JP5908497B2 - シリコンをベースとする光電子増倍管のセルの製造方法、シリコンをベースとする光電子倍増管の製造方法、および放射線検出器の製造方法 - Google Patents
シリコンをベースとする光電子増倍管のセルの製造方法、シリコンをベースとする光電子倍増管の製造方法、および放射線検出器の製造方法 Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 44
- 229910052710 silicon Inorganic materials 0.000 title claims description 44
- 239000010703 silicon Substances 0.000 title claims description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 230000005855 radiation Effects 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims description 60
- 239000000463 material Substances 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 22
- 238000005468 ion implantation Methods 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000010521 absorption reaction Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 238000002513 implantation Methods 0.000 claims description 4
- 150000002736 metal compounds Chemical class 0.000 claims description 3
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000005433 particle physics related processes and functions Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005658 nuclear physics Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002600 positron emission tomography Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2006—Measuring radiation intensity with scintillation detectors using a combination of a scintillator and photodetector which measures the means radiation intensity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- Power Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- High Energy & Nuclear Physics (AREA)
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- Light Receiving Elements (AREA)
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Description
Claims (6)
- シリコンをベースとする光電子増倍管のセルを製造する方法であって、
第2の導電型の基板を形成するステップと、
第1の導電型の第1の層と第2の導電型の第2の層とを形成するステップと、
を含んでおり、
前記第1の層と前記第2の層とが第1のpn接合部を形成し、
前記方法は、
前記基板の裏面を、1013〜1015cm-2の範囲内のイオン線量と1MeV〜10MeVの範囲内のイオンエネルギとを有するイオン注入ステップであって、注入によって結晶格子の損傷が引き起こされることにより1000nmの波長の光の吸収長が減少するイオン注入ステップによって処理するステップと、
前記基板の裏面の上に材料層を形成するステップであって、前記基板と前記材料層との間の界面に入射する1000nmの波長の光の反射率が25%より小さいように、前記材料層の材料が選択されるステップと、
をさらに含んでいる方法。 - 前記材料層の前記材料が、金属、金属化合物、金属合金、または半導体、のうちの1種類または複数種類を含んでいる、
請求項1に記載の方法。 - 前記基板(21)に、1019〜1020cm-3の範囲内のドーピング濃度が設けられる、
請求項1に記載の方法。 - 前記基板の内側から入射する光を捕捉する、または拡散させるための、複数の凹部、溝、窪みからなる構造を、前記基板の裏面に作製するステップ、
をさらに含んでいる、請求項1から請求項3のいずれか1項に記載の方法。 - シリコンをベースとする光電子増倍管を製造する方法であって、
請求項1から請求項4のいずれか1項に記載の方法により製造された複数のセル(1)を、1つの共通の基板(21)の上に作製するステップを含む、
方法。 - 放射線検出器(40)を製造する方法であって、
シンチレータ(41)を用意するステップと、
受け取った放射線に応えて前記シンチレータ(41)によって生成される光のバーストを受け取るように、請求項5に記載の方法により製造された光電子増倍管のアレイを配置するステップと、
を含む方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2010/007833 WO2012083983A1 (en) | 2010-12-21 | 2010-12-21 | Silicon photoelectric multiplier with optical cross-talk suppression due to special properties of the substrate |
Publications (2)
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JP2014507784A JP2014507784A (ja) | 2014-03-27 |
JP5908497B2 true JP5908497B2 (ja) | 2016-04-26 |
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JP2013545057A Active JP5908497B2 (ja) | 2010-12-21 | 2010-12-21 | シリコンをベースとする光電子増倍管のセルの製造方法、シリコンをベースとする光電子倍増管の製造方法、および放射線検出器の製造方法 |
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Country | Link |
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US (1) | US9209329B2 (ja) |
EP (1) | EP2656400B1 (ja) |
JP (1) | JP5908497B2 (ja) |
CA (1) | CA2821578C (ja) |
WO (1) | WO2012083983A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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EP2793273B1 (en) | 2013-04-17 | 2016-12-28 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Silicon photomultiplier with very low optical cross-talk and improved readout |
US11676220B2 (en) * | 2018-04-20 | 2023-06-13 | Meta Platforms, Inc. | Processing multimodal user input for assistant systems |
US11715042B1 (en) | 2018-04-20 | 2023-08-01 | Meta Platforms Technologies, Llc | Interpretability of deep reinforcement learning models in assistant systems |
US11886473B2 (en) | 2018-04-20 | 2024-01-30 | Meta Platforms, Inc. | Intent identification for agent matching by assistant systems |
US11307880B2 (en) | 2018-04-20 | 2022-04-19 | Meta Platforms, Inc. | Assisting users with personalized and contextual communication content |
US10782986B2 (en) | 2018-04-20 | 2020-09-22 | Facebook, Inc. | Assisting users with personalized and contextual communication content |
KR102473706B1 (ko) * | 2018-04-30 | 2022-12-05 | 한국전자통신연구원 | 포토멀티플라이어 및 그 제조방법 |
CN112433137A (zh) * | 2020-11-10 | 2021-03-02 | 西安工程大学 | 硅光电倍增管的PDE和Pct空间二维分布的测量方法 |
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JPS6173369A (ja) * | 1984-09-17 | 1986-04-15 | Mitsubishi Electric Corp | 赤外線検出素子 |
US5449945A (en) * | 1993-01-15 | 1995-09-12 | The United States Of America As Represented By The U.S. Department Of Energy | Silicon metal-semiconductor-metal photodetector |
US7620330B2 (en) * | 2003-06-05 | 2009-11-17 | Tom Faska | Optical receiver device and method |
RU2290721C2 (ru) * | 2004-05-05 | 2006-12-27 | Борис Анатольевич Долгошеин | Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя |
US7635848B2 (en) * | 2005-04-01 | 2009-12-22 | San Diego State University Research Foundation | Edge-on SAR scintillator devices and systems for enhanced SPECT, PET, and compton gamma cameras |
CN104538459A (zh) * | 2006-04-25 | 2015-04-22 | 皇家飞利浦电子股份有限公司 | 采用(bi) cmos工艺的雪崩光电二极管的实现 |
US7667400B1 (en) * | 2006-06-09 | 2010-02-23 | Array Optronix, Inc. | Back-illuminated Si photomultipliers: structure and fabrication methods |
US8279411B2 (en) * | 2008-08-27 | 2012-10-02 | The Boeing Company | Systems and methods for reducing crosstalk in an avalanche photodiode detector array |
US8679959B2 (en) * | 2008-09-03 | 2014-03-25 | Sionyx, Inc. | High sensitivity photodetectors, imaging arrays, and high efficiency photovoltaic devices produced using ion implantation and femtosecond laser irradiation |
JP2010283271A (ja) * | 2009-06-08 | 2010-12-16 | Panasonic Corp | 固体撮像素子及び撮像装置 |
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2010
- 2010-12-21 CA CA2821578A patent/CA2821578C/en not_active Expired - Fee Related
- 2010-12-21 EP EP10798269.6A patent/EP2656400B1/en not_active Not-in-force
- 2010-12-21 WO PCT/EP2010/007833 patent/WO2012083983A1/en active Application Filing
- 2010-12-21 JP JP2013545057A patent/JP5908497B2/ja active Active
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2013
- 2013-06-21 US US13/923,687 patent/US9209329B2/en active Active
Also Published As
Publication number | Publication date |
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EP2656400A1 (en) | 2013-10-30 |
US20130277564A1 (en) | 2013-10-24 |
CA2821578C (en) | 2016-03-22 |
CA2821578A1 (en) | 2012-06-28 |
WO2012083983A1 (en) | 2012-06-28 |
JP2014507784A (ja) | 2014-03-27 |
US9209329B2 (en) | 2015-12-08 |
EP2656400B1 (en) | 2017-05-31 |
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