JP5682259B2 - Thermoelectric thin film element manufacturing method - Google Patents

Description

  The present invention relates to a thermoelectric thin film element manufacturing method for manufacturing any thermoelectric thin film element in a thermoelectric module in which P type thermoelectric thin film elements and N type thermoelectric thin film elements are alternately connected.

As a thermoelectric module of this type, the applicant has a plurality of P-type thermoelectric thin film elements and a plurality of N-type thermoelectric thin film elements alternately connected in series on a support substrate formed of a non-conductive material, A configured thermoelectric module is disclosed in Japanese Patent Application No. 2010-85703. In this case, as an example, the P-type thermoelectric thin film element cuts a laminated body in which thin films of Bi ₂ Te ₃ / Sb ₂ Te ₃ and thin films of Bi _0.5 Sb _1.5 Te ₃ are alternately laminated. Thus, it is formed in a long band shape. In addition, the N-type thermoelectric thin film element 122 is formed in a long band shape by cutting a laminated body in which Bi ₂ Te ₃ thin films and Bi ₂ Se ₃ thin films are alternately laminated, for example. Yes.

In manufacturing this thermoelectric module, as an example, a Bi ₂ Te ₃ / Sb ₂ Te ₃ thin film, a Bi _0.5 Sb _1.5 Te ₃ thin film on a manufacturing support substrate having a thickness of about 0.6 mm, Are alternately formed to manufacture a P-type thermoelectric thin film for manufacturing a P-type thermoelectric thin film element. Similarly, an N-type thermoelectric thin film for manufacturing an N-type thermoelectric thin film element is formed by alternately forming a Bi ₂ Te ₃ thin film and a Bi ₂ Se ₃ thin film on another manufacturing support substrate. Is produced. Next, the P-type thermoelectric thin film and the N-type thermoelectric thin film are cut into desired sizes (the sizes of the P-type thermoelectric thin film element and the N-type thermoelectric thin film element). Subsequently, the manufacturing support substrate is ground and removed from each cut piece using a lapping polishing apparatus or the like. Thereby, a P-type thermoelectric thin film element and an N-type thermoelectric thin film element are manufactured.

  Next, an electrode part formed by cutting a plate such as Cu is bonded onto the support substrate for the thermoelectric module by an adhesive, and each thermoelectric element is bonded to the electrode part on the support substrate by an adhesive having conductivity. Bond thin film elements. Thus, the P-type thermoelectric thin film element and the N-type thermoelectric thin film element are alternately connected in series via the respective electrodes, thereby completing the main body. Then, a thermoelectric module is completed by attaching a casing to a support substrate so that the formed main-body part may be covered.

Prior application 1

  Japanese Patent Application 2010-85703

  However, the manufacturing method of the thermoelectric module disclosed by the applicant has the following problems to be solved. That is, in the method for manufacturing a thermoelectric module disclosed by the applicant, the P-type thermoelectric thin film or N-type thermoelectric thin film in which a laminated body of each thin film is formed on a manufacturing support substrate is cut into a desired size for manufacturing. A method of manufacturing a P-type thermoelectric thin film element and an N-type thermoelectric thin film element by removing the support substrate is employed. In this case, each thin film laminate used as both thermoelectric thin film elements has a very thin thickness of about 0.1 to 1.0 [mu] m, and therefore, when these thin films are formed or cut into a desired size. At the time of cutting work, the presence of a manufacturing support substrate for ensuring physical strength is indispensable. In addition, the presence of a production support substrate is indispensable as a base material for forming the first thin film among the thin films.

  Therefore, as a support substrate for manufacturing, “it is formed with a thickness that can ensure physical strength” and “it is formed of a material capable of epitaxial growth suitable for film formation” The premise is to use one that satisfies both conditions. For this reason, in manufacturing this type of P-type thermoelectric thin film or N-type thermoelectric thin film, a plate body (SOI (Silicon On Insulator) in which a silicon oxide film is formed on a flat silicon surface is used as the manufacturing support substrate. ) Etc.) is generally used. In this case, it is known that silicon or silicon oxide in the production support substrate has higher thermal conductivity than each thin film constituting the P-type thermoelectric thin film or the N-type thermoelectric thin film. For this reason, when a thick manufacturing support substrate remains on the manufactured P-type thermoelectric thin film or N-type thermoelectric thin film, the P-type thermoelectric thin film or the N-type thermoelectric thin film has a P Temperature difference between both ends of the thermoelectric thin film and between both ends of the N-type thermoelectric thin film is averaged in a short time due to the presence of the supporting substrate for manufacturing with high thermal conductivity. It may be difficult to improve the thermoelectric properties.

  Thus, in the thermoelectric thin film element as a component of the thermoelectric module, the presence of the supporting substrate for manufacturing, which is indispensable at the time of manufacturing, may hinder the improvement of the thermoelectric characteristics of the thermoelectric module. It is preferable to make the manufacturing support substrate as thin as possible. However, when removing the manufacturing support substrate from a small piece of both thermoelectric thin films cut to the desired size using a lapping machine, etc., not only the manufacturing support substrate but also the laminate is ground by mistake. There is a risk. For this reason, it is difficult to make the manufacturing support substrate sufficiently thin.

  Specifically, at the time of grinding processing using this type of grinding apparatus, the grinding amount is processed in advance for the sample formed in the same manner as the object, and the grinding amount per processing time is acquired in advance. Based on the above, a method of calculating a processing time required for grinding an object by a desired amount is generally employed. However, when grinding most of the manufacturing support substrate with a thickness of 0.6 mm, even if the processing time is strictly controlled, due to deterioration of the grinding slurry used, thermal expansion of the object to be ground, etc. The grinding amount is different within the range of 30 μm to 50 μm. For this reason, a margin (in this example, 50 μm) capable of absorbing the above variation in the grinding amount is provided so that not only the manufacturing support substrate but also the laminated body of each thin film is not grounded. Since it is necessary to define and grind, it is difficult to sufficiently reduce the thickness of the support substrate for manufacturing.

  As described above, in the method for manufacturing a thermoelectric module disclosed by the applicant, it is difficult to sufficiently reduce the thickness of the manufacturing support substrate when manufacturing the P-type thermoelectric thin film element and the N-type thermoelectric thin film element. It is preferable to improve this point.

  The present invention has been made in view of such a problem to be solved, and a main object of the present invention is to provide a thermoelectric thin film element manufacturing method capable of manufacturing a thermoelectric thin film element having a sufficiently thin support substrate.

  In order to achieve the above object, a method of manufacturing a thermoelectric thin film element according to the present invention is a method of manufacturing any one of the thermoelectric thin film elements in a thermoelectric module in which P type thermoelectric thin film elements and N type thermoelectric thin film elements are alternately connected. In the above, a plurality of thin film laminates constituting the thermoelectric thin film element penetrate through the laminate and reach the support substrate with respect to the thermoelectric thin film element manufacturing intermediate formed on the support substrate. After forming the detection conductor portion on the bottom surface of the concave portion, and forming the connecting lead portion for connecting both ends of the detection conductor portion along the bottom surface of the concave portion to the measurement portion, the thermoelectric The support substrate is formed by relatively sliding the thermoelectric thin film element manufacturing intermediate with respect to a grinding surface plate, and a sensor section forming process for forming a grinding process sensor section on the thin film element manufacturing intermediate. Grinding When the thickening grinding process is executed in this order, in the sensor part forming process, the surface of the first detection conductor part as the detection conductor part should finish grinding on the support substrate. The depth of the first recess as the recess and the thickness of the first detection conductor portion are defined so as to be located at the same depth as the position, and the first recess and the first detection conductor And the connection lead portion, and in the grinding process, while measuring the electrical parameters of the first detection conductor portion via the both connection lead portions, the support substrate and the grinding process Grinding of the sensor unit is performed, and when the electrical parameter associated with the disappearance of the first detection conductor is measured, the grinding of the support substrate and the grinding sensor unit is terminated.

  Further, in the thermoelectric thin film element manufacturing method according to the present invention, prior to the sensor part forming process, a protective film forming process for forming a protective film on the surface of the laminate is executed, and in the sensor part forming process, the protection The concave portion having a depth reaching the support substrate through the film and the laminate is formed.

  Furthermore, in the thermoelectric thin film element manufacturing method according to the present invention, in the sensor part forming process, the first recess, the first detection conductor part, and the connection lead part are formed, and the detection conductor part The depth of the second recess as the recess and the second so that the surface of the second detection conductor portion is positioned at the same depth as the rough grinding end position where the rough grinding on the support substrate is to be finished. The thickness of the detection conductor portion is defined, the second concave portion, the second detection conductor portion, and the connection lead portion are formed, and in the grinding process, both the connection lead portions are interposed. Rough grinding is performed on the support substrate and the grinding sensor part while measuring an electrical parameter for the second detection conductor part, and the electricity associated with disappearance of the second detection conductor part is performed. Parameters Finishes rough grinding on the support substrate and the grinding sensor unit, and then starts finish grinding on the support substrate and the grinding sensor unit, and the first detection When the electrical parameter associated with the disappearance of the conductor portion for measurement is measured, finish grinding for the support substrate and the sensor unit for grinding processing is finished.

  In the thermoelectric thin film element manufacturing method according to the present invention, in the sensor part forming process, the non-conductive material is filled in the recesses where the formation of the connection lead part and the detection conductor part is completed.

  In addition, the method for manufacturing a thermoelectric thin film element according to the present invention provides a method for manufacturing any one of the thermoelectric thin film elements in a thermoelectric module in which P-type thermoelectric thin film elements and N-type thermoelectric thin film elements are alternately connected. The support substrate is ground and thinned by sliding an intermediate for manufacturing a thermoelectric thin film element, in which a laminate of a plurality of thin films constituting the element is formed on the support substrate, with respect to a grinding platen. When the grinding process is performed, the intermediate for manufacturing the thermoelectric thin film element is set in a grinding apparatus, and the first detection conductor portion is formed on the bottom surface of the first recess formed in the non-conductive base material. And a grinding processing sensor in which connection lead portions for connecting both end portions of the first detection conductor portion along the bottom surface of the first recess to the measurement portion are formed. The surface of the conductor part for detection 1 is in front After setting in the grinding apparatus so as to be the same position as the grinding end position where grinding on the support substrate should be finished, the electrical parameters of the first detection conductor part are measured via the connection lead parts. However, when the grinding is performed on the support substrate and the grinding sensor, and the electrical parameter associated with the disappearance of the first detection conductor portion is measured, the support substrate and the grinding sensor are measured. Grinding is finished.

  Furthermore, the thermoelectric thin film element manufacturing method according to the present invention executes a protective film forming process for forming a protective film on the surface of the laminate prior to the grinding process.

  In the thermoelectric thin film element manufacturing method according to the present invention, in the grinding process, the first concave portion, the first detection conductor portion, and the connection lead portion are formed, and the first concave portion is used. A second detection conductor portion is formed on the bottom surface of the deep second recess, and both ends of the second detection conductor portion along the bottom surface of the second recess are connected to the measurement portion. Using the grinding processing sensor in which the connection lead portion is formed, the surface of the first detection conductor portion is the same position as the grinding end position, and the second detection conductor portion After the grinding processing sensor is set in the grinding apparatus so that the surface thereof is at the same position as the rough grinding end position at which rough grinding on the support substrate is to be finished, the second sensor is connected via the connection lead portions. Electrical power of the detection conductor Rough grinding is performed on the support substrate and the grinding process sensor while measuring a meter, and when the electrical parameter associated with disappearance of the second detection conductor portion is measured, the support substrate and the The rough grinding for the grinding processing sensor is finished, and then finish grinding for the supporting substrate and the grinding processing sensor is started, and the electrical parameter associated with the disappearance of the first detection conductor portion is When the measurement is completed, finish grinding for the support substrate and the grinding sensor is finished.

  Furthermore, the thermoelectric thin film element manufacturing method according to the present invention uses the grinding processing sensor in which a non-conductive material is filled in the recess in which the connection lead portion and the detection conductor portion are formed.

  In the thermoelectric thin film element manufacturing method according to the present invention, when the sensor part forming process and the grinding process are executed in this order to manufacture either the P-type thermoelectric thin film element or the N-type thermoelectric thin film element, the sensor part forming process is performed. In the processing, the depth of the first concave portion and the thickness of the first detection conductor portion are such that the surface of the first detection conductor portion is located at the same depth as the grinding end position at which grinding on the support substrate is to be finished. The first concave portion, the first detection conductor portion and the connection lead portion are formed, and in the grinding process, the electrical parameters of the first detection conductor portion via both connection lead portions are defined. Grinding the support substrate and the grinding sensor unit while measuring the electrical parameters associated with the disappearance of the first detection conductor, and grinding the support substrate and the grinding sensor unit. To the end.

  Therefore, according to this method of manufacturing a thermoelectric thin film element, unlike the method of grinding a support substrate by managing the grinding processing time, the first detecting element in the grinding processing sensor unit during the manufacture of the thermoelectric thin film element manufacturing intermediate is used. The first detection object is ground in accordance with the progress of the grinding process for the intermediate for manufacturing the thermoelectric thin film element at the time of the grinding process only by adjusting the position of the surface of the conductor portion to the position where the grinding with respect to the support substrate should be finished. As a result of being able to reliably and easily identify the end timing of the grinding process for the intermediate for manufacturing the thermoelectric thin film element based on the electrical parameters of the conductor part, the thermal conductivity can be obtained without erroneously grinding the laminate. The supporting substrate having a high thickness can be sufficiently thinned. Thereby, the thermoelectric characteristic of the thermoelectric module carrying the thermoelectric thin film element manufactured according to this manufacturing method can be fully improved.

  According to the thermoelectric thin film element manufacturing method of the present invention, the protective film forming process for forming the protective film on the surface of the multilayer body is performed prior to the sensor part forming process. And when the intermediate for manufacturing the thermoelectric thin film element, which becomes thin by grinding the support substrate, is removed from the grinding machine by forming a recess that penetrates the stack and reaches the support substrate, the grinding process is completed When the intermediate for manufacturing a thermoelectric thin film element is transported to the next working position, a situation in which the intermediate for manufacturing a thermoelectric thin film element is damaged can be avoided.

  Furthermore, in the thermoelectric thin film element manufacturing method according to the present invention, in the sensor part forming process, the surface of the second detection conductor part is positioned at the same depth as the rough grinding end position at which rough grinding on the support substrate is to be finished. The depth of the second concave portion and the thickness of the second detection conductor portion are defined to form the second concave portion, the second detection conductor portion, and the connection lead portion. When the electrical parameters associated with the disappearance of the detection conductor are detected, rough grinding of the support substrate and the grinding sensor unit is finished, and then finish grinding is performed on the support substrate and the grinding sensor unit. At the same time, when the electrical parameter associated with the disappearance of the first detection conductor portion is measured, the finish grinding for the support substrate and the grinding processing sensor portion is terminated.

  Therefore, according to this thermoelectric thin film element manufacturing method, the position of the surface of the second detection conductor portion in the grinding processing sensor portion at the time of manufacturing the thermoelectric thin film device manufacturing intermediate is the position where the rough grinding with respect to the support substrate should be finished. In accordance with the electrical parameters of the second detection conductor portion to be ground in accordance with the progress of the grinding process with respect to the intermediate for manufacturing the thermoelectric thin film element at the time of the grinding process, As a result of reliably and easily specifying the timing of the end of the rough grinding for the intermediate body, it is possible to avoid the situation in which the rough grinding of the support substrate is executed more than necessary and each laminated body is erroneously ground. Thereby, the thermoelectric characteristic of the thermoelectric module which mounts the thermoelectric thin film element manufactured according to this manufacturing method can be improved reliably.

  Further, according to the thermoelectric thin film element manufacturing method according to the present invention, in the sensor part forming process, the non-conductive material is filled in the recesses where the formation of the connection lead part and the detection conductor part is completed, thereby grinding. When the support substrate has not been ground to the position where processing should be terminated, the thinned detection conductor part breaks, and as a result, it is mistakenly recognized that grinding has progressed to the position where the detection conductor part should disappear. Although the support substrate is ground to the position where the grinding process should be finished, the thinned detection conductor part is deformed so as to be pushed up by the surface plate without disappearing. Thus, the detection conductor is avoided when the support substrate is ground to the position where the grinding process should be terminated, avoiding the situation that the grinding is not proceeding to the position where the detection conductor portion should disappear. Part can be reliably eliminate. Thereby, the thermoelectric characteristic of the thermoelectric module which mounts the thermoelectric thin film element manufactured according to this manufacturing method can be improved further.

  In the thermoelectric thin film element manufacturing method according to the present invention, when the grinding process is executed to manufacture either the P-type thermoelectric thin film element or the N-type thermoelectric thin film element, the first detection in the grinding process sensor is performed. After setting the grinding processing sensor in the grinding device so that the surface of the conductive conductor portion is at the same position as the grinding end position at which grinding on the support substrate is to be finished, the first detection conductor is connected via both connection lead portions. Grinding is performed on the support substrate and the grinding sensor while measuring the electrical parameters for the portion, and the support substrate and the grinding process are performed when the electrical parameter associated with the disappearance of the first detection conductor portion is measured. Grinding for the sensor is completed.

  Therefore, according to this method of manufacturing a thermoelectric thin film element, unlike the method of grinding a support substrate by managing the grinding processing time, grinding is performed when setting an intermediate for manufacturing a thermoelectric thin film element and a sensor for grinding processing in a grinding apparatus. By simply aligning the position of the surface of the first detection conductor part in the processing sensor part with the position where the grinding with respect to the support substrate is to be finished, the grinding process proceeds to the intermediate for manufacturing the thermoelectric thin film element during the grinding process. As a result, it is possible to reliably and easily specify the timing of the end of the grinding process for the thermoelectric thin film element manufacturing intermediate based on the electrical parameters of the first detection conductor portion to be ground accordingly. A support substrate having high thermal conductivity can be sufficiently thinned without being accidentally ground. Thereby, the thermoelectric characteristic of the thermoelectric module carrying the thermoelectric thin film element manufactured according to this manufacturing method can be fully improved.

  Furthermore, according to the thermoelectric thin film element manufacturing method according to the present invention, by performing a protective film forming process for forming a protective film on the surface of the laminate prior to the grinding process, the support substrate is ground to reduce the thickness. When the intermediate for manufacturing a thermoelectric thin film element is removed from the grinding apparatus, or when the intermediate for manufacturing a thermoelectric thin film element that has been ground is transported to the next working position, the intermediate for manufacturing the thermoelectric thin film element is The situation where it breaks can be avoided.

  Further, in the thermoelectric thin film element manufacturing method according to the present invention, the surface of the first detection conductor portion is at the same position as the grinding end position, and the surface of the second detection conductor portion finishes rough grinding on the support substrate. After setting the grinding processing sensor in the grinding device so that it is at the same position as the rough grinding end position to be supported, it is supported while measuring the electrical parameters of the second detection conductor portion via both connection lead portions. Rough grinding is performed on the substrate and the grinding sensor, and when the electrical parameter associated with the disappearance of the second detection conductor portion is measured, the rough grinding on the support substrate and the grinding sensor is finished, and then In addition, finish grinding is started for the support substrate and the grinding sensor, and the support substrate is measured when an electrical parameter associated with the disappearance of the first detection conductor portion is measured. And to end the finish grinding with respect to the sensor for the grinding process.

  Therefore, according to this method for manufacturing a thermoelectric thin film element, when the intermediate for manufacturing a thermoelectric thin film element and the sensor for grinding processing are set in the grinding apparatus, the position of the surface of the second detection conductor portion in the grinding processing sensor portion is determined. The electrical condition of the second detection conductor portion that is ground in accordance with the progress of the grinding process for the thermoelectric thin film element manufacturing intermediate is simply adjusted to the position where the rough grinding for the support substrate is to be finished. Based on the parameters, it is possible to reliably and easily identify the timing of the end of the rough grinding for the intermediate for manufacturing the thermoelectric thin film element. You can avoid the situation. Thereby, the thermoelectric characteristic of the thermoelectric module which mounts the thermoelectric thin film element manufactured according to this manufacturing method can be improved reliably.

  Furthermore, in the thermoelectric thin film element manufacturing method according to the present invention, a grinding process is performed by using a grinding process sensor in which a non-conductive material is filled in a recess in which a connection lead part and a detection conductor part are formed. At the time when the support substrate is not ground to the position where it should be finished, the thinned detection conductor part breaks, and as a result, it is mistaken that the grinding has progressed to the position where the detection conductor part should disappear. In spite of the support substrate being ground to the position where the grinding process should be finished, the thinned detection conductor part is deformed so as to be pushed up by the surface plate without disappearing, Avoid the situation that the detection conductor is misunderstood as grinding has not progressed to the position where it should disappear, and when the support substrate is ground to the position where the grinding process should be finished, It is possible to really disappear. Thereby, the thermoelectric characteristic of the thermoelectric module which mounts the thermoelectric thin film element manufactured according to this manufacturing method can be improved further.

1 is a configuration diagram of a grinding apparatus 1. FIG. It is an external appearance perspective view of the intermediate body 20 for thermoelectric thin film element manufacture. 2 is a cross-sectional view of a thermoelectric module 100. FIG. 2 is a plan view of the thermoelectric module 100. FIG. It is sectional drawing of the intermediate body 10 (20A) for thermoelectric thin film element manufacture, and the thermoelectric thin film element 121,122. It is sectional drawing of the intermediate body 20 for thermoelectric thin film element manufacture. It is sectional drawing of the state (intermediate body 20A for thermoelectric thin film element manufacture) in which the protective film 15 was formed on the intermediate body 10 for thermoelectric thin film element manufacture. It is sectional drawing of the state which formed the groove | channel 25a in the formation surface side of the protective film 15 with respect to the intermediate body 10 for a thermoelectric thin film element manufacture of the state shown in FIG. It is sectional drawing of the state which formed the groove | channel 25b in the formation surface side of the protective film 15 with respect to the intermediate body 10 for manufacturing the thermoelectric thin film element of the state shown in FIG. It is sectional drawing of the state which formed the thin gold film 26 in the formation part of groove | channel 25a, 25b. It is sectional drawing of the state which formed the thin film 27 in groove | channel 25a, 25b in which formation of the thin film 26 was completed. It is sectional drawing for demonstrating the grinding process with respect to the intermediate body 20 for thermoelectric thin film element manufacture. It is sectional drawing of the state from which the conductor parts for detection 26a and 27a of the bottom part in the groove | channel 25b were removed by the grinding process. It is sectional drawing of the state from which the detection conductor parts 26a and 27a of the bottom part in the groove | channel 25a were removed by the grinding process. It is sectional drawing for demonstrating the process which cut | disconnects the intermediate body 20 for thermoelectric thin film element manufacture which completed the grinding process. It is sectional drawing of the sensor 30 for grinding processing. It is a top view for demonstrating the positional relationship of the intermediate body 20A for thermoelectric thin film element manufacture, and the sensors 30 and 30 for grinding processes.

  Embodiments of a method for manufacturing a thermoelectric thin film element according to the present invention will be described below with reference to the accompanying drawings.

  First, a configuration of a grinding apparatus 1 for manufacturing a thermoelectric module 100 as an example of a “thermoelectric module” and a “thermoelectric thin film element” mounted on the thermoelectric module 100 will be described with reference to the accompanying drawings.

  The grinding apparatus 1 shown in FIG. 1 grinds the thermoelectric thin film element manufacturing intermediate 20 shown in FIG. 2 when manufacturing the P-type thermoelectric thin film element 121 and the N-type thermoelectric thin film element 122 in the thermoelectric module 100 shown in FIGS. The process is configured to be executable.

  In this case, as shown in FIGS. 3 and 4, the thermoelectric module 100 heats or cools either one end side or the other end side (either the left side or the right side in both figures). It is configured to be usable as a power generation module that generates and outputs a current by generating a temperature difference between the one end side and the other end side. The thermoelectric module 100 includes a support substrate 110, a main body 120, a spacer 130, and a casing 140. The support substrate 110 is a support body that supports the main body 120 and the spacer 130. As an example, the support substrate 110 is formed in a rectangular shape in plan view having a thickness of about 1 to 2 mm and a side length of about 10 to 50 mm. . As the support substrate 110, a plate body (SOI) in which a silicon oxide film is formed on a flat silicon surface, a plate body formed of a non-conductive material such as engineering plastic or ceramic, or the like is used. Can do.

  The main body 120 includes a plurality of P-type thermoelectric thin film elements 121, a plurality of N-type thermoelectric thin film elements 122, and a plurality of electrode parts 123 and 124. Each P-type thermoelectric thin film element 121 and each N-type thermoelectric thin film element 122 (hereinafter collectively referred to as “thermoelectric thin film elements 121, 122”) are formed into a thin film according to a thermoelectric thin film element manufacturing method described later. A thermoelectric element formed in a quantum well structure, and as an example, a long strip shape (as an example, length: 16 mm) along a first direction (the direction of arrow X) along the surface of the support substrate 110, (Width: 4 mm long flat plate shape). In addition, about the length of the long direction in the thermoelectric thin film elements 121 and 122, the length (width), thickness, etc. of a short direction, the length of a long direction is 8-8 according to the specification calculated | required by the thermoelectric module 100. Within the range of about 45 mm, the length (width) in the short direction is within the range of about 1 to 8 mm, and the thickness is within the range of about 500.1 to 501.0 μm (in the case of removing the protective layer 15 described later, 0 In a range of about 1 to 1.0 μm).

  As shown in FIG. 5, the P-type thermoelectric thin film element 121 is, for example, a laminate in which thin films 12 containing Si as a dopant in SiGe (80:20 at%) and Si thin films 13 are alternately laminated. Is cut into a desired shape. As an example, the N-type thermoelectric thin film element 122 cuts a laminated body in which a thin film 12 a containing Si as a dopant in SiGe (80:20 at%) and a thin film 13 of Si are alternately laminated into a desired shape. Manufactured. The “thin film” constituting the thermoelectric thin film elements 121 and 122 is not limited to the structure of the thin film 12 (12a) and 13, and various semiconductor materials such as Si, Ge, Te, Bi, and PbTe are used. A thin film formed by including any one of P, Sb, N, and B as a dopant in one of the films and a thin film formed by using one of the various semiconductor materials are alternately stacked. The laminated body can be manufactured by cutting into a desired shape.

  In this case, in this thermoelectric module 100, each thermoelectric thin film element 121, 122 is in a second direction (in this example, the direction of arrow Y shown in FIG. 4: the first direction) intersecting the first direction. Arranged alternately on one side (upper side in FIG. 3) of the support substrate 110 in a state of being alternately arranged along a direction of an arrow X, and supported by the electrode parts 123 and 124 and the spacer 130. Yes. The thermoelectric thin film elements 121 and 122 are alternately connected in series by the electrode parts 123 and 124.

  The electrode portion 123 is an end portion on one side of the thermoelectric thin film elements 121 and 122 on one side (in this example, the left side in FIGS. 3 and 4) of both end portions in the first direction of the support substrate 110. (In this example, the left side end portions in both figures) are electrically connected to each other. The electrode portion 124 is an end portion on the other side of the thermoelectric thin film elements 121 and 122 on the other side (in this example, the right side in FIGS. 3 and 4) of both end portions in the first direction of the support substrate 110. (In this example, the ends on the right side in both figures) are electrically connected to each other. As an example, the electrode parts 123 and 124 are formed in a rectangular shape in plan view with a thickness of about 1 mm using a conductive material such as Cu or Au.

  In this case, in this thermoelectric module 100, the electrode portion 123 is fixedly bonded (fixed) to both the thermoelectric thin film elements 121 and 122 and the support substrate 110 with a conductive adhesive, and the conductive adhesive. The electrode portion 124 is fixedly adhered (fixed) to the thermoelectric thin film elements 121 and 122 by the agent and allowed to slide along the first direction (the direction of arrow X in the figure) with respect to the support substrate 110. In this state, it is supported by the support substrate 110. In addition, about the electrode parts 123 and 124 and the electrode part 125 mentioned later, it can replace with adhesion | attachment by an adhesive agent and can also be made to adhere by heat welding.

  In addition, as shown in FIG. 4, in this thermoelectric module 100, electrode portions 125 are respectively connected to both ends of series connection in thermoelectric thin film elements 121, 122 alternately connected in series by electrode portions 123, 124. The output terminal 126 attached to one end side of the support substrate 110 (in this example, the left end side in the figure) and the electrode portion 125 are electrically connected to each other via the connection conductor 127. In this case, the electrode part 125 is formed of a conductive material such as Cu or Au to a thickness of about 1 mm, for example, in the same manner as the electrode parts 123 and 124 described above.

  As shown in FIG. 3, the spacer 130 is disposed between the thermoelectric thin film elements 121 and 122 and the support substrate 110 and allows the thermoelectric thin film elements 121 and 122 to slide along the first direction, The thermoelectric thin film elements 121 and 122 can be supported. As an example, the spacer 130 is formed in a flat plate shape having a thickness of about 1 mm, which is equivalent to the electrode portions 123 and 124, using a nonconductive material such as engineering plastic or ceramic. The casing 140 is a casing for protecting the main body 120 formed on the support substrate 110, and is formed in a box shape having a bottom opening as a whole with a heat-resistant material such as engineering plastic having a thickness of about 1 mm. .

  In this case, the thermoelectric thin film element manufacturing intermediate 20 (hereinafter, also simply referred to as “intermediate 20”) for manufacturing both thermoelectric thin film elements 121 and 122 in the thermoelectric module 100 is the thermoelectric thin film element shown in FIG. It is manufactured using a production intermediate 10 (hereinafter also simply referred to as “intermediate 10”). As an example, the intermediate 10 has the above-described manufacturing support substrate 11 (an example of a “support substrate”) made of SOI having a thickness (thickness T1 shown in FIGS. 6 to 14) of about 0.6 mm. The thin film 12 (12a) and the thin film 13 (an example of “a plurality of thin films constituting a thermoelectric thin film element”) are provided with a laminate 14 formed by alternately laminating. In the figure, in order to facilitate understanding of the configuration of the intermediate body 10, a state in which the thin films 12 (12 a) and the thin films 13 of several layers are alternately stacked is illustrated. In the intermediate 10, as an example, the thin film 12 (12 a) having a thickness of about 5 nm and the thin film 13 having a thickness of about 5 nm are alternately formed, and the thin film 12 (12 a) having a total of about 30 to 100 layers (for example, 60 layers). , 13 (thickness T4 shown in FIGS. 6 to 14) is provided with a laminate 14 having a thickness of about 0.1 to 1.0 μm (as an example, 0.3 μm).

Moreover, the intermediate body 20 manufactured using the intermediate body 10 is formed in a long strip shape as a whole, as shown in FIG. 6 and 15 to be referred to later, in order to facilitate understanding of the configuration of the intermediate body 20 and the manufacturing method thereof, the thickness of each component constituting the intermediate body 20 is set to be larger than the actual thickness. In addition to being shown thick, the ratio of the thickness of each component is also illustrated at a ratio different from the actual ratio. In FIG. 2, in order to facilitate understanding of the manufacturing method of the thermoelectric thin film elements 121 and 122, as an example, the intermediate body 20 that can simultaneously manufacture the four thermoelectric thin film elements 121 and 122 is illustrated. The configuration of the “intermediate for manufacturing a thermoelectric thin film element” is not limited to this, and one “thermoelectric thin film element” can be manufactured or two or more arbitrary numbers of “thermoelectric thin film elements” can be manufactured simultaneously. Things can be used. This intermediate 20 has a protective film (as an example, a thin film of alumina (Al ₂ O ₃ )) 15 having a thickness (thickness T5 shown in FIGS. 6 to 14) of about 500 μm on the surface of the laminate 14 in the intermediate 10. As described above, the sensor parts 21a and 21b corresponding to the “grinding processing sensor part” in the state of being cut into a long strip shape (hereinafter also referred to as “sensor part 21” when not distinguished). Is formed.

  As shown in FIG. 6, the sensor unit 21 includes, for example, gold (Au) in grooves 25 a and 25 b that penetrate the protective film 15 and the laminated body 14 and reach the manufacturing support substrate 11 and have a width of about 2 mm. ) And a stainless steel thin film 27 are formed in this order to form a “detecting conductor portion” and a “connecting lead portion” and filled with a non-conductive material 28. . Specifically, in the intermediate body 20 of this example, the groove 25 a corresponds to a “first concave portion”, and the detection conductor portion 26 a formed on the bottom side of the groove 25 a in the thin film 26 and the groove 25 a in the thin film 27. Together with the detection conductor portion 27a formed on the bottom side of this, a “first detection conductor portion” is formed. Further, in the intermediate body 20 of this example, the groove 25 b corresponds to a “second recess”, and the detection conductor portion 26 a formed on the bottom side of the groove 25 b in the thin film 26 and the bottom side of the groove 25 b in the thin film 27. The “detecting conductor portion 27a” formed together with the detecting conductor portion 27a constitutes a “second detecting conductor portion”. Furthermore, in the intermediate body 20 of this example, the lead part 26b formed on the side surface side of the grooves 25a and 25b in the thin film 26, the lead part 27b formed on the side surface side of the grooves 25a and 25b in the thin film 27, and the thin film 26 Together with the pad portion 26c formed at the mouth edge of the grooves 25a, 25b, a "connecting lead portion" is formed.

  Further, in this intermediate body 20, the surface of the detection conductor portion 27a in the groove 25a is subjected to a grinding end position (intermediate body in FIG. 5) at which grinding (finish grinding) to the manufacturing support substrate 11 is to be finished in the grinding process described later. 10 from the depth Da of the groove 25a and the thickness Ta (depth Da) of the “first detection conductor portion” so as to be located at the same depth as the manufacturing support substrate 11 in FIG. The sensor portion 21a is configured by defining a length obtained by subtracting the distance La from the edge portion of the groove 25a to the surface of the thin film 27). Further, in this intermediate body 20, the surface of the detection conductor portion 27 a in the groove 25 b is positioned at the same depth as the rough grinding end position where the rough grinding for the manufacturing support substrate 11 is to be finished in the grinding process described later. The depth Db of the groove 25b and the thickness Tb of the “second detection conductor” (the length obtained by subtracting the distance Lb from the mouth edge of the groove 25b to the surface of the thin film 27 from the depth Db) are defined. The sensor unit 21b is configured.

  In addition, although mentioned later in detail, in the intermediate body 20 of this example, the thin film 26 in both the grooves 25a and 25b is simultaneously formed by one film forming process, and the thin film 27 in both the grooves 25a and 25b is 1 It is formed at the same time by a number of film forming processes. For this reason, the thicknesses Ta and Tb are equal to each other. Therefore, in the intermediate body 20 of this example, the height of the surface of the “first detection conductor portion” and the height of the surface of the “second detection conductor portion” are different depending on the depths Da and Db of the grooves 25a and 25b. Is different. Specifically, in the intermediate body 20 of this example, as an example, when the thickness T5 of the protective film 15 is 500 μm, the thickness T4 of the laminate 14 is 0.3 μm, and the thicknesses Ta and Tb are 0.15 μm. In addition, the depth Da of the groove 25a is 500 + 0.30 + 0.15 + 0.05 = 500.5 μm, and the depth Db of the groove 25b is 500 + 0.30 + 0.15 + 0.15 = 500.6 μm.

  On the other hand, the grinding apparatus 1 is a so-called “lapping polishing apparatus”, and as shown in FIG. 1, a surface plate 2, a motor 3, a holder 4, a vertical movement mechanism 5, a measurement unit 6, a slurry supply unit 7 and a control. A portion 8 is provided. In this example, as will be described later, the two thermoelectric thin film elements 121 and 122 are manufactured by executing rough grinding and finish grinding on the intermediate body 20 using two grinding apparatuses 1 having the same configuration. However, since both the grinding machines 1 are different only in the slurry for grinding used in the grinding process and the rotational speed of the surface plate 2, the grinding machine 1 for rough grinding and the grinding machine 1 for finish grinding are different from each other. The configuration will be described without distinction. The surface plate 2 corresponds to a “grinding surface plate”. In this example, the surface plate 2 is constituted by a lap surface plate made of tin (Sn) having a diameter of 350 mm. The motor 3 rotates the surface plate 2 at a constant speed according to the control signal S2 from the control unit 8.

  The holder 4 is configured to hold the intermediate body 20 as will be described later, and is provided with a connection terminal (not shown) that can be electrically connected to the pad portion 26c of the intermediate body 20 as described later. And connected to the measuring unit 6 through a signal cable 6a. The vertical movement mechanism 5 moves the intermediate body 20 toward and away from the surface plate 2 by moving the holder 4 up and down in accordance with a control signal S4 from the control unit 8. In this case, the vertical movement mechanism 5 is configured such that the inclination of the holder 4 with respect to the processing surface F2 of the surface plate 2 can be finely adjusted. As shown in FIG. 1, the measurement unit 6 is connected to the pad units 26c and 26c of the intermediate body 20 via the signal cable 6a, and in accordance with the control signal S3 from the control unit 8, the “first detection conductor” Part "and" second detection conductor "(measurement parameters such as resistance value, current value and voltage value: resistance value in this example) It outputs to the control part 8 as Sa.

  In accordance with the control signal S1 from the control unit 8, the slurry supply unit 7 supplies polishing slurry and oil for slurry dilution to the processing surface F2 of the surface plate 2 through the nozzle 7a. In this example, as an example, a diamond slurry (1/4 μ slurry, 1/2 μ slurry, 1 μ slurry, etc.) containing diamond particles having an average particle diameter of 1 μm to 1/4 μm is used. Specifically, in this example, as an example, the grinding apparatus 1 that performs rough grinding uses 1 μ slurry, and the grinding apparatus 1 that performs finish grinding uses 1/4 μ slurry.

  The control unit 8 generally controls the grinding device 1. Specifically, the control unit 8 supplies the slurry for polishing to the processing surface F <b> 2 of the surface plate 2 by outputting a control signal S <b> 1 to the slurry supply unit 7. In addition, the control unit 8 rotates the surface plate 2 at a constant speed by outputting a control signal S2 to the motor 3, and outputs a control signal S3 to the measurement unit 6 to perform a resistance value measurement process. Let it run. Further, the control unit 8 outputs a control signal S4 to the vertical movement mechanism 5, thereby bringing the holding tool 4 closer to the processing surface F2 of the surface plate 2 and moving the intermediate body 20 to the processing surface F2. Press (starts the “grinding process”).

  Further, the control unit 8 analyzes the measurement result signal Sa from the measurement unit 6 so that the resistance value between both ends along the bottom surface of the groove 25b in the detection conductor portions 26a and 27a in the groove 25b is infinite. When this happens, the control signal S4 is output to the vertical movement mechanism 5 to move the holder 4 in the direction away from the processing surface F2 of the surface plate 2, thereby separating the intermediate body 20 from the processing surface F2, and manufacturing. The rough grinding on the supporting substrate 11 is finished. Further, the control unit 8 analyzes the measurement result signal Sa from the measurement unit 6 so that the resistance value between both ends along the bottom surface of the groove 25b in the detection conductor portions 26a and 27a in the groove 25a is infinite. When this happens, the control signal S4 is output to the vertical movement mechanism 5 to move the holder 4 in the direction away from the processing surface F2 of the surface plate 2, thereby separating the intermediate body 20 from the processing surface F2, and manufacturing. The finish grinding for the supporting substrate 11 is finished.

  Next, a method for manufacturing the thermoelectric module 100 will be described with reference to the accompanying drawings.

In manufacturing the thermoelectric module 100, first, the thermoelectric thin film elements 121 and 122 are manufactured. In manufacturing the thermoelectric thin film elements 121 and 122, the intermediate body 20 is manufactured using the intermediate body 10 shown in FIG. Specifically, as an example, a manufacturing support substrate 11 having a diameter of 6 inches is set in a sputtering apparatus, and thin films 12 and thin films 13 are alternately formed on the surface of the manufacturing support substrate 11 to form a P-type thermoelectric thin film element. The intermediate body 10 including the multilayer body 14 for 121 is manufactured, and the multilayer body 14 for the N-type thermoelectric thin film element 122 is provided by alternately forming the thin films 12 a and the thin films 13 on the surface of the manufacturing support substrate 11. Intermediate 10 is manufactured. Next, as shown in FIG. 7, a protective film 15 having a thickness T5 of about 500 μm is formed on the surface of the laminate 14 with Al ₂ O ₃ (execution of “protective film forming process”). Subsequently, the intermediate body 10 on which the formation of the protective film 15 has been completed is set in a cutting device (not shown) and cut into a long strip shape. In this case, in this example in which the four thermoelectric thin film elements 121 and 122 are manufactured from one intermediate body 20, as an example, the strip is cut into a strip shape having a width of about 4 mm and a length of about 80 mm.

  Next, a metal mask (not shown) is disposed on the surface of the cut out small piece where the protective film 15 is formed, and an ion beam etching process is performed, thereby penetrating the protective film 15 and the stacked body 14 as shown in FIG. Then, a groove 25a having a depth Da reaching the bottom to the manufacturing support substrate 11 is formed. Subsequently, another metal mask (not shown) is arranged on the formation surface of the protective film 15 in the small piece in which the formation of the groove 25a is completed, and an ion beam etching process is performed, as shown in FIG. A groove 25b having a depth Db that penetrates the film 15 and the laminated body 14 and reaches the bottom of the manufacturing support substrate 11 is formed. The order of forming the grooves 25a and 25b is not limited to the above example. Specifically, a method of forming the groove 25b prior to the groove 25a can be employed. In the above example, a part of the groove 25b on the rim side (the depth of the groove 25a) is formed when the groove 25a is formed. And then forming a groove 25b having a depth Db by etching a portion where the groove 25b is formed by the difference in depth between the groove 25a and the groove 25b. Can also be adopted.

  Next, another metal mask (not shown) is further disposed on the surface of the protective film 15 where the grooves 25a and 25b have been formed, and a sputtering process is performed. As shown in FIG. A thin film 26 of gold (Au) is formed from the rim portions of 25a and 25b to the bottom surface. Thereby, the detection conductor portion 26a, the lead portion 26b, and the pad portion 26c are formed. Subsequently, another metal mask (not shown) is further disposed on the surface of the small film on which the formation of the thin film 26 has been formed, and a sputtering process is performed, thereby forming the groove 25a as shown in FIG. , 25b, a stainless steel thin film 27 is formed from the side surface to the bottom surface. Thereby, the detection conductor part 27a and the lead part 27b are formed.

  Thus, the formation of the “first detection conductor portion”, the “second detection conductor portion”, and the “connection lead portion” is completed, and the surface of the detection conductor portion 27a in the groove 25a is supported for manufacturing. A rough grinding end position at which the surface of the detection conductor portion 27a in the groove 25b is to finish rough grinding on the manufacturing support substrate 11 is located at the same depth as the grinding end position at which finish grinding on the substrate 11 is to be finished. It will be in the state located in the same depth. Thereafter, by filling the grooves 25a and 25b with the non-conductive material 28, the “sensor portion forming process” is completed, and the intermediate body 20 is completed as shown in FIGS.

  Next, a grinding process is performed on the intermediate body 20. Specifically, first, the intermediate body 20 is held by the holder 4 with the manufacturing support substrate 11 facing downward. Specifically, as an example, a thermoreversible adhesive is melt-applied between the surface of the protective film 15 and the lower surface of the holder 4 in the intermediate body 20, and the intermediate body 20 is attached to the holder 4. At this time, the connection terminals (not shown) formed on the holder 4 and the pad portions 26c of the intermediate body 20 are brought into contact with each other, so that the detection conductor portions 26a and 27a in the grooves 25a and 25b The lead portions 26b and 27b, the pad portion 26c, the connection terminals of the holder 4, and the signal cable 6a are connected to the measuring portion 6.

  Next, an operation unit (not shown) of the grinding apparatus 1 is operated to charge the polishing slurry on the processing surface F2 of the surface plate 2. At this time, the slurry supply unit 7 drops slurry for rough grinding and hydrocarbon-based oil onto the processing surface F2 in accordance with the control signal S1 from the control unit 8. Next, the surface plate 2 is rotated in a state where a ring-shaped jig (not shown) made of aluminum oxide is placed on the processing surface F <b> 2 of the surface plate 2. At this time, the surface plate 2 is rotated by the motor 3 so that the above-mentioned jig is rotated on the processing surface F2, and the dropped slurry and oil are leveled in the groove portion of the processing surface F2. Embed a mixture of slurry and oil. Thus, the rough grinding preparation work is completed.

  Subsequently, an operation unit (not shown) is operated to start the grinding process. At this time, the control unit 8 outputs the control signal S2 to the motor 3 to rotate the surface plate 2 at a constant speed, and outputs the control signal S4 to the vertical movement mechanism 5 so that the surface plate 2 The holder 4 (intermediate body 20) is brought closer to the second processing surface F2. Further, the control unit 8 outputs a control signal S3 to the measurement unit 6 to start a measurement process of the resistance values of the detection conductor portions 26a and 27b in the sensor unit 21b of the intermediate body 20.

  Specifically, when the holder 4 is moved toward the surface plate 2 by the vertical movement mechanism 5, first, the surface of the manufacturing support substrate 11 in the intermediate body 20 abuts on the processing surface F 2 of the surface plate 2. . At this time, since the surface plate 2 is rotated by the motor 3, the intermediate body 20 (manufacturing support substrate 11) held by the holder 4 is slid relative to the surface plate 2. It is done. Thereby, as shown in FIG. 12, the support substrate 11 for manufacture in the intermediate body 20 is ground (lapped) and gradually thinned. At this time, since the sensor portion 21b (detection conductor portions 26a and 27a) is not in contact with the processing surface F2 of the surface plate 2, only the manufacturing support substrate 11 in the intermediate body 20 is ground. Therefore, the measurement unit 6 measures the initial resistance values of the detection conductor parts 26a and 27a, and the control unit 8 determines the detection conductor part of the sensor part 21b based on the measurement result signal Sa from the measurement part 6. It is determined that 26a and 27a are not ground.

  On the other hand, when the grinding process for the intermediate body 20 proceeds and the bottom surface of the groove 25b in the sensor portion 21b comes into contact with the processing surface F2 of the surface plate 2, the manufacturing support substrate 11 below the bottom surface of the groove 25b is ground. After that, not only the manufacturing support substrate 11 but also the detection conductor portion 26a in the sensor portion 21b is ground together with the manufacturing support substrate 11. Further, when the grinding process for the intermediate body 20 further proceeds and the detection conductor portion 26a in the sensor portion 21b and the manufacturing support substrate 11 below the detection conductor portion 26a are ground, the sensor portion 21b The detection conductor portion 27 a is ground together with the manufacturing support substrate 11. At this time, as the detection conductor portions 26a and 27a are ground and gradually become thinner, the resistance value of the sensor portion 21b measured by the measuring portion 6 gradually increases.

  Subsequently, the grinding process for the intermediate body 20 further proceeds, and as shown in FIG. 13, the detection conductor portion 27a of the sensor portion 21b and the manufacturing support substrate 11 below the detection conductor portion 27a are ground. When this is done, the resistance value of the sensor unit 21b measured by the measurement unit 6 becomes infinite (an example of “when an electrical parameter associated with the disappearance of the second detection conductor” is measured). . At this time, the control unit 8 outputs a control signal S4 to the vertical movement mechanism 5 to separate the holder 4 (intermediate body 20) from the surface plate 2, and outputs a control signal S2 to the motor 3. And stop. Thereby, the rough grinding with respect to the intermediate body 20 (support substrate 11 for manufacture) is completed.

  Next, the intermediate body 20 that has been subjected to the rough grinding with respect to the manufacturing support substrate 11 is removed from the holder 4 and is held by the holder 4 in the grinding apparatus 1 for finish grinding. In addition, about the attachment method of the intermediate body 20 with respect to the holder 4, etc., since it is the same as the above-mentioned series of procedures, description is abbreviate | omitted. Subsequently, the operation unit (not shown) of the grinding apparatus 1 is operated to embed a mixture of slurry and oil for finish grinding on the processing surface F2 of the surface plate 2, and then the operation unit (not shown) is operated to perform finish grinding. Let it begin. At this time, the control unit 8 outputs the control signal S2 to the motor 3 to rotate the surface plate 2 at a constant speed, and outputs the control signal S4 to the vertical movement mechanism 5 so that the surface plate 2 The holder 4 (intermediate body 20) is brought closer to the second processing surface F2. Further, the control unit 8 outputs a control signal S <b> 3 to the measurement unit 6, thereby starting measurement processing of the resistance values of the detection conductor portions 26 a and 27 b in the sensor unit 21 a of the intermediate body 20.

  In this case, first, the manufacturing support substrate 11, the lead portions 26b and 27b of the sensor portion 21b, and the nonconductive material 28 are ground (lapped), and the manufacturing support substrate 11 is gradually thinned. At this time, since the sensor unit 21a (detection conductor portions 26a and 27a) is not in contact with the processing surface F2 of the surface plate 2, the measurement unit 6 determines the initial resistance values of the detection conductor portions 26a and 27a. It is measured as the resistance value of the sensor unit 21a. Therefore, the control unit 8 determines based on the measurement result signal Sa from the measurement unit 6 that the detection conductor portions 26a and 27a of the sensor unit 21a are not ground.

  On the other hand, when the grinding process for the intermediate body 20 proceeds and the bottom surface of the groove 25a in the sensor portion 21a comes into contact with the processing surface F2 of the surface plate 2, the manufacturing support substrate 11 below the bottom surface of the groove 25a is ground. After that, not only the support substrate 11 for manufacturing but also the detection conductor portion 26a in the sensor portion 21a is ground together with the support substrate 11 for manufacturing. Further, when the grinding process on the intermediate body 20 further proceeds and the detection conductor portion 26a in the sensor portion 21a and the manufacturing support substrate 11 below the detection conductor portion 26a are ground, the sensor portion 21a The detection conductor portion 27 a is ground together with the manufacturing support substrate 11. At this time, as the detection conductor portions 26a and 27a are ground and gradually become thinner, the resistance value of the sensor portion 21a measured by the measuring portion 6 gradually increases.

  Subsequently, the grinding process for the intermediate body 20 further proceeds, and as shown in FIG. 14, the detection conductor portion 27a of the sensor portion 21a and the manufacturing support substrate 11 below the detection conductor portion 27a are ground. When this is done, the resistance value of the sensor unit 21a measured by the measuring unit 6 becomes infinite (an example of “when an electrical parameter associated with the disappearance of the first detection conductor” is measured). . At this time, the control unit 8 outputs a control signal S4 to the vertical movement mechanism 5 to separate the holder 4 (intermediate body 20) from the surface plate 2, and outputs a control signal S2 to the motor 3. And stop. Thereby, the finish grinding for the intermediate 20 (manufacturing support substrate 11) is completed, and the grinding process for thinning the manufacturing support substrate 11 is completed.

  Next, after removing the intermediate body 20 from the holder 4, the sensor parts 21a and 21b are cut and removed by cutting the intermediate body 20 at a position indicated by a broken line in FIG. Thereby, the thermoelectric thin film elements 121 and 122 are completed. In this case, when the thickness of each part in the length direction of the thermoelectric thin film elements 121 and 122 manufactured according to the above-described series of manufacturing methods was measured, both were substantially uniform at about 50.35 ± 0.005 μm. It was. Therefore, by grinding the production support substrate 11 according to the production method described above, the thickness of the production support substrate 11 finally remaining can be set to about 0.05 μm in each part in the longitudinal direction.

  Next, for example, the electrode parts 123 to 125 are manufactured by cutting a Cu plate into a desired size. Subsequently, the electrode portions 123 and 125 and the spacer 130 are bonded to the predetermined position on the support substrate 110 with an adhesive, and the electrode portions 124 are disposed at the predetermined position on the support substrate 110. The thermoelectric thin film elements 121 and 122 are bonded to the surfaces of the electrode parts 123 to 125 with an adhesive. Accordingly, the electrode portion 123 is fixedly bonded to both the thermoelectric thin film elements 121 and 122 and the support substrate 110 by an adhesive, and the electrode portion 124 is fixedly bonded to the thermoelectric thin film elements 121 and 122 by an adhesive. And is supported by the support substrate 110 while being allowed to slide along the first direction relative to the support substrate 110 (in the direction of the arrow X in FIGS. 3 and 4). Part 120 is formed. Thereafter, the electrode portion 125 and the output terminal 126 are connected by the connecting conductor 127, and the casing 140 is attached to the support substrate 110 so as to cover the main body portion 120, whereby as shown in FIGS. Module 100 is completed.

  When the thermoelectric module 100 is used, as an example, in the state in which both the output terminals 126 and 126 are connected to the current supply object by a connection cable (not shown), the end portion on the side where the output terminals 126 and 126 are provided ( The end portion on the side where the thermoelectric thin film elements 121 and 122 are connected to each other by the electrode portion 123 is brought close to the heat source, and the end portion on the side where the output terminals 126 and 126 are not provided (the thermoelectric film is formed by the electrode portion 124). Ends on the side where the thin film elements 121 and 122 are connected to each other are projected into the atmosphere. In this case, the end on the side where the output terminals 126 and 126 are not provided may be brought close to the heat source, and the end on the side where the output terminals 126 and 126 are provided may protrude into the atmosphere. As a result, the end portion on the heat source side in the thermoelectric module 100 is heated, and a temperature difference is generated between the end portion on the heat source side and the end portion on the side projecting into the atmosphere. A potential difference is generated in the unit 120, and current is output from the output terminals 126 and 126 to the current supply target. Since the above Seebeck effect is publicly known, detailed description thereof is omitted.

  In this case, in the thermoelectric module 100, as described above, the thickness of the manufacturing support substrate 11 remaining in the thermoelectric thin film elements 121 and 122 is sufficiently thin. For this reason, in this thermoelectric module 100, when one end part of each thermoelectric thin film element 121,122 is heated (or cooled), this heat is the other end of each thermoelectric thin film element 121,122 by the support substrate 11 for manufacture. A situation where heat is transferred to the side in a short time is avoided. Thereby, the situation where the temperature difference produced between the both ends of each thermoelectric thin film element 121 and 122 is averaged for a short time is avoided.

  As described above, in the method of manufacturing the thermoelectric thin film elements 121 and 121, the “sensor portion forming process” and the “grinding process” are executed in this order, and any one of the P-type thermoelectric thin film element 121 and the N-type thermoelectric thin film element 122 is performed. In the “sensor portion forming process”, the groove is so positioned that the surface of the detection conductor portion 27a in the sensor portion 21a is located at the same depth as the grinding end position at which grinding on the manufacturing support substrate 11 is to be finished. By defining the depth Da of 25a and the thickness Ta of the detection conductor portions 26a and 27a in the sensor portion 21, the groove 25a, the detection conductor portions 26a and 27a, the lead portions 26b and 27b, and the pad portions 26c and 26c are formed. In the grinding process, the electrical parameters (in this example, the resistance value) of the detection conductor portions 26a and 27a of the sensor portion 21a are measured while manufacturing. When the holding substrate 11 and the sensor portion 21a are ground and an electrical parameter (in this example, an infinite resistance value) associated with the disappearance of the detection conductor portions 26a and 27a is measured, the manufacturing support substrate 11 and the sensor part 21a are finished.

  Therefore, according to the manufacturing method of the thermoelectric thin film elements 121 and 121, unlike the method of grinding the support substrate by managing the grinding processing time, the sensor unit 21a is used for detection when the intermediate 20 for manufacturing the thermoelectric thin film element is manufactured. By simply aligning the position of the surface of the conductor portion 27a with the position at which grinding on the manufacturing support substrate 11 is to be finished, grinding is performed in accordance with the progress of the grinding process on the thermoelectric thin film element manufacturing intermediate 20 during the grinding process. Based on the electrical parameters (resistance values) of the detection conductor portions 26a and 27a, it is possible to reliably and easily identify the end timing of the grinding process for the intermediate 20 for manufacturing the thermoelectric thin film element. The manufacturing support substrate 11 having high thermal conductivity can be sufficiently thinned without being mistakenly ground. Thereby, the thermoelectric characteristic of the thermoelectric module 100 which mounts the thermoelectric thin film element 121,122 manufactured according to this manufacturing method can fully be improved.

  Moreover, according to the manufacturing method of the thermoelectric thin film elements 121 and 121 according to the present invention, the “protective film forming process” for forming the protective film 15 on the surface of the multilayer body 14 is executed prior to the “sensor part forming process”. At the same time, in the “sensor part forming process”, the manufacturing support substrate 11 is ground by forming grooves 25 a and 25 b having depths that reach the manufacturing support substrate 11 through the protective film 15 and the laminated body 14. The thin thermoelectric thin film element manufacturing intermediate 20 is removed from the holder 4 or the thermoelectric thin film element manufacturing intermediate 20 that has been ground is transported to the next working position. A situation in which the element manufacturing intermediate 20 is damaged can be avoided.

  Furthermore, in the manufacturing method of the thermoelectric thin film elements 121, 121 according to the present invention, in the “sensor part forming process”, the surface of the detection conductor part 27a in the sensor part 21b should be finished with rough grinding on the manufacturing support substrate 11. By defining the depth Db of the groove 25b and the thickness Tb of the detection conductor portions 26a and 27a in the sensor portion 21b so as to be located at the same depth as the grinding end position, the groove 25b, detection conductor portions 26a and 27a, leads The electric parameters (in this example, infinite resistance value) associated with the disappearance of the detection conductor portions 26a and 27a in the sensor portion 21b are formed in the grinding process by forming the portions 26b and 27b and the pad portions 26c and 26c. When measured, the rough grinding of the manufacturing support substrate 11 and the sensor portion 21b is finished, and the finishing grinding of the manufacturing support substrate 11 is performed. At the same time, when the electrical parameter (infinite resistance value) associated with the disappearance of the detection conductor portions 26a and 27a in the sensor portion 21a is measured, finish grinding is performed on the manufacturing support substrate 11 and the sensor portion 21a. finish.

  Therefore, according to the manufacturing method of the thermoelectric thin film elements 121 and 121, the surface position of the detection conductor portion 27a in the sensor portion 21b is roughly ground on the manufacturing support substrate 11 when the thermoelectric thin film element manufacturing intermediate 20 is manufactured. The electrical parameters (resistance values) of the detection conductor portions 26a and 27a that are ground in accordance with the progress of the grinding process on the thermoelectric thin film element manufacturing intermediate 20 are simply adjusted to the positions to be finished. As a result, it is possible to reliably and easily specify the timing of the end of the rough grinding for the intermediate body 20 for manufacturing the thermoelectric thin film element. It is possible to avoid accidental grinding. Thereby, the thermoelectric characteristic of the thermoelectric module 100 which mounts the thermoelectric thin film element 121,122 manufactured according to this manufacturing method can be improved reliably.

  Further, according to the method of manufacturing the thermoelectric thin film elements 121 and 121 according to the present invention, the grooves 25a and 25b in which the formation of the lead portions 26b and 27b and the detection conductor portions 26a and 27a are completed in the “sensor portion forming process”. By filling the inside with the non-conductive material 28, the thinned detection conductor portion 27a is broken at the time when the manufacturing support substrate 11 is not ground to the position where the grinding process should be finished. Thus, although the detection conductor portion 27a is misunderstood as having progressed to the position where it should disappear, or the manufacturing support substrate 11 has been ground to the position where the grinding process should be terminated, the thinned detection purpose is detected. The conductor portion 27a is deformed so as to be pushed up by the surface plate 2 without disappearing, and as a result, the grinding has not progressed to the position where the detecting conductor portion 27a should disappear. And avoid a situation where or is mistaken, the supporting substrate for preparing a 11 position to be terminated grinding process can reliably eliminate the detection conductor portion 27a at the time of the grinding. Thereby, the thermoelectric characteristic of the thermoelectric module 100 which mounts the thermoelectric thin film elements 121 and 122 manufactured according to this manufacturing method can be improved further.

  Next, another embodiment of the method for manufacturing a thermoelectric thin film element according to the present invention will be described with reference to the accompanying drawings. In addition, about the grinding device 1 used at the time of manufacture of said thermoelectric thin film element 121,122, and the component which has a function similar to the intermediate bodies 10 and 20, the same code | symbol is attached | subjected and the overlapping description is abbreviate | omitted.

In the above manufacturing method, the “sensor part forming process” is executed prior to the “grinding process”, and the “sensor part for grinding process” is formed in the “intermediate for manufacturing the thermoelectric thin film element”. The “grinding sensor” in which the elements corresponding to the sensor portions 21a and 21b in the intermediate body 20 are formed separately from the “intermediate body for manufacturing a thermoelectric thin film element” is ground together with the “intermediate body for manufacturing a thermoelectric thin film element”. A thermoelectric thin film element can also be manufactured by setting and grinding to an apparatus. Specifically, in this manufacturing method, a grinding processing sensor 30 shown in FIG. 16 is prepared in advance. As an example, the grinding processing sensor 30 is configured by forming sensor portions 21 a and 21 b on a base material 31 formed of alumina (Al ₂ O ₃ ).

  On the other hand, when manufacturing the thermoelectric thin film elements 121 and 122, first, the protective film 15 is formed on the surface of the laminated body 14 in the intermediate body 10 described above (execution of “protective film forming process”) to manufacture the thermoelectric thin film element. An intermediate 20A (see FIGS. 5 and 7: hereinafter, also referred to as “intermediate 20A”) is manufactured. Next, the intermediate body 20A is set on the holder 4 of the grinding apparatus 1 with the manufacturing support substrate 11 facing downward, and as an example, as shown in FIG. 17, the intermediate body 20A is positioned at both ends in the longitudinal direction of the intermediate body 20A. In this way, the grinding sensor 30 is set. At this time, the surface of the detection conductor portion 27 a in the sensor portion 21 a is the same position as the “finishing grinding end position (grinding end position)” of the manufacturing support substrate 11 in the intermediate body 20 </ b> A held by the holder 4. And the intermediate body so that the surface of the detection conductor portion 27a in the sensor portion 21b is at the same position as the “rough grinding end position” of the manufacturing support substrate 11 in the intermediate body 20A held by the holder 4. The position of the grinding processing sensor 30 with respect to 20A is finely adjusted and set. Thereby, the positional relationship between the manufacturing support substrate 11 of the intermediate body 20A and the sensor portions 21a and 21b of the grinding sensor 30 is the same as the position of the manufacturing support substrate 11 and the sensor portions 21a and 21b in the intermediate body 20 described above. Same as the relationship.

  Next, the grinding process is started. The grinding process for the intermediate body 20a and the grinding process sensor 30 is the same procedure as the grinding process including the rough grinding and the finish grinding for the intermediate body 20 described above, and a detailed description thereof will be omitted. Thereby, the thermoelectric thin film elements 121 and 122 are completed. In this case, regarding the thermoelectric thin film elements 121 and 122 manufactured according to a series of manufacturing methods using the intermediate 20A and the grinding processing sensor 30, the thickness of each part in the length direction was measured. As with the thermoelectric thin film elements 121 and 122 manufactured in this way, both were approximately uniform at about 50.35 ± 0.008 μm. Therefore, by grinding the production support substrate 11 according to the production method described above, the thickness of the production support substrate 11 finally remaining can be set to about 0.05 μm in each part in the longitudinal direction.

  As described above, in the method of manufacturing the thermoelectric thin film elements 121 and 121, when the grinding process is executed to manufacture any one of the P-type thermoelectric thin film element 121 and the N-type thermoelectric thin film element 122, After setting the grinding processing sensor 30 on the holder 4 of the grinding apparatus 1 so that the surface of the detection conductor portion 27a in the sensor portion 21a is at the same position as the grinding end position at which grinding on the manufacturing support substrate 11 is to be finished. Then, grinding is performed on the manufacturing support substrate 11 and the grinding processing sensor 30 while measuring electrical parameters (in this example, resistance values) of the detection conductor portions 26a and 27a in the sensor portion 21a, and the detection conductor portion When the electrical parameter associated with the disappearance of 26a, 27a (in this example, an infinite resistance value) is measured, It ends grinding for fine grinding sensor 30.

  Therefore, according to the method for manufacturing the thermoelectric thin film elements 121 and 121, unlike the method of grinding the support substrate while managing the grinding processing time, the grinding apparatus 1 includes the intermediate 20A for manufacturing the thermoelectric thin film element and the sensor for the grinding process. When setting 30, the position of the surface of the detection conductor portion 27 a in the sensor portion 21 a is simply aligned with the position where grinding on the manufacturing support substrate 11 should be finished. Based on the electrical parameters (resistance values) of the detection conductor portions 26a and 27a to be ground in accordance with the progress of the grinding process on 20A, the timing of the end of the grinding process on the thermoelectric thin film element manufacturing intermediate 20A is ensured. As a result of being easily specified, the manufacturing support substrate 11 having a high thermal conductivity can be sufficiently obtained without erroneously grinding the laminate 14. It can be thickened. Thereby, the thermoelectric characteristic of the thermoelectric module 100 which mounts the thermoelectric thin film element 121,122 manufactured according to this manufacturing method can fully be improved.

  Further, according to the method for manufacturing the thermoelectric thin film elements 121 and 121, the “protective film forming process” for forming the protective film 15 on the surface of the laminated body 14 in the intermediate body 10 for manufacturing the thermoelectric thin film element is performed prior to the grinding process. When the intermediate body 20A for manufacturing a thermoelectric thin film element that becomes thin by grinding the support substrate 11 for manufacturing is removed from the holder 4, or the intermediate 20A for manufacturing a thermoelectric thin film element that has undergone the grinding process, It is possible to avoid a situation where the thermoelectric thin film element manufacturing intermediate 20A is damaged when transported to the next work position.

  Further, in the method of manufacturing the thermoelectric thin film elements 121 and 121, the surface of the detection conductor portion 27a in the sensor portion 21a of the grinding processing sensor 30 is the same position as the grinding end position, and the detection conductor portion in the sensor portion 21b. After setting the grinding process sensor 30 on the holder 4 so that the surface of 27a is at the same position as the rough grinding end position where the rough grinding for the manufacturing support substrate 11 is to be finished, the detection conductor part 26a of the sensor part 21b is set. , 27a, rough grinding is performed on the manufacturing support substrate 11 and the grinding sensor 30 while measuring electrical parameters (resistance values), and this is associated with the disappearance of the detection conductors 26a, 27a in the sensor unit 21b. When the electrical parameter (infinite resistance value) is measured, the manufacturing support substrate 11 and the grinding process sensor 30 are measured. After the rough grinding is finished, finish grinding for the manufacturing support substrate 11 and the grinding sensor 30 is started, and electrical parameters (infinite) associated with disappearance of the detection conductors 26a and 27a in the sensor unit 21a are started. When the large resistance value) is measured, the finish grinding for the manufacturing support substrate 11 and the grinding sensor 30 is finished.

  Therefore, according to the method of manufacturing the thermoelectric thin film elements 121 and 121, when the thermoelectric thin film element manufacturing intermediate 20A and the grinding processing sensor 30 are set in the holder 4 of the grinding apparatus 1, the detection conductor in the sensor unit 21b. By simply aligning the position of the surface of the portion 27a with the position where the rough grinding for the manufacturing support substrate 11 is to be finished, the grinding is performed according to the progress of the grinding process for the thermoelectric thin film element manufacturing intermediate 20A. Based on the electrical parameters (resistance values) of the detection conductor portions 26a and 27a, it is possible to reliably and easily specify the timing of the end of rough grinding for the thermoelectric thin film element manufacturing intermediate 20A. It is possible to avoid the situation in which the rough grinding of the substrate 11 is performed more than necessary and each laminated body 14 is erroneously ground. Thereby, the thermoelectric characteristic of the thermoelectric module 100 which mounts the thermoelectric thin film element 121,122 manufactured according to this manufacturing method can be improved reliably.

  Further, according to the method of manufacturing the thermoelectric thin film elements 121 and 121, the grinding is performed in which the nonconductive material 28 is filled in the grooves 25a and 25b in which the lead portions 26b and 27b and the detection conductor portions 26a and 27a are formed. By using the processing sensor 30, when the manufacturing support substrate 11 is not ground to the position where the grinding process is to be finished, the thinned detection conductor portion 27a is broken, and this causes detection. Although the conductor part 27a is misunderstood as grinding has progressed to a position where the conductor part 27a should disappear, or the manufacturing support substrate 11 is ground to a position where the grinding process is to be finished, the thinned detection conductor part 27a is provided. It is deformed so as to be pushed up by the surface plate 2 without disappearing, and due to this, it is mistakenly recognized that grinding has not progressed to the position where the detection conductor portion 27a should disappear. Benefit to avoid a situation, the supporting substrate for preparing a 11 position to be terminated grinding process can reliably eliminate the detection conductor portion 27a at the time of the grinding. Thereby, the thermoelectric characteristic of the thermoelectric module 100 which mounts the thermoelectric thin film elements 121 and 122 manufactured according to this manufacturing method can be improved further.

  The “thermoelectric thin film element manufacturing method” is not limited to the above-described method of manufacturing the thermoelectric thin film elements 121 and 122 by grinding the intermediate body 20, the intermediate body 20 </ b> A, and the grinding processing sensor 30 with the grinding device 1. For example, as an example of the process of “relatively sliding the thermoelectric thin film element manufacturing intermediate with respect to the grinding surface plate”, the intermediate 20, the intermediate 20 </ b> A, and the grinding sensor 30 are placed at the processing positions. The example in which the surface plate 2 is rotated in the positioned state has been described. However, the “intermediate for manufacturing the thermoelectric thin film element (or the intermediate for manufacturing the thermoelectric thin film element and the intermediate for manufacturing the thermoelectric thin film element) It is possible to adopt a method of moving and relatively sliding the “grinding sensor”, or “grinding surface plate” and “intermediate for manufacturing a thermoelectric thin film element (or intermediate for manufacturing a thermoelectric thin film element). In addition, a method of moving both of them together and sliding them relative to each other can also be employed. Even when these methods are employed, the same effects as those of the method for manufacturing the thermoelectric thin film elements 121 and 122 can be obtained.

In addition, the example in which the thermoelectric thin film elements 121 and 122 are formed including the protective film 15 formed on the intermediate 10 at the time of manufacturing the intermediates 20 and 20A has been described, but the “protective film” is the “thermoelectric thin film element to be manufactured”. The "protective film" can be removed to form a "thermoelectric thin film element" after the grinding of the "thermoelectric thin film element manufacturing intermediate" is completed. In this case, when a “thermoelectric thin film element” including a “protective film” is used, a material having a sufficiently low thermal conductivity (in the above example, the protective film 15 in the thermoelectric thin film elements 121 and 122 described above). , Al ₂ O ₃ ), the temperature difference generated at both ends of the “thermoelectric thin film element” due to the presence of the “protective film” is averaged in a short time, that is, the “thermoelectric A situation in which improvement of the thermoelectric characteristics of the thermoelectric module equipped with the “thin film element” is hindered can be preferably avoided. Furthermore, as an example of “when an electrical parameter associated with the disappearance of the first detection conductor portion is measured”, an example in which grinding is terminated when “the resistance value becomes infinite” has been described. However, grinding ends when "the value of the current flowing through the first detection conductor part becomes 0 amperes" or "when the voltage value across the first detection conductor part becomes 0 volts" You can also

DESCRIPTION OF SYMBOLS 1 Grinding device 2 Surface plate 3 Motor 4 Holder 5 Vertical movement mechanism 6 Measuring part 7 Slurry supply part 8 Control part 10, 20, 20A Intermediate body for manufacturing a thermoelectric thin film element 11 Support substrate for manufacturing 12, 12a, 13 Thin film 14 Lamination Body 15 Protective film 21a, 21b Sensor part 25a, 25b Groove 26, 27 Thin film 26a, 27a Detection conductor part 26b, 27b Lead part 26c Pad part 28 Non-conductive material 30 Grinding sensor 31 Base material 100 Thermoelectric module 121 P Type thermoelectric thin film element 122 N type thermoelectric thin film element Da, Db depth F2 treatment surface S1-S4 control signal Sa measurement result signal T1, T4, T5, Ta, Tb thickness

Claims (8)

When manufacturing any one of the thermoelectric thin film elements in a thermoelectric module in which P-type thermoelectric thin film elements and N-type thermoelectric thin film elements are alternately connected, a laminate of a plurality of thin films constituting the thermoelectric thin film element is a support substrate. After forming a recess having a depth reaching the support substrate through the laminated body with respect to the thermoelectric thin film element manufacturing intermediate formed on the detection conductor portion and forming the detection conductor portion on the bottom surface of the recess A connection lead portion for connecting both end portions along the bottom surface of the concave portion in the detection conductor portion to the measurement portion is formed in the region including the side surface of the concave portion by the same film formation process as the formation of the detection conductor portion. A sensor part forming process for forming a sensor part for grinding processing on the thermoelectric thin film element manufacturing intermediate formed simultaneously with the formation of the detection conductor part, and the thermoelectric thin film element manufacturing intermediate for the grinding surface plate phase In performing the grinding process with this order of thinned by grinding the supporting substrate by causing to slide,
In the sensor portion forming process, the first recess as the concave portion is positioned so that the surface of the first conductor portion for detection as the conductor portion for detection is at the same depth as a grinding end position at which grinding on the support substrate is to be finished. Defining the depth of one recess and the thickness of the first detection conductor, forming the first recess, the first detection conductor and the connection lead,
In the grinding process, grinding is performed on the support substrate and the grinding sensor part while measuring electrical parameters of the first detection conductor part via the both connection lead parts, The thermoelectric thin film element manufacturing method which complete | finishes grinding with respect to the said support substrate and the said sensor part for grinding processes, when the said electrical parameter linked | related with the loss | disappearance of the conductor part for a detection of this is measured. Prior to the sensor part forming process, a protective film forming process for forming a protective film on the surface of the laminate is performed,
2. The method of manufacturing a thermoelectric thin film element according to claim 1, wherein, in the sensor part forming process, the concave portion having a depth reaching the support substrate through the protective film and the stacked body is formed. In the sensor part forming process, the first recess, the first detection conductor part, and the connection lead part are formed, and the surface of the second detection conductor part as the detection conductor part is The depth of the second concave portion as the concave portion and the thickness of the second detection conductor portion are defined so as to be located at the same depth as the rough grinding end position at which the rough grinding on the support substrate is to be finished, Forming a second recess, the second detection conductor and the connection lead;
In the grinding process, rough grinding is performed on the support substrate and the grinding sensor part while measuring electrical parameters of the second detection conductor part via the both connection lead parts. When the electrical parameter associated with the disappearance of the two detection conductors is measured, the rough grinding of the support substrate and the grinding sensor unit is terminated, and then the support substrate and the grinding process are performed. Finish grinding for the sensor part is started, and finish grinding for the support substrate and the grinding sensor part is finished when the electrical parameter associated with the disappearance of the first detection conductor part is measured. The thermoelectric thin film element manufacturing method according to claim 1 or 2.   The thermoelectric thin film element manufacturing method according to any one of claims 1 to 3, wherein a non-conductive material is filled in the concave portion in which the formation of the connection lead portion and the detection conductor portion is completed in the sensor portion forming process. . When manufacturing any one of the thermoelectric thin film elements in a thermoelectric module in which P-type thermoelectric thin film elements and N-type thermoelectric thin film elements are alternately connected, a laminate of a plurality of thin films constituting the thermoelectric thin film element is a support substrate. When performing the grinding process of grinding and thinning the support substrate by sliding the thermoelectric thin film element manufacturing intermediate formed on the substrate relative to the grinding platen,
The intermediate for manufacturing the thermoelectric thin film element is set in a grinding apparatus, and a first detection conductor is formed on the bottom surface of the first recess formed in the non-conductive base material, and the first detection is performed. A sensor for grinding processing in which first connecting lead portions for connecting both end portions of the conductor portion along the bottom surface of the first concave portion to the measuring portion are formed in a region including the side surface of the first concave portion. Is set in the grinding apparatus so that the surface of the first detection conductor portion is at the same position as the grinding end position at which the grinding of the support substrate is to be finished, and then the first detection conductor portion is passed through the first connection lead portion. And grinding the support substrate and the grinding sensor while measuring the electrical parameters of the first detection conductor, and the electrical associated with the disappearance of the first detection conductor. Parameters are measured The supporting substrate and the thermoelectric thin film device fabrication method of terminating the ground with respect to the grinding processing sensor when.   The thermoelectric thin film element manufacturing method according to claim 5, wherein a protective film forming process for forming a protective film on the surface of the laminate is executed prior to the grinding process.   In the grinding process, the first concave portion, the first detection conductor portion, and the first connection lead portion are formed, and the second concave portion deeper than the first concave portion is formed on the bottom surface of the second concave portion. And a second connecting lead portion for connecting both end portions of the second detecting conductor portion along the bottom surface of the second recess to the measuring portion. The surface of the first detection conductor portion is located at the same position as the grinding end position using the grinding sensor formed in a region including the side surface of the second recess, and the second detection sensor After setting the grinding processing sensor in the grinding apparatus so that the surface of the conductor portion is at the same position as the rough grinding end position at which rough grinding on the support substrate is to be finished, the second lead portion for connection is used. The second detection conductor is electrically Rough grinding is performed on the support substrate and the grinding sensor while measuring parameters, and when the electrical parameter associated with disappearance of the second detection conductor portion is measured, the support substrate and the The rough grinding for the grinding processing sensor is finished, and then finish grinding for the supporting substrate and the grinding processing sensor is started, and the electrical parameter associated with the disappearance of the first detection conductor portion is The thermoelectric thin film element manufacturing method according to claim 5 or 6, wherein finish grinding on the support substrate and the grinding processing sensor is finished when measured. The thermoelectric thin film element manufacturing according to any one of claims 5 to 7 , wherein the grinding treatment sensor is used in which a non-conductive material is filled in the concave portion in which the connection lead portion and the detection conductor portion are formed. Method.

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