JP5940525B2 - スレッドを使用した層のパターニング - Google Patents

スレッドを使用した層のパターニング Download PDF

Info

Publication number
JP5940525B2
JP5940525B2 JP2013517543A JP2013517543A JP5940525B2 JP 5940525 B2 JP5940525 B2 JP 5940525B2 JP 2013517543 A JP2013517543 A JP 2013517543A JP 2013517543 A JP2013517543 A JP 2013517543A JP 5940525 B2 JP5940525 B2 JP 5940525B2
Authority
JP
Japan
Prior art keywords
thread
thin film
film layer
layer
adjacent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013517543A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013533627A5 (OSRAM
JP2013533627A (ja
Inventor
ニゲマン、マイケル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cambridge Enterprise Ltd
Original Assignee
Cambridge Enterprise Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cambridge Enterprise Ltd filed Critical Cambridge Enterprise Ltd
Publication of JP2013533627A publication Critical patent/JP2013533627A/ja
Publication of JP2013533627A5 publication Critical patent/JP2013533627A5/ja
Application granted granted Critical
Publication of JP5940525B2 publication Critical patent/JP5940525B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/236—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers using printing techniques, e.g. applying the etch liquid using an ink jet printer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Photovoltaic Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Weting (AREA)
JP2013517543A 2010-07-05 2011-07-04 スレッドを使用した層のパターニング Expired - Fee Related JP5940525B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1011280.3 2010-07-05
GBGB1011280.3A GB201011280D0 (en) 2010-07-05 2010-07-05 Patterning
PCT/GB2011/051258 WO2012004589A1 (en) 2010-07-05 2011-07-04 Patterning layers by using threads

Publications (3)

Publication Number Publication Date
JP2013533627A JP2013533627A (ja) 2013-08-22
JP2013533627A5 JP2013533627A5 (OSRAM) 2014-08-21
JP5940525B2 true JP5940525B2 (ja) 2016-06-29

Family

ID=42669200

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013517543A Expired - Fee Related JP5940525B2 (ja) 2010-07-05 2011-07-04 スレッドを使用した層のパターニング

Country Status (6)

Country Link
US (1) US8865504B2 (OSRAM)
EP (1) EP2591516A1 (OSRAM)
JP (1) JP5940525B2 (OSRAM)
KR (1) KR20130143546A (OSRAM)
GB (1) GB201011280D0 (OSRAM)
WO (1) WO2012004589A1 (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9537031B2 (en) * 2013-06-28 2017-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Nozzle assembly and method for fabricating a solar cell
DE102014213978A1 (de) * 2014-07-17 2016-01-21 Belectric Opv Gmbh Verfahren zur Herstellung eines organischen Halbleiterbauteils und organisches Halbleiterbauteil
GB2528476A (en) * 2014-07-23 2016-01-27 Eight19 Ltd Roll-to-roll processing of a coated web

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4259055A (en) * 1979-10-01 1981-03-31 E. I. Du Pont De Nemours And Company Coating apparatus
US4343662A (en) 1981-03-31 1982-08-10 Atlantic Richfield Company Manufacturing semiconductor wafer devices by simultaneous slicing and etching
JP2735229B2 (ja) * 1988-08-02 1998-04-02 鐘淵化学工業株式会社 半導体装置の製法
JPH0768208A (ja) * 1993-09-06 1995-03-14 Matsushita Electric Ind Co Ltd 間欠塗布装置
US7105203B1 (en) * 1999-02-10 2006-09-12 Mastsushita Electric Industrial Co., Ltd. Intermittent coating apparatus and intermittent coating method
JP2000262947A (ja) * 1999-03-23 2000-09-26 Konica Corp 塗布装置および塗布方法
JP3619390B2 (ja) * 1999-05-27 2005-02-09 シャープ株式会社 集積型薄膜太陽電池の製造方法
US6328027B1 (en) * 1999-11-11 2001-12-11 Cti, Inc. Method for precision cutting of soluble scintillator materials
JP2003010762A (ja) * 2001-06-28 2003-01-14 Konica Corp 塗布装置及び塗布方法
JP2003303981A (ja) * 2002-04-11 2003-10-24 Matsushita Electric Ind Co Ltd 集積型太陽電池の製造方法およびパターニング装置
EP1369931A1 (en) 2002-06-03 2003-12-10 Hitachi, Ltd. Solar cell and its manufacturing method, metal plate for the same
WO2004066348A2 (de) * 2003-01-21 2004-08-05 Polyic Gmbh & Co. Kg Organisches elektronikbauteil und verfahren zur herstellung organischer elektronik
US7255896B2 (en) * 2003-05-21 2007-08-14 Konica Minolta Medical & Graphic, Inc. Producing method for die coater and coating apparatus
US20050129977A1 (en) * 2003-12-12 2005-06-16 General Electric Company Method and apparatus for forming patterned coated films
JP2006005041A (ja) * 2004-06-16 2006-01-05 Toshiba Corp 有機半導体素子とその製造方法
US20070200489A1 (en) * 2006-02-01 2007-08-30 Poon Hak F Large area organic electronic devices and methods of fabricating the same

Also Published As

Publication number Publication date
US8865504B2 (en) 2014-10-21
US20130210184A1 (en) 2013-08-15
GB201011280D0 (en) 2010-08-18
EP2591516A1 (en) 2013-05-15
JP2013533627A (ja) 2013-08-22
WO2012004589A1 (en) 2012-01-12
KR20130143546A (ko) 2013-12-31

Similar Documents

Publication Publication Date Title
Gusain et al. Roll-to-roll printing of polymer and perovskite solar cells: compatible materials and processes
US8728848B2 (en) Solution processing method for forming electrical contacts of organic devices
US11264581B2 (en) Flexible substrate material and method of fabricating an electronic thin film device
EP2803095B1 (en) Patterned organic semiconductor layers
CN102893421B (zh) 在塑料底材结构上的碳纳米管（cnt）聚合物基质的选择性蚀刻
US9735361B2 (en) Method of making a stack of the type comprising a first electrode, an active layer, and a second electrode
US8865504B2 (en) Patterning
Kovalenko et al. Printable solar cells
US9882130B2 (en) Apparatus for patterning an article
JP5456696B2 (ja) オプトエレクトロニクスデバイスを横断ウェブ方向に形成する方法、装置及びローラ
KR20170037175A (ko) 유기태양전지의 제조방법
Tsuda New dopable semiconducting polymer materials enabling novel device architecture

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140702

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140702

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150713

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150721

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20151021

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151120

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160510

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160518

R150 Certificate of patent or registration of utility model

Ref document number: 5940525

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees