JP5833214B2 - Semiconductor device manufacturing method and semiconductor device - Google Patents

Description

  The present invention relates to a method for manufacturing a semiconductor device and a semiconductor device.

  Semiconductor integrated circuits, in particular integrated circuits using MOS transistors, are becoming increasingly highly integrated. Along with this high integration, the MOS transistors used therein have been miniaturized to the nano region. When the miniaturization of such a MOS transistor progresses, it is difficult to suppress the leakage current, and there is a problem that the occupied area of the circuit cannot be easily reduced due to a request for securing a necessary amount of current. In order to solve such a problem, a Surrounding Gate Transistor (hereinafter referred to as “SGT”) having a structure in which a source, a gate, and a drain are arranged in a vertical direction with respect to a substrate and a gate electrode surrounds a columnar semiconductor layer is proposed. (For example, see Patent Document 1, Patent Document 2, and Patent Document 3).

When the silicon pillar is thinned, the density of silicon is 5 × 10 ²² pieces / cm ³ , so that it becomes difficult for impurities to exist in the silicon pillar.

In the conventional SGT, it is proposed to determine the threshold voltage by changing the work function of the gate material by setting the channel concentration to a low impurity concentration of 10 ¹⁷ cm ⁻³ or less (see, for example, Patent Document 4). ).

  In the planar MOS transistor, the sidewall of the LDD region is formed of polycrystalline silicon having the same conductivity type as that of the low concentration layer, and the surface carrier of the LDD region is induced by the work function difference, so that the oxide film sidewall LDD type MOS It has been shown that the impedance of the LDD region can be reduced as compared with a transistor (see, for example, Patent Document 5). The polycrystalline silicon sidewall is shown to be electrically insulated from the gate electrode. In the figure, it is shown that the polysilicon side wall and the source / drain are insulated by an interlayer insulating film.

JP-A-2-71556 Japanese Patent Laid-Open No. 2-188966 Japanese Patent Laid-Open No. 3-145761 JP 2004-356314 A JP 11-297984 A

  Therefore, an object of the present invention is to provide an SGT having a structure in which a transistor is formed by a work function difference between a metal and a semiconductor.

  The semiconductor device of the present invention includes a fin-like semiconductor layer formed on a substrate, a first insulating film formed around the fin-like semiconductor layer, and a first insulating film formed around the first insulating film. 1 metal film, a columnar semiconductor layer formed on the fin-shaped semiconductor layer, a gate insulating film formed around the columnar semiconductor layer, and a third metal formed around the gate insulating film A gate electrode connected to the gate electrode, a second insulating film formed around the upper sidewall of the columnar semiconductor layer, and a second insulating film formed around the second insulating film. 2, wherein the upper part of the columnar semiconductor layer and the second metal film are connected, and the upper part of the fin-like semiconductor layer and the first metal film are connected. .

  The semiconductor layer may be silicon.

  The work functions of the first metal film and the second metal film are between 4.0 eV and 4.2 eV.

  The work function of the first metal film and the second metal film is between 5.0 eV and 5.2 eV.

  Further, the width of the columnar semiconductor layer is the same as the shorter width of the fin-shaped semiconductor layer.

  In the method for manufacturing the device of the present invention, a fin-like semiconductor layer is formed on a substrate, a first insulating film is formed around the fin-like semiconductor layer, and a first insulating film is formed around the first insulating film. A first step of forming a metal film, a second step of forming a columnar semiconductor layer on the fin-shaped semiconductor layer after the first step, and a columnar semiconductor after the second step. Forming a gate insulating film around the layer; forming a third metal gate electrode around the gate insulating film; and a gate wiring connected to the gate electrode; And a fourth step of forming a second insulating film around the upper side wall of the columnar semiconductor layer and forming a second metal film around the second insulating film after the step. Features.

  In the first step, for example, a first resist for forming a fin-like semiconductor layer is formed on a semiconductor substrate, the semiconductor substrate is etched, the fin-like semiconductor layer is formed, and the first step is performed. 1 resist is removed, a fourth insulating film is deposited around the fin-like semiconductor layer, the fourth insulating film is etched back, and an upper portion of the fin-like semiconductor layer is exposed, and the fin-like semiconductor is exposed. Forming the first insulating film on the periphery of the layer and on the fourth insulating film; depositing the first metal film on the periphery of the first insulating film; and etching the first metal film Then, it is left in the shape of a sidewall around the fin-like semiconductor layer, a fifth insulating film is deposited, etch back is performed, the upper part of the first metal film is exposed, and the exposed first metal is exposed. Removing the film is included.

  In the second step, for example, a sixth insulating film is deposited around the fin-shaped semiconductor layer, the sixth insulating film is etched back, and an upper portion of the fin-shaped semiconductor layer is exposed. Forming a second resist so as to be orthogonal to the fin-like semiconductor layer, etching the fin-like semiconductor layer, and removing the second resist, whereby the fin-like semiconductor layer and the second resist are removed. Forming the columnar semiconductor layer so that a portion perpendicular to the columnar semiconductor layer becomes the columnar semiconductor layer.

  In the third step, for example, the gate insulating film is deposited on the periphery of the columnar semiconductor layer and on the fin-shaped semiconductor layer, and the third metal film is formed so as to cover the gate insulating film. Depositing, forming a third resist for forming the gate wiring, etching the third metal film to form the gate wiring, depositing a seventh insulating film, Etching back the insulating film, exposing the upper portion of the third metal film, and removing the exposed third metal film.

  In the fourth step, for example, an eighth insulating film is deposited on the columnar semiconductor layer, the eighth insulating film is etched back, and the upper portion of the columnar semiconductor layer is exposed. Depositing the second insulating film on the top of the columnar semiconductor layer; depositing the second metal film to cover the second insulating film; etching the second metal film; Including remaining in the form of sidewalls around

  According to the present invention, an SGT having a structure in which a transistor is formed by a work function difference between a metal and a semiconductor can be provided.

  A fin-like semiconductor layer formed on the substrate; a first insulating film formed around the fin-like semiconductor layer; and a first metal film formed around the first insulating film. The fin-like semiconductor layer functions as an n-type semiconductor layer or a p-type semiconductor layer by a work function difference between the semiconductor layer and the first metal. For example, if the semiconductor layer is a silicon layer and the work function of the first metal film is between 4.0 eV and 4.2 eV, the fin-like semiconductor layer functions as an n-type semiconductor layer. On the other hand, when the work function of the first metal film is between 5.0 eV and 5.2 eV, the fin-like semiconductor layer functions as a p-type semiconductor layer.

  The second insulating film formed around the upper sidewall of the columnar semiconductor layer and the second metal film formed around the second insulating film include the semiconductor layer and the second metal. Thus, the upper part of the columnar semiconductor layer is caused to function as an n-type semiconductor layer or a p-type semiconductor layer. For example, when the semiconductor layer is a silicon layer and the work function of the second metal film is between 4.0 eV and 4.2 eV, the upper part of the columnar semiconductor layer functions as an n-type semiconductor layer. On the other hand, if the work function of the second metal film is between 5.0 eV and 5.2 eV, the upper part of the columnar semiconductor layer functions as a p-type semiconductor layer.

  Transistor operation can be performed in a state where impurities are not present in the columnar silicon. Therefore, impurity implantation and high-temperature heat process for forming the diffusion layer are not necessary.

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  Hereinafter, a semiconductor device having an SGT structure according to an embodiment of the present invention will be described with reference to FIG.

  A fin-like silicon layer 103 formed on the substrate 101; a first insulating film 105 formed around the fin-like silicon layer 103; and a first insulating film 105 formed around the first insulating film 105. Metal film 106, columnar silicon layer 110 formed on fin-like silicon layer 103, gate insulating film 111 formed around columnar silicon layer 110, and formed around gate insulating film 111 A gate electrode 112a made of a third metal 112; a gate wiring 112b connected to the gate electrode 112a; a second insulating film 116 formed around an upper sidewall of the columnar silicon layer 110; A second metal film 117 formed around the insulating film 116, and the upper part of the columnar silicon layer 110 and the second metal film 117 are connected to the metal wiring 12. It is connected by a said fin shaped silicon layer top and the first metal film 106 is connected by a contact 122.

  Accordingly, the same potential is applied to the upper part of the columnar silicon layer 110 and the second metal film 117. In the upper part of the columnar silicon layer 110, carriers are induced by the work function difference between the second metal film 117 and silicon.

  The same potential is applied to the upper part of the fin-like silicon layer 103 and the first metal film 106. In the upper portion of the fin-like silicon layer 103, carriers are induced by the work function difference between the first metal film 106 and silicon.

  When the work function of the first metal film 106 and the second metal film 117 is between 4.0 eV and 4.2 eV, it is in the vicinity of the work function of n-type silicon of 4.05 eV. The upper part of 110 and the upper part of the fin-like silicon layer 103 function as n-type silicon. The first metal film 106 and the second metal film 117 are preferably made of a compound of tantalum and titanium (TaTi) or tantalum nitride (TaN), for example.

  When the work functions of the first metal film 106 and the second metal film 117 are between 5.0 eV and 5.2 eV, the work function of p-type silicon is in the vicinity of 5.15 eV. The upper part of 110 and the upper part of the fin-like silicon layer 103 function as p-type silicon. The first metal film 106 and the second metal film 117 are preferably, for example, ruthenium (Ru) or titanium nitride (TiN).

  At this time, when the work function of the third metal 112 is between 4.2 eV and 5.0 eV, the third metal 112 can operate as an enhancement type.

  As described above, transistor operation can be performed in a state where impurities are not present in the columnar silicon. Therefore, impurity implantation and high-temperature heat process for forming the diffusion layer are not necessary.

  Below, the manufacturing process for forming the structure of SGT which concerns on embodiment of this invention is demonstrated with reference to FIGS.

  First, a first resist for forming a fin-shaped semiconductor layer is formed on a semiconductor substrate, the semiconductor substrate is etched, the fin-shaped semiconductor layer is formed, the first resist is removed, and the fin-shaped semiconductor layer is removed. Depositing a fourth insulating film around the semiconductor layer; etching back the fourth insulating film; exposing an upper portion of the fin-like semiconductor layer; and surrounding the fin-like semiconductor layer and the fourth insulating film. A first insulating film is formed on the first insulating film, a first metal film is deposited around the first insulating film, the first metal film is etched, and a sidewall is formed around the fin-like semiconductor layer. A first step of depositing a fifth insulating film, performing etch back, exposing the upper portion of the first metal film, and removing the exposed first metal film.

  As shown in FIG. 2, a first resist 102 for forming a fin-like silicon layer 103 is formed on a silicon substrate 101. In this example, a silicon substrate is used, but a substrate other than silicon may be used as long as it is a semiconductor.

  As shown in FIG. 3, the silicon substrate 101 is etched to form a fin-like silicon layer 103. Although the fin-like silicon layer is formed using a resist as a mask this time, a hard mask such as an oxide film or a nitride film may be used.

  As shown in FIG. 4, the first resist 102 is removed.

  As shown in FIG. 5, a fourth insulating film 104 is deposited around the fin-like silicon layer 103. An oxide film formed by high-density plasma or an oxide film formed by low-pressure chemical vapor deposition may be used as the fourth insulating film.

  As shown in FIG. 6, the 4th insulating film 104 is etched back and the upper part of the fin-like silicon layer 103 is exposed.

  As shown in FIG. 7, the first insulating film 105 is formed around the fin-like silicon layer 103 and on the fourth insulating film 104. A thermal oxide film or an oxide film formed by low pressure chemical vapor deposition may be used as the first insulating film. A nitride film or a high dielectric film may be used.

  As shown in FIG. 8, the first metal film 106 is deposited around the first insulating film 105.

  As shown in FIG. 9, the first metal film 106 is etched and left in a sidewall shape around the fin-like silicon layer 103.

  As shown in FIG. 10, a fifth insulating film 107 is deposited. An oxide film formed by high density plasma or an oxide film formed by low pressure chemical vapor deposition may be used as the fifth insulating film.

  As shown in FIG. 11, the fifth insulating film 107 is etched back to expose the upper portion of the first metal film 106.

  As shown in FIG. 12, the exposed first metal film 106 is removed.

  Thus, the fin-like silicon layer 103 is formed on the substrate 101, the first insulating film 105 is formed around the fin-like silicon layer 103, and the first metal film is formed around the first insulating film 105. A first step of forming 106 was shown.

  Next, a sixth insulating film is deposited around the fin-shaped semiconductor layer, the sixth insulating film is etched back, an upper portion of the fin-shaped semiconductor layer is exposed, and is orthogonal to the fin-shaped semiconductor layer. Forming a second resist, etching the fin-like semiconductor layer, and removing the second resist, so that a portion where the fin-like semiconductor layer and the second resist are orthogonal to each other is formed as a columnar semiconductor layer A second step of forming the columnar semiconductor layer will be described.

  As shown in FIG. 13, a sixth insulating film 108 is deposited around the fin-like silicon layer 103. An oxide film formed by high-density plasma or an oxide film formed by low-pressure chemical vapor deposition may be used as the sixth insulating film.

  As shown in FIG. 14, the sixth insulating film 108 is etched back to expose the upper portion of the fin-like silicon layer 103.

  As shown in FIG. 15, a second resist 109 is formed so as to be orthogonal to the fin-like silicon layer 103.

  As shown in FIG. 16, the fin-like silicon layer 103 is etched to form a columnar silicon layer 110. A portion where the fin-shaped silicon layer 103 and the second resist 109 are orthogonal to each other becomes the columnar silicon layer 110. Accordingly, the width of the columnar silicon layer 110 is the same as the width of the fin-shaped silicon layer 103.

  As shown in FIG. 17, the second resist 109 is removed.

  Thus, the second step of forming the columnar silicon layer 110 on the fin-like silicon layer 103 has been shown.

  Next, a gate insulating film is deposited around the columnar semiconductor layer and on the fin-shaped semiconductor layer, a third metal film is deposited so as to cover the gate insulating film, and a gate wiring is formed. 3 resist is formed, the third metal film is etched to form the gate wiring, a seventh insulating film is deposited, the seventh insulating film is etched back, and the third metal film is etched. A third step of exposing the upper part of the film and removing the exposed third metal film is shown.

  As shown in FIG. 18, the sixth insulating film 108 is etched to expose the upper portion of the first metal film 106. This is because the first metal film 106 and the third metal 112 are brought close to each other. This step may be omitted.

  As shown in FIG. 19, a gate insulating film 111 is deposited around the pillar-shaped silicon layer 110 and on the fin-shaped silicon layer 103. The gate insulating film 111 may be any film used in a semiconductor process, such as an oxide film, an oxynitride film, or a high dielectric film.

  As shown in FIG. 20, a third metal film 112 is deposited so as to cover the gate insulating film 111. The third metal film 112 may be any metal that is used in a semiconductor process and sets a threshold voltage of a transistor. At this time, when the work function of the third metal 112 is between 4.2 eV and 5.0 eV, the third metal 112 can operate as an enhancement type.

  As shown in FIG. 21, a third resist 113 for forming the gate wiring 112b is formed.

  As shown in FIG. 22, the third metal film 112 is etched to form a gate wiring 112b.

  As shown in FIG. 23, the third resist 113 is removed.

  As shown in FIG. 24, the 7th insulating film 114 is deposited. An oxide film formed by high-density plasma or an oxide film formed by low-pressure chemical vapor deposition may be used as the seventh insulating film.

  As shown in FIG. 25, the seventh insulating film 114 is etched back to expose the upper portion of the third metal film 112.

  As shown in FIG. 26, the exposed third metal film 112 is removed to form a gate electrode 112a.

  Thus, the gate insulating film 111 is formed around the columnar silicon layer 110, and the gate electrode 112a made of the third metal 112 and the gate wiring 112b connected to the gate electrode 112a are formed around the gate insulating film 111. A third step was shown.

  Next, an eighth insulating film is deposited on the columnar semiconductor layer, the eighth insulating film is etched back, the upper portion of the columnar semiconductor layer is exposed, and a second insulating film is formed on the columnar semiconductor layer. A film is deposited, a second metal film is deposited so as to cover the second insulating film, the second metal film is etched, and a fourth sidewall is left around the top of the columnar semiconductor layer. The process of is shown.

  As shown in FIG. 27, an eighth insulating film 115 is deposited on the columnar silicon layer. An oxide film formed by high-density plasma or an oxide film formed by low-pressure chemical vapor deposition may be used as the eighth insulating film.

  As shown in FIG. 28, the eighth insulating film 115 is etched back to expose the upper portion of the columnar silicon layer 110. If the gate insulating film 111 is sufficiently thin, the steps of FIGS. 27 and 28 may be omitted.

  As shown in FIG. 29, a second insulating film 116 is deposited on the columnar silicon layer 110. The second insulating film is preferably a film formed by deposition. This is because the second metal film 117 and the gate electrode 112a are insulated.

  As shown in FIG. 30, a second metal film 117 is deposited so as to cover the second insulating film 116.

  As shown in FIG. 31, the second metal film 117 is etched and left in a sidewall shape around the top of the columnar silicon layer 110.

  As described above, the fourth step of forming the second insulating film 116 around the upper side wall of the columnar silicon layer 110 and forming the second metal film 117 around the second insulating film 116 is shown. .

  Next, as shown in FIG. 32, a ninth insulating film 118 is deposited.

  As shown in FIG. 33, the 4th resist 119 for forming the contact holes 120 and 121 is formed.

  As shown in FIG. 34, the insulating film is etched to form contact holes 120 and 121.

  As shown in FIG. 35, the 4th resist 119 is removed.

  As shown in FIG. 36, metal 124 is deposited. At this time, contacts 122 and 123 are formed. The upper part of the columnar silicon layer 110 and the second metal film 117 are connected by a metal wiring 124, and the upper part of the fin-like silicon layer and the first metal film 106 are connected by a contact 122.

  As shown in FIG. 37, the 5th resist 125, 126, 127 for forming metal wiring 128,129,130 is formed.

  As shown in FIG. 38, the metal 124 is etched to form metal wirings 128, 129, and 130.

  As shown in FIG. 39, the fifth resists 125, 126, 127 are removed.

  The manufacturing process for forming the structure of the SGT according to the embodiment of the present invention has been described above.

  It should be noted that the present invention can be variously modified and modified without departing from the broad spirit and scope of the present invention. Further, the above-described embodiment is for explaining an example of the present invention, and does not limit the scope of the present invention.

101. Silicon substrate 102. First resist 103. Fin-like silicon layer 104. Fourth insulating film 105. First insulating film 106. First metal film 107. Fifth insulating film 108. Sixth insulating film 109. Second resist 110. Columnar silicon layer 111. Gate insulating film 112. Third metal 112a. Gate electrode 112b. Gate wiring 113. Third resist 114. Seventh insulating film 115. Eighth insulating film 116. Second insulating film 117. Second metal film 118. Ninth insulating film 119. Fourth resist 120. Contact hole 121. Contact hole 122. Contact 123. Contact 124. Metal 125. Fifth resist 126. Fifth resist 127. Fifth resist 128. Metal wiring 129. Metal wiring 130. Metal wiring

Claims (5)

A fin-like semiconductor layer formed on a substrate;
A first insulating film formed around the fin-like semiconductor layer;
A first metal film formed around the first insulating film;
A columnar semiconductor layer formed on the fin-shaped semiconductor layer;
Have
An upper part of the fin-like semiconductor layer and the first metal film are connected to each other.   The semiconductor device according to claim 1, wherein the semiconductor layer is silicon.   3. The semiconductor device according to claim 2, wherein a work function of the first metal film is between 4.0 eV and 4.2 eV.   3. The semiconductor device according to claim 2, wherein a work function of the first metal film is between 5.0 eV and 5.2 eV.   2. The semiconductor device according to claim 1, wherein the width of the columnar semiconductor layer is the same as the shorter width of the fin-shaped semiconductor layer.

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