JP5955049B2 - マイクロガスセンサ - Google Patents
マイクロガスセンサ Download PDFInfo
- Publication number
- JP5955049B2 JP5955049B2 JP2012066993A JP2012066993A JP5955049B2 JP 5955049 B2 JP5955049 B2 JP 5955049B2 JP 2012066993 A JP2012066993 A JP 2012066993A JP 2012066993 A JP2012066993 A JP 2012066993A JP 5955049 B2 JP5955049 B2 JP 5955049B2
- Authority
- JP
- Japan
- Prior art keywords
- gas sensor
- insulating film
- detection resistor
- catalyst layer
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000001514 detection method Methods 0.000 claims description 80
- 239000003054 catalyst Substances 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 23
- 230000000630 rising effect Effects 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 67
- 239000010408 film Substances 0.000 description 37
- 238000007084 catalytic combustion reaction Methods 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 13
- 239000000919 ceramic Substances 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 11
- 238000002485 combustion reaction Methods 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 231100000572 poisoning Toxicity 0.000 description 4
- 230000000607 poisoning effect Effects 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000567 combustion gas Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Description
11 凹部空間
20 被検知素子
20A 参照素子
21 触媒層
21A セラミック焼結体層
22 検知抵抗体
23 保護膜
30 絶縁膜
31 検知抵抗体支持部
32 アーム部
33 開口部
34 アーチ部
35 開口部
A〜C パッド
X 側端部
Claims (3)
- 基板上に形成された凹部空間に、被検知対象ガスの濃度に応じた信号を出力する被検知素子を基板上に形成された絶縁膜により宙吊り状態で支持したマイクロガスセンサであって、
前記被検知素子は、前記絶縁膜における前記凹部空間と反対側の面に形成され且つ被検知対象ガスの濃度に応じて電気抵抗が変化する検知抵抗体と、前記検知抵抗体の近傍部位に設けられた前記絶縁膜の開口部を介して前記検知抵抗体の表裏に亘って周囲を覆う触媒層と、を有し、
前記絶縁膜は、前記被検知素子の側周を覆うように前記凹部空間上に形成されたアーチ部を有し、
前記触媒層は、前記絶縁膜の開口部を介して前記検知抵抗体の表裏に亘ると共に、前記アーチ部を覆った状態で前記検知抵抗体の周囲を覆い、
前記アーチ部は、パルス波形状に形成される前記検知抵抗体の立上り及び立下り方向と直交する方向に位置するものが、前記検知抵抗体の端部の立上り及び立下りの抵抗部から、隣接する立上り及び立下り間の距離であるパルス間距離よりも離れて位置している
ことを特徴とするマイクロガスセンサ。 - 平面視した状態において、前記アーチ部から前記検知抵抗体までの間に形成される開口部の大きさは、前記検知抵抗体の近傍部位に設けられた前記絶縁膜の開口部の大きさよりも大きくされている
ことを特徴とする請求項1に記載のマイクロガスセンサ。 - 前記アーチ部は、平面視して円状に形成されている
ことを特徴とする請求項1又は請求項2のいずれか1項に記載のマイクロガスセンサ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012066993A JP5955049B2 (ja) | 2012-03-23 | 2012-03-23 | マイクロガスセンサ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012066993A JP5955049B2 (ja) | 2012-03-23 | 2012-03-23 | マイクロガスセンサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013200131A JP2013200131A (ja) | 2013-10-03 |
JP5955049B2 true JP5955049B2 (ja) | 2016-07-20 |
Family
ID=49520496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012066993A Active JP5955049B2 (ja) | 2012-03-23 | 2012-03-23 | マイクロガスセンサ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5955049B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI552838B (zh) | 2013-06-24 | 2016-10-11 | 研能科技股份有限公司 | 微型氣壓動力裝置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007278996A (ja) * | 2006-04-12 | 2007-10-25 | Citizen Miyota Co Ltd | 接触燃焼式ガスセンサとその製造方法 |
JP5436147B2 (ja) * | 2009-10-26 | 2014-03-05 | 矢崎総業株式会社 | 接触燃焼式ガスセンサ |
JP2011196896A (ja) * | 2010-03-23 | 2011-10-06 | Yazaki Corp | 接触燃焼式ガスセンサ |
-
2012
- 2012-03-23 JP JP2012066993A patent/JP5955049B2/ja active Active
Also Published As
Publication number | Publication date |
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JP2013200131A (ja) | 2013-10-03 |
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