JP5753991B2 - Method for producing metal-ceramic bonding member - Google Patents
Method for producing metal-ceramic bonding member Download PDFInfo
- Publication number
- JP5753991B2 JP5753991B2 JP2011078093A JP2011078093A JP5753991B2 JP 5753991 B2 JP5753991 B2 JP 5753991B2 JP 2011078093 A JP2011078093 A JP 2011078093A JP 2011078093 A JP2011078093 A JP 2011078093A JP 5753991 B2 JP5753991 B2 JP 5753991B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- mold
- ceramic
- aluminum
- molten metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000919 ceramic Substances 0.000 title claims description 64
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 83
- 239000002184 metal Substances 0.000 claims description 83
- 239000000758 substrate Substances 0.000 claims description 39
- 229910052782 aluminium Inorganic materials 0.000 claims description 27
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 23
- 229910000838 Al alloy Inorganic materials 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 8
- 229910000831 Steel Inorganic materials 0.000 claims description 5
- 239000010959 steel Substances 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000005304 joining Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Description
本発明は、金属−セラミックス接合部材の製造方法に関するものであり、溶湯接合法でＡｌまたはＡｌ合金を接合する方法に関する。本発明の金属−セラミックス接合部材は例えば金属−セラミックス絶縁回路基板としてパワーモジュールに組み込まれ、自動車や電車、産業機械などに使用される。 The present invention relates to a method for manufacturing a metal / ceramic bonding member, and relates to a method for bonding Al or an Al alloy by a molten metal bonding method. The metal-ceramic bonding member of the present invention is incorporated in a power module as a metal-ceramic insulating circuit board, for example, and used for automobiles, trains, industrial machines, and the like.
電気自動車やハイブリッド自動車などの自動車、電車、工作機械などで用いられる大電流を制御するために、パワーモジュールが使用されている。パワーモジュールの内部には、金属−セラミックス絶縁基板が組み込まれており、セラミックス基板の一方の面に回路としての金属板が接合され、他方の面に放熱板として或いは放熱板に接合するための金属板が接合されている。前記回路としての金属板の上には半導体チップ等の電子部品が半田付けにより固定されている。 Power modules are used to control large currents used in automobiles such as electric cars and hybrid cars, trains, machine tools, and the like. A metal-ceramic insulating substrate is incorporated inside the power module, a metal plate as a circuit is bonded to one surface of the ceramic substrate, and a metal for bonding as a heat sink or to the heat sink on the other surface The plates are joined. On the metal plate as the circuit, an electronic component such as a semiconductor chip is fixed by soldering.
セラミックス基板に接合される金属板は、導電性、放熱性の観点からＣｕ、Ａｌおよびそれらの合金が用いられている。特に車両用途には金属板として、セラミックスに接合したときの熱衝撃に対する信頼性が高いＡｌまたはＡｌ合金が用いられることが多い。 Cu, Al, and their alloys are used for the metal plate joined to the ceramic substrate from the viewpoint of conductivity and heat dissipation. In particular, for a vehicle application, as a metal plate, Al or Al alloy having high reliability against thermal shock when bonded to ceramics is often used.
ＡｌまたはＡｌ合金をセラミックス基板に接合する方法としては、ろう材を介して接合するろう接法、セラミックス基板にＡｌまたはＡｌ合金の新鮮な溶湯を接触させ凝固・接合する溶湯接合法などがある。溶湯接合法はセラミックスと金属との接合界面に硬い層を形成しないため、耐熱衝撃性に優れ、高い信頼性が必要なハイブリッド自動車、電気自動車などに用いられている。 As a method for bonding Al or Al alloy to a ceramic substrate, there are a brazing method for bonding via a brazing material, a molten metal bonding method for bringing a fresh molten Al or Al alloy into contact with a ceramic substrate, and solidifying and bonding. Since the molten metal bonding method does not form a hard layer at the bonding interface between ceramics and metal, it is used in hybrid vehicles, electric vehicles, etc. that are excellent in thermal shock resistance and require high reliability.
溶湯接合法としては、セラミックス部材を金属の溶湯中で移動させて、溶湯で濡らした後冷却することによって、セラミックス部材の表面に溶湯を凝固させて接合する接合方法が開示されている（特許文献１）。また、所定の形状の鋳型中にセラミックス基板を保持しておき、溶湯を加圧注入してセラミックス基板に接触させた後、凝固することで半導体実装用絶縁基板を作製する方法が開示されている（特許文献２）。 As a molten metal bonding method, a bonding method is disclosed in which a ceramic member is moved in a molten metal, wetted with the molten metal, and then cooled to solidify the molten metal on the surface of the ceramic member (Patent Document). 1). Also disclosed is a method of manufacturing an insulating substrate for semiconductor mounting by holding a ceramic substrate in a mold having a predetermined shape, pressurizing and injecting molten metal into contact with the ceramic substrate, and then solidifying. (Patent Document 2).
溶湯接合法においてはアルミニウムまたはアルミニウム合金の酸化をできるだけ防止するため、酸素濃度の低い不活性ガス雰囲気等の雰囲気で接合する。また、鋳型にアルミニウムまたはアルミニウム合金が接合しないように、ガーボン製の鋳型を使用することが好ましく、特許文献１、２においてはこのような雰囲気および鋳型を用いた実施例が記載されている。
しかし、特許文献１、２の金属−セラミックス基板の接合方法では、セラミックス基板にアルミニウムまたはアルミニウム合金の溶湯が接触し接合とするとともに、鋳型やダイスもセラミックス基板と同様アルミニウム溶湯と反応し、鋳型やダイスが損傷したり寿命が短くなるという課題があった。さらには、アルミニウムまたはアルミニウム合金が鋳型やダイスと接合するといった不具合が発生することがあった。このような不具合によって鋳型やダイスの寿命が短くなると、鋳型やダイスの修理が必要となるため、その分の製造コストが上昇するなどの課題がある。
In the molten metal bonding method, bonding is performed in an atmosphere such as an inert gas atmosphere having a low oxygen concentration in order to prevent aluminum or aluminum alloy from being oxidized as much as possible. Moreover, it is preferable to use a mold made of Garbon so that aluminum or an aluminum alloy is not joined to the mold. Patent Documents 1 and 2 describe examples using such an atmosphere and a mold.
However, in the metal-ceramic substrate bonding method disclosed in Patent Documents 1 and 2, a molten aluminum or aluminum alloy is brought into contact with the ceramic substrate for bonding, and the mold and die react with the molten aluminum in the same manner as the ceramic substrate. There existed a subject that a die | dye was damaged or lifetime was shortened. Furthermore, there has been a problem that aluminum or an aluminum alloy is bonded to a mold or a die. When the life of the mold or the die is shortened due to such a problem, the mold or the die needs to be repaired, and thus there is a problem that the manufacturing cost correspondingly increases.
本発明は、このような従来の問題点に鑑み、鋳型やダイスの損傷や接合を抑制し、鋳型寿命を長くして製造コストを低減する金属−セラミックス接合部材の製造方法を提供することを目的とする。 The present invention has been made in view of such conventional problems, and an object of the present invention is to provide a method for manufacturing a metal / ceramic bonding member that suppresses damage and bonding of a mold and a die, prolongs the mold life, and reduces the manufacturing cost. And
本発明者らは、上記課題を解決するために鋭意研究した結果、金属製の鋳型を使用し、鋳型にアルミニウムまたはアルミニウム溶湯が反応しない条件でも接合できることを見出し、本発明を完成するに至った。 As a result of intensive studies to solve the above-mentioned problems, the present inventors have found that metal molds can be used and bonding can be performed even when aluminum or molten aluminum does not react with the molds, and the present invention has been completed. .
すなわち、本発明の金属−セラミックス接合部材は、金属からなる鋳型にアルミニウムまたはアルミニウム合金の溶湯を注湯し、該溶湯を加圧した状態でセラミックス部材を該溶湯中に挿入した後、冷却することを特徴とする。前記溶湯の注湯を空気中または不活性ガス雰囲気中で行うことが好ましく、前記金属がアルミニウムまたはアルミニウム合金の溶湯より融点が高いものであって、前記金属が鋼であることが好ましい。 That is, the metal-ceramic bonding member of the present invention is cooled after pouring a molten metal of aluminum or an aluminum alloy into a metal mold, inserting the ceramic member into the molten metal in a state where the molten metal is pressurized. It is characterized by. The molten metal is preferably poured in air or in an inert gas atmosphere, and the metal preferably has a melting point higher than that of the molten aluminum or aluminum alloy, and the metal is preferably steel.
本発明の金属−セラミックス接合部材の製造方法によって、鋳型やダイスの損傷や接合を抑制し、鋳型寿命を長くして製造コストを低減することができるとともに、金属とセラミックスを良好に接合することができる。 According to the method for manufacturing a metal / ceramic bonding member of the present invention, damage and bonding of a mold and a die can be suppressed, the mold life can be extended and manufacturing cost can be reduced, and metal and ceramic can be bonded well. it can.
以下、添付図面を参照して、本発明による金属−セラミックス接合部材の製造方法および製造装置について説明する。 Hereinafter, with reference to an accompanying drawing, the manufacturing method and manufacturing device of the metal-ceramics joining member by the present invention are explained.
まず、図１、図２に本発明の製造方法によって作製される金属−セラミックス接合部材２００として、金属−セラミックス接合絶縁回路基板の一例を示す。セラミックス基板１の一方の面（図１においては上面）に、例えば回路用である金属板３が形成されており、他方の面（図１においては下面）には例えば放熱用の金属板２が形成されている。 First, FIG. 1 and FIG. 2 show an example of a metal-ceramic bonding insulating circuit board as the metal-ceramic bonding member 200 manufactured by the manufacturing method of the present invention. For example, a metal plate 3 for circuit is formed on one surface (upper surface in FIG. 1) of the ceramic substrate 1, and a metal plate 2 for heat dissipation is formed on the other surface (lower surface in FIG. 1). Is formed.
（製造装置）
図１、図２に示す金属−セラミックス接合部材を製造するための製造装置１００は、図３、図４に示されるように上部鋳型１０と下部鋳型２０を備えている。金属−セラミックス接合部材２００を製造するときの上部鋳型１０と下部鋳型２０は、下部鋳型２０の上に上部鋳型１０を載せ、組み合わせて使用する。上部鋳型１０および下部鋳型２０の材質はいずれも金属からなり、例えば鋼材からなる。
(manufacturing device)
A manufacturing apparatus 100 for manufacturing a metal / ceramic bonding member shown in FIGS. 1 and 2 includes an upper mold 10 and a lower mold 20 as shown in FIGS. 3 and 4. The upper mold 10 and the lower mold 20 for manufacturing the metal / ceramic bonding member 200 are used by placing the upper mold 10 on the lower mold 20 and combining them. Both the upper mold 10 and the lower mold 20 are made of metal, for example, steel.
上部鋳型１０と下部鋳型２０が組み合わされた製造装置１００は、その内部に前記回路用である金属板３に相当する空間部５０と、前記セラミックス基板１を収納するための空間部７０と、前記放熱用である金属板２に相当する空間部６０を有する。 The manufacturing apparatus 100 in which the upper mold 10 and the lower mold 20 are combined includes a space portion 50 corresponding to the metal plate 3 for the circuit, a space portion 70 for housing the ceramic substrate 1, It has a space 60 corresponding to the metal plate 2 for heat dissipation.
また、下部鋳型２０には、セラミックス基板１および押し棒９０を収納できる、セラミックス基板１の幅と厚さと略等しい空間部８０が形成されており、押し棒９０でセラミックス基板１を押すことにより、前記空間部７０にセラミックス基板１が収納されるようになっている。なお、図３、図４には便宜上セラミックス基板が下部鋳型２０に収納された状態が描かれている。 The lower mold 20 is formed with a space 80 that can accommodate the ceramic substrate 1 and the push rod 90 and is substantially equal to the width and thickness of the ceramic substrate 1. By pressing the ceramic substrate 1 with the push rod 90, The ceramic substrate 1 is accommodated in the space 70. 3 and 4 show a state in which the ceramic substrate is housed in the lower mold 20 for the sake of convenience.
上部鋳型１０には金属溶湯を注湯する円筒状の注湯口３０とガス抜き穴４０が備えられている。前記注湯口３０から図示されない溶湯供給装置より金属溶湯が供給され、空間部５０、空間部７０、空間部６０が溶湯で満たされるようになっており、このとき空間部５０、空間部７０、空間部６０のガスが前記ガス抜き穴４０から抜けるようになっている。
また、製造装置１００を加熱する、図示しない加熱装置も設けられている。
The upper mold 10 is provided with a cylindrical pouring port 30 for pouring a molten metal and a gas vent hole 40. The molten metal is supplied from the molten metal supply device (not shown) from the pouring port 30 so that the space 50, the space 70, and the space 60 are filled with the molten metal. At this time, the space 50, the space 70, and the space The gas in the portion 60 can escape from the vent hole 40.
A heating device (not shown) for heating the manufacturing apparatus 100 is also provided.
（製造方法）
次に前記製造装置を用いた本発明の金属−セラミックス接合部材の製造方法を説明する。
まず、セラミックス基板１を下部鋳型２０の空間部８０に配置する（図３、図４参照）。セラミックス基板１は窒化アルミニウム、アルミナ、窒化珪素、ジルコニアなどを主成分とするものが好ましい。セラミックス基板１の一端の側面は空間部５０の一面を画定する下部鋳型２０の側面５１とほぼ同一平面となるように、即ち空間部７０に飛び出さないようにしておく。
(Production method)
Next, the manufacturing method of the metal-ceramic bonding member of the present invention using the manufacturing apparatus will be described.
First, the ceramic substrate 1 is placed in the space 80 of the lower mold 20 (see FIGS. 3 and 4). The ceramic substrate 1 is preferably composed mainly of aluminum nitride, alumina, silicon nitride, zirconia or the like. The side surface of one end of the ceramic substrate 1 is substantially flush with the side surface 51 of the lower mold 20 that defines one surface of the space portion 50, that is, does not protrude into the space portion 70.
この状態で、前記上部鋳型１０を下部鋳型２０の上に配置して固定し、次に注湯する金属溶湯の融点よりも高い温度に上部鋳型１０および下部鋳型２０を加熱する。金属溶湯はアルミニウムまたはアルミニウム合金が好ましく、前記加熱温度は概ね６００〜７５０℃の範囲であることが好ましい。鋳型の加熱装置は一般的なもので良く、例えば鋳型を炉内に設置してヒーターにより加熱する或いは、鋳型を直接ヒーターで加熱しても良い。 In this state, the upper mold 10 is placed and fixed on the lower mold 20, and the upper mold 10 and the lower mold 20 are heated to a temperature higher than the melting point of the molten metal to be poured next. The molten metal is preferably aluminum or an aluminum alloy, and the heating temperature is preferably in the range of 600 to 750 ° C. The mold heating apparatus may be a general one, for example, the mold may be installed in a furnace and heated by a heater, or the mold may be directly heated by a heater.
次に、鋳型の空間部５０、空間部７０、空間部６０に前記金属溶湯を注湯口３０から図示しない溶湯供給装置を用いて注湯する。このとき、雰囲気は大気でも良いが、窒素ガスなどの不活性ガスであることがより好ましい。なお、アルミニウムまたはアルミニウム合金は表面に強固な酸化皮膜が形成されており、特に高純度でない窒素やアルゴンなどの不活性ガス（酸素濃度が体積で１ｐｐｍ〜１００ｐｐｍ程度）においては不活性ガス雰囲気にしても、アルミニウムまたはアルミニウム合金の酸化皮膜が破れて活性な状態になり鋳型と接合することはない。ただし、アルミニウムまたはアルミニウム合金の溶湯が不要に酸化するのを防止する。 Next, the molten metal is poured into the mold space 50, space 70, and space 60 from the pouring port 30 using a melt supply device (not shown). At this time, the atmosphere may be air, but an inert gas such as nitrogen gas is more preferable. Aluminum or an aluminum alloy has a strong oxide film formed on the surface, and particularly in an inert gas such as nitrogen or argon having a low purity (oxygen concentration is about 1 ppm to 100 ppm by volume), an inert gas atmosphere is used. However, the oxide film of aluminum or aluminum alloy is broken and becomes active and does not join the mold. However, unnecessary oxidation of molten aluminum or aluminum alloy is prevented.
鋳型内の前記空間部に注湯された金属溶湯を、前記注湯口３０および前記ガス抜き穴４０を通じてガスで加圧する。加圧ガスは例えば空気や前記不活性ガスで行い、例えば窒素ガスであることがコスト上好ましい。加圧する圧力は０．１ｋＰａ以上であり、１０１ｋＰａ以上であることがより好ましい。鋳型が金属であるので、高い加圧力で溶湯を加圧することができる。金属溶湯がガス加圧された状態で、下部鋳型２０に配置しておいたセラミックス基板１を押し棒９０で空間部７０に押出す。このとき、セラミックス基板の端部は上部鋳型１０と下部鋳型２０で形成された空間部７０にガイドされて、空間部７０内に配置される。このとき押し棒９０によるセラミックス基板１の空間部７０への押出しは速い方がアルミニウムまたはアルミニウム合金表面の酸化膜を破るために好ましく、例えば秒速１０ｃｍ以上であることが好ましい。また、不要な酸化を防止するために、鋳型全体を不活性ガス雰囲気とするのが良い。 The molten metal poured into the space in the mold is pressurized with gas through the pouring port 30 and the vent hole 40. The pressurized gas is, for example, air or the inert gas, and is preferably nitrogen gas, for example, in terms of cost. The pressure to pressurize is 0.1 kPa or more, and more preferably 101 kPa or more. Since the mold is a metal, the molten metal can be pressurized with a high applied pressure. The ceramic substrate 1 placed in the lower mold 20 is extruded into the space portion 70 by the push rod 90 in a state where the molten metal is gas-pressed. At this time, the end portion of the ceramic substrate is guided in the space portion 70 formed by the upper mold 10 and the lower mold 20 and is disposed in the space portion 70. At this time, it is preferable that the push rod 90 is pushed into the space 70 of the ceramic substrate 1 in order to break the oxide film on the surface of the aluminum or aluminum alloy. For example, it is preferably 10 cm or more per second. Further, in order to prevent unnecessary oxidation, it is preferable that the entire mold is in an inert gas atmosphere.
所定時間（例えば１分以上）が溶湯中で保持した後、鋳型温度および金属溶湯の温度を下げてセラミックス基板１の一方の面に回路用の金属板３を凝固、接合させることで形成し、他方の面に放熱用の金属板２を凝固、接合させることで形成する。このとき、少なくとも溶湯が完全に凝固するまではガスで加圧しつづける。また、溶湯中で保持している間にセラミックス基板を該溶湯中で移動させるのが好ましい。移動は例えばセラミックス基板１を挟む機能を持つ押し棒９０を準備し、セラミックス基板１を空間部７０に配置した後、また空間部８０に押し棒８０で引き戻すといった操作を繰り返すことによる。 After holding in the molten metal for a predetermined time (for example, 1 minute or more), the mold temperature and the molten metal temperature are lowered to solidify and join the circuit metal plate 3 to one surface of the ceramic substrate 1, It is formed by solidifying and joining the heat radiating metal plate 2 to the other surface. At this time, the gas is continuously pressurized with gas until at least the molten metal is completely solidified. Further, it is preferable to move the ceramic substrate in the molten metal while being held in the molten metal. For example, the push rod 90 having a function of sandwiching the ceramic substrate 1 is prepared, and after the ceramic substrate 1 is arranged in the space portion 70, the operation is repeated such that the push rod 80 is pulled back to the space portion 80.
なお、金属溶湯は凝固収縮を考慮して、空間部５０、空間部７０、空間部６０の体積よりも多い量を注入しておき、注湯口３０およびガス抜け穴４０が最終凝固部となるように溶湯を冷却し、注湯口３０およびガス抜け穴４０に引け巣が集まるようにするのが好ましい。 In consideration of solidification shrinkage, the molten metal is injected in an amount larger than the volume of the space portion 50, the space portion 70, and the space portion 60 so that the pouring port 30 and the gas vent hole 40 become the final solidification portion. It is preferable to cool the molten metal so that shrinkage nests gather at the pouring port 30 and the gas vent hole 40.
凝固させた後、上部鋳型１０を下部鋳型２０から取りはずし、アルミニウムとセラミックス基板が接合した金属−セラミックス接合部材を下部鋳型２０から取り出す。鋳型の材質は鋼材であり、離型材塗布などの表面処理をしていないにもかかわらず、アルミニウムが鋳型と反応、接合せず鋳型からの離型性は良く、金属板の表面も滑らかな状態となる。また、鋳型の損傷は全く見らなかった。 After solidification, the upper mold 10 is removed from the lower mold 20, and the metal / ceramic bonding member in which aluminum and the ceramic substrate are bonded is taken out from the lower mold 20. The mold material is steel, and aluminum does not react with the mold and does not join, even though no surface treatment such as applying a mold release material is applied, and the mold is easily released from the mold and the surface of the metal plate is smooth. It becomes. Further, no damage to the mold was observed.
また、引け巣部を研磨で除去して、回路用金属板３を作製した。なお、回路用金属板は必要に応じて、回路パターンをエッチングなどで形成しても良い。 Further, the shrinkage nest portion was removed by polishing to produce a circuit metal plate 3. The circuit metal plate may be formed by etching or the like if necessary.
（実施例）
上記製造装置および製造方法によって、金属−セラミックス接合基板を作成する。金属は純アルミニウム（Ａｌ：９９．９９ｗｔ％以上）、セラミックス基板はアルミナ基板とした。また、溶湯の供給は大気中でおこない鋼からなる金属鋳型の温度は７００℃、溶湯の温度は７３０℃として、鋳型に溶湯を充填した。次に溶湯を空気で加圧しながら（約１０１ｋＰａ）アルミナ基板を溶湯中に配置した後、１分保持後に冷却した。
(Example)
A metal-ceramic bonding substrate is prepared by the manufacturing apparatus and the manufacturing method. The metal was pure aluminum (Al: 99.99 wt% or more), and the ceramic substrate was an alumina substrate. Further, the molten metal was supplied in the atmosphere, the temperature of the metal mold made of steel was 700 ° C., the temperature of the molten metal was 730 ° C., and the molten metal was filled into the mold. Next, the alumina substrate was placed in the molten metal while pressurizing the molten metal with air (about 101 kPa), and then cooled after being held for 1 minute.
その後、アルミニウムとアルミナ基板が接合した金属−セラミックス接合基板を鋳型から取り出した。鋳型は離型材塗布などの表面処理をしていないが、アルミニウムが鋳型と反応、接合せず鋳型からの離型性は良く、鋳型の損傷は全く見られなかった。また、金属板の表面も滑らかな状態であった。また、アルミニウムとアルミナ基板は十分な接合強度を有していた。 Thereafter, the metal / ceramic bonding substrate in which aluminum and an alumina substrate were bonded was taken out of the mold. The mold was not subjected to a surface treatment such as application of a mold release material, but aluminum did not react with or join to the mold, and the mold release property was good, and the mold was not damaged at all. The surface of the metal plate was also smooth. Further, the aluminum and alumina substrates had sufficient bonding strength.
１ セラミックス部材（セラミックス基板）
２ 金属部材（回路用金属板）
３ 金属部材（放熱用金属板）
１０ 上部鋳型
２０ 下部鋳型
３０ 注湯口
４０ ガス抜き穴
５０、６０、７０、８０ 空間部
９０ 押し棒
１００ 製造装置
２００ 金属−セラミックス接合部材
1 Ceramic member (ceramic substrate)
2 Metal member (metal plate for circuit)
3 Metal member (metal plate for heat dissipation)
DESCRIPTION OF SYMBOLS 10 Upper mold | type 20 Lower mold | type 30 Pouring port 40 Gas vent holes 50, 60, 70, 80 Space part 90 Push rod 100 Manufacturing apparatus 200 Metal-ceramics joining member
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011078093A JP5753991B2 (en) | 2011-03-31 | 2011-03-31 | Method for producing metal-ceramic bonding member |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011078093A JP5753991B2 (en) | 2011-03-31 | 2011-03-31 | Method for producing metal-ceramic bonding member |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012211053A JP2012211053A (en) | 2012-11-01 |
| JP5753991B2 true JP5753991B2 (en) | 2015-07-22 |
Family
ID=47265375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011078093A Active JP5753991B2 (en) | 2011-03-31 | 2011-03-31 | Method for producing metal-ceramic bonding member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5753991B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2022185725A (en) * | 2021-06-03 | 2022-12-15 | トヨタ自動車株式会社 | Casting apparatus |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2642574B2 (en) * | 1992-12-17 | 1997-08-20 | 同和鉱業株式会社 | Manufacturing method of ceramic electronic circuit board |
| JP4224388B2 (en) * | 2003-12-12 | 2009-02-12 | 日信工業株式会社 | Method for producing whisker composite metal material |
| JP4965305B2 (en) * | 2006-03-31 | 2012-07-04 | Ｄｏｗａメタルテック株式会社 | Method for producing metal / ceramic bonding substrate |
-
2011
- 2011-03-31 JP JP2011078093A patent/JP5753991B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012211053A (en) | 2012-11-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4965305B2 (en) | Method for producing metal / ceramic bonding substrate | |
| JP4756200B2 (en) | Metal ceramic circuit board | |
| JP4133170B2 (en) | Aluminum-ceramic bonded body | |
| JP5837754B2 (en) | Metal-ceramic bonding substrate and manufacturing method thereof | |
| JP5759902B2 (en) | Laminate and method for producing the same | |
| WO2018020695A1 (en) | Heat dissipation substrate, semiconductor package, semiconductor module and heat dissipation substrate manufacturing method | |
| JP5619437B2 (en) | Method for producing metal / ceramic bonding substrate | |
| JP2009253157A (en) | Soldering method and method of manufacturing semiconductor device | |
| JP5753991B2 (en) | Method for producing metal-ceramic bonding member | |
| JP5389595B2 (en) | Metal-ceramic bonding substrate and manufacturing method thereof | |
| JP4965314B2 (en) | Metal-ceramic bonding substrate manufacturing equipment | |
| JP2019141879A (en) | Aluminum-ceramic bonded substrate and method for manufacturing same | |
| JP4821013B2 (en) | Aluminum-ceramic bonding substrate and manufacturing method thereof | |
| JP4674999B2 (en) | Integrated ceramic circuit board manufacturing method | |
| JP5481725B2 (en) | Manufacturing method of ceramic-insulated substrate integrated metal-ceramic composite heat sink | |
| JP7422608B2 (en) | Metal-ceramic bonded substrate and its manufacturing method | |
| KR20140042683A (en) | Semiconductor unit and method for manufacturing the same | |
| US6997233B2 (en) | Mold and method for manufacturing metal-ceramic composite member | |
| JP5478178B2 (en) | Method and apparatus for manufacturing metal-ceramic bonding substrate | |
| JP3871599B2 (en) | Structure | |
| JP5181922B2 (en) | Power module substrate manufacturing apparatus and power module substrate manufacturing method | |
| JP4556307B2 (en) | Power module and method for manufacturing power module cushioning material | |
| JP2008021716A (en) | Power module substrate and method of manufacturing the same, and power module | |
| JP4862196B2 (en) | Method for manufacturing metal ceramic circuit board | |
| JP2011073194A (en) | Metal-ceramics joint base and method of manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140117 |
|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20140117 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141119 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141128 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150107 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150319 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20150327 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150327 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20150327 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20150511 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20150511 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5753991 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |