JP5813341B2 - Film forming composition and thin film transistor using the composition - Google Patents

Description

  The present invention relates to a film forming composition excellent in process adaptability and a thin film transistor using the composition.

  In recent years, elements using organic semiconductors have been developed in place of conventional inorganic materials such as amorphous silicon and single crystal silicon. Compared with an inorganic semiconductor element having a complicated manufacturing process, an organic semiconductor element can be manufactured with a large area by a simple process and may be manufactured at low cost. In addition, it has high applicability to flexible substrates using plastics and the like because of the characteristics of organic materials such as flexibility and low temperature film formation.

  In such an organic semiconductor element, a thin film made of an inorganic or organic material is used as a gate insulating film or a protective film of the element. Among these, in order to exhibit the characteristics of the organic semiconductor such as reduction of the manufacturing cost and applicability to a flexible substrate, it is desirable that these thin films are also made of an organic substance. As such a thin film, for example, a method of forming an organic film such as parylene on the protective film by chemical vapor deposition (CVD) has been proposed, but CVD requires an advanced vacuum process. There is a drawback that the manufacturing process becomes complicated (Patent Document 1).

  A method of forming a polymer or a curable material by a wet process such as coating or printing has also been proposed, but the organic semiconductor is damaged by the solvent used during the film formation or the formed film, and the electrical characteristics are reduced. There has been a problem of reduction (Patent Document 2).

  On the other hand, a method of applying a water-soluble resin as a film forming material has been proposed, but there is a possibility that the organic semiconductor film and the water-soluble resin may react, and the damage during film formation has not been completely improved. (Patent Document 3).

  Furthermore, although a method of applying using a fluorine-based solvent and a fluorine-based resin as a film forming material has been proposed, there is a problem that a film made of a fluorine resin has low adhesion to other layers (Patent Document 4).

JP 2006-128623 A JP 2006-344952 A JP2008-306188 JP2010-34342A

In view of the above circumstances, an object of the present invention is to provide a film-forming composition having excellent adaptability to the manufacturing process of an organic semiconductor element, and a thin film transistor using the composition.

In view of the above circumstances, as a result of intensive studies by the present inventors, it has been found that the above-described problems can be solved with the following configuration. That is, the present invention has the following configuration.

  1). A film-forming composition containing, as essential components, (a) an organic compound containing 0.6 mmol / g or more of a structure represented by the following formula (I), and (b) an organic solvent.

  2). The film formation according to 1), wherein the organic compound (a) is any one of an epoxy compound, an acrylic compound, a phenol compound, a benzoxazole compound, an imide compound, a cyanate compound, and a polyorganosiloxane compound. Composition.

  3). The film-forming composition according to 1) or 2), wherein the organic solvent (b) includes at least one selected from propylene carbonate, acetonitrile, and dimethyl sulfoxide.

  4). The film-forming composition according to any one of 1) to 3), wherein the organic compound (a) has curability.

  5). The film-forming composition according to any one of 1) to 4), wherein the organic compound (a) has photocurability.

  6). The film forming composition according to any one of 1) to 5), wherein the organic compound (a) is a compound that is cured by at least one reaction among cationic polymerization and hydrosilylation reaction.

  7). The film forming composition according to any one of 1) to 6), wherein the organic compound (a) has a structure represented by the following formula (X1) or (X2).

(Wherein R ¹ represents an element other than a hydrogen atom, and each R ¹ may be different or the same)
8). Hydrosilylation reaction product of organic compound (a), (α) a compound having a carbon-carbon double bond having reactivity with SiH group in one molecule, and (β) an organosiloxane compound having SiH group The film-forming composition according to any one of 1) to 7), characterized in that: 9). The film forming composition according to 8) , wherein the compound (α) is a compound having a Si—CH═CH ₂ group.

  10). Compound (β) is represented by the following general formula (II)

(Wherein ^R 2, ^{R 3} may be the same or different represents an organic group having 1 to 10 carbon atoms, n represents 1 to 10, m represents a number of 0)
The film forming composition according to any one of 9) to 10), which is a cyclic polyorganosiloxane compound having a SiH group represented by:

  11). Hydrosilylation of a compound in which the organic compound (a) has a carbon-carbon double bond having a reactivity with a photopolymerization functional group and a SiH group in one molecule (α), (β), and (γ) The composition for film formation as described in any one of 9) to 10) containing a reactant.

  12). A thin film transistor obtained by the film forming composition according to any one of 1) to 11).

  ADVANTAGE OF THE INVENTION According to this invention, the composition for film formation which is excellent in the manufacturing process adaptability of an organic-semiconductor element, and the thin-film transistor using this composition can be provided.

The UV spectrum of a TIPS pentacene film is shown.

  The film forming composition of the present invention is characterized in that it contains (a) an organic compound containing 0.6 mmol / g or more of the structure represented by formula (I), and (b) an organic solvent. In particular, by using an organic compound having a structure represented by the formula (I) of 0.6 mmol / g or more, damage to the organic semiconductor film is minimized when used for an insulating film of an organic semiconductor element, etc. An element having excellent characteristics can be created.

  The organic compound (a) is a component that forms a film, and its composition is not particularly limited as long as it has a structure represented by the formula (I) of 0.6 mmol / g or more, and may be a single substance, It may consist of a plurality of substances.

  The content of the structure represented by the formula (I) in the organic compound (a) is preferably 0.6 to 5.0 mmol / g, more preferably 0.8 to 4.0 mmol / g, and 1.5 to 3 0.5 mmol / g is particularly preferred. If the content is small, it is difficult to obtain the effect of the present invention. If the content is too large, the film forming property of the film-forming composition deteriorates.

  In addition, the isocyanuric ring structure of the structure represented by the formula (I) is excellent in stability, and the organic compound (a) having this structure makes it possible to obtain a film having excellent insulation and heat resistance. . Furthermore, in addition to the structure represented by the formula (I), the structure represented by the formulas (X1) and (X2) is also preferable because a film having more excellent insulation and heat resistance can be obtained. The structure represented by the formulas (X1) and (X2) is preferably contained in an amount of 0.1 to 3.0 mol with respect to 1 mol of the formula (I).

  Examples of such an organic compound (a) include epoxy compounds, acrylic compounds, phenol compounds, benzoxazole compounds, imide compounds, cyanate compounds, polyorganosiloxane compounds, and the like. Of these, polyorganosiloxane compounds are particularly preferred from the viewpoints of insulation, heat and light stability.

The polyorganosiloxane compound is not particularly limited as long as it is a compound composed of a siloxane unit (Si—O—Si) and an organic group X composed of C, H, N, O, and S as constituent elements, Of these, those having a functional group such as an epoxy group or an imide group are also polyorganosiloxane compounds. Of the siloxane units in these compounds, the higher the content of T units (XSiO _3/2 ) or Q units (SiO _4/2 ) in the constituents, the higher the film obtained, the higher the hardness and the better the heat resistance reliability. Also, the higher the content of M units (X ₃ SiO _1/2 ) or D units (X ₂ SiO _2/2 ), the more preferable the film is because it provides a more flexible and low stress film.

  As a method for introducing the polyorganosiloxane having the structure represented by the formula (I), it can be obtained by subjecting a polysiloxane compound having a SiH group and monoallyl isocyanurate to a hydrosilylation reaction.

  As a method for introducing a polyorganosiloxane having a structure represented by the formula (2), a polysiloxane compound having a SiH group, triallyl isocyanurate, diallyl isocyanurate, diallyl monoglycidyl isocyanurate, monoallyl diglycidyl isocyanurate, It can be obtained by a hydrosilylation reaction with an isocyanuric ring-containing compound having a double bond having hydrosilylation reactivity in the structure, such as tris (2- (meth) acryloyloxyethyl) isocyanurate.

  As the polysiloxane compound having a SiH group, a cyclic polyorganosiloxane compound having a SiH group represented by (II) can be preferably used.

  The thickness of the film formed using the film forming composition of the present invention is preferably 10 nm to 20 μm, and more preferably 20 nm to 10 μm.

  As the organic compound (a) of the present invention, a curable composition in which a crosslinking reaction proceeds by external energy such as heat or light may be used. In this case, a film having high insulation and stability based on a high-density cross-linked structure can be obtained.

  Although it does not specifically limit as a crosslinking reaction form, Cationic polymerization reaction, radical polymerization reaction, hydrosilylation reaction, polycondensation reaction etc. can be mentioned, and it can be said that a crosslinking reaction can advance efficiently with small energy. From the viewpoint, cationic polymerization reaction and hydrosilylation reaction are preferable. Moreover, you may have two or more types of bridge | crosslinking among these.

  As the curable composition in which the cationic polymerization reaction proceeds, a polymerizable compound having at least one cationic polymerizable functional group in the molecule is used. Examples of the cationic polymerizable functional group include an epoxy group, an oxetanyl group, a crosslinkable silicon group, a vinyl ether group, an episulfide group, and an ethyleneimine group. Of these, compounds having an epoxy group are preferably used. Among the epoxy groups, an alicyclic epoxy group or a glycidyl group is preferable from the viewpoint of stability, and an alicyclic epoxy group is particularly preferable in terms of excellent polymerizability.

  As the curable composition in which the hydrosilylation reaction proceeds, a combination of a compound having a carbon-carbon double bond and a compound having a SiH group is used. The compound having a carbon-carbon double bond is not particularly limited as long as it has at least one carbon-carbon double bond in one molecule, and is not particularly limited regardless of a polysiloxane compound or an organic compound. It can be used without. Specifically, triallyl isocyanurate, diallyl isocyanurate, monoallyl isocyanurate, diallyl monoglycidyl isocyanurate, monoallyl diglycidyl isocyanurate, tris (2- (meth) acryloyloxyethyl) isocyanurate can be suitably used. .

When the curable composition is used as the organic compound (a) of the present invention, a polymerization initiator or a catalyst corresponding to the crosslinking type of the curable composition can be used for the film-forming composition.
As a polymerization initiator in the case of cationic polymerization, an active energy ray cationic polymerization initiator that generates a cationic species or a Lewis acid by active energy rays, or a thermal cationic polymerization initiator that generates a cationic species or a Lewis acid by heat is used. be able to. Particularly preferred active energy ray cationic polymerization initiators include arylsulfonium complex salts, aromatic sulfonium or iodonium salts of halogen-containing complex ions, and aromatic onium salts of Group II, Group V and Group VI elements.

  Some of these salts are FX-512 (manufactured by 3M), UVR-6990 and UVR-6974 (manufactured by Union Carbide), UVE-1014 and UVE-1016 (manufactured by General Electric), KI-85. (Degussa), SP-152 and SP-172 (Asahi Denka), Sun-Aid SI-60L, SI-80L and SI-100L (Sanshin Chemical), WPI113 and WPI116 (Wako Pure Chemical Industries) Manufactured), RHODORSIL PI2074 (manufactured by Rhodia), and BBI-103 (manufactured by Midori Chemical).

  As the polymerization initiator in the case of radical polymerization, an active energy ray radical polymerization initiator that generates radical species by active energy rays can be used.

As the catalyst for the hydrosilylation reaction, for example, the following can be used. Platinum simple substance, alumina, silica, carbon black or the like supported on solid platinum, chloroplatinic acid, a complex of chloroplatinic acid and alcohol, aldehyde, ketone or the like, platinum-olefin complex (for example, Pt (CH _{2 = CH 2) 2 (PPh} 3) 2, Pt (CH 2 = CH 2) 2 Cl 2), platinum - vinylsiloxane complex _{(e.g., Pt (ViMe 2 SiOSiMe 2 Vi} ) n, Pt [(MeViSiO) 4] _m ), a platinum-phosphine complex (eg, Pt (PPh ₃ ) ₄ , Pt (PBu ₃ ) ₄ ), a platinum-phosphite complex (eg, Pt [P (OPh) ₃ ] ₄ , Pt [P (OBu) ₃ ] ₄₎ (in the formula, Me represents a methyl group, Bu a butyl group, Vi is vinyl group, Ph represents a phenyl group, n, m is an integer.), Jikaruboni Dichloroplatinum, Karstedt catalyst, and platinum-hydrocarbon complexes described in Ashby US Pat. Nos. 3,159,601 and 3,159,622, and Lamoreaux, US Pat. No. 3,220,972. Examples include platinum alcoholate catalysts described in the text.

  In addition, platinum chloride-olefin complexes described in Modic US Pat. No. 3,516,946 are also useful in the present invention.

  In particular, a photocurable composition in which a crosslinking reaction proceeds by light among curable compositions is useful because the curing reaction can be performed in a short time. The crosslinking type of such a photocurable composition is not particularly limited, and the same type as the above curable composition can be used. It is activated by light among the above polymerization initiator and catalyst, and radicals or cationic species are selected. Photo-curability can be imparted by combining with a generated photopolymerization initiator.

  Moreover, the organic compound (a) of the present invention can have alkali developability by having a structure represented by the formula (I). Therefore, industrially useful lithography properties can be obtained by imparting photocurability.

As the organic compound (a) of the present invention, when a polyorganosiloxane compound is used, the following embodiments are preferable.
The hydrosilylation reaction product of the following compounds (α) and (β) and, if necessary, (γ):
(Α) An organic compound having a carbon-carbon double bond having reactivity with a SiH group.
(Β) An organosiloxane compound having a SiH group.
(Γ), Compound Having Photopolymerizable Functional Group and Carbon-Carbon Double Bond Reactive with SiH Group Hereinafter, preferred embodiments of the polyorganosiloxane compound will be described.

  As these compounds (α), (β), and (γ), one type of compound corresponding to each may be used, or a plurality of types of compounds may be used as necessary.

The compound (α) will be described.
The compound (α) is not limited as long as it is a compound having a carbon-carbon double bond having reactivity with the SiH group.

  In particular, a compound having a structure represented by the formula (I) is preferably used as the compound (α) and introduced into the organic compound (a). Specifically, monoallyl isocyanuric acid is mentioned from the viewpoint of availability. Moreover, it is preferable to use together the compound which has a structure represented by Formula (X1) and (X2) from a viewpoint that it is excellent in the heat resistance of the film | membrane obtained, and insulation. Specific examples include triallyl isocyanurate, diallyl isocyanurate, diallyl monoglycidyl isocyanurate, monoallyl diglycidyl isocyanurate, and tris (2- (meth) acryloyloxyethyl) isocyanurate.

  Further, from the viewpoint of excellent transparency of the obtained film, it is preferable to use it together with a polysiloxane compound having an alkenyl group. Particularly, from the viewpoint of availability, a poly or oligosiloxane whose end is blocked with a dimethylvinylsilyl group, specifically 1,3,5,7-vinyl-1,3,5,7-tetramethylcyclotetrasiloxane, 1-propyl-3,5,7-trivinyl-1,3,5,7-tetramethylcyclotetrasiloxane, 1,5-divinyl-3,7-dihexyl-1,3,5,7-tetramethylcyclotetrasiloxane, 1,3,5-trivinyl-trimethylcyclosiloxane, 1,3,5,7,9-pentavinyl- 1,3,5,7,9-pentamethylcyclosiloxane, 1,3,5,7,9,11-hexavinyl-1,3,5,7,9,11-hexameth Cyclic siloxane compounds such as Le cyclosiloxanes are preferred.

The compound (β) will be described.
The compound (β) is not particularly limited as long as it is an organopolysiloxane compound having at least two SiH groups in one molecule. For example, compounds having at least two SiH groups in one molecule can be used.

  Among these, from the viewpoint of availability and reactivity with the compounds (α) and (γ), it is further represented by (II) a cyclic organo group having at least three SiH groups in one molecule. Polysiloxane is preferred.

The substituents R ² and R ³ in the compound represented by the general formula (II) may be any organic group having 1 to 10 carbon atoms, but are preferably a hydrocarbon group, and more preferably a methyl group. preferable.

The compound represented by the general formula (II) is preferably 1,3,5,7-tetramethylcyclotetrasiloxane from the viewpoint of availability and reactivity.
The various compounds (β) described above can be used alone or in combination of two or more.

The compound (γ) will be described.
The compound (γ) is not particularly limited as long as it is a compound having at least one photopolymerizable functional group and at least one carbon-carbon double bond having reactivity with a SiH group in one molecule.

  Examples of the photopolymerizable functional group include an epoxy group, an alkoxysilyl group, a vinyl ether group, a (meth) acryloyl group, an oxetanyl group, etc. From the viewpoint of reactivity and compound stability, At least one is preferably an epoxy group.

  Specific examples of the compound (γ) having an epoxy group as a photopolymerizable functional group include vinylcyclohexene oxide, allyl glycidyl ether, diallyl monoglycidyl isocyanurate, monoallyl diglycidyl isocyanurate, and the like. From the viewpoint of superiority, vinylcyclohexene oxide, which is a compound having an alicyclic epoxy group, is particularly preferable.

  Moreover, in the case of hydrosilylation reaction, 2 or more types of compounds ((gamma)) can also be used together regardless of the kind of photopolymerizable functional group.

Such a photopolymerizable functional group is preferably contained in the polyorganosiloxane compound in an amount of 0.1 to 50 mmol / g, and more preferably 0.3 to 30 mmol / g.
When the content is small, curing becomes insufficient, and when the content is too large, the stability of the film-forming composition is deteriorated.

(Hydrosilylation catalyst)
The catalyst for synthesizing a polyorganosiloxane compound by hydrosilylation reaction using the compound (α), compound (β) and compound (γ) is the same as the hydrosilylation catalyst added to the film forming liquid. Can be used.

(Reaction of compound (α), compound (β) and compound (γ))
As described above, the polyorganosiloxane compound that can be used in the photocurable composition of the present invention is a reaction of the compound (α), the compound (β), and the compound (γ) in the presence of a hydrosilylation catalyst. The compound obtained by this is mentioned.

  When the compound (α), the compound (β), and the compound (γ) are reacted, an excess of the compound (α) and the compound (β) or an excess of the compound (β) and the compound (α) is hydrosilylated. It is preferable from the viewpoint that it is difficult to contain a low-molecular-weight substance once the unreacted compound (α) or compound (β) is removed and the resulting reaction product and compound (γ) are hydrosilylated after the reaction. .

  The reaction temperature can be variously set. In this case, the lower limit of the preferable temperature range is 30 ° C., more preferably 50 ° C., and the upper limit of the preferable temperature range is 200 ° C., more preferably 150 ° C. If the reaction temperature is low, the reaction time for sufficiently reacting becomes long, and if the reaction temperature is high, it is not practical. The reaction may be carried out at a constant temperature, but the temperature may be changed in multiple steps or continuously as required.

Various reaction times and pressures during the reaction can be set as required.
Oxygen can be used during the hydrosilylation reaction. The hydrosilylation reaction can be promoted by adding oxygen to the gas phase portion of the reaction vessel. From the point of setting the amount of oxygen to be below the lower limit of explosion limit, the oxygen volume concentration in the gas phase must be controlled to 3% or less. In view of promoting the hydrosilylation reaction effect by the addition of oxygen, the oxygen volume concentration in the gas phase is preferably at least 0.1%, more preferably at least 1%.

  A solvent may be used during the hydrosilylation reaction. Solvents that can be used are not particularly limited as long as they do not inhibit the hydrosilylation reaction. Specific examples include hydrocarbon solvents such as benzene, toluene, hexane, heptane, tetrahydrofuran, 1,4-dioxane, 1, Ether solvents such as 3-dioxolane and diethyl ether, ketone solvents such as acetone and methyl ethyl ketone, and halogen solvents such as chloroform, methylene chloride and 1,2-dichloroethane can be preferably used. The solvent can also be used as a mixed solvent of two or more types. As the solvent, toluene, tetrahydrofuran, 1,3-dioxolane and chloroform are preferable. The amount of solvent to be used can also be set as appropriate.

After the compound (α), the compound (β) and the compound (γ) are hydrosilylated, the solvent and / or the unreacted compound can be removed. By removing these volatile components, the reaction product obtained does not have volatile components. Therefore, when creating a cured product using the reaction product, problems of voids and cracks due to volatilization of volatile components are unlikely to occur. . Examples of the removal method include vacuum devolatilization. When devolatilizing under reduced pressure, it is preferable to treat at a low temperature. The upper limit of the preferable temperature in this case is 100 ° C, more preferably 80 ° C. When treated at high temperatures, it tends to be accompanied by alterations such as thickening.
In the above production method of the organopolysiloxane compound as the cationically polymerizable compound of the present invention, various additives can be used depending on the purpose.

  The organic solvent (b) of the present invention may be used alone or in combination of two or more. The amount of the organic solvent (b) in the film forming liquid is preferably 10 to 90 parts by weight, more preferably 30 to 80 parts by weight, based on 100 parts by weight of the whole film forming liquid. When there is little organic solvent (b), the viscosity of the composition for film formation will become high, and film formability will deteriorate.

  The type of the solvent is not particularly limited, but specific examples include hydrocarbon solvents such as benzene, toluene, hexane and heptane, ethers such as tetrahydrofuran, 1,4-dioxane, 1,3-dioxolane and diethyl ether. Solvents, ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, glycol solvents such as propylene glycol-1-monomethyl ether-2-acetate (PGMEA), ethylene glycol diethyl ether, chloroform, methylene chloride, 1, 2 -Halogen solvents such as dichloroethane, propylene carbonate, dimethyl sulfoxide, and acetonitrile can be preferably used.

  Among them, when used for an insulating film of an organic semiconductor element, damage to the organic semiconductor film can be further reduced. Particularly preferred are propylene carbonate, dimethyl sulfoxide and acetonitrile. When these three kinds of organic solvents are used in combination with other organic solvents, the content of the other organic solvents is preferably 20 parts by weight or less with respect to the three kinds of organic solvents, from the viewpoint of damage to the organic semiconductor film. 10 parts by weight or less is more preferable.

The method for preparing the film forming composition of the present invention is not particularly limited, and can be prepared by various methods. Various components may be mixed and prepared immediately before film formation, or may be stored at a low temperature in a one-component state in which all components are mixed and prepared in advance.
The film forming composition of the present invention may be subjected to viscosity adjustment with a solvent and surface tension adjustment with a surfactant as appropriate according to the state of the substrate.

  Moreover, when making the organic compound (a) of this invention harden | cure by making a crosslinking reaction advance by light irradiation, as a light source for carrying out photocuring, the light source which light-emits the absorption wavelength of the polymerization initiator and sensitizer to be used. Can be used, and a light source usually having a wavelength in the range of 200 to 450 nm, such as a high-pressure mercury lamp, an ultra-high pressure mercury lamp, a metal halide lamp, a high-power metal halide lamp, a xenon lamp, a carbon arc lamp, or a light-emitting diode can be used. .

The exposure amount is not particularly limited, but a preferable exposure amount range is 1-1000 mJ / cm ² , more preferably 1-500 mJ / cm ² , and further preferably 1-300 mJ / cm ² . If the exposure amount is small, the surface becomes rough, the film thickness decreases, and the pattern edge portion is chipped.
If the exposure amount is large, the color may change due to rapid curing.

  After film formation, it is preferable to heat from the viewpoint of evaporation of the solvent, acceleration of curing reaction, and the like. Although the heating temperature is not particularly limited, it is preferably 200 ° C. or less from the viewpoint that the influence on the surrounding low heat-resistant member is small, and in particular when using a resin substrate or the like, dimensional stability Considering properties and the like, it is preferably 180 ° C. or lower.

  The organic compound (a) of the present invention can be finely patterned by alkali development. The patterning formation is not particularly limited, and a desired pattern can be formed by dissolving / removing the unexposed portion by a commonly used developing method such as an immersion method or a spray method.

  The developer can be used without particular limitation as long as it is generally used. Specific examples thereof include organic alkali aqueous solutions such as tetramethylammonium hydroxide aqueous solution and choline aqueous solution, potassium hydroxide aqueous solution, sodium hydroxide. Examples thereof include inorganic aqueous alkali solutions such as aqueous solutions, potassium carbonate aqueous solutions, sodium carbonate aqueous solutions, and lithium carbonate aqueous solutions, and those obtained by adding alcohol or a surfactant to these aqueous solutions in order to adjust the dissolution rate.

  Further, the aqueous solution concentration of the developer is preferably 25 parts by weight or less, more preferably 10 parts by weight or less, and still more preferably 5 parts by weight or less, from the viewpoint that the contrast between the exposed part and the unexposed part is easily obtained. Preferably there is.

(About additives)
Various additives can be added to the film-forming composition of the present invention as necessary.

(Sensitizer)
In the film-forming composition of the present invention, when the organic compound (b) is cured with light energy, the sensitivity of light is improved, and g-line (436 nm), h-line (405 nm), i-line (365 nm) In order to give sensitivity to light having a high wavelength as mentioned, a sensitizer can be appropriately added. Examples of the compound to be added include anthracene compounds and thioxanthone compounds.

  Specific examples of the anthracene compound include anthracene, 2-ethyl-9,10-dimethoxyanthracene, 9,10-dimethylanthracene, 9,10-dibutoxyanthracene, 9,10-dipropoxyanthracene, and 9,10-di. Ethoxyanthracene, 1,4-dimethoxyanthracene, 9-methylanthracene, 2-ethylanthracene, 2-tert-butylanthracene, 2,6-di-tert-butylanthracene, 9,10-diphenyl-2,6-di- tert-butylanthracene and the like can be mentioned, and from the viewpoint of easy availability, anthracene, 9,10-dimethylanthracene, 9,10-dibutoxyanthracene, 9,10-dipropoxyanthracene, 9,10-diethoxyanthracene and the like preferable.

  Specific examples of the thioxanthone series include thioxanthone, 2-chlorothioxanthone, 2,5-diethyldioxanthone and the like.

  Anthracene is preferable from the viewpoint of excellent transparency of the cured product, and 9,10-dibutoxyanthracene, 9,10-dipropoxyanthracene, and 9,10-diethoxyanthracene from the viewpoint of excellent compatibility with the curable composition. Etc. are preferred.

  These sensitizers may be used alone or in combination of two or more. The addition amount of the sensitizer is 0.1 to 10 parts by weight with respect to 100 parts by weight of the organic compound (b) from the viewpoints of curing time, sensitizer remaining in the film, colorability and the like. Preferably, it is 0.1 to 5 parts by weight.

(Adhesion improver)
An adhesion improver can also be added to the film-forming composition of the present invention. In addition to commonly used adhesives as adhesion improvers, for example, various coupling agents, epoxy compounds, oxetane compounds, phenol resins, coumarone-indene resins, rosin ester resins, terpene-phenol resins, α-methylstyrene -Vinyl toluene copolymer, polyethyl methyl styrene, aromatic polyisocyanate, etc. can be mentioned.

  An example of the coupling agent is a silane coupling agent. The silane coupling agent is not particularly limited as long as it is a compound having at least one functional group reactive with an organic group and one hydrolyzable silicon group in the molecule. The group reactive with the organic group is preferably at least one functional group selected from an epoxy group, a methacryl group, an acrylic group, an isocyanate group, an isocyanurate group, a vinyl group, and a carbamate group from the viewpoint of handling. From the viewpoints of adhesion and adhesiveness, an epoxy group, a methacryl group, and an acrylic group are particularly preferable. As the hydrolyzable silicon group, an alkoxysilyl group is preferable from the viewpoint of handleability, and a methoxysilyl group and an ethoxysilyl group are particularly preferable from the viewpoint of reactivity.

  Preferred silane coupling agents include 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 2- (3,4- Epoxycyclohexyl) alkoxysilanes having an epoxy functional group such as ethyltriethoxysilane: 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-acryloxypropyltrimethoxysilane, 3-acryloxypropyl Methacrylic or acrylic groups such as triethoxysilane, methacryloxymethyltrimethoxysilane, methacryloxymethyltriethoxysilane, acryloxymethyltrimethoxysilane, acryloxymethyltriethoxysilane Alkoxysilanes which can be exemplified.

  The amount of the silane coupling agent can be variously set, but is preferably 0.1 to 20 parts by weight, more preferably 0.3 to 10 parts by weight, and still more preferably, with respect to 100 parts by weight of the organic compound (b). 0.5 to 5 parts by weight. If the addition amount is small, the effect of improving the adhesiveness does not appear, and if the addition amount is large, the physical properties of the film may be adversely affected. These coupling agents, silane coupling agents, epoxy compounds and the like may be used alone or in combination of two or more.

(Phosphorus compound)
In the case where the organic compound (a) of the present invention is cured by light or heat and used in applications where the film requires transparency, a film-forming composition is used to improve the hue after curing by light or heat. It is preferable to add a phosphorus compound to the product. Specific examples of phosphorus compounds include triphenyl phosphite, diphenylisodecyl phosphite, phenyl diisodecyl phosphite, tris (nonylphenyl) phosphite, diisodecylpentaerythritol diphosphite, tris (2,4-di-t-butyl). Phenyl) phosphite, cyclic neopentanetetrayl bis (octadecyl phosphite), cyclic neopentane tetrayl bis (2,4-di-t-butylphenyl) phosphite, cyclic neopentane tetrayl bis (2, Phosphites such as 6-di-t-butyl-4-methylphenyl) phosphite, bis [2-t-butyl-6-methyl-4- {2- (octadecyloxycarbonyl) ethyl} phenyl] hydrogen phosphite An antioxidant selected from the group 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide, 10- (3,5-di-t-butyl-4-hydroxybenzyl) -9,10-dihydro-9-oxa- Coloring agents selected from oxaphosphaphenanthrene oxides such as 10-phosphaphenanthrene-10-oxide, 10-decyloxy-9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide are preferably used. Is done.

  The amount of the phosphorus compound used is preferably 0.01 to 10 parts by weight, more preferably 0.1 to 5 parts by weight with respect to 100 parts by weight of the organic compound (b). If the amount of the phosphorus compound used is small, the effect of improving the hue decreases. If the amount used is increased, the physical properties of the film may be adversely affected.

(Filler)
You may add a filler to the composition for film formation of this invention as needed.
Various fillers are used. For example, silica-based fillers such as quartz, fume silica, precipitated silica, silicic anhydride, fused silica, crystalline silica, ultrafine powder amorphous silica, silicon nitride, silver powder, etc. Inorganic fillers such as alumina, aluminum hydroxide, titanium oxide, glass fiber, carbon fiber, mica, carbon black, graphite, diatomaceous earth, clay, clay, talc, calcium carbonate, magnesium carbonate, barium sulfate, inorganic balloon As a filler for a conventional sealing material such as an epoxy type, a filler that is generally used or / and proposed can be used.

(Anti-aging agent)
An antioxidant may be added to the film-forming composition of the present invention. Examples of the anti-aging agent include citric acid, phosphoric acid, sulfur-based anti-aging agent and the like in addition to the anti-aging agents generally used such as hindered phenol type.

  As the hindered phenol-based anti-aging agent, various types such as Irganox 1010 available from Ciba Specialty Chemicals are used.

  Sulfur-based antioxidants include mercaptans, mercaptan salts, sulfide carboxylic acid esters, sulfides including hindered phenol sulfides, polysulfides, dithiocarboxylates, thioureas, thiophosphates, sulfonium Examples thereof include compounds, thioaldehydes, thioketones, mercaptals, mercaptols, monothioacids, polythioacids, thioamides, and sulfoxides. These anti-aging agents may be used alone or in combination of two or more.

(Radical inhibitor)
A radical inhibitor may be added to the film-forming composition of the present invention. Examples of the radical inhibitor include 2,6-di-t-butyl-3-methylphenol (BHT), 2,2′-methylene-bis (4-methyl-6-t-butylphenol), tetrakis (methylene- Phenol radical inhibitors such as 3 (3,5-di-t-butyl-4-hydroxyphenyl) propionate) methane, phenyl-β-naphthylamine, α-naphthylamine, N, N′-secondary butyl-p- Examples include amine radical inhibitors such as phenylenediamine, phenothiazine, N, N′-diphenyl-p-phenylenediamine, and the like. These radical inhibitors may be used alone or in combination of two or more.

(UV absorber)
An ultraviolet absorber may be added to the film forming composition of the present invention. Examples of the ultraviolet absorber include 2 (2′-hydroxy-3 ′, 5′-di-t-butylphenyl) benzotriazole, bis (2,2,6,6-tetramethyl-4-piperidine) sebacate and the like. Can be mentioned. These ultraviolet absorbers may be used alone or in combination of two or more.

(Other additives)
The film-forming composition of the present invention includes other colorants, mold release agents, flame retardants, flame retardant aids, surfactants, antifoaming agents, emulsifiers, leveling agents, anti-fogging agents, antimony-bismuth and the like. Ion trap agent, thixotropic agent, tackifier, storage stability improver, ozone degradation inhibitor, light stabilizer, thickener, plasticizer, reactive diluent, antioxidant, heat stabilizer, conductivity The purpose and effect of the present invention include a property imparting agent, an antistatic agent, a radiation shielding agent, a nucleating agent, a phosphorus peroxide decomposing agent, a lubricant, a pigment, a metal deactivator, a thermal conductivity imparting agent, and a physical property modifier. Can be added within a range that does not impair.

(About thin film transistors)
The thin film transistor obtained by using the curable composition obtained in the present invention as an insulating film refers to a field effect transistor (FET), a three-terminal type formed from a source, a drain, and a gate electrode, and a four-terminal including a back gate. A thin film transistor which is a type transistor and controls a current between a source and a drain by an electric field of a channel generated by applying a voltage to a gate electrode.

  As for the thin film transistor structure, there are various combinations and arrangements depending on the display device structure to be applied, such as bottom gate type, top gate type, and source / drain electrode arrangement with respect to the arrangement of the gate electrode, such as bottom contact type and top contact type. Design is possible, and the structure is not particularly limited.

  Various types of thin film transistor semiconductor layers have been proposed, including silicon-based semiconductors such as amorphous silicon (aSi), polysilicon (pSi), and microcrystalline silicon (μ-cSi), and oxides such as ZnO and InGaZnO. Typical examples include organic semiconductors, organic semiconductors using compounds such as pentacene, oligothiophene, and phthalocyanine, and carbon-based semiconductors using carbon nanotubes, graphene, fullerenes, and the like. Among these, those using an organic semiconductor are preferable from the viewpoint of being a low-temperature process and being easily formed on a plastic film.

  Moreover, regarding the method for forming the semiconductor layer, various methods such as CVD, sputtering, vapor deposition, and coating have been proposed and are not particularly limited. It is preferable that it can be formed by sputtering, vapor deposition, or coating method from the viewpoint of easy formation on a plastic film in a low temperature process, and it is formed by coating method from the viewpoint of cost merit because it can be mass-produced using a simple process such as a printing process. What can be done is more preferable.

  Regarding the electrode material, it can be used without any particular limitation, but it can be easily obtained, such as Au, Al, Pt, Mo, Ti, Cr, Ni, Cu, ITO, PEDOT / PSS, etc., conductive polymer, conductive paste Metal ink or the like is preferably used. Al, Mo, Ti, Cr, Ni, Cu and the like are preferable because of low resistance and high conductivity, and ITO and PEDOT / PSS are preferable from the viewpoint of being applicable to places where transparency is required. Au and Pt are preferable from the viewpoint that the surface is hardly oxidized and excellent in stability, and conductive polymers such as PEDOT / PSS, conductive paste, and metal ink are preferably used because they can be formed by a printing process.

  Typical application parts of the insulating film using the film forming composition of the present invention include a gate insulating film formed between the gate electrode and the semiconductor, and a passivation film formed so as to cover the entire element. Can do.

(Method of forming insulating film)
The insulating film using the film-forming composition of the present invention has a simpler manufacturing process than CVD and sputtering, and can be formed by a coating method advantageous in terms of cost. Specifically, the film can be formed by a method such as spin coating, dip coating, roll coating, screen coating, spray coating, spin casting, flow coating, screen printing, inkjet or drop casting. Further, viscosity adjustment with a solvent and surface tension adjustment with a surfactant may be appropriately performed in accordance with the state of the substrate on which the film is formed.

  In general, when a thin film transistor is formed using an organic semiconductor, a passivation film is formed on the organic semiconductor film in the bottom gate structure, and a gate insulating film is formed on the organic semiconductor film in the top gate structure. When these compositions for forming an insulating film are applied onto an organic semiconductor film by a coating method, damage such as a structural change to the organic semiconductor may occur, and transistor characteristics may be greatly deteriorated. Therefore, in order to obtain a thin film transistor with good characteristics, it is important to reduce the structural change of the organic semiconductor film before and after the application of the insulating film forming composition.

  The thin film transistor manufactured using the film forming composition of the present invention can be used as a pixel transistor in an active matrix flat panel display. At this time, in order to drive the display stably, the threshold voltage and the ON / OFF ratio are cited as important characteristics as transistor characteristics.

The threshold voltage mentioned here indicates a voltage value at which a transistor starts to be turned on and a current starts to flow through the semiconductor layer. In the current transfer characteristics of the transistor, the current Id flowing between the source / drain and the gate applied voltage Vg (Id) ) Calculated from the intersection of the extension of the linear portion and the Vg axis in the graph between ^1/2 and Vg. From the viewpoint of reducing power consumption for driving the transistor, it is preferably −14 to 14V, more preferably −12 to 12V.

The ON / OFF current ratio is expressed as a ratio (Ion / Ioff) of the maximum current value and the minimum current value of the current Id flowing between the source and the drain in the current transfer characteristic of the transistor. It is preferably 1.0 × 10 ² or more, and more preferably 5.0 × 10 ² or more, since it shows superiority and enables driving of a method requiring a large current for driving.

  Examples and Comparative Examples of the present invention are shown below, but the present invention is not limited to the following.

(Evaluation of organic semiconductor film structure change)
Structural changes when the film forming compositions prepared as in Examples 1 to 4 and Comparative Example 1 were applied on the organic semiconductor film were evaluated by UV spectrum.

A 6.13-bis (triisopropylsilylethynyl) pentacene (TIPS pentacene) solution (0.5% chloroform solution) was applied to a glass substrate by spin coating, and heated on a hot plate at 100 ° C. for 10 minutes to form an organic semiconductor film. The film-forming composition was applied thereon by spin coating under the conditions of 2000 rpm and 20 sec, and heated on a hot plate at 150 ° C. for 1 hour to form an insulating film.
The UV spectrum was measured with a UV-visible spectrophotometer (JASCO JSV 560 manufactured by JASCO Corporation) for light transmittance of 250 to 800 nm in air.

  The film forming compositions of Examples 1 to 4 and Comparative Example 1 were applied on the TIPS pentacene film, heated on a hot plate at 150 ° C. for 1 hour, and then measured for UV spectrum, and the TIPS pentacene film had a maximum peak. The decrease rate of the absorption intensity at a wavelength of 335 nm was calculated. In addition, absorption was hardly recognized by the film | membrane obtained by apply | coating the composition for film formation of Examples 1-4 and the comparative example 1 on glass, and heating. The UV spectrum of the TIPS pentacene film is shown in FIG. 1, and the calculation result of the reduction rate of the absorption intensity at the wavelength of 335 nm is shown in Table 1.

  As can be seen from this result, by using the film forming composition of the present invention, damage when an insulating film is provided on the organic semiconductor film can be reduced.

(Production of thin film transistors)
A gate electrode having a thickness of 500 mm was formed on a glass substrate using aluminum (Al), and a polyimide resin was applied thereon by spin coating to form a gate insulating film having a thickness of 1 μm. Further, a pentacene organic semiconductor film having a thickness of 500 mm was formed by vapor deposition, and a source / drain Au electrode having a thickness of 300 mm was formed thereon by vapor deposition using a mask having a channel length of 100 μm and a channel width of 5 mm.

  Further, a film-forming composition was applied from above by spin coating under the conditions of 2000 rpm and 20 sec, heated on a hot plate at 65 ° C. for 5 minutes, and exposed to light (high pressure mercury lamp, mask alignment device MA-10 manufactured by Mikasa Co., Ltd.). ) Through a 50 μm square pattern mask (proximity exposure, gap 12 μm), and heated on a hot plate at 65 ° C. for 2 minutes to 60% alkaline developer (TMAH 2.38% aqueous solution). After dipping for 2 seconds, it was washed with water for 60 seconds to form a 50 μm square contact hole. Further, post-baking was performed at 150 ° C. to form a passivation film having a thickness of 2.0 μm, and a thin film transistor was manufactured.

(Transistor characteristic evaluation)
About the thin-film transistor created as mentioned above using the film forming composition of this invention, the current transfer characteristic was evaluated using the semiconductor parameter analyzer (Agilent 4156). With the voltage of −40 V applied between the source / drain, the amount of current (Id) between the source and drain when applied to the gate electrode at 20 to −40 V was plotted to obtain the transfer characteristics. Table 1 shows the result of calculating the transistor characteristics from the obtained current transfer characteristic curve by the following method.

  From this result, it can be seen that a thin film transistor having excellent current characteristics can be obtained by the film forming composition of the present invention.

(Threshold voltage)
It was calculated from the intersection of the extension line of the linear region and the Vg axis from the curve between (Id) ^1/2 and Vg when the current Id flowing between the source / drain and the gate applied voltage Vg in the current transfer characteristic curve.

(ON / OFF current ratio)
The on-state current Ion is the maximum current value in the saturation region in the current transfer characteristic curve, and the off-state current Ioff is obtained from the off-state minimum current. The ON / OFF current ratio Ion / Ioff was calculated from the ratio between the maximum current value in the on state and the minimum current value in the off state.

(Production Example 1)
Into a 500 mL four-necked flask, put 80 g of toluene, 20 g of 1,4-dioxane, 50 g of 1,3,5,7-tetramethylcyclotetrasiloxane, and after replacing the gas phase with nitrogen, heat and stir at an internal temperature of 105 ° C. did. A mixture of 14.1 g of monoallyl isocyanurate, 70.0 g of 1,4-dioxane, and 0.0163 g of a xylene solution of platinum vinylsiloxane complex (containing 3 wt% as platinum) was added dropwise over 30 minutes. One hour after the completion of the dropwise addition, it was confirmed by ¹ H-NMR that the reaction rate of the allyl group was 95% or more, and the reaction was terminated by cooling. Unreacted 1,3,5,7-tetramethylcyclotetrasiloxane, 1,4-dioxane and toluene were distilled off under reduced pressure to obtain a colorless and transparent liquid “Reactant B1”.

A 100 mL four-necked flask was charged with 20 g of toluene, 5 g of 1,4-dioxane, and 10 g of “Reactant B1”, and the gas phase portion was purged with nitrogen and heated at an internal temperature of 105 ° C. Here, 3.0 g of vinylcyclohexene oxide and A mixed solution of 3.0 g of toluene was added, and 3 hours after the addition, it was confirmed by ¹ H-NMR that the reaction rate of the vinyl group was 95% or more. After cooling the reaction solution, 1,4-dioxane and toluene were distilled off under reduced pressure to obtain “Reaction product 1”. By 1H-NMR measurement, SiH group was converted to 6.1 mmol / g in terms of equivalent when the standard substance was dibromoethane, epoxy group was 2.5 mmol / g, and the structure represented by the formula (I) was 1.8 mmol. / G of polyorganosiloxane compound was confirmed.

(Production Example 2)
Into a 500 mL four-necked flask, put 80 g of toluene, 20 g of 1,4-dioxane, 50 g of 1,3,5,7-tetramethylcyclotetrasiloxane, and after replacing the gas phase with nitrogen, heat and stir at an internal temperature of 105 ° C. did. A mixture of 14.1 g of monoallyl isocyanurate, 70.0 g of 1,4-dioxane, and 0.0163 g of a xylene solution of platinum vinylsiloxane complex (containing 3 wt% as platinum) was added dropwise over 30 minutes. One hour after the completion of the dropwise addition, it was confirmed by ¹ H-NMR that the reaction rate of the allyl group was 95% or more, and the reaction was terminated by cooling. Unreacted 1,3,5,7-tetramethylcyclotetrasiloxane, 1,4-dioxane and toluene were distilled off under reduced pressure to obtain a colorless and transparent liquid “Reactant B2”.

A 100 mL four-necked flask was charged with 20 g of toluene, 10 g of 1,4-dioxane, and 10 g of “Reactant B2”, and the gas phase was replaced with nitrogen and heated at an internal temperature of 105 ° C., where 4.9 g of diallyl isocyanurate was added. 3 hours after addition of 14.9 g of toluene, ¹ H-NMR confirmed that the reaction rate of the vinyl group was 95% or more, and then added a mixture of 3.8 g of vinylcyclohexene oxide and 3.0 g of toluene, and added After 3 hours, it was confirmed by ¹ H-NMR that the reaction rate of the vinyl group was 95% or more. After cooling the reaction solution, 1,4-dioxane and toluene were distilled off under reduced pressure to obtain “Reaction product 2”. By 1 H-NMR measurement, SiH group is 3.0 mmol / g, epoxy group is 1.5 mmol / g in terms of equivalent when the standard substance is dibromoethane, and the structure represented by formula (I) is 1.0 mmol / g. g, a polyorganosiloxane compound having a structure represented by (X1) of 0.5 mmol / g was confirmed.

(Production Example 3)
Into a 500 mL four-necked flask, put 80 g of toluene, 20 g of 1,4-dioxane, 50 g of 1,3,5,7-tetramethylcyclotetrasiloxane, and after replacing the gas phase with nitrogen, heat and stir at an internal temperature of 105 ° C. did. A mixture of 20.1 g of monoallyl isocyanurate, 12.4 g of diallyl isocyanurate, 70.0 g of 1,4-dioxane and 0.0163 g of a platinum vinylsiloxane complex in xylene (containing 3 wt% as platinum) was added dropwise over 30 minutes. did. One hour after the completion of the dropwise addition, it was confirmed by ¹ H-NMR that the reaction rate of the allyl group was 95% or more, and the reaction was terminated by cooling. Unreacted 1,3,5,7-tetramethylcyclotetrasiloxane, 1,4-dioxane and toluene were distilled off under reduced pressure to obtain a colorless and transparent liquid “Reactant B3”.

A 100 mL four-necked flask was charged with 20 g of toluene, 10 g of 1,4-dioxane, and 10 g of “Reactant B3”, and the gas phase was purged with nitrogen and heated at an internal temperature of 105 ° C. 3 hours after adding 2 g of siloxane and 4.0 g of toluene, ¹ H-NMR confirmed that the reaction rate of the vinyl group was 95% or more, and then added 1.8 g of vinylcyclohexene oxide and 2.0 g of toluene. 3 hours after the addition, it was confirmed by ¹ H-NMR that the reaction rate of the vinyl group was 95% or more. After cooling the reaction solution, 1,4-dioxane and toluene were distilled off under reduced pressure to obtain “Reaction product 3”. ^The structure represented by the formula (I) is 3.5 mmol / g of SiH group and 1.8 mmol / g of epoxy group in terms of equivalent when the standard substance is dibromoethane by measurement of ¹ H-NMR. / G, a polyorganosiloxane compound having a structure represented by (X1) of 0.6 mmol / g was confirmed.

(Production Example 4)
Into a 500 mL four-necked flask, put 80 g of toluene, 20 g of 1,4-dioxane, 50 g of 1,3,5,7-tetramethylcyclotetrasiloxane, and after replacing the gas phase with nitrogen, heat and stir at an internal temperature of 105 ° C. did. A mixed liquid of 3.8 g of triallyl isocyanurate, 5.0 g of diallyl isocyanurate, 70.0 g of 1,4-dioxane and 0.0163 g of a platinum vinylsiloxane complex in xylene (containing 3 wt% as platinum) is dropped over 30 minutes. did.
One hour after the completion of the dropwise addition, it was confirmed by ¹ H-NMR that the reaction rate of the allyl group was 95% or more, and the reaction was terminated by cooling. Unreacted 1,3,5,7-tetramethylcyclotetrasiloxane and toluene were distilled off under reduced pressure to obtain a colorless and transparent liquid “Reactant B4”.

A 100 mL four-necked flask was charged with 30 g of toluene and 10 g of “Reactant B4”, the gas phase was replaced with nitrogen, and then heated at an internal temperature of 105 ° C. A mixed solution of 3.0 g of vinylcyclohexene oxide and 3.0 g of toluene. 3 hours after the addition, it was confirmed by ¹ H-NMR that the reaction rate of the vinyl group was 95% or more. After cooling the reaction solution, 1,4-dioxane and toluene were distilled off under reduced pressure to obtain “Reaction product 4”. According to the measurement of 1H-NMR, the equivalent structure when the standard substance was dibromoethane was converted to an equivalent equivalent of 3.5 mmol / g of SiH group, 2.0 mmol / g of epoxy group, and 0.5 mmol of the structure represented by (X1). / G, a polyorganosiloxane compound having a structure represented by (X2) of 1.0 mmol / g was confirmed. In addition, it does not have the structure represented by Formula (I).

(Example 1)
Film formation using 5 g of “reactant 1” as organic compound (b), 10 g of propylene carbonate, 0.02 g of BBI-103 (manufactured by Midori Chemical, cationic polymerization initiator), 0.01 g of 9,10-dipropoxyanthracene The composition was adjusted.

(Examples 2 to 4, Comparative Example 1)
A film-forming composition was prepared in the same manner as in Example 1 except that the organic solvent (a) and the organic compound (b) were changed as shown in Table 1.
PGMEA is an abbreviation for propylene glycol-1-monomethyl ether-2-acetate, and DMSO is an abbreviation for dimethyl sulfoxide.

Claims (11)

An essential component is (a) a film forming composition containing an organic compound containing 0.6 mmol / g or more of the structure represented by the following formula (I), and (b) an organic solvent ,

The film forming composition wherein the organic compound (a) is any one of an epoxy compound, an acrylic compound, a phenol compound, a benzoxazole compound, an imide compound, a cyanate compound, and a polyorganosiloxane compound. The film-forming composition according to claim 1, wherein the organic solvent (b) contains at least one selected from propylene carbonate, acetonitrile, and dimethyl sulfoxide. Organic compound (a) film forming composition according to claim 1 or 2 having curability. The film-forming composition according to any one of claims 1 to 3 , wherein the organic compound (a) has photocurability. The film-forming composition according to any one of claims 1 to 4 , wherein the organic compound (a) is a compound that is cured by at least one of a cationic polymerization and a hydrosilylation reaction. The film-forming composition according to any one of claims 1 to 5 , wherein the organic compound (a) has a structure represented by the following formula (X1) or (X2).

(Wherein R ¹ represents an element other than a hydrogen atom may be the same even if each R ¹ is different) Hydrosilylation reaction product of organic compound (a), (α) a compound having a carbon-carbon double bond having reactivity with SiH group in one molecule, and (β) an organosiloxane compound having SiH group and characterized in that, the film forming composition according to any one of claims 1-6. The film forming composition according to claim 7 , wherein the compound (α) is a compound having a Si—CH═CH ₂ group. Compound (β) is represented by the following general formula (II)

(Wherein R ² and R ³ represent an organic group having 1 to 10 carbon atoms, which may be the same or different, n represents 1 to 10, and m represents a number of 0 to 10). The film-forming composition according to claim 8 , which is a cyclic polyorganosiloxane compound having a group. Organic compound (a) is, (α), (β) and, (gamma) 1 and a photopolymerizable functional group in the molecule, carbon reactive with SiH groups - hydrosilylation of a compound having a carbon double bond The film-forming composition according to claim 8 or 9 , comprising a reactant. A thin film transistor obtained by the film forming composition according to any one of claims 1 to 10 .

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