JP5706614B2 - 交流駆動型の発光素子 - Google Patents
交流駆動型の発光素子 Download PDFInfo
- Publication number
- JP5706614B2 JP5706614B2 JP2009537066A JP2009537066A JP5706614B2 JP 5706614 B2 JP5706614 B2 JP 5706614B2 JP 2009537066 A JP2009537066 A JP 2009537066A JP 2009537066 A JP2009537066 A JP 2009537066A JP 5706614 B2 JP5706614 B2 JP 5706614B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- substrate
- array
- series
- drive type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 64
- 238000003491 array Methods 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- -1 gallium nitride compound Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/40—Details of LED load circuits
- H05B45/42—Antiparallel configurations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
Landscapes
- Led Devices (AREA)
- Led Device Packages (AREA)
Description
Claims (4)
- 第1の基板、第2の基板、第3の基板及び第4の基板と、
前記基板上に各々配置され、複数の発光セルが直列に接続されすくなくとも2つの基板上に配置された発光セルは異なる波長を放出する直列アレイと、
前記第1の基板上の直列アレイと前記第2の基板上の直列アレイとを電気的に接続し、前記第3の基板上の直列アレイと前記第4の基板上の直列アレイとを電気的に接続する第1の接続手段と、
を備え、
前記第1の接続手段によって、前記第1の基板上の直列アレイと前記第2の基板上の直列アレイが接続され、また、前記第3の基板上の直列アレイと前記第4の基板上の直列アレイが接続され、2つのアレイ群が形成され、
さらに、互いに逆並列で接続された前記アレイ群内における対応する第1の接続手段を電気的に接続する少なくとも1つの第2の接続手段をさらに有し、
前記2つのアレイ群が、互いに逆並列で接続されて動作し、
動作時に、逆方向電圧が印加された前記アレイ群内における特定のアレイに過電圧が印加されることを防止することを特徴とする交流駆動型の発光素子。 - 前記基板上に各々配置され、前記直列アレイの両端に各々電気的に接続されたボンディングパッドをさらに有し、前記第1の接続手段は、前記ボンディングパッドを接続することを特徴とする請求項1に記載の交流駆動型の発光素子。
- 前記第1の接続手段は、前記ボンディングパッドを直接接続するボンディングワイヤであることを特徴とする請求項2に記載の交流駆動型の発光素子。
- 前記第1の接続手段は、パッケージのリード電極を含むことを特徴とする請求項2に記載の交流駆動型の発光素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060114553A KR100803162B1 (ko) | 2006-11-20 | 2006-11-20 | 교류용 발광소자 |
KR10-2006-0114553 | 2006-11-20 | ||
PCT/KR2007/004268 WO2008062941A1 (en) | 2006-11-20 | 2007-09-05 | Light emitting device for ac operation |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010510651A JP2010510651A (ja) | 2010-04-02 |
JP5706614B2 true JP5706614B2 (ja) | 2015-04-22 |
Family
ID=39343164
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009537066A Expired - Fee Related JP5706614B2 (ja) | 2006-11-20 | 2007-09-05 | 交流駆動型の発光素子 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8129917B2 (ja) |
EP (1) | EP2057694A4 (ja) |
JP (1) | JP5706614B2 (ja) |
KR (1) | KR100803162B1 (ja) |
WO (1) | WO2008062941A1 (ja) |
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DE112005002889B4 (de) * | 2004-12-14 | 2015-07-23 | Seoul Viosys Co., Ltd. | Licht emittierendes Bauelement mit einer Mehrzahl Licht emittierender Zellen und Baugruppen-Montage desselben |
EP2280430B1 (en) * | 2005-03-11 | 2020-01-01 | Seoul Semiconductor Co., Ltd. | LED package having an array of light emitting cells coupled in series |
KR100889956B1 (ko) * | 2007-09-27 | 2009-03-20 | 서울옵토디바이스주식회사 | 교류용 발광다이오드 |
US11297705B2 (en) | 2007-10-06 | 2022-04-05 | Lynk Labs, Inc. | Multi-voltage and multi-brightness LED lighting devices and methods of using same |
US10986714B2 (en) | 2007-10-06 | 2021-04-20 | Lynk Labs, Inc. | Lighting system having two or more LED packages having a specified separation distance |
US8648539B2 (en) * | 2007-10-06 | 2014-02-11 | Lynk Labs, Inc. | Multi-voltage and multi-brightness LED lighting devices and methods of using same |
TW200919696A (en) * | 2007-10-26 | 2009-05-01 | Led Lighting Fixtures Inc | Illumination device having one or more lumiphors, and methods of fabricating same |
JP5070147B2 (ja) * | 2008-07-11 | 2012-11-07 | 昭和電工株式会社 | 電源装置及びそれを備えた照明システム |
JP2010040937A (ja) * | 2008-08-07 | 2010-02-18 | Seiwa Electric Mfg Co Ltd | 半導体発光素子、発光装置、照明装置及び表示装置 |
KR101537794B1 (ko) * | 2008-09-09 | 2015-07-23 | 서울반도체 주식회사 | 교류 전원 구동용 발광 다이오드 패키지를 채택한 백라이트유닛 |
JP2010098302A (ja) * | 2008-09-22 | 2010-04-30 | Toshiba Lighting & Technology Corp | 発光モジュール、このモジュールを備えた発光装置、および、この発光装置を備えた照明器具 |
CN102086977A (zh) * | 2009-12-07 | 2011-06-08 | 小太阳国际能源股份有限公司 | 交流发光二极管封装装置的制作方法 |
KR101082847B1 (ko) * | 2009-12-18 | 2011-11-11 | 한국산업기술대학교산학협력단 | 방열 특성이 우수한 led조명등 |
TWI499347B (zh) * | 2009-12-31 | 2015-09-01 | Epistar Corp | 發光元件 |
KR101665932B1 (ko) * | 2010-02-27 | 2016-10-13 | 삼성전자주식회사 | 멀티셀 어레이를 갖는 반도체 발광장치, 발광모듈 및 조명장치 |
US9035329B2 (en) * | 2010-09-13 | 2015-05-19 | Epistar Corporation | Light-emitting device |
TWI446578B (zh) * | 2010-09-23 | 2014-07-21 | Epistar Corp | 發光元件及其製法 |
US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
TW201233944A (en) * | 2010-11-11 | 2012-08-16 | Koninkl Philips Electronics Nv | A LED assembly |
EP2657991A4 (en) * | 2010-12-24 | 2016-03-23 | Mitsubishi Chem Corp | LED LIGHT GENERATING DEVICE, TERMINAL NUMBER CONVERTER, AND LIGHTING DEVICE |
US8530909B2 (en) * | 2010-12-27 | 2013-09-10 | Micron Technology, Inc. | Array assemblies with high voltage solid state lighting dies |
KR101104767B1 (ko) | 2011-02-09 | 2012-01-12 | (주)세미머티리얼즈 | 발광 장치 |
US8624508B2 (en) * | 2011-02-11 | 2014-01-07 | Tai-Her Yang | LED device with voltage-limiting unit and voltage-equalizing resistance |
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JP2013229171A (ja) * | 2012-04-25 | 2013-11-07 | Toshiba Lighting & Technology Corp | 発光装置及び照明装置 |
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-
2006
- 2006-11-20 KR KR1020060114553A patent/KR100803162B1/ko active IP Right Grant
-
2007
- 2007-09-05 JP JP2009537066A patent/JP5706614B2/ja not_active Expired - Fee Related
- 2007-09-05 WO PCT/KR2007/004268 patent/WO2008062941A1/en active Application Filing
- 2007-09-05 US US12/442,800 patent/US8129917B2/en not_active Expired - Fee Related
- 2007-09-05 EP EP07808062A patent/EP2057694A4/en not_active Withdrawn
-
2012
- 2012-01-30 US US13/361,631 patent/US8339059B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR100803162B1 (ko) | 2008-02-14 |
US20120127718A1 (en) | 2012-05-24 |
US8129917B2 (en) | 2012-03-06 |
US8339059B2 (en) | 2012-12-25 |
JP2010510651A (ja) | 2010-04-02 |
WO2008062941A1 (en) | 2008-05-29 |
EP2057694A1 (en) | 2009-05-13 |
US20100072905A1 (en) | 2010-03-25 |
EP2057694A4 (en) | 2011-05-25 |
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