JP5655759B2 - Energy beam irradiation device and workpiece transfer mechanism - Google Patents

Description

  The present invention relates to an energy beam irradiation system that irradiates an energy beam such as an ion implantation device or an electron beam irradiation device, and a work transfer mechanism used therefor.

  In the single-type ion implantation apparatus shown in Patent Document 1, two wafer drive mechanisms for individually circulating wafers are provided, the two circular trajectories are made to coincide in the ion beam irradiation region, and the peripheral speed or phase of each wafer is matched. By controlling this, one of the two wafers always passes through the ion beam irradiation region. As a result, the irradiation efficiency of the ion beam on the wafer can be increased.

  By the way, in this patent document 1, the circular orbit of each wafer is coincident with the straight orbit portion including the beam irradiation region, and the other portions are separated and separated on both sides of the linear orbit portion.

Japanese Patent Laid-Open No. 10-134761

  However, such a configuration requires a space for securing two orbits, and there is a problem that the apparatus cannot be made compact beyond a certain level. Such a problem is common not only to an ion implantation apparatus but also to an energy beam irradiation system for irradiating a workpiece with an energy beam.

  The present invention has been made in view of such a problem. In this type of energy beam irradiation system, the energy beam can be efficiently irradiated onto the workpiece, while at the same time achieving a drastic compactness. It is a thing.

That is, the energy beam irradiation system according to the present invention includes an energy beam injection mechanism that emits an energy beam toward a predetermined irradiation region, and a first workpiece that is an object irradiated with the energy beam, the irradiation region. A first turning mechanism for turning along a predetermined first orbit, and a second work that is an object to be irradiated with the energy beam is made to circulate along a predetermined second orbit including the irradiation region. A virtual circuit formed by each circular track is parallel to each other, and the first circular track and the second circular track are on the same plane, and the circular circuit is on the plane. When viewed from a direction perpendicular to the surface, at least a portion of the region surrounded by the first orbit and the region surrounded by the second orbit are configured to overlap. Is shall.
Here, “overlap” does not include touching.

  As a specific embodiment, the respective circular orbits are respectively formed from mutually parallel linear orbits and semicircular orbits connecting the end portions thereof, and the centers of the semicircular orbits in the respective orbits are The thing comprised so that it may match | view by seeing from the said linear track direction can be mentioned.

If it is such, since both circular orbits can be made to correspond, it can contribute by compactization. Further, even if both the circular orbits do not match, the turning radius of the semicircular orbits in both the circular orbits can be made closer, which can contribute to downsizing.
The most preferable aspect for downsizing is that the respective orbits are configured to coincide with each other.

  In order to increase the energy beam irradiation efficiency using two orbits, the second workpiece enters the irradiation region before the first workpiece that has entered the irradiation region completely leaves the irradiation region. What is comprised is preferable.

  In that case, if a plurality of the first workpieces or the second workpieces can be arranged along the circumferential movement direction, the time for irradiating the energy beam to one of the first or second workpieces becomes longer. Since the time for moving the other work around and moving it to the rear position can be afforded, the continuous energy ray irradiation process is facilitated.

  If the workpiece is configured to return to the initial rotation angle when viewed once from the direction perpendicular to the circumferential surface when the workpiece makes one round along the circular path, the wiring may be twisted or twisted. It is possible to prevent disconnection.

  In addition to the above effect, when passing through the back side of the irradiation area of the energy beam, in order to make it less susceptible to the influence of the energy beam, when viewed from a direction perpendicular to the circumferential surface, While rotating toward the back side region, it rotates 180 degrees, and in the back side region, the back surface of the energy beam irradiation surface is directed in the energy beam irradiation direction, and from the back side region toward the irradiation region, it rotates at -180 degrees and the first rotation. What is configured to return to an angle is desirable.

  According to the present invention configured as described above, while providing two orbiting mechanisms to improve the energy beam irradiation efficiency, the area of the first orbit and the area of the second orbit by the two orbiting mechanisms can be reduced. Since it overlaps at least partially, the area for two orbits is no longer necessary, and the area can be reduced by the overlapped area, so that a compact configuration can be realized.

1 is a schematic perspective view showing an energy beam irradiation system in one embodiment of the present invention. The front view which shows the rotation mechanism of the embodiment. The top view which shows the circumference track | orbit of the embodiment. The typical operation explanatory view showing the motion of the wafer of the embodiment. The typical operation explanatory view showing the motion of the wafer of the embodiment. The top view which shows the motion of the wafer in other embodiment of this invention. Explanatory drawing which shows the rotation mechanism seen from the front direction in the further another embodiment of this invention, and the circulation track | orbit seen from the plane direction. Explanatory drawing which shows the rotation mechanism seen from the front direction in the further another embodiment of this invention, and the circulation track | orbit seen from the plane direction.

  Hereinafter, an energy beam irradiation system according to the present invention will be described with reference to the drawings.

  As shown in FIG. 1, this energy beam irradiation system 100 irradiates a wafer W, which is a workpiece, with an ion beam IB, which is an energy beam, and implants ions. In an ion implantation chamber provided in a vacuum chamber (not shown). An ion beam ejection mechanism (not shown) that ejects the ion beam IB and a wafer transport mechanism 10 that transports the wafer W to a position where the ion beam IB can be irradiated are provided.

  The ion beam ejection mechanism is a known one that ejects, for example, a ribbon-shaped ion beam IB toward an irradiation region P (shown in FIG. 4 and the like) set in the ion implantation chamber, and thus detailed description thereof is omitted. .

  The wafer transfer mechanism 10 includes an internal / external movement mechanism (not shown) for moving the wafer between a vacuum preparatory chamber (not shown) provided adjacent to the ion implantation chamber and a standby position provided in the ion implantation chamber, and an ion beam IB. Circulates the wafers W1 (W2) so as to cross the irradiation region P in the middle, and the wafer W1 (W2) is transferred between the inside / outside moving mechanism and the circulators 1 and 2 It has a mechanism.

  Since the inside / outside movement mechanism and the delivery mechanism are known as described in, for example, Japanese Patent No. 4766156, the illustration and description are omitted here, and the orbiting mechanism which is a characteristic configuration of the energy beam irradiation system 100 1 and 2 will be described in detail below.

  In this embodiment, two circulator mechanisms are provided. Each of the revolving mechanisms 1 and 2 includes the support pillars 11 and 21, arms 12 and 22 projecting in a radial direction from the support pillars 11 and 21, and turning means 13 for turning the arms 12 and 22 around the axis of the support pillars 11 and 21. 23, plate-like wafer support members 14 and 24 attached to the distal ends of the arms 12 and 22 and extending in parallel with the axes of the columns 11 and 21, and the columns 11 and 21 are connected to the arms 12 and 22 and the wafer support member. 14 and 24, and linearly moving means 15 and 25 for linearly moving in a direction perpendicular to the axis thereof, respectively.

First, the first turning mechanism 1 will be described in detail with reference to FIGS.
The support column 11 in the first circulation mechanism 1 is a columnar one that stands up from the base 16.
The arm 12 has a plate-like shape that protrudes in the radial direction from the distal end portion 11 b of the support column 11.

  The turning means 13 is, for example, a motor, and a drive shaft (not shown) is connected to the base end portion 11 a of the column 11. The arm 12 can be turned by rotating the support column 11 about its axis. A structure in which the arm 12 is directly turned without turning the support 11 may be used.

  A wafer support member (hereinafter also referred to as a platen) 14 has, for example, a substantially long plate shape that supports, for example, electrostatic adsorption on and supports a plurality of wafers W1 on its surface. The arm plate 12 is suspended from the tip of the arm 12 so that it is parallel and the face plate portion is perpendicular to the extending direction of the arm 12. In this embodiment, as shown in FIG. 1 and the like, the platen 14 is pivotally supported by the arm 12 so that the platen 14 is suspended from the arm 12 and parallel to the arm 12. It can be rotated with. This is because the wafer is transferred to and from the transfer mechanism. Specifically, when the wafer W1 is transferred to and from the transfer mechanism, the platen 14 is set in a parallel state, and the platen 14 is suspended when it is rotated. State.

  Here, the rectilinear means 15 includes, for example, a screw hole 151 that passes through the base 16 that supports the base end portion 11a of the column 11 in a direction perpendicular to the axis of the column 11, and a screw member that is screwed into the screw hole 151. 152 and an actuator 153 such as a motor for rotating the screw member 152. By rotating the screw member 152 forward and backward, the base 16 linearly advances and retreats along the extending direction of the screw member 152. This is a screw feed method. Note that various types of mechanisms such as a belt method as well as the above-described screw feeding method can be used as the linearly moving means 15.

Further, the first circulation mechanism 1 controls the turning means 13 and the rectilinear means 15, and more specifically, a control unit comprising an electric circuit for controlling the motors 13 and 153 provided in the means 13 and 15 ( (Not shown). As shown in FIG. 3, this control unit moves around the wafer W <b> 1 by repeating the four operations of moving straight in one direction, turning 180 degrees, moving in the opposite direction, and turning −180 degrees as viewed from the axial direction. Let
In other words, the orbit (first orbit) O1 by the first orbiting mechanism 1 is a straight orbit L11 and L12 having parallel and equal lengths and a semicircular orbit C11 connecting between the ends of the straight orbits L11 and L12. , C12.

  More specifically, when the wafer W1 is moved straight, this control unit operates the straight movement means 15 and controls the turning means 13 so that the surface of the wafer faces the outside of the circular orbit O1. The angle of is fixed perpendicularly to the straight direction. The ion beam IB is irradiated perpendicularly to the surface of the wafer W1 in the course of one straight movement. That is, an irradiation region P of the ion beam IB that travels perpendicularly to the surface of the wafer W1 is provided in the middle of the one linear trajectory L11.

  On the other hand, when the wafer W1 is swung, the controller stops the straight advance means 15 and operates the swivel means 13 to turn the arm 12 180 degrees in the forward or reverse direction. Thus, the reason why the turning angle during the turning operation is set to +180 degrees on the one hand and to -180 degrees on the other hand is that when the wafer W1 is rotated one time, the wafer W1 does not rotate along with the rotation. It is to make it. That is, with the above-described configuration, the rotation angles of the wafer support member 14, the arm 12, and the support column 11 that support the wafer W1 are restored when the wafer W1 makes one turn, and the wafer W1 is turned many times. However, it is possible to prevent a problem that the electric cable or the like connected to the wafer support member 14, the arm 12, and the column 11 is twisted and disconnected due to rotation.

Next, the second turning mechanism 2 will be described in detail with reference to FIGS.
The support column 21 in the second circulation mechanism 2 is suspended by a suspension structure 27, and its front end surface is opposed to the front end surface of the support column 11 of the first rotation mechanism 1 as viewed from the straight traveling direction. As shown, the axes are aligned. The suspension structure 27 has a substantially L shape including a base 26, a standing member 271 standing from the base 26, and a suspension body 272 extending perpendicularly from the tip of the standing member 271. The support column 21 is suspended from the distal end of the body 272 with a turning means 23 described later.
The arm 22 has a plate-like shape protruding in the radial direction from the tip end portion of the support column 21.

  The turning means 23 is, for example, a motor, and a drive shaft thereof is connected to the base end portion 21 a of the column 22. As in the first turning mechanism 1, the support 22 can be rotated around its axis so that the arm 22 and thus the wafer support member 24 can be turned. In this embodiment, the turning radius of the wafer support member 24 is set to be the same as that of the first rotation mechanism 1.

  The platen 24 has, for example, a substantially long plate shape for supporting a plurality of wafers W2 on the surface thereof by, for example, electrostatic attraction, as in the first rotating mechanism 1, and the longitudinal direction thereof is parallel to the axis of the support column 21. In addition, the face plate portion is suspended from the tip of the arm 22 so as to be perpendicular to the extending direction of the arm 22. The wafer support area 24a in the platen 24 is set to have the same height as the wafer support area 14a in the platen 14 of the first circulation mechanism 1.

  The rectilinear means 25 includes a screw hole 251 that penetrates the base 26 that supports the column 21 via the suspension structure 27, a screw member 252 that is screwed into the screw hole 251, a motor that rotates the screw member 252, and the like. In the same manner as the first turning mechanism 1, the base 26 is configured to advance and retract along the extending direction of the screw member 252 by rotating the screw member 252 forward and backward. The extending direction of the screw member 252 is set in parallel to the extending direction of the screw member 152 of the first circulator 1.

Further, like the first turning mechanism 1, the second turning mechanism 2 has a control unit including an electric circuit for controlling the turning means 23 and the rectilinear means 25. Here, the control unit circulates the wafers W1 and W2 in the same direction on the same track as the first circulator 1. That is, the orbit (first orbit) O2 by the second orbiting mechanism 2 is a straight orbit L21 and L22 that are parallel to each other and have the same length, and a semicircular orbit C21 that connects between the ends of the straight orbits L21 and L22. , C22.
Note that this control unit may be physically shared with the first circulation mechanism 1 or may be separate.

Next, operation | movement of the energy beam irradiation system 100 comprised in this way is demonstrated.
For example, as shown in FIG. 4 (A), the second circulator mechanism 2 is before the wafer circulated by the first circulator 1 (hereinafter also referred to as the first wafer) W1 passes through the irradiation region P. The description starts from the point when wafer W2 (hereinafter also referred to as a second wafer) W2 starts to enter the irradiation region P.

  In the state of FIG. 4A, each of the wafers W1 and W2 moves at a predetermined ion implantation speed. Thereafter, as shown in FIGS. 4B and 4C, the first wafer W1 previously separated from the irradiation region P goes around while increasing the moving speed, while the second wafer W2 in the irradiation region P. Continues to move at the ion implantation speed.

  Then, as shown in FIG. 5D, the first wafer W1 catches up before the second wafer W2 finishes passing through the irradiation region P, enters the irradiation region P, and the speed thereof is used for the ion implantation. Return to speed. Thereafter, as shown in FIGS. 5E and 5F, the second wafer W2 away from the irradiation region P goes around with an increased moving speed, while the first wafer W1 in the irradiation region P is The movement is continued at the ion implantation speed.

Then, the second wafer W2 catches up with the first wafer W1 and returns to the state of FIG.
In this way, a predetermined amount of ions is implanted into each of the wafers W1 and W2 by orbiting a predetermined number of times.

  If this is the case, the wafers W1 and W2 are allowed to enter the irradiation region P of the ion beam IB without interruption using the two orbiting mechanisms 1 and 2, so that the implantation efficiency can be increased. Effects can be obtained.

  Moreover, although the two orbiting mechanisms 1 and 2 are provided, the orbits of the first orbit O1 and the second orbit O2 coincide with each other. It can be configured with an area equivalent to one orbit and can be remarkably compact.

The present invention is not limited to the above embodiment.
For example, the number of wafers arranged on the platen may be one. However, if there are a plurality of sheets, the throughput is improved.

  As the number of wafers mounted on one platen increases, the time required to process the wafers mounted on each platen increases. As a result, a sufficient time is allowed to move one platen to a position behind the other platen, so that the continuous injection process is facilitated. In this case, depending on the configuration of the platen, the longitudinal direction of the platen may be perpendicular to the axis of the column.

  Since the number of transported platens may be two or more, it may be configured to transport a plurality of platens. Thereby, improvement of throughput and facilitation of continuous injection processing can be promoted.

  The number of ion beams is not limited to one. For example, as shown in FIG. 6, a configuration in which two or more ion beams IB are irradiated may be used. When two ion beams IB are irradiated, considering the effective use of the ion beam IB, the number of platens is preferably 3 or more. Here, FIG. 6 shows three platens 14, 24, 34 and three wafers W1, W2, W3 mounted thereon.

  Further, it is only necessary that at least a part of the region surrounded by the first orbiting track O1 and the region surrounded by the second orbiting track O2 overlap with each other. There is no. For example, as shown in FIG. 7, the turning axis when viewed from the straight traveling direction may be different for each revolving mechanism. Moreover, as shown in FIG. 8, the position of the turning axis is the same, but the turning radii may be different from each other. In any case, a part of the region surrounded by the first orbital track O1 and the region surrounded by the second orbital track O2 overlap each other, and the size reduction can be achieved by the overlap.

  The present invention can be applied not only to an ion beam but also to a system that irradiates a workpiece with an energy beam such as an electron beam, a light beam, or a proton beam, such as an electron beam irradiation device, a sputtering device, or a plasma doping device. Can have an effect.

  As a configuration for improving the energy beam irradiation efficiency, it is most desirable that at least one wafer is positioned in the irradiation region, but the configuration is not limited to such a configuration. For example, depending on the size of the energy beam and the configuration of the platen, there are cases where at least one wafer cannot be positioned in the irradiation region. In such a case, it is only necessary that each energy beam be continuously traversed by each wafer.

Any beam shape may be used. For example, the beam may have a square cross section or a spot shape. The wafer shape may be not only circular but also rectangular, for example. The wafer may be transferred manually to the platen.
In addition, the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.

DESCRIPTION OF SYMBOLS 100 ... Energy beam irradiation system P ... Irradiation area W1 ... 1st workpiece | work O1 ... 1st circumference track 1 ... 1st circumference mechanism W2 ... 2nd workpiece O2 ... 2nd Orbit 2: Second orbiting mechanism L11, L12, L21, L22 ... Linear orbit C11, C12, C21, C22 ... Semicircular orbit 10 ... Work transfer mechanism

Claims (8)

An energy ray emission mechanism that emits energy rays toward a predetermined irradiation region;
A first circulation mechanism that circulates a first workpiece, which is an object irradiated with the energy rays, along a predetermined first orbit including the irradiation area;
A second turning mechanism for turning a second workpiece, which is an object irradiated with the energy rays, along a predetermined second turning track including the irradiation region;
The first orbit and the second orbit are on the same plane, and when viewed from a direction perpendicular to the orbiting plane on the plane, the region surrounded by the first orbit and the second orbit It is comprised so that at least one part may overlap with the area | region enclosed by energy beam irradiation system characterized by the above-mentioned.   The circular orbits are respectively formed from mutually parallel linear orbits and semicircular orbits connecting the ends thereof, and the centers of the semicircular orbits in the respective orbits coincide with each other when viewed from the linear orbital direction. The energy beam irradiation system according to claim 1, which is configured as described above.   The energy beam irradiation system according to claim 1, wherein the respective orbits are configured to coincide with each other.   The energy beam irradiation system according to any one of claims 1 to 3, wherein the second workpiece enters the irradiation region before the first workpiece that has entered the irradiation region completely leaves the irradiation region.   The energy beam irradiation system according to any one of claims 1 to 4, wherein a plurality of the first workpieces or the second workpieces can be arranged along a circumferential movement direction.   The energy according to any one of claims 1 to 5, wherein when the workpiece makes one round along a circular path, the workpiece returns to an initial rotation angle when viewed from a direction perpendicular to the circular surface. X-ray irradiation system.   As viewed from the direction perpendicular to the circumferential surface, the work rotates 180 degrees while going from the irradiation region to the backside region, and the back surface of the energy ray irradiation surface is directed to the energy ray irradiation direction in the backside region, The energy beam irradiation system according to claim 6, wherein the energy beam irradiation system is configured to rotate by −180 degrees and return to an initial rotation angle while moving from the back region to the irradiation region. A first circulation mechanism that circulates a first workpiece, which is an object irradiated with energy rays, along a predetermined first orbit including an irradiation region of the energy rays;
A second turning mechanism for turning a second workpiece, which is an object irradiated with the energy rays, along a predetermined second turning track including the irradiation region;
The first orbit and the second orbit are on the same plane, and when viewed from a direction perpendicular to the orbiting plane on the plane, the region surrounded by the first orbit and the second orbit A workpiece transfer mechanism configured to overlap at least a part of a region surrounded by