JP5943318B2 - 透明導電膜作成方法 - Google Patents
透明導電膜作成方法 Download PDFInfo
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- JP5943318B2 JP5943318B2 JP2011166506A JP2011166506A JP5943318B2 JP 5943318 B2 JP5943318 B2 JP 5943318B2 JP 2011166506 A JP2011166506 A JP 2011166506A JP 2011166506 A JP2011166506 A JP 2011166506A JP 5943318 B2 JP5943318 B2 JP 5943318B2
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- film
- nto
- transparent conductive
- gzo
- conductive film
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Description
10mm×10mmのガラス基板(精研硝子社製)上に、RFマグネトロンスパッタリング法により、Gaを5at%添加したZnO膜(GZO膜)を形成した。膜厚は約200nmとした。
Claims (1)
- 透明基板にGZO膜とNTO膜とをこの順に形成したのちにアニール処理し、同基板にGZO単層膜を形成してアニール処理したものより低抵抗化した膜を得ることを特徴とする透明導電膜の作成方法。
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JP2011166506A JP5943318B2 (ja) | 2011-07-29 | 2011-07-29 | 透明導電膜作成方法 |
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JP2011166506A JP5943318B2 (ja) | 2011-07-29 | 2011-07-29 | 透明導電膜作成方法 |
Publications (2)
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JP2013030399A JP2013030399A (ja) | 2013-02-07 |
JP5943318B2 true JP5943318B2 (ja) | 2016-07-05 |
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JP2011166506A Expired - Fee Related JP5943318B2 (ja) | 2011-07-29 | 2011-07-29 | 透明導電膜作成方法 |
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JP (1) | JP5943318B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103757612B (zh) * | 2013-05-30 | 2016-04-20 | 杨葆华 | 环保多功能导电膜的制造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1796107A4 (en) * | 2004-08-13 | 2011-10-26 | Kanagawa Kagaku Gijutsu Akad | TRANSPARENT LADDER, TRANSPARENT ELECTRODE, SOLAR CELL, LUMINESCENT ELEMENT AND DISPLAY PANEL |
JP2010080740A (ja) * | 2008-09-26 | 2010-04-08 | Sumitomo Chemical Co Ltd | 光電変換素子および光検出素子 |
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2011
- 2011-07-29 JP JP2011166506A patent/JP5943318B2/ja not_active Expired - Fee Related
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