JP5937108B2 - 粒子放射線の非電離効果に関連する線量を測定する方法 - Google Patents
粒子放射線の非電離効果に関連する線量を測定する方法 Download PDFInfo
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- JP5937108B2 JP5937108B2 JP2013552240A JP2013552240A JP5937108B2 JP 5937108 B2 JP5937108 B2 JP 5937108B2 JP 2013552240 A JP2013552240 A JP 2013552240A JP 2013552240 A JP2013552240 A JP 2013552240A JP 5937108 B2 JP5937108 B2 JP 5937108B2
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- Prior art keywords
- capacitive element
- capacitance
- radiation
- dose
- ionizing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005855 radiation Effects 0.000 title claims description 26
- 230000000694 effects Effects 0.000 title claims description 14
- 239000002245 particle Substances 0.000 title claims description 11
- 238000000034 method Methods 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 5
- 239000002800 charge carrier Substances 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims 1
- 230000005865 ionizing radiation Effects 0.000 description 8
- 238000005259 measurement Methods 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 206010073306 Exposure to radiation Diseases 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004980 dosimetry Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/02—Dosimeters
- G01T1/026—Semiconductor dose-rate meters
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Description
Claims (2)
- 粒子放射線の非電離効果に関連する線量(Φeq)を測定する方法であって、
半導体材料から形成される電極を備えるMOS型の容量素子(2)に放射線を照射するステップと、
基板の電荷キャリアが誘電体/半導体界面へ向けて引き付けられる容量素子のバイアス状態に対応する蓄積状態の前記容量素子のキャパシタンス(CM)を測定するステップと、
前記蓄積状態の前記容量素子のキャパシタンスの測定値から非電離効果に関連する線量(Φeq)を決定するステップと、
を備えることを特徴とする方法。 - 最初に、異なる放射線レベルを受ける基準容量素子を用いて、前記キャパシタンス(CM)を非電離効果に関連する線量(Φeq)に対して関連付けるチャートを形成するステップと、前記チャートを読み取って、非電離効果に関連する線量(Φeq)を決定するステップとを備える請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1100303A FR2971053B1 (fr) | 2011-02-01 | 2011-02-01 | Mesure de radiations de haute fluence par un element capacitif de type mos |
FR1100303 | 2011-02-01 | ||
PCT/FR2012/000040 WO2012104505A1 (fr) | 2011-02-01 | 2012-01-31 | Mesure de radiations de haute fluence par un element capacitif de type mos |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014508926A JP2014508926A (ja) | 2014-04-10 |
JP5937108B2 true JP5937108B2 (ja) | 2016-06-22 |
Family
ID=45819225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013552240A Expired - Fee Related JP5937108B2 (ja) | 2011-02-01 | 2012-01-31 | 粒子放射線の非電離効果に関連する線量を測定する方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8981308B2 (ja) |
EP (1) | EP2671095A1 (ja) |
JP (1) | JP5937108B2 (ja) |
FR (1) | FR2971053B1 (ja) |
WO (1) | WO2012104505A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6512623B2 (ja) * | 2014-02-07 | 2019-05-15 | 国立大学法人北海道大学 | 吸収線量測定システムおよび測定装置および方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4529884A (en) * | 1982-09-22 | 1985-07-16 | Wolicki Eligius A | Spectral dosimeter |
JPS61161480A (ja) * | 1985-01-10 | 1986-07-22 | Sumitomo Electric Ind Ltd | 放射線集積線量のモニタ方法及び装置 |
JPS63316439A (ja) * | 1987-06-19 | 1988-12-23 | Fuji Electric Co Ltd | プラズマ反応利用処理方法 |
JPH02118421A (ja) * | 1988-10-28 | 1990-05-02 | Hitachi Ltd | フオトン数の測定方法 |
US20110003279A1 (en) * | 2009-06-04 | 2011-01-06 | Gordhanbhai Nathalal Patel | Monitoring devices and processes based on transformation, destruction and conversion of nanostructures |
-
2011
- 2011-02-01 FR FR1100303A patent/FR2971053B1/fr not_active Expired - Fee Related
-
2012
- 2012-01-31 US US13/982,586 patent/US8981308B2/en not_active Expired - Fee Related
- 2012-01-31 JP JP2013552240A patent/JP5937108B2/ja not_active Expired - Fee Related
- 2012-01-31 WO PCT/FR2012/000040 patent/WO2012104505A1/fr active Application Filing
- 2012-01-31 EP EP12708560.3A patent/EP2671095A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
WO2012104505A8 (fr) | 2013-09-19 |
US8981308B2 (en) | 2015-03-17 |
FR2971053B1 (fr) | 2015-12-11 |
FR2971053A1 (fr) | 2012-08-03 |
US20140034841A1 (en) | 2014-02-06 |
EP2671095A1 (fr) | 2013-12-11 |
JP2014508926A (ja) | 2014-04-10 |
WO2012104505A1 (fr) | 2012-08-09 |
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