JP5716012B2 - スイッチング特性を改善した抵抗スイッチングメモリ素子 - Google Patents

スイッチング特性を改善した抵抗スイッチングメモリ素子 Download PDF

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JP5716012B2
JP5716012B2 JP2012504904A JP2012504904A JP5716012B2 JP 5716012 B2 JP5716012 B2 JP 5716012B2 JP 2012504904 A JP2012504904 A JP 2012504904A JP 2012504904 A JP2012504904 A JP 2012504904A JP 5716012 B2 JP5716012 B2 JP 5716012B2
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layer
electrode
oxide
switching
metal
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Japanese (ja)
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JP2012523711A5 (fr
JP2012523711A (ja
Inventor
クセ，ロナルド，ジョン
ファタク，プラシャント
チャン，トニー
ミラー，マイケル
トン，ジンホン
ウー，ウェン
ハシム，イムラン
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インターモレキュラー，インコーポレーテッド
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Priority claimed from US12/608,934 external-priority patent/US8183553B2/en
Priority claimed from US12/610,236 external-priority patent/US8975613B1/en
Priority claimed from US12/705,474 external-priority patent/US8343813B2/en
Application filed by インターモレキュラー，インコーポレーテッド filed Critical インターモレキュラー，インコーポレーテッド
Publication of JP2012523711A publication Critical patent/JP2012523711A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/25—Multistable switching devices, e.g. memristors based on bulk electronic defects, e.g. trapping of electrons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
JP2012504904A 2009-04-10 2010-04-09 スイッチング特性を改善した抵抗スイッチングメモリ素子 Active JP5716012B2 (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US16853409P 2009-04-10 2009-04-10
US61/168,534 2009-04-10
US12/608,934 US8183553B2 (en) 2009-04-10 2009-10-29 Resistive switching memory element including doped silicon electrode
US12/608,934 2009-10-29
US12/610,236 US8975613B1 (en) 2007-05-09 2009-10-30 Resistive-switching memory elements having improved switching characteristics
US12/610,236 2009-10-30
US12/705,474 2010-02-12
US12/705,474 US8343813B2 (en) 2009-04-10 2010-02-12 Resistive-switching memory elements having improved switching characteristics
PCT/US2010/030619 WO2010118380A2 (fr) 2009-04-10 2010-04-09 Eléments de mémoire à commutation résistive ayant des caractéristiques de commutation améliorées

Publications (3)

Publication Number Publication Date
JP2012523711A JP2012523711A (ja) 2012-10-04
JP2012523711A5 JP2012523711A5 (fr) 2015-03-26
JP5716012B2 true JP5716012B2 (ja) 2015-05-13

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JP2012504904A Active JP5716012B2 (ja) 2009-04-10 2010-04-09 スイッチング特性を改善した抵抗スイッチングメモリ素子

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Country Link
JP (1) JP5716012B2 (fr)
KR (1) KR20120006502A (fr)
WO (1) WO2010118380A2 (fr)

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US8395927B2 (en) * 2010-06-18 2013-03-12 Sandisk 3D Llc Memory cell with resistance-switching layers including breakdown layer
US8724369B2 (en) 2010-06-18 2014-05-13 Sandisk 3D Llc Composition of memory cell with resistance-switching layers
US8520425B2 (en) 2010-06-18 2013-08-27 Sandisk 3D Llc Resistive random access memory with low current operation
JP2013004655A (ja) * 2011-06-15 2013-01-07 Sharp Corp 不揮発性半導体記憶装置およびその製造方法
US8546275B2 (en) * 2011-09-19 2013-10-01 Intermolecular, Inc. Atomic layer deposition of hafnium and zirconium oxides for memory applications
JP2013122985A (ja) * 2011-12-12 2013-06-20 Toshiba Corp 半導体記憶装置
EP2801629B1 (fr) * 2012-01-07 2020-12-02 Kabushiki Kaisha Toshiba Alliage de tungstène, corps fritté en alliage de tungstène obtenu au moyen de celui-ci, lampe à décharge, tube émetteur et magnétron
US8581224B2 (en) * 2012-01-20 2013-11-12 Micron Technology, Inc. Memory cells
US8878152B2 (en) * 2012-02-29 2014-11-04 Intermolecular, Inc. Nonvolatile resistive memory element with an integrated oxygen isolation structure
EP2695966B1 (fr) * 2012-08-06 2018-10-03 IMEC vzw Procédé ALD
KR101956794B1 (ko) * 2012-09-20 2019-03-13 에스케이하이닉스 주식회사 가변 저항 메모리 장치 및 그 제조 방법
KR101977271B1 (ko) * 2013-04-05 2019-05-10 에스케이하이닉스 주식회사 반도체 장치의 제조 방법
CN103441214B (zh) * 2013-08-02 2015-10-21 浙江大学 一种阻变存储器的制备方法
JP6222690B2 (ja) * 2013-08-05 2017-11-01 マイクロンメモリジャパン株式会社 抵抗変化素子
FR3019376B1 (fr) * 2014-03-26 2016-04-01 Commissariat Energie Atomique Dispositif de memoire vive resistive
US9722179B2 (en) * 2014-12-09 2017-08-01 Symetrix Memory, Llc Transition metal oxide resistive switching device with doped buffer region
KR102410289B1 (ko) 2014-12-18 2022-06-17 인텔 코포레이션 국소화된 필라멘트 채널을 포함하는 저항성 메모리 셀, 그것을 포함하는 디바이스, 및 그것의 제조 방법
EP3238281A4 (fr) * 2014-12-24 2018-08-08 INTEL Corporation Cellules de mémoire résistive et leurs précurseurs, leurs procédés de fabrication, et dispositifs les comprenant
KR102395193B1 (ko) * 2015-10-27 2022-05-06 삼성전자주식회사 메모리 소자 및 그 제조 방법
US9978942B2 (en) * 2016-09-20 2018-05-22 Arm Ltd. Correlated electron switch structures and applications
JP2019057544A (ja) 2017-09-19 2019-04-11 東芝メモリ株式会社 記憶素子
KR102345845B1 (ko) * 2018-12-17 2021-12-31 세종대학교산학협력단 세륨 산화물막을 활성층으로 포함하는 저항 변화 메모리 소자

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KR100621914B1 (ko) * 2004-08-13 2006-09-14 한국화학연구원 원자층 침착법으로 하프늄 산화물 박막을 제조하는 방법
KR100636796B1 (ko) * 2005-08-12 2006-10-20 한양대학교 산학협력단 반도체 소자 및 그 제조방법
KR100959755B1 (ko) * 2006-02-28 2010-05-25 동국대학교 산학협력단 저항 변화 메모리 장치용 가변 저항 산화막의 제조방법
KR101206034B1 (ko) * 2006-05-19 2012-11-28 삼성전자주식회사 산소결핍 금속산화물을 이용한 비휘발성 메모리 소자 및 그제조방법
KR101482814B1 (ko) * 2007-07-25 2015-01-14 인터몰레큘러 인코퍼레이티드 다중상태 비휘발성 메모리 소자
KR100983175B1 (ko) * 2008-07-03 2010-09-20 광주과학기술원 산화물막과 고체 전해질막을 구비하는 저항 변화 메모리소자, 및 이의 동작방법
WO2010038423A1 (fr) * 2008-10-01 2010-04-08 パナソニック株式会社 Elément de stockage non volatil et dispositif de stockage non volatil l’utilisant
WO2010073897A1 (fr) * 2008-12-26 2010-07-01 日本電気株式会社 Elément à résistance variable

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JP2012523711A (ja) 2012-10-04
KR20120006502A (ko) 2012-01-18
WO2010118380A3 (fr) 2011-01-13
WO2010118380A2 (fr) 2010-10-14

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