JP5740458B2 - Optical semiconductor package - Google Patents

Optical semiconductor package Download PDF

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Publication number
JP5740458B2
JP5740458B2 JP2013249640A JP2013249640A JP5740458B2 JP 5740458 B2 JP5740458 B2 JP 5740458B2 JP 2013249640 A JP2013249640 A JP 2013249640A JP 2013249640 A JP2013249640 A JP 2013249640A JP 5740458 B2 JP5740458 B2 JP 5740458B2
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Prior art keywords
optical semiconductor
lead frame
molded body
resin molded
light
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JP2014042079A (en
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士 内原
士 内原
英男 田村
英男 田村
雅之 杉崎
雅之 杉崎
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Toshiba Corp
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Toshiba Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Description

本発明は、光半導体パッケージに関し、特に、低熱抵抗を実現する光半導体パッケージの構造に関する。   The present invention relates to an optical semiconductor package, and more particularly to an optical semiconductor package structure that realizes a low thermal resistance.

従来の技術による光半導体パッケージについて図面を参照しながら説明する。   A conventional optical semiconductor package will be described with reference to the drawings.

図3(a)は、従来の光半導体パッケージの一例を示す正面図であり、また、同図(b)は、(a)における破線内の領域の拡大図である。   FIG. 3A is a front view showing an example of a conventional optical semiconductor package, and FIG. 3B is an enlarged view of a region within a broken line in FIG.

同図に示す光半導体パッケージ50は、2つの金属片51,52でなるリードフレーム53と、導電性接着剤54を介してリードフレーム53上に固着された光半導体素子22と、樹脂封止体56とを備える。   The optical semiconductor package 50 shown in the figure includes a lead frame 53 made up of two metal pieces 51 and 52, an optical semiconductor element 22 fixed on the lead frame 53 via a conductive adhesive 54, and a resin sealing body. 56.

光半導体素子22は、図3(b)に示すように、カソードが導電性接着剤54によりリードフレームの金属片51に電気的に接続され、また、アノードが金属ワイヤ26を介してリードフレーム53の金属片52に電気的に接続されている。   As shown in FIG. 3B, the optical semiconductor element 22 has a cathode electrically connected to the metal piece 51 of the lead frame by a conductive adhesive 54, and an anode connected to the lead frame 53 via the metal wire 26. The metal piece 52 is electrically connected.

図3に示すような従来の光半導体パッケージにおいて、通電により入力電流に比例して光半導体素子22が発熱する。発生した熱は、導電性接着剤54に伝導した後リードフレーム53に伝導し、その後外気に放出される。熱の一部は、封止樹脂56を経由して外気に放出されるが、リードフレーム53は、一般に熱伝導性が非常に良好な金属で形成されるため、大部分の熱は、リードフレーム53を通じて放出される。   In the conventional optical semiconductor package as shown in FIG. 3, the optical semiconductor element 22 generates heat in proportion to the input current when energized. The generated heat is conducted to the conductive adhesive 54, then to the lead frame 53, and then released to the outside air. A part of the heat is released to the outside air via the sealing resin 56. However, since the lead frame 53 is generally formed of a metal having a very good thermal conductivity, most of the heat is generated in the lead frame. 53 is released.

光半導体素子の特性は、熱による温度上昇で劣化し、この結果、光の取出し効率が低下する。従来、放熱性を向上させ、パッケージの熱抵抗を低減してこのような問題に対処するため、リードフレームタイプのパッケージについては、以下の方法が採用されてきた。   The characteristics of the optical semiconductor element are deteriorated by a temperature rise due to heat, and as a result, the light extraction efficiency is lowered. Conventionally, in order to cope with such problems by improving heat dissipation and reducing the thermal resistance of the package, the following methods have been adopted for lead frame type packages.

即ち、第1の方法としてリードフレームの幅を太くする方法や、第2の方法として導電性接着剤について熱伝導性が良好なものを選択する方法、第3の方法としてパッケージ全体の容量を増加させる方法、などが用いられた。   That is, the first method is to increase the lead frame width, the second method is to select a conductive adhesive with good thermal conductivity, and the third method is to increase the capacity of the entire package. And so on.

また、リードフレームタイプではなく、パッケージの熱抵抗が低いステムタイプなどを用いる場合もあった。   In some cases, a stem type having a low thermal resistance of the package is used instead of the lead frame type.

しかしながら、半導体素子は、一般的に、より一層の軽薄短小化が求められている。この一方、上述した第1および第3の方法によれば、パッケージの容積が大きくなってしまう。第2の方法によれば、パッケージの容積に影響を与えることはないが、大幅な効果は期待できない。また、ステムタイプのパッケージでは、部品の単価が高いことに加え、多数の部品を組立てなければならないため、大量生産には不向きである。   However, semiconductor devices are generally required to be lighter and thinner. On the other hand, according to the first and third methods described above, the volume of the package is increased. According to the second method, the volume of the package is not affected, but a significant effect cannot be expected. In addition, the stem type package is not suitable for mass production because the unit cost is high and a large number of parts must be assembled.

本発明は上記事情に鑑みてなされたものであり、その目的は、低熱抵抗を実現するリードフレームタイプの光半導体パッケージを提供することにある。   The present invention has been made in view of the above circumstances, and an object thereof is to provide a lead frame type optical semiconductor package that realizes a low thermal resistance.

本発明によれば、
光半導体素子と、
前記光半導体素子を主面に実装するリードフレームと、
前記光半導体素子を覆うように配設された樹脂成型体と、
を備え、
前記リードフレームは、前記主面に対向する裏面のうち前記光半導体素子が実装される領域の反対側に位置する第1の領域が前記樹脂成型体の底部を貫通して外部に露出するように形成されて第1の放熱領域をなし、アウタリード部が前記樹脂成型体から外側に張り出した形状をなして前記樹脂成型体から外側の領域が第2の放熱領域をなし、
前記リードフレームの前記第1の領域と前記リードフレームの外側端部の裏面とはほぼ同じ面に位置する、
光半導体パッケージが提供される。
According to the present invention,
An optical semiconductor element;
A lead frame for mounting the optical semiconductor element on a main surface;
A resin molding disposed so as to cover the optical semiconductor element;
With
The lead frame has a first region located on the opposite side of the back surface opposite to the main surface on which the optical semiconductor element is mounted, and is exposed to the outside through the bottom of the resin molded body. Formed to form a first heat dissipation area, the outer lead portion has a shape protruding outward from the resin molded body, and the outer area from the resin molded body forms a second heat dissipation area,
The first region of the lead frame and the back surface of the outer end portion of the lead frame are located on substantially the same plane,
An optical semiconductor package is provided.

本発明によれば、
光半導体素子と、
前記光半導体素子を覆うように配設された透光性樹脂成型体と、
前記光半導体素子を実装するリードフレームと、
前記リードフレームおよび前記透光性樹脂成型体を支持する遮光性樹脂成型体と、
を備え、
前記リードフレームは、前記光半導体素子を主面に実装する第1の部分と、前記第1の部分とは別体であり前記遮光性樹脂成型体の内部から前記遮光性樹脂成型体の外側へ延設されるように形成された複数の第2の部分と、を有し、
前記リードフレームの前記第1の部分は、その裏面が前記遮光性樹脂成型体の底部を貫通して下側へ突出するように形成されて第1の放熱領域をなし、前記第2の部分の前記遮光性樹脂成型体から外側の領域は第2の放熱領域をなし、前記第1の部分の前記裏面と、前記第2の部分の外側端部の裏面とはほぼ同じ面に位置する、
光半導体パッケージが提供される。
According to the present invention,
An optical semiconductor element;
A translucent resin molding disposed so as to cover the optical semiconductor element;
A lead frame for mounting the optical semiconductor element;
A light-shielding resin molding that supports the lead frame and the translucent resin molding;
With
The lead frame is separate from the first part for mounting the optical semiconductor element on the main surface and the first part, and from the inside of the light shielding resin molded body to the outside of the light shielding resin molded body. A plurality of second portions formed to extend, and
The first portion of the lead frame is formed so that the back surface thereof penetrates the bottom of the light-shielding resin molded body and protrudes downward to form a first heat dissipation region, and the first portion of the second portion The outer region from the light-shielding resin molded body forms a second heat dissipation region, and the back surface of the first portion and the back surface of the outer end portion of the second portion are located on substantially the same surface.
An optical semiconductor package is provided.

本発明によれば、リードフレームが遮光性樹脂成型体により保持され、その主面に対向する裏面のうち光半導体素子実装領域に対応する領域が上記遮光性樹脂成型体の底部から露出して第1の放熱領域をなすので、上記光半導体素子で発生する熱が高い効率で外部に放出される。これにより、熱抵抗が大幅に低減された光半導体パッケージが提供される。   According to the present invention, the lead frame is held by the light-shielding resin molded body, and the region corresponding to the optical semiconductor element mounting region of the back surface facing the main surface is exposed from the bottom of the light-shielding resin molded body. Since one heat dissipation region is formed, heat generated in the optical semiconductor element is released to the outside with high efficiency. As a result, an optical semiconductor package with significantly reduced thermal resistance is provided.

以下、本発明の実施の形態のいくつかについて図面を参照しながら説明する。   Hereinafter, some embodiments of the present invention will be described with reference to the drawings.

なお、以下の図面において図3と同一の部分には同一の参照番号を付してその説明を適宜省略する。   In the following drawings, the same parts as those in FIG. 3 are denoted by the same reference numerals, and the description thereof is omitted as appropriate.

(1)第1の実施の形態
まず、本発明にかかる光半導体パッケージの第1の実施の形態について図1を参照しながら説明する。同図に示すように、本実施形態の特徴は、光半導体素子により発生した熱を水平方向と底面方向に放出するリードフレーム13と、このリードフレーム13を保持するとともに透光性部材16を支持する遮光性樹脂成型体14とを備える点にある。
(1) First Embodiment First, a first embodiment of an optical semiconductor package according to the present invention will be described with reference to FIG. As shown in the figure, the feature of the present embodiment is that a lead frame 13 that releases heat generated by the optical semiconductor element in the horizontal direction and the bottom surface direction, and holds the lead frame 13 and supports the translucent member 16. The light-shielding resin molding 14 is provided.

図1は、本実施形態の光半導体パッケージ1を示す説明図であり、(a)は平面図、(b)は(a)のA−A切断面における断面図、(c)は(a)のB−B切断面における断面図を示す。   1A and 1B are explanatory views showing an optical semiconductor package 1 of the present embodiment, where FIG. 1A is a plan view, FIG. 1B is a cross-sectional view taken along the line AA of FIG. 1A, and FIG. Sectional drawing in the BB cut surface of is shown.

図1に示す光半導体パッケージ1は、リードフレーム13と、光半導体素子22と、遮光性樹脂成型体14と、透光性樹脂成型体16とを備えている。   The optical semiconductor package 1 shown in FIG. 1 includes a lead frame 13, an optical semiconductor element 22, a light-shielding resin molded body 14, and a translucent resin molded body 16.

リードフレーム13は、図1(a)に示すように、第1の金属部である金属片12と、第2の金属部である金属片11で構成される。金属片12は、インナーリード部と、このインナリード部から紙面において上下方向と左方向に延在するアウタリード部とを有する略T字型の形状で形成される。金属片12のインナーリード部とアウタリード部の境界領域には、後述する遮光性樹脂成型体と透光性樹脂成型体との間の密着性を高めるためのアンカーホール18が設けられている。また、金属片11は、インナリード部の先端が金属片12に所定距離だけ隔てられて紙面右方向に延在するように配置された略ストライプ形状で形成される。   As shown in FIG. 1A, the lead frame 13 includes a metal piece 12 that is a first metal part and a metal piece 11 that is a second metal part. The metal piece 12 is formed in a substantially T-shape having an inner lead portion and an outer lead portion extending from the inner lead portion in the vertical direction and the left direction in the drawing. An anchor hole 18 is provided in the boundary region between the inner lead portion and the outer lead portion of the metal piece 12 to enhance the adhesion between a light-shielding resin molded body and a translucent resin molded body, which will be described later. Further, the metal piece 11 is formed in a substantially striped shape so that the tip of the inner lead portion is separated from the metal piece 12 by a predetermined distance and extends in the right direction on the paper surface.

これらの金属片11,12は、いずれもプレス加工または鋳造により形成することができ、各金属片11,12のアウタリード部は、第2の放熱領域をなす。   Both of these metal pieces 11 and 12 can be formed by press working or casting, and the outer lead portion of each metal piece 11 and 12 forms a second heat dissipation region.

また、同図(a)および(b)に示すように、金属片12は、インナリード部中央の素子実装領域とアウタリード部の各端部とを除く領域がパッケージの底面よりも高くなるように、垂直方向に折曲げられて形成される。このような形状により、金属片12の素子実装領域とアウタリード部の各端部は、それぞれの底面において光半導体パッケージ1が実装される図示しない基板の主面に接触し、また、これ以外の領域は、基板上の配線から絶縁状態となる。   Further, as shown in FIGS. 4A and 4B, the metal piece 12 is formed so that the region excluding the element mounting region at the center of the inner lead portion and each end portion of the outer lead portion is higher than the bottom surface of the package. , Bent in the vertical direction. With such a shape, the element mounting region of the metal piece 12 and each end portion of the outer lead portion are in contact with the main surface of the substrate (not shown) on which the optical semiconductor package 1 is mounted on the bottom surface, and other regions. Is insulated from the wiring on the substrate.

光半導体素子22は、金属片12の実装領域上に載置され、導電性接着剤24により金属片12の主面に固着される。導電性接着剤24の材料としては、後述する遮光性樹脂成型体14の耐熱性を考慮すると、Ag(銀)ペーストが好ましい。光半導体素子22は、本実施形態においてはLED(Light Emitting Diode)であり、端子の一つ、例えばカソードが金属片12に電気的に接続される。   The optical semiconductor element 22 is placed on the mounting area of the metal piece 12 and is fixed to the main surface of the metal piece 12 by the conductive adhesive 24. As a material of the conductive adhesive 24, Ag (silver) paste is preferable in consideration of heat resistance of the light-shielding resin molding 14 described later. In this embodiment, the optical semiconductor element 22 is an LED (Light Emitting Diode), and one of the terminals, for example, the cathode, is electrically connected to the metal piece 12.

また、光半導体素子22は、他の端子、例えばアノードが金属ワイヤ26を介して金属片11に電気的に接続される。   Further, in the optical semiconductor element 22, another terminal, for example, an anode is electrically connected to the metal piece 11 through the metal wire 26.

遮光性樹脂成型体14は、本実施形態において第2の樹脂成型体を構成し、遮光性樹脂により底部と円筒状の側部とが一体的に形成されている。これにより、リードフレーム13をなす金属片11,12は、アウタリード部とインナリード部との境界領域において遮光性樹脂成型体14の側部により保持され、また、インナリード部は、金属片12の素子実装領域を除いて遮光性樹脂成型体14の底部主面により支持される。また、遮光性樹脂成型体14の側部上面は、中心点に近づくに従い高さが逓減する複数の段部をなす形状を有するように形成される。   The light-shielding resin molded body 14 constitutes a second resin molded body in this embodiment, and the bottom portion and the cylindrical side portion are integrally formed of the light-shielding resin. As a result, the metal pieces 11 and 12 forming the lead frame 13 are held by the side portions of the light-shielding resin molded body 14 in the boundary region between the outer lead portion and the inner lead portion. It is supported by the bottom principal surface of the light-shielding resin molding 14 except for the element mounting region. Moreover, the side part upper surface of the light-shielding resin molding 14 is formed so as to have a shape that forms a plurality of steps whose height gradually decreases as it approaches the center point.

遮光性樹脂成型体14の上述した形状は、所定の鋳型にリードフレーム13を主面が下面となるようにセットし、この鋳型内に遮光性樹脂を流し込むことにより容易に形成することができる。   The above-described shape of the light-shielding resin molding 14 can be easily formed by setting the lead frame 13 in a predetermined mold so that the main surface is the lower surface and pouring the light-shielding resin into the mold.

透光性樹脂成型体16は、本実施形態において第1の樹脂成型体を構成し、LEDの光軸上で光学的指向性が得られるレンズ形状を有するように成型される。   The translucent resin molded body 16 constitutes the first resin molded body in the present embodiment, and is molded so as to have a lens shape capable of obtaining optical directivity on the optical axis of the LED.

透光性樹脂成型体16は、本実施形態において、所望のレンズ形状に応じて成型された鋳型を遮光性樹脂成型体14の側部上面の所定の段部に載置して透光性樹脂を流し込むことにより成型される。上述したように、金属片11には、アンカーホール18が設けられているので、これを介して透光性樹脂16が遮光性樹脂成型体14と接着されることにより、透光性樹脂成型体16が遮光性樹脂成型体14と強く固着する。遮光性樹脂の材料としては、屈折率がレンズそのものに近い樹脂、例えばゲル状のシリコン透明樹脂を用いる。   In this embodiment, the translucent resin molded body 16 is a translucent resin in which a mold molded according to a desired lens shape is placed on a predetermined step on the upper surface of the side portion of the light-shielding resin molded body 14. It is molded by pouring. As described above, since the anchor hole 18 is provided in the metal piece 11, the translucent resin 16 is bonded to the light-shielding resin molded body 14 through the anchor hole 18, thereby the translucent resin molded body. 16 firmly adheres to the light-shielding resin molding 14. As the material of the light-shielding resin, a resin having a refractive index close to that of the lens itself, for example, a gel-like silicon transparent resin is used.

なお、透光性樹脂成型体16の成型は、上記方法に限ることなく、例えば、LEDとの間で光学特性が調整された半球体を予め透光性樹脂により形成しておき、この半球体の材料と同一の透光性樹脂をLEDを覆うように半球体の底面に対応する高さまで流し込み、その上に予め形成された半球体を載置して固着させても良い。また、透光性樹脂により一体的に固着させることなく、例えば乾燥窒素(N)を充填して半球体のみを遮光性樹脂成型体14の側部上面の対応する段部に固着させても良い。 The molding of the translucent resin molded body 16 is not limited to the above method. For example, a hemisphere whose optical characteristics are adjusted with the LED is formed in advance using a translucent resin. The same translucent resin as that of the material may be poured to a height corresponding to the bottom surface of the hemisphere so as to cover the LED, and a pre-formed hemisphere may be placed and fixed thereon. Further, instead of being integrally fixed with the light-transmitting resin, for example, dry nitrogen (N 2 ) may be filled and only the hemisphere may be fixed to the corresponding step on the side surface of the light-shielding resin molded body 14. good.

本実施形態の光半導体パッケージ1によれば、リードフレーム13のインナリード部における素子形成領域裏面側がパッケージの外部に露出して第1の放熱領域を構成し、さらに、リードフレーム13のアウタリード部においてパッケージの外部へ延在する第2の放熱領域を4つ備えるので、従来のパッケージと比較して熱抵抗を大幅に低減することができる。また、遮光性樹脂成型体14が基台となってリードフレーム13を保持するとともに、遮光性樹脂成型体14が透光性樹脂成型体16と固着されてこれを支持するので、接着性に優れ、外部から水分や汚染物質が進入することを確実に防止することができる。また、遮光性樹脂成型体14の側部上面に複数の段部を設けるので、透光性樹脂成型体16とLED22との距離を容易に調整することができる。さらに、リードフレーム13の裏面うち、放熱に直接寄与しない領域は、透光性樹脂成型体16の底面から所定距離だけ離隔するように形成されるので、基板への実装にあたり基板上配線の設計の自由度を妨げることもない。   According to the optical semiconductor package 1 of the present embodiment, the back surface side of the element formation region in the inner lead portion of the lead frame 13 is exposed to the outside of the package to form the first heat dissipation region, and further in the outer lead portion of the lead frame 13 Since the four second heat radiation areas extending to the outside of the package are provided, the thermal resistance can be greatly reduced as compared with the conventional package. Further, the light-shielding resin molded body 14 serves as a base to hold the lead frame 13, and the light-shielding resin molded body 14 is fixed to and supports the light-transmitting resin molded body 16, so that it has excellent adhesiveness. It is possible to reliably prevent moisture and contaminants from entering from the outside. In addition, since a plurality of step portions are provided on the upper surface of the side part of the light-shielding resin molded body 14, the distance between the light-transmitting resin molded body 16 and the LEDs 22 can be easily adjusted. Further, the area of the back surface of the lead frame 13 that does not directly contribute to heat dissipation is formed so as to be separated from the bottom surface of the translucent resin molded body 16 by a predetermined distance. It does not interfere with the degree of freedom.

(2)第2の実施の形態
次に、本発明にかかる光半導体パッケージの第2の実施の形態について図2を参照しながら説明する。
(2) Second Embodiment Next, a second embodiment of the optical semiconductor package according to the present invention will be described with reference to FIG.

図2は、本実施形態の光半導体パッケージ2の説明図であり、(a)はその平面図であり、また、(2)は(a)のC−C切断面における断面図である。   2A and 2B are explanatory views of the optical semiconductor package 2 of the present embodiment, in which FIG. 2A is a plan view thereof, and FIG. 2B is a cross-sectional view taken along the line CC in FIG.

図1に示す光半導体パッケージ1との対比において、図2に示す光半導体パッケージ2の特徴は、リードフレーム34の構造にある。   In contrast to the optical semiconductor package 1 shown in FIG. 1, the optical semiconductor package 2 shown in FIG. 2 is characterized by the structure of the lead frame 34.

即ち、本実施形態の光半導体パッケージ2は、図1に示す金属片12の代りに、金属ブロック33と金属片32とを備えている。金属ブロック33は、半径の異なる同心円の2つの円板を積載したような形状で一体形成され、頂部の円板部分には側面が中心に向って低くなる傾斜面S1をなすように切欠きが設けられ、その底面にLED22が載置される。LED22は、導電性接着剤24により切欠きの底面に固着されて金属ブロック33と電気的に接続される。また、金属ブロック33の底部は、頂部よりも半径が大きい円板形状を有し、その半径は、本実施形態において透光性樹脂成型体16と略同一である。さらに、遮光性樹脂成型体36は、その底面から金属ブロック33の底部が突出するように形成される。このような形状により、金属ブロック33が底面において図示しない基板上の配線に接続されるとともに、金属ブロック33の大きな底面積および、遮光性樹脂成型体36の実装領域に対応する領域を除く底面と基板との間の間隙により、LED22で発生した熱が効率よく放出される。   That is, the optical semiconductor package 2 of this embodiment includes a metal block 33 and a metal piece 32 instead of the metal piece 12 shown in FIG. The metal block 33 is integrally formed in a shape in which two concentric discs having different radii are stacked, and a notch is formed in the top disc portion so as to form an inclined surface S1 whose side surface is lowered toward the center. LED22 is mounted in the bottom face. The LED 22 is fixed to the bottom surface of the notch by the conductive adhesive 24 and is electrically connected to the metal block 33. Moreover, the bottom part of the metal block 33 has a disk shape with a larger radius than the top part, and the radius is substantially the same as the translucent resin molded body 16 in this embodiment. Further, the light-shielding resin molding 36 is formed so that the bottom of the metal block 33 protrudes from the bottom surface. With such a shape, the metal block 33 is connected to the wiring on the substrate (not shown) on the bottom surface, and the bottom surface except the large bottom area of the metal block 33 and the region corresponding to the mounting region of the light-shielding resin molded body 36 Heat generated by the LED 22 is efficiently released by the gap between the substrate and the substrate.

また、金属ブロック33の頂部の切欠きに形成された傾斜面S1により、LED22の光軸から外れた光が反射して透光性樹脂成型体16に入射し、光軸にほぼ平行な軌道で外部へ放射される。   Further, the inclined surface S1 formed in the top notch of the metal block 33 reflects the light deviating from the optical axis of the LED 22 and enters the translucent resin molded body 16, and has a trajectory substantially parallel to the optical axis. Radiated to the outside.

さらに、遮光性樹脂成型体36の側部は、図2(b)に示すように、内側が中心に向って低くなる傾斜形状を有し、その表面S2には、反射材が塗布されて白い光沢面となっている。従って、この傾斜面S2によっても、光軸から外れた光が反射し、透光性樹脂成型体16を介して光軸に平行な軌道で放射される。   Further, as shown in FIG. 2B, the side portion of the light-shielding resin molded body 36 has an inclined shape whose inner side is lowered toward the center, and the surface S2 is coated with a reflective material and is white. It has a glossy surface. Therefore, the light that deviates from the optical axis is also reflected by the inclined surface S2, and is emitted in a trajectory parallel to the optical axis through the translucent resin molded body 16.

なお、本実施形態においては、LED22のカソードが金属ブロック33を介して基板上配線に接続される構成としたが、これに限ることなく、実装される基板の設計に応じて、例えば同図の破線に示すように、金属ブロック33の頂部周辺領域と金属片32の先端部とを金属ワイヤ27にて接続し、金属片32のパッケージ外側の端部により基板上配線と接続しても勿論良い。   In the present embodiment, the cathode of the LED 22 is configured to be connected to the wiring on the substrate via the metal block 33. However, the present invention is not limited to this, for example, according to the design of the substrate to be mounted. Of course, the top peripheral region of the metal block 33 and the tip of the metal piece 32 may be connected by a metal wire 27 and connected to the wiring on the substrate by the end of the metal piece 32 outside the package, as shown by the broken line. .

本発明にかかる光半導体パッケージの第1の実施の形態の説明図である。It is explanatory drawing of 1st Embodiment of the optical semiconductor package concerning this invention. 本発明にかかる光半導体パッケージの第2の実施の形態の説明図である。It is explanatory drawing of 2nd Embodiment of the optical semiconductor package concerning this invention. 従来の技術による光半導体パッケージの一例を示す正面図および拡大図である。It is the front view and enlarged view which show an example of the optical semiconductor package by a prior art.

1,2 光半導体パッケージ
11,12,31,32 金属片
13,34 リードフレーム
14,36 遮光性樹脂成型体(第1の樹脂成型体)
16 透光性樹脂成型体(第2の樹脂成型体)
22 光半導体素子(LED)
24 導電性接着剤
26,27 金属ワイヤ
S1,S2 傾斜面
1, 2 Optical semiconductor package 11, 12, 31, 32 Metal piece 13, 34 Lead frame 14, 36 Light-shielding resin molding (first resin molding)
16 Translucent resin molding (second resin molding)
22 Optical semiconductor device (LED)
24 conductive adhesive 26, 27 metal wire S1, S2 inclined surface

Claims (4)

光半導体素子と、
前記光半導体素子に接する第1の樹脂成型体と、
第1の面で前記光半導体素子の第1の電極と接続される第1のリードフレームと、
前記第1のリードフレームと離隔して前記第1の樹脂成型体の外側へ延出するように配置され、いずれかが前記光半導体素子の第2の電極と導電体を介して接続される複数の第2のリードフレームと
前記第1および第2のリードフレームおよび前記第1の樹脂成型体を支持する第2の樹脂成型体と、
を備え、
前記第1の面とは反対の第2の面は前記第2の樹脂成型体の外部に露出し、
前記第2のリードフレームは、一端が前記第1および第2の樹脂成型体に接し、他端が前記第2の樹脂成型体の外部に露出し、
前記第2の面と、前記他端とはほぼ同じ面に位置し、
前記第2のリードフレームは、前記第1の面に平行な平面視において前記一端と前記他端とが前記延出方向に垂直な方向にずれている、
光半導体装置
An optical semiconductor element;
A first resin molding in contact with the optical semiconductor element;
A first of the first lead frame electrode and Ru is connected in the optical semiconductor device in a first plane,
A plurality of parts arranged so as to be separated from the first lead frame and extend to the outside of the first resin molded body, and one of which is connected to the second electrode of the optical semiconductor element via a conductor. A second lead frame of
And the second resin molded body you supporting said first and second lead frame and the first resin molded body,
With
The second surface opposite to the first surface is exposed to the outside of the second resin molding ,
One end of the second lead frame is in contact with the first and second resin moldings, and the other end is exposed to the outside of the second resin molding,
The second surface and the other end are located on substantially the same surface,
In the second lead frame, the one end and the other end are shifted in a direction perpendicular to the extending direction in a plan view parallel to the first surface.
Optical semiconductor device .
前記第2の面の大きさは、前記第1の面の大きさよりも大きいことを特徴とする請求項1に記載の光半導体装置The optical semiconductor device according to claim 1, wherein a size of the second surface is larger than a size of the first surface . 前記第1のリードフレームは、前記光半導体素子の実装領域に形成された凹部を有し、
前記凹部の側面は光を反射させる傾斜面をなすことを特徴とする請求項1または2に記載の光半導体装置
The first lead frame has a recess formed in a mounting region of the optical semiconductor element,
The optical semiconductor device according to claim 1, wherein a side surface of the concave portion forms an inclined surface that reflects light.
前記第2の樹脂成型体の前記第1の樹脂成型体側とは逆の側の面は、前記ほぼ同じ面よりも前記第1の樹脂成型体側に位置することを特徴とする請求項1乃至3のいずれかに記載の光半導体装置 4. The surface of the second resin molded body opposite to the first resin molded body side is located on the first resin molded body side with respect to the substantially same surface. 5. An optical semiconductor device according to any one of the above.
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