JP5937873B2 - フォトマスク用基板セット、フォトマスクセット、及びパターン転写方法 - Google Patents
フォトマスク用基板セット、フォトマスクセット、及びパターン転写方法 Download PDFInfo
- Publication number
- JP5937873B2 JP5937873B2 JP2012089395A JP2012089395A JP5937873B2 JP 5937873 B2 JP5937873 B2 JP 5937873B2 JP 2012089395 A JP2012089395 A JP 2012089395A JP 2012089395 A JP2012089395 A JP 2012089395A JP 5937873 B2 JP5937873 B2 JP 5937873B2
- Authority
- JP
- Japan
- Prior art keywords
- photomask
- pattern
- transfer
- main surface
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012546 transfer Methods 0.000 title claims description 140
- 239000000758 substrate Substances 0.000 title claims description 127
- 238000000034 method Methods 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 19
- 239000010408 film Substances 0.000 description 60
- 239000011159 matrix material Substances 0.000 description 27
- 238000005259 measurement Methods 0.000 description 16
- 239000004973 liquid crystal related substance Substances 0.000 description 14
- 238000000926 separation method Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 4
- 230000007261 regionalization Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000012788 optical film Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000036632 reaction speed Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Optical Filters (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012089395A JP5937873B2 (ja) | 2011-04-13 | 2012-04-10 | フォトマスク用基板セット、フォトマスクセット、及びパターン転写方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011088781 | 2011-04-13 | ||
JP2011088781 | 2011-04-13 | ||
JP2012089395A JP5937873B2 (ja) | 2011-04-13 | 2012-04-10 | フォトマスク用基板セット、フォトマスクセット、及びパターン転写方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012230368A JP2012230368A (ja) | 2012-11-22 |
JP5937873B2 true JP5937873B2 (ja) | 2016-06-22 |
Family
ID=46992126
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012089395A Active JP5937873B2 (ja) | 2011-04-13 | 2012-04-10 | フォトマスク用基板セット、フォトマスクセット、及びパターン転写方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5937873B2 (ko) |
KR (2) | KR101319800B1 (ko) |
CN (2) | CN102736397B (ko) |
TW (1) | TWI461753B (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI668131B (zh) * | 2018-07-17 | 2019-08-11 | 沈岳正 | Positive and negative dot mixed printing method |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3250560B2 (ja) * | 2000-12-11 | 2002-01-28 | ソニー株式会社 | 半導体装置の製造方法 |
JP3627805B2 (ja) * | 2001-04-20 | 2005-03-09 | 信越化学工業株式会社 | フォトマスク用ガラス基板及びその製造方法 |
JP4340859B2 (ja) | 2003-07-25 | 2009-10-07 | 信越化学工業株式会社 | フォトマスクブランク用基板の選定方法 |
TWI329779B (en) * | 2003-07-25 | 2010-09-01 | Shinetsu Chemical Co | Photomask blank substrate, photomask blank and photomask |
TW200540565A (en) * | 2004-06-08 | 2005-12-16 | Sumitomo Chemical Co | Photosensitive resin composition |
DE102005046135B4 (de) * | 2004-09-29 | 2017-04-13 | Hoya Corp. | Substrat für Maskenrohling, Maskenrohling, Belichtungsmaske und Herstellungsverfahren für Maskenrohlingssubstrat |
JP4803576B2 (ja) * | 2004-09-29 | 2011-10-26 | Hoya株式会社 | マスクブランク用基板、マスクブランク、露光用マスク、半導体デバイスの製造方法、及びマスクブランク用基板の製造方法 |
JP5153998B2 (ja) * | 2005-02-25 | 2013-02-27 | Hoya株式会社 | マスクブランク用透明基板の製造方法、マスクブランクの製造方法、露光用マスクの製造方法、及び半導体デバイスの製造方法 |
JP4362732B2 (ja) * | 2005-06-17 | 2009-11-11 | 信越化学工業株式会社 | フォトマスク用大型ガラス基板及びその製造方法、コンピュータ読み取り可能な記録媒体、並びにマザーガラスの露光方法 |
US7608542B2 (en) * | 2005-06-17 | 2009-10-27 | Shin-Etsu Chemical Co., Ltd. | Large-size glass substrate for photomask and making method, computer-readable recording medium, and mother glass exposure method |
JP2009037203A (ja) * | 2007-07-12 | 2009-02-19 | Hoya Corp | パターン形成方法、薄膜トランジスタ基板の製造方法及び液晶表示装置の製造方法、並びにフォトマスク |
JP4971278B2 (ja) * | 2008-09-25 | 2012-07-11 | 信越化学工業株式会社 | フォトマスクブランクスの選択方法及び製造方法並びにフォトマスクの製造方法 |
JP5335351B2 (ja) * | 2008-10-01 | 2013-11-06 | Hoya株式会社 | マスクブランク用基板セット、マスクブランクセット、フォトマスクセット、及び半導体デバイスの製造方法 |
JP5331638B2 (ja) * | 2008-11-04 | 2013-10-30 | Hoya株式会社 | 表示装置製造用フォトマスクの製造方法及び描画装置 |
KR101680866B1 (ko) * | 2008-11-26 | 2016-11-29 | 호야 가부시키가이샤 | 마스크블랭크용 기판 |
JP4853684B2 (ja) * | 2009-03-31 | 2012-01-11 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスク |
KR101270659B1 (ko) * | 2009-05-27 | 2013-06-03 | 주식회사 에스앤에스텍 | 블랭크 마스크 기판, 블랭크 마스크 및 그의 제조 방법 |
-
2012
- 2012-04-10 JP JP2012089395A patent/JP5937873B2/ja active Active
- 2012-04-12 TW TW101113081A patent/TWI461753B/zh active
- 2012-04-12 CN CN201210106982.3A patent/CN102736397B/zh active Active
- 2012-04-12 CN CN201410219079.7A patent/CN103955111B/zh active Active
- 2012-04-12 KR KR1020120037814A patent/KR101319800B1/ko active IP Right Grant
-
2013
- 2013-08-26 KR KR1020130101162A patent/KR101805953B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN103955111A (zh) | 2014-07-30 |
CN102736397A (zh) | 2012-10-17 |
TW201303384A (zh) | 2013-01-16 |
TWI461753B (zh) | 2014-11-21 |
KR101319800B1 (ko) | 2013-10-17 |
KR101805953B1 (ko) | 2017-12-06 |
CN102736397B (zh) | 2015-04-01 |
KR20130103470A (ko) | 2013-09-23 |
JP2012230368A (ja) | 2012-11-22 |
KR20120116875A (ko) | 2012-10-23 |
CN103955111B (zh) | 2017-07-28 |
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