JP5686550B2 - Wafer processing method - Google Patents

Description

  The present invention relates to a wafer processing method for dividing a wafer into individual devices.

  A wafer formed on the surface by dividing a plurality of devices such as IC, LSI, etc. in a grid-form division line, a chuck table that holds the wafer, and a cutting means that rotatably supports the cutting blade, The device is divided into individual devices by a dicing apparatus having at least a cutting water supply means for supplying cutting water to the cutting area of the wafer, and the divided devices are used in various electric devices such as a mobile phone and a personal computer.

  Also, for the purpose of improving heat dissipation before dividing the wafer into individual devices, the chuck table that holds the wafer, the grinding means that rotatably supports the grinding wheel, and the grinding water is supplied to the grinding area of the wafer The back surface of the wafer is ground by a grinding device having at least a grinding supply means for processing the wafer thinly.

  As a nozzle plate of an inkjet head used in an inkjet printer, a wafer having a plurality of devices (nozzle plates) is manufactured through a plurality of processes including an etching process as disclosed in, for example, Japanese Patent Application Laid-Open No. 2000-203028. Thereafter, the wafer is divided into individual devices (nozzle plates) by a dicing apparatus.

JP 2000-203028 A

  However, in the case of, for example, an ink jet head nozzle plate in which the device has a plurality of through holes extending from the front surface to the back surface of the wafer, it is necessary to process the wafer to a desired thickness (20 to 30 μm) before forming the device. .

  Conventionally, the wafer must be supported by a hard plate and the back surface of the wafer must be ground, and then the hard plate must be removed from the wafer for processing and transporting thin wafers, resulting in poor handling and productivity and damage to the wafer. There is a problem that it is easy to make.

  In the case of a nozzle plate of an ink jet head, for example, about 700 through holes having a diameter of 10 to 20 μm, which serve as nozzles in a device forming process, are formed on a silicon bar having a length of 25 mm. If it divides | segments into, it will have a problem that cutting waste will penetrate | penetrate in a through-hole, and will reduce the quality of a device.

  The present invention has been made in view of the above points, and the object of the present invention is to be easy to handle even if the wafer is thinly processed, and to be divided into individual devices without degrading the quality of the device. It is to provide a possible wafer processing method.

According to the present invention, there is provided a wafer processing method in which the front surface is mirror-finished and the back surface is not mirror-finished, and the ring-shaped reinforcing portion surrounding the circular recess is formed by grinding a central portion of the wafer back surface to form a circular recess. Forming a plurality of devices in regions partitioned by a plurality of division lines formed in a lattice pattern on the surface of the wafer corresponding to the circular recesses, and implementing the device forming process Thereafter, a dicing tape is attached to the surface of the wafer and the outer periphery of the dicing tape is attached to an annular frame having an opening surrounding the wafer, and the dicing tape side of the laser processing apparatus is attached to the dicing tape side. A laser beam having a wavelength that is held by a chuck table and has transparency to the wafer is separated from the back side of the wafer. By irradiating position the converging point within the scheduled line, the wafer inside the device region and the device region modified layer forming step of forming a modified layer, the device region modified layer forming step after performing the wafer-side A laser beam having a wavelength that is held by the chuck table and has transparency to the wafer is irradiated from the dicing tape side to the inside of the ring-shaped reinforcing portion on the extension line of the planned dividing line. After the ring-shaped reinforcing portion modified layer forming step for forming the modified layer inside the ring-shaped reinforcing portion and the ring-shaped reinforcing portion modified layer forming step , external force is applied to the wafer via the dicing tape. And a wafer dividing step of dividing the wafer into individual devices along the planned division line on which the modified layer is formed.

  Preferably, in the ring-shaped reinforcing portion modified layer forming step, a plurality of modified layers are formed from the front surface to the back surface of the ring-shaped reinforcing portion.

  According to the wafer processing method of the present invention, the back surface of the wafer is ground so as to leave a ring-shaped reinforcing portion on the outer periphery of the wafer to form a circular recess, and then a device is formed on the surface of the wafer corresponding to the circular recess. This eliminates the need to attach and detach the hard plate, improving productivity. Further, since the ring-shaped reinforcing portion is formed, the conveyance is easy without damaging the wafer.

  In addition, the dicing tape side is held by a chuck table, and a laser beam having a wavelength that is transparent to the wafer is irradiated from the back side of the wafer to the inside of the planned dividing line of the device area and modified. Since the layer is formed, the modified layer can be formed at an appropriate position while the device region is kept flat.

  In addition, for the ring-shaped reinforcing part, a condensing point is positioned inside the ring-shaped reinforcing part on the extension line of the line to be divided from the dicing tape side, and a laser beam having a wavelength that is transparent to the dicing tape and the wafer is irradiated. Thus, a modified layer is formed.

  Since the laser beam is irradiated through the surface side of the mirror-finished wafer, the laser beam can be focused at an appropriate position, and as a result, a modified layer can be formed at an appropriate position. The ring-shaped reinforcing portion can be easily divided along the planned division line along with the region.

It is a perspective view of the laser processing apparatus used for the processing method of the wafer of the present invention. It is a block diagram of a laser beam irradiation unit. It is a figure which shows the protective tape sticking process of sticking a protective tape on the surface of a wafer. It is a perspective view which shows the grinding process which grinds the back surface of a wafer and forms a circular recessed part and a ring-shaped reinforcement part. It is explanatory drawing of a grinding process. It is a perspective view of a wafer in the state where a device was formed on the surface of a wafer. It is a perspective view which shows a dicing tape sticking process. FIG. 8A is a perspective view showing a modified layer forming step in the device region, and FIG. 8B is a partially broken sectional view of the wafer in which the modified layer is formed in the device region. FIG. 9A is a perspective view showing a state in which the modified layer is formed inside the ring-shaped reinforcing portion on the extension line of the division line through the dicing tape, and FIG. It is a partially broken sectional view of a wafer having a porous layer. It is a perspective view in the state where a modification layer was formed in a device area and a ring-shaped reinforcement part of a wafer along a division line. It is a perspective view of a dividing device. It is description of a wafer division | segmentation process.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 shows a schematic configuration diagram of a laser processing apparatus 2 suitable for carrying out the wafer processing method of the present invention. The laser processing apparatus 2 includes a first slide block 6 mounted on a stationary base 4 so as to be movable in the X-axis direction. The first slide block 6 is moved along the pair of guide rails 14 in the machining feed direction, that is, the X-axis direction, by the machining feed means 12 including the ball screw 8 and the pulse motor 10.

  A second slide block 16 is mounted on the first slide block 6 so as to be movable in the Y-axis direction. That is, the second slide block 16 is moved in the indexing direction, that is, the Y-axis direction along the pair of guide rails 24 by the indexing feeding means 22 constituted by the ball screw 18 and the pulse motor 20.

  A chuck table 28 is mounted on the second slide block 16 via a cylindrical support member 26, and the chuck table 28 can be moved in the X-axis direction and the Y-axis direction by the processing feed means 12 and the index feed means 22. . The chuck table 28 is provided with a clamp 30 for clamping the wafer sucked and held by the chuck table 28.

  A column 32 is erected on the stationary base 4, and a casing 35 for accommodating the laser beam irradiation unit 34 is attached to the column 32. As shown in FIG. 2, the laser beam irradiation unit 34 includes a laser oscillator 62 that oscillates a YAG laser or a YVO4 laser, a repetition frequency setting unit 64, a pulse width adjustment unit 66, and a power adjustment unit 68. .

  The pulse laser beam adjusted to a predetermined power by the power adjusting means 68 of the laser beam irradiation unit 34 is reflected by the mirror 70 of the condenser 36 attached to the tip of the casing 35 and further collected by the condenser objective lens 72. The wafer 11 is irradiated with light and applied to the chuck table 28.

  At the tip of the casing 35, an image pickup means 38 for detecting a processing region to be laser processed aligned with the condenser 36 in the X-axis direction is disposed. The image pickup means 38 includes an image pickup element such as a normal CCD that picks up an image of a processing region of a semiconductor wafer with visible light.

  The imaging unit 38 further includes an infrared irradiation unit that irradiates the semiconductor wafer with infrared rays, an optical system that captures the infrared rays irradiated by the infrared irradiation unit, and an infrared CCD that outputs an electrical signal corresponding to the infrared rays captured by the optical system. Infrared imaging means composed of an infrared imaging element such as the above is included, and the captured image signal is transmitted to a controller (control means) 40.

  The controller 40 includes a central processing unit (CPU) 42 that performs arithmetic processing according to a control program, a read-only memory (ROM) 44 that stores a control program, and a random read / write that stores arithmetic results. An access memory (RAM) 46, a counter 48, an input interface 50, and an output interface 52 are provided.

  Reference numeral 56 denotes a processing feed amount detection means comprising a linear scale 54 disposed along the guide rail 14 and a read head (not shown) disposed on the first slide block 6. Is input to the input interface 50 of the controller 40.

  Reference numeral 60 denotes index feed amount detection means comprising a linear scale 58 disposed along the guide rail 24 and a read head (not shown) disposed on the second slide block 16. The detection signal is input to the input interface 50 of the controller 40.

  An image signal picked up by the image pickup means 38 is also input to the input interface 50 of the controller 40. On the other hand, a control signal is output from the output interface 52 of the controller 40 to the pulse motor 10, the pulse motor 20, the laser beam irradiation unit 34, and the like.

  In the wafer processing method of the present invention, first, as shown in FIG. 3, a protective tape 23 is attached to the surface 11 a of the wafer 11. The wafer 11 is, for example, a silicon wafer having a thickness of 700 μm sliced from a silicon ingot, and the surface 11a which is a device forming side is mirror-finished, but the back surface 11b is not particularly mirror-finished.

  After the protective tape 23 is adhered to the front surface 11a of the wafer 11 as described above, a grinding step for grinding the central portion of the back surface 11b of the wafer 11 is performed. As shown in FIG. 4, the grinding unit 74 of the grinding apparatus includes a spindle 78 rotatably accommodated in a spindle housing 76, a wheel mount 80 fixed to the tip of the spindle 78, and screwed to the wheel mount 80. A grinding wheel 82 having a plurality of grinding wheels 84 arranged in an annular shape and a motor (not shown) for rotating the spindle 78 are included.

  In this grinding step, as shown in FIGS. 4 and 5, the protective tape 23 side of the wafer 11 is sucked and held by the chuck table 86 to expose the back surface 11 b of the wafer 11. In this state, while rotating the chuck table 86 in the direction indicated by arrow A at 300 rpm, for example, the grinding wheel 84 is rotated in the direction indicated by arrow B at, for example, 6000 rpm, and the grinding unit feed mechanism is driven to drive the grinding wheel 82. The grinding wheel 84 is brought into contact with the central portion of the back surface 11 b of the wafer 11. Then, the grinding wheel 82 is ground by a predetermined amount at a predetermined grinding feed speed.

  While measuring the thickness of the wafer 11 with a contact-type or non-contact-type thickness measurement gauge (not shown), the central portion of the wafer 11 is ground to a predetermined thickness, for example, 30 μm. As a result, a circular recess 88 is formed at the center of the back surface 11 b of the wafer 11, and a ring-shaped reinforcing portion 90 that surrounds the circular recess 88 with the outer peripheral region remaining is formed.

  Here, the relationship between the wafer 11 and the grinding wheel 82 for carrying out the grinding method of the present invention will be described with reference to FIG. The rotation center P1 of the chuck table 86 and the rotation center P2 of the grinding wheel 84 disposed in an annular shape are eccentric, and the grinding wheel 84 passes through the rotation center P1 of the wafer 11 and is disposed on the grinding wheel 82. The outer peripheral edge of 84 is set to an outer diameter passing through the outer periphery 91 of the circular recess 88, and the grinding wheel 84 arranged in an annular shape is set so as to pass through the rotation center P <b> 1 of the chuck table 86.

  After the grinding process is completed, a device forming process for forming a plurality of devices 15 on the surface 11a of the wafer 11 is performed. In this device forming step, as shown in FIG. 6, the center portion of the back surface 11b is ground and the front surface 11a of the wafer 11 corresponding to the circular recess 88 of the wafer 11 having the circular recess 88 formed on the back surface is orthogonal to each other. A device 15 is formed in each of the regions divided by the plurality of division lines 13 and the division lines 13.

  The device 15 is a nozzle plate in which a large number of through-holes serving as nozzles are formed, and a method for forming the device 15 is disclosed in Patent Document 1, for example. The wafer 11 has, on its front surface, a device region 17 in which a plurality of devices 15 corresponding to the circular recesses 88 on the back surface are formed, and an outer peripheral surplus region 19 that surrounds the device region 17. Reference numeral 21 denotes a notch as a mark indicating the crystal orientation of the silicon wafer.

  After the device forming step, a dicing tape attaching step for attaching the surface 11a of the wafer 11 to the dicing tape T is performed. In this dicing tape sticking step, the surface 11a of the wafer 11 is stuck to the dicing tape T and the outer periphery of the dicing tape T is stuck to the annular frame F as shown in FIG.

  Thereby, the wafer 11 is supported by the annular frame F via the dicing tape T. As the dicing tape T, it is preferable to use an ultraviolet curable tape whose adhesive strength is weakened by irradiation with ultraviolet rays.

  In the wafer processing method of the present invention, after the dicing tape sticking step, the modified layer forming step of forming the modified layer inside the wafer 11 is performed. In order to form a modified layer inside the wafer 11 using the laser processing apparatus 2 as shown in FIG. 1, the wafer 11 is sucked and held via the dicing tape T by the chuck table 28 of the laser processing apparatus 2. Accordingly, the back surface 11b of the wafer 11 sucked and held on the chuck table 28 is on the upper side.

  The chuck table 28 that sucks and holds the wafer 11 is moved by the processing feeding means 12 and positioned immediately below the imaging means 38. Then, alignment for detecting a processing region of the wafer 11 to be laser processed by the imaging means 38 is performed.

  In other words, the imaging unit 38 and the controller 40 include the division line 13 extending in the first direction of the wafer 11, and the condenser 36 of the laser beam irradiation unit 34 that irradiates the laser beam along the division line 13. Image processing such as pattern matching is performed to align the laser beam, and alignment of the laser beam irradiation position is performed.

  Next, alignment of the laser beam irradiation position is similarly performed on the division line 13 extending in the second direction orthogonal to the first direction formed on the wafer 11.

  At this time, the front surface 11a on which the planned dividing line 13 of the wafer 11 is formed is positioned on the lower side, but since the imaging means 38 includes an infrared CCD, the dividing planned line 13 is watermarked from the back surface 11b side. An image can be taken.

  When the alignment process is performed as described above, the chuck table 28 is moved to the laser beam irradiation region where the condenser 36 of the laser beam irradiation unit 34 for irradiating the laser beam is located, and is extended in the first direction. One end of the planned dividing line 13 is positioned directly below the condenser 36 of the laser beam irradiation unit 34.

  Then, as shown in FIG. 8A, the chuck table 28 is predetermined in the X-axis direction in FIG. 1 while irradiating the optical device wafer 11 with a pulse laser beam having a wavelength transmissive from the condenser 36. It moves at the feed rate. When the laser beam irradiation position of the condenser 36 reaches the other end of the division line 13, the irradiation of the pulse laser beam is stopped and the movement of the chuck table 28 is stopped.

  By aligning the focal point of the pulse laser beam emitted from the condenser 36 with the inside of the wafer 11, as shown in FIG. 8B, the device region 17 corresponding to the circular recess 88 is modified inside the wafer 11. A quality layer 92 is formed. The modified layer 92 is formed as a melt rehardened layer. The modified layer 92 refers to a region where the density, refractive index, mechanical strength, and other physical characteristics are different from the surroundings.

  After this modified layer forming step is performed along all the division lines 13 extending in the first direction formed on the surface 11a of the wafer 11 of the device region 17 corresponding to the circular recess 88, the chuck table After rotating 28 by 90 degrees, the same modified layer forming step is performed along all the planned dividing lines 13 extending in the second direction perpendicular to the first direction.

  When the formation of the modified layer 92 is completed along the division line 13 in the device region 17, as shown in FIG. 9A, the annular frame F is reversed and the dicing tape T is turned up on the chuck table. The wafer 11 is sucked and held.

  While the wafer 11 is sucked and held by the chuck table, the condensing point is positioned inside the ring-shaped reinforcing portion 90 by the condenser 36 through the dicing tape T, and the ring-shaped reinforcing portion 90 is extended along the extension line of the division line 13. A modified layer 94 is formed by irradiation with a laser beam. As shown in FIG. 9B, the modified layer 94 formed on the ring-shaped reinforcing portion 90 is formed in a plurality of layers (multiple steps).

  The wafer 11 is inverted from the state shown in FIG. 8 to form the modified layer 94 inside the ring-shaped reinforcing portion 90 because the surface of the ring-shaped reinforcing portion 90 shown in FIG. This is because it is difficult to position the light condensing point at an appropriate position inside the ring-shaped reinforcing portion 90 because the back surface 11b is not mirror-finished.

  Since the back surface of the device region 17 is formed in a concave shape, the device region 17 is curved and the condensing point of the laser beam cannot be properly positioned. Therefore, the device region 17 is irradiated with the laser beam from the back surface side.

  As shown in FIG. 9A, when the ring-shaped reinforcing portion 90 is irradiated with a laser beam through the dicing tape T, the surface of the dicing tape T and the surface 11a of the wafer 11 attached to the dicing tape T are also shown. Since it is mirror-finished, the laser beam can be condensed at an appropriate position inside the ring-shaped reinforcing portion 90.

  A plurality of modified layers 94 are formed inside the ring-shaped reinforcing portion 90 on the extension line of all the division lines 13. FIG. 10 shows the wafer 11 in a state in which the formation of the modified layer 92 along all the scheduled division lines 13 and the formation of the plurality of modified layers 94 in the ring-shaped reinforcing portion 90 have been completed.

  The processing conditions in this modified layer forming step are set as follows, for example.

Light source: LD excitation Q switch Nd: YVO 4 pulse laser Wavelength: 1064 nm
Pulse output: 0.2W
Repetition frequency: 80 kHz
Condensing spot diameter: φ1μm
Processing feed rate: 100 mm / sec

  In the wafer processing method of the present invention, after the modified layer forming step is performed, an external force is applied to the wafer 11 on which the modified layers 92 and 94 are formed by using a dividing device, and the wafer 11 is aligned along the planned dividing line 13. The dividing process of dividing is performed.

  For example, as shown in FIG. 11, the dividing apparatus 100 includes a frame holding unit 102 that holds the annular frame F, and a tape extending unit 104 that extends the dicing tape T attached to the annular frame F held by the frame holding unit 102. It has.

  The frame holding means 102 includes an annular frame holding member 106 and a plurality of clamps 108 as fixing means disposed on the outer periphery of the frame holding member 106. An upper surface of the frame holding member 106 forms a placement surface 106a on which the annular frame F is placed, and the annular frame F is placed on the placement surface 106a.

  The annular frame F placed on the placement surface 106 a is fixed to the frame holding member 106 by a clamp 108. The frame holding means 102 configured as described above is supported by the tape extending means 104 so as to be movable in the vertical direction.

  The tape expansion means 104 includes an expansion drum 110 disposed inside the annular frame holding member 106. The expansion drum 110 has an inner diameter that is smaller than the inner diameter of the annular frame F and larger than the outer diameter of the wafer 11 attached to the adhesive tape T attached to the annular frame F.

  The expansion drum 110 has a support flange 112 integrally formed at the lower end thereof. The tape expanding means 104 further includes driving means 114 that moves the annular frame holding member 106 in the vertical direction. The driving means 114 includes a plurality of air cylinders 116 disposed on the support flange 112, and the piston rod 118 is connected to the lower surface of the frame holding member 116.

  The driving means 114 composed of a plurality of air cylinders 116 has an annular frame holding member 106 with a reference position where the mounting surface 106a is substantially level with the upper end of the expansion drum 110, and a predetermined amount from the upper end of the expansion drum 110. Move vertically between lower expansion positions.

  A wafer dividing process performed using the dividing apparatus 100 configured as described above will be described with reference to FIGS. 12 (A) and 12 (B). As shown in FIG. 12A, the annular frame F that supports the wafer 11 via the adhesive tape T is placed on the placement surface 106 a of the frame holding member 106, and the frame holding member 106 is fixed by the clamp 108. To do. At this time, the frame holding member 106 is positioned at a reference position where the placement surface 106 a is substantially the same height as the upper end of the expansion drum 110.

  Next, the air cylinder 116 is driven to lower the frame holding member 106 to the extended position shown in FIG. Accordingly, the annular frame F fixed on the mounting surface 106a of the frame holding member 106 is also lowered, so that the dicing tape T attached to the annular frame F abuts on the upper edge of the expansion drum 110 and mainly has a radius. Expanded in the direction.

  As a result, radial tensile forces act on the wafer 11 adhered to the dicing tape T. When a radial force is applied to the wafer 11 in this manner, the wafer 11 is broken along the modified layers 92 and 94 and divided into individual devices (chips) 15.

  According to the wafer processing method of the embodiment described above, a laser beam having a wavelength that is transmissive to the wafer 11 is formed on the wafer surface 11 a in the device region 17 corresponding to the circular recess 88 from the back surface 11 b side of the wafer 11. The condensing point is positioned and irradiated inside the planned division line 13 to form the modified layer 92 along the planned division line 13 in the device region 17.

  Next, the annular frame F supporting the wafer 11 is inverted, and a plurality of modified layers 94 extending from the front surface to the back surface of the ring-shaped reinforcing portion 90 are formed inside the ring-shaped reinforcing portion 90 through the dicing tape T. Since it did in this way, the modification layer 94 can be formed in an appropriate position, and the ring-shaped reinforcement part 90 can be easily divided along the planned dividing line 13 formed in the device region 17.

  Further, in the wafer processing method of the present invention, after forming the circular concave portion by grinding the central portion of the back surface of the wafer so as to leave the ring-shaped reinforcing portion, the device 15 is formed on the surface 11a of the wafer 11 corresponding to the circular concave portion. Therefore, the handleability of the wafer is improved, and the wafer can be easily transported without damaging the wafer. Furthermore, it is not necessary to attach or detach the hard plate that is required in the conventional processing method, and the productivity is improved.

  Further, in the embodiment in which a large number of through holes are formed in the device 15 in the device formation process, the wafer 11 is divided by forming a modified layer 92, 94 inside the wafer 11 by irradiating the laser beam, and then applying an external force to the wafer 11. Therefore, the cutting waste or debris does not enter the through-hole, and the quality of the device can be prevented from deteriorating.

2 Laser processing apparatus 11 Wafer 13 Divided line 15 Device 23 Protective tape 28 Chuck table 34 Laser beam irradiation unit 36 Condenser 38 Imaging means 74 Grinding unit 82 Grinding wheel 88 Grinding wheel 88 Circular recess 90 Ring-shaped reinforcements 92 and 94 Modified layer 100 splitting device

Claims (2)

A wafer processing method in which the front surface is mirror-finished and the back surface is not mirror-finished ,
Grinding the center portion of the back surface of the wafer to form a circular recess and forming a ring-shaped reinforcing portion surrounding the circular recess; and
A device forming step of forming a plurality of devices in a region defined by a plurality of division lines formed in a lattice pattern on the surface of the wafer corresponding to the circular recess;
After performing the device forming step, a dicing tape adhering step of adhering the outer peripheral portion of the dicing tape to an annular frame having an opening surrounding the wafer while adhering the dicing tape to the surface of the wafer;
The dicing tape side is held by a chuck table of a laser processing apparatus, and a laser beam having a wavelength that is transparent to the wafer is irradiated from the back surface side of the wafer with the focusing point positioned inside the division line, A device region modified layer forming step of forming a modified layer inside the wafer in the device region;
After the step of forming the device region modified layer, the wafer side is held by the chuck table, and a laser beam having a wavelength that is transmissive to the wafer is transmitted from the dicing tape side to the ring shape on the extension line of the division line. A ring-shaped reinforcing part modified layer forming step of locating and irradiating a condensing point inside the reinforcing part and forming a modified layer inside the ring-shaped reinforcing part;
After performing the ring-shaped reinforcing portion modified layer forming step, wafer division is performed by applying external force to the wafer via the dicing tape and dividing the wafer into individual devices along the division line on which the modified layer is formed. Process,
A wafer processing method characterized by comprising:   The wafer processing method according to claim 1, wherein in the ring-shaped reinforcing portion modified layer forming step, a plurality of modified layers are formed from the front surface to the back surface of the ring-shaped reinforcing portion.

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