etching using the Au plating layer 47 as a mask.

Next, as shown in FIG. 11 (t), a photoresist pattern (opening is formed in the pad portion of the heater electrode and a part of the power input / output line to the heater by applying a photoresist, exposing and developing the photoresist pattern ( (Illustration is omitted). Next, the BCB film 43 is exposed through the opening and removed by reactive ion etching to expose the SiO ₂ film 42. Next, the exposed SiO ₂ film 42 is removed using a buffered hydrofluoric acid solution to expose the Ti / Pt film 39 corresponding to the power input / output lines to the pad and the heater.

  Next, using the remaining resist pattern as a lift-off mask, an EB vapor deposition method (electron beam vapor deposition method) is used to deposit an Au film on the entire surface, and then the Au film formed on portions other than the openings is removed together with the resist pattern. Thus, the Au film 48 is formed on the pad portion and a part of the power input / output line to the heater. The Au film 48 lowers the pad resistance and provides a base thickness that prevents penetration, so that wire bonding is also possible.

  Next, as shown in FIG. 11 (u), the back surface of the n-type GaAs substrate is polished so that the thickness of the element becomes about 150 μm, and then an AuGe / Au film 49 to be a lower electrode is formed. A plating layer 50 is formed.

  Although illustration is omitted, finally, the element is cleaved with an appropriate length, and one end face is coated with a reflective film (HR film) having a reflectivity of 95%, for example, and the other end face is coated with a reflectivity of 1%, for example. The following antireflective film (AR film) is coated. The output side is the AR film side.

  In the first embodiment of the present invention, since the heater made of a metal thin film is formed on the side surface of the ridge waveguide, the optical waveguide can be efficiently heated without being restricted by the power supply voltage. In our study, the power efficiency is improved by about 10% compared to the conventional microheater loaded semiconductor laser shown in FIG.

  In addition, the semiconductor laser electrode can be freely designed by forming a heater made of a metal thin film on the side surface of the ridge. That is, when the thin film heater is formed on the carrier injection electrode of the semiconductor laser as in the conventional structure, the thickness of the carrier injection electrode of the semiconductor laser needs to be suppressed to about 1 μm or less. By using the process, a thickness of about 4 μm can be secured. For this reason, it is possible to reduce the power consumption of the semiconductor laser. This is particularly effective when the semiconductor element is directly modulated, since it is necessary to reduce the electrode area of the semiconductor laser, so that the thickness can be increased.

  Next, an optical semiconductor device according to Example 2 of the present invention will be described with reference to FIGS. The optical semiconductor device according to the second embodiment of the present invention is a basic crystal growth process in which the convex ridge waveguide in the first embodiment is formed by two trench portions extending in parallel with each other. The insulating film forming step and the heater forming step are the same as those in the first embodiment. 12A is a plan view immediately after formation of the trench portion, and FIG. 12B is a plan view after formation of each pad.

First, the p-type GaAs contact layer 33 is grown on the n-type GaAs substrate 21 in the same manner as in the process up to FIG. Next, after forming a SiO ₂ film, a photoresist is applied, exposed and developed to form a photoresist pattern (both not shown) having two parallel openings. Next, the SiO ₂ film is etched using a buffered hydrofluoric acid solution using the photoresist pattern as a mask to form a SiO ₂ film pattern.

Next, after removing the photoresist pattern, the p-type GaAs contact layer 33 is etched using a mixed solution of ammonia water, hydrogen peroxide water, and water using the SiO ₂ film pattern as a mask. Subsequently, the p-type InGaP cladding layer 32 is etched using a mixed solution of hydrochloric acid and acetic acid to form a convex ridge waveguide 37 and a trench portion 51 having a width of 10 μm on both sides thereof. Next, the planar structure shown in FIG. 12A is obtained by removing the SiO ₂ film pattern.

  Thereafter, the basic configuration of the optical semiconductor device according to the second embodiment of the present invention is completed by performing the steps of FIGS. 5 (j) to 12 (u) according to the first embodiment again. However, in the step of FIG. 6 (k), as shown in FIG. 12 (b), photoresist patterns corresponding to the heater pad and the power input / output lines to the heater are provided on opposite sides of the ridge waveguide. is necessary.

  13A is a cross-sectional view taken along the line DD ′ in FIG. 12B, and Ti / Pt / Pt / Ti films 41 and heater residues 52 and 53 serving as heater elements are formed on both side surfaces of the trench portion 51. FIG. The FIG. 13B is a cross-sectional view taken along the line E-E ′ in FIG. 12B, and the heater residue 53 is formed on the right side surface of the right trench portion 51, but the Ti / Pt film is formed in the other portions. Thus, the power input / output line to the heater and the pad base portion are formed, and the heater pad 54 made of the Au film 48 is formed on the pad base portion. FIG. 14 is a cross-sectional view taken along the line FF ′ in FIG. 12B, and the heater residue 52 is formed on the left side surface of the left trench portion 51. In the other portions, the Ti / Pt film 39 is formed. A power input / output line to the heater and a pad base part are formed, and a heater pad 55 made of an Au film 48 is formed on the pad base part.

  Since the terrace portions forming both sides of the trench portion 51 are separated from the ridge waveguide 37 by 10 μm, the temperature change due to the current component flowing into the heater residues 52 and 53 formed on the side surfaces of the trench portion 51 contributes almost to the element control. It becomes invalid power consumption without.

  However, as shown in FIGS. 13 and 14, the left heater residue 52 is connected to the heater pad 54, but is not connected to the heater pad 55, so no current flows. Further, the heater residue 53 on the right side is also connected to the heater pad 55 but is not connected to the heater pad 54, so that no current flows and unnecessary power input can be avoided.

  In the second embodiment of the present invention, both sides of the trench portion have a terrace structure, and the entire surface is flatter than that of the first embodiment. Therefore, the exposure process, the vapor deposition process, or the etching process can be performed with high accuracy. As a result, a good production yield can be obtained.

  Next, an optical semiconductor device according to Example 3 of the present invention will be described with reference to FIGS. The optical semiconductor device according to the third embodiment of the present invention is provided with an overhanging trench portion 57 projecting in a direction perpendicular to the ridge waveguide on one of the trench portions in the second embodiment. The crystal growth step, the insulating film formation step, and the heater formation step are the same as in the first and second embodiments. FIG. 15A is a plan view immediately after forming the trench portion, and FIG. 15B is a plan view after forming each pad.

First, similarly to the process up to FIG. 4G of the first embodiment, the p-type GaAs contact layer 33 is grown on the n-type GaAs substrate 21 whose main surface is the (100) plane. Next, after forming a SiO ₂ film, a photoresist is applied, exposed and developed to form a photoresist pattern having two parallel openings and openings corresponding to the overhanging trenches (both are (Illustration is omitted). At this time, the extending direction of the two parallel openings is defined as the (011) plane direction. Next, the SiO ₂ film is etched using a buffered hydrofluoric acid solution using the photoresist pattern as a mask to form a SiO ₂ film pattern.

Next, after removing the photoresist pattern, the p-type GaAs contact layer 33 is etched using a mixed solution of ammonia water, hydrogen peroxide water, and water using the SiO ₂ film pattern as a mask. Subsequently, the p-type InGaP cladding layer 32 is etched using a mixed solution of hydrochloric acid and acetic acid to form a convex ridge waveguide 37 and a trench portion 51 having a width of 10 μm on both sides thereof. At this time, the (111) plane appears on the side surfaces on both sides of the overhanging trench portion 57 to form a forward mesa structure. Next, the planar structure shown in FIG. 15A is obtained by removing the SiO ₂ film pattern.

  Thereafter, the basic configuration of the optical semiconductor device according to the third embodiment of the present invention is completed by performing the steps of FIGS. 5 (j) to 11 (u) according to the first embodiment again. However, in the step of FIG. 6 (k), as shown in FIG. 15 (b), a photoresist pattern corresponding to the heater pad and the power input / output line to the heater is provided on the same side across the ridge waveguide.

FIG. 16 is a cross-sectional view taken along the line GG ′ in FIG. 15B in the course of manufacture. As shown in FIG. 16A, after forming the trench portion 51 as in the first embodiment, the SiO ₂ protective film 38 and Ti / Pt film 39 are sequentially deposited. Next, as shown in FIG. 16B, the Ti / Pt film 39 deposited on the flat surface is removed by sputtering. At this time, a part of the removed Pt and Ti is reattached on the Ti / Pt film 39 on the side surface to become a heater residue 52 made of a Ti / Pt / Pt / Ti film.

On the other hand, FIG. 17 is a cross-sectional view taken along the line H-H ′ in FIG. 15 (b) during manufacture. As shown in FIG. 17 (a), after forming the trench portion 51, as shown in FIG. _{2 A} protective film 38 and a Ti / Pt film 39 are sequentially deposited. Next, as shown in FIG. 17B, the Ti / Pt film 39 deposited on the flat surface is removed by sputtering. At this time, since both side surfaces of the overhanging trench portion 57 are in the form of a forward mesa with the (111) plane exposed, the Ti / Pt film 39 deposited thereon is removed and becomes a missing portion.

  Also in this case, since the terrace portions forming both sides of the trench portion 51 are separated from the ridge waveguide 37 by 10 μm, the temperature change due to the current component flowing into the heater residues 52 and 53 formed on the side surfaces of the trench portion 51 is Ineffective power consumption with little contribution to control.

  Further, considering the yield and workability of the wire bonding process, the pad needs to have a size of about 80 μm square, so the lateral width direction of the element is limited by the pad size. Further, for example, in the case of an element having a bent waveguide, the ridge may be offset from the element center in advance so that the element width does not increase due to the occupied length in the lateral width direction by the bent waveguide. Even in such a case, arranging the input / output pads of the heater and the power input / output lines to the heater one by one with respect to the ridge causes an increase in the element width.

  However, as shown in FIG. 17, since the overhanging trench portion 57 is provided, the left heater residue 52 is missing in the overhanging trench portion 57. Therefore, even if the heater pads 54 and 55 are provided on the same side with respect to the ridge waveguide 37 in order to avoid an increase in the element width, no current flows through the left heater residue 52. Further, since the heater residue 53 on the right side is not connected to the heater pads 54 and 55, no current flows, and unnecessary power input can be avoided.

Here, the following supplementary notes are attached to the embodiments of the present invention including Examples 1 to 3.
(Supplementary note 1) a semiconductor substrate, a first cladding layer formed on the semiconductor substrate, a core layer formed on the first cladding layer, and a second cladding formed on the core layer A layer having a stripe-like convex structure in which a section perpendicular to the optical axis forms a vertical mesa-shaped or inverted mesa-shaped optical waveguide in a portion away from the core layer of the second cladding layer, An insulating film formed on at least a side surface of the convex structure, a heater element made of a metal film formed on the insulating film, and an electric current injected into the core layer or voltage formed on the top of the convex structure a main electrode for applying a, have a pair of heater electrodes to flow a current to the heater element, the heater element, in the region other than the region for forming the pair of heater electrodes in the convex structure the convex Only on the side of the structure Light wherein a.
(Supplementary note 2) The optical semiconductor device according to supplementary note 1, wherein the optical semiconductor device has a striped groove-like structure on both sides of the convex structure.
(Supplementary Note 3) One of the pair of heater electrodes is disposed on one side of the stripe-shaped convex structure, and the other of the pair of heater electrodes is disposed on the other side of the stripe-shaped convex structure. The optical semiconductor device according to appendix 1 or appendix 2, wherein the optical semiconductor device is disposed on a side portion side.
(Appendix 4) One of the striped groove-like structures has an additional convex part projecting in a right angle direction projecting to the side away from the convex structure, and a cross-sectional shape perpendicular to the projecting direction of the additional convex part there is a forward mesa shape, the optical semiconductor device according to Appendix 2, characterized in that not the heater element is present on a side surface of the forward mesa.
(Supplementary note 5) The optical semiconductor device according to supplementary note 4, wherein the pair of heater electrodes is provided on a side where the additional convex portion of the striped convex structure is provided.
(Additional remark 6) In the area | region which forms a pair of said heater electrode, the extension part of the said metal film used as the said heater element is electrically connected with the said heater electrode, Additional remark 1 thru | or Additional remark 5 characterized by the above-mentioned. The optical semiconductor device according to any one of the above.
(Supplementary Note 7) The semiconductor substrate is a GaAs substrate having a (100) plane as a main surface, at least a part of the convex structure is made of InGaP, and the optical axis direction is a (011) plane direction. 7. The optical semiconductor device according to any one of appendices 1 to 6 , wherein a side surface of the convex structure is a (-11-1) plane.
(Supplementary Note 8) Crystal growth of at least a first cladding layer, a core layer, and a second cladding layer on a semiconductor substrate, and at least a part of the second cladding layer on the growth layer side is a vertical mesa Etching into a convex or inverted mesa convex structure, forming an insulating film on at least a side surface of the convex structure, forming a metal film over the entire surface including the convex structure, and the metal The ionized gas is made to collide with the film to remove the metal film formed on the flat portion and the forward mesa-shaped portion of the entire surface of the metal film, and is formed on the side surface of the convex structure. And a step of depositing a part of the removed metal on a metal film formed on the insulating film to form a heater element.
(Supplementary Note 9) In the step of forming the heater element, in the region where the pair of heater electrodes are formed, the metal film is masked so as not to be removed, and in the region where the pair of heater electrodes are formed, the metal film and the The method for manufacturing an optical semiconductor device according to appendix 8, wherein the heater element is electrically connected.

DESCRIPTION OF SYMBOLS 1 Semiconductor substrate 2 1st clad layer 3 Core layer 4 2nd clad layer 5 Convex structure 6 Insulating film 7 Heater element 8 Main electrodes 9, 10 Heater electrode 21 n-type GaAs substrate 22 n-type GaAs buffer layer 23 n-type AlGaAs cladding layer 24 MQW active layer 25 p-type AlGaAs cladding layer 26 p-type GaAs diffraction grating layer 27 SiO ₂ film 28 photoresist 29 photoresist pattern 30 SiO ₂ film pattern 31 diffraction grating 32 p-type InGaP cladding layer 33 p-type GaAs contact Layer 34 SiO ₂ film 35 Photoresist pattern 36 SiO ₂ film pattern 37 Ridge waveguide 38 SiO ₂ protective film 39 Ti / Pt film 40 Photoresist pattern 41 Ti / Pt / Pt / Ti film 42 SiO ₂ film 43 BCB film 44 Photo Resist pattern 45 Ti / Pt / Au film 46 Plating frame 47 Au plating layer 48 Au film 49 AuGe / Au film 50 Au plating layer 51 Trench portion 52, 53 Heater residue 54, 55 Heater pad 56 Carrier injection electrode pad 57 Overhang trench portion 61 n-type GaAs substrate 62 n-type AlGaAs cladding layer 63 MQW active layer 64 p-type AlGaAs cladding layer 65 p-type InGaP cladding layer 66 p-type GaAs contact layer 67 SiO ₂ protective film 68 BCB film 69 p-side electrode 70 SiO ₂ protective film 71 Micro heater 72 n Side electrode 81 n-type InP substrate 82 n-type InP buffer layer 83 n-type InGaAsP diffraction grating layer 84 InGaAsPSCH layer 85 MQW active layer 86 InGaAsPSCH layer 87 p-type InP cladding layer 88 p-type InGaAs contact layer 89 Fe-doped I P buried layer 90 n-type InP heating layer 91 SiO ₂ protective film 92 p-side electrode 93 n-side electrode 94 heater electrode

Claims (5)

A semiconductor substrate and a first cladding layer formed on the semiconductor substrate;
A core layer formed on the first cladding layer; and a second cladding layer formed on the core layer;
A portion of the second cladding layer away from the core layer has a stripe-like convex structure in which a cross section perpendicular to the optical axis is a vertical mesa-shaped or inverted mesa-shaped optical waveguide;
An insulating film formed on at least a side surface of the convex structure;
A heater element made of a metal film formed on the insulating film;
A main electrode formed on the top of the convex structure and injecting current or applying voltage to the core layer;
Have a pair of heater electrodes to flow a current to the heater element,
The optical semiconductor device , wherein the heater element is provided only on a side surface of the convex structure in a region other than a region where the pair of heater electrodes are formed in the convex structure .   2. The optical semiconductor device according to claim 1, further comprising a stripe-like groove structure on both sides of the convex structure. One of the striped groove-like structures has an additional convex part projecting in a direction perpendicular to the side away from the convex structure, and the cross-sectional shape perpendicular to the projecting direction of the additional convex part is a forward mesa shape the optical semiconductor device according to claim 2, characterized in that not the heater element is present on a side surface of the forward mesa. The extension part of the said metal film used as the said heater element is electrically connected with the said heater electrode in the area | region which forms a pair of said heater electrode, The any one of Claim 1 thru | or 3 characterized by the above-mentioned. An optical semiconductor device according to claim 1. Crystal growth of at least a first cladding layer, a core layer, and a second cladding layer on a semiconductor substrate;
Etching at least a portion of the second cladding layer on the growth layer side into a convex structure having a vertical mesa shape or an inverted mesa shape; and
Forming an insulating film on at least a side surface of the convex structure;
Forming a metal film over the entire surface including the convex structure;
The ionized gas is made to collide with the metal film to remove the metal film formed on the flat portion and the forward mesa portion of the entire surface of the metal film, and on the side surface of the convex structure. And a step of forming a heater element by depositing a part of the removed metal on a metal film formed on the formed insulating film.

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