JP5775325B2 - 波長可変光源 - Google Patents
波長可変光源 Download PDFInfo
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- JP5775325B2 JP5775325B2 JP2011040256A JP2011040256A JP5775325B2 JP 5775325 B2 JP5775325 B2 JP 5775325B2 JP 2011040256 A JP2011040256 A JP 2011040256A JP 2011040256 A JP2011040256 A JP 2011040256A JP 5775325 B2 JP5775325 B2 JP 5775325B2
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- diffraction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1828—Diffraction gratings having means for producing variable diffraction
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08059—Constructional details of the reflector, e.g. shape
- H01S3/08063—Graded reflectivity, e.g. variable reflectivity mirror
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/0813—Configuration of resonator
- H01S3/0815—Configuration of resonator having 3 reflectors, e.g. V-shaped resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
- H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
Description
mλ=2d・sinα …(1)
溝深さ=λ/(2cosθ) …(2)
Claims (5)
- 中心波長が互いに異なる複数の活性層をスタック状に積層した構造を有し、第1端および第2端それぞれから光を出射する量子カスケードレーザと、
前記量子カスケードレーザの前記第1端から出射される光をコリメートする光学系と、
前記光学系によりコリメートされた光が入射され、この入射光のうち特定波長の光を当該入射方向と逆の方向に回折させて前記量子カスケードレーザの前記第1端に帰還させる第1反射部と、
前記量子カスケードレーザの前記第2端から出射される光の一部を反射させ残部を透過させて、前記第1反射部とともに外部共振器を構成する第2反射部と、
を備え、
前記第1反射部は、格子周期が互いに等しく溝深さが互いに異なるブレーズド回折格子であって回折特性が互いに異なり格子面方位が可変である複数個の回折格子を含み、前記複数個の回折格子から選択される何れかの回折格子に前記光学系によりコリメートされた光が回折格子毎に異なる入射角で入射され、その選択された回折格子の回折特性および格子面方位に応じた特定波長の光を当該入射方向と逆の方向に回折させる、
ことを特徴とする波長可変光源。 - 前記第1反射部は、
所定の回転中心軸の周りに回転自在な回転部材の一方の面に前記複数個の回折格子が設けられており、
前記回転部材の回転位置に応じて、前記複数個の回折格子から選択される何れかの回折格子に前記光学系によりコリメートされた光が入射され、その選択された回折格子の格子面方位が設定される、
ことを特徴とする請求項1に記載の波長可変光源。 - 前記第1反射部は、
所定の回転中心軸の周りに回転自在な回転部材の複数個の側面それぞれに回折格子が設けられており、
前記回転部材の回転位置に応じて、前記複数個の回折格子から選択される何れかの回折格子に前記光学系によりコリメートされた光が入射され、その選択された回折格子の格子面方位が設定される、
ことを特徴とする請求項1に記載の波長可変光源。 - 前記第1反射部は、
所定の回転中心軸の周りに回転自在な回転部材の一方の面に前記複数個の回折格子が設けられており、
前記回転部材の前記面上で前記複数個の回折格子をスライドさせることで、前記複数個の回折格子から選択される何れかの回折格子に前記光学系によりコリメートされた光が入射され、
前記回転部材の回転位置に応じて、その選択された回折格子の格子面方位が設定される、
ことを特徴とする請求項1に記載の波長可変光源。 - 前記光学系は放物面鏡であることを特徴とする請求項1に記載の波長可変光源。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011040256A JP5775325B2 (ja) | 2011-02-25 | 2011-02-25 | 波長可変光源 |
US13/369,830 US8594142B2 (en) | 2011-02-25 | 2012-02-09 | Wavelength-tunable light source |
Applications Claiming Priority (1)
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JP2011040256A JP5775325B2 (ja) | 2011-02-25 | 2011-02-25 | 波長可変光源 |
Publications (2)
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JP2012178436A JP2012178436A (ja) | 2012-09-13 |
JP5775325B2 true JP5775325B2 (ja) | 2015-09-09 |
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JP2011040256A Active JP5775325B2 (ja) | 2011-02-25 | 2011-02-25 | 波長可変光源 |
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US (1) | US8594142B2 (ja) |
JP (1) | JP5775325B2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012000038A1 (de) * | 2012-01-03 | 2013-07-04 | Humboldt-Universität Zu Berlin | Lasereinrichtung |
JP5848791B2 (ja) * | 2013-08-06 | 2016-01-27 | 株式会社東芝 | 呼気診断装置 |
JP6240339B2 (ja) * | 2014-09-22 | 2017-11-29 | 株式会社東芝 | ガス分析装置及びガス処理装置 |
JP6676389B2 (ja) * | 2016-01-29 | 2020-04-08 | 浜松ホトニクス株式会社 | 波長可変光源 |
JP6694355B2 (ja) * | 2016-09-01 | 2020-05-13 | 浜松ホトニクス株式会社 | 可動回折格子及びその製造方法、並びに外部共振器型レーザモジュール |
DE112019004915T5 (de) * | 2018-09-30 | 2021-07-08 | Agilent Technologies, Inc. | Lasermodul mit mehreren teillasern |
JP7245093B2 (ja) * | 2019-03-25 | 2023-03-23 | 浜松ホトニクス株式会社 | 光学キット、及び、光学装置 |
CN111916977B (zh) * | 2020-08-05 | 2021-12-17 | 中国工程物理研究院激光聚变研究中心 | 一种激光光谱合成系统 |
JP7399054B2 (ja) | 2020-09-23 | 2023-12-15 | 浜松ホトニクス株式会社 | 光学キット、及び、光学装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6018928B2 (ja) * | 1977-09-27 | 1985-05-13 | 株式会社島津製作所 | 回折格子分光器 |
JPS54102138A (en) * | 1978-01-27 | 1979-08-11 | Nippon Bunko Kogyo Kk | Wide wavelength region spectrometer |
JPS5979820A (ja) * | 1982-10-29 | 1984-05-09 | Shimadzu Corp | 回折格子分光器 |
JPS62298194A (ja) * | 1986-06-18 | 1987-12-25 | Fujitsu Ltd | レ−ザ発光装置 |
JPH01277727A (ja) * | 1988-04-30 | 1989-11-08 | Shimadzu Corp | 回折格子分光器 |
US5323001A (en) * | 1989-12-26 | 1994-06-21 | Canon Kabushiki Kaisha | Rotary encoder with scale member and interference of zero and first order diffraction beam |
US5905571A (en) * | 1995-08-30 | 1999-05-18 | Sandia Corporation | Optical apparatus for forming correlation spectrometers and optical processors |
JP3197869B2 (ja) * | 1998-03-31 | 2001-08-13 | アンリツ株式会社 | 波長可変レーザ光源装置 |
TW495749B (en) * | 1998-08-03 | 2002-07-21 | Matsushita Electric Ind Co Ltd | Optical head |
WO2001073504A1 (en) * | 2000-03-27 | 2001-10-04 | California Institute Of Technology | Adjustable liquid crystal blazed grating deflector |
US7466734B1 (en) | 2005-06-15 | 2008-12-16 | Daylight Solutions, Inc. | Compact external cavity mid-IR optical lasers |
EP2063315A1 (en) * | 2007-11-26 | 2009-05-27 | Electronics And Telecommunications Research Institute | Frequency-tunable terahertz light source device |
US7848382B2 (en) | 2008-01-17 | 2010-12-07 | Daylight Solutions, Inc. | Laser source that generates a plurality of alternative wavelength output beams |
US8619832B2 (en) * | 2008-05-08 | 2013-12-31 | Massachusetts Institute Of Technology | Lens coupled quantum cascade laser |
US7733925B2 (en) * | 2008-07-07 | 2010-06-08 | Daylight Solutions, Inc. | Continuous wavelength tunable laser source with optimum positioning of pivot axis for grating |
JP5536401B2 (ja) * | 2008-10-16 | 2014-07-02 | ギガフォトン株式会社 | レーザ装置および極端紫外光光源装置 |
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2011
- 2011-02-25 JP JP2011040256A patent/JP5775325B2/ja active Active
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2012
- 2012-02-09 US US13/369,830 patent/US8594142B2/en active Active
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Publication number | Publication date |
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US8594142B2 (en) | 2013-11-26 |
JP2012178436A (ja) | 2012-09-13 |
US20120219022A1 (en) | 2012-08-30 |
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