JP5971936B2 - 光電変換装置 - Google Patents

光電変換装置 Download PDF

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Publication number
JP5971936B2
JP5971936B2 JP2011275301A JP2011275301A JP5971936B2 JP 5971936 B2 JP5971936 B2 JP 5971936B2 JP 2011275301 A JP2011275301 A JP 2011275301A JP 2011275301 A JP2011275301 A JP 2011275301A JP 5971936 B2 JP5971936 B2 JP 5971936B2
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JP
Japan
Prior art keywords
photoelectric conversion
substrate
conversion element
spectroscopic device
spectroscopic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011275301A
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English (en)
Japanese (ja)
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JP2012142570A (ja
JP2012142570A5 (cg-RX-API-DMAC7.html
Inventor
田中　幸一郎
幸一郎 田中
祐 有田
祐 有田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2011275301A priority Critical patent/JP5971936B2/ja
Publication of JP2012142570A publication Critical patent/JP2012142570A/ja
Publication of JP2012142570A5 publication Critical patent/JP2012142570A5/ja
Application granted granted Critical
Publication of JP5971936B2 publication Critical patent/JP5971936B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/492—Spectrum-splitting means, e.g. dichroic mirrors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/20—Optical components
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/20—Optical components
    • H02S40/22—Light-reflecting or light-concentrating means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

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  • Photovoltaic Devices (AREA)
JP2011275301A 2010-12-17 2011-12-16 光電変換装置 Expired - Fee Related JP5971936B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011275301A JP5971936B2 (ja) 2010-12-17 2011-12-16 光電変換装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010281758 2010-12-17
JP2010281758 2010-12-17
JP2011275301A JP5971936B2 (ja) 2010-12-17 2011-12-16 光電変換装置

Publications (3)

Publication Number Publication Date
JP2012142570A JP2012142570A (ja) 2012-07-26
JP2012142570A5 JP2012142570A5 (cg-RX-API-DMAC7.html) 2015-01-15
JP5971936B2 true JP5971936B2 (ja) 2016-08-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011275301A Expired - Fee Related JP5971936B2 (ja) 2010-12-17 2011-12-16 光電変換装置

Country Status (2)

Country Link
US (1) US9559235B2 (cg-RX-API-DMAC7.html)
JP (1) JP5971936B2 (cg-RX-API-DMAC7.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EA036207B1 (ru) * 2019-08-07 2020-10-14 Федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В.И. Ульянова (Ленина)" (СПбГЭТУ "ЛЭТИ") Солнечный элемент со спектральным разделением солнечного излучения

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US3899359A (en) * 1970-07-08 1975-08-12 John Z O Stachurski Thermoelectric generator
JPS513788A (cg-RX-API-DMAC7.html) 1974-06-28 1976-01-13 Hitachi Ltd
US4023368A (en) * 1975-08-26 1977-05-17 Kelly Donald A High density-third dimension geometry solar panels
JPS5996777A (ja) 1982-11-25 1984-06-04 Sumitomo Electric Ind Ltd 光起電力素子
JP3150376B2 (ja) 1991-09-30 2001-03-26 ローム株式会社 ヘテロ接合バイポーラトランジスタの製法
JPH09260696A (ja) 1996-03-19 1997-10-03 Daido Hoxan Inc 太陽電池
JPH1093117A (ja) 1996-09-11 1998-04-10 Oki Electric Ind Co Ltd 光電変換装置
US5902417A (en) 1996-12-12 1999-05-11 Hughes Electornics Corporation High efficiency tandem solar cells, and operating method
JP3738129B2 (ja) 1998-04-14 2006-01-25 三洋電機株式会社 太陽電池モジュール
EP1126698B1 (en) 1998-10-07 2003-12-10 Hamamatsu Photonics K.K. High-speed vision sensor
JP2002170974A (ja) 2000-11-30 2002-06-14 Canon Inc 空冷方式の冷却機構を備えた太陽電池モジュール
US20030116185A1 (en) * 2001-11-05 2003-06-26 Oswald Robert S. Sealed thin film photovoltaic modules
JP2003333757A (ja) 2002-05-14 2003-11-21 Sony Corp 電源装置
EP2806529B1 (en) 2003-07-07 2023-05-03 Nippon Telegraph And Telephone Corporation Booster
US7497577B2 (en) * 2005-06-09 2009-03-03 Hewlett-Packard Development Company, L.P. Light modulator assembly
CN101765921A (zh) 2006-07-28 2010-06-30 特拉华大学 具有硅清除电池的高效太阳能电池
JP2009545184A (ja) 2006-07-28 2009-12-17 ユニバーシティー、オブ、デラウェア 周囲のシリコンスカベンジャーセルを備えた高効率太陽電池
JP4953745B2 (ja) 2006-09-26 2012-06-13 シャープ株式会社 集光型太陽光発電ユニットおよび集光型太陽光発電装置
US20100078063A1 (en) 2007-08-29 2010-04-01 Barnett Allen M High efficiency hybrid solar cell
JPWO2009041038A1 (ja) 2007-09-25 2011-01-20 有限会社ハイメック 無偏光クロスダイクロイックプリズム、光学ユニット、および投射型表示装置
IT1390779B1 (it) 2008-07-03 2011-09-23 St Microelectronics Srl Dispositivo fotovoltaico a concentrazione e a suddivisione spettrale della radiazione captata
TWM357587U (en) * 2009-01-14 2009-05-21 Sunyen Co Ltd Three-dimensional solar light-receiving device
JP3150376U (ja) * 2009-02-26 2009-05-07 ▲ショウ▼▲ゲン▼科技股▲ふん▼有限公司 立体式太陽エネルギー集光装置

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US20120152314A1 (en) 2012-06-21
US9559235B2 (en) 2017-01-31
JP2012142570A (ja) 2012-07-26

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