JP5817360B2 - Scanning transmission electron microscope observation method and scanning transmission electron microscope - Google Patents

Scanning transmission electron microscope observation method and scanning transmission electron microscope Download PDF

Info

Publication number
JP5817360B2
JP5817360B2 JP2011195446A JP2011195446A JP5817360B2 JP 5817360 B2 JP5817360 B2 JP 5817360B2 JP 2011195446 A JP2011195446 A JP 2011195446A JP 2011195446 A JP2011195446 A JP 2011195446A JP 5817360 B2 JP5817360 B2 JP 5817360B2
Authority
JP
Japan
Prior art keywords
detector
electron
image
sample
electron microscope
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011195446A
Other languages
Japanese (ja)
Other versions
JP2013058363A (en
Inventor
康稔 小▲高▼
康稔 小▲高▼
Original Assignee
富士通株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 富士通株式会社 filed Critical 富士通株式会社
Priority to JP2011195446A priority Critical patent/JP5817360B2/en
Publication of JP2013058363A publication Critical patent/JP2013058363A/en
Application granted granted Critical
Publication of JP5817360B2 publication Critical patent/JP5817360B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Description

  The present invention relates to an electron microscope observation method and an electron microscope.
  There is a STEM (Scanning Transmission Electron Microscope) as an apparatus for observing a high-resolution image on a sample or the like. As shown in FIG. 1, in the STEM, the sample 11 is irradiated with an electron beam 12, and the electron beam scattered by the sample 11 is detected by the STEM detector 13, whereby the sample is observed.
  Observation methods of STEM include bright field (BF) -STEM observation using a circular detector, annular bright field (ABF) -STEM observation using an annular detector, and an annular type. Dark field (ADF: Annular Bright Field) -STEM observation. As the STEM detector 13, a circular detector or an annular detector is used according to these observation methods. FIG. 1 shows a rough relationship between the degree of scattering of the electron beam 12 irradiated on the sample 11 and the observation method.
  In BF-STEM observation, a phase interference image due to an electron beam transmission wave and a diffracted wave can be observed. In ABF-STEM observation, distribution of light elements, which has been considered difficult in the past, can be observed at atomic resolution. it can. Further, in the ADF-STEM observation, it is possible to observe a Z-contrast image whose intensity depends on the atomic number, particularly in a HAADF (High Angle ADF) -STEM observation imaged by high-angle scattered electrons. As described above, the electron beam 12 irradiated to the sample 11 is transmitted and scattered in the sample 11, and STEM observations of various techniques can be performed by changing the detection position of the transmitted and scattered electron beam. Further, by installing a plurality of such detectors, STEM observation images obtained by the respective methods can be acquired simultaneously.
  By performing STEM observation of such various methods, the atoms in the sample 11 can be directly observed, analysis of the stress field due to displacement of the arrangement of atoms, atomic positions, etc. in the material forming the sample 11, etc. Can be performed.
JP 2011-22059 A
  By the way, in the atomic resolution observation by STEM or the like, the most important thing is to accurately observe and measure the position of the atom. Therefore, it is important to adjust the optical axis of the incident electron beam by adjusting the lens position and to adjust the crystal orientation in the sample. Various adjustment methods are being studied.
However, in the STEM observation, adjustment of the incident electron beam is not sufficient, and the observed atomic position and atomic shape are greatly influenced by the incident direction of the scattered electron beam to the STEM detector. As a result of many years of research, I was able to gain knowledge. That is, in order to obtain a highly accurate STEM observation image, the position of the STEM detector is extremely important. In other words, as shown in FIG. 2, not only adjustment of the incident angle, coma aberration, and astigmatism, which are irradiation conditions for the electron beam 12 , and adjustment of the tilt angle of the sample 11, but also the STEM detector 13 Position adjustment is also very important.
  By the way, in the electron microscope, since the optical axis is adjusted using an electromagnetic lens, it is affected by an electric field, a magnetic field, etc., so that the optical axis of the electron beam needs to be adjusted appropriately, and STEM detection is interlocked with this. It is also necessary to adjust the incident azimuth in the instrument. In general, as shown in FIG. 3, the STEM apparatus is provided with an electron beam position detector 14 for detecting the position and profile of an electron beam formed by a fluorescent screen, an image detection element, or the like. When the first annular detector 21 is provided above the electron beam position detector 14, the electron beam is irradiated to the center of the first annular detector 21. Adjustment is possible by using the electron beam position detector 14 or the like, but the accuracy is not sufficient. In addition, when the circular detector 22 used for performing the BF-STEM observation is provided below the electron beam position detector 14, the electron beam position detector 14 blocks the electron beam. High alignment cannot be performed. Although it is possible to improve the alignment accuracy by using a camera or the like as the electron beam position detector 14 and installing a plurality of such cameras, the apparatus becomes expensive and is not preferable.
  3 is provided with a second annular detector 23 below the electron beam position detector 14 in the same manner as the circular detector 22, and the second annular detector The electron beam that has passed through the opening of the detector 23 is incident on the EELS detector 24. In this STEM apparatus, for example, the first annular detector 21 is for performing HAADF-STEM observation, and the second annular detector 23 is for ADF-STEM observation, ABF-STEM observation, and the like. It is for performing. An EELS (Electron Energy Loss Spectroscopy) detector 24 is for measuring the energy loss spectrum of the electron beam transmitted through the sample 11. In the present application, the first annular detector 21 may be referred to as an upper STEM detector, and the circular detector 22 and the second annular detector 23 may be referred to as a lower STEM detector. 3A shows a case where an electron beam is detected by the first annular detector 21 and the circular detector 22, and FIG. 3B shows an electron beam detected by the first annular detector. The case where it detects with the detector 21 and the 2nd annular detector 23 is shown.
By the way, the intensity obtained by the circular detector 22 is adjusted so that the entire 000 disk (electron beam diffraction disk), which is the center of electron diffraction for the alignment of the circular detector 22, enters the circular detector 22. There is a method centering on the maximum. However, when the thickness of the sample 11 is increased, the position of the maximum intensity is not always the center, and this method cannot be adjusted sufficiently. Further, in the above-described method, as shown in FIG. 4 ( c ), when the electron diffraction disk is small with respect to the circular detector 22, the alignment is possible, but FIG. 4 (b) and FIG. As shown in (a), when the electron diffraction disk is large, accurate alignment cannot be performed.
  In the case of the first annular detector 21 and the second annular detector 23, as shown in FIG. 5, since the detector is an annular detector 31, an opening 32 is provided in the central portion. Have. Therefore, it is difficult to perform alignment based on the maximum intensity from the annular detector 31. FIG. 5 shows the relationship between the annular detector 31 and the electron diffraction disk, FIG. 5 (a) shows the relationship in ABF-STEM observation, and FIG. 5 (b) shows the ADF- The relationship in STEM observation is shown, and FIG.5 (c) shows the relationship in HAADF-STEM observation.
  For this reason, the STEM detector can be adjusted to the optimum detection position, the transmitted and scattered electron beam can be accurately incident, and an electron microscope observation that can obtain an accurate and highly accurate STEM image There is a need for methods and electron microscopes.
According to one aspect of the present embodiment, in a scanning transmission electron microscope observation method of irradiating a sample with an electron beam, detecting an electron beam transmitted or scattered through the sample with a detector, and observing the sample, A step of acquiring an image of the sample by the detector, and selecting an image closest to the acquired image from a plurality of images observed in a state where the position of the detector is shifted, and the selected image And calculating the direction and amount of displacement of the detector position based on the position information of the detector, and moving the detector based on the calculated direction and amount of displacement of the detector position. And a process.
Further, according to another aspect of the present embodiment, the sample is irradiated with an electron beam, the electron beam transmitted or scattered through the sample is detected by a detector after passing through a deflection lens, and the sample is In the observation method of the scanning transmission electron microscope to be observed, the step of acquiring the image of the sample by the detector and the image closest to the acquired image are observed in a state where the position of the detector is shifted. A step of selecting from a plurality of images, calculating a direction and amount of displacement of the position of the detector based on position information of the selected image, and a direction of displacement of the calculated position of the detector And a step of deflecting an electron beam by the deflecting lens based on the amount of deviation.
According to another aspect of the present embodiment, an electron gun that irradiates a sample with an electron beam, a detector that detects an electron beam transmitted or scattered through the sample, and a moving mechanism that moves the detector and parts, the controls the moving mechanism section on the basis of the image obtained by the detector, have a, and a control unit for moving the detector to the control unit, are offset position of the detector A storage unit in which a plurality of images observed in the state are stored is connected, and the control unit positions the image closest to the image acquired by the detector among the images stored in the storage unit the direction and amount of deviation is the deviation of the position of the detector calculates, based on the information, and wherein Rukoto moving the detector on the basis of the direction and amount of deviation is the deviation of the calculated position of the detector To do.
According to another aspect of the present embodiment, an electron gun that irradiates a sample with an electron beam, a detector that detects an electron beam transmitted or scattered through the sample, and an electron beam incident on the detector A deflecting lens that controls the position of the detector, a moving mechanism that moves the detector, and a controller that controls the deflecting lens based on an image obtained by the detector. A storage unit storing a plurality of images to be observed in a state where the detector is displaced is connected, and the control unit is acquired by the detector from among the images stored in the storage unit. The direction and amount of displacement of the detector position are calculated based on the position information of the image closest to the generated image, and the deflection is calculated based on the calculated direction and amount of displacement of the detector position. The electron beam is deflected by the lens. Characterized in that to.
  According to the disclosed electron microscope observation method and electron microscope, the STEM detector can be adjusted to the optimum detection position, and an accurate and highly accurate STEM image can be obtained.
Explanatory diagram of observation method in STEM Explanatory drawing of misalignment in STEM Explanatory drawing of a STEM having a plurality of STEM detectors Illustration of circular detector Illustration of the annular detector Structure diagram of electron microscope in this embodiment Explanatory drawing of the principal part of the electron microscope in this Embodiment Atom image by electron microscope Illustration of misalignment of circular detector Illustration of scattering angle in STEM Flow chart of observation method of electron microscope in the present embodiment Explanatory drawing of the observation method of the electron microscope in this Embodiment
  The form for implementing is demonstrated below. In addition, about the same member etc., the same code | symbol is attached | subjected and description is abbreviate | omitted.
(electronic microscope)
The electron microscope in this Embodiment is demonstrated based on FIG. The electron microscope in the present embodiment is a scanning transmission electron microscope. The electron microscope in the present embodiment includes an electron gun 111, converging lenses 112 and 113, a converging lens diaphragm 114, a scanning coil 115, an aberration correction unit 116, an objective lens 117, a projection lens 118, a deflection lens 119, and an upper STEM detector 120. And an upper electron beam position detector 121, a lower STEM detector 122, and a lower electron beam position detector 123.
  The sample 110 to be observed is formed of a single crystal or the like, and is placed between the objective lens 117 and the projection lens 118. In addition, the electron microscope in the present embodiment has a control unit 130, and a storage unit 140 is connected to the control unit 130. The control unit 130 includes an aberration correction unit 116, an objective lens 117, a projection lens 118, a deflection lens 119, an upper STEM detector 120, an upper electron beam position detector 121, a lower STEM detector 122, and a lower electron beam position detector. 123.
  The electron gun 111 accelerates electrons with a predetermined acceleration voltage and outputs them as an electron beam. Converging lenses 112 and 113 are provided below the electron gun 111. The converging lenses 112 and 113 are for converging the electron beam output from the electron gun 111 to a desired size, and are provided with a plurality of stages (two stages in the case shown in FIG. 6).
  The converging lens stop 114 is provided under the converging lenses 112 and 113, and the electron beam converged by the converging lenses 112 and 113 has an undesirably widened portion.
  The scanning coil 115 is provided below the converging lens stop 114, and scans the electron beam irradiated on the surface of the sample 110 by deflecting the electron beam.
  The aberration correction unit 116 is provided below the scanning coil 115 and corrects aberrations such as spherical aberration and astigmatism of the electron beam based on a control signal from the control unit 130.
  The objective lens 117 is provided under the aberration correction unit 116, and based on a control signal from the control unit 130, an electron beam is focused on the surface of the sample 110 or in the vicinity thereof so that the irradiated electron beam is in focus. Refract.
  The projection lens 118 is provided below the sample 110, and based on a control signal from the control unit 130, a spread angle of an electron beam transmitted and diffracted through the sample 110 so as to enter a STEM detector used for measurement. Is to adjust.
  The deflection lens 119 is provided below the sample 110 and deflects the direction of the electron beam based on a control signal from the control unit 130.
  The upper STEM detector 120 is provided below the deflection lens 119 and is an annular detector as shown in FIG. 7, and the detected information is transmitted to the control unit 130. The upper STEM detector 120 has a moving mechanism unit 151 for moving the upper STEM detector 120, and the upper STEM detector 120 can be moved by the moving mechanism unit 151.
  The upper electron beam position detector 121 is provided below the upper STEM detector 120 and is formed by a CCD (Charge Coupled Device) camera, a fluorescent plate, or the like so as to detect the irradiation position of the electron beam. Yes.
  The lower STEM detector 122 is provided below the upper electron beam position detector 121. For example, the lower STEM detector 122 includes a circular detector 122a and an annular detector 122b as shown in FIG. The information is transmitted to the control unit 130. The lower STEM detector 122 has a moving mechanism unit 152 for moving the lower STEM detector 122, and the lower STEM detector 122 can be moved by the moving mechanism unit 152.
  The lower electron beam position detector 123 is provided below the lower STEM detector 122, and is formed by a CCD camera or the like so that the irradiation position of the electron beam can be detected.
  The control unit 130 controls the deflection lens 119 or the positions of the upper STEM detector 120 and the lower STEM detector 122 based on information from the upper STEM detector 120 and the lower STEM detector 122, and further obtains the obtained information. Analysis is performed based on the received information.
  In the storage unit 140, for example, STEM images and the like when the circular detector 122a in the lower STEM detector 122 is installed at various positions are accumulated.
  In the present embodiment, the circular detector 122a is for performing BF-STEM observation, and the annular detector 122b is for performing ADF-STEM observation, ABF-STEM observation, and the like. The upper STEM detector 120, which is an annular detector, is for performing HAADF-STEM observation and the like. In the present embodiment, the upper STEM detector 120 corresponds to a first annular detector, and the annular detector 122b corresponds to a second annular detector.
  In the present embodiment, the adjustment can be made without the upper electron beam position detector 121 and the lower electron beam position detector 123, but the upper electron beam position detector 121 and the lower electron beam position detector 123 can be adjusted. By providing, adjustment with higher accuracy can be performed.
(How to adjust the observation position with an electron microscope)
Next, a method for adjusting the observation position of the electron microscope in the present embodiment will be described. FIG. 8 shows a BF-STEM image obtained when observing Si (001). Specifically, as shown in FIG. 9, FIG. 8 shows a BF− at a position where the circular detector 122 a is optimal and a position shifted by 10 mrad in eight directions with respect to a position where the circular detector 122 a is optimal. A STEM image is shown. That is, FIG. 8A shows a Si atom image observed at a position where the circular detector 122a is optimal. 8 (b) to (i) show that the circular detector 122a is located at the upper left, upper, upper right, right, lower right, lower, lower left, Si atom images observed at positions shifted by 10 mrad in the eight directions on the left and upper left are shown.
  Specifically, when the position of the circular detector 122a is accurately located at the center, the Si atom image is observed concentrically and circularly as shown in FIG. However, when the position of the circular detector 122a is deviated, the Si atom image is distorted and observed in the deviated direction as shown in FIGS. Therefore, it can be determined whether or not the position of the circular detector 122a is shifted depending on whether or not the observed Si atom image is distorted. In addition, when the Si atom image is distorted, in which direction It is possible to know the direction in which the circular detector 122a is displaced depending on whether it is distorted.
  The observation conditions are as follows: the acceleration voltage of the electron beam is 200 kV, the electron beam incidence half angle is 20 mrad, the capture angle of the circular detector 122a in the lower STEM detector 122 is 0 (center) to 16 mrad, and the focus shift amount is −20 nm. is there. In this Si atomic resolution image, the electron beam is placed so that the focus of the electron beam is underfocus with respect to the sample 110. In this way, by making the sample 110 under focus, the feature depending on the position of the circular detector appears more remarkably in the shape of the atom. The under focus means that the focus is located on the inner side of the sample 110 with respect to the sample 110.
  Therefore, nine images shown in FIG. 8 are stored in the storage unit 140 in advance, and an image closest to the image observed by the circular detector 122a is selected from the images shown in FIG. Based on the selected image, the direction and amount of displacement of the circular detector 122a are calculated by the control unit 130 or the like, and the moving mechanism unit is controlled by the control unit 130 or the like based on the direction and amount of displacement. The position of the circular detector 122a is moved by 152. Thereby, the position of the circular detector 122a can be adjusted to an optimum position.
  In the above description, the case where the displacement amount is 10 mrad has been described. However, by acquiring an image with a smaller displacement amount and storing it in the storage unit 140, the position of the circular detector 122a can be optimized with higher accuracy. It can be adjusted to be a correct position. For example, by acquiring in advance an image observed at a position where the position of the circular detector 122a is shifted every 1 mrad and storing it in the storage unit 140, the position of the circular detector 122a can be obtained with higher accuracy. Can be adjusted to an optimum position. In addition to the image obtained by actual observation, the image stored in the storage unit 140 is an image obtained by performing a simulation based on a standard sample such as a single crystal serving as the sample 110. Also good.
In the description of the present embodiment, as shown in FIG. 10, when the sample 110 and the circular detector 122a are installed at positions separated by a distance L, the Bragg condition is 2 d sin θ = λ. In the case of TEM, since the scattering angle s is a half angle, dsin θ = λ and s = sin θ / λ. The unit of θ is 1 ° = 1.745 mrad = 6.95 nm −1 under the condition that the acceleration voltage of the electron beam is 200 kV (λ = 0.00251 nm).
(Electron microscope observation method)
Next, the observation method of the electron microscope in this Embodiment is demonstrated based on FIG.
  First, in step 102 (S102), the observation conditions of the scanning transmission electron microscope, which is the electron microscope in the present embodiment, are set.
  Next, in step 104 (S104), the optical axis of the electron beam in the scanning transmission electron microscope is adjusted.
  Next, in step 106 (S106), the sample 110 to be observed is placed at a predetermined position of the scanning transmission electron microscope. The sample 110 is formed of, for example, a single crystal or the like, and is a Si single crystal or the like.
  Next, in step 108 (S108), the position of the circular detector 122a and the like in the lower STEM detector 122 is adjusted and set manually.
  Next, in step 110 (S110), a defocus amount is set.
  Next, in step 112 (S112), the sample 110 is irradiated with an electron beam to obtain an atomic image of the sample 110.
  Next, in step 114 (S114), atomic image matching is performed. Specifically, an image closest to the acquired atomic image is selected from images stored in advance in the storage unit 140.
  Next, in step 116 (S116), based on the image selected in step 114, the direction and amount of displacement of the circular detector 122a in the lower STEM detector 122 are calculated.
  Next, in step 118 (S118), it is determined whether or not the deviation amount of the circular detector 122a calculated in step 116 is equal to or less than a predetermined value. When the deviation amount of the circular detector 122a is equal to or less than a predetermined value, the routine proceeds to step 122. On the other hand, when the deviation amount of the circular detector 122a exceeds a predetermined value, the routine proceeds to step 120. Here, the predetermined value is, for example, 0.5 mrad.
  Next, in step 120 (S120), the position of the electron beam irradiated on the circular detector 122a or the direction of the deviation of the circular detector 122a calculated in step 116 is the position of the circular detector 122a. And move based on the amount of deviation. Specifically, when moving the position of the irradiated electron beam, the deflection direction and deflection distance of the electron beam are calculated based on the direction and amount of deviation, as shown in FIG. The electron beam irradiated to the circular detector 122a is deflected by the deflection lens 119. Also, when moving the position of the circular detector 122a, the moving direction and moving distance of the circular detector are calculated based on the direction and amount of shift, and as shown in FIG. The shape detector 122a is moved in a direction substantially perpendicular to the incident direction of the electron beam. The circular detector 122a is moved by the moving mechanism unit 152 or the like. Thereafter, the process proceeds to step 112, and an atomic image of the sample 110 is acquired again.
  Next, in step 122 (S122), since the acquired STEM image is an image at the position where the circular detector 122a is optimal, the process ends after the acquired STEM image is stored.
  Thus, the electron microscope observation method in the present embodiment is completed. In the observation method of the electron microscope in the present embodiment, since the circular detector 122a and the like can be adjusted to the optimum detection position, the transmitted and scattered electron beams can be accurately incident, and accurate and accurate. High STEM image can be obtained.
  In the above description, the circular detector 122a in the lower STEM detector 122 has been described, but the same applies to the annular detector 122b in the lower STEM detector 122 and the annular detector as the upper STEM detector 120. can do.
  Although the embodiment has been described in detail above, it is not limited to the specific embodiment, and various modifications and changes can be made within the scope described in the claims.
In addition to the above description, the following additional notes are disclosed.
(Appendix 1)
In the electron microscope observation method of irradiating the sample with an electron beam, detecting the electron beam transmitted or scattered through the sample with a detector, and observing the sample,
Obtaining an image of the sample by the detector;
An image closest to the acquired image is selected from a plurality of images observed in a state where the position of the detector is shifted, and the position of the detector is shifted based on the position information of the selected image. Calculating a direction and a deviation amount,
Moving the detector based on the calculated direction and amount of displacement of the detector position;
The observation method of an electron microscope characterized by having.
(Appendix 2)
The step of acquiring an image of the sample, the step of calculating the direction and amount of displacement of the position of the detector, and the step of moving the detector are performed until the calculated amount of displacement becomes a predetermined value or less. The observation method of an electron microscope according to appendix 1, wherein the method is repeated.
(Appendix 3)
In an observation method of an electron microscope in which an electron beam is irradiated onto a sample, the electron beam transmitted or scattered through the sample is detected by a detector after passing through a deflection lens, and the sample is observed,
Obtaining an image of the sample by the detector;
An image closest to the acquired image is selected from a plurality of images observed in a state where the position of the detector is shifted, and the position of the detector is shifted based on the position information of the selected image. Calculating a direction and a deviation amount,
A step of deflecting an electron beam by the deflecting lens based on the calculated direction and amount of displacement of the detector;
The observation method of an electron microscope characterized by having.
(Appendix 4)
The step of acquiring an image of the sample, the step of calculating the direction and amount of displacement of the position of the detector, and the step of deflecting an electron beam by the deflecting lens are such that the calculated amount of displacement is not more than a predetermined value. The electron microscope observation method according to appendix 3, wherein the method is repeatedly performed until
(Appendix 5)
The plurality of images observed in a state where the position of the detector is deviated is an image observed in a state where the detector is deviated in four directions, or is observed in a state where the detector is deviated in eight directions. An image to be
The observation method for an electron microscope according to any one of appendices 1 to 4, wherein the observation method is an image observed by a detector at a position shifted for each predetermined shift amount in each direction.
(Appendix 6)
6. The electron microscope observation method according to any one of appendices 1 to 5, wherein the detector is a circular detector or an annular detector.
(Appendix 7)
7. The electron microscope observation method according to any one of appendices 1 to 6, wherein the sample is a single crystal.
(Appendix 8)
8. The electron microscope observation method according to any one of appendices 1 to 7, wherein the electron beam irradiated to the sample is irradiated so as to be under-focused on the sample.
(Appendix 9)
An electron gun that irradiates the sample with an electron beam;
A detector for detecting an electron beam transmitted or scattered through the sample;
A moving mechanism for moving the detector;
A control unit that controls the moving mechanism based on an image obtained by the detector and moves the detector;
An electron microscope comprising:
(Appendix 10)
The control unit is connected to a storage unit that stores a plurality of images observed in a state where the position of the detector is shifted,
The supplementary note 9 is characterized in that the control unit calculates a moving direction and a moving distance of the detector based on position information of an image stored in the storage unit, and moves the detector. Electron microscope.
(Appendix 11)
The control unit selects an image closest to an image obtained in the detector when observing the sample from the images stored in the storage unit, and based on position information of the selected image, The electron microscope according to appendix 10, wherein the moving direction and moving distance of the detector are calculated.
(Appendix 12)
An electron gun that irradiates the sample with an electron beam;
A detector for detecting an electron beam transmitted or scattered through the sample;
A deflection lens for controlling the position of an electron beam incident on the detector;
A moving mechanism for moving the detector;
A control unit for controlling the deflection lens based on the image obtained by the detector;
An electron microscope comprising:
(Appendix 13)
The control unit is connected to a storage unit that stores a plurality of images observed in a state where the position of the detector is shifted,
The control unit calculates a deflection direction and a deflection distance of an electron beam by the deflection lens based on an image stored in the storage unit, and deflects the electron beam in the deflection lens. 12. An electron microscope according to 12.
(Appendix 14)
The control unit selects an image closest to an image obtained in the detector when observing the sample from the images stored in the storage unit, and based on position information of the selected image, 14. The electron microscope according to appendix 13, wherein a deflection direction and a deflection distance of an electron beam in the deflection lens are calculated.
(Appendix 15)
The plurality of images observed in a state where the position of the detector is deviated is an image observed in a state where the detector is deviated in four directions, or is observed in a state where the detector is deviated in eight directions. An image to be
15. The electron microscope according to any one of appendices 10, 11, 13, and 14, wherein the electron microscope is an image observed by a detector at a position shifted for each predetermined shift amount in each direction.
(Appendix 16)
The plurality of images observed in the state where the position of the detector is shifted are obtained by simulating the image observed when the position of the detector is shifted, or based on the structure of the sample The electron microscope according to any one of appendices 10, 11, 13, 14, and 15, which is an image.
(Appendix 17)
The electron microscope according to any one of appendices 9 to 16, wherein the detector is a circular detector or an annular detector.
(Appendix 18)
A plurality of the detectors are provided,
The electron microscope according to any one of appendices 9 to 16, wherein the plurality of detectors include a circular detector and an annular detector.
110 Sample 111 Electron gun 112 Converging lens 113 Converging lens 114 Converging lens diaphragm 115 Scanning coil 116 Aberration correction unit 117 Objective lens 118 Projecting lens 119 Deflection lens 120 Upper STEM detector (annular detector)
121 Upper Electron Beam Position Detector 122 Lower STEM Detector 122a Circular Detector 122b Annular Detector 123 Lower Electron Beam Position Detector 130 Control Unit 140 Storage Unit 151 Movement Mechanism Unit 152 Movement Mechanism Unit

Claims (6)

  1. In an observation method of a scanning transmission electron microscope that irradiates a sample with an electron beam, detects an electron beam transmitted or scattered through the sample with a detector, and observes the sample,
    Obtaining an image of the sample by the detector;
    An image closest to the acquired image is selected from a plurality of images observed in a state where the position of the detector is shifted, and the position of the detector is shifted based on the position information of the selected image. Calculating a direction and a deviation amount,
    Moving the detector based on the calculated direction and amount of displacement of the detector position;
    A method of observing a scanning transmission electron microscope, comprising:
  2. The step of acquiring an image of the sample, the step of calculating the direction and amount of displacement of the position of the detector, and the step of moving the detector are performed until the calculated amount of displacement becomes a predetermined value or less. The method of observing a scanning transmission electron microscope according to claim 1, wherein the method is repeated.
  3. In an observation method of a scanning transmission electron microscope in which an electron beam is irradiated onto a sample, the electron beam transmitted or scattered through the sample is detected by a detector after passing through a deflection lens, and the sample is observed,
    Obtaining an image of the sample by the detector;
    An image closest to the acquired image is selected from a plurality of images observed in a state where the position of the detector is shifted, and the position of the detector is shifted based on the position information of the selected image. Calculating a direction and a deviation amount,
    A step of deflecting an electron beam by the deflecting lens based on the calculated direction and amount of displacement of the detector;
    A method of observing a scanning transmission electron microscope, comprising:
  4. The step of acquiring an image of the sample, the step of calculating the direction and amount of displacement of the position of the detector, and the step of deflecting an electron beam by the deflecting lens are such that the calculated amount of displacement is not more than a predetermined value. The method of observing a scanning transmission electron microscope according to claim 3, wherein the method is repeatedly performed until
  5. An electron gun that irradiates the sample with an electron beam;
    A detector for detecting an electron beam transmitted or scattered through the sample;
    A moving mechanism for moving the detector;
    A control unit for controlling the moving mechanism unit based on an image obtained by the detector and moving the detector;
    I have a,
    The control unit is connected to a storage unit that stores a plurality of images observed in a state where the position of the detector is shifted,
    The control unit calculates a shift direction and a shift amount of the position of the detector based on position information of an image closest to an image acquired by the detector among images stored in the storage unit, A scanning transmission electron microscope characterized in that the detector is moved based on the calculated direction and amount of displacement of the detector position .
  6.   An electron gun that irradiates the sample with an electron beam;
      A detector for detecting an electron beam transmitted or scattered through the sample;
      A deflection lens for controlling the position of an electron beam incident on the detector;
      A moving mechanism for moving the detector;
      A control unit for controlling the deflection lens based on the image obtained by the detector;
      Have
      The control unit is connected to a storage unit that stores a plurality of images observed in a state where the position of the detector is shifted,
      The control unit calculates a shift direction and a shift amount of the position of the detector based on position information of an image closest to an image acquired by the detector among images stored in the storage unit, A scanning transmission electron microscope characterized in that an electron beam is deflected by the deflecting lens based on the calculated direction and amount of displacement of the detector.
JP2011195446A 2011-09-07 2011-09-07 Scanning transmission electron microscope observation method and scanning transmission electron microscope Active JP5817360B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011195446A JP5817360B2 (en) 2011-09-07 2011-09-07 Scanning transmission electron microscope observation method and scanning transmission electron microscope

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011195446A JP5817360B2 (en) 2011-09-07 2011-09-07 Scanning transmission electron microscope observation method and scanning transmission electron microscope

Publications (2)

Publication Number Publication Date
JP2013058363A JP2013058363A (en) 2013-03-28
JP5817360B2 true JP5817360B2 (en) 2015-11-18

Family

ID=48134068

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011195446A Active JP5817360B2 (en) 2011-09-07 2011-09-07 Scanning transmission electron microscope observation method and scanning transmission electron microscope

Country Status (1)

Country Link
JP (1) JP5817360B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3731257A3 (en) * 2016-03-04 2021-02-24 Phenom-World Holding B.V. Scanning electron microscope
US11024481B2 (en) 2016-03-04 2021-06-01 Fei Company Scanning electron microscope

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6318986B2 (en) * 2014-08-28 2018-05-09 富士通株式会社 Scanning transmission electron microscope image acquisition method and scanning transmission electron microscope
JP6595856B2 (en) * 2015-09-07 2019-10-23 日本電子株式会社 Charged particle apparatus and measurement method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0997584A (en) * 1995-09-29 1997-04-08 Shimadzu Corp Electron beam diffracting device
JP2006196236A (en) * 2005-01-12 2006-07-27 Hitachi High-Technologies Corp Electron microscope and observation method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3731257A3 (en) * 2016-03-04 2021-02-24 Phenom-World Holding B.V. Scanning electron microscope
US11024481B2 (en) 2016-03-04 2021-06-01 Fei Company Scanning electron microscope

Also Published As

Publication number Publication date
JP2013058363A (en) 2013-03-28

Similar Documents

Publication Publication Date Title
US7683320B2 (en) Transmission electron microscope
CN105280464B (en) Operate the particle beam system and method for particle optics unit
EP2639814B1 (en) Charged particle optical equipment and method for measuring lens aberration
US9040911B2 (en) Scanning electron microscope
CN1979751B (en) Method for determining the aberration coefficients of the aberration function of a particle-optical lens
JP4679978B2 (en) Charged particle beam application equipment
WO2014188882A1 (en) Charged particle beam application device
US20060043293A1 (en) Charged particle beam adjustment method and apparatus
JP5817360B2 (en) Scanning transmission electron microscope observation method and scanning transmission electron microscope
US9136087B2 (en) Method of investigating and correcting aberrations in a charged-particle lens system
US10014153B2 (en) Electron microscope and method of aberration measurement
JP2006173027A (en) Scanning transmission electron microscope, aberration measuring method, and aberration correction method
US6765217B1 (en) Charged-particle-beam mapping projection-optical systems and methods for adjusting same
US10134558B2 (en) Scanning electron microscope
JP2017220413A (en) Charged particle beam device and its aberration compensation method
US7888641B2 (en) Electron microscope with electron spectrometer
JP6266467B2 (en) Electron microscope and monochromator adjustment method
EP2375436A1 (en) Transmission electron microscope having electron spectrometer
US9484182B2 (en) Charged-particle-beam device and method for correcting aberration
CN110546732A (en) Measuring and controlling aberrations in electron microscopes
WO2015015985A1 (en) Charged particle beam device and aberration measurement method in charged particle beam device
US8294118B2 (en) Method for adjusting optical axis of charged particle radiation and charged particle radiation device
JP2016009622A (en) Position adjustment method for detector in electron microscope and position adjustment method for image detector
JP5228463B2 (en) Electron beam apparatus, electron beam shape measuring method and image processing method
US20210233738A1 (en) Charged Particle Beam Apparatus

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140508

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150218

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150303

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150507

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150901

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150914

R150 Certificate of patent (=grant) or registration of utility model

Ref document number: 5817360

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150