JP5960899B1 - Resin composition for negative-type cationic electrodeposition photoresist, method for producing the same, and coating film formed by electrodeposition coating thereof - Google Patents

Resin composition for negative-type cationic electrodeposition photoresist, method for producing the same, and coating film formed by electrodeposition coating thereof Download PDF

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JP5960899B1
JP5960899B1 JP2015196631A JP2015196631A JP5960899B1 JP 5960899 B1 JP5960899 B1 JP 5960899B1 JP 2015196631 A JP2015196631 A JP 2015196631A JP 2015196631 A JP2015196631 A JP 2015196631A JP 5960899 B1 JP5960899 B1 JP 5960899B1
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賢治 高曲
賢治 高曲
博之 丸田
博之 丸田
幸弘 述金
幸弘 述金
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Abstract

【課題】電子回路基板のさらなる微細化に伴い、高感度であって、しかも耐薬品性をさらに高めた電着フォトレジストが要望されており、これまで種々の検討がなされてきている。特定の粘性挙動を有するネガ型電着フォトレジストは、エッジ部の露出が少ないため良好なレジスト特性を有するが、感度の面では不十分であり、その性能を確保するためには塗膜厚を厚くする対策が必要であるが、ポリマーのTgが高いため塗膜の析出性が悪く、ピンホールが発生しやすいなど作業性に課題があった。【解決手段】水溶性又は水分散性ビニル系共重合体、多官能(メタ)アクリレート及び光重合開始剤を含むネガ型カチオン性電着フォトレジスト用樹脂組成物であって、水溶性又は水分散性ビニル系共重合体として、(A)Tgが5℃以上25℃未満である低Tg共重合体25重量部〜45重量部及び(B)Tgが25℃以上45℃未満の高Tg共重合体55重量部〜75重量部を含み、低Tg共重合体(A)と高Tg共重合体(B)とのTg温度差が5℃〜30℃であることを特徴とするネガ型カチオン性電着フォトレジスト用樹脂組成物。【選択図】なしAlong with further miniaturization of electronic circuit boards, electrodeposition photoresists having high sensitivity and further improved chemical resistance have been demanded, and various studies have been made so far. Negative electrodeposition photoresists with specific viscous behavior have good resist characteristics due to low exposure of the edges, but are insufficient in terms of sensitivity. Although measures to increase the thickness are necessary, there is a problem in workability such that the Tg of the polymer is high and thus the coating film has poor precipitation and pinholes are likely to occur. A negative-type cationic electrodeposition photoresist resin composition comprising a water-soluble or water-dispersible vinyl copolymer, a polyfunctional (meth) acrylate, and a photopolymerization initiator, wherein the resin composition is water-soluble or water-dispersible. (A) 25 to 45 parts by weight of a low Tg copolymer having a Tg of 5 ° C. or more and less than 25 ° C. and (B) a high Tg copolymer having a Tg of 25 to 45 ° C. Negative cationic property, comprising 55 parts by weight to 75 parts by weight of the polymer, and having a Tg temperature difference of 5 ° C. to 30 ° C. between the low Tg copolymer (A) and the high Tg copolymer (B) Resin composition for electrodeposition photoresist. [Selection figure] None

Description

本発明は、ネガ型カチオン性電着フォトレジスト用樹脂組成物、その製造方法及びそれを電着塗装してなる塗膜に関する。   The present invention relates to a resin composition for a negative cationic electrodeposition photoresist, a production method thereof, and a coating film obtained by electrodeposition coating thereof.

従来、プリント配線板におけるスルーホールのような三次元形状を有する電子回路基板において、アニオン性又はカチオン性の電着特性を有するネガ型やポジ型の電着フォトレジストが、微細加工用途、エッチング用途及びめっきマスク用途等に用いられてきている(特許文献1〜7)。
電着フォトレジストのタイプは使用する用途により使い分けられているが、電子回路基板のさらなる微細化に伴い、高感度であって、しかも耐薬品性をさらに高めた電着フォトレジストが要望されており、これまで種々の検討がなされてきている。
特定の粘性挙動を有するネガ型電着フォトレジストは、エッジ部の露出が少ないため良好なレジスト特性を有するが、感度の面では不十分であり、その性能を確保するためには塗膜厚を厚くする対策が必要であるが、ポリマーのTgが高いため塗膜の析出性が悪く、ピンホールが発生しやすいなど作業性に課題があった。
Conventionally, in an electronic circuit board having a three-dimensional shape such as a through-hole in a printed wiring board, negative or positive electrodeposition photoresists having anionic or cationic electrodeposition characteristics are used for microfabrication applications and etching applications. In addition, it has been used for plating mask applications (Patent Documents 1 to 7).
The types of electrodeposited photoresists are selected according to the intended use. However, as electronic circuit boards are further miniaturized, there is a demand for electrodeposited photoresists with higher sensitivity and higher chemical resistance. Various studies have been made so far.
Negative electrodeposition photoresists with specific viscous behavior have good resist characteristics due to low exposure of the edges, but are insufficient in terms of sensitivity. Although measures to increase the thickness are necessary, there is a problem in workability such that the Tg of the polymer is high and thus the coating film has poor precipitation and pinholes are likely to occur.

例えば、アクリル樹脂に置換基としてフッ素を有する共重合体を共重合したものを用いたネガ型電着フォトレジストは、塗膜の不粘着性に優れており、そのため、露光時でのフォトマスクの貼り付きがなく、さらに耐薬品性にも優れている。
しかしながら、市場からの生産性向上の要望により、薄膜かつ低露光量で所定の感光特性が得られることが近年増々必要となってきているが、生産処理速度を上げた際に硬化不足が生じることがあり、レジスト膜としての特性の一層の向上が求められている。
以上のように、薄膜でありながら、かつ低露光量照射であっても、耐薬品性等のレジスト特性が良好な電着フォトレジスト組成物はこれまで提供されていなかった。
For example, a negative electrodeposition photoresist using a copolymer of an acrylic resin and a copolymer having fluorine as a substituent is excellent in non-adhesiveness of the coating film. No sticking and excellent chemical resistance.
However, due to demands for improving productivity from the market, it has become increasingly necessary in recent years to obtain a predetermined photosensitive characteristic with a thin film and a low exposure amount. However, when the production processing speed is increased, insufficient curing occurs. Therefore, further improvement in characteristics as a resist film is required.
As described above, an electrodeposition photoresist composition having good resist properties such as chemical resistance has not been provided so far, even though it is a thin film and is exposed to a low exposure dose.

特開昭61−080240号公報JP-A-61-080240 特開昭61−247090号公報JP 61-247090 A 特開平1−191799号公報Japanese Patent Laid-Open No. 1-191799 特開平1−279251号公報JP-A-1-279251 特開平4−116181号公報JP-A-4-116181 特開2003−330188号公報JP 2003-330188 A 特開2007−248617号公報JP 2007-248617 A

本発明は、前記したような従来技術における問題を解決したものであり、薄膜にて高感度であり、しかも耐薬品性が良好なレジスト膜を形成できるネガ型カチオン性電着フォトレジスト組成物、その製造方法及びそれを電着塗装してなる塗膜に関する。   The present invention solves the problems in the prior art as described above, a negative type cationic electrodeposition photoresist composition capable of forming a resist film having high sensitivity in a thin film and good chemical resistance, The present invention relates to a production method and a coating film obtained by electrodeposition coating the same.

上記問題に対して、鋭意研究の結果、本発明者らは、特定のネガ型カチオン性電着樹脂液により電着塗装を行なうことで、その問題を克服できることを知見し本発明の完成に至った。
具体的には、共重合性単量体の置換基としてアミノアルキル基を有する共重合性ビニル系単量体を含む水分散性ビニル系共重合体、架橋剤として多官能(メタ)アクリレート及び光重合開始剤を含むことを特徴とするネガ型カチオン性電着フォトレジスト用樹脂組成物から製造したそれぞれTg温度に差異のある水分散性ビニル系共重合体を有する2種のネガ型カチオン性電着樹脂液を併用して用いて電着塗装を行なうことで上記課題を解決できることを見出した。
As a result of earnest research on the above problem, the present inventors have found that the problem can be overcome by performing electrodeposition coating with a specific negative cationic electrodeposition resin solution, and the present invention has been completed. It was.
Specifically, a water-dispersible vinyl copolymer containing a copolymerizable vinyl monomer having an aminoalkyl group as a substituent of the copolymerizable monomer, a polyfunctional (meth) acrylate as a crosslinking agent, and light Two types of negative cationic electrocatalysts having a water-dispersible vinyl copolymer each having a different Tg temperature and produced from a resin composition for negative cationic electrodeposition photoresists, comprising a polymerization initiator It has been found that the above-mentioned problems can be solved by performing electrodeposition coating using a resin resin solution in combination.

すなわち、本発明は、
(1)水溶性又は水分散性ビニル系共重合体、多官能(メタ)アクリレート及び光重合開始剤を含むネガ型カチオン性電着フォトレジスト用樹脂組成物であって、
水溶性又は水分散性ビニル系共重合体として、(A)Tgが5℃以上25℃未満である低Tg共重合体25重量部〜45重量部及び(B)Tgが25℃以上45℃未満の高Tg共重合体55重量部〜75重量部を含み、低Tg共重合体(A)と高Tg共重合体(B)とのTg温度差が5℃〜30℃であることを特徴とするネガ型カチオン性電着フォトレジスト用樹脂組成物、
That is, the present invention
(1) A negative cationic electrodeposition photoresist resin composition comprising a water-soluble or water-dispersible vinyl copolymer, a polyfunctional (meth) acrylate, and a photopolymerization initiator,
As a water-soluble or water-dispersible vinyl copolymer, (A) 25 to 45 parts by weight of a low Tg copolymer having a Tg of 5 ° C. or more and less than 25 ° C. and (B) Tg of 25 to 45 ° C. The Tg temperature difference between the low Tg copolymer (A) and the high Tg copolymer (B) is 5 ° C. to 30 ° C. A negative-type cationic electrodeposition photoresist resin composition,

(2)前記のネガ型カチオン性電着フォトレジスト用樹脂組成物の製造方法であって、
(A)以下の(a)及び(b)成分からなるポリマーのTgが5℃以上25℃未満である水溶性又は水分散性ビニル系共重合体 50〜95重量部、
(a)アミノアルキル置換基を有する共重合性ビニル系単量体 3〜16重量部、
(b)上記以外の共重合性ビニル系単量体 84〜97重量部、
(C)1分子中にビニル基を3個以上有する多官能(メタ)アクリレート 5〜50重量部、
(D)光重合開始剤 (A)と(C)の合計100重量部に対し1〜12重量部、
を含有する(E)低Tgネガ型カチオン性電着フォトレジスト用樹脂組成物を製造する工程、
(B)以下の(a)及び(b)成分からなるポリマーのTgが25℃以上45℃未満である水溶性又は水分散性ビニル系共重合体 50〜95重量部、
(a)アミノアルキル置換基を有する共重合性ビニル系単量体 3〜16重量部、
(b)上記以外の共重合性ビニル系単量体 84〜97重量部、
(C)1分子中にビニル基を3個以上有する多官能(メタ)アクリレート 5〜50重量部、
(2) A method for producing the negative cationic electrodeposition photoresist resin composition,
(A) 50 to 95 parts by weight of a water-soluble or water-dispersible vinyl copolymer in which the Tg of the polymer comprising the following components (a) and (b) is 5 ° C. or higher and lower than 25 ° C.
(A) 3-16 parts by weight of a copolymerizable vinyl monomer having an aminoalkyl substituent,
(B) 84 to 97 parts by weight of a copolymerizable vinyl monomer other than the above,
(C) 5 to 50 parts by weight of a polyfunctional (meth) acrylate having 3 or more vinyl groups in one molecule,
(D) 1 to 12 parts by weight with respect to a total of 100 parts by weight of the photopolymerization initiator (A) and (C),
(E) a step of producing a resin composition for low Tg negative-type cationic electrodeposition photoresist, comprising:
(B) 50 to 95 parts by weight of a water-soluble or water-dispersible vinyl copolymer having a Tg of 25 ° C. or more and less than 45 ° C., comprising a polymer comprising the following components (a) and (b):
(A) 3-16 parts by weight of a copolymerizable vinyl monomer having an aminoalkyl substituent,
(B) 84 to 97 parts by weight of a copolymerizable vinyl monomer other than the above,
(C) 5 to 50 parts by weight of a polyfunctional (meth) acrylate having 3 or more vinyl groups in one molecule,

(D)光重合開始剤 (B)と(C)の合計100重量部に対し1〜12重量部、
を含有する(F)高Tgネガ型カチオン性電着フォトレジスト用樹脂組成物を製造する工程、
(E)から製造した電着塗料25重量部〜45重量部と(F)から製造した電着塗料55重量部〜75重量部を混合する工程、及び該混合工程において、(E)組成物中の(A)成分と(F)組成物中の(B)成分のTg温度差が5℃〜30℃となるように選択する工程を含むことを特徴とするネガ型カチオン性電着フォトレジスト用樹脂組成物の製造方法、
(3)前記のネガ型カチオン性電着フォトレジスト用樹脂組成物を電着塗装して形成されることを特徴とする電着フォトレジスト塗膜、を要旨とするものである。
(D) 1 to 12 parts by weight with respect to a total of 100 parts by weight of the photopolymerization initiator (B) and (C),
(F) a step of producing a resin composition for high-Tg negative-type cationic electrodeposition photoresist, comprising:
In the step of mixing 25 parts by weight to 45 parts by weight of the electrodeposition paint produced from (E) and 55 parts by weight to 75 parts by weight of the electrodeposition paint produced from (F), and in the mixing step, (E) in the composition For negative-type cationic electrodeposition photoresists, comprising a step of selecting a Tg temperature difference between component (A) of component (F) and component (B) in the composition to be 5 ° C. to 30 ° C. Production method of resin composition,
(3) An electrodeposition photoresist coating film characterized by being formed by electrodeposition coating of the above-described negative cationic electrodeposition photoresist resin composition.

本発明のネガ型カチオン性電着フォトレジスト用樹脂組成物は、塗料安定性に優れ、これを用いて構成した電着塗料並びにこれにより形成されたネガ型カチオン性電着フォトレジスト塗膜は、膜つき性良好、ピンホールレス、且つ、高感度で優れた耐薬品性を有しており、産業上極めて有用である。   The resin composition for a negative cationic electrodeposition photoresist of the present invention is excellent in paint stability, an electrodeposition paint formed using the same, and a negative type cationic electrodeposition photoresist coating film formed thereby, It has excellent film adhesion, pinholeless, high sensitivity and excellent chemical resistance, and is extremely useful in industry.

本発明について更に詳しく説明する。
本発明においては、(A)Tgが5以上25℃未満である水溶性または水分散性ビニル系共重合体、(B)Tgが25℃以上45℃未満である水溶性または水分散性ビニル系共重合体、(C)1分子中にビニル基を3個以上有する多官能(メタ)アクリレート及び(D)光重合開始剤の各成分は、電着塗膜および電着塗料用樹脂液を得るための必須構成成分である。
(A)成分及び(B)成分の水溶性または水分散性ビニル系共重合体を構成するビニル系単量体のうち、(a)置換基としてアミノアルキル基を含有する単量体としては、炭素数1〜4のジアルキル基を有する炭素数1〜3のアミノアルキル基を有するアクリル系単量体を好適に用いることができる。
The present invention will be described in more detail.
In the present invention, (A) a water-soluble or water-dispersible vinyl copolymer having a Tg of 5 to 25 ° C., and (B) a water-soluble or water-dispersible vinyl type having a Tg of 25 to 45 ° C. Each component of the copolymer, (C) a polyfunctional (meth) acrylate having 3 or more vinyl groups in one molecule, and (D) a photopolymerization initiator provides an electrodeposition coating film and a resin liquid for electrodeposition coatings. Is an essential component.
Among the vinyl monomers constituting the water-soluble or water-dispersible vinyl copolymer of the component (A) and the component (B), as the monomer (a) containing an aminoalkyl group as a substituent, An acrylic monomer having a C1-C3 aminoalkyl group having a C1-C4 dialkyl group can be suitably used.

具体的には、アクリル酸ジメチルアミノメチル、アクリル酸ジエチルアミノメチル、アクリル酸ジプロピルアミノメチル、アクリル酸ジイソプロピルアミノメチル、アクリル酸ジブチルアミノメチル、アクリル酸ジメチルアミノエチル、アクリル酸ジエチルアミノエチル、アクリル酸ジプロピルアミノエチル、アクリル酸ジイソプロピルアミノエチル、アクリル酸ジブチルアミノエチル、アクリル酸ジメチルアミノプロピル、アクリル酸ジエチルアミノプロピル、アクリル酸ジプロピルアミノプロピル、アクリル酸ジイソプロピルアミノプロピル、アクリル酸ジブチルアミノプロピル、メタクリル酸ジメチルアミノメチル、メタクリル酸ジエチルアミノメチル、メタクリル酸ジプロピルアミノメチル、メタクリル酸ジイソプロピルアミノメチル、メタクリル酸ジブチルアミノメチル、メタクリル酸ジメチルアミノエチル、メタクリル酸ジエチルアミノエチル、メタクリル酸ジプロピルアミノエチル、メタクリル酸ジイソプロピルアミノエチル、メタクリル酸ジブチルアミノエチル、メタクリル酸ジメチルアミノプロピル、メタクリル酸ジエチルアミノプロピル、メタクリル酸ジプロピルアミノプロピル、メタクリル酸ジイソプロピルアミノプロピル、メタクリル酸ジブチルアミノプロピル等がある。
なかでもアクリル酸ジメチルアミノエチル、アクリル酸ジエチルアミノエチル、メタクリル酸ジメチルアミノエチル、メタクリル酸ジエチルアミノエチルが好適に使用できる。
Specifically, dimethylaminomethyl acrylate, diethylaminomethyl acrylate, dipropylaminomethyl acrylate, diisopropylaminomethyl acrylate, dibutylaminomethyl acrylate, dimethylaminoethyl acrylate, diethylaminoethyl acrylate, dipropyl acrylate Aminoethyl, diisopropylaminoethyl acrylate, dibutylaminoethyl acrylate, dimethylaminopropyl acrylate, diethylaminopropyl acrylate, dipropylaminopropyl acrylate, diisopropylaminopropyl acrylate, dibutylaminopropyl acrylate, dimethylaminomethyl methacrylate , Diethylaminomethyl methacrylate, dipropylaminomethyl methacrylate, diisopropylaminomethyl methacrylate , Dibutylaminomethyl methacrylate, dimethylaminoethyl methacrylate, diethylaminoethyl methacrylate, dipropylaminoethyl methacrylate, diisopropylaminoethyl methacrylate, dibutylaminoethyl methacrylate, dimethylaminopropyl methacrylate, diethylaminopropyl methacrylate, methacrylic acid Examples include dipropylaminopropyl, diisopropylaminopropyl methacrylate, dibutylaminopropyl methacrylate and the like.
Of these, dimethylaminoethyl acrylate, diethylaminoethyl acrylate, dimethylaminoethyl methacrylate, and diethylaminoethyl methacrylate can be suitably used.

(A)成分及び(B)成分の水溶性又は水分散性ビニル系共重合体を構成するビニル系単量体のうち(b)(a)以外の共重合性ビニル系単量体としては、メチルアクリレート、メチルメタクリレート、エチルアクリレート、エチルメタクリレート、n−プロピルアクリレート、n−プロピルメタクリレート、イソプロピルアクリレート、イソプロピルメタクリレート、ノルマルブチルアクリレート、ノルマルブチルメタクリレート、ノルマルヘキシルアクリレート、ノルマルヘキシルメタクリレート、ノルマルヘプチルアクリレート、ノルマルヘプチルメタクリレート、2−エチルヘキシルアクリレート、2−エチルヘキシルメタクリレート、ノルマルラウリルアクリレート、ラウリルメタクリレート、ステアリルアクリレート、ステアリルメタクリレート等の炭素数約20までのアルキル基を有する同様な共重合性ビニルエステルやシクロヘキシルアクリレート、シクロヘキシルメタクリレート、イソボルニルアクリレート、イソボルニルメタクリレートなどの置換基として脂環式炭化水素基を有する共重合性ビニルエステル系単量体、及び、スチレン、α−メチルスチレン、α−クロロスチレン、ビニルトルエン等の芳香族基を有するビニル系単量体が使用できる。 Among the vinyl monomers constituting the water-soluble or water-dispersible vinyl copolymer of the component (A) and the component (B), as the copolymerizable vinyl monomer other than (b) and (a), Methyl acrylate, methyl methacrylate, ethyl acrylate, ethyl methacrylate, n-propyl acrylate, n-propyl methacrylate, isopropyl acrylate, isopropyl methacrylate, normal butyl acrylate, normal butyl methacrylate, normal hexyl acrylate, normal hexyl methacrylate, normal heptyl acrylate, normal heptyl Methacrylate, 2-ethylhexyl acrylate, 2-ethylhexyl methacrylate, normal lauryl acrylate, lauryl methacrylate, stearyl acrylate, stearyl Copolymers having an alicyclic hydrocarbon group as a substituent such as methacrylates and similar copolymerizable vinyl esters having an alkyl group of up to about 20 carbon atoms, cyclohexyl acrylate, cyclohexyl methacrylate, isobornyl acrylate, isobornyl methacrylate, etc. A polymerizable vinyl ester monomer and a vinyl monomer having an aromatic group such as styrene, α-methylstyrene, α-chlorostyrene, vinyltoluene and the like can be used.

また、2−ヒドロキシエチルアクリレート、2−ヒドロキシエチルメタクリレート、2−ヒドロキシプロピルアクリレート、2−ヒドロキシプロピルメタクリレート、3−ヒドロキシプロピルアクリレート、3−ヒドロキシプロピルメタクリレート、4−ヒドロキシブチルアクリレート、4−ヒドロキシブチルメタクリレート、ジエチレングリコールモノアクリレート、シクロヘキサンジメタノールモノアクリレート、シクロヘキサンジメタノールモノメタクリレート等の置換基として水酸基を有するものが使用できる。   Also, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, 3-hydroxypropyl acrylate, 3-hydroxypropyl methacrylate, 4-hydroxybutyl acrylate, 4-hydroxybutyl methacrylate, Those having a hydroxyl group as a substituent such as diethylene glycol monoacrylate, cyclohexanedimethanol monoacrylate, cyclohexanedimethanol monomethacrylate and the like can be used.

さらに、アクリルアミド、N−メチロールアクリルアミド、N−メトキシメチルアクリルアミド、N−エトキシメチルアクリルアミド、N−イソブトキシメチルアクリルアミド、N−ブトキシメチルアクリルアミド、メタクリルアミド、N−メチロールメタクリルアミド、N−メトキシメチルメタクリルアミド、N−エトキシメチルメタクリルアミド、N−イソブトキシメチルメタクリルアミド、N−ブトキシメチルメタクリルアミド等の(メタ)アクリルアミド類やアクリロニトリル、酢酸ビニル等を使用することも出来る。   Furthermore, acrylamide, N-methylol acrylamide, N-methoxymethyl acrylamide, N-ethoxymethyl acrylamide, N-isobutoxymethyl acrylamide, N-butoxymethyl acrylamide, methacrylamide, N-methylol methacrylamide, N-methoxymethyl methacrylamide, (Meth) acrylamides such as N-ethoxymethyl methacrylamide, N-isobutoxymethyl methacrylamide, N-butoxymethyl methacrylamide, acrylonitrile, vinyl acetate and the like can also be used.

(C)1分子中にビニル基を3個以上有する多官能(メタ)アクリレート化合物としては、トリメチロールプロパントリアクリレート、ペンタエリスリトールトリアクリレート、ペンタエリスリトールトリアクリレート、ペンタエリスリトールテトラアクリレート、ジトリメチロールプロパンテトラアクリレート、ジペンタエリスリトールペンタアクリレート、ジペンタエリスリトールヘキサアクリレート等のポリオール誘導体の多官能(メタ)アクリレート類、ペンタエリスリトールトリアリレート、ペンタエリスリトールテトラアリレート、トリメチロールプロパントリアリレート等の多官能アリレート類、ポリエステル(メタ)アクリレート類、市販品としてはアロニックスM−7100、アロニックスM−8030、アロニックスM−8060(いずれも東亞合成(株)製)、EO変性多官能アクリレート、PO変性多官能アクリレートなどのポリエーテル(メタ)アクリレート類、市販品としてはPETIA、PETRA、TMPTA、TMPEOTA、OTA480、EBECRYL12、EBECRYL40、EBECRYL140、DPHA(いずれもダイセル・サイテック(株)製)、アロニックスM−305、アロニックスM−309、アロニックスM−310、M−315、M−320、アロニックスM−350、アロニックスM−360、アロニックスM−370、アロニックスM−400、アロニックスM−402、アロニックスM−408、アロニックスM−450、(いずれも東亞合成(株)製)、ネオマーTA−401、TA−505、EA−301、DA−600(いずれも三洋化成工業(株)製)、NKエステルA−TMPT、NKエステルAD−TMP、NKエステルA−TMPT−3EO、NKエステルA−TMPT−9EO、NKエステルA−TM−4E、NKエステルA−TM−4P、NKエステルTMPT−9EO、NKエステルA−DPH、NKエステルA−TMMT、NKエステルA−9550、NKエステルATM−35E、NKエステルTMPT(いずれも新中村化学工業(株)製)、ウレタンアクリレート、デンドリティックアクリレート等が用いることが出来るがこれらに限定されない。なかでもポリオール誘導体の多官能(メタ)アクリレート類、ポリエーテル(メタ)アクリレート類が好適に使用できる。また、上記の一分子中に3個以上の不飽和基を有する化合物は、1種単独又は2種以上を組み合わせて使用することができる。 (C) The polyfunctional (meth) acrylate compound having 3 or more vinyl groups in one molecule includes trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, ditrimethylolpropane tetraacrylate. Polyfunctional (meth) acrylates of polyol derivatives such as dipentaerythritol pentaacrylate and dipentaerythritol hexaacrylate, polyfunctional arylates such as pentaerythritol triarylate, pentaerythritol tetraarylate and trimethylolpropane triarylate, polyester (meta ) Acrylics, commercially available products are Aronix M-7100, Aronix M-8030, Aronix M 8060 (all manufactured by Toagosei Co., Ltd.), polyether (meth) acrylates such as EO-modified polyfunctional acrylate and PO-modified polyfunctional acrylate, and commercially available products include PETIA, PETRA, TMPTA, TMPEOTA, OTA480, EBECRYL12, EBECRYL40 , EBECRYL140, DPHA (all manufactured by Daicel-Cytec), Aronix M-305, Aronix M-309, Aronix M-310, M-315, M-320, Aronix M-350, Aronix M-360, Aronix M-370, Aronix M-400, Aronix M-402, Aronix M-408, Aronix M-450 (all manufactured by Toagosei Co., Ltd.), Neomer TA-401, TA-505, EA-3 1, DA-600 (all manufactured by Sanyo Chemical Industries, Ltd.), NK ester A-TMPT, NK ester AD-TMP, NK ester A-TMPT-3EO, NK ester A-TMPT-9EO, NK ester A-TM -4E, NK ester A-TM-4P, NK ester TMPT-9EO, NK ester A-DPH, NK ester A-TMMT, NK ester A-9550, NK ester ATM-35E, NK ester TMPT (all Shin-Nakamura Chemical Kogyo Co., Ltd.), urethane acrylate, dendritic acrylate and the like can be used, but are not limited thereto. Of these, polyfunctional (meth) acrylates and polyether (meth) acrylates of polyol derivatives can be preferably used. Moreover, the compound which has 3 or more unsaturated groups in said 1 molecule can be used individually by 1 type or in combination of 2 or more types.

(D)光重合開始剤としては、電着フォトレジストの特性上、非水溶性のものが好ましい。例示すると、2−メチル−1−[4−(メチルチオ)フェニル]−2−(4−モルフォリニル)−1−プロパノン、2−(4−メチル)ベンジル−2−(ジメチルアミノ)−1−[4−(4−モルフォリニル)フェニル]−1−ブタノン、2−ベンジル−2−(ジメチルアミノ)−1−[4−(4−モルフォリニル)フェニル]−1−ブタノンなどのα−アミノケトン類、2−ヒドロキシ−1−{4−[4−(2−ヒドロキシ−2−メチルプロピオニル)−ベンジル]フェニル}−2−メチルプロパン−1−オン、オリゴ 2−ヒドロキシ−2−メチル−1−[4−(1−メチルビニル)フェニル]プロパノン(商品名:EsacureKIP150、EsacureONE等Lamberti社製)等の分子量300以上のα−ヒドロキシケトン類、2,4−ジエチルチオキサントン、2,4−ジイソプロピルチオキサントン、高分子チオキサントン(商品名:GENOPOL TX、RAHN社製)等のチオキサントン類、1−[4−(4−ベンゾイルフェニルスルファニル)フェニル]−2−メチル−2−[(4−メチルフェニル)スルフォニル]プロパン−1−オン等のケトスルフォン類が使用できる。なかでも、α−アミノケトン類、チオキサントン類、ケトスルフォン類が好ましい。
上記の光重合開始剤においては、1種、または、2種以上組み合わせて使用することができる。また、アミン等の光増感剤を併用することもできる。
As the photopolymerization initiator (D), a water-insoluble one is preferable in view of the characteristics of the electrodeposited photoresist. For example, 2-methyl-1- [4- (methylthio) phenyl] -2- (4-morpholinyl) -1-propanone, 2- (4-methyl) benzyl-2- (dimethylamino) -1- [4 Α-aminoketones such as-(4-morpholinyl) phenyl] -1-butanone and 2-benzyl-2- (dimethylamino) -1- [4- (4-morpholinyl) phenyl] -1-butanone, 2-hydroxy -1- {4- [4- (2-hydroxy-2-methylpropionyl) -benzyl] phenyl} -2-methylpropan-1-one, oligo 2-hydroxy-2-methyl-1- [4- (1 -Methylvinyl) phenyl] propanone (trade name: Esacure KIP150, Esacure ONE, etc., manufactured by Lamberti) and the like. Thioxanthones such as amines, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone, polymer thioxanthone (trade name: GENOPOL TX, manufactured by RAHN), 1- [4- (4-benzoylphenylsulfanyl) phenyl] Ketosulfones such as -2-methyl-2-[(4-methylphenyl) sulfonyl] propan-1-one can be used. Of these, α-aminoketones, thioxanthones, and ketosulfones are preferable.
In said photoinitiator, it can be used 1 type or in combination of 2 or more types. Moreover, photosensitizers, such as amine, can also be used together.

本発明における(A)成分及び(B)成分の水溶性または水分散性ビニル系共重合体のアミノアルキル基を中和するのに用いることのできる酸成分としては、ギ酸、酢酸、プロピオン酸、乳酸、酪酸、2−エチルブタン酸、オクチル酸などの有機酸、又は硫酸、リン酸等が挙げられる。中でも酢酸、乳酸等が好適に使用できる。酸成分は、(A)成分、及び(B)成分中のアミノアルキル基に対して、モル比が0.3〜0.9となるように添加すればよい。
また、本発明においては、必要に応じ、重合禁止剤、顔料、染料、界面活性剤、増粘剤、添加剤等を特性に悪影響しない範囲で使用することができる。
Examples of the acid component that can be used to neutralize the aminoalkyl group of the water-soluble or water-dispersible vinyl copolymer of the components (A) and (B) in the present invention include formic acid, acetic acid, propionic acid, Examples thereof include organic acids such as lactic acid, butyric acid, 2-ethylbutanoic acid and octylic acid, or sulfuric acid and phosphoric acid. Of these, acetic acid, lactic acid and the like can be preferably used. What is necessary is just to add an acid component so that molar ratio may be set to 0.3-0.9 with respect to the aminoalkyl group in (A) component and (B) component.
Moreover, in this invention, a polymerization inhibitor, a pigment, dye, surfactant, a thickener, an additive, etc. can be used in the range which does not have a bad influence on a characteristic as needed.

本発明の低Tgネガ型電着フォトレジスト用樹脂組成物(E)において、各成分の配合割合は、上記成分水溶性又は水分散性ビニル系共重合体(A)50〜95重量部、1分子中にビニル基を3個以上有する多官能(メタ)アクリレート(C)5〜50重量部、(A)と(C)の合計100重量部に対し、光重合開始剤(D)1〜12重量部であることが必要である。さらに(A)は(a)アミノアルキル基を側鎖に有する共重合性ビニル系単量体を3〜16重量部、(b)アミノアルキル基を側鎖に有しない共重合性ビニル系単量体を、84〜97重量部を含み、Tgは、5℃以上25℃未満になることが必要である。   In the resin composition for low Tg negative electrodeposition photoresist (E) of the present invention, the blending ratio of each component is 50 to 95 parts by weight of the above component water-soluble or water-dispersible vinyl copolymer (A), 1 Photopolymerization initiator (D) 1 to 12 with respect to 5 to 50 parts by weight of polyfunctional (meth) acrylate (C) having 3 or more vinyl groups in the molecule and 100 parts by weight of (A) and (C) in total. It must be part by weight. Furthermore, (A) is (a) 3 to 16 parts by weight of a copolymerizable vinyl monomer having an aminoalkyl group in the side chain, and (b) a copolymerizable vinyl monomer having no aminoalkyl group in the side chain. The body contains 84 to 97 parts by weight, and Tg needs to be 5 ° C. or higher and lower than 25 ° C.

特に好ましい配合割合は、成分(A)65〜85重量部、成分(C)15〜35重量部、(A)と(C)の合計100重量部に対し、成分(D)3〜10重量部の範囲である。この時、(A)は(a)アミノアルキル基を側鎖に有する共重合性ビニル系単量体を5〜13重量部、(b)アミノアルキル基を側鎖に有しない共重合性ビニル系単量体を、87〜95重量部を含み、Tgは、10℃〜22℃となることが好ましい。   A particularly preferred blending ratio is 65 to 85 parts by weight of component (A), 15 to 35 parts by weight of component (C), and 3 to 10 parts by weight of component (D) with respect to a total of 100 parts by weight of (A) and (C). Range. At this time, (A) is (a) 5 to 13 parts by weight of a copolymerizable vinyl monomer having an aminoalkyl group in the side chain, and (b) a copolymerizable vinyl type having no aminoalkyl group in the side chain. The monomer is preferably contained in an amount of 87 to 95 parts by weight, and Tg is preferably 10 ° C to 22 ° C.

高Tgネガ型電着フォトレジスト用樹脂組成物(F)において、各成分の配合割合は、上記成分水溶性、または、水分散性ビニル系共重合体(B)50〜95重量部、1分子中にビニル基を3個以上有する多官能(メタ)アクリレート(C)5〜50重量部、(B)と(C)の合計100重量部に対し、光重合開始剤(D)1〜12重量部であることが必要である。さらに(B)は(a)アミノアルキル基を側鎖に有する共重合性ビニル系単量体を3〜16重量部、(b)アミノアルキル基を側鎖に有しない共重合性ビニル系単量体を、84〜97重量部を含み、Tgは、25℃以上45℃未満になることが必要である。   In the high Tg negative electrodeposition photoresist resin composition (F), the blending ratio of each component is 50 to 95 parts by weight of the above component water-soluble or water-dispersible vinyl copolymer (B), one molecule. 5 to 50 parts by weight of polyfunctional (meth) acrylate (C) having 3 or more vinyl groups therein, and 1 to 12 weights of photopolymerization initiator (D) with respect to 100 parts by weight of (B) and (C) in total. It is necessary to be a part. Further, (B) is (a) 3 to 16 parts by weight of a copolymerizable vinyl monomer having an aminoalkyl group in the side chain, and (b) a copolymerizable vinyl monomer having no aminoalkyl group in the side chain. The body contains 84 to 97 parts by weight, and Tg needs to be 25 ° C. or higher and lower than 45 ° C.

特に好ましい配合割合は、成分(B)65〜85重量部、成分(C)15〜35重量部、BとCの合計100重量部に対し、成分(D)3〜10重量部の範囲である。この時、(B)は(a)アミノアルキル基を側鎖に有する共重合性ビニル系単量体を5〜13重量部、(b)アミノアルキル基を側鎖に有しない共重合性ビニル系単量体を、87〜95重量部を含み、Tgは、30℃〜42℃となることが好ましい。   A particularly preferred blending ratio is in the range of 3 to 10 parts by weight of component (D) with respect to 65 to 85 parts by weight of component (B), 15 to 35 parts by weight of component (C), and 100 parts by weight of B and C in total. . At this time, (B) is (a) 5 to 13 parts by weight of a copolymerizable vinyl monomer having an aminoalkyl group in the side chain, and (b) a copolymerizable vinyl type having no aminoalkyl group in the side chain. The monomer is preferably contained in an amount of 87 to 95 parts by weight, and Tg is preferably 30 ° C to 42 ° C.

これに対して、(A)及び(B)が50重量部未満の場合、電着液の水溶性が低下し電着液の安定性が低下することがある。また、95重量部を超えると塗膜の露光感度が落ちることがある。
さらに、(A)及び(B)を構成する(a)が3重量部未満の場合、電着塗膜の水溶性が落ち、現像性が落ちることがあり、また、16重量部を超えると、電着塗膜の耐水性が落ち、耐めっき液性が悪くなることがある。
(C)が、5重量部未満では架橋密度が低くなり、現像時に塗膜が溶解することがある。
また、50重量部を超えると塗膜に粘着性が出てくるといった問題が生じることがある。
(D)が1重量部未満の時、塗膜の露光感度が落ちることがある。但し、12重量部を超
えても露光感度は向上しない。
On the other hand, when (A) and (B) are less than 50 parts by weight, the water-solubility of the electrodeposition solution may be lowered, and the stability of the electrodeposition solution may be lowered. On the other hand, if it exceeds 95 parts by weight, the exposure sensitivity of the coating film may decrease.
Furthermore, when (a) constituting (A) and (B) is less than 3 parts by weight, the water-solubility of the electrodeposition coating film may be lowered, and developability may be lowered. The water resistance of the electrodeposition coating film may decrease, and the plating solution resistance may deteriorate.
When (C) is less than 5 parts by weight, the crosslinking density is low, and the coating film may be dissolved during development.
Moreover, when it exceeds 50 weight part, the problem that adhesiveness comes out to a coating film may arise.
When (D) is less than 1 part by weight, the exposure sensitivity of the coating film may decrease. However, even if it exceeds 12 parts by weight, the exposure sensitivity is not improved.

本発明の低Tgネガ型電着フォトレジスト用樹脂組成物(E)と高Tgネガ型電着フォトレジスト用樹脂組成物(F)の使用比率は、低Tgネガ型電着フォトレジスト用樹脂組成物(E)25から45重量部、高Tgネガ型電着フォトレジスト用樹脂組成物(F)55重量部から75重量部で、(E)中の(A)成分と(F)中の(B)成分のTgの差異が5〜30℃であることが必要である。
特に好ましい配合割合は、(E)成分が30〜42重量部、(F)成分が58〜70重量部の使用比率で、且つ、(E)中の(A)成分と(F)中の(B)成分のTgの差異が8℃〜22℃であることが好ましい。
The ratio of the low Tg negative electrodeposition photoresist resin composition (E) and the high Tg negative electrodeposition photoresist resin composition (F) of the present invention is low Tg negative electrodeposition photoresist resin composition. (E) 25 to 45 parts by weight, high Tg negative electrodeposition photoresist resin composition (F) 55 to 75 parts by weight, (E) component (A) and (F) ( The difference in Tg of component B) needs to be 5 to 30 ° C.
A particularly preferred blending ratio is that the component (E) is 30 to 42 parts by weight, the component (F) is 58 to 70 parts by weight, and the component (A) in (E) and the component (F) ( It is preferable that the difference of Tg of B) component is 8 to 22 degreeC.

(E)成分の比率が25重量部未満、(F)成分の比率が75重量部以上であると、膜つき性が悪く、レべリング性が悪いため塗膜にピンホール等の欠陥が生じる。(E)成分の比率が45重量部を超え、(F)成分の比率が55重量部未満になると、塗膜のタック性が低下したり、エッジカバーリングが低下し、耐めっき液性が悪くなる。(E)成分と(F)成分のTg差が5℃未満であると本発明の効果として期待される、膜つき性、ピンホール性、耐めっき液性に対し、改善効果が認められず、(E)成分と(F)成分のTg差が30℃を超えると、(E)成分が優先的に電着析出してしまうため、タック性、エッジカバーリング性の低下により耐めっき液性が悪くなったり、異常電着が起こりやすくなる。   When the ratio of the component (E) is less than 25 parts by weight and the ratio of the component (F) is 75 parts by weight or more, the film adhesion is poor and the leveling property is poor, so that defects such as pinholes occur in the coating film. . When the ratio of the component (E) exceeds 45 parts by weight and the ratio of the component (F) is less than 55 parts by weight, the tackiness of the coating film decreases, the edge covering decreases, and the plating solution resistance is poor. Become. (E) The Tg difference between the component (F) and the component (F) is less than 5 ° C. The effect of the present invention is expected as an effect of the present invention. When the Tg difference between the (E) component and the (F) component exceeds 30 ° C., the (E) component is preferentially electrodeposited, so that the plating solution resistance is reduced due to a decrease in tackiness and edge covering property. It becomes worse and abnormal electrodeposition tends to occur.

本発明の電着条件としては、通電工程において、被塗物を陰極とし、印加電圧を15〜250V、好ましくは60〜180Vとし、通電時間を5〜180秒、好ましくは10〜60秒とし、浴温を25〜50℃、好ましくは30〜45℃とする。印加電圧は通電と同時に設定電圧をかけるハードスタート、あるいは徐々に設定電圧まで上げていくソフトスタートのいずれでもかまわない。   As the electrodeposition conditions of the present invention, in the energization step, the object to be coated is a cathode, the applied voltage is 15 to 250 V, preferably 60 to 180 V, the energization time is 5 to 180 seconds, preferably 10 to 60 seconds, The bath temperature is 25 to 50 ° C, preferably 30 to 45 ° C. The applied voltage may be either a hard start in which a set voltage is applied simultaneously with energization or a soft start in which the voltage is gradually raised to the set voltage.

塗膜厚は6μm〜12μmで所定の特性が得られ、好ましくは7〜9μmで使用するのが望ましい。
電着塗装された被塗装物は水洗され、次いで乾燥し、塗膜中の水分、溶剤成分を除去した後 紫外線を照射し露光される。紫外線光源としては、高圧水銀ランプ、メタルハライドランプのいずれでもかまわない。露光のための光量は50mJ/cm〜800mJ/cmで、生産性向上の観点から、望ましくは50〜150mJ/cmである。 露光はマスクパターン越しに行い、所定のパターンを塗膜に焼き付ける。また、パターンの解像度を上げるために、マスクパターンは直接塗膜に接触させる方が好ましい。
The coating thickness is 6 μm to 12 μm, and predetermined characteristics are obtained, and it is desirable to use 7 to 9 μm.
The object to be electrodeposited is washed with water, then dried, and after removing moisture and solvent components in the coating film, it is exposed to ultraviolet rays and exposed. As the ultraviolet light source, either a high pressure mercury lamp or a metal halide lamp may be used. Amount for exposure is 50mJ / cm 2 ~800mJ / cm 2 , from the viewpoint of improving productivity, desirably 50~150mJ / cm 2. Exposure is performed through a mask pattern, and a predetermined pattern is baked onto the coating film. In order to increase the resolution of the pattern, the mask pattern is preferably brought into direct contact with the coating film.

露光された塗膜は、有機酸系の現像液により現像し、未露光部分を溶解除去する。この現像液は、ギ酸、酢酸、乳酸等の有機酸を1〜5%程度の水溶液にしたものを室温から50℃の範囲で、好ましくは35〜45℃の範囲で使用する。また、必要であれば、ノニオン性界面活性剤を添加して現像時間を短縮することも出来る。
現像後に、被塗装物をめっき処理 又はエッチング処理を行う。その後、電着塗膜が不要であれば、剥離液で塗膜を剥離除去する。
The exposed coating film is developed with an organic acid developer, and unexposed portions are dissolved and removed. As this developer, an aqueous solution of an organic acid such as formic acid, acetic acid and lactic acid in an aqueous solution of about 1 to 5% is used in the range of room temperature to 50 ° C., preferably in the range of 35 to 45 ° C. If necessary, the development time can be shortened by adding a nonionic surfactant.
After development, the object to be coated is plated or etched. Then, if an electrodeposition coating film is unnecessary, the coating film is peeled and removed with a stripping solution.

本発明が適用できる被塗装物としては、プリント基板、リードフレーム、コネクター端子等の微細加工用途の電子部品のみでなく導電性を有する微細加工用途のものであれば特に限定されることなくめっきレジスト、エッチングレジストとして使用できる。
例えば、透明性と導電性とを同時に付与することができるITO(Indium Tin Oxide)を蒸着したガラス板上でもかまわない。
また、本発明電着液の使用に関して、用途によりこれ以外の電着液とブレンド使用しても構わない。
The coating object to which the present invention can be applied is not particularly limited as long as it is not only an electronic component for micromachining applications such as a printed circuit board, a lead frame, and a connector terminal but also for micromachining applications having conductivity. It can be used as an etching resist.
For example, a glass plate on which ITO (Indium Tin Oxide) capable of imparting transparency and conductivity can be deposited may be used.
Further, regarding the use of the electrodeposition liquid of the present invention, other electrodeposition liquids and blends may be used depending on the application.

本発明について、製造例、実施例および比較例によってさらに具体的に説明するが、本発明はこれらによって何ら限定されるものではない。
なお、製造例、実施例および比較例中の部は、特に断りのない限り重量部を意味する。
The present invention will be described more specifically with reference to production examples, examples, and comparative examples, but the present invention is not limited by these.
In addition, the part in a manufacture example, an Example, and a comparative example means a weight part unless there is particular notice.

(製造例1)
水溶性又は水分散性のビニル系共重合体の製造は、撹拌装置、還流装置及び窒素導入管を備えた3リットル4つ口フラスコに、重量部でイソプロピルアルコール30部を仕込み、80℃に昇温した。別にイソプロピルアルコール10部、ジエチルアミノエチルメタクリレート10部、2−エチルヘキシルアクリレート10部、2−エチルヘキシルメタクリレート12部、エチルアクリレート10部、ブチルアクリレート10部、メチルメタクリレート48部、アゾビスイソブチロニトリル1部の混合液を滴下ロートに仕込み、前記フラスコ内に120分かけて滴下した。滴下終了後、さらに、イソプロピルアルコール3部、アゾビスイソブチロニトリル0.5部を、30分毎に3回添加した後、さらに90℃で180分反応を続けた。得られた共重合体は、アミン価29.5mgKOH/g、Tg20℃の水分散性ビニル共重合体(固形分66.0%)であった。60℃に冷却後、ジペンタエリスリトールペンタ及びヘキサアクリレート(東亜合成(株)製多官能型共重合性ビニル系単量体、アロニックスM−400)25部、2−メチル−1[4−(メチルチオ)フェニル]−2−モノフォリノプロパン−1−オン(チバ・ガイギー(株)製光重合開始剤、イルガキュア907)5部、2,4−ジエチルチオキサントン(日本化薬(株)製光重合開始剤、カヤキュアDETX−S)2部、プロピレングリコールモノメチルエーテル16部、80%乳酸3.0部を加えて十分撹拌した後、脱イオン水1117.5部を加えて固形分10%の電着液を作製した。
(Production Example 1)
The water-soluble or water-dispersible vinyl copolymer was prepared by charging 30 parts by weight of isopropyl alcohol into a 3 liter four-necked flask equipped with a stirrer, a reflux apparatus and a nitrogen introduction tube, and raising the temperature to 80 ° C. Warm up. Separately, 10 parts of isopropyl alcohol, 10 parts of diethylaminoethyl methacrylate, 10 parts of 2-ethylhexyl acrylate, 12 parts of 2-ethylhexyl methacrylate, 10 parts of ethyl acrylate, 10 parts of butyl acrylate, 48 parts of methyl methacrylate, 1 part of azobisisobutyronitrile The mixed solution was charged into a dropping funnel and dropped into the flask over 120 minutes. After completion of the dropwise addition, 3 parts of isopropyl alcohol and 0.5 part of azobisisobutyronitrile were added three times every 30 minutes, and the reaction was continued at 90 ° C. for 180 minutes. The resulting copolymer was a water-dispersible vinyl copolymer (solid content 66.0%) having an amine value of 29.5 mg KOH / g and Tg of 20 ° C. After cooling to 60 ° C., 25 parts of dipentaerythritol penta and hexaacrylate (a polyfunctional type copolymerizable vinyl monomer manufactured by Toa Gosei Co., Ltd., Aronix M-400), 2-methyl-1 [4- (methylthio ) Phenyl] -2-monoforinopropan-1-one (Ciba Geigy Co., Ltd., photopolymerization initiator, Irgacure 907) 5 parts, 2,4-diethylthioxanthone (Nippon Kayaku Co., Ltd. photopolymerization start) Agent, Kayacure DETX-S) 2 parts, 16 parts of propylene glycol monomethyl ether and 3.0 parts of 80% lactic acid, and after sufficient stirring, 1117.5 parts of deionized water were added and the electrodeposition solution having a solid content of 10% Was made.

(製造例2〜製造例8)
ビニル系共重合性単量体の配合比率を変更した以外は、製造例1と同じ方法で作製した。各製造例における配合比率を表1に示す。
(Production Example 2 to Production Example 8)
It was produced by the same method as in Production Example 1 except that the blending ratio of the vinyl copolymerizable monomer was changed. Table 1 shows the blending ratio in each production example.

Figure 0005960899
Figure 0005960899

(実施例1〜9)
(実施例1)
撹拌装置を備えた2Lフラスコに製造例1で作製した低Tgネガ型電着フォトレジスト用樹脂組成物(E)350部と製造例5で作製した高Tgネガ型電着フォトレジスト用樹脂組成物(F)650部を入れ、30分混合し、電着液を作製した。得られた電着液に含まれる水分散性ビニル系共重合体(A)と水分散性ビニル系共重合体(B)のTg差は7℃であった。
(Examples 1-9)
Example 1
350 parts of a low Tg negative electrodeposition photoresist resin composition (E) prepared in Production Example 1 on a 2 L flask equipped with a stirrer and a high Tg negative electrodeposition photoresist resin composition produced in Production Example 5 (F) 650 parts was added and mixed for 30 minutes to prepare an electrodeposition solution. The difference in Tg between the water-dispersible vinyl copolymer (A) and the water-dispersible vinyl copolymer (B) contained in the obtained electrodeposition liquid was 7 ° C.

(実施例2〜9)
低Tgネガ型電着フォトレジスト用樹脂組成物(E)と高Tgネガ型電着フォトレジスト用樹脂組成物(F)の組み合わせを変えた以外は、実施例1と同様な方法で作製した。
(Examples 2-9)
It was produced in the same manner as in Example 1 except that the combination of the low Tg negative electrodeposition photoresist resin composition (E) and the high Tg negative electrodeposition photoresist resin composition (F) was changed.

(比較例1〜5)
(比較例1)
撹拌装置を備えた2Lフラスコに製造例3で作製した低Tgネガ型電着フォトレジスト用樹脂組成物(E)350部と製造例8で作製した高Tgネガ型電着フォトレジスト用樹脂組成物(F)650部を入れ、30分混合し、電着液を作製した。得られた電着液に含
まれる水分散性ビニル系共重合体(A)と水分散性ビニル系共重合体(B)のTg差は32℃であった。
(Comparative Examples 1-5)
(Comparative Example 1)
350 parts of a low Tg negative electrodeposition photoresist resin composition (E) prepared in Production Example 3 on a 2 L flask equipped with a stirrer and a high Tg negative electrodeposition photoresist resin composition prepared in Production Example 8 (F) 650 parts was added and mixed for 30 minutes to prepare an electrodeposition solution. The difference in Tg between the water-dispersible vinyl copolymer (A) and the water-dispersible vinyl copolymer (B) contained in the obtained electrodeposition liquid was 32 ° C.

(比較例2)
低Tgネガ型電着フォトレジスト用樹脂組成物(E)と高Tgネガ型電着フォトレジスト用樹脂組成物(F)の組み合わせを変えた以外は、比較例1と同様な方法で作製した。
(Comparative Example 2)
It was produced in the same manner as in Comparative Example 1 except that the combination of the low Tg negative electrodeposition photoresist resin composition (E) and the high Tg negative electrodeposition photoresist resin composition (F) was changed.

(比較例3)
撹拌装置を備えた2Lフラスコに製造例2で作製した低Tgネガ型電着フォトレジスト用樹脂組成物(E)200部と製造例7で作製した高Tgネガ型電着フォトレジスト用樹脂組成物(F)800部を入れ、30分混合し、電着液を作製した。得られた電着液に含まれる水分散性ビニル系共重合体(A)と水分散性ビニル系共重合体(B)のTg差は20℃であった。
(Comparative Example 3)
200 parts of low Tg negative electrodeposition photoresist resin composition (E) prepared in Production Example 2 on a 2 L flask equipped with a stirrer and high Tg negative electrodeposition photoresist resin composition produced in Production Example 7 (F) 800 parts was added and mixed for 30 minutes to prepare an electrodeposition solution. The Tg difference between the water-dispersible vinyl copolymer (A) and the water-dispersible vinyl copolymer (B) contained in the obtained electrodeposition liquid was 20 ° C.

(比較例4)
製造例2で作製した低Tgネガ型電着フォトレジスト用樹脂組成物(E)1000部を高Tgネガ型電着フォトレジスト用樹脂組成物(F)と混ぜずに単独で使用した。
(比較例5)
製造例7で高Tgネガ型電着フォトレジスト用樹脂組成物(F)1000部を低Tgネガ型電着フォトレジスト用樹脂組成物(E)と混ぜずに単独で使用した。
実施例1〜9および比較例1〜5の電着液配合割合及びその評価並びに塗膜の評価を表2に示す。
(Comparative Example 4)
1000 parts of the low Tg negative electrodeposition photoresist resin composition (E) prepared in Production Example 2 was used alone without being mixed with the high Tg negative electrodeposition photoresist resin composition (F).
(Comparative Example 5)
In Production Example 7, 1000 parts of the high Tg negative electrodeposition photoresist resin composition (F) was used alone without being mixed with the low Tg negative electrodeposition photoresist resin composition (E).
Table 2 shows the electrodeposition solution blending ratios of Examples 1 to 9 and Comparative Examples 1 to 5, evaluations thereof, and evaluations of coating films.

(樹脂組成物の評価法)
実施例1〜9、比較例1〜5で作製した電着液を使用し、常法に従って陰極に厚さ0.2mmの銅板を、陽極に18−8ステンレス鋼板を用いて、浴温40℃、両極間に直流電圧を20秒間印加した。次いで電着塗布された銅板を取り出して充分に水洗したのち、60℃の温度で120秒間乾燥した。印加電圧は、5μm及び10μmの塗膜厚を得るために80V〜180Vの間で任意に変更することが可能である。上記条件にて析出させた塗膜の硬化条件を100mJ/cmおよび300mJ/cmとした。
(Evaluation method of resin composition)
Using the electrodeposition solutions prepared in Examples 1 to 9 and Comparative Examples 1 to 5, using a copper plate having a thickness of 0.2 mm as a cathode and an 18-8 stainless steel plate as an anode according to a conventional method, a bath temperature of 40 ° C. A DC voltage was applied between the two electrodes for 20 seconds. Next, the electrodeposited copper plate was taken out and washed thoroughly with water, and then dried at a temperature of 60 ° C. for 120 seconds. The applied voltage can be arbitrarily changed between 80 V and 180 V in order to obtain a coating thickness of 5 μm and 10 μm. The curing conditions of the coating film deposited under the above conditions were 100 mJ / cm 2 and 300 mJ / cm 2 .

(1)貯蔵安定性:電着液を5ケ月間室温にて静置し、沈降物の有無を判定した。
○:沈降物が発生なし、
△:沈降物がわずかに発生、
×:沈降物が多く発生。
(2)機械的液安定性:渦巻きポンプでのせん断力下における電着液の安定度を測定した。渦巻きポンプ(株式会社イワキ製MD−30)にて、10リットル/分の循環量で、電着液3リットルを45℃で8時間連続循環を行う。試験後その液を用い50×100(mm)の銅板に電着を行い、実体顕微鏡の観察にて電着塗膜中に直径50〜200μmの凝集物の有無で評価。
○:凝集物なし、
×:凝集物あり。
(1) Storage stability: The electrodeposition solution was allowed to stand at room temperature for 5 months, and the presence or absence of sediment was determined.
○: No sediment is generated,
△: Sediment is slightly generated,
X: Many sediments are generated.
(2) Mechanical liquid stability: The stability of the electrodeposition liquid under a shearing force by a spiral pump was measured. With a centrifugal pump (MD-30, manufactured by Iwaki Co., Ltd.), 3 liters of electrodeposition solution is continuously circulated at 45 ° C. for 8 hours at a circulation rate of 10 liters / minute. After the test, the solution was used for electrodeposition on a 50 × 100 (mm) copper plate, and evaluated by the presence or absence of an aggregate having a diameter of 50 to 200 μm in the electrodeposition coating film by observation with a stereomicroscope.
○: no aggregate
X: There exists an aggregate.

(3)耐めっき液性:銅板に上記方法で電着を行い温度60℃で120秒間乾燥した後に、所定のパターンのあるフォトマスク越しにメタルハライドランプにて波長365nmの光の強度を所定量、電着塗膜に露光し、温度40℃乳酸濃度1重量%の水溶液に2分間浸漬して未露光部分の電着塗膜を現像した。その後、シアン化銀めっき液(日本高純度化学株式会社製セレナブライトC)による被塗物へのめっきを50℃、20A/dmにて1分間電解めっきを行いめっきの染み込みを評価した。基材の銅板と現像後の電着塗膜界面に銀めっきが染み込み析出していれば不良、析出していなければ良とし、露光量100mJ/cmでの耐めっき液性評価の塗膜厚依存性を以下のように評価した。
○:5μm、10μmともに良、
△:5μmは不良だが10μmは良、
×:5μm、10μmともに不良
(3) Resistance to plating solution: After electrodeposition on a copper plate and drying at a temperature of 60 ° C. for 120 seconds, a predetermined amount of light with a wavelength of 365 nm is applied with a metal halide lamp through a photomask having a predetermined pattern. The electrodeposition coating film was exposed to light and immersed in an aqueous solution having a temperature of 40 ° C. and a lactic acid concentration of 1% by weight for 2 minutes to develop the electrodeposition coating film on the unexposed portion. Thereafter, plating on the object to be coated with a silver cyanide plating solution (Serenabright C manufactured by Nippon Kogyo Kagaku Co., Ltd.) was electroplated at 50 ° C. and 20 A / dm 2 for 1 minute to evaluate the penetration of the plating. If the silver plating soaks and deposits at the interface between the copper plate of the substrate and the developed electrodeposition coating film, it is judged as bad, and if it does not deposit, it is judged as good, and the coating thickness of the plating solution resistance evaluation at an exposure amount of 100 mJ / cm 2 The dependency was evaluated as follows.
○: Both 5 μm and 10 μm are good.
Δ: 5 μm is bad, but 10 μm is good,
×: Both 5 μm and 10 μm are defective.

(4)タック性
タック性:露光前に乾燥後の電着塗膜とポリエチレンフィルムの密着力で評価した。50×100(mm)の銅板に上記電着方法で塗膜厚10±1μmにして、ポリエチレンフィルムを電着塗膜に貼り合わせ40℃で20g/cm2の荷重にて、3分間密着させ、180°の角度にて剥離荷重を測定した。剥離強度の極大値平均20mN/cm以上で不良、以下で良とした。
○:極大値平均20mN/cm未満
△:極大値平均20mN/cm以上30mN/cm未満
×:極大値平均30mN/cm以上
(4) Tackiness Tackiness: evaluated by the adhesion between the electrodeposition coating film after drying and the polyethylene film before exposure. A film thickness of 10 ± 1 μm was applied to a 50 × 100 (mm) copper plate by the above electrodeposition method, and a polyethylene film was bonded to the electrodeposition coating film and adhered at 40 ° C. under a load of 20 g / cm 2 for 3 minutes. The peel load was measured at an angle of 180 °. When the average value of the peel strength was 20 mN / cm or more, it was poor.
○: Average maximum value less than 20 mN / cm △: Maximum value average 20 mN / cm or more and less than 30 mN / cm ×: Maximum value average 30 mN / cm or more

Figure 0005960899
Figure 0005960899

本発明のネガ型カチオン性電着フォトレジスト用樹脂組成物を用いた電着液は、貯蔵安定性、機械的液安定性に優れ、またそれにより形成された電着塗膜も、これまでより薄い塗膜厚で低露光量照射の硬化塗膜でも良好な耐めっき液性を示しており、産業上極めて有用である。   The electrodeposition liquid using the negative cationic electrodeposition photoresist resin composition of the present invention is excellent in storage stability and mechanical liquid stability, and the electrodeposition coating film formed thereby is more than ever. Even a cured coating film with a thin coating thickness and a low exposure dose exhibits good plating solution resistance and is extremely useful in industry.

Claims (4)

水溶性又は水分散性ビニル系共重合体、多官能(メタ)アクリレート及び光重合開始剤を含むネガ型カチオン性電着フォトレジスト用樹脂組成物であって、
水溶性又は水分散性ビニル系共重合体として、(A)Tgが5℃以上25℃未満である低Tg共重合体25重量部〜45重量部及び(B)Tgが25℃以上45℃未満の高Tg共重合体55重量部〜75重量部を含み、低Tg共重合体(A)と高Tg共重合体(B)とのTg温度差が5℃〜30℃であることを特徴とするネガ型カチオン性電着フォトレジスト用樹脂組成物。
A negative-type cationic electrodeposition photoresist resin composition comprising a water-soluble or water-dispersible vinyl copolymer, a polyfunctional (meth) acrylate, and a photopolymerization initiator,
As a water-soluble or water-dispersible vinyl copolymer, (A) 25 to 45 parts by weight of a low Tg copolymer having a Tg of 5 ° C. or more and less than 25 ° C. and (B) Tg of 25 to 45 ° C. The Tg temperature difference between the low Tg copolymer (A) and the high Tg copolymer (B) is 5 ° C. to 30 ° C. Resin composition for negative-type cationic electrodeposition photoresist.
前記ネガ型カチオン性電着フォトレジスト用樹脂組成物が、
(A)Tgが5℃以上25℃未満である低Tg共重合体25重量部〜45重量部及び
(B)Tgが25℃以上45℃未満の高Tg共重合体55重量部〜75重量部を含む水溶性又は水分散性ビニル系共重合体 50〜95重量部、
(C)1分子中にビニル基を3個以上有する多官能(メタ)アクリレート 5〜50重量部、
(D)光重合開始剤 (A)、(B)及び(C)の合計100重量部に対し1〜12重量部、
を含有することを特徴とする請求項1に記載のネガ型カチオン性電着フォトレジスト用樹脂組成物。
The negative type cationic electrodeposition photoresist resin composition is,
(A) 25 to 45 parts by weight of a low Tg copolymer having a Tg of 5 ° C. or more and less than 25 ° C. and (B) 55 to 75 parts by weight of a high Tg copolymer having a Tg of 25 to 45 ° C. 50 to 95 parts by weight of a water-soluble or water-dispersible vinyl copolymer containing
(C) 5 to 50 parts by weight of a polyfunctional (meth) acrylate having 3 or more vinyl groups in one molecule,
(D) Photopolymerization initiator 1 to 12 parts by weight with respect to 100 parts by weight in total of (A), (B) and (C),
The resin composition for negative-type cationic electrodeposition photoresists according to claim 1, comprising:
請求項1又は2に記載のネガ型カチオン性電着フォトレジスト用樹脂組成物の製造方法であって、
(A)以下の(a)及び(b)成分からなるポリマーのTgが5℃以上25℃未満である水溶性又は水分散性ビニル系共重合体 50〜95重量部、
(a)アミノアルキル置換基を有する共重合性ビニル系単量体 3〜16重量部、
(b)上記以外の共重合性ビニル系単量体 84〜97重量部、
(C)1分子中にビニル基を3個以上有する多官能(メタ)アクリレート 5〜50重量部、
(D)光重合開始剤 (A)と(C)の合計100重量部に対し1〜12重量部、
を含有する(E)低Tgネガ型カチオン性電着フォトレジスト用樹脂組成物を製造する工程、
(B)以下の(a)及び(b)成分からなるポリマーのTgが25℃以上45℃未満である水溶性又は水分散性ビニル系共重合体 50〜95重量部、
(a)アミノアルキル置換基を有する共重合性ビニル系単量体 3〜16重量部、
(b)上記以外の共重合性ビニル系単量体 84〜97重量部、
(C)1分子中にビニル基を3個以上有する多官能(メタ)アクリレート 5〜50重量部、
(D)光重合開始剤 (B)と(C)の合計100重量部に対し1〜12重量部、
を含有する(F)高Tgネガ型カチオン性電着フォトレジスト用樹脂組成物を製造する工程、
(E)低Tgネガ型カチオン性電着フォトレジスト用樹脂組成物からなる電着成分25重量部〜45重量部と(F)高Tgネガ型カチオン性電着フォトレジスト用樹脂組成物からなる電着成分55重量部〜75重量部を混合する工程、及び該混合工程において、(E)低Tgネガ型カチオン性電着フォトレジスト用樹脂組成物中の(A)成分と(F)高Tgネガ型カチオン性電着フォトレジスト用樹脂組成物中の(B)成分のTg温度差が5℃〜30℃となるように選択する工程を含むことを特徴とするネガ型カチオン性電着フォトレジスト用樹脂組成物の製造方法。
It is a manufacturing method of the resin composition for negative type cationic electrodeposition photoresists according to claim 1 or 2,
(A) 50 to 95 parts by weight of a water-soluble or water-dispersible vinyl copolymer in which the Tg of the polymer comprising the following components (a) and (b) is 5 ° C. or higher and lower than 25 ° C.
(A) 3-16 parts by weight of a copolymerizable vinyl monomer having an aminoalkyl substituent,
(B) 84 to 97 parts by weight of a copolymerizable vinyl monomer other than the above,
(C) 5 to 50 parts by weight of a polyfunctional (meth) acrylate having 3 or more vinyl groups in one molecule,
(D) 1 to 12 parts by weight with respect to a total of 100 parts by weight of the photopolymerization initiator (A) and (C),
(E) a step of producing a resin composition for low Tg negative-type cationic electrodeposition photoresist, comprising:
(B) 50 to 95 parts by weight of a water-soluble or water-dispersible vinyl copolymer having a Tg of 25 ° C. or more and less than 45 ° C., comprising a polymer comprising the following components (a) and (b):
(A) 3-16 parts by weight of a copolymerizable vinyl monomer having an aminoalkyl substituent,
(B) 84 to 97 parts by weight of a copolymerizable vinyl monomer other than the above,
(C) 5 to 50 parts by weight of a polyfunctional (meth) acrylate having 3 or more vinyl groups in one molecule,
(D) 1 to 12 parts by weight with respect to a total of 100 parts by weight of the photopolymerization initiator (B) and (C),
(F) a step of producing a resin composition for high-Tg negative-type cationic electrodeposition photoresist, comprising:
(E) 25 to 45 parts by weight of an electrodeposition component comprising a resin composition for low Tg negative cationic electrodeposition photoresist and (F) an electrode comprising a resin composition for high Tg negative type cationic electrodeposition photoresist. step of mixing the deposition component 55 parts by weight to 75 parts by weight, and in said mixing step, (E) a low Tg negative cationic electrodeposition photoresist resin composition of the component (a) (F) high Tg A negative-type cationic electrodeposition photoresist comprising a step of selecting the Tg temperature difference of the component (B) in the negative-type cationic electrodeposition photoresist resin composition to be 5 ° C. to 30 ° C. For producing a resin composition for use.
請求項1又は2に記載のネガ型カチオン性電着フォトレジスト用樹脂組成物を電着塗装して形成されることを特徴とする電着フォトレジスト塗膜。   An electrodeposition photoresist coating film formed by electrodeposition coating the resin composition for a negative cationic electrodeposition photoresist according to claim 1 or 2.
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Publication number Priority date Publication date Assignee Title
JPH01279251A (en) * 1988-05-02 1989-11-09 Mitsubishi Electric Corp Cation type electrodeposition coating method for photoresist of printed wiring
JPH03174475A (en) * 1989-12-04 1991-07-29 Kansai Paint Co Ltd Electrodeposition coating composition for photoresist for printed circuit board
JP2003330188A (en) * 2002-05-13 2003-11-19 Honny Chem Ind Co Ltd Composition for negative electrodeposition photoresist, electrodeposition liquid comprising by using the same and electrodeposition coating film formed from the liquid

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01279251A (en) * 1988-05-02 1989-11-09 Mitsubishi Electric Corp Cation type electrodeposition coating method for photoresist of printed wiring
JPH03174475A (en) * 1989-12-04 1991-07-29 Kansai Paint Co Ltd Electrodeposition coating composition for photoresist for printed circuit board
JP2003330188A (en) * 2002-05-13 2003-11-19 Honny Chem Ind Co Ltd Composition for negative electrodeposition photoresist, electrodeposition liquid comprising by using the same and electrodeposition coating film formed from the liquid

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