JP5870616B2 - MEMS switch and manufacturing method thereof - Google Patents

Description

The present invention, MEMS (m icro e lectro m echanical s ystem) for the switch and a manufacturing method thereof. An electromechanical member having a component with dimensions shorter than mm order is called MEMS.

  Silicon processing technology is highly developed with advances in integrated circuits and is suitable for MEMS fabrication. An SOI substrate in which an active Si layer is bonded using a silicon oxide film as an adhesive film (bonding oxide film BOX film) on a supporting Si substrate can reduce the active Si layer and form a dielectric-isolated high-performance Si element. In addition, the silicon oxide film can be selectively removed with dilute hydrofluoric acid or the like and can be used for manufacturing a MEMS having a movable part. In general, an SOI substrate is manufactured by thermally oxidizing at least one of a pair of Si substrates and thermocompression bonding the pair of Si substrates through a silicon oxide film.

  In order to meet the demand for miniaturization and high performance of radio frequency (RF) parts such as cellular phones, research and development of RF signal change-over switches using MEMS technology have been actively conducted. The MEMS switch is a mechanical switch, can reduce parasitic capacitance, has less loss, has higher insulation, and has better signal distortion characteristics than a switch using a semiconductor element.

  A flexible beam can be formed by patterning the active silicon layer of the SOI substrate into a beam shape and etching away the BOX film below the beam. The flexible beam can be formed in the form of a cantilever beam or a cantilever beam. A movable electrode having a movable contact on the upper surface on the flexible beam, a fixed electrode extending above and having a fixed contact on the lower surface, and a switch can be formed if the flexible beam can be deformed upward. it can. As means for deforming the flexible beam upward, a method using a piezoelectric member, a method using an electrostatic drive electrode, and the like are known.

  Japanese Patent Laid-Open No. 2006-261515 forms a switch by forming a movable contact electrode having both ends as contacts at the tip of a cantilever, and forming a pair of fixed contact electrodes extending above the movable contact electrode from fixed portions on both sides. In addition, a piezoelectric drive unit in which a lower electrode, a piezoelectric material layer, and an upper electrode are stacked is formed in a region from the base part of the cantilever to an intermediate position, and a groove is formed in the cantilever (active Si layer) around the piezoelectric drive unit. Propose to form.

  A switch can be formed by forming a movable contact on a flexible beam, disposing a fixed contact above the gap via a gap, and forming a structure that allows the movable contact and the fixed contact to contact each other. For example, an RF-MEMS switch can be formed by a movable contact formed on a cantilever and a bridge-shaped fixed electrode formed so as to straddle the movable contact.

  When the movable electrode and the fixed electrode are opposed to each other and a voltage is applied between the opposed electrodes, a driving force can be obtained by electrostatic attraction. A structure in which an electrostatic drive structure is formed by opposing electrodes and a cantilever is driven by electrostatic drive is known.

  Japanese Patent Laid-Open No. 2007-196303 provides a movable electrode for a switch at the tip of a cantilever, a movable electrostatic drive electrode at the middle of the cantilever, a pair of fixed switch electrodes above the movable electrode for switches, and a bridge above the movable electrostatic drive electrode When a suitable fixed drive voltage is applied to the opposing electrostatic drive electrode, a cantilever is formed by the electrostatic attraction generated between the movable electrostatic drive electrode and the bridge-like fixed electrostatic drive electrode. Discloses a microswitch in which the cantilever returns to its original state and the contact point returns to its original state by elasticity when the switch movable electrode is closed between a pair of fixed switch electrodes and the drive voltage is turned off. ing. Hereinafter, the drawings of the publication will be restored and described.

  6A is a plan view showing a state in which a lower electrode is formed on the surface of the SOI substrate, FIG. 6B is a plan view showing a state in which an upper electrode structure overhanging the lower electrode is formed, and FIG. 6C is a ZC in FIG. 6B. It is sectional drawing which follows the -ZC line. For convenience of illustration, the left and right sides of FIG. 6C are reversed.

  As shown in FIG. 6C, the SOI substrate has a structure in which an active silicon layer AL is coupled to a supporting silicon substrate SS via a bonding oxide (silicon oxide) film BOX. The active silicon layer AL has a high resistivity of 1000 Ω · cm or more. The thickness of the active silicon layer AL is, for example, 5 μm to 20 μm, and the thickness of the bonding oxide film BOX is, for example, 2 μm to 4 μm. The supporting silicon substrate SS is supplied with a thickness of 400 μm to 600 μm. The supporting silicon substrate SS is a member for providing physical support, and the supporting silicon substrate SS can be thinly processed as necessary.

  As shown in FIG. 6A, the lower electrode including the movable contact electrode MCE and the movable drive electrode MDE is formed on the active silicon layer AL. A movable portion of a cantilever CL is defined by a slit SL penetrating the active silicon layer AL. In this state, the bonding oxide film BOX below the movable portion has not been removed yet.

  The width of the slit SL is, for example, 1.5 μm to 2.5 μm, and the length of the cantilever CL is, for example, 700 μm to 1000 μm. The tip and middle portions of the cantilever CL are patterned broadly, and the movable contact electrode MCE and the movable drive electrode MDE are formed thereon. The width of the tip of the cantilever is 100 μm to 200 μm. The movable drive electrode MDE is drawn downward in the figure to define a connection region. These movable electrodes MCE and MDE are formed by stacking, for example, a Cr layer having a thickness of 50 nm and an Au layer having a thickness of 500 nm. The electrode can be patterned by lift-off or etching (milling) using a resist pattern.

  The upper electrode structure is a fixed electrode that is supported by a fixed part outside the movable part and has a shape extending above the lower electrode of the movable part. After the slit SL is formed, a sacrificial film is formed on the active silicon layer AL so as to cover the movable electrode, and the sacrificial film is patterned to form a plated bottom structure. A plating base film is formed on the plating bottom structure, a resist pattern is formed thereon, a region for forming the plating layer is defined, and then the exposed plating base film is subjected to electrolytic plating. A fixed electrode defined by the plated bottom structure and the resist pattern is formed. The sacrificial film can be formed of a silicon oxide film, for example. The plating base film is formed, for example, by stacking a Cr adhesion film having a thickness of 50 nm and an Au seed layer having a thickness of 500 nm. The plating layer is, for example, electrolytically plated with gold.

  After the plating is completed, the resist pattern is removed, and the exposed plating base film is removed. The exposed sacrificial film is removed with buffered hydrofluoric acid or the like, and then the bonding oxide film BOX under the cantilever is removed by etching through the slit. The cantilever becomes movable. When the sacrificial film is removed, the plating base Cr film of the plating layer formed thereon is exposed. In order to make the fixed contact the Au surface, the exposed plating base Cr film is further removed.

  As shown in FIG. 6B, a pair of fixed contact electrodes FCE extending above the movable contact electrode MCE, and a bridge type fixed drive electrode FDE are formed above the movable drive electrode MDE. The pair of fixed contact electrodes FCE is connected to a high frequency RF signal line, and constitutes a high frequency switch for turning on / off the high frequency signal.

  FIG. 6C shows a cross section taken along the line ZC-ZC in FIG. 6B and shows a spaced-apart relationship between the movable electrode and the fixed electrode. For example, when the fixed drive electrode FDE is grounded and a predetermined potential is applied to the movable drive electrode MDE, an electrostatic attractive force is generated, and the cantilever CL is displaced upward. Along with the cantilever CL, the movable contact electrode MCE is displaced upward to connect the pair of fixed contact electrodes FCE.

  A sticking phenomenon in which the movable electrode sticks to the fixed electrode is also known. Sticking is more likely to occur as the spring constant of the flexible beam on which the movable electrode is placed is weaker. On the other hand, reduction of the drive voltage of the switch is desired. In order to reduce the drive voltage of the switch, it is desired to lower the spring constant of the flexible beam or to narrow the movable range.

JP 2006-261515 A JP 2007-196303 A

  In order to reduce the drive voltage of the switch, a prototype MEMS switch with a reduced distance between the contacts produced problems such as a short circuit between the drive electrodes and an increase in the resistance between the contacts.

According to one embodiment, the MEMS switch includes an SOI substrate having an active Si layer bonded to a supporting Si substrate via a bonding oxide film, and the active Si layer, and one or both ends are bonded and oxidized. A flexible beam structure having a movable part supported by the supporting Si substrate through a film , wherein no bonding oxide film is disposed below the movable part, and a cavity is formed between the supporting Si substrate and the supporting Si substrate. A flexible beam structure for defining the movable beam structure; a movable drive electrode formed on the flexible beam structure; a movable contact electrode having a movable contact contact formed on the flexible beam structure; A fixed drive electrode that is supported on a first set of fixed parts including a stack of the bonding oxide film and the active Si layer located on both sides and extends above the movable drive electrode; and on both sides of the flexible beam structure Be located A fixed contact electrode supported by a second set of fixed portions including a stack of the bonding oxide film and the active Si layer and having a fixed contact contact above the movable contact contact; the flexible beam structure; and the fixed drive. electrode, said surrounding the fixed contact electrodes, a ground wiring formed on the active Si layer, the inside of the ground wire, the flexible beam structure, said first and second sets of regions other than the fixed portion The fixed drive electrode and the fixed contact electrode are in close contact with Mo or Mo alloy above the first set and the second set of fixed portions. Includes a metal layer, a seed layer of Au or Au alloy formed on the adhesion metal layer, a plating layer of Au or Au alloy formed on the seed layer, a movable drive electrode, a movable contact contact and a gap In a free lower surface facing through, Mo or absent adhesion metal layer of Mo alloy, on the seed layer, plating layer is present.

1A is a cross-sectional view of an SOI substrate, and FIGS. 1B and 1C are a plan view and cross-sectional views showing a process of forming a cavity CV by forming a through hole TH in an active Si layer AL and etching a bonding oxide film BOX below. 1D is a cross-sectional view showing a step of electrolytically plating the plated layer PL on the shaped sacrificial film SF via the adhesion metal layer AM and the plating seed layer SD, and FIGS. 1E, 1F, and 1G are MEMS according to the first embodiment. It is sectional drawing in alignment with the length direction of a switch, a top view in the state where a lower electrode was formed, and a sectional view in the state where an electrostatic drive mechanism and a switch mechanism were formed. 1H is a plan view of the MEMS switch according to the first embodiment, and FIGS. 1I, 1J, and 1K are cross-sectional views taken along the lines X1-X1, X2-X2, and X3-X3 of the MEMS switch according to the first embodiment. It is. 2XA-2XF are cross-sectional views along the X direction showing the manufacturing process of the MEMS switch according to the first embodiment. 2XG-2XJ are cross-sectional views along the X direction showing the manufacturing process of the MEMS switch according to the first embodiment. 2XK-2XN are cross-sectional views along the X direction showing the manufacturing process of the MEMS switch according to the first embodiment. 2YA-2YD are cross-sectional views along the Y direction showing the manufacturing process of the MEMS switch according to the first embodiment. 2ZA-2ZD are plan views showing the manufacturing process of the MEMS switch according to the first embodiment. 3A, 3B, and 3C are a plan view of a MEMS switch according to a comparative example, a cross-sectional view taken along line XX, and a cross-sectional view taken along line YY. 4XA, 4XB, 4XC, and 4XD are cross-sectional views along the line XX showing the manufacturing process of the MEMS switch according to the comparative example. It is a top view which shows the MEMS switch by a 2nd Example. 6A, 6B, and 6C are plan views showing a state in which electrodes are formed on the surface of a known SOI substrate, a plan view showing a state in which a three-dimensional electrode structure is formed on the surface of the SOI substrate, and a ZC-ZC line in FIG. 6B. FIG.

  Hereinafter, description will be given with reference to the drawings.

  FIG. 1A is a cross-sectional view illustrating a configuration of an SOI substrate. The SOI substrate has a resistivity of 1000 Ωcm or more, a thickness of 10 μm to 20 μm, for example, a (100) active Si layer AL having a thickness of 15 μm, and a bonding oxide film (thermal oxide film) BOX having a thickness of 2 μm to 30 μm, for example, 4 μm. Are bonded onto a Si support substrate SS having a thickness of 300 μm to 700 μm, for example, 525 μm. The dimension of the SOI chip forming the MEMS switch is, for example, about 500 to 800 μm × 600 to 900 μm.

As shown in FIG. 1B, through holes TH having a width of about 2 μm and a length of about 6 μm, for example, are formed in the active Si layer AL at a predetermined pitch using deep RIE (reactive ion etching) using SF ₆ gas. The thermal oxide film BOX is exposed on the bottom surface of the hole TH.

  As shown in FIG. 1C, when the SOI substrate is immersed in a dilute hydrofluoric acid etching solution, the etching solution enters from the through hole TH formed in the active Si layer, and the thermal oxide film BOX is removed by etching. In this way, the thermal oxide film in the desired region can be removed. The dimension of the through hole is selected so that the structure formed on the active Si layer AL can perform a predetermined function. For example, even if a plurality of openings having a width of 2 μm are distributed in a wiring having a width of 50 μm, it is easy to perform the wiring function.

  FIG. 1D shows the function of the sacrificial layer SF for forming a three-dimensional structure on the active Si layer AL. The sacrificial layer SF is formed of a silicon oxide film deposited by, for example, chemical vapor deposition (CVD). If necessary, the surface of the sacrificial layer SF is planarized by chemical mechanical polishing (CMP), a resist pattern having an opening of a predetermined shape is formed on the surface, and the sacrificial layer SF exposed in the opening is controlled to a predetermined depth and time. Dig down with control etching by. Change the resist pattern and continue processing from shallow recess to deep recess. The portion from which the entire thickness of the sacrificial film SF is removed becomes a support portion that is bonded to the base.

  In order to perform electrolytic plating, a power feeding layer is necessary. When a gold (Au) plating layer, for example, is formed on a sacrificial layer SF of an insulating material such as silicon oxide, an adhesion metal layer AM having high adhesion to an insulating layer such as Cr or Mo is usually used, and Au is used as a base for gold plating. A seed layer SD is formed by sputtering or the like. The adhesion metal layer AM under the plating layer was made of Mo. After the seed layer SD is formed, a resist pattern RP that is thicker than the plating layer to be created and that defines the area to be plated is formed. Electroplating of Au or Au alloy is performed using the base metal layers AM and SD as a power feeding layer, and a plating layer PL is formed in a plating region defined by the resist pattern. The thickness of the plating layer to be created is, for example, about 20 μm. A plating layer PL having a three-dimensional structure can be formed. Thereafter, the resist pattern RP, the exposed base metal layers SD and AM, and the sacrificial layer SF are removed. Although the fixed electrode of the switch mechanism is illustrated, if the contact portion protruding downward from the bridge-shaped beam portion is replaced with a plate portion having a flat lower surface, the fixed electrode of the electrostatic drive mechanism is obtained.

  1E and 1F are a cross-sectional view and a plan view showing a flexible beam having a double-supported beam structure and its peripheral portion. FIG. 1G is a cross-sectional view showing the fixed drive electrode FDE, the support portion for the fixed contact electrode FCE, the drive mechanism DR, and the switch mechanism SW. The flexible beam FB is formed by patterning the active Si layer AL, and both ends thereof form an anchor structure ANC supported by the support silicon substrate SS via the silicon oxide layer BOX. In the region between the anchors ANC at both ends, the silicon oxide film BOX is removed and a cavity CV is formed. The active Si layer having a double-supported beam structure is in a completely insulated state because the adjacent active Si layer is removed from the entire circumference. The support portions of the fixed electrodes FDE and FCE have the same structure and are completely insulated.

  On the active Si layer AL, for example, a Ti adhesion metal layer AM1 having a thickness of 50 nm, for example, an Au lower layer wiring layer WM1 having a thickness of 500 nm is laminated by sputtering for the lower wiring. A resist pattern is formed on the lower wiring layer WM1 and patterned by removing the exposed portion by ion milling to form the movable contact electrode MCE, the movable drive electrode MDE, the wirings W1, W2, and the like. In the plating process for forming the fixed drive electrode FDE and the fixed contact electrode FCE, the pad PD (switch pad SPD, drive pad DPD) is formed on the end of the wiring, and the loop-shaped ground electrode GND is formed around the chip. The In the region between the flexible beam FB and the ground electrode GND, the active Si layer AL is removed to form the window portion WD.

  When the Mo adhesion metal layer AM2 below the Au plating layer PL is removed by etching, the adhesion metal layer AM1 is made of Ti having high selectivity in Mo wet etching so that the adhesion metal layer AM1 below the lower wiring layer is not damaged.

  1G, in the support portion shown on the left side, the Ti adhesion metal layer AM1, the Au lower wiring layer WM1, the Mo adhesion metal layer AM2, the Au seed layer SD, and the Au plating metal layer PL are laminated on the active Si layer AL. Yes. In the contact portion of the switch mechanism SW shown on the right side, a space is formed above the Au lower wiring layer WM1, the adhesion metal layer AM2 below the plating metal layer PL is removed, and the Au seed metal layer is exposed. In order to make a contact electrode of Au, the Mo adhesion metal layer AM2 having a high contact resistance is removed. Also in the drive mechanism DR shown in the center, a space is formed above the Au lower wiring layer WM1, and the adhesion metal layer AM2 below the plating metal layer PL is removed. It is a structure formed in the same process. In the cross-sectional view along the length direction of the flexible beam, only the hollow portion of the bridge-shaped fixed electrode is shown.

  FIG. 1H is a plan view of the MEMS switch chip. The active Si layer of the fixed portion having the flexible beam FB and the pad portions SPD and DPD at both ends thereof is patterned. A fixed drive electrode FDE and a fixed contact electrode FCE are formed so as to intersect the flexible beam FB, and supported on the Si support substrate SS via the active Si layer AL and the bonding oxide film BOX on both sides (upper and lower) of the movable beam FB. Has been. A ground wiring GND is formed around the chip. Inside the ground wiring GND, the active Si layer AL other than the flexible beam FB and the fixed electrode support portion is removed, and a window portion WD is formed.

1I, 1J, and 1K are cross-sectional views taken along lines X1-X1, X2-X2, and X3-X3 in FIG. 1H.
As shown in FIGS. 1I and 1J, the fixed electrodes FCE and FDE have a portion that intersects the flexible beam FB and extends above the flexible beam FB. The Mo adhesion metal layer AM2 is removed by wet etching from the lower surfaces of the fixed electrodes FCE and FDE facing the gap. As the etchant, “SLA etchant” made of Hayashi Junyaku Kogyo Co., Ltd. and made of a phosphoric acid acetic acid nitric acid solution was used.

As shown in FIG. 1K, the active Si layer AL in a region other than the flexible beam FB and the fixed electrodes FCE and FDE is removed inside the ground wiring GND. Removal of the active Si layer, as will be described later, for example, the etching of the slit group by deep RIE using SF ₆ gas, be performed by a combination of etching of narrow Si layer by RIE using SF ₆ gas it can.

  A manufacturing process of the MEMS switch according to the first embodiment described above will be described. 2XA to 2XN are cross-sectional views taken along line X3-X3 shown in FIGS. 1H and 1K, and FIGS. 2YA to 2YD are cross-sectional views taken along the length direction (YY direction) of the flexible beam. 2ZA to 2ZD are plan views.

  As shown in FIG. 2XA, an SOI substrate is prepared in which an active Si layer AL is bonded to a support Si layer SS via a bonding oxide film BOX. For example, the thickness of the active Si layer is 15 μm, the thickness of the oxide film BOX is 4 μm, and the thickness of the supporting Si substrate is 525 μm.

As shown in FIG. 2XB, through holes TH having a width of about 2 μm and a length of about 6 μm for oxide film etching are distributed at a predetermined pitch in the target region, and active Si is formed by deep RIE (Bosch process) using SF _6. It is formed through the layer AL. The surface of the oxide film BOX is exposed.

  FIG. 2ZA shows an example of arrangement of the through holes TH. In order to create a flexible portion in which the width of the left portion is wider than the width of the right portion, the through hole TH is arranged according to the shape of the flexible portion.

  As shown in FIG. 2XC, the substrate is immersed in a dilute hydrofluoric acid aqueous solution or the like, and the oxide film is etched. The oxide film is gradually etched by the dilute hydrofluoric acid aqueous solution that has entered from the through hole TH, and a cavity CV in a predetermined region is formed continuously with each other.

  As shown in FIG. 2ZB, a cavity CV having a predetermined shape is formed.

  As shown in FIG. 2XD, a 50-nm-thick Ti adhesion metal layer AM1 and a 500-nm-thick Au layer WM1 are sputtered to form a lower electrode layer. A resist pattern is formed on the lower electrode layer, and ion milling is performed to form a lower electrode LE having a predetermined pattern.

  FIG. 2ZC shows an example of the shape of the lower electrode LE to be formed. The drive electrode MDE and the switch electrode MCE are formed on the flexible beam, and the anchor ANC of the fixed electrode support portion is formed above and below the flexible beam.

As shown in FIG. 2XE, the slit SL that defines the flexible beam and the slit group SL for removing the active Si layer of the window portion WD are formed by deep RIE using SF ₆ .

  FIG. 2ZD is a plan view showing the distribution of the slit group SL. For example, a slit group having a width of 2 μm is formed through a 1 μm space.

  As shown in FIG. 2XF, a sacrificial film SF is formed on the active Si layer AL so as to cover the lower electrode LE. For example, a TEOS (tetraethoxysilane) oxide film is deposited to a thickness of 5 μm by CVD.

  As shown in FIG. 2XG, a recess having a predetermined shape is etched in the sacrificial film SF by a predetermined depth to form a recess that defines the lower surface shape of the plating layer. For example, etching with a depth of 4 μm, etching with a depth of 0.5 μm is performed on a selected region of the bottom surface, and etching with a depth of 0.5 μm (all remaining thickness) is performed on a selected region of the bottom surface. This figure shows the deepest hole that exposes the lower electrode and the shallowest recess that accommodates the fixed drive electrode.

  Referring to FIG. 2YA, the shallowest recess RC1 that defines the fixed driving electrode, the recess RC2 having an intermediate depth that defines the fixed contact, and the deepest recess RC3 that exposes the surface of the lower electrode LE are formed in the sacrificial film SF. ing.

  As shown in FIG. 2XH, a Mo second adhesion metal layer AM2 having a thickness of 50 nm and an Au seed layer SD having a thickness of 500 nm are formed by sputtering on the sacrificial film SF in which the recesses RC having different depths are formed. A conductive power feeding layer is also formed on the insulating sacrificial film SF, and adhesion is secured by the adhesion metal layer AM2.

  As shown in FIG. 2XI, a resist pattern RP that defines a plating region is formed on the Au seed layer SD. The Mo adhesion metal layer AM2 and the Au seed layer SD are used as a power supply layer, and Au electroplating is performed to form, for example, an Au plating layer PL having a thickness of 20 μm.

  FIG. 2YB shows this state in a cross section in the length direction of the flexible beam.

  As shown in FIG. 2XJ, the resist pattern RP is removed by ashing, a registry mover or the like, and the exposed seed layer SD and Mo adhesion metal layer AM2 are removed by ion milling or the like.

  As shown in FIG. 2XK, the exposed sacrificial film SF is removed with an etchant such as hydrofluoric acid vapor. The free lower surface of the fixed electrode is exposed. The contact point of the Au electrode is covered with the Mo layer, and the electrical characteristics are poor as it is.

As shown in FIG. 2XL, RIE using SF ₆ gas is performed to etch the active Si layer AL having a width of 1 μm. The region covered with the metal electrode is not etched.

  FIG. 2YC shows this state in a cross section in the length direction of the flexible beam. In the region where the slit group is formed, the active Si layer AL having a width of 1 μm between the slits is removed by etching from both sides. In the region where the slit group is not formed, the surface of the active Si layer AL is etched, but most of the thickness remains. Along with the active Si layer AL, the silicon oxide layer BOX is also etched. The silicon oxide layer BOX may be entirely etched or may remain partially.

  FIG. 2XM shows the state after the active Si layer AL etching. The active Si layer AL on both sides of the flexible beam FB is removed, and a window portion WD is formed.

  FIG. 2XN shows a step of etching away the second adhesion metal layer AM2 of Mo using “SLA etchant” made of Hayashi Junyaku Kogyo Co., Ltd. made of phosphoric acid acetic acid nitric acid solution. Wide window portions WD are formed on both sides of the flexible beam. Even if the distance between the fixed electrode and the movable electrode is reduced, the wide window WD is formed in the vicinity thereof, so that even a highly viscous liquid can be easily moved.

  FIG. 2YD shows this state in a cross section in the length direction of the flexible beam. In the state of FIG. 2YD, the movable upper electrode is arranged with a slight gap above the lower electrode on the active Si layer. However, before and after the drawing, as shown in FIG. 2XN, the active Si layer AL is removed.

  3A, 3B, and 3C are a plan view of a MEMS switch according to a comparative example, a cross-sectional view taken along line XX, and a cross-sectional view taken along line YY (flexible beam length direction). 1H corresponds to the plan view shown in FIG. 1H, the cross-sectional view taken along the line X3-X3 shown in FIG. 1K, and the layer cross-sectional view in the flexible beam length direction (Y-Y line) shown in FIG. 1E. The difference between the first embodiment and the comparative example is that the window portion WD is not formed in the comparative example.

  4XA-4XD are cross-sectional views along the line XX of FIG. 3A, showing the manufacturing process of the comparative example. Differences from the first embodiment will be mainly described. The steps shown in FIGS. 2XA-2XD are performed similarly. A cavity CV under the active Si layer and a lower electrode LE over the active Si layer are formed.

  FIG. 4XA shows the etching process of the slit SL that defines the contour of the flexible beam, corresponding to FIG. 2XE. A group of slits at regular intervals is not formed, but one slit SL on one side that defines the shape of the flexible beam is formed.

  FIG. 4XB corresponds to FIG. 2XG and shows a state where the sacrificial film SF is deposited and the recess is etched.

  4XC corresponds to FIG. 2XK, and forms the adhesion metal layer AM2 and Au seed layer SD on the sacrificial film SF, forms a resist pattern, forms an Au plating layer PL, removes the resist pattern, and is exposed. The state which removed the Au seed layer and the Mo adhesion metal layer by milling is shown.

  4XD corresponds to FIG. 2XN, the sacrificial film SF is removed by etching, and the exposed Mo adhesion metal layer AM2 on the lower surface of the fixed electrode is made of Hayashi Junyaku Kogyo Co., Ltd. using “SLA etchant” made of phosphoric acid-acetic acid nitric acid solution. The state after etching removal is shown. The active Si layer AL remains on both sides of the flexible beam FB through one slit SL on one side.

  Previously, the contact gap was 0.5 μm and the actuator gap was 1.2 μm. The drive voltage was reduced, and the design was changed so that the contact gap was 0.3 μm and the actuator gap was 0.6 μm. The MEMS switch thus designed had 73% failure due to contact between the upper and lower electrodes of the actuator when a driving voltage was applied, and 17% of the elements having an ON-state contact resistance exceeding 2Ω. The remaining good products were 10%.

  On the other hand, the sample prepared according to the first example did not cause a short circuit failure of the actuator, and 7% of the elements had a contact resistance exceeding 2Ω. A non-defective product ratio of 93% was obtained. By forming the window portion WD from which the active Si layer on both sides of the flexible beam FB was removed, an unexpectedly large effect was obtained.

By active Si layer of the flexible beam structure on both sides is removed, Mo or performed suitably wet etching of the adhesion metal layer removal of Mo alloy, the residue is not left, it is Shiryo and yield is improved.

  The first embodiment of the double-supported beam type has been described. A cantilever type MEMS switch can also be created.

  FIG. 5 shows an example of a U-shaped cantilever-shaped MEMS switch. The slit group SL is formed in the active Si layer. By the slit group SL, the rectangular movable part MP is supported on the supporting silicon substrate via the bonding oxide film in the pad parts SPD and DPD via the two flexible beams FB1 and FB2 arranged on the left and right sides. . The bonding oxide film under the movable portion MP and the flexible beams FB1 and FB2 is removed to form a cavity, and the movable portion MP is supported through the flexible beams FB1 and FB2 so as to be elastically deformable. Outside the movable part MP and the flexible beams FB1 and FB2, a wide window part is formed by etching away the active Si layer between the slit groups SL.

  The shape of the flexible beam is not limited to that described above. In the cantilever shape shown in FIG. 6, the active Si layer outside the cantilever can also be removed.

The exemplified materials and numerical values do not have a limiting meaning. Mo alloy or Au alloy can also be used instead of Mo and Au. It will be apparent to those skilled in the art that other various modifications, substitutions, improvements, combinations, and the like are possible.

SS support silicon substrate,
BOX bonding oxide (silicon oxide) film,
AL active silicon layer,
MCE movable contact electrode,
MDE movable drive electrode,
FDE fixed drive electrode,
FCE fixed contact electrode,
SL slit,
CL cantilever,
LE lower electrode,
FB flexible beam,
TH through hole (through hole),
CV cavity,
RP resist pattern,
SF sacrificial film,
AM adhesion metal layer,
SD seed layer,
PL plating layer,
GND Ground wiring,
PD pad,
SPD switch pad,
DPD drive pad,
WD window,

Claims (10)

An SOI substrate in which an active Si layer is bonded to a supporting Si substrate via a bonding oxide film;
The formed from the active Si layer, one end or both ends are supported by the supporting Si substrate via a bonding oxide film, a flexible beam structure having a movable portion, below the movable portion bonding oxide A flexible beam structure in which no film is disposed and which defines a cavity with the supporting Si substrate ;
A movable drive electrode formed on the flexible beam structure;
A movable contact electrode having a movable contact point formed on the flexible beam structure;
A fixed drive electrode that is supported on a first set of fixed portions including a stack of the bonding oxide film and the active Si layer, located on both sides of the flexible beam structure, and extending above the movable drive electrode;
A fixed contact electrode that is supported on a second set of fixed parts including a stack of the bonding oxide film and the active Si layer, located on both sides of the flexible beam structure, and having a fixed contact contact above the movable contact point;
Surrounding the flexible beam structure, the fixed drive electrode, the fixed contact electrode, and a ground wiring formed on the active Si layer;
In the inside of the ground wiring, and the flexible beam structure, said defined in first and second sets of regions other than the fixed portion, the not containing the active Si layer window region,
Have
The fixed drive electrode and the fixed contact electrode are, in the upper part of the first set and the second set of fixed parts, an adhesion metal layer of Mo or Mo alloy, Au or Au alloy formed on the adhesion metal layer. seed layer comprises a plated layer of Au or Au alloy formed on the seed layer, wherein the movable driving electrode, in a free lower surface facing via the movable contact contacts with a gap, Mo or the Mo alloy The adhesion metal layer does not exist, the plating layer is present on the seed layer,
MEMS switch.   The MEMS switch according to claim 1, wherein the window region surrounds each circumference of the flexible beam structure and the first set and the second set of fixing portions.   The MEMS switch according to claim 1, wherein the bonding oxide film is also removed in the window region.   The MEMS switch according to any one of claims 1 to 3, wherein the flexible beam structure is a doubly supported beam structure supported on the supporting Si substrate through bonding oxide films at both ends.   The flexible beam structure is a cantilever structure in which one end side is a free end and the other end side is supported by the supporting Si substrate via a bonding oxide film. The MEMS switch as described.   6. The one end side is a rectangular movable part, and a flexible beam extends from the opposite side of the rectangular movable part on the other end side and is supported by the supporting Si substrate via a bonding oxide film. MEMS switch. A doubly-supported or cantilever-type flexible beam region, a three-dimensional fixed drive electrode and a fixed contact in an active Si layer of an SOI substrate in which an active Si layer is bonded via a bonding oxide film on a supporting Si substrate A first set supporting the electrodes, a second set of electrode support areas, and a ground wiring area surrounding the flexible beam area, the fixed drive electrode and the fixed contact electrode;
Forming a through hole group penetrating the active Si layer in the movable part of the flexible beam region;
Etching away the bonding oxide film under the movable part of the flexible beam region through the through hole to form a cavity,
Forming a movable contact electrode having a movable drive electrode and a movable contact contact on the flexible beam region,
Forming a ground wiring in the ground wiring region;
In the region surrounded by the ground wiring other than the flexible beam region and the electrode support region, a slit group penetrating the active Si layer is formed,
Forming a sacrificial film structure that defines the bottom structure of the plated metal layer;
On the sacrificial film structure, an adhesion metal layer of Mo or Mo alloy, a seed layer of Au or Au alloy is formed,
Forming a pattern defining a plating area on the seed layer;
Forming a plating layer of Au or Au alloy on the exposed seed layer to form a fixed drive electrode and a fixed contact electrode;
Removing the pattern, the exposed seed layer and the adhesion metal layer, the sacrificial film structure;
The active Si layer between the slit groups is removed by etching inside the ground wiring, and the active Si layer other than the flexible beam region, the first set and the second set of electrode support regions is removed. Forming a window,
Wet-etching the adhesion metal layer exposed by removing the sacrificial film;
Manufacturing method of MEMS switch.   8. The method of manufacturing a MEMS switch according to claim 7, wherein the formation of the through hole group and the slit group is performed by deep RIE, and the wet etching of the adhesion metal layer is performed by a phosphoric acid acetic acid nitric acid solution.   9. The method of manufacturing a MEMS switch according to claim 7, wherein the slit group includes parallel slits having a constant pitch. 10. The method of manufacturing a MEMS switch according to claim 7, wherein the window portion surrounds each circumference of the flexible beam region, the first set, and the second set of electrode support regions. 11.

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