JP5730586B2 - シート製造装置、シート製造方法、及びこれを用いた製造物 - Google Patents
シート製造装置、シート製造方法、及びこれを用いた製造物 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 39
- 239000000155 melt Substances 0.000 claims description 196
- 238000001816 cooling Methods 0.000 claims description 84
- 229910052710 silicon Inorganic materials 0.000 claims description 44
- 239000010703 silicon Substances 0.000 claims description 44
- 229910052732 germanium Inorganic materials 0.000 claims description 31
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 11
- 239000012530 fluid Substances 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- 230000008719 thickening Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 40
- 239000013078 crystal Substances 0.000 description 32
- 210000004027 cell Anatomy 0.000 description 26
- 235000012431 wafers Nutrition 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 239000007787 solid Substances 0.000 description 8
- 238000002425 crystallisation Methods 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
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- 239000007788 liquid Substances 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 230000005484 gravity Effects 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 238000010587 phase diagram Methods 0.000 description 4
- 238000007711 solidification Methods 0.000 description 4
- 230000008023 solidification Effects 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- 210000001787 dendrite Anatomy 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000013598 vector Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/06—Non-vertical pulling
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/10—Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Soy Sauces And Products Related Thereto (AREA)
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Description
そして、スクリーン印刷機は、シート13に接点を印刷する。そして、加熱炉132は、シート13の接点の焼結、水素化、アニーリングを行う。そして、シート13は、個々の太陽電池134を形成するカッティング装置133により切断される。空気ベアリングは、様々な工程区画から分離するのに使用される。当業者であれば、区画の長さを、連続して流すための工程時間に対応させることが理解できるであろう。別の実施例では、シート13は、どの加工段階よりも前に切断される。したがって、シート13は、装置21から出た後に切断される。
Claims (17)
- シートの製造装置であって、
材料の溶融物を収容するように構成された溝を有する容器を備え、前記溶融物を、前記溝の第1のポイントから第2ポイントに流れるように構成し、
前記溶融物に近接して配置される冷却プレートを備え、前記冷却プレートを、前記溶融物上に前記材料のシートを形成するように構成し、
前記冷却プレートを、複数の冷却セグメントで構成し、
前記溝の前記第2のポイントに配置される斜面、堰、小さなダム、または隅部を備え、前記斜面、堰、小さなダム、または隅部を、前記溶融物から前記シートを分離するように構成したシートの製造装置。 - 前記材料を、シリコンで構成した請求項1記載のシートの製造装置。
- 前記材料は、シリコンとゲルマニウムであり、前記シートは、該シートに含まれるゲルマニウムの濃度に応じてバンドギャップが段階的に変わる請求項1記載のシートの製造装置。
- 前記冷却プレートは、前記溶融物より少なくとも300K低い温度である請求項1記載のシートの製造装置。
- 前記複数の冷却セグメントは、それぞれ異なる温度である請求項1記載のシートの製造装置。
- 前記冷却プレートは、放射冷却を用いるものである請求項1記載のシートの製造装置。
- 前記シートは第1の幅を有し、前記冷却プレートは第2の幅を有し、前記第1の幅と第2の幅は同一である請求項1記載のシートの製造装置。
- 前記冷却プレートは、曲がった縁部を備える請求項1記載のシートの製造装置。
- 前記シートは、多結晶シリコン又は単結晶シリコンである請求項1記載のシートの製造装置。
- 前記溶融物を、電磁流体ポンプ、スクリューポンプ、インペラーポンプ、ホイール、圧力手段の群から選択される装置を用いて、前記溝の第1ポイントから第2ポイントに流す請求項1記載の製造装置。
- 前記容器と、前記冷却プレートとは、筐体中に配置され、該筐体を、該筐体における少なくとも温度と圧力を制御するように構成する請求項1記載の製造装置。
- シートの製造方法であって、
溝を通して材料の溶融物を流し、前記溶融物を複数の冷却セグメントを用いて冷却し、前記溶融物上に前記材料のシートを形成し、前記シートと溶融物を流し、前記溶融物から前記シートを分離するシートの製造方法。 - 前記シートと前記溶融物は、シリコン、又はシリコンとゲルマニウムである請求項12に記載のシートの製造方法。
- 前記冷却は、放射冷却である請求項12に記載のシートの製造方法。
- 連続流の装置を使用して、前記シートから太陽電池を加工する工程を更に含む、請求項12に記載のシートの製造方法。
- 前記シートを第2の溶融物に移動させ、前記第2の溶融物で前記シートを厚くする工程を更に含む請求項12に記載のシートの製造方法。
- シートの製造装置であって、
材料の溶融物を収容するように構成される第1の溝を備え、前記溶融物を、前記第1の溝の第1のポイントから第2のポイントに流れるように構成し、
前記溶融物に近接して配置される冷却プレートを備え、前記冷却プレートを、前記溶融物上に前記材料のシートを形成するように構成し、
前記冷却プレートを、複数の冷却セグメントで構成し、
前記第1の溝の前記第2のポイントに配置される斜面、堰、小さなダム、または隅部を備え、前記斜面、堰、小さなダム、または隅部を、前記溶融物中に配置し、前記溶融物から前記シートを分離するように構成して前記溶融物を前記シートから流れださせ、
前記溶融物を前記第1の溝の前記第1のポイントに移動する第2の溝を備えるシートの製造装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US3655508P | 2008-03-14 | 2008-03-14 | |
US61/036,555 | 2008-03-14 | ||
US12/403,206 | 2009-03-12 | ||
US12/403,206 US7855087B2 (en) | 2008-03-14 | 2009-03-12 | Floating sheet production apparatus and method |
PCT/US2009/037089 WO2009114764A2 (en) | 2008-03-14 | 2009-03-13 | Floating sheet production apparatus and method |
Related Child Applications (1)
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JP2015078913A Division JP6122900B2 (ja) | 2008-03-14 | 2015-04-08 | フローティングシートの製造装置及び方法 |
Publications (3)
Publication Number | Publication Date |
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JP2011515311A JP2011515311A (ja) | 2011-05-19 |
JP2011515311A5 JP2011515311A5 (ja) | 2012-03-22 |
JP5730586B2 true JP5730586B2 (ja) | 2015-06-10 |
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JP2010550888A Active JP5730586B2 (ja) | 2008-03-14 | 2009-03-13 | シート製造装置、シート製造方法、及びこれを用いた製造物 |
JP2015078913A Active JP6122900B2 (ja) | 2008-03-14 | 2015-04-08 | フローティングシートの製造装置及び方法 |
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JP2015078913A Active JP6122900B2 (ja) | 2008-03-14 | 2015-04-08 | フローティングシートの製造装置及び方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7855087B2 (ja) |
JP (2) | JP5730586B2 (ja) |
KR (1) | KR101659970B1 (ja) |
CN (2) | CN102017178B (ja) |
TW (2) | TWI481751B (ja) |
WO (1) | WO2009114764A2 (ja) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7855087B2 (en) * | 2008-03-14 | 2010-12-21 | Varian Semiconductor Equipment Associates, Inc. | Floating sheet production apparatus and method |
US7816153B2 (en) * | 2008-06-05 | 2010-10-19 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for producing a dislocation-free crystalline sheet |
US9567691B2 (en) * | 2008-06-20 | 2017-02-14 | Varian Semiconductor Equipment Associates, Inc. | Melt purification and delivery system |
US8545624B2 (en) * | 2008-06-20 | 2013-10-01 | Varian Semiconductor Equipment Associates, Inc. | Method for continuous formation of a purified sheet from a melt |
US8475591B2 (en) * | 2008-08-15 | 2013-07-02 | Varian Semiconductor Equipment Associates, Inc. | Method of controlling a thickness of a sheet formed from a melt |
US7998224B2 (en) | 2008-10-21 | 2011-08-16 | Varian Semiconductor Equipment Associates, Inc. | Removal of a sheet from a production apparatus |
US9050652B2 (en) | 2008-11-14 | 2015-06-09 | Carnegie Mellon University | Methods for casting by a float process and associated apparatuses |
US8764901B2 (en) | 2010-05-06 | 2014-07-01 | Varian Semiconductor Equipment Associates, Inc. | Removing a sheet from the surface of a melt using elasticity and buoyancy |
US8685162B2 (en) * | 2010-05-06 | 2014-04-01 | Varian Semiconductor Equipment Associates, Inc. | Removing a sheet from the surface of a melt using gas jets |
US9267219B2 (en) * | 2010-05-06 | 2016-02-23 | Varian Semiconductor Equipment Associates, Inc. | Gas-lift pumps for flowing and purifying molten silicon |
KR101234119B1 (ko) | 2011-06-10 | 2013-02-19 | 한국에너지기술연구원 | 생산성 및 표면 품질이 우수한 연속주조법을 이용한 실리콘 기판 제조 장치 및 그 제조 방법 |
US9057146B2 (en) * | 2010-08-24 | 2015-06-16 | Varian Semiconductor Equipment Associates, Inc. | Eddy current thickness measurement apparatus |
US20130047913A1 (en) * | 2011-08-29 | 2013-02-28 | Max Era, Inc. | Method and Apparatus for Doping by Lane in a Multi-Lane Sheet Wafer Furnace |
US9464364B2 (en) * | 2011-11-09 | 2016-10-11 | Varian Semiconductor Equipment Associates, Inc. | Thermal load leveling during silicon crystal growth from a melt using anisotropic materials |
US20130213296A1 (en) * | 2012-02-17 | 2013-08-22 | Varian Semiconductor Equipment Associates, Inc. | Method for achieving sustained anisotropic crystal growth on the surface of a melt |
US9970125B2 (en) * | 2012-02-17 | 2018-05-15 | Varian Semiconductor Equipment Associates, Inc. | Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt |
CN102912448B (zh) * | 2012-09-13 | 2015-03-18 | 浙江长兴众成电子有限公司 | 一种用于半导体硅片快速退火的装置 |
CN102877134B (zh) * | 2012-09-13 | 2015-02-11 | 浙江长兴众成电子有限公司 | 用于半导体硅片快速退火的装置 |
US20140096713A1 (en) * | 2012-10-09 | 2014-04-10 | Varian Semiconductor Equipment Associates, Inc. | Apparatus for float grown crystalline sheets |
US20150040819A1 (en) * | 2013-08-08 | 2015-02-12 | Energy Materials Research, LLC | System and method for forming a silicon wafer |
US20150176151A1 (en) * | 2013-12-20 | 2015-06-25 | Energy Materials Research, LLC | System and method for forming a silicon wafer |
US10415151B1 (en) | 2014-03-27 | 2019-09-17 | Varian Semiconductor Equipment Associates, Inc | Apparatus for controlling heat flow within a silicon melt |
US9957636B2 (en) | 2014-03-27 | 2018-05-01 | Varian Semiconductor Equipment Associates, Inc. | System and method for crystalline sheet growth using a cold block and gas jet |
TW201940875A (zh) * | 2014-10-17 | 2019-10-16 | 美商瓦里安半導體設備公司 | 薄片形成設備、用於測量熔體表面的薄片的厚度的系統及用於在薄片形成設備中測定材料界面的位置的方法 |
JP6850004B2 (ja) * | 2015-04-29 | 2021-03-31 | 1366 テクノロジーズ インク. | 材料が消費及び補給される溶融材料の含有体積を維持する方法 |
US10526720B2 (en) | 2015-08-19 | 2020-01-07 | Varian Semiconductor Equipment Associates, Inc. | Apparatus for forming crystalline sheet from a melt |
US10179958B2 (en) | 2016-09-16 | 2019-01-15 | Varian Semiconductor Equipment Associates, Inc | Apparatus and method for crystalline sheet growth |
CN107217296B (zh) * | 2017-04-28 | 2019-05-07 | 常州大学 | 一种硅片水平生长设备和方法 |
CA2984308C (en) * | 2017-10-27 | 2021-01-05 | International Water-Guard Industries Inc. | Methods and systems for supplying water to an aircraft |
WO2020033419A1 (en) * | 2018-08-06 | 2020-02-13 | Carnegie Mellon University | Method for producing a sheet from a melt by imposing a periodic change in the rate of pull |
WO2020231971A1 (en) * | 2019-05-13 | 2020-11-19 | Leading Edge Crystal Technologies, Inc. | Exposure of a silicon ribbon to gas in a furnace |
KR20220044806A (ko) * | 2019-08-09 | 2022-04-11 | 리딩 엣지 이큅먼트 테크놀로지스, 아이엔씨. | 산소 농도가 낮은 영역이 있는 리본 또는 웨이퍼의 제조 |
Family Cites Families (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1817902A (en) * | 1927-05-03 | 1931-08-04 | Autostrop Patents Corp | Metal treating apparatus |
US3430680A (en) * | 1966-06-16 | 1969-03-04 | George R Leghorn | Method of forming structural shapes from molten material by stream casting |
US3681033A (en) * | 1969-01-31 | 1972-08-01 | Gen Motors Corp | Horizontal growth of crystal ribbons |
US3607115A (en) * | 1969-10-29 | 1971-09-21 | Gen Motors Corp | Crystal pulling from molten melts including solute introduction means below the seed-melt interface |
US3759671A (en) * | 1971-10-15 | 1973-09-18 | Gen Motors Corp | Horizontal growth of crystal ribbons |
DE2633961C2 (de) * | 1975-07-28 | 1986-01-02 | Mitsubishi Kinzoku K.K. | Verfahren zum Ziehen eines dünnen Halbleiter-Einkristallbandes |
JPS5261179A (en) * | 1975-11-14 | 1977-05-20 | Toyo Shirikon Kk | Horizontal growth of single crystal ribbons |
JPS5261180A (en) * | 1975-11-14 | 1977-05-20 | Toyo Shirikon Kk | Horizontal growth of crystal ribbons |
US4152387A (en) * | 1976-05-21 | 1979-05-01 | Peter Cloeren | Method for forming multi-layer laminates |
US4121965A (en) * | 1976-07-16 | 1978-10-24 | The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration | Method of controlling defect orientation in silicon crystal ribbon growth |
JPS5361577A (en) * | 1976-11-15 | 1978-06-02 | Agency Of Ind Science & Technol | Growing method for horizontally pulled ribbon crystal |
JPS5580798A (en) * | 1978-12-09 | 1980-06-18 | Agency Of Ind Science & Technol | Ribbon crystal growing method by lateral pulling |
JPS5580797A (en) * | 1978-12-09 | 1980-06-18 | Agency Of Ind Science & Technol | Ribbon crystal growing method by lateral pulling accompanied by circulating melt convection |
US4289571A (en) * | 1979-06-25 | 1981-09-15 | Energy Materials Corporation | Method and apparatus for producing crystalline ribbons |
US4417944A (en) * | 1980-07-07 | 1983-11-29 | Jewett David N | Controlled heat sink for crystal ribbon growth |
DE3049376A1 (de) * | 1980-12-29 | 1982-07-29 | Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen | Verfahren zur herstellung vertikaler pn-uebergaenge beim ziehen von siliciumscheiben aus einer siliciumschmelze |
US4594229A (en) * | 1981-02-25 | 1986-06-10 | Emanuel M. Sachs | Apparatus for melt growth of crystalline semiconductor sheets |
JPS57205395A (en) * | 1981-06-15 | 1982-12-16 | Toshiba Corp | Manufacture of crystal substrate |
DE3132776A1 (de) * | 1981-08-19 | 1983-03-03 | Heliotronic Gmbh | Verfahren zur herstellung grob- bis einkristalliner folien aus halbleitermaterial |
JPS5845191A (ja) * | 1981-09-14 | 1983-03-16 | エナジ−・マテリアルズ・コ−ポレイシヨン | 結晶性リボンを製造するための方法及び装置 |
JPS598688A (ja) * | 1982-07-06 | 1984-01-17 | Matsushita Electric Ind Co Ltd | 薄膜結晶の製造方法 |
US4555293A (en) * | 1983-07-26 | 1985-11-26 | French Robert C | Method and apparatus for thermo-bonding seams in thermoplastic material |
US4599132A (en) * | 1985-01-18 | 1986-07-08 | Energy Materials Corporation | Guidance system for low angle silicon ribbon growth |
US5233420A (en) * | 1985-04-10 | 1993-08-03 | The United States Of America As Represented By The Secretary Of The Navy | Solid state time base corrector (TBC) |
US4775443A (en) * | 1986-02-06 | 1988-10-04 | Bleil Carl E | Method and apparatus for zone regrowth of crystal ribbons from bulk material |
US4873063A (en) * | 1986-01-06 | 1989-10-10 | Bleil Carl E | Apparatus for zone regrowth of crystal ribbons |
US4749438A (en) * | 1986-01-06 | 1988-06-07 | Bleil Carl E | Method and apparatus for zone recrystallization |
US5705111A (en) * | 1987-12-31 | 1998-01-06 | American National Can Company | Methods for making multiple layer sheet materials |
US5069742A (en) * | 1990-02-05 | 1991-12-03 | Bleil Carl E | Method and apparatus for crystal ribbon growth |
US5055157A (en) | 1990-02-05 | 1991-10-08 | Bleil Carl E | Method of crystal ribbon growth |
US5229083A (en) * | 1990-02-05 | 1993-07-20 | Bleil Carl E | Method and apparatus for crystal ribbon growth |
DE4106589C2 (de) * | 1991-03-01 | 1997-04-24 | Wacker Siltronic Halbleitermat | Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski |
US5394825A (en) * | 1992-02-28 | 1995-03-07 | Crystal Systems, Inc. | Method and apparatus for growing shaped crystals |
US5370078A (en) * | 1992-12-01 | 1994-12-06 | Wisconsin Alumni Research Foundation | Method and apparatus for crystal growth with shape and segregation control |
JPH06191814A (ja) * | 1992-12-28 | 1994-07-12 | Tonen Corp | シリコン薄板の製造方法 |
US5993540A (en) * | 1995-06-16 | 1999-11-30 | Optoscint, Inc. | Continuous crystal plate growth process and apparatus |
JP3223081B2 (ja) | 1995-10-02 | 2001-10-29 | 松下電器産業株式会社 | 電池用電極基板の製造法およびこれに用いる鋳型 |
FR2756847B1 (fr) * | 1996-12-09 | 1999-01-08 | Commissariat Energie Atomique | Procede de separation d'au moins deux elements d'une structure en contact entre eux par implantation ionique |
US6146979A (en) * | 1997-05-12 | 2000-11-14 | Silicon Genesis Corporation | Pressurized microbubble thin film separation process using a reusable substrate |
US6066157A (en) * | 1998-09-16 | 2000-05-23 | Medtronics Ave, Inc. | Anchor joint for coaxial balloon dilatation catheter |
US6090199A (en) * | 1999-05-03 | 2000-07-18 | Evergreen Solar, Inc. | Continuous melt replenishment for crystal growth |
JP2001260217A (ja) | 2000-03-22 | 2001-09-25 | Nitto Denko Corp | 多孔質フィルムの製造方法 |
US7026634B2 (en) * | 2001-06-28 | 2006-04-11 | E-Beam & Light, Inc. | Method and apparatus for forming optical materials and devices |
JP2003117638A (ja) | 2001-10-15 | 2003-04-23 | Sharp Corp | 薄板製造装置および太陽電池 |
JP3503898B1 (ja) * | 2003-03-07 | 2004-03-08 | 権田金属工業株式会社 | マグネシウム系金属薄板の製造方法及び製造装置 |
US20060213589A1 (en) * | 2005-03-23 | 2006-09-28 | Fuji Photo Film Co., Ltd. | Method of manufacturing a support for a lithographic printing plate |
ATE394240T1 (de) * | 2005-07-14 | 2008-05-15 | Fujifilm Corp | Träger für eine lithographische druckplatte und verfahren zu dessen herstellung sowie eine vorsensibilisierte druckplatte |
JP4607692B2 (ja) * | 2005-07-14 | 2011-01-05 | 富士フイルム株式会社 | 平版印刷版用支持体の製造方法 |
CN102719880A (zh) * | 2006-09-28 | 2012-10-10 | Amg艾迪卡斯特太阳能公司 | 用于生产进料材料的连续带状物的方法和设备 |
US20080134964A1 (en) * | 2006-12-06 | 2008-06-12 | Evergreen Solar, Inc. | System and Method of Forming a Crystal |
US7855087B2 (en) * | 2008-03-14 | 2010-12-21 | Varian Semiconductor Equipment Associates, Inc. | Floating sheet production apparatus and method |
US8475591B2 (en) * | 2008-08-15 | 2013-07-02 | Varian Semiconductor Equipment Associates, Inc. | Method of controlling a thickness of a sheet formed from a melt |
US20100080905A1 (en) * | 2008-09-30 | 2010-04-01 | Varian Semiconductor Equipment Associates, Inc. | Solute stabilization of sheets formed from a melt |
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JP2011515311A (ja) | 2011-05-19 |
JP2015163584A (ja) | 2015-09-10 |
JP6122900B2 (ja) | 2017-04-26 |
US20110117234A1 (en) | 2011-05-19 |
TWI481751B (zh) | 2015-04-21 |
CN102017178A (zh) | 2011-04-13 |
TWI547602B (zh) | 2016-09-01 |
TW200940752A (en) | 2009-10-01 |
KR101659970B1 (ko) | 2016-09-26 |
WO2009114764A3 (en) | 2009-11-26 |
CN102925986B (zh) | 2015-07-29 |
US7855087B2 (en) | 2010-12-21 |
KR20110015517A (ko) | 2011-02-16 |
CN102925986A (zh) | 2013-02-13 |
US20090233396A1 (en) | 2009-09-17 |
WO2009114764A2 (en) | 2009-09-17 |
US9112064B2 (en) | 2015-08-18 |
CN102017178B (zh) | 2016-03-02 |
TW201525202A (zh) | 2015-07-01 |
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