JP5964567B2 - Heat treatment method and heat treatment apparatus - Google Patents

Description

  The present invention relates to a heat treatment method and a heat treatment for heating a thin plate-shaped precision electronic substrate (hereinafter simply referred to as “substrate”) such as a semiconductor wafer or a glass substrate for a liquid crystal display device by irradiating flash light. Relates to the device.

  In the semiconductor device manufacturing process, impurity introduction is an indispensable step for forming a pn junction in a semiconductor wafer. Currently, impurities are generally introduced by ion implantation and subsequent annealing. The ion implantation method is a technique in which impurity elements such as boron (B), arsenic (As), and phosphorus (P) are ionized and collided with a semiconductor wafer at a high acceleration voltage to physically perform impurity implantation. The implanted impurities are activated by annealing. At this time, if the annealing time is about several seconds or more, the implanted impurities are deeply diffused by heat, and as a result, the junction depth becomes deeper than required, and there is a possibility that good device formation may be hindered.

  Therefore, in recent years, flash lamp annealing (FLA) has attracted attention as an annealing technique for heating a semiconductor wafer in an extremely short time. Flash lamp annealing is a semiconductor wafer in which impurities are implanted by irradiating the surface of the semiconductor wafer with flash light using a xenon flash lamp (hereinafter, simply referred to as “flash lamp” means xenon flash lamp). Is a heat treatment technique for raising the temperature of only the surface of the material in a very short time (several milliseconds or less).

  The radiation spectral distribution of a xenon flash lamp ranges from the ultraviolet region to the near infrared region, has a shorter wavelength than the conventional halogen lamp, and almost coincides with the fundamental absorption band of a silicon semiconductor wafer. Therefore, when the semiconductor wafer is irradiated with flash light from the xenon flash lamp, the semiconductor wafer can be rapidly heated with little transmitted light. Further, it has been found that if the flash light irradiation is performed for a very short time of several milliseconds or less, only the vicinity of the surface of the semiconductor wafer can be selectively heated. For this reason, if the temperature is raised for a very short time by the xenon flash lamp, only the impurity activation can be performed without deeply diffusing the impurities.

  As a heat treatment apparatus using such a xenon flash lamp, Patent Document 1 discloses that a semiconductor wafer is placed on a hot plate and preheated to a predetermined temperature, and then a desired processing temperature is applied by flash light irradiation from the flash lamp. An apparatus for raising the temperature up to 1 is disclosed. In addition, it has been attempted to heat-treat the film formed on the surface of the semiconductor wafer by flash light irradiation. In Patent Document 2, the edge roughness is improved by flash light irradiation to the resist film after the development process. Is disclosed.

JP 2007-5532 A JP 2001-332484 A

  However, the radiation spectral distribution of a halogen lamp using a tungsten filament is mainly in the infrared region of a relatively long wavelength, whereas the radiation spectral distribution of a xenon flash lamp includes the ultraviolet region. Accordingly, when the semiconductor wafer is irradiated with flash light from the xenon flash lamp, ultraviolet light is also irradiated. When the silicon semiconductor wafer is irradiated with ultraviolet light that exerts a strong chemical action, the silicon crystal may be damaged.

  In the technique disclosed in Patent Document 2, flash light irradiation is performed on a resist film after development processing. However, flash light irradiation is performed on a resist film before development processing, for example, a resist film immediately after coating formation or immediately after exposure. An application of performing so-called post-applied bake (PAB) or post-exposure bake (PEB) is also conceivable. However, when visible light and ultraviolet light having a relatively short wavelength contained in flash light from a xenon flash lamp are irradiated onto the resist film before development processing, the entire resist film is exposed to inhibit pattern formation. Problems arise.

  The present invention has been made in view of the above problems, and an object thereof is to provide a heat treatment method and a heat treatment apparatus capable of performing flash heat treatment while suppressing adverse effects on a substrate.

In order to solve the above-mentioned problems, the invention of claim 1 is a heat treatment method for heating a substrate on which a resist film is formed by irradiating the substrate with flash light. Holding step, a filter installation step of installing a filter that cuts light in a wavelength range that the resist film is exposed between the holding unit and the flash lamp, and emitting flash light from the flash lamp, and a flash light irradiation step of irradiating the flash light cut light of the wavelength region from the flash light to the substrate by said filter, said filter is a Rukoto formed by dissolving the metal in quartz glass Features.

Further, the invention of claim 2 is the heat treatment method according to the invention of claim 1 , wherein, in the filter installation step, a plurality of filters for cutting light in different wavelength ranges are prepared, and the holding means among the plurality of filters A filter is selected and installed according to the type of substrate held in the substrate.

The invention of claim 3 is the heat treatment method according to the invention of claim 1 , wherein in the filter installation step, a filter for cutting ultraviolet light is installed, and in the flash light irradiation step, ultraviolet light is emitted from the flash light. Cut and irradiate the substrate.

According to a fourth aspect of the present invention, in the heat treatment method according to the first aspect of the present invention, in the filter installation step, a plurality of filters are stacked and installed.

The invention according to claim 5 is the heat treatment method according to claim 1 , further comprising a filter temperature adjusting step for adjusting the temperature of the filter installed between the holding means and the flash lamp. To do.

According to a sixth aspect of the present invention, in a heat treatment apparatus for heating a substrate on which a resist film is formed by irradiating flash light, the chamber containing the substrate, and the substrate in the chamber A holding unit for holding, a flash lamp for irradiating the substrate held by the holding unit with flash light, and a light in a wavelength region that is provided between the holding unit and the flash lamp and is exposed to the resist film. And a filter for cutting , wherein the filter is formed by dissolving a metal in quartz glass .

The invention of claim 7 is the heat treatment apparatus according to the invention of claim 6 , further comprising a plurality of filters for cutting light in different wavelength ranges, and the designated filter among the plurality of filters is connected to the holding means and the It further comprises a filter insertion mechanism that is inserted between the flash lamp and the flash lamp.

According to an eighth aspect of the present invention, in the heat treatment apparatus according to the sixth aspect of the present invention, the filter cuts ultraviolet light.

The ninth aspect of the invention is the heat treatment apparatus according to the sixth aspect of the invention, further comprising a temperature adjustment mechanism for adjusting the temperature of the filter provided between the holding means and the flash lamp. .

According to the first to fifth aspects of the present invention, the substrate is irradiated with flash light that is obtained by cutting light in the wavelength region that the resist film sensitizes . Light in the wavelength band is selectively irradiated, and flash heat treatment can be performed while suppressing adverse effects on the substrate.

In particular, according to the invention of claim 2 , a plurality of filters for cutting light in different wavelength ranges are prepared, and a filter corresponding to the type of the substrate is selected and installed among the plurality of filters. It is possible to irradiate flash light in which light in an appropriate wavelength range is cut.

In particular, according to the fourth aspect of the present invention, since a plurality of filters are installed in an overlapping manner, variations in the wavelength range of the light cut from the flash light can be expanded.

In particular, according to the invention of claim 5 , since the temperature of the filter installed between the holding means and the flash lamp is controlled, it is possible to prevent the change in the optical characteristics of the filter due to the temperature rise caused by the flash light irradiation. it can.

Further, according to the inventions of claims 6 to 9 , since the filter for cutting the light in the wavelength region to which the resist film is exposed is provided between the holding means and the flash lamp, the light in the wavelength region is cut. The flash light is irradiated onto the substrate, and the flash heat treatment can be performed while suppressing adverse effects on the substrate.

In particular, according to the invention of claim 7 , a plurality of filters for cutting light of different wavelength ranges are provided, and a specified filter among the plurality of filters is inserted between the holding means and the flash lamp. It is possible to irradiate flash light obtained by cutting light in an appropriate wavelength range every time.

In particular, according to the ninth aspect of the invention, since the temperature adjusting mechanism for adjusting the temperature of the filter provided between the holding means and the flash lamp is provided, the change in the optical characteristics of the filter due to the temperature rise caused by the flash light irradiation. Can be prevented.

It is a figure which shows the principal part structure of the heat processing apparatus which concerns on this invention. It is sectional drawing which shows the structure of a holding plate. It is a top view of a blowing plate. It is a flowchart which shows the process sequence of the semiconductor wafer in the heat processing apparatus of FIG. It is a figure which shows the change of the surface temperature of a semiconductor wafer. It is a figure which shows the radiation spectral distribution of a xenon flash lamp. It is a figure which shows the example which installed the filter of several sheets in piles.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 is a diagram showing a main configuration of a heat treatment apparatus 1 according to the present invention. The heat treatment apparatus 1 is a flash lamp annealing apparatus for heating a semiconductor wafer W by irradiating a disk-shaped semiconductor wafer W as a substrate with flash light irradiation. In the heat treatment apparatus 1 of this embodiment, the semiconductor wafer W on which a thin film such as a resist film is formed is irradiated with flash light to heat the thin film. In FIG. 1 and the subsequent drawings, the size and number of each part are exaggerated or simplified as necessary for easy understanding.

  The heat treatment apparatus 1 mainly includes a substantially cylindrical chamber 6 that accommodates a semiconductor wafer W, a holding plate 7 that holds the semiconductor wafer W in the chamber 6, and a semiconductor wafer W held by the holding plate 7. A flash irradiation unit 5 that irradiates flash light, and a filter mechanism 2 that inserts and removes the filter 20 between the chamber 6 and the flash irradiation unit 5 are provided. The heat treatment apparatus 1 also includes a gas supply unit 8 that supplies a processing gas into the chamber 6 and an exhaust unit 9 that exhausts the chamber 6. Furthermore, the heat treatment apparatus 1 includes a control unit 3 that controls each of these units to execute a flash light irradiation process.

  The chamber 6 is provided below the flash irradiation unit 5 and includes a chamber side portion 63 having a substantially cylindrical inner wall and a chamber bottom portion 62 that covers a lower portion of the chamber side portion 63. A space surrounded by the chamber side 63 and the chamber bottom 62 is defined as a heat treatment space 65. A chamber window 61 is attached to the upper opening of the chamber 6 to close it.

  The chamber window 61 constituting the ceiling portion of the chamber 6 is a disk-shaped member made of quartz, and functions as a quartz window that transmits the flash light emitted from the flash irradiation unit 5 to the heat treatment space 65. The chamber bottom 62 and the chamber side 63 constituting the main body of the chamber 6 are formed of, for example, a metal material having excellent strength and heat resistance such as stainless steel.

  Further, in order to maintain the airtightness of the heat treatment space 65, the chamber window 61 and the chamber side portion 63 are sealed by an O-ring (not shown). That is, an O-ring is sandwiched between the lower peripheral edge portion of the chamber window 61 and the chamber side portion 63 to prevent gas from flowing in and out from the gap.

  The chamber side 63 is provided with a transfer opening 66 for carrying in and out the semiconductor wafer W. The transfer opening 66 can be opened and closed by a gate valve (not shown). When the transfer opening 66 is opened, the semiconductor wafer W can be carried into and out of the chamber 6 by a transfer robot (not shown). When the transfer opening 66 is closed, the heat treatment space 65 becomes a sealed space in which ventilation with the outside is blocked.

  The holding plate 7 is a substantially disk-shaped member made of metal (for example, aluminum), and the semiconductor wafer W is placed in the chamber 6 to be in a horizontal position (the normal direction of the main surface is along the vertical direction). ). FIG. 2 is a cross-sectional view showing the configuration of the holding plate 7. The holding plate 7 incorporates a heater 71 and a water-cooled tube 72. The heater 71 is composed of a resistance heating wire such as a nichrome wire, and generates heat by receiving power supply from a power supply source (not shown) to heat the holding plate 7. The water cooling pipe 72 cools the holding plate 7 when cooling water supplied from a cooling water supply source (not shown) flows.

  Both the heater 71 and the water cooling pipe 72 are provided so as to circulate inside the holding plate 7. The heater 71 and the water-cooled tube 72 are provided with a uniform arrangement density at least in a region of the holding plate 7 facing the semiconductor wafer W to be placed. For this reason, the heater 71 and the water cooling tube 72 can uniformly heat and cool the region. The control unit 3 controls the power supply amount to the heater 71 and the cooling water supply amount to the water cooling pipe 72.

  A temperature sensor 73 configured using a thermocouple is disposed inside the holding plate 7. The temperature sensor 73 measures the temperature near the upper surface of the holding plate 7. A measurement result by the temperature sensor 73 is transmitted to the control unit 3. A plurality of temperature sensors 73 may be provided in a region facing the semiconductor wafer W on which the holding plate 7 is placed.

A plurality (three in this embodiment) of proximity balls 75 made of a member such as alumina (Al ₂ O ₃ ) is disposed on the upper surface of the holding plate 7. The three proximity balls 75 are arranged such that the upper ends thereof protrude from the upper surface of the holding plate 7 by a minute amount. For this reason, when the semiconductor wafer W is supported by the three proximity balls 75, a minute gap called a proximity gap is formed between the back surface of the semiconductor wafer W and the upper surface of the holding plate 7. A susceptor may be installed on the upper surface of the holding plate 7 and the semiconductor wafer W may be supported by the susceptor.

  The semiconductor wafer W placed on the holding plate 7 via the three proximity balls 75 is adjusted to a predetermined temperature by the heater 71 and the water cooling tube 72. That is, the heater 71 heats the semiconductor wafer W held on the holding plate 7, and the water-cooled tube 72 cools the semiconductor wafer W. As a result, the temperature of the semiconductor wafer W is adjusted to a predetermined temperature.

  When the temperature of the semiconductor wafer W held on the holding plate 7 is controlled, the amount of power supplied to the heater 71 and the heater 71 so that the temperature of the holding plate 7 measured by the temperature sensor 73 becomes a predetermined temperature set in advance. The amount of cooling water supplied to the water cooling pipe 72 is controlled by the control unit 3. That is, the temperature control of the holding plate 7 by the control unit 3 is feedback control, and more specifically, PID (Proportional, Integral, Derivative) control is performed.

  In the present embodiment, since both the heater 71 as the heating means and the water cooling pipe 72 as the cooling means are provided on the holding plate 7, the semiconductor wafer W held on the holding plate 7 by these cooperation is about room temperature to about 500 ° C. The temperature can be adjusted to a wide range of temperatures.

  Returning to FIG. 1, the holding plate 7 is provided with a plurality of (three in this embodiment) lift pins 77 that appear and disappear on the upper surface thereof. The upper end height positions of the three lift pins 77 are included in the same horizontal plane. The three lift pins 77 are moved up and down along the vertical direction by an air cylinder 78. Each lift pin 77 moves up and down along the inside of an insertion hole that penetrates the holding plate 7 vertically. When the air cylinder 78 raises the three lift pins 77, the tips of the lift pins 77 protrude from the upper surface of the holding plate 7. Further, when the air cylinder 78 lowers the three lift pins 77, the tips of the lift pins 77 are embedded in the insertion holes of the holding plate 7.

  A blowing plate 68 is provided above the heat treatment space 65 and immediately below the chamber window 61. FIG. 3 is a plan view of the blowing plate 68. The blowing plate 68 is a disk-shaped member made of quartz, and is installed in a horizontal posture so as to face the surface of the semiconductor wafer W held on the holding plate 7. As shown in FIG. 3, a large number of discharge holes 69 are formed in the blowing plate 68. Specifically, a plurality of discharge holes 69 are formed at a uniform density in the region of the blowing plate 68 facing at least the surface of the semiconductor wafer W held on the holding plate 7.

The gas supply unit 8 supplies a processing gas to a gas reservoir space 67 formed between the chamber window 61 and the blowing plate 68. The gas supply unit 8 of this embodiment includes an inert gas supply unit 81 and a reactive gas supply unit 84. The inert gas supply unit 81 includes an inert gas supply source 82 and a valve 83, and supplies the inert gas to the gas reservoir space 67 by opening the valve 83. The reactive gas supply unit 84 includes a reactive gas supply source 85 and a valve 86, and supplies the reactive gas to the gas reservoir space 67 by opening the valve 86. In addition, as the inert gas supply source 82 and the reactive gas supply source 85, you may make it comprise with the gas tank and feed pump which were provided in the heat processing apparatus 1, and the heat processing apparatus 1 is installed. I Ru using the utility of the factory may be Unishi.

Here, the “inert gas” is a gas having poor reactivity with the material of the semiconductor wafer W and the thin film formed on the surface thereof, such as nitrogen (N ₂ ), argon (Ar), and helium (He). is there. The “reactive gas” is a gas rich in reactivity with the material of the semiconductor wafer W and the thin film formed on the surface, and oxygen (O ₂ ), hydrogen (H ₂ ), chlorine (Cl ₂ ), water vapor (H ₂ O), hydrogen chloride (HCl), ozone (O ₃ ), ammonia (NH ₃ ) and the like, bromine (Br) -based compound gas and fluorine (F) -based compound gas are applicable. Depending on the purpose of the treatment, nitrogen can also be a reactive gas. Further, the reactive gas supply unit 84 may supply humidified air in which the temperature and humidity are adjusted and the ammonia component is removed. In the present specification, these inert gas and reactive gas are collectively referred to as “processing gas” for processing.

  The processing gas supplied from the gas supply unit 8 to the gas reservoir space 67 is discharged downward from a plurality of discharge holes 69 formed in the blowing plate 68. At this time, since the passage resistance of the fluid in the gas reservoir space 67 is smaller than the passage resistance of the discharge hole 69, the processing gas supplied from the gas supply unit 8 once flows so as to expand in the gas reservoir space 67 and then plural. That is, the discharge holes 69 are uniformly discharged. The plurality of discharge holes 69 are provided at a uniform density in a region facing the semiconductor wafer W held on the holding plate 7. Therefore, the processing gas is uniformly sprayed from the blowing plate 68 over the entire surface of the semiconductor wafer W held on the holding plate 7.

  The exhaust unit 9 includes an exhaust device 91 and a valve 92, and exhausts the atmosphere in the chamber 6 from the exhaust port 93 by opening the valve 92. The exhaust port 93 is a slit formed in the chamber side portion 63 so as to surround the holding plate 7. The height position where the exhaust port 93 is formed is equal to or lower than the height position of the semiconductor wafer W held by the holding plate 7, and is preferably slightly lower than the semiconductor wafer W. The exhaust unit 9 exhausts air from a slit-shaped exhaust port 93 formed so as to surround the holding plate 7, whereby gas is uniformly discharged from the periphery of the semiconductor wafer W held on the holding plate 7. Become.

  As the exhaust device 91, an exhaust utility of a factory where the vacuum pump or the heat treatment device 1 is installed can be used. When a vacuum pump is employed as the exhaust device 91 and the atmosphere of the heat treatment space 65 which is a sealed space is exhausted without supplying the processing gas from the gas supply unit 8, the inside of the chamber 6 can be decompressed to a vacuum atmosphere. Further, even when a vacuum pump is not used as the exhaust device 91, the inside of the chamber 6 is decompressed to an atmospheric pressure lower than the atmospheric pressure by exhausting without supplying the processing gas from the gas supply unit 8. Can do.

  The flash irradiation unit 5 is provided above the chamber 6. The flash irradiating unit 5 is provided so as to cover a plurality of light sources (30 in the present embodiment, but only eight are shown in FIG. 1 for the sake of convenience in illustration) and the upper part of the light source. And a reflector 52. The flash irradiation unit 5 irradiates the semiconductor wafer W held by the holding plate 7 in the chamber 6 with flash light from the flash lamp FL via the quartz chamber window 61 and the blowing plate 68.

  Each of the plurality of flash lamps FL is a rod-shaped lamp having a long cylindrical shape, and the longitudinal direction of each of the flash lamps FL is along the main surface of the semiconductor wafer W held by the holding plate 7 (that is, along the horizontal direction). They are arranged in a plane so as to be parallel to each other. Therefore, the plane formed by the arrangement of the flash lamps FL is also a horizontal plane.

  In the present embodiment, a xenon flash lamp is used as the flash lamp FL. The xenon flash lamp FL has a rod-shaped glass tube (discharge tube) in which xenon gas is sealed and an anode and a cathode connected to a capacitor at both ends thereof, and an outer peripheral surface of the glass tube. And a triggered electrode. Since xenon gas is an electrical insulator, electricity does not flow into the glass tube under normal conditions even if electric charges are accumulated in the capacitor. However, when the insulation is broken by applying a high voltage to the trigger electrode, the electricity stored in the capacitor instantaneously flows into the glass tube due to the discharge between the electrodes at both ends, and the excitation of the xenon atoms or molecules at that time Light is emitted. In such a xenon flash lamp FL, the electrostatic energy stored in the capacitor in advance is converted into an extremely short light pulse of 0.1 millisecond to 100 millisecond. It has the feature that it can irradiate strong light.

  In addition, the reflector 52 is provided above the plurality of flash lamps FL so as to cover all of them. The basic function of the reflector 52 is to reflect the flash light emitted from the plurality of flash lamps FL toward the holding plate 7. The reflector 52 is formed of an aluminum alloy plate, and the surface (the surface facing the flash lamp FL) is roughened by blasting to exhibit a satin pattern.

  The filter mechanism 2 is provided on the side of the chamber 6 and the flash irradiation unit 5. The filter mechanism 2 includes a plurality of (in this embodiment, five) filters 20, an advancing / retreating mechanism unit 21 that individually moves the plurality of filters 20 back and forth, an elevating mechanism unit 22 that raises and lowers the advancing / retreating mechanism unit 21, and Is provided. The filter mechanism 2 inserts any one of the five filters 20 into the space between the chamber 6 and the flash irradiation unit 5.

  Each of the plurality of filters 20 is a plate-like optical filter that covers the chamber window 61. Each filter 20 is formed by dissolving a metal such as barium (Ba), arsenic (As), antimony (Sb), and cadmium (Cd) in quartz glass, and transmits light in a predetermined wavelength range from transmitted light. Cut by reflecting or absorbing. More specifically, at least one metal selected from the group consisting of barium, arsenic, antimony and cadmium is dissolved and contained in quartz glass. Depending on the type of metal to be dissolved, the plurality of filters 20 shield light in different wavelength ranges. For example, each of the five filters 20 of the present embodiment cuts light in a wavelength range of 300 nm or less, 350 nm or less, 400 nm or less, 450 nm or less, or 500 nm or less.

  In general, ultraviolet light is an electromagnetic wave having a wavelength of 400 nm or less, and the five filters 20 of the present embodiment mainly cut ultraviolet light. That is, the filter 20 that cuts wavelength ranges of 300 nm or less, 350 nm or less, and 400 nm or less cuts ultraviolet light in the wavelength ranges of 300 nm or less, 350 nm or less, and 400 nm or less, respectively. In addition, the filter 20 that cuts the wavelength range of 450 nm or less and 500 nm or less cuts part of the visible light (purple to blue) in addition to the ultraviolet light.

  The five filters 20 are individually connected to the advance / retreat mechanism 21 in a horizontal posture. The advancing / retreating mechanism unit 21 incorporates a driving mechanism (not shown), and the five driving filters 20 are individually moved forward and backward along the horizontal direction by the driving mechanism. As such a drive mechanism, various known mechanisms that move forward and backward along one direction, such as a telescopic mechanism or a slide drive mechanism, can be employed.

  The advance / retreat mechanism 21 is connected to the lifting mechanism 22. The elevating mechanism unit 22 has a built-in elevating mechanism (not shown), and the elevating mechanism unit 21 and the five filters 20 are moved up and down collectively by the elevating mechanism. As such an elevating mechanism, various known mechanisms that move up and down along the vertical direction, such as a slide drive mechanism using a feed screw or a belt, can be adopted.

  A filter insertion mechanism for inserting the filter 20 into the space between the chamber 6 and the flash irradiation unit 5 is configured by the advance / retreat mechanism unit 21 and the elevating mechanism unit 22. The filter mechanism 2 moves the five filters 20 up and down by the lifting mechanism unit 22 and moves one of them to a height position equal to the space between the chamber 6 and the flash irradiation unit 5. Then, the filter mechanism 2 moves the filter 20 forward by the advance / retreat mechanism unit 21 and inserts the filter 20 into the space between the chamber 6 and the flash irradiation unit 5.

  A temperature adjustment mechanism 40 is provided on the side of the chamber 6 and the flash irradiation unit 5. The temperature adjustment mechanism 40 blows the temperature adjustment gas to the filter 20 inserted in the space between the chamber 6 and the flash irradiation unit 5. As the temperature adjusting gas, for example, air adjusted to a predetermined temperature may be used, but helium, argon or the like excellent in cooling ability may be used.

  The control unit 3 controls the various operation mechanisms provided in the heat treatment apparatus 1. The configuration of the control unit 3 as hardware is the same as that of a general computer. That is, the control unit 3 stores a CPU that performs various arithmetic processes, a ROM that is a read-only memory that stores basic programs, a RAM that is a readable and writable memory that stores various information, control software, data, and the like. It is configured with a magnetic disk. The processing in the heat treatment apparatus 1 proceeds as the CPU of the control unit 3 executes a predetermined processing program.

  Next, a processing procedure of the semiconductor wafer W in the heat treatment apparatus 1 having the above configuration will be described. FIG. 4 is a flowchart showing a processing procedure for the semiconductor wafer W in the heat treatment apparatus 1. FIG. 5 is a diagram showing changes in the surface temperature of the semiconductor wafer W. The processing procedure of the heat treatment apparatus 1 described below proceeds by the control unit 3 controlling each operation mechanism of the heat treatment apparatus 1.

  First, a gate valve (not shown) is opened to open the transfer opening 66, and a semiconductor wafer W to be processed is transferred into the chamber 6 through the transfer opening 66 by a transfer robot outside the apparatus (step S1). . The semiconductor wafer W to be processed here is a semiconductor substrate immediately after a thin film of photoresist (resist film) is formed on the surface and pattern exposure processing is performed.

  The resist film is formed, for example, by rotating the semiconductor wafer W, discharging the photoresist coating liquid to the center of rotation, and spreading the coating liquid by centrifugal force to form a photoresist thin film on the surface of the semiconductor wafer W. The so-called spin coating method may be used. In the present embodiment, a chemically amplified resist is used as the photoresist.

  The resist film is baked by subjecting the semiconductor wafer W having the resist film formed on the surface to a heat treatment (post-coating bake treatment). Further, pattern exposure processing is performed on the semiconductor wafer W. In this embodiment, since a chemically amplified resist is used, an acid is generated by a photochemical reaction in the exposed portion of the resist film formed on the semiconductor wafer W. These resist coating process, post-coating bake process and pattern exposure process are all performed by an apparatus different from the heat treatment apparatus 1 according to the present invention. Then, the semiconductor wafer W immediately after the pattern exposure process is completed is carried into the chamber 6 of the heat treatment apparatus 1.

  The hand of the transfer robot holding the semiconductor wafer W on which the resist film is formed and the pattern exposure process is completed enters the chamber 6 through the transfer opening 66 and stops immediately above the holding plate 7. Subsequently, the three lift pins 77 rise to receive the semiconductor wafer W from the hand. A time t1 shown in FIG. 5 is a time when the lift pins 77 receive the semiconductor wafer W. Thereafter, the hand of the transfer robot moves out of the chamber 6 and the transfer opening 66 is closed, whereby the heat treatment space 65 in the chamber 6 is made a sealed space.

  Next, an appropriate filter 20 is selected from the plurality of filters 20 included in the filter mechanism 2 and installed between the chamber 6 and the flash irradiation unit 5 (step S2). An appropriate filter 20 to be installed is defined based on the type of semiconductor wafer W to be processed and the purpose of heat treatment. The type of the semiconductor wafer W includes a difference in the film formed on the surface thereof. In the present embodiment, a chemically amplified resist film is formed on the surface of the semiconductor wafer W, and post-exposure baking is performed in the heat treatment apparatus 1. The chemically amplified resist is a photoresist corresponding to a pattern exposure process using a KrF excimer laser (wavelength 248 nm) or an ArF excimer laser (wavelength 193 nm) having a relatively low exposure intensity. Accordingly, when flash light including an ultraviolet region having a wavelength of 300 nm or less is irradiated from the flash lamp FL during the post-exposure baking process in the heat treatment apparatus 1, the resist film may be exposed to the flash light and hinder pattern formation.

  FIG. 6 is a diagram showing a radiation spectral distribution of the xenon flash lamp FL. As shown in the figure, the flash light emitted from the xenon flash lamp FL includes ultraviolet light having a wavelength of 300 nm or less. Therefore, since the resist film is exposed when the semiconductor wafer W is irradiated with flash light as it is, it is desirable to cut light in the ultraviolet region having a wavelength of 300 nm or less from the flash light.

  On the other hand, in the radiation spectral distribution of FIG. 6, the intensity is relatively high in the wavelength region having a wavelength of 300 nm or more, and particularly in the wavelength region of 400 nm to 500 nm. Therefore, from the viewpoint of heat treatment efficiency by flash light irradiation, it is desirable to use light having a wavelength range of 400 nm or more, and it is preferable to use light having a wavelength range of 300 nm or more if possible.

  In the present embodiment, considering these points comprehensively, the filter 20 that cuts ultraviolet light in the wavelength region of 300 nm or less is selected from the five filters 20 included in the filter mechanism 2. Specifically, a filter 20 that cuts light in a wavelength region of 300 nm or less is specified in advance in a recipe that describes a processing flow and conditions in the heat treatment apparatus 1. This designation may be performed by an operator of the heat treatment apparatus 1 through an input unit provided in the control unit 3, for example.

  Based on the description of the recipe, the control unit 3 controls the filter mechanism 2 so that the filter 20 that cuts light in the specified wavelength region of 300 nm or less is installed between the chamber 6 and the flash irradiation unit 5. . Under the control of the control unit 3, the filter mechanism 2 moves up and down the five filters 20 collectively by the lifting mechanism unit 22, and the filter 20 that cuts light in a wavelength region of 300 nm or less includes the chamber 6 and the flash irradiation unit. 5 is moved to a height position equal to the space between them. Then, the filter mechanism 2 moves the filter 20 forward by the advance / retreat mechanism unit 21 and inserts the filter 20 into the space between the chamber 6 and the flash irradiation unit 5. Accordingly, a filter 20 that cuts light in a wavelength region of 300 nm or less is installed between the holding plate 7 in the chamber 6 and the flash lamp FL of the flash irradiation unit 5.

  Further, after the heat treatment space 65 is closed, the atmosphere in the chamber 6 is adjusted (step S3). In the present embodiment, humidified air is supplied from the gas supply unit 8 into the chamber 6, and the exhaust unit 9 exhausts the chamber 6. Thereby, the heat treatment space 65 in the chamber 6 becomes a humidified air atmosphere. Note that the order from step S1 to step S3 is not necessarily limited to the example of FIG. 4. For example, the filter 20 may be installed before the semiconductor wafer W is loaded, or the chamber 6 may be preceded. May be a humidified air atmosphere.

  Next, the three lift pins 77 that support the semiconductor wafer W are lowered and embedded in the insertion holes of the holding plate 7. In the process of lowering the lift pins 77, the semiconductor wafer W is transferred from the lift pins 77 to the upper surface of the holding plate 7 at the time t2 in FIG.

  The holding plate 7 is preliminarily adjusted to a predetermined temperature by the heater 71 and the water cooling pipe 72. The temperature control temperature T1 of the holding plate 7 can be set to an appropriate temperature according to the type of the semiconductor wafer W and the purpose of the heat treatment. The temperature control temperature T1 may be normal temperature. Based on the measurement result of the temperature sensor 73, the control unit 3 controls the power supply amount to the heater 71 and the cooling water supply amount to the water cooling pipe 72 so that the temperature of the holding plate 7 becomes the temperature control temperature T1. . Thereby, the temperature of the upper surface of the holding plate 7 is also maintained at the temperature control temperature T1.

  The lift pins 77 are lowered and the semiconductor wafer W is placed on the holding plate 7 whose temperature is adjusted to a predetermined temperature, so that the holding plate 7 for the semiconductor wafer W from the time t2 (strictly, the heater 71 and the water-cooled tube 72). Is started (step S4). As a result, the temperature of the semiconductor wafer W is accurately adjusted and maintained at the predetermined temperature control temperature T1. In FIG. 5, the temperature adjustment temperature T1 is described as a temperature different from the room temperature (RT). However, when performing post-exposure baking processing as in the present embodiment, the temperature adjustment temperature T1 is set to the room temperature, and the semiconductor wafer W May be accurately maintained at room temperature.

  After the semiconductor wafer W is placed and held on the holding plate 7, it waits for a predetermined time (step S5). During this time, the entire semiconductor wafer W including the resist film formed on the surface is accurately adjusted to the temperature T1. Then, at a time t3 when a predetermined time has elapsed since the lift pin 77 descends and the temperature adjustment of the semiconductor wafer W is started at the time t2, the flash lamp FL of the flash irradiation unit 5 is transferred from the flash lamp FL to the holding plate 7 under the control of the control unit 3. Flash light is irradiated toward the held semiconductor wafer W (step S6).

  Flash light (including flash light reflected by the reflector 52) emitted from the flash lamp FL passes through the filter 20 inserted in the space between the chamber 6 and the flash irradiation unit 5 and then enters the chamber 6. To do. In the present embodiment, since the filter 20 that cuts light in the wavelength region of 300 nm or less is installed between the chamber 6 and the flash irradiation unit 5, the wavelength region of 300 nm or less when the flash light passes through the filter 20. The light is cut. As a result, flash light from which ultraviolet light having a wavelength region of 300 nm or less is cut enters the heat treatment space 65 in the chamber 6. Then, the flash light is applied to the surface of the semiconductor wafer W held on the holding plate 7, and the resist film formed on the surface is heated.

  The flash light emitted from the flash lamp FL is an extremely short and strong flash light whose irradiation time is about 0.1 milliseconds or more and 100 milliseconds or less, in which electrostatic energy stored in advance is converted into an extremely short light pulse. . The surface temperature of the semiconductor wafer W irradiated with flash light from the flash lamp FL instantaneously increases to the processing temperature T2, and then rapidly decreases to the temperature control temperature T1. By such flash heating, a chain reaction such as cross-linking / polymerization of the resist resin proceeds using the active species generated in the film of the chemically amplified resist by the photochemical reaction during pattern exposure as an acid catalyst. Thereby, post-exposure baking is performed in which the solubility of the resist film in the developer is locally changed only in the exposed portion. That is, in the present embodiment, post-exposure baking is performed by instantaneously raising the surface temperature of the semiconductor wafer W by flash light irradiation. Note that the time from time t3 when the surface temperature of the semiconductor wafer W starts to be increased by irradiation with flash light to time t4 when the temperature is decreased to the temperature control temperature T1 is 1 second or less.

  Further, light of a wavelength region of 300 nm or less is cut from the flash light irradiated on the surface of the semiconductor wafer W. For this reason, it is possible to prevent the chemically amplified resist film from being exposed to light caused by flash light irradiation. On the other hand, the flash light irradiated on the surface of the semiconductor wafer W includes light having a relatively high intensity on the longer wavelength side than the wavelength of 300 nm. Therefore, energy necessary for the post-exposure baking process can be secured, and the surface temperature of the semiconductor wafer W can be raised to the processing temperature T2 by flash light irradiation.

  After the post-exposure bake process by flash light irradiation is completed, the semiconductor wafer W is held on the holding plate 7 and waits for a predetermined time (step S7). During this time, the entire semiconductor wafer W including the resist film after baking is maintained at the temperature control temperature T1. That is, the control unit 3 supplies the power to the heater 71 of the holding plate 7 and the water cooling pipe 72 so as to maintain the semiconductor wafer W at a predetermined temperature control temperature T1 both before and after the flash light is irradiated from the flash lamp FL. Control the amount of cooling water supplied. Thereby, since the flash light irradiation is performed while the semiconductor wafer W is accurately maintained at the temperature control temperature T1, the temperature history between the different semiconductor wafers W can be made uniform. Moreover, the inside of the chamber 6 is a humidified air atmosphere before and after the flash light irradiation.

  Eventually, when the predetermined time elapses and time t5 is reached, the three lift pins 77 are raised, and the semiconductor wafer W placed on the holding plate 7 is pushed up and separated from the holding plate 7 (step S8). ). When the semiconductor wafer W is separated from the holding plate 7, the temperature control of the semiconductor wafer W by the holding plate 7 ends. Note that the time (temperature adjustment time) from the time t2 when the temperature adjustment to the semiconductor wafer W is started to the time t5 when the temperature adjustment is completed is about several tens of seconds.

  Thereafter, the transfer opening 66 is opened again, and the hand of the transfer robot enters the chamber 6 from the transfer opening 66 and stops immediately below the semiconductor wafer W. Subsequently, when the lift pins 77 are lowered, the semiconductor wafer W is transferred from the lift pins 77 to the transfer robot at time t6. Then, when the hand of the transfer robot that has received the semiconductor wafer W is withdrawn from the chamber 6, the semiconductor wafer W is unloaded from the chamber 6, and the post-exposure bake process in the heat treatment apparatus 1 is completed (step S9).

  A developing solution is supplied to the surface of the semiconductor wafer W carried out of the heat treatment apparatus 1 to perform development processing. The development process may be performed, for example, by so-called paddle development in which a developer is kept on the surface of a stationary semiconductor wafer W for a certain period of time. Such development processing is also performed in an apparatus different from the heat treatment apparatus 1.

  In this embodiment, a filter 20 that cuts ultraviolet light in a wavelength region of 300 nm or less is installed between the holding plate 7 in the chamber 6 and the flash lamp FL of the flash irradiation unit 5 to perform flash light irradiation. Yes. For this reason, when the flash light emitted from the flash lamp FL passes through the filter 20, light having a wavelength region of 300 nm or less is cut. Therefore, light having a wavelength region of 300 nm or less is cut from the flash light applied to the surface of the semiconductor wafer W, and the resist film can be prevented from being exposed to the flash light.

  On the other hand, since the flash light irradiated on the surface of the semiconductor wafer W includes light having a wavelength longer than the wavelength of 300 nm, which has a relatively high intensity, the surface temperature of the semiconductor wafer W is required by flash light irradiation. The temperature can be raised to the processing temperature T2. That is, by installing the filter 20 that cuts ultraviolet light in the wavelength region of 300 nm or less, the semiconductor wafer W is not irradiated with light in the wavelength region of 300 nm or less, and the remaining wavelength region (longer wavelength than 300 nm). Light is selectively irradiated, and flash heat treatment can be performed to a necessary processing temperature while preventing unnecessary exposure of the resist film. In this embodiment, the case where the post-exposure baking is performed by flash heating has been described as an example. Heat treatment can be performed.

  By the way, in the above example, a typical chemically amplified resist thin film corresponding to the excimer laser was formed on the surface of the semiconductor wafer W, but there are various types of resist films used for photolithography, The wavelength range to be exposed varies depending on the type. Therefore, when the flash heat treatment is performed by the heat treatment apparatus 1 on the semiconductor wafer W on which different types of resist films are formed, the filter 20 also needs to be changed. For example, when using a resist film that is sensitive in a wavelength region of around 350 nm, a filter 20 that cuts light in a wavelength region of 400 nm or less is designated in advance. The control unit 3 controls the filter mechanism 2 so that the filter 20 that cuts light in a specified wavelength region of 400 nm or less is installed between the chamber 6 and the flash irradiation unit 5. Similarly, when using a resist film that is sensitive in a wavelength region around 450 nm, a filter 20 that cuts light in a wavelength region of 500 nm or less is designated in advance. The control unit 3 controls the filter mechanism 2 so as to install the filter 20 that cuts the light in the wavelength region of 500 nm or less.

  As described above, the filter mechanism 2 is provided with a plurality of filters 20 for cutting light in different wavelength ranges, and the optimum filter 20 corresponding to the type of the semiconductor wafer W is selected from the plurality of filters 20 to flush with the chamber 6. It is installed between the irradiation unit 5. Thus, unnecessary exposure can be prevented regardless of the type of resist film. Regardless of the type of resist film, unnecessary exposure of the resist film can be prevented even if a filter 20 that uniformly cuts light in a wavelength region of, for example, 500 nm or less is provided. However, in this case, light having a relatively high intensity in the wavelength range of 300 nm to 500 nm cannot be used in the radiation spectral distribution of the flash lamp FL, so that sufficient heat treatment efficiency may not be obtained. Therefore, it is preferable to select and install the optimum filter 20 according to the type of resist film as in this embodiment.

  In addition to the resist film, various thin films can be formed on the surface of the semiconductor wafer W. For example, an antireflection film, an interlayer insulating film, a ferroelectric film, and the like are formed on the surface of the semiconductor wafer W. Further, a metal film may be formed on the surface of the semiconductor wafer W. Some film types may be damaged by absorbing ultraviolet light. Even if such a thin film damaged by ultraviolet light is formed on the surface of the semiconductor wafer W, the technology according to the present invention can be applied. That is, as in the above embodiment, the optimum filter 20 corresponding to the film type formed on the surface of the semiconductor wafer W is selected and placed between the chamber 6 and the flash irradiation unit 5 to perform flash light irradiation. Thus, the ultraviolet light can be cut from the flash light to prevent the thin film from being damaged.

  In addition, a plurality of types of thin films are often formed on the surface of the semiconductor wafer W. For example, the resist film of the above embodiment is typically formed on a BARC (Bottom Anti-Reflection Coating) which is typically a kind of antireflection film. In the semiconductor wafer W on which a plurality of types of thin films are formed in this way, there is a case where it is desired to perform a process in which only a part of the thin films is heated and the other thin films having low heat resistance are not heated. Even in such a case, by applying the technique according to the present invention, light in a specific wavelength region can be cut from the flash light, and only the part of the thin film can be heated. For example, two types of thin film A and thin film B are formed on the surface of the semiconductor wafer W, the thin film A absorbs light in a wavelength region of 400 nm or more, and the thin film B absorbs light of less than 400 nm. In order to heat only the thin film A, a filter 20 that cuts light in a wavelength region of 400 nm or less is installed. As a result, the surface of the semiconductor wafer W is irradiated with flash light from which light of a wavelength region of 400 nm or less is cut, and only the thin film A absorbs the flash light and is selectively heated.

  Furthermore, the technique according to the present invention can also be applied to flash heating of a semiconductor wafer W in which a silicon base material is exposed without forming a thin film. When strong ultraviolet light is irradiated to the silicon crystal constituting the base material of the semiconductor wafer W, the silicon base material itself may be damaged. For this reason, for example, the filter 20 that cuts light in a wavelength region of 400 nm or less is selected and installed. Thereby, even when the flash light is irradiated, the surface of the semiconductor wafer W is hardly irradiated with ultraviolet light having a wavelength region of 400 nm or less, so that the silicon substrate can be prevented from being damaged.

  Summarizing the above contents, in the technology according to the present invention, the wavelength that adversely affects the semiconductor wafer W (for example, resist film sensitivity, silicon substrate damage, etc.) when irradiated with the flash light emitted from the flash lamp FL as it is. A filter 20 that cuts off the light in the region is selected and placed between the chamber 6 and the flash irradiation unit 5. In this state, flash light is emitted from the flash lamp FL, and the light in the wavelength region is cut from the flash light by the filter 20 and irradiated onto the semiconductor wafer W. Thereby, the flash heat treatment can be performed while suppressing the adverse effect on the semiconductor wafer W.

  The wavelength range that adversely affects the semiconductor wafer W varies depending on the type of the semiconductor wafer W. For this reason, a plurality of filters 20 for cutting light in different wavelength ranges are prepared in the heat treatment apparatus 1, and the filter 20 suitable for the type of the semiconductor wafer W to be processed is selected, and the chamber 6 and the flash irradiation unit are selected. It is desirable to install between 5.

  In addition, the filter 20 that cuts light in a predetermined wavelength region may absorb light in the wavelength region. When the filter 20 absorbs light in the wavelength range due to flash light irradiation, the temperature of the filter 20 itself increases. If it does so, the optical characteristic of the filter 20 will change and there also exists a possibility that the wavelength range to cut may change. For this reason, the temperature control mechanism 40 is provided in the heat treatment apparatus 1, and the temperature control gas temperature-controlled from the temperature control mechanism 40 to the room temperature is blown onto the filter 20 installed between the chamber 6 and the flash irradiation unit 5. Thereby, the temperature of the filter 20 can be maintained in the vicinity of room temperature, and the change of the optical characteristics can be prevented. The temperature control gas 40 may be sprayed by the temperature control mechanism 40 when the filter 20 is located between the chamber 6 and the flash irradiation unit 5 or immediately after the flash light irradiation. You may do it.

  While the embodiments of the present invention have been described above, the present invention can be modified in various ways other than those described above without departing from the spirit of the present invention. For example, in the above embodiment, the filter mechanism 2 is arranged to install the filter 20 specified in the recipe between the chamber 6 and the flash irradiation unit 5 under the control of the control unit 3. Then, the operator of the heat treatment apparatus 1 may manually install the filter 20. It is the operator who decides the filter 20 to be used in consideration of the wavelength range that adversely affects the semiconductor wafer W and the heat treatment efficiency. The filter 20 selected by the operator may be manually placed on the chamber window 61 of the chamber 6. Even in this case, similarly to the above-described embodiment, the flash heat treatment can be performed by cutting the light in the wavelength region that adversely affects the semiconductor wafer W from the flash light.

  In the above embodiment, one filter 20 is selected and installed from the plurality of filters 20, but the present invention is not limited to this, and two or more filters 20 are combined. May be installed. FIG. 7 is a diagram illustrating an example in which a plurality of filters 20 are stacked.

  In the example of FIG. 7, two filters 20 are stacked on the chamber window 61 of the chamber 6. The wavelength ranges cut by the two filters 20 may be the same, may be different, or may partially overlap. For example, when it is desired to completely block light in a specific wavelength range, two filters 20 that cut light in the wavelength range are stacked and used. Further, for example, when it is desired to block light in a wavelength region of 400 nm or less and 800 nm or more, a filter 20 that cuts a wavelength region of 400 nm or less and a filter 20 that cuts a wavelength region of 800 nm or more are stacked and used. For example, when it is desired to change the light blocking rate in a stepwise manner in a wavelength region of 400 nm or less, a filter 20 that cuts a wavelength region of 400 nm or less and a filter 20 that cuts a wavelength region of 300 nm or less are stacked and used. If a plurality of filters 20 are installed in such a manner as described above, variations in the wavelength range of light cut from flash light can be expanded.

  In the above embodiment, the ultraviolet light is mainly cut from the flash light by the filter 20, but the present invention is not limited to this, and visible light and / or infrared light in the radiation spectral distribution of the flash lamp FL is not limited thereto. You may make it cut. For example, when a pattern is formed on a resin film for display applications or the like, flash light from which infrared light is cut is irradiated in order to avoid heating of the resin film having poor heat resistance. Also, for example, only ultraviolet light that cuts visible light and infrared light from flash light in high-k material (high dielectric constant material) deposited by ALD (Atomic Layer Deposition) in oxygen or ozone oxidizing atmosphere Irradiate. By this flash heat treatment using only ultraviolet light, the high-k material can be oxidized to have crystallinity. In this case, the filter 20 selects and irradiates light having a wavelength region effective for processing the semiconductor wafer W from the flash light. Alternatively, both ultraviolet light and infrared light may be cut from the flash light so that only visible light is selectively transmitted. That is, the wavelength range cut from the flash light by the filter 20 can be appropriately selected according to the type of the semiconductor wafer W to be processed and the purpose of the heat treatment. In general, a thin film containing a carbon-based compound such as a resist film absorbs light in the wavelength region from the ultraviolet region to about 500 nm.

  In the above embodiment, the filter 20 is formed by dissolving a metal such as barium in quartz glass. However, the filter 20 is formed by forming a metal or metal oxide thin film on the surface of the quartz glass. You may make it do. However, since such a thin film may be peeled off by a rapid temperature rise during flash light irradiation, it is preferable to dissolve a metal in quartz glass.

  Further, when the types of semiconductor wafers W to be processed in the heat treatment apparatus 1 are limited, the wavelength range to be cut is also specified, so the chamber window 61 of the chamber 6 itself cuts light in that wavelength range. It is good also as a filter to do.

  In the above embodiment, the light of the predetermined wavelength range is cut from the flash light by the filter 20, but the light of the predetermined wavelength range is cut by changing the configuration of the flash lamp FL itself. You may make it do. Specifically, when the gas pressure of the xenon gas sealed in the glass tube of the flash lamp FL is lowered, the radiation spectral distribution in FIG. 6 is shifted to the longer wavelength side. As a result, the ultraviolet light on the short wavelength side can be cut from the flash light itself emitted from the flash lamp FL. Conversely, when cutting long-wavelength infrared light from flash light, the gas pressure of the enclosed xenon gas may be increased. However, if the gas pressure of the xenon gas is changed, the intensity of the flash light may be reduced, or the flash lamp FL may be damaged. It is desirable to cut.

  In the above embodiment, both the heater 71 as the heating means and the water cooling pipe 72 as the cooling means are provided on the holding plate 7, but only one of the heater 71 or the water cooling pipe 72 is attached to the holding plate 7. You may make it provide. However, if both the heater 71 and the water-cooled tube 72 are provided, the temperature of the semiconductor wafer W can be adjusted appropriately over a wide temperature range.

  In the above embodiment, the heater 71 as a heating means is constituted by a resistance heating element. Instead, the semiconductor wafer W is heated by light irradiation heating using a halogen lamp or the like, induction heating, high temperature gas blowing, or the like. You may make it adjust.

  In addition, a rotation mechanism that rotates the holding plate 7 in a horizontal plane may be provided, and the holding plate 7 may be rotated during processing. Thereby, the process gas flow flowing down from the blowing plate 68 can be sprayed more uniformly on the surface of the semiconductor wafer W.

  In the above embodiment, the flash irradiation unit 5 is provided with 30 flash lamps FL. However, the present invention is not limited to this, and the number of flash lamps FL can be any number. .

  The substrate to be processed by the heat treatment technique according to the present invention is not limited to a semiconductor wafer, and may be a glass substrate or a solar cell substrate used for a liquid crystal display device or the like.

DESCRIPTION OF SYMBOLS 1 Heat processing apparatus 2 Filter mechanism 3 Control part 5 Flash irradiation part 6 Chamber 7 Holding plate 8 Gas supply part 9 Exhaust part 20 Filter 21 Advance / retreat mechanism part 22 Lifting mechanism part 40 Temperature control mechanism 61 Chamber window 65 Heat treatment space 81 Inert gas supply 84 Reactive gas supply unit FL Flash lamp W Semiconductor wafer

Claims (9)

A heat treatment method for heating a substrate on which a resist film is formed by irradiating the substrate with flash light,
An accommodating step of accommodating the substrate in the chamber and holding it in the holding means;
A filter installation step of installing a filter that cuts light in a wavelength range that the resist film is exposed between the holding unit and the flash lamp;
A flash light irradiation step of emitting flash light from the flash lamp and irradiating the substrate with flash light obtained by cutting light in the wavelength region from the flash light by the filter ;
Equipped with a,
The filter is formed by dissolving a metal in quartz glass . The heat treatment method according to claim 1,
In the filter installation step, a plurality of filters for cutting light in different wavelength ranges are prepared, and a filter corresponding to the type of substrate held by the holding unit is selected and installed from the plurality of filters. A heat treatment method. The heat treatment method according to claim 1 ,
In the filter installation process, a filter for cutting ultraviolet light is installed,
In the flash light irradiation step, ultraviolet light is cut from the flash light and irradiated to the substrate . The heat treatment method according to claim 1 ,
In the filter installation step, a plurality of filters are installed in a stacked manner. The heat treatment method according to claim 1 ,
A heat treatment method , further comprising a filter temperature adjustment step of adjusting the temperature of a filter installed between the holding means and the flash lamp . A heat treatment apparatus for heating a substrate on which a resist film is formed by irradiating flash light on the substrate,
A chamber for housing the substrate;
Holding means for holding the substrate in the chamber;
A flash lamp for irradiating the substrate held by the holding means with flash light;
A filter that is provided between the holding means and the flash lamp, and cuts light in a wavelength region that the resist film is exposed to;
With
The said filter is formed by melt | dissolving a metal in quartz glass, The heat processing apparatus characterized by the above-mentioned . The heat treatment apparatus according to claim 6, wherein
With multiple filters that cut light in different wavelength ranges,
A heat treatment apparatus, further comprising: a filter insertion mechanism for inserting a specified filter among the plurality of filters between the holding unit and the flash lamp . The heat treatment apparatus according to claim 6, wherein
The heat treatment apparatus characterized in that the filter cuts ultraviolet light . The heat treatment apparatus according to claim 6 , wherein
A heat treatment apparatus , further comprising a temperature adjustment mechanism for adjusting the temperature of a filter provided between the holding unit and the flash lamp .

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