JP5886025B2 - Ｒｆ電力増幅器およびその動作方法 - Google Patents

Ｒｆ電力増幅器およびその動作方法 Download PDF

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Publication number
JP5886025B2
JP5886025B2 JP2011277953A JP2011277953A JP5886025B2 JP 5886025 B2 JP5886025 B2 JP 5886025B2 JP 2011277953 A JP2011277953 A JP 2011277953A JP 2011277953 A JP2011277953 A JP 2011277953A JP 5886025 B2 JP5886025 B2 JP 5886025B2
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Japan
Prior art keywords
circuit
band
signal
power
output
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Expired - Fee Related
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JP2011277953A
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English (en)
Japanese (ja)
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JP2013131803A (ja
JP2013131803A5 (enExample
Inventor
昌俊 長谷
昌俊 長谷
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Renesas Electronics Corp
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Renesas Electronics Corp
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Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2011277953A priority Critical patent/JP5886025B2/ja
Priority to US13/705,328 priority patent/US8970299B2/en
Publication of JP2013131803A publication Critical patent/JP2013131803A/ja
Publication of JP2013131803A5 publication Critical patent/JP2013131803A5/ja
Priority to US14/604,944 priority patent/US9143097B2/en
Application granted granted Critical
Publication of JP5886025B2 publication Critical patent/JP5886025B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191—Tuned amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/66—Amplifiers simultaneously generating oscillations of one frequency and amplifying signals of another frequency
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/204—A hybrid coupler being used at the output of an amplifier circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/465—Power sensing
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
JP2011277953A 2011-12-20 2011-12-20 Ｒｆ電力増幅器およびその動作方法 Expired - Fee Related JP5886025B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011277953A JP5886025B2 (ja) 2011-12-20 2011-12-20 Ｒｆ電力増幅器およびその動作方法
US13/705,328 US8970299B2 (en) 2011-12-20 2012-12-05 RF power amplifier and operating method thereof
US14/604,944 US9143097B2 (en) 2011-12-20 2015-01-26 RF power amplifier and operating method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011277953A JP5886025B2 (ja) 2011-12-20 2011-12-20 Ｒｆ電力増幅器およびその動作方法

Publications (3)

Publication Number Publication Date
JP2013131803A JP2013131803A (ja) 2013-07-04
JP2013131803A5 JP2013131803A5 (enExample) 2013-08-15
JP5886025B2 true JP5886025B2 (ja) 2016-03-16

Family

ID=48609533

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011277953A Expired - Fee Related JP5886025B2 (ja) 2011-12-20 2011-12-20 Ｒｆ電力増幅器およびその動作方法

Country Status (2)

Country Link
US (2) US8970299B2 (enExample)
JP (1) JP5886025B2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9024836B2 (en) * 2011-10-21 2015-05-05 Htc Corporation Electronic device for processing radio frequency signals and matching circuit for providing variable impedance
JP5897529B2 (ja) * 2013-03-07 2016-03-30 株式会社東芝 電力増幅装置及び送信機
CN103762492B (zh) * 2013-12-31 2016-03-02 北京长峰广播通讯设备有限责任公司 可适应变阻抗激光器的射频信号调整方法及射频功率源
US9391567B2 (en) 2014-06-16 2016-07-12 Skyworks Solutions, Inc. Apparatus and methods for power amplifier output matching
JP2016058773A (ja) * 2014-09-05 2016-04-21 ルネサスエレクトロニクス株式会社 半導体装置及び無線通信装置
US9978732B2 (en) * 2014-09-30 2018-05-22 Skyworks Solutions, Inc. Network with integrated passive device and conductive trace in packaging substrate and related modules and devices
US10418951B2 (en) * 2015-03-24 2019-09-17 Skyworks Solutions, Inc. Combined output matching network and filter for power amplifier with concurrent functionality
US9979360B1 (en) * 2016-12-20 2018-05-22 Nxp Usa, Inc. Multi baseband termination components for RF power amplifier with enhanced video bandwidth
KR101883082B1 (ko) 2016-12-26 2018-07-27 삼성전기주식회사 파워 증폭기의 임피던스 매칭 회로
US11469711B2 (en) * 2019-06-04 2022-10-11 Murata Manufacturing Co., Ltd. Power amplifier circuit
US11469725B2 (en) * 2019-06-07 2022-10-11 Skyworks Solutions, Inc. Apparatus and methods for power amplifier output matching
US11817832B2 (en) 2020-01-03 2023-11-14 Skyworks Solutions, Inc. Power amplifier output matching
US11901921B2 (en) * 2020-11-02 2024-02-13 Nokia Solutions And Networks Oy Radio apparatus
TWI796918B (zh) * 2021-12-30 2023-03-21 台達電子工業股份有限公司 功率偵測電路以及控制電路
CN116430111B (zh) 2021-12-30 2025-12-05 台达电子工业股份有限公司 功率检测电路以及控制电路
CN119095067B (zh) * 2024-08-22 2025-09-19 中国电子科技集团公司第十研究所 一种机载WiFi系统功放组件及其设计方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07227003A (ja) * 1993-12-15 1995-08-22 Fuji Electric Co Ltd 移動体の無接触給電装置
FI102121B1 (fi) * 1995-04-07 1998-10-15 Lk Products Oy Radiotietoliikenteen lähetin/vastaanotin
JP3394401B2 (ja) 1996-11-22 2003-04-07 ティーディーケイ株式会社 ローパスフィルタ
JP3892725B2 (ja) * 1999-07-09 2007-03-14 ノキア コーポレイション 電力用デバイスのｖｇｓドリフト及び熱補償のためのバイアス回路
US6307364B1 (en) 1999-08-27 2001-10-23 Rf Micro Devices, Inc. Power sensor for RF power amplifier
US6577199B2 (en) * 2000-12-07 2003-06-10 Ericsson, Inc. Harmonic matching network for a saturated amplifier
JP2003318750A (ja) * 2002-04-26 2003-11-07 Kenwood Corp 無線送信装置
US20070016135A1 (en) * 2005-07-18 2007-01-18 Kanner Rowland W Side loading needle depth stop
US20070161357A1 (en) * 2006-01-12 2007-07-12 Sony Ericsson Mobile Communications Ab Multiband antenna switch
US8099127B2 (en) * 2008-08-01 2012-01-17 Qualcomm Incorporated Multi-mode configurable transmitter circuit

Also Published As

Publication number Publication date
US8970299B2 (en) 2015-03-03
JP2013131803A (ja) 2013-07-04
US9143097B2 (en) 2015-09-22
US20130154735A1 (en) 2013-06-20
US20150137894A1 (en) 2015-05-21

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