JP5916792B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a semiconductor device using a SiC (silicon carbide) semiconductor substrate and a method for manufacturing the same.

  Conventionally, a power MOSFET using a Si (silicon) semiconductor substrate has been used for a power source (especially one using an inverter) of a household consumer device or an electric vehicle (for example, a hybrid vehicle). In the field of power electronics, loss in devices during power conversion is a problem, and low loss is an issue, but it is said that power MOSFETs using Si materials are approaching the technical limits. As a result, it is difficult to achieve higher efficiency.

  Therefore, research on application of SiC semiconductors to power devices is underway. SiC is a compound with excellent physical properties such as 3 times the band gap of Si and 10 times the dielectric breakdown electric field of Si. When applied to power devices, it realizes a device with lower loss than Si-based power devices. it can. However, a MOSFET using an SiC semiconductor substrate has a problem that the resistance of the channel portion is high, and is said to be difficult to put into practical use.

  FIG. 8 is a schematic cross-sectional view showing a structural example of a power MOSFET using a SiC semiconductor substrate. An N-type SiC epitaxial layer 2 is formed on the N-type SiC semiconductor substrate 1, and a MOS structure is formed in the surface layer portion of the SiC epitaxial layer 2. That is, a plurality of P-type wells 3 are formed at intervals in the surface layer portion of the SiC epitaxial layer 2, and a gate insulating film is formed on the SiC epitaxial layer 2 in a region straddling the adjacent P-type well 3. A gate electrode 5 is formed with 4 interposed therebetween. In FIG. 8, the gate electrode 5 is shown separated, but these are continuous at positions not shown.

In each P-type well 3, an N ⁺ -type source layer 6 is formed along the edge of the gate electrode 5, and a P ⁺ -type layer 7 connected to the P-type well 3 is further formed. N ⁺ type source layer 6 and P ⁺ type layer 7 are connected to contact metal 8 (for example, made of Ni) formed on the surface of SiC epitaxial layer 2. The contact metal 8 is joined to and electrically connected to the source electrode 11 through the interlayer insulating film 9 covering the gate electrode 5 and the contact hole 10 formed in the gate insulating film 4. The source electrode 11 is made of a metal layer (for example, made of Al) formed so as to cover almost the entire surface of the interlayer insulating film 9, enters the contact hole 10, and comes into contact with the contact metal 8. .

  With such a configuration, when an appropriate voltage is applied to the gate electrode 5, an inversion layer is generated in the channel region 12 located immediately below the gate electrode 5 in the P-type well 3, and the SiC semiconductor substrate 1 as the drain region and the source Conduction with the layer 6 is conducted. In this way, transistor operation is possible.

Japanese Unexamined Patent Publication No. 2000-22137 (FIG. 7)

  In the case of the power MOSFET configured as described above, if the interval between the P-type wells 3 is narrow, the current passing through the gap receives a so-called JFET (Junction Field-Effect Transistor) resistance, and the on-resistance becomes high. Of course, this problem can be solved by widening the interval between the P-type wells 3, but in this case, the channel width per unit area (total extension of the channel region 12) is shortened and the channel resistance is increased. Resulting in. That is, the result is that the large channel resistance, which should be called the greatest problem in the MOSFET using the SiC semiconductor, is further increased, and the on-resistance is increased.

Therefore, reduction of the on-resistance (including JFET resistance and channel resistance) of the MOSFET using the SiC semiconductor has been a problem that cannot be easily achieved.
Accordingly, an object of the present invention is to provide a semiconductor device capable of effectively reducing on-resistance while using a SiC semiconductor, and a method for manufacturing the same.

In order to achieve the above object, the invention according to claim 1 is a semiconductor device constituting a MOSFET or an IGBT, which functions as a drain region, and a SiC semiconductor substrate (20) of the first conductivity type, and the SiC semiconductor. A plurality of wells (23) of a second conductivity type different from the first conductivity type and formed by introducing impurities of the first conductivity type between the adjacent wells. The first conductivity type first impurity diffusion layer (41), which overlaps the edge of the well and has a higher impurity concentration than the SiC semiconductor substrate, is spaced apart from the impurity diffusion layer within each well. A source diffusion region (26) of the first conductivity type formed by introducing the impurity of the first conductivity type into the region, overlapping the source diffusion region in the well, and the source diffusion region A second impurity diffusion layer (42) of the first conductivity type that protrudes to the first impurity diffusion layer side and has an impurity concentration higher than that of the SiC semiconductor substrate, and the second impurity diffusion layer includes: The layer thickness is smaller than that of the source diffusion region and is substantially the same as that of the first impurity diffusion layer, and is separated from the first impurity diffusion layer by a certain distance everywhere on the SiC semiconductor substrate, A channel region (35) is provided in the well between the first impurity diffusion layer and the second impurity diffusion layer, and in the pair of adjacent wells on the channel region and the first impurity diffusion layer. A gate electrode (25) covering the entire first impurity diffusion layer via a gate insulating film (24) is disposed continuously between the pair of channel regions formed respectively. It is a device. The alphanumeric characters in parentheses indicate corresponding components in the embodiments described later. The same applies hereinafter.

  According to this configuration, by providing the first impurity diffusion layer of the first conductivity type between adjacent wells, it is possible to reduce the JFET resistance received by the current passing through the region between the wells. Therefore, since the interval between the wells can be narrowed, when the gate electrode (25) is provided between the adjacent wells, the interval between the adjacent gate electrodes can be shortened to achieve a fine structure. In this way, the channel width per unit area can be increased, and the JFET resistance can be kept low, so the on-resistance can be reduced.

Furthermore, in the configuration of the present invention, a region in the well between the first impurity diffusion layer and the second impurity diffusion layer can be used as a channel region. By disposing the gate electrode over the channel region via an insulating film, the formation of the inversion layer in the channel region can be controlled, and the current between the first impurity diffusion layer and the second impurity diffusion layer can be controlled.
As described above, since the channel width can be increased by shortening the distance between the wells, the problem of high channel resistance unique to the SiC semiconductor can be overcome and the on-resistance can be reduced.

Further, the channel length defined by the distance between the first and second impurity diffusion layers is constant everywhere. Therefore, stable device characteristics can be obtained, and variations in characteristics between products can be suppressed.
Preferably, the first impurity diffusion layer and the second impurity diffusion layer are simultaneously formed by ion implantation using the same mask.

A third aspect of the present invention is the semiconductor device according to the first or second aspect, wherein an interval between the first impurity diffusion layer and the second impurity diffusion layer is not less than 0.3 μm and not more than 2.0 μm.
In this configuration, since the channel length defined by the distance between the first impurity diffusion layer and the second impurity diffusion layer is short, the channel resistance can be reduced, and the on-resistance can be further reduced.

  According to a fourth aspect of the present invention, there is provided a second conductivity type layer (27) formed in an inner region of the source diffusion region and configured to be the second conductivity type for wiring connection of the well, and the gate electrode An interlayer insulating film (29) covering the second insulating layer and the gate insulating film, wherein the second conductive type layer and a part of the source diffusion region around the second conductive type layer are exposed. A contact hole (30) is formed, and a contact metal (28) provided at the bottom of the contact hole is electrically connected to the second conductivity type layer and the source diffusion region. It is a semiconductor device as described in any one of Claims 1-3.

According to a fifth aspect of the present invention, a source electrode (31) is formed so as to cover substantially the entire surface of the interlayer insulating film, and the source electrode enters a contact hole and is joined to the contact metal. 4. The semiconductor device according to 4.
The invention according to claim 6 is a method of manufacturing a semiconductor device constituting a MOSFET or IGBT, and is different from the first conductivity type on a first conductivity type SiC semiconductor substrate (20) to be a drain region. Forming a plurality of second conductivity type wells (23) at intervals, and introducing the first conductivity type impurities into each well to form the first conductivity type source diffusion region; Introducing a first conductivity type impurity between the adjacent wells to form a first conductivity type first impurity diffusion layer (41) having an impurity concentration higher than that of the SiC semiconductor substrate; An impurity of the first conductivity type is introduced into the well and overlaps with the source diffusion region in the well and protrudes from the source diffusion region to the first impurity diffusion layer side, which is impure than the SiC semiconductor substrate. Forming a second impurity diffusion layer of the first conductivity type having a high concentration, and a channel region which is a region in the well between the first impurity diffusion layer and the second impurity diffusion layer, and A gate electrode that covers the entire first impurity diffusion layer through a gate insulating film continuously over a pair of adjacent channel wells formed between a pair of adjacent wells on one impurity diffusion layer. The second impurity diffusion layer so that the layer thickness of the second impurity diffusion layer is smaller than the layer thickness of the source diffusion region and substantially the same as the first impurity diffusion layer. A diffusion layer and the source diffusion region are formed, and the second impurity diffusion layer is constant from the first impurity diffusion layer where the first impurity diffusion layer and the second impurity diffusion layer extend over the SiC semiconductor substrate. Distance are formed as separated, a method of manufacturing a semiconductor device. By this method, the semiconductor device according to claim 1 can be obtained.

In addition, according to this method, the distance between the first impurity diffusion layer and the second impurity diffusion layer can be accurately defined, so that these distances are shortened (for example, 0.3 μm to 2.0 μm). Can do. Thereby, the channel length can be shortened and the channel resistance can be reduced.
According to a seventh aspect of the present invention, the first impurity diffusion layer and the second impurity diffusion layer are ions using a single mask having openings corresponding to the first impurity diffusion layer and the second impurity diffusion layer. The method of manufacturing a semiconductor device according to claim 6, wherein the semiconductor device is formed simultaneously by implantation.

  The invention according to claim 8 is the semiconductor device according to claim 6 or 7, wherein the step of forming the source diffusion region and the step of forming the second impurity diffusion layer are performed by separate ion implantation steps. It is a manufacturing method.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic cross-sectional view showing a configuration of a power MOSFET as an individual semiconductor element according to an embodiment of the present invention. This power MOSFET includes a SiC semiconductor substrate 20 produced by growing an N-type SiC epitaxial layer 22 on an N ⁺ -type SiC substrate 21. A plurality of P-type wells 23 are formed at intervals in the surface layer portion of the N-type epitaxial layer 22. In this embodiment, each P-type well 23 is formed in a rectangular shape (including a square), for example, as shown in the schematic plan view of FIG. 2, and the rectangular P-type well 23 is formed on the SiC semiconductor substrate. For example, it is formed on 20 by being distributed and arranged in a lattice pattern.

A gate electrode 25 is formed on the surface of the SiC semiconductor substrate 20 with a gate insulating film 24 interposed therebetween so as to extend over a region between adjacent P-type wells 23. In each P-type well 23, an N ⁺ -type source layer 26 is formed at a position facing the edge of the gate electrode 25 through the gate insulating film 24. In this embodiment, the N ⁺ type source layer 26 has a rectangular shape substantially similar to that of the P type well 23, and a P ⁺ type for wiring connection of the P type well 23 is provided at the inner central portion thereof. Layer 27 is formed.

The gate electrode 25 is covered with an interlayer insulating film 29. In the interlayer insulating film 29 and the gate insulating film 24, a contact hole 30 is formed to expose a P ⁺ type layer 27 and a part of the N + type source layer 26 around the P ⁺ type layer 27. A contact metal 28 is formed at the bottom of the contact hole 30, and the contact metal 28 is electrically connected to the P ⁺ type layer 27 and the N ⁺ type source layer 26. Further, a source electrode 31 is formed so as to cover almost the entire surface of the interlayer insulating film 29, and the source electrode 31 enters the contact hole 30 and is joined to the contact metal 28. A drain electrode 32 is formed on the lower surface of the SiC substrate 21 serving as the drain.

In the surface layer portion (the surface layer portion of the SiC semiconductor substrate 20) of the N-type epitaxial layer 22, the first N-type impurity diffusion layer 41 (FIG. In FIG. 2, a hatched area surrounded by a two-dot chain line is formed. The first N-type impurity diffusion layer 41 is formed so as to overlap the edge of the P-type well 23. On the other hand, in the P-type well 23, a second N-type impurity diffusion layer 42 (indicated by a hatched area surrounded by a two-dot chain line in FIG. 2) so as to face the edge of the first N-type impurity diffusion layer 41. Is formed. The first 2N-type impurity diffusion layer 42, in this embodiment, is formed in a rectangular ring shape, with substantially overlapping the N ⁺ -type source layer 26, it protrudes from the N ⁺ -type source layer 26 outwardly, the edges The portion is disposed in the P-type well 23.

In this embodiment, the first N-type impurity diffusion layer 41 and the second N-type impurity diffusion layer 42 are formed in a self-aligned manner by ion implantation using a common mask, and the first and second N-type impurity diffusion layers 41 are formed. 42, the distance between the opposing edges is constant everywhere. This distance is preferably set to 0.3 μm to 2.0 μm, for example.
With such a configuration, when an appropriate voltage is applied to the gate electrode 25, an inversion layer (channel) is formed on the surface of the P-type well 23 facing the gate electrode 25 via the gate insulating film 24 (channel region 35). Will be formed. Through this inversion layer, the first and second N-type impurity diffusion layers 41 and 42 are electrically connected, and a current from the N-type SiC semiconductor substrate 20 functioning as a drain region to the source electrode 31 flows.

In the P ⁺ -type well 23, the P-type region between the first and second N-type impurity diffusion layers 41 and 42 substantially functions as the channel region 35. The distance (channel length) L of the channel region 35 is defined by the distance between the first and second N-type impurity diffusion layers 41 and 42. As described above, this distance is constant everywhere. ing. Therefore, stable device characteristics can be obtained, and variations in characteristics between products can be suppressed.

  Further, since the first N-type impurity diffusion layer 41 is formed in the region between the P-type wells 23, the JFET resistance received when a current passes between the adjacent P-type wells 23 is reduced. . Therefore, a plurality of P-type wells 23 can be arranged close to each other without greatly increasing the JFET resistance. As a result, a large number of P-type wells 23 can be arranged in a unit area to achieve a fine structure. Thereby, the channel width which is the total extension of the channel region 35 can be significantly increased. As a result, a low on-resistance can be realized.

In addition, since the first and second N-type impurity diffusion layers 41 and 42 are formed in a self-aligned manner by ion implantation using a common mask, the distance between them is set short to shorten the channel length L. be able to. As a result, the channel resistance can be further reduced, so that the on-resistance can be further reduced.
3A to 3F are schematic cross-sectional views for explaining the manufacturing process of the power MOSFET described above. First, as shown in FIG. 3A, an N-type epitaxial layer 22 is grown on an N ⁺ -type SiC substrate 21, and then a P-type well 23 is formed by ion implantation. Further, a P ⁺ -type layer 27 is formed by ion-implanting a P-type impurity in a substantially central portion of the P-type well 23 using another mask.

Next, as shown in FIG. 3B, an N ⁺ type source layer 26 is formed by implanting N type impurity ions using another mask.
Thereafter, as shown in FIG. 3C, first and second N-type impurity ions are implanted by implanting N-type impurity ions using an ion implantation mask 37 having openings corresponding to the first and second N-type impurity diffusion layers 41 and. 2N type impurity diffusion layers 41 and 42 are formed simultaneously.

Next, as shown in FIG. 3D, a gate insulating film 24 is formed on the surface of the SiC semiconductor substrate 20, and a gate electrode 25 (for example, made of polysilicon) having a pattern exposing the central region of the P-type well 23 is formed. It is formed. An opening that exposes a partial region of the P ⁺ -type layer 27 and the N ⁺ -type source layer 26 is formed in the central portion of the gate insulating film 24 in the region exposed from the gate electrode 25. For example, a contact metal 28 made of Ni is embedded. In addition, a metal film to be the drain electrode 32 is formed on the lower surface of the N + type SiC substrate 21.

Next, as shown in FIG. 3E, an interlayer insulating film 29 (for example, made of SiO ₂ ) having a contact hole 30 is formed in the upper region of the contact metal 28, and the gate electrode 25 is covered with the interlayer insulating film 29. It will be.
Then, as shown in FIG. 3F, a metal film (for example, made of Al) constituting the source electrode 31 is formed on the entire surface. The source electrode 31 enters the contact hole 30 and is joined to the contact metal 28.

In this way, the power MOSFET having the structure shown in FIG. 1 can be obtained.
Since the first and second N-type impurity diffusion layers 41 and 42 are formed in a self-aligned manner by ion implantation using the ion implantation mask 37 in common, the channel length L defined by the distance between them is It becomes constant everywhere on the SiC semiconductor substrate 20. Thereby, stable device characteristics can be obtained, and variations in characteristics among products can be suppressed.

FIG. 4 is a schematic cross-sectional view for explaining the configuration of the power MOSFET according to the reference embodiment. In FIG. 4, the same reference numerals as those in FIG. 1 are attached to the portions corresponding to the respective portions shown in FIG. In this reference embodiment, the second N-type impurity diffusion layer 42 in the first embodiment is not provided. On the other hand, in a region surrounding the P-type well 23 (region between the P-type wells 23), an N-type impurity diffusion layer 41 in which an edge portion enters the P-type well 23 is formed. Therefore, the region between the N-type impurity diffusion layer 41 and the N ⁺ -type source layer 26 becomes the channel region 35, and the channel length L is defined by the distance between them.

In this reference embodiment, N-type impurity diffusion layer 41, using a common ion implantation mask and N ⁺ -type source layer 26, have been formed in a self-aligned manner, the N ⁺ type source layer 26 is a 2N-type impurity diffusion Take a role as a layer. Therefore, as in the case of the first embodiment, the channel length L is constant everywhere on the substrate 20, and stable device characteristics can be obtained.

Of course, since the JFET resistance can be reduced by the N-type impurity diffusion layer 41, the distance between the P-type wells 23 can be reduced to achieve a fine structure, thereby increasing the channel width and the on-resistance. Can be reduced. In addition, since the N-type impurity diffusion layer 41 and the N ⁺ -type source layer 26 are formed in a self-aligned manner, the distance between them is shortened (for example, 0.3 μm to 2.0 μm), and the channel length L Can be shortened. As a result, the channel resistance can be further reduced and the on-resistance can be reduced.

  FIG. 5 shows a configuration according to another reference embodiment in which the N-type impurity diffusion layer 41 is formed so as not to enter the P-type well 23 by modifying the configuration shown in FIG. Even with this configuration, the JFET resistance received by the current passing between the adjacent P-type wells 23 can be reduced. Therefore, the distance between the P-wells 23 can be reduced to achieve a fine structure, and the gate width can be increased. Thus, the on-resistance can be reduced.

FIG. 6 shows a modification of the configuration of FIG. 4 described above in which the N-type impurity diffusion layer 41 is formed by an ion implantation process different from the ion implantation for forming the N ⁺ -type source layer 26. The structure which concerns on the reference form is shown. Similarly, in FIG. 7, the configuration of FIG. 5 is modified to form the N-type impurity diffusion layer 41 by an ion implantation process different from the ion implantation for forming the N ⁺ -type source layer 26. In addition, a configuration according to still another reference embodiment is shown. In these cases, the layer thickness of the N ⁺ -type source layer 26 and the layer thickness of the N-type impurity diffusion layer 41 are different. That is, in the configuration shown in FIG. 6, the N-type impurity diffusion layer 41 is thinner than the N ⁺ -type source layer 26. On the other hand, in the configuration shown in FIG. 7, the layer thickness of the N-type impurity diffusion layer 41 is thicker than the layer thickness of the N ⁺ -type source layer 26.

6 and 7, the impurity concentration and the layer thickness of the N-type impurity diffusion layer 41 can be determined without depending on the N ⁺ -type source layer 26. Therefore, the impurity concentration and the diffusion depth of the N-type impurity diffusion layer 41 can be appropriately determined in consideration of the target value of JFET resistance reduction and the required breakdown voltage, which enables stable device characteristics and on-resistance. A power MOSFET that achieves both reductions can be configured.

As mentioned above, although embodiment of this invention was described, this invention can also be implemented with another form. For example, in the above-described embodiment, the power MOSFET is taken as an example, but the present invention can also be applied to a semiconductor device having another structure such as an IGBT (Insulated Gate Bipolar Transistor).
In the above-described embodiment, an example in which an N-channel MOSFET is formed on the N-type SiC semiconductor substrate 20 has been described. However, a P-type SiC semiconductor substrate is used, and the conductivity type of each part is the case of each of the above-described embodiments. On the contrary, a P-channel type MOSFET may be configured.

In addition, various design changes can be made within the scope of matters described in the claims.
The following features can be further extracted from this specification. The alphanumeric characters in parentheses indicate the corresponding components in the above-described embodiment.
1. A first conductivity type SiC semiconductor substrate (20) and a plurality of wells (23) of a second conductivity type different from the first conductivity type, which are formed on the SiC semiconductor substrate at intervals, are adjacent to each other. And an impurity diffusion layer (41) formed by introducing the first conductivity type impurity between the wells. According to this configuration, by providing the first conductivity type impurity diffusion layer between adjacent wells, it is possible to reduce the JFET resistance received by the current passing through the region between the wells. Therefore, since the interval between the wells can be narrowed, when the gate electrode (25) is provided between the adjacent wells, the interval between the adjacent gate electrodes can be shortened to achieve a fine structure. In this way, the channel width per unit area can be increased, and the JFET resistance can be kept low, so the on-resistance can be reduced.
2. The semiconductor according to “1.”, further including a source diffusion region (26) formed by introducing the impurity of the first conductivity type into a region spaced apart from the impurity diffusion layer in each well. apparatus. According to this configuration, a region in the well between the impurity diffusion layer and the source diffusion region can be a channel region. By disposing the gate electrode over the channel region via an insulating film, the formation of the inversion layer in the channel region can be controlled, and the current between the source diffusion region and the impurity diffusion layer can be controlled. As described above, since the channel width can be increased by shortening the distance between the wells, the problem of high channel resistance unique to the SiC semiconductor can be overcome and the on-resistance can be reduced.
3. The semiconductor device according to “1.” or “2.”, wherein the impurity diffusion layer is formed so as not to overlap the well.
4). The semiconductor device according to “1.” or “2.”, wherein the impurity diffusion layer overlaps the well at an edge.
5. The semiconductor device according to “2.”, wherein an interval between the impurity diffusion layer and the source diffusion region is 0.3 μm or more and 2.0 μm or less. In this configuration, since the channel length defined by the distance between the impurity diffusion layer and the source diffusion region is short, the channel resistance can be reduced and the on-resistance can be further reduced.
6). A step of forming a plurality of second conductivity type wells (23) different from the first conductivity type on the first conductivity type SiC semiconductor substrate (20), and a gap between adjacent wells; And a step of forming an impurity diffusion layer (41) by introducing an impurity of the first conductivity type. By this method, the semiconductor device described in “1.” can be obtained.
7). The source diffusion region is formed simultaneously with the formation of the impurity diffusion layer by ion implantation using the same mask as the mask for forming the impurity diffusion layer in a region spaced apart from the impurity diffusion layer in each well. The method for manufacturing a semiconductor device according to “6.”, further including a step of forming (26). According to this method, since the distance between the impurity diffusion layer and the source diffusion layer can be accurately defined, the distance can be shortened (for example, 0.3 μm to 2.0 μm). Thereby, the channel length can be shortened and the channel resistance can be reduced.

1 is a schematic cross-sectional view showing a configuration of a power MOSFET as an individual semiconductor element according to an embodiment of the present invention. FIG. 3 is a schematic plan view of a part of the power MOSFET. 3A to 3F are schematic cross-sectional views for explaining the manufacturing process of the power MOSFET described above. It is an illustration sectional view for explaining the composition of power MOSFET concerning a reference form. It is an illustration sectional view showing the modification of the above-mentioned reference form. It is an illustration sectional view showing the composition of power MOSFET concerning another reference form. FIG. 6 is a schematic cross-sectional view showing a configuration of a power MOSFET according to another reference embodiment. It is an illustrative sectional view showing a structural example of a conventional power MOSFET using a SiC semiconductor substrate.

20 N type semiconductor substrate 21 N ⁺ type SiC substrate 22 N type epitaxial layer 23 P type well 24 Gate insulating film 25 Gate electrode 26 N ⁺ type source layer 27 P ⁺ type layer 28 Contact metal 29 Interlayer insulating film 30 Contact hole 31 Source Electrode 32 Drain electrode 35 Channel region 37 Ion implantation mask 41 First N-type impurity diffusion layer 42 Second N-type impurity diffusion layer

Claims (8)

A semiconductor device constituting a MOSFET or IGBT,
A first conductivity type SiC semiconductor substrate functioning as a drain region;
A plurality of wells of a second conductivity type different from the first conductivity type formed on the SiC semiconductor substrate at intervals,
The first conductivity type first impurity diffusion layer formed by introducing the first conductivity type impurity between the adjacent wells, overlapping the edge of the well, and having an impurity concentration higher than that of the SiC semiconductor substrate; ,
A source diffusion region formed by introducing the first conductivity type impurity into a region spaced apart from the first impurity diffusion layer in each well; and
A second impurity diffusion of the first conductivity type that overlaps with the source diffusion region in the well and protrudes from the source diffusion region to the first impurity diffusion layer side and has an impurity concentration higher than that of the SiC semiconductor substrate. Including layers,
The second impurity diffusion layer is thinner than the source diffusion region and has substantially the same thickness as the first impurity diffusion layer, and is constant from the first impurity diffusion layer everywhere on the SiC semiconductor substrate. Are separated by a distance of
A channel region is provided in the well between the first impurity diffusion layer and the second impurity diffusion layer;
On the channel region and the first impurity diffusion layer, the entire first impurity diffusion layer is gate-insulated continuously between a pair of channel regions respectively formed in a pair of adjacent wells. A semiconductor device in which a gate electrode covering a film is disposed.   The semiconductor device according to claim 1, wherein the first impurity diffusion layer and the second impurity diffusion layer are simultaneously formed by ion implantation using the same mask.   3. The semiconductor device according to claim 1, wherein an interval between the first impurity diffusion layer and the second impurity diffusion layer is 0.3 μm or more and 2.0 μm or less. A second conductivity type layer formed in an inner region of the source diffusion region and having the second conductivity type for wiring connection of the well;
An interlayer insulating film covering the gate electrode;
The interlayer insulating film and the gate insulating film are formed with contact holes for exposing the second conductive type layer and a part of the source diffusion region around the second conductive type layer. The semiconductor device according to claim 1, wherein a contact metal provided at a bottom portion of the hole is electrically connected to the second conductivity type layer and the source diffusion region.   The semiconductor device according to claim 4, wherein a source electrode is formed so as to cover substantially the entire surface of the interlayer insulating film, and the source electrode enters a contact hole and is joined to the contact metal. A method of manufacturing a semiconductor device constituting a MOSFET or IGBT,
Forming a plurality of wells of a second conductivity type different from the first conductivity type on a first conductivity type SiC semiconductor substrate serving as a drain region, with a gap therebetween;
Introducing a first conductivity type impurity into each well to form the first conductivity type source diffusion region;
Introducing a first conductivity type impurity between the adjacent wells to form a first conductivity type first impurity diffusion layer having an impurity concentration higher than that of the SiC semiconductor substrate;
An impurity of the first conductivity type is introduced into the well, overlaps with the source diffusion region in the well, and protrudes from the source diffusion region to the first impurity diffusion layer side, and is more impurity than the SiC semiconductor substrate. Forming a second impurity diffusion layer of the first conductivity type having a high concentration;
A pair of adjacent wells formed in a pair of adjacent wells on a channel region which is a region in the well between the first impurity diffusion layer and the second impurity diffusion layer and on the first impurity diffusion layer. Disposing a gate electrode that covers the entire first impurity diffusion layer through a gate insulating film continuously between the channel regions,
The second impurity diffusion layer and the source diffusion region are formed so that the layer thickness of the second impurity diffusion layer is smaller than the layer thickness of the source diffusion region and substantially the same as the first impurity diffusion layer. Formed,
The first impurity diffusion layer and the second impurity diffusion layer are formed so that the second impurity diffusion layer is separated from the first impurity diffusion layer by a certain distance all over the SiC semiconductor substrate.
A method for manufacturing a semiconductor device.   The first impurity diffusion layer and the second impurity diffusion layer are simultaneously formed by ion implantation using a single mask having openings corresponding to the first impurity diffusion layer and the second impurity diffusion layer. Item 7. A method for manufacturing a semiconductor device according to Item 6.   The method of manufacturing a semiconductor device according to claim 6, wherein the step of forming the source diffusion region and the step of forming the second impurity diffusion layer are performed by separate ion implantation steps.

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