JP5678612B2 - Film forming particle transfer apparatus and generating apparatus, and film forming apparatus - Google Patents

Description

  The present invention relates to an apparatus used for film formation using fine particles, particularly gas deposition film formation.

  Conventionally, particles for film formation by the gas deposition method are generated in the particle generation chamber 1 as illustrated in FIG. 1 and supplied to the film formation chamber 3 through the transfer tube 2. In the particle generation chamber 1, for example, fine particles such as metal nanoparticles are made from the film forming material 6 in the crucible 5 provided with the high frequency heating coil 4 on the outer periphery. In the film formation chamber 3, particles from the particle generation chamber 1 are ejected from the tip nozzle 21 of the transfer tube 2 into the film formation chamber 3 being evacuated and are deposited on the substrate 8 on the stage 7. The stage 7 is appropriately scanned using the XY driving means 9 and the like. In order to transport the particles, He gas is often introduced into the particle generation chamber 1 as a carrier gas. Further, the particles that do not flow into the transport pipe 2 are discharged out of the particle generation chamber 1 together with a part of the carrier gas by evacuation from an extra particle discharge pipe 10 provided coaxially around the transport pipe 2 (for example, (See Patent Document 1 and Non-Patent Document 1).

  By the way, the particles generated in the particle generation chamber 1 have a diameter that is not suitable for film formation, in particular, not suitable for film formation by the gas deposition method, in addition to the nanoparticles necessary for film formation. Growing giant particles may be present. The giant particles are generated, for example, by aggregation of nanoparticles by convection in the particle generation chamber 1.

  Since the structure of the conventional transfer tube 2 is a single tube from the particle generation chamber 1 to the film formation chamber 3, when a huge particle enters the transfer tube 2, the film formation chamber 3 is reached all at once. It becomes a cause of deterioration of the film quality due to being conveyed and adhering to the film surface and clogging of the nozzle 21.

  Further, conventionally, a mechanism (for example, referred to as a shutter mechanism 16) for blocking the flow of generated particles into the transfer tube 2 in order to stop the film formation may be provided in the particle generation chamber 1, and the particle generation shown in FIG. Forms in which particles are difficult to enter the transport pipe 2 by a method in which the transport pipe 2 is moved away from the crucible 5 in the horizontal direction in the chamber 1 or a partition plate 15 is inserted between the crucible 5 and the transport pipe 2 shown in FIG. (See, for example, Patent Document 2).

  Further, in these methods, in order to prevent fine particles from entering the transport pipe 2, the flow rate of the He gas flowing in the transport pipe 2 greatly exceeds the flow rate of the He gas (for example, 30 L / min relative to the transport pipe flow rate of 1 L / min). All the generated fine particles are discharged by evacuating the excess particle discharge pipe 10 formed coaxially with the transport pipe 2 by flowing a gas. When the He gas flow rate is reduced (for example, 5 L / min or less with respect to the flow rate in the transfer pipe of 1 L / min), the ratio of the air flow sucked into the transfer pipe 2 increases, and the fine particles ride on the air flow and enter the transfer pipe 2. This is because the film enters the substrate 8 (see the arrows flowing into the transfer pipe 2 shown in FIGS. 3 and 5).

  Also in the example of the straight type conveyance pipe 2 shown in FIG. 6 and the curved bending type conveyance pipe 2 shown in FIG. 7, when the shutter mechanism 16 is used in the same manner, a large amount of He gas is required.

  However, since the He price is expensive under the condition that a large amount of He gas is used, and the recovery of the fine particles discharged from the excess particle discharge pipe 10 is difficult, the running cost is very high. .

  In addition, in the method shown in FIGS. 2 to 7, since it is necessary to configure a shutter mechanism 16 having an asymmetric shape in the sky above the crucible 5 in the particle generation chamber 1, every time the film formation is started and stopped, the crucible is repeated. 5 The airflow above 5 is turbulent and turbulent flow occurs, making it easy to generate giant particles.

JP 07-166332 A JP2007-23319

Hideaki Hamada, “Gas Deposition System Using Nanoparticles and Their Applications,” Aerosol Research, Vol. 22, No. 1, pp. 26-33, 2007.

  The present invention has been made in view of the above circumstances, and provides a film-forming particle transfer device and generation device, and a film-forming device capable of suppressing or removing the generation of huge particles. Is an issue.

In order to solve the above-mentioned problems, the present invention is an apparatus for transporting particles for film formation from the particle generation chamber to the film formation chamber,
A giant particle trap provided at the first branch point of the transfer pipe extending from the particle generation chamber;
For collecting a film-forming valve for a transfer pipe toward the substrate in the film formation chamber and a transfer pipe toward the extra particle trap in the film formation chamber, which are provided at the second branch point of the transfer pipe branched from the first branch point. With a valve,
The giant particle trap collects giant particles that have flowed from the particle generation chamber beyond the first branch point of the transport pipe,
The film formation valve and the collection valve are opened and closed at the time of film formation, respectively, and the nanoparticles flowing from the first branch point to the second branch point are sent to the substrate. Provided is a particle transport device that sends nanoparticles that have flowed from a first branch point to a second branch point to an extra particle trap.

An apparatus for transporting the film forming particles from the particle generating chamber to the film forming chamber,
A giant particle trap is provided in the first path branched from the branch point of the transfer pipe extending upward from the particle generation chamber, and a film deposition valve for the pipeline toward the substrate in the film formation chamber is provided in the second path. The third passage is provided with a valve for collecting a pipe to the extra particle trap in the film forming chamber,
The giant particle trap collects giant particles that have flowed beyond the bifurcation point,
The deposition valve and the collection valve are opened and closed at the time of film formation, respectively, and the nanoparticles flowing from the branch point are sent to the substrate. When the film formation is stopped, the nanoparticles are closed and opened to flow from the branch point. A particle transport device is provided for sending nanoparticles to an extra particle trap.

  Moreover, the particle production | generation apparatus provided with the said particle conveying apparatus is provided.

  Furthermore, a film forming apparatus such as a gas deposition apparatus provided with the particle conveying apparatus and a film forming apparatus such as a gas deposition apparatus provided with the particle generating apparatus are provided.

The film formation apparatus is an apparatus that performs film formation in the film formation chamber using particles generated in the particle generation chamber,
A giant particle trap provided at the first branch point of the transfer pipe extending from the particle generation chamber;
For collecting a film-forming valve for a transfer pipe toward the substrate in the film formation chamber and a transfer pipe toward the extra particle trap in the film formation chamber, which are provided at the second branch point of the transfer pipe branched from the first branch point. With a valve,
The giant particle trap collects giant particles that have flowed from the particle generation chamber beyond the first branch point of the transport pipe,
The film formation valve and the collection valve are opened and closed at the time of film formation, respectively, and the nanoparticles flowing from the first branch point to the second branch point are sent to the substrate. Then, the nanoparticles flowing from the first branch point to the second branch point are sent to the extra particle trap.

Further, the film formation apparatus is an apparatus that performs film formation in the film formation chamber using the particles generated in the particle generation chamber,
A giant particle trap is provided in the first path branched from the branch point of the transfer pipe extending upward from the particle generation chamber, and a film deposition valve for the pipeline toward the substrate in the film formation chamber is provided in the second path. The third passage is provided with a valve for collecting a pipe to the extra particle trap in the film forming chamber,
The giant particle trap collects giant particles that have flowed beyond the bifurcation point,
The deposition valve and the collection valve are opened and closed at the time of film formation, respectively, and the nanoparticles flowing from the branch point are sent to the substrate. When the film formation is stopped, the nanoparticles are closed and opened to flow from the branch point. Send the nanoparticles to an extra particle trap.

It is a figure which shows a prior art example. It is a figure which shows the prior art example which used the shutter mechanism. It is a figure explaining the gas flow in case the carrier gas flow rate is small in the prior art example of FIG. It is a figure which shows the prior art example which used the shutter mechanism. It is a figure explaining the gas flow in case the carrier gas flow rate is small in the prior art example of FIG. It is a figure which shows the prior art example which connected the particle | grain production | generation chamber and the film-forming chamber with the straight type conveyance pipe. It is a figure which shows the prior art example which connected the particle | grain production | generation chamber and the film-forming chamber with the bending type conveyance pipe. It is a figure which shows one Embodiment of this invention. It is a figure which shows embodiment of this invention which made the circular arc shape the 1st branch point of the conveyance pipe in FIG. It is a figure which shows embodiment of this invention which combined the 1st branch and the 2nd branch. It is a figure explaining He gas flow in an embodiment which removed a shutter mechanism from a particle generation room. It is a figure which shows embodiment which added the water cooling jacket to embodiment of FIG. It is a figure which shows the embodiment which removed the extra particle discharge pipe | tube of FIG. 12, and provided the production | generation chamber exhaust port in the location which is not coaxial with a conveyance pipe | tube. It is a figure which shows embodiment which provided the production | generation chamber exhaust port of FIG. 13 coaxially with the crucible to the outer peripheral part of He introduction port. It is a figure which shows embodiment which provided the rectification | straightening pipe coaxially with the crucible around the crucible of embodiment of FIG. It is a figure which shows embodiment which made the water cooling jacket of embodiment of FIG. 15 a part of production | generation room | chamber interior structure. It is a figure which shows embodiment using a resistance heating system instead of the high frequency induction heating system of the crucible of FIG.

  In one embodiment of the present invention, as illustrated in FIG. 8, first, a first branch point is set in the transfer pipe 2 extending above the particle generation chamber (also referred to as a generation chamber) 1. A branching means such as a T-shaped tube is provided to branch the transport pipe 2 in a straight direction from the particle generation chamber 1 and a bending direction having an angle with respect to the straight direction. Is provided with a giant particle trap 17. The giant particles travel in the vertical direction along the flow from the particle generation chamber 1 and are collected by the trap 17, and the flow of the carrier gas such as He gas and the nanoparticles for film formation from the particle generation chamber 1. The film is bent in a direction having a certain angle with respect to the flow of the gas and sent to the film forming chamber 3. This angle is an angle at which the giant particles having a mass larger than the nanoparticles are separated from the flow from the particle generation chamber 1 while the nanoparticles can flow in the direction of the film formation chamber 3 at the first branch point. In the present embodiment, it is set at a right angle.

  Next, a second branch point is set in the transport pipe 2 extending in the lateral direction from the first branch point with the above angle, and a branching means such as a T-shaped pipe is provided at the second branch point. The tube 2 is branched into a path toward the substrate 8 in the film forming chamber 3 and a path toward the extra particle trap 19 provided in the film forming chamber 3, and switching valves 18A and 18B are provided in the respective paths. By opening and closing these switching valves 18A and 18B, a film formation start and stop control mechanism is realized in place of the conventional shutter mechanism as described later.

  Conventionally, a straight transfer pipe 2 is used for the gas flow path containing the generated particles from the particle generation chamber 1 (see FIG. 6). When changing the gas flow direction, the transfer pipe 2 is gently bent to change the flow path. It is considered essential to change this, and such a design has actually been performed (see FIG. 7). On the other hand, the inventors of the present invention, as shown in the example of FIG. 8, have a gas flow introduced straight from the particle generation chamber 1 into the transfer pipe 2 to have a certain angle with respect to the straight direction. By branching in two directions, for example, at right angles (the above-mentioned first branch point), a giant particle having a mass larger than that of a nanoparticle has a very high straightness, so that it does not ride on the flow of the carrier gas. The gas flow including the nanoparticles is drawn by the vacuum evacuation in the film forming chamber 3 and bent in the flow path in the direction perpendicular to the giant particle trap 17. It was found that only nanoparticles having almost the same particle size exist. In addition, once the gas flow containing only nanoparticles having almost the same particle size is subjected to further two-branch switching (the second branch point), nanoparticle deposition that interferes in the transport pipe 2 It was also confirmed that the flow path could be changed without admission. Based on the findings of the inventors of the present invention, the present invention can simultaneously provide a trapping mechanism for large particles and a film formation stopping mechanism that does not affect the generation of nanoparticles.

  The film formation stop mechanism will be further described. In the present embodiment, the flow of He gas is changed to the substrate in the film formation chamber 3 at the second branch point above the film formation chamber 3 of the transport pipe 2 bent in the perpendicular direction. 8 and a nozzle 21B provided so as to face the extra particle trap 19 in the film forming chamber 3 are branched into two systems, and a film forming valve 18A is provided in each path. And the collecting valve 18B, the film forming valve 18A on the nozzle 21A side facing the substrate 8 is opened, and the collecting valve 18B on the nozzle 21B side facing the extra particle trap 19 is closed. When forming a film by ejecting He gas containing nanoparticles only from the nozzle 21A and conversely opening the collection valve 18B of the nozzle 21B on the extra particle trap 19 side, the formation of the nozzle 21A on the substrate 8 side is performed. For membrane The film formation is completely stopped by closing the valve 18A. As a result, the complete film formation can be stopped without depending on the amount of He gas introduced into the particle generating chamber 1, and the extra particles trapping 19 that have been forced to be exhausted in the past are stopped. Can be reliably collected and reused.

  Further, by switching the two switching valves 18A and 18B so that only one of them is opened at the same time, the flow rate of He gas flowing in the transfer pipe 2 becomes constant, and the pressure in the particle generation chamber 1 and the film formation chamber 3 is The He gas flow in the particle generation chamber 1 is also kept constant. Therefore, the generation of huge particles can be suppressed.

  Note that the switching valves 18A and 18B preferably have an inner diameter equal to or larger than the inner diameter of the transport pipe 2, for example. Thereby, the opening and closing and switching of the flow path can be performed more smoothly.

  The switching valve 18 may be a valve whose path can be switched by a single valve such as a three-way valve at the second branch point of the transport pipe 2.

  Further, the shape, size, etc. of the giant particle trap 17 and the extra particle trap 19 are not particularly limited as long as the particles ejected from the branch transport pipe 2 can be captured.

  In the embodiment shown in FIG. 9, the first branch point of the transport pipe 2 has an arc shape. In this case, the giant particle trap 17 can also be provided in the tangential direction of the arc. As a result, it is possible to realize more effective collection of giant particles together with a smooth change of direction of the flow path.

  In the embodiment shown in FIG. 10, the second branch point is eliminated, and the transfer pipe 2 is branched into three at the first branch point by a branching means such as a cross-shaped branch pipe. The giant particle trap 17 is provided in the first path along the right side, and the switching valves 18A and 18B for the pipes directed to the substrate 8 and the extra particle trap 19 in the film forming chamber 3 are provided in the second and third paths in the right and left direction, respectively. Provided. This configuration enables a more compact and simple gas channel branch switching structure.

  According to each of the above-described embodiments, the structure for disturbing the airflow over the crucible 5 is eliminated by installing the film formation stop mechanism outside the particle generation chamber 1, so that the He gas generated in the particle generation chamber 1 is eliminated. The flow becomes uniform, the generation of huge particles can be suppressed, and the introduction of particles into the transport pipe 2 can be realized with high efficiency.

  Further, even when the extra particle discharge pipe 10 provided concentrically with the transport pipe 2 shown in FIG. 7 is similarly provided in the embodiment of FIGS. Since there is no structure that disturbs the airflow in the vicinity of the inlet 2 and the extra particle discharge pipe 10, a uniform He gas flow can be created as shown in FIG.

  By the way, as illustrated in FIGS. 8 to 10 and FIG. 12, the particle generation chamber 1 is provided with the extra particle discharge pipe 10 so as to cover at least the upper space of the crucible 5 where the carrier gas convects. In such a case, the extra particle collecting means 12 may be provided so as to cover at least the lower peripheral space of the extra particle discharge pipe 10 including the upper space of the crucible 5. As this extra particle collecting means 12, for example, the bowl-shaped water-cooled jacket 12 shown in the figure can be used, the convection is promoted, the efficiency of guiding the nanoparticles over the crucible 5 to the transfer tube 2 is improved, and the film forming speed is increased. Will improve. Also, the giant particles grown during the convection are collected in the water cooling jacket 12, and the giant particles not caught in the water cooling jacket 12 are collected in the giant particle trap 17 shown in FIGS. The inflow of giant particles into the film forming chamber 3 can be prevented more effectively.

  The extra particle collecting means 12 will be further described. Cooling water is supplied to a water cooling pipe 121 arranged so as to be wound around a bowl-shaped curved board constituting the water-cooling jacket 12 to cool the bowl-shaped curved board. The inner surface of the cooled bowl is brought into contact with and adsorbed giant particles convection in the particle generation chamber 1 so that the giant particles can be actively collected so as not to flow into the particle transport pipe 2. it can.

  Further, the extra particle collecting means 12 generates particles gently along the inner surface of the water-cooling jacket 12 for the carrier gas that flows above the crucible 5 by the rectifying means 14 described later, and that does not flow into the particle conveying pipe 2. By changing the flow direction downward of the chamber 1, the airflow can be adjusted, the generation of turbulent flow around the crucible 5 can be suppressed, and the generation of giant particles can be suppressed.

  The extra particle collecting means 12 in FIG. 12 has an arcuate cross-sectional shape as viewed from the viewpoint of FIG. 12 on the wall surface, but may be a polygonal shape, for example. In this case as well, the convection is the same as in the form of FIG. Particle adsorption and carrier gas rectification can be effectively realized.

  Here, when the amount of He introduced into the particle generation chamber 1 is brought close to the flow rate of He flowing through the transport pipe 2, the amount of He gas exhausted from the extra particle discharge pipe 10 shown in FIGS. 11 and 12 is minimized. Therefore, as shown in FIG. 13, the He gas flow in the particle generation chamber 1 is not affected even without the extra particle discharge pipe 10 coaxial with the transport pipe 2. In the embodiment of FIG. 13, the generation chamber exhaust port is provided at a position that is not coaxial with the transfer pipe 2 to evacuate the particle generation chamber 1 to keep the pressure in the generation chamber constant.

  Further, for example, as shown in FIGS. 8 to 10 and FIG. 14, the generation chamber exhaust port 13 is provided on the outer coaxial side of the He introduction port 11 provided coaxially with the crucible 5, so that it is directed downward by the water cooling jacket 12. Moreover, the He gas that has not entered the transport pipe 2 can be efficiently discharged, and the He gas flowing around the crucible 5 is always a clean gas just introduced, and the effect of avoiding suction of huge particles and contaminants into the transport pipe 2 And the quality of the deposited film is improved.

  Further, for example, as shown in FIGS. 8 to 10 and FIG. 15, by providing a rectifying means 14 for adjusting the airflow around the crucible 5 between the He introduction port 11 and the generation chamber exhaust port 13, The efficiency of guiding a clean He gas stream can be further improved.

  The rectifying means 14 will be further described. The illustrated rectifying means 14 is a rectifying pipe 14 that surrounds the crucible 5 from the He inlet 11 and extends upward from the crucible 5, and allows the He gas supplied into the particle generation chamber 1 to be supplied. It leads to the transport pipe 2 above the crucible 5. The rectifying tube 14 includes a rising portion 141 that extends straight from the bottom of the particle generation chamber 1 around the plurality of He inlets 11, an inclined portion 142 that extends from the rising portion toward the crucible 5, and an inclined portion 142 has a cylindrical vertical portion 143 extending between crucible 5 and crucible 5 through crucible 5 and high-frequency heating coil 4 (see FIG. 15).

  The rising portion 141 and the inclined portion 142 restrict the He gas inflow space from the He inlet 11 in the particle generation chamber 1 to a space below the crucible 5 and guide the He gas flowing into this space toward the crucible 5. The vertical portion 143 passes the He gas guided to the lower portion of the crucible 5 by the inclined portion 142 through the gap formed between the vertical portion 123 and the crucible 5 to the upper portion of the crucible 5. As a result, the He gas supplied from the He inlet 11 into the particle generation chamber 1 and flowing out from the upper opening of the rectifying tube 14 is constrained to flow locally above the crucible 5, thereby suppressing diffusion. As a result, the He gas density in the vicinity of the inlet of the transfer pipe 2 increases.

  Further, the gas flow rate to be supplied and the gas flow rate discharged by the transport pipe 2 and the extra particle discharge pipe 10 can be made substantially the same, and the flow of He gas between the crucible 5 and the transport pipe 2 is rectified. Further, the deposition rate can be increased by further preventing the diffusion of the nanoparticles. Further, even if the He gas supply flow rate is reduced, the rectification effect can be obtained, so that the gas consumption can be reduced.

  Of course, the rectifying tube 14 is not limited to the embodiment shown in FIG. 15. For example, the rectifying tube 14 does not have the rising portion 141 shown in FIG. 15, and the inclined portion 142 is directed directly from the bottom of the particle generation chamber 1 toward the crucible 5. Instead of the extended rectifier tube (not shown) having the two-stage configuration of the inclined portion 142 and the vertical portion 143, and the inclined portion 142 of FIG. 15, the portion connecting the rising portion 141 and the vertical portion 143 is horizontal. Or a form (not shown) in which a portion from the bottom of the particle generation chamber 1 toward the vertical part 143 is a curved part instead of the rising part 141 and the inclined part 142. A form in which the joint between the curved surface portion and the vertical portion 143 is formed with a smooth curved surface (not shown), a more simplified shape having a constant slope from the bottom surface to the top surface, or From bottom to top Such shape to the openings extending vertically as possible to realize the same effect can be considered various forms.

  Each of the above embodiments has been described centering on He gas, but it goes without saying that a carrier gas other than He gas may be used.

  As a further embodiment of the present invention, as shown in FIG. 16, the water cooling jacket 12 may be integrated with the particle generation chamber 1 instead of being a component independent of the particle generation chamber 1, for example, in the embodiment of FIG. 16. It is a part of the interior wall structure.

  In the embodiment shown in FIG. 17, the heating method of the crucible 5 is not limited to high-frequency induction heating, and an electric heating heater method in which the electric heating heater 20 and the electric heating heater electrode 22 are provided so as to surround the crucible 5. The coaxial cylindrical structure is used. According to this, the air flow control efficiency in the particle generation chamber 1 can be further improved. Since the conventional high frequency induction heating coil is eliminated, the carrier gas can be smoothly discharged out of the particle generation chamber 1 without disturbing the airflow outside the rectifying tube 14.

  The present invention described in detail above can be applied to various film forming techniques such as an aerosol deposition method in addition to the film formation by the gas deposition method. The effect of can be realized.

DESCRIPTION OF SYMBOLS 1 Particle generation chamber 2 Conveyance pipe | tube 21,21A, 21B Nozzle 3 Film-forming chamber 4 High frequency heating coil 5 Crucible 6 Film-forming material 7 Stage 8 Substrate 9 XY stage drive means 10 Extra particle discharge pipe 11 He inlet 12 Water-cooling jacket 121 Water-cooling Pipe 13 Generation chamber exhaust port 14 Rectifier pipe 141 Rising part 142 Inclining part 143 Vertical part 15 Partition plate 16 Shutter mechanism 17 Giant particle trap 18, 18A, 18B Switching valve 19 Extra particle trap 20 Electric heating heater 22 Electric heating heater electrode

Claims (25)

A particle generating apparatus comprising a particle transport device for transporting particles for film formation from the particle generating chamber to the film forming chamber,
The particle transport device
A giant particle trap provided in the first branch point elongation Ru conveying pipe from the particle generation chamber,
Wherein provided in the second branch point of the transport pipe that branches from the first branch point, capturing the conveying pipe towards the film valve and extra particles trapped in the deposition chamber of the carrier tube toward the deposition chamber of the substrate includes a collection for the valve, the,
The particle generator is
Extra particle collecting means for adsorbing and collecting particles that convect in the particle generation chamber;
A generation chamber exhaust port provided at a position that is not coaxial with the carrier pipe extending from the particle generation chamber and on the outer coaxial side of the carrier gas introduction port,
The macroparticles trap, collecting the macroparticles has flowed beyond the first branching point from the particle generation chamber,
The film forming valve and the collection valve sends nanoparticles has flowed into the second branch point, respectively at the time of film formation is opened and closed from the first branch point on the substrate, at the time of stopping the film formation each Send nanoparticles flowing from being closed and opened the first branch point to the second branching point in the extra particle trap,
Particle generator .   A particle generating apparatus comprising a particle transport device for transporting particles for film formation from the particle generating chamber to the film forming chamber,
  The particle transport device
    A giant particle trap provided at a first branch point of a transfer pipe extending from the particle generation chamber;
    A film forming valve for a transfer tube directed to a substrate in the film formation chamber and a trap for the transfer tube directed to an extra particle trap in the film formation chamber provided at a second branch point of the transfer tube branched from the first branch point. And a collecting valve,
  The particle generator is
    Extra particle collecting means for adsorbing and collecting particles that convect in the particle generation chamber;
    Rectifying means for creating a flow of particle carrier gas to a transfer pipe located above the crucible in the particle generation chamber,
  The giant particle trap collects giant particles flowing from the particle generation chamber beyond the first branch point;
  The film formation valve and the collection valve are opened and closed at the time of film formation, respectively, and the nanoparticles flowing from the first branch point to the second branch point are sent to the substrate. Sending the nanoparticles, which are closed and open, respectively, from the first branch point to the second branch point, to the extra particle trap;
Particle generator. Wherein the first branch point branches the conveying pipe which extends from the particle generation chamber bend direction with straight direction and straight advance direction and angle from the particle generation chamber, the giant particle trap is provided in the straight direction path, bending the direction path second branch point is provided, the particle generator according to claim 1 or 2. The particle generation apparatus according to claim 3 , wherein an angle with the straight traveling direction from the particle generation chamber is substantially a right angle. Wherein the first branch point is an arc shape, the macroparticle trap tangential arc is provided, particle generator according to claim 1 or 2. The film forming valve and the collection valve is constituted by a single switching valve, the particle generator according to any one of claims 1 to 5. Wherein said second branch point to the first branch point are combined, particle generator according to claim 1 to 6, wherein. A particle generating apparatus comprising a particle transport device for transporting particles for film formation from the particle generating chamber to the film forming chamber,
In the particle transport device,
Giant particle trap is provided in the first path which is branched at the branch point of the conveying pipe Ru extending thereabove from the particle generation chamber, the film forming the valve of the conduit toward the deposition chamber of the substrate to the second path is provided, the film forming collecting valve in line towards the extra particles trapped in the room is provided in the third path,
The macroparticles trap, collecting the macroparticles has flowed beyond the branch point,
Wherein said film-forming valve and the collection valve, respectively at the time of deposition is opened and closed feed nanoparticles flowing from the branch point on the substrate, are respectively at the time of film formation and stopping closed and open Ri feed nanoparticles flowing from the branch point to the extra particle trap,
In the particle generator,
Extra particle collecting means for adsorbing and repairing convective particles in the particle generation chamber is provided, and the generation chamber exhaust is located on the outer axis of the carrier gas inlet at a position that is not coaxial with the carrier pipe extending from the particle generation chamber. Mouth is provided,
Particle generator .   A particle generating apparatus comprising a particle transport device for transporting particles for film formation from the particle generating chamber to the film forming chamber,
  In the particle transport device,
  A giant particle trap is provided in a first path branched from a branch point of a transfer pipe extending upward from the particle generation chamber, and a film formation valve for a pipe line directed to a substrate in the film formation chamber is provided in the second path. Provided, a third path is provided with a valve for collecting a pipe line toward the extra particle trap in the film forming chamber,
  The giant particle trap collects giant particles flowing over the branch point,
  The deposition valve and the collection valve are opened and closed at the time of film formation, respectively, and the nanoparticles flowing from the branch point are sent to the substrate. Send the nanoparticles flowing from the branch point to the extra particle trap,
  In the particle generator,
  Extra particle collecting means for adsorbing and repairing convective particles in the particle generation chamber is provided, and rectifying means for creating a flow of the particle carrier gas to the transfer pipe located above the crucible in the particle generation chamber is provided. ing,
Particle generator. The excess particle collection means is a water cooling jacket, the particle generator according to any one of claims 1 to 9. The extra particle collection means are integral with the particle generation chamber, the particle generator according to any one of claims 1 to 10. The rectifying means, surrounds the crucible from the carrier gas inlet, a rectifying tube extending into the crucible upwardly particle generator according to claim 2 or 9. An apparatus for forming a film in a film forming chamber using particles generated in the particle generating chamber,
A giant particle trap provided in the first branch point elongation Ru conveying pipe from the particle generation chamber,
Collection of the first provided to the second branch point of the transport pipe that branches from a branch point, the transport tube towards the film valve and the deposition chamber of the extra particles trapped in the transport pipe towards the deposition chamber of the substrate Valves for ,
A generation chamber exhaust port provided on the outer axis of the carrier gas introduction port at a position that is not coaxial with the carrier pipe extending from the particle generation chamber;
With
The macroparticles trap, collecting the macroparticles has flowed beyond the first branching point from the particle generation chamber,
The film forming valve and the collection valve sends nanoparticles has flowed into the second branch point, respectively at the time of film formation is opened and closed from the first branch point on the substrate, at the time of stopping the film formation each Send nanoparticles flowing from being closed and opened the first branch point to the second branching point in the extra particle trap film forming apparatus.   An apparatus for forming a film in a film forming chamber using particles generated in the particle generating chamber,
  A giant particle trap provided at a first branch point of a transfer pipe extending from the particle generation chamber;
  A film forming valve for a transfer tube directed to a substrate in the film formation chamber and a trap for the transfer tube directed to an extra particle trap in the film formation chamber provided at a second branch point of the transfer tube branched from the first branch point. A collecting valve;
  Rectifying means for creating a flow of particle carrier gas to a transfer pipe located above the crucible in the particle generation chamber;
With
  The giant particle trap collects giant particles flowing from the particle generation chamber beyond the first branch point;
  The film formation valve and the collection valve are opened and closed at the time of film formation, respectively, and the nanoparticles flowing from the first branch point to the second branch point are sent to the substrate. A film forming apparatus for sending nanoparticles, which are closed and open, and flow from the first branch point to the second branch point, to the extra particle trap. Wherein the first branch point branches the conveying pipe which extends from the particle generation chamber bend direction with straight direction and straight advance direction and angle from the particle generation chamber, the giant particle trap is provided in the straight direction path, bending The film-forming apparatus of Claim 13 or 14 with which the said 2nd branch point is provided in the direction path | route. The film forming apparatus according to claim 15 , wherein an angle with the straight traveling direction from the particle generation chamber is substantially a right angle. Wherein the first branch point is an arc shape, the macroparticle trap tangential arc is provided, the film formation apparatus according to claim 13 or 14. The film forming valve and the collection valve is constituted by a single switching valve, the deposition apparatus according to any one of claims 13 to 17. Wherein said second branch point to the first branch point are combined, the film deposition apparatus of claims 13 to 18 wherein. An apparatus for forming a film in a film forming chamber using particles generated in the particle generating chamber,
Giant particle trap is provided in the first path which is branched at the branch point of the conveying pipe Ru extending thereabove from the particle generation chamber, the film forming the valve of the conduit toward the deposition chamber of the substrate to the second path is provided, the film forming collecting valve in line towards the extra particles trapped in the room is provided in the third path,
The macroparticles trap, collecting the macroparticles has flowed beyond the branch point,
Wherein said film-forming valve and the collection valve, respectively at the time of deposition is opened and closed feed nanoparticles flowing from the branch point on the substrate, are respectively at the time of film formation and stopping closed and open Ri feed nanoparticles flowing from the branch point to the extra particle trap,
Further, a generation chamber exhaust port is provided on the outer coaxial side of the carrier gas introduction port at a position that is not coaxial with the carrier pipe extending from the particle generation chamber,
Deposition device.   An apparatus for forming a film in a film forming chamber using particles generated in the particle generating chamber,
  A giant particle trap is provided in the first path that branches at the branch point of the transfer pipe extending upward from the particle generation chamber, and a film formation valve for a pipe line that is directed to the substrate in the film formation chamber is provided in the second path. And a third passage is provided with a valve for collecting a conduit toward the extra particle trap in the film forming chamber,
  The giant particle trap collects giant particles flowing over the branch point,
  The film formation valve and the collection valve are opened and closed during film formation, respectively, and the nanoparticles flowing from the branch point are sent to the substrate. Send the nanoparticles flowing from the branch point to the extra particle trap,
  Further, a rectifying means for creating a flow of the particle carrier gas to the transport pipe located above the crucible in the particle generation chamber is provided,
Deposition device. Comprising an extra particle collection means for collecting and adsorbing particles convection to the particle generation chamber, the film formation apparatus according to any one of claims 13 to 21. The film forming apparatus according to claim 22, wherein the extra particle collecting means is a water cooling jacket. The excess particle collection means is integral with the particle generation chamber, the film formation apparatus according to claim 22 or 23. The rectifying means, surrounds the crucible from the carrier gas inlet, a rectifying tube extending into the crucible upward film forming apparatus according to claim 14 or 21.