JP5755948B2 - 有機電界発光表示装置 - Google Patents
有機電界発光表示装置 Download PDFInfo
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- 238000005401 electroluminescence Methods 0.000 title claims description 7
- 239000010410 layer Substances 0.000 claims description 101
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 238000002347 injection Methods 0.000 claims description 16
- 239000007924 injection Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 13
- 230000005525 hole transport Effects 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 239000012044 organic layer Substances 0.000 claims description 6
- 230000001629 suppression Effects 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 99
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000011787 zinc oxide Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910016048 MoW Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/816—Multilayers, e.g. transparent multilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
290a 第1透明導電膜、
290b 第2透明導電膜、
290c 半透過金属膜、
300 有機膜、
301 正孔注入層、
302 正孔輸送層、
303a 青色発光層、
303b 緑色発光層、
303c 赤色発光層、
304 正孔抑制層、
305 電子注入層。
Claims (21)
- 基板上に、それぞれ下部電極、有機膜および上部電極の積層構造で形成された青色発光領域、緑色発光領域および赤色発光領域からなる複数の画素を含み、
前記青色発光領域および緑色発光領域は共振構造で形成され、前記赤色発光領域は非共振構造で形成され、
前記赤色発光領域に色変換層を含まない、有機電界発光表示装置。 - 前記赤色発光領域の前記下部電極は、透明導電膜の単一層または多重膜構造で形成される、請求項1に記載の有機電界発光表示装置。
- 前記青色発光領域および前記緑色発光領域の前記下部電極は、第1透明導電膜、半透過金属膜および第2透明導電膜の積層構造で形成される、請求項1または2に記載の有機電界発光表示装置。
- 前記第1透明導電膜は50〜150nmの厚さに形成され、前記第2透明導電膜は10〜20nmの厚さに形成される、請求項3に記載の有機電界発光表示装置。
- 前記半透過金属膜は5〜20nmの厚さに形成される、請求項3または4に記載の有機電界発光表示装置。
- 前記有機膜は50〜60nmの厚さに形成される、請求項1〜5のいずれか一つに記載の有機電界発光表示装置。
- 前記青色発光領域、前記緑色発光領域および前記赤色発光領域に形成される前記有機膜は、それぞれ青色発光層、緑色発光層および赤色発光層を含む、請求項1〜6のいずれか一つに記載の有機電界発光表示装置。
- 前記有機膜は、正孔注入層、正孔輸送層、正孔抑制層および電子注入層からなる群より選択される一つ以上をさらに含む、請求項7に記載の有機電界発光表示装置。
- 前記正孔注入層および正孔輸送層は19〜36nmの厚さに形成される、請求項8に記載の有機電界発光表示装置。
- 前記赤色発光領域の前記有機膜は、前記赤色発光層の厚さから最大60nmの厚さに形成される、請求項1〜9のいずれか一つに記載の有機電界発光表示装置。
- 前記赤色発光領域の前記有機膜は、前記赤色発光層の厚さが33.6〜35.6nmである、請求項1〜10のいずれか一つに記載の有機電界発光表示装置。
- 青色発光領域、緑色発光領域および赤色発光領域がそれぞれ定義された複数の発光領域を備えた基板と、
前記青色発光領域および前記緑色発光領域に形成され、第1透明導電膜、半透過金属膜および第2透明導電膜の積層構造で形成される下部電極と、
前記赤色発光領域に形成され、透明導電膜で形成される下部電極と、
を含み、
前記赤色発光領域に色変換層を含まない、有機電界発光表示装置。 - 前記下部電極上に有機膜および上部電極がさらに形成される、請求項12に記載の有機電界発光表示装置。
- 前記第1透明導電膜は50〜150nmの厚さに形成され、前記第2透明導電膜は10〜20nmの厚さに形成される、請求項12または13に記載の有機電界発光表示装置。
- 前記半透過金属膜は5〜20nmの厚さに形成される、請求項12〜14のいずれか一つに記載の有機電界発光表示装置。
- 前記有機膜は50〜60nmの厚さに形成される、請求項13〜15のいずれか一つに記載の有機電界発光表示装置。
- 前記青色発光領域、前記緑色発光領域および前記赤色発光領域に形成される有機膜は、それぞれ青色発光層、緑色発光層および赤色発光層を含む、請求項13〜16のいずれか一つに記載の有機電界発光表示装置。
- 前記有機膜は、正孔注入層、正孔輸送層、正孔抑制層および電子注入層からなる群より選択される一つ以上をさらに含む、請求項17に記載の有機電界発光表示装置。
- 前記正孔注入層および正孔輸送層は19〜36nmの厚さに形成される、請求項18に記載の有機電界発光表示装置。
- 前記赤色発光領域の前記有機膜は、前記赤色発光層の厚さから最大60nmの厚さに形成される、請求項13〜19のいずれか一つに記載の有機電界発光表示装置。
- 前記赤色発光領域の前記有機膜は、前記赤色発光層の厚さが33.6〜35.6nmである、請求項13〜20のいずれか一つに記載の有機電界発光表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0062880 | 2010-06-30 | ||
KR1020100062880A KR101689336B1 (ko) | 2010-06-30 | 2010-06-30 | 유기 전계 발광 표시장치 |
Publications (2)
Publication Number | Publication Date |
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JP2012015107A JP2012015107A (ja) | 2012-01-19 |
JP5755948B2 true JP5755948B2 (ja) | 2015-07-29 |
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JP2011136608A Active JP5755948B2 (ja) | 2010-06-30 | 2011-06-20 | 有機電界発光表示装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8471276B2 (ja) |
EP (1) | EP2403030A3 (ja) |
JP (1) | JP5755948B2 (ja) |
KR (1) | KR101689336B1 (ja) |
CN (1) | CN102315243B (ja) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8944018B2 (en) | 2010-07-14 | 2015-02-03 | Ford Global Technologies, Llc | Cooling strategy for engine head with integrated exhaust manifold |
CN202404339U (zh) * | 2012-01-12 | 2012-08-29 | 京东方科技集团股份有限公司 | 阵列基板及包括该阵列基板的显示装置 |
KR102019063B1 (ko) * | 2012-11-12 | 2019-09-06 | 엘지디스플레이 주식회사 | 유기발광장치 |
KR102046157B1 (ko) * | 2012-12-21 | 2019-12-03 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
CN103050506A (zh) * | 2012-12-28 | 2013-04-17 | 南京中电熊猫液晶显示科技有限公司 | 一种oled显示器 |
TWI500144B (zh) * | 2012-12-31 | 2015-09-11 | Lg Display Co Ltd | 有機發光顯示裝置及其製造方法 |
US10304906B2 (en) | 2013-01-18 | 2019-05-28 | Universal Display Corporation | High resolution low power consumption OLED display with extended lifetime |
US10243023B2 (en) | 2013-01-18 | 2019-03-26 | Universal Display Corporation | Top emission AMOLED displays using two emissive layers |
US9590017B2 (en) | 2013-01-18 | 2017-03-07 | Universal Display Corporation | High resolution low power consumption OLED display with extended lifetime |
US10229956B2 (en) * | 2013-01-18 | 2019-03-12 | Universal Display Corporation | High resolution low power consumption OLED display with extended lifetime |
US10580832B2 (en) | 2013-01-18 | 2020-03-03 | Universal Display Corporation | High resolution low power consumption OLED display with extended lifetime |
KR102131963B1 (ko) * | 2013-10-15 | 2020-07-09 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
US9627649B2 (en) * | 2013-11-26 | 2017-04-18 | Lg Display Co., Ltd. | Organic light emitting display device |
CN103996694B (zh) | 2014-04-25 | 2015-06-10 | 京东方科技集团股份有限公司 | 一种oled显示器及其制备方法 |
US10700134B2 (en) | 2014-05-27 | 2020-06-30 | Universal Display Corporation | Low power consumption OLED display |
CN104201187B (zh) * | 2014-08-18 | 2017-07-04 | 京东方科技集团股份有限公司 | 一种oled显示装置 |
KR102322083B1 (ko) | 2015-07-28 | 2021-11-04 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
CN105789258B (zh) * | 2016-03-24 | 2019-06-11 | 深圳市华星光电技术有限公司 | 一种oled显示面板及3d立体显示装置 |
CN106601775B (zh) * | 2016-12-19 | 2019-07-02 | 武汉华星光电技术有限公司 | Oled显示装置及其制作方法 |
JP6924589B2 (ja) * | 2017-03-03 | 2021-08-25 | パイオニア株式会社 | 発光装置の製造方法及び発光装置 |
CN107104129B (zh) * | 2017-05-19 | 2021-01-26 | 京东方科技集团股份有限公司 | Oled器件制造方法、oled器件及显示面板 |
CN107170905B (zh) * | 2017-07-05 | 2019-03-26 | 固安翌光科技有限公司 | 一种高可靠无源有机电致发光器件及其制备方法 |
CN107134539B (zh) * | 2017-07-05 | 2019-07-05 | 固安翌光科技有限公司 | 一种用于照明屏体的高可靠oled器件及其制备方法 |
KR102433315B1 (ko) * | 2017-12-27 | 2022-08-16 | 삼성전자주식회사 | 초음파 트랜스듀서가 임베디드된 유기 발광 다이오드 패널 및 이를 포함하는 표시 장치 |
US11114499B2 (en) * | 2018-01-02 | 2021-09-07 | Seoul Viosys Co., Ltd. | Display device having light emitting stacked structure |
US10797112B2 (en) | 2018-07-25 | 2020-10-06 | Universal Display Corporation | Energy efficient OLED TV |
KR102668520B1 (ko) * | 2018-12-31 | 2024-05-22 | 엘지디스플레이 주식회사 | 투명 표시장치 |
CN109461386A (zh) * | 2019-01-04 | 2019-03-12 | 京东方科技集团股份有限公司 | 显示装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1229655C (zh) * | 2001-06-01 | 2005-11-30 | 精工爱普生株式会社 | 滤色膜层及电光学装置 |
US6911772B2 (en) | 2002-06-12 | 2005-06-28 | Eastman Kodak Company | Oled display having color filters for improving contrast |
US6861800B2 (en) | 2003-02-18 | 2005-03-01 | Eastman Kodak Company | Tuned microcavity color OLED display |
JP2005044778A (ja) * | 2003-07-19 | 2005-02-17 | Samsung Sdi Co Ltd | 電界発光素子 |
CN100541857C (zh) * | 2003-10-13 | 2009-09-16 | 铼宝科技股份有限公司 | 平面发光元件及其制造方法 |
JP4475942B2 (ja) | 2003-12-26 | 2010-06-09 | 三洋電機株式会社 | 表示装置及びその製造方法 |
US7129634B2 (en) * | 2004-04-07 | 2006-10-31 | Eastman Kodak Company | Color OLED with added color gamut pixels |
JP2007103349A (ja) * | 2005-09-08 | 2007-04-19 | Seiko Epson Corp | 膜パターンの形成方法、有機el装置の製造方法、カラーフィルタ基板の製造方法、液晶表示装置の製造方法 |
JP2007207460A (ja) * | 2006-01-31 | 2007-08-16 | Seiko Epson Corp | 有機el装置および電子機器、有機el装置の製造方法 |
JP2007335185A (ja) * | 2006-06-14 | 2007-12-27 | Canon Inc | 有機el素子アレイ |
KR101212224B1 (ko) | 2007-01-02 | 2012-12-13 | 삼성디스플레이 주식회사 | 유기전계 발광표시장치 |
JP2008226718A (ja) * | 2007-03-14 | 2008-09-25 | Fuji Electric Holdings Co Ltd | 有機el素子 |
JP5008486B2 (ja) * | 2007-07-19 | 2012-08-22 | キヤノン株式会社 | 表示装置 |
US7825581B2 (en) * | 2008-02-12 | 2010-11-02 | Samsung Electronics Co., Ltd. | Organic light emitting diode display and method for manufacturing the same |
KR101582937B1 (ko) * | 2008-12-02 | 2016-01-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
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- 2011-06-28 EP EP11171668A patent/EP2403030A3/en not_active Ceased
- 2011-06-29 CN CN201110187697.4A patent/CN102315243B/zh active Active
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US8471276B2 (en) | 2013-06-25 |
CN102315243A (zh) | 2012-01-11 |
EP2403030A3 (en) | 2012-04-11 |
CN102315243B (zh) | 2016-04-27 |
JP2012015107A (ja) | 2012-01-19 |
EP2403030A2 (en) | 2012-01-04 |
KR20120002142A (ko) | 2012-01-05 |
US20120001207A1 (en) | 2012-01-05 |
KR101689336B1 (ko) | 2016-12-26 |
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