JP5898969B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5898969B2 JP5898969B2 JP2012008289A JP2012008289A JP5898969B2 JP 5898969 B2 JP5898969 B2 JP 5898969B2 JP 2012008289 A JP2012008289 A JP 2012008289A JP 2012008289 A JP2012008289 A JP 2012008289A JP 5898969 B2 JP5898969 B2 JP 5898969B2
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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Description
以下、図面を参照しながら本実施の形態の半導体装置の構造と製造方法について詳細に説明する。
図1は、本実施の形態の半導体装置の概略を示す斜視図である。本実施の形態の半導体装置は、生体関連物質検出用の半導体装置(イオン物質検出用TFT(Thin Film Transistor)、生体関連物質検出用TFT、分析用TFT、分析・検出用半導体センサ、バイオセンサ)である。ここでは、生体関連物質としてDNAを例に説明する。
図2は、本実施の形態の半導体装置のポア部近傍の構成を示す斜視図および断面図である。図示するように、ポアPの内部には、DNA200が通過する。DNAは、4種のヌクレオチド(dAMP、dCMP、dGMP、dTMP)が配列した構成を有する。ヌクレオチドは、ヌクレオシドにリン酸基が結合した物質である。ヌクレオシドは五単糖の1位にプリン塩基またはピリミジン塩基がグリコシド結合したものである。上記4文字の略号の、1文字目は糖の種類(リボヌクレオチド(r)か、デオキシリボヌクレオチド(d)か)を、2文字目は塩基の種類を、3文字目は結合するリン酸基の数(mono 1、di 2、tri 3)を、4文字目はリン酸塩(P)であることを示す。塩基の種類のうち、“G”は、グアニン(guanine;2-アミノ-6-オキソプリン)、“A”は、アデニン(adenine;6-アミノプリン)、“T”は、チミン(thymine;5-メチルウラシル)、“C”は、シトシン(cytosine;2-ヒドロキシ-6-アミノピリミジン)である。
以下に、上記半導体装置(図1、図2参照)におけるDNAのヌクレオチド配列の解析動作の一例をシミュレーションに基づき説明する。
次いで、図7〜図39を参照しながら、本実施の形態の半導体装置の製造方法を説明するとともに、当該半導体装置の構成をより明確にする。図7〜図39は、本実施の形態の半導体装置の製造工程を示す要部断面図または要部平面図である。断面図は、平面図のA−A’またはB−B’断面に対応する。
実施の形態1のポアPの配置位置の変形例について本実施の形態において説明する。
図41は、本実施の形態の半導体装置の変形例1の構成を示す斜視図および平面図である。図41(A)は、斜視図、図41(B)は、平面図である。図41に示すように、変形例1においては、チャネル領域CHの側面xz1と絶縁膜(酸化シリコン膜IL1a)との境界部にポアPが配置されている。例えば、ポアPの半分がチャネル領域CHの側面xz1内に配置され、他の半分が絶縁膜(酸化シリコン膜IL1a)中に配置されるように、ポアPを配置する。その他の構成は、実施の形態1と同様であるためその詳細な説明を省略する。
図42は、本実施の形態の半導体装置の変形例2の構成を示す斜視図および平面図である。図42(A)は、斜視図、図42(B)は、平面図である。図42に示すように、変形例2においては、チャネル領域CHの側面xz1の内側にポアPが配置されている。例えば、ポアPを、チャネル領域CHの内部に、ポアPの端部がチャネル領域CHの側面xz1と接するように配置する。その他の構成は、実施の形態1と同様であるためその詳細な説明を省略する。
実施の形態1のチャネル領域CH、ゲート電極G、バックゲート電極BGおよび半導体膜112SDの形状の変形例について本実施の形態において説明する。
図43は、本実施の形態の半導体装置の変形例Aの構成を示す斜視図および平面図である。図43(A)は、斜視図、図43(B)は、平面図である。
図44は、本実施の形態の半導体装置の変形例Bの構成を示す斜視図および平面図である。図44(A)は、斜視図、図44(B)は、平面図である。
図45は、本実施の形態の半導体装置の変形例Cの構成を示す斜視図および平面図である。図45(A)は、斜視図、図45(B)は、平面図である。
図46は、本実施の形態の半導体装置の変形例Dの構成を示す斜視図および平面図である。図46(A)は、斜視図、図46(B)は、平面図である。
図47は、本実施の形態の半導体装置の変形例Eの構成を示す斜視図および平面図である。図47(A)は、斜視図、図47(B)は、平面図である。
以下、図面を参照しながら本実施の形態の半導体装置の構造と製造方法について詳細に説明する。
実施の形態1(図29)においては、チャネル領域CHの側面とゲート電極Gとの間に位置するゲート絶縁膜を酸化シリコン膜IL1aで構成したが、このゲート絶縁膜を高誘電率膜で構成してもよい。
実施の形態1においては、ポアPの内部に、被検査物として、DNA200自体を通過させることにより検査(解析)を行った(図2参照)が、被検査物は、図2に示す形態のものに限定されるものではなく、種々の変形が可能である。この場合、被検査物の大きさに応じて適宜ポアPの径(直径)を調整すればよい。図57は、本実施の形態の半導体装置の概略を示す斜視図である。
本実施の形態においては、チャネル領域CHの構成材料またはポアP部の構成材料について説明する。
上記実施の形態1〜7で説明した半導体装置(例えば、生体関連物質検出用の半導体装置)の適用箇所に制限はないが、以下に示す、生体関連物質検出用のシステムに組み込むことができる。図59〜図63は、本実施の形態のシステムの構成の概略を示すブロック図である。
103 素子分離絶縁膜
108 支持基板
109 窒化シリコン膜
110 酸化シリコン膜
111 半導体膜
111BG 半導体膜
111CG 半導体膜
111FG 半導体膜
111G 半導体膜
112 半導体膜
112BG 半導体膜
112CG 半導体膜
112FG 半導体膜
112G 半導体膜
112SD 半導体膜
112a 突出部
113 酸化シリコン膜
117 ハードマスク
200 DNA
210 ビーズ
400 生体膜
600 ボード
601 アレイ部
603 信号処理回路部
701 アレイ部
703 信号処理回路部
BG バックゲート電極
C1 コンタクトホール
C2 コンタクトホール
CG 制御ゲート電極
CH チャネル領域
CH1〜CHn 半導体チップ
CHA 半導体チップ
Ca1 容量
Ca2 容量
DT Siドット
EL1、EL2 電極
FG 浮遊ゲート電極
G ゲート電極
GR 溝
HK 高誘電率膜
IL1 層間絶縁膜
IL1a 酸化シリコン膜
IL1b 窒化シリコン膜
IL1c 酸化シリコン膜
IL1d 窒化シリコン膜
IL2 層間絶縁膜
LK1 低誘電率膜
LK2 低誘電率膜
M1 第1層配線
OA 開口部
P ポア
P1 第1プラグ
SD ソース、ドレイン領域
Z 絶縁膜
xz1 側面
Claims (12)
- 絶縁層の第1面上に配置された第1半導体膜と、
前記第1半導体膜の両側に配置されたソース、ドレイン領域と、
前記第1面上に、前記第1半導体膜と離間して配置され、前記第1半導体膜の第1側面と対向するように配置されたゲート電極と、
前記第1半導体膜と前記ゲート電極との間に位置する第1絶縁膜と、
前記第1半導体膜の前記第1側面に沿って、前記第1面と交差するように配置された孔と、
を有し、
前記ゲート電極へ電圧を印加することで前記第1半導体膜の前記第1側面に電流パスを形成し、前記孔には、被検査物が導入され、前記電流パスに対する前記被検査物による電界の変化を前記ソース、ドレイン領域間に流れる電流の変化として検出する半導体装置。 - 前記孔は、前記第1絶縁膜中に設けられている請求項1記載の半導体装置。
- 前記孔は、前記第1半導体膜と前記第1絶縁膜との境界部に設けられている請求項1記載の半導体装置。
- 前記孔は、前記第1半導体膜中に設けられている請求項1記載の半導体装置。
- 前記第1面上に、前記第1半導体膜と離間して配置され、前記第1半導体膜の第2側面と対向するように配置されたバックゲート電極を有する請求項1記載の半導体装置。
- 前記ゲート電極は、第2半導体膜と、前記第2半導体膜上に位置する第3半導体膜とを有し、
前記第3半導体膜は、前記第2半導体膜上から、前記第2半導体膜の前記第1半導体膜側の側面を覆い、前記絶縁層の上面にかけて形成されるように配置されている請求項1記載の半導体装置。 - 前記ゲート電極の前記絶縁層上に形成されている部位の先端部の上面から見た平面形状は、三角形状である請求項6記載の半導体装置。
- 前記第1絶縁膜は、前記絶縁層より高誘電率の膜である請求項1記載の半導体装置。
- 前記被検査物は、検査対象物を担持させた物質である請求項1記載の半導体装置。
- 前記孔の近傍に設けられた生体膜を有する請求項1記載の半導体装置。
- 前記孔の直径は、5nm以下である請求項1記載の半導体装置。
- 前記第1半導体膜の膜厚は、5nm以下である請求項1記載の半導体装置。
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