JP5637266B2 - Surface plasmon enhanced fluorescence sensor and light collecting member used in surface plasmon enhanced fluorescence sensor - Google Patents

Surface plasmon enhanced fluorescence sensor and light collecting member used in surface plasmon enhanced fluorescence sensor Download PDF

Info

Publication number
JP5637266B2
JP5637266B2 JP2013151490A JP2013151490A JP5637266B2 JP 5637266 B2 JP5637266 B2 JP 5637266B2 JP 2013151490 A JP2013151490 A JP 2013151490A JP 2013151490 A JP2013151490 A JP 2013151490A JP 5637266 B2 JP5637266 B2 JP 5637266B2
Authority
JP
Japan
Prior art keywords
light
surface plasmon
fluorescence
enhanced fluorescence
fluorescence sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013151490A
Other languages
Japanese (ja)
Other versions
JP2013238611A (en
Inventor
幸登 中村
幸登 中村
正貴 松尾
正貴 松尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP2013151490A priority Critical patent/JP5637266B2/en
Publication of JP2013238611A publication Critical patent/JP2013238611A/en
Application granted granted Critical
Publication of JP5637266B2 publication Critical patent/JP5637266B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64Fluorescence; Phosphorescence
    • G01N21/645Specially adapted constructive features of fluorimeters
    • G01N21/648Specially adapted constructive features of fluorimeters using evanescent coupling or surface plasmon coupling for the excitation of fluorescence

Landscapes

  • Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Description

本発明は、表面プラズモン励起増強蛍光分光法(SPFS;Surface Plasmon-field enhanced Fluorescence Spectroscopy)の原理に基づいた表面プラズモン増強蛍光センサおよびこの表面プラズモン増強蛍光センサに用いられる集光部材に関する。   The present invention relates to a surface plasmon enhanced fluorescence sensor based on the principle of surface plasmon excitation enhanced fluorescence spectroscopy (SPFS) and a light collecting member used in the surface plasmon enhanced fluorescence sensor.

従来より、表面プラズモン励起増強蛍光分光法(SPFS)の原理に基づき、例えば生体内の極微少なアナライトの検出が行われている。   Conventionally, for example, detection of minute analytes in a living body has been performed based on the principle of surface plasmon excitation enhanced fluorescence spectroscopy (SPFS).

表面プラズモン励起増強蛍光分光法(SPFS)は、光源より照射したレーザ光(励起光)が金属薄膜表面で全反射減衰(ATR;attenuated total reflectance)する条件において、金属薄膜表面に粗密波(表面プラズモン)を発生させることによって、光源より照射したレーザ光(励起光)が有するフォトン量を数十倍〜数百倍に増やし(表面プラズモンの電場増強効果)、これにより金属薄膜近傍の蛍光物質を効率良く励起させることによって、極微量および/または極低濃度のアナライトを検出する方法である。   Surface plasmon excitation-enhanced fluorescence spectroscopy (SPFS) is a method in which a rough wave (surface plasmon) is generated on the surface of a metal thin film under the condition that the laser light (excitation light) irradiated from a light source attenuates total reflection (ATR) on the surface of the metal thin film. ) To increase the photon amount of the laser light (excitation light) emitted from the light source by several tens to several hundreds times (electric field enhancement effect of surface plasmons), thereby improving the efficiency of the fluorescent material near the metal thin film. It is a method for detecting an extremely small amount and / or an extremely low concentration of analyte by exciting well.

近年、このような表面プラズモン励起増強蛍光分光法(SPFS)の原理に基づいた表面プラズモン増強蛍光センサの開発が進められており、例えば特許文献1や特許文献2などにその技術開示がなされている。   In recent years, surface plasmon enhanced fluorescence sensors based on the principle of surface plasmon excitation enhanced fluorescence spectroscopy (SPFS) have been developed. For example, Patent Literature 1 and Patent Literature 2 disclose the technology thereof. .

このような表面プラズモン増強蛍光センサ100は、図6に示したように基本的な構造において、まず金属薄膜102と、金属薄膜102の一方側面に形成された反応層104と、他方側面に形成された誘電体部材106と、を有するチップ構造体108を備えている。   Such a surface plasmon enhanced fluorescence sensor 100 has a basic structure as shown in FIG. 6 and is first formed of a metal thin film 102, a reaction layer 104 formed on one side surface of the metal thin film 102, and the other side surface. A chip structure 108 having a dielectric member 106.

そして、チップ構造体108の誘電体部材106側には、誘電体部材106内に入射され、金属薄膜102に向かって励起光110を照射する光源112を備え、さらに光源112から照射され金属薄膜102で反射した金属薄膜反射光114を受光する受光手段116が備えられている。   The chip structure 108 includes a light source 112 that is incident on the dielectric member 106 and irradiates the excitation light 110 toward the metal thin film 102 on the dielectric member 106 side. The light receiving means 116 for receiving the metal thin film reflected light 114 reflected by the light is provided.

一方、チップ構造体108の反応層104側には、反応層104で捕捉されたアナライトを標識した蛍光物質が発する蛍光118を受光する光検出手段120が設けられている。   On the other hand, on the reaction layer 104 side of the chip structure 108, a light detection means 120 that receives fluorescence 118 emitted from a fluorescent substance labeled with the analyte captured by the reaction layer 104 is provided.

なお、反応層104と光検出手段120との間には、蛍光118を効率よく集光するための集光部材122と、蛍光118以外に含まれる光を除去し、必要な蛍光のみを選択する波長選択機能部材124が設けられている。   In addition, between the reaction layer 104 and the light detection means 120, the condensing member 122 for condensing the fluorescence 118 efficiently and the light contained other than the fluorescence 118 are removed, and only the necessary fluorescence is selected. A wavelength selection function member 124 is provided.

そして、表面プラズモン増強蛍光センサ100の使用においては、金属薄膜102上に、あらかじめ蛍光物質で標識されたアナライトが捕捉された反応層104を形成しておき、この状態で光源112より誘電体部材106内に励起光110を照射し、この励起光110が特定の角度(共鳴角)134で金属薄膜102に入射することで、金属薄膜102上に粗密波(表面プラズモン)を生ずることとなる。   When the surface plasmon enhanced fluorescence sensor 100 is used, the reaction layer 104 in which the analyte labeled with the fluorescent material is captured in advance is formed on the metal thin film 102, and in this state, the dielectric member from the light source 112 is formed. When the excitation light 110 is irradiated into the inside 106 and the excitation light 110 is incident on the metal thin film 102 at a specific angle (resonance angle) 134, coarse waves (surface plasmons) are generated on the metal thin film 102.

なお、金属薄膜102上に粗密波(表面プラズモン)が生ずる際には、励起光110と金属薄膜102中の電子振動とがカップリングし、金属薄膜反射光114の光量減少という現象が生ずる。   In addition, when a close-packed wave (surface plasmon) is generated on the metal thin film 102, the excitation light 110 and the electronic vibration in the metal thin film 102 are coupled, resulting in a phenomenon that the light amount of the metal thin film reflected light 114 is reduced.

このため、受光手段116で受光される金属薄膜反射光114のシグナルが変化(光量が減少)する地点を見つければ、粗密波(表面プラズモン)が生ずる共鳴角134を得ることができる。   For this reason, if the point where the signal of the metal thin film reflected light 114 received by the light receiving means 116 changes (the amount of light decreases) is found, the resonance angle 134 at which rough waves (surface plasmons) are generated can be obtained.

そして、この粗密波(表面プラズモン)を生ずる現象により、金属薄膜102上の反応層104の蛍光物質が効率良く励起され、これにより蛍光物質が発する蛍光118の光量が増大することとなる。   Then, due to the phenomenon of generating the rough wave (surface plasmon), the fluorescent material of the reaction layer 104 on the metal thin film 102 is efficiently excited, and thereby the light amount of the fluorescence 118 emitted from the fluorescent material is increased.

この増大した蛍光118を、集光部材122および波長選択機能部材124を介して光検出手段120で受光することで、極微量および/または極低濃度のアナライトを検出することができるようになっている。   By receiving the increased fluorescence 118 by the light detection means 120 via the light collecting member 122 and the wavelength selection function member 124, it becomes possible to detect an extremely small amount and / or extremely low concentration of the analyte. ing.

このように、表面プラズモン増強蛍光センサ100は、特に生体分子間などの微細な分子活動を観察可能とする高感度計測センサである。   Thus, the surface plasmon enhanced fluorescence sensor 100 is a high-sensitivity measurement sensor that enables observation of minute molecular activities, particularly between biomolecules.

特許第3294605号公報Japanese Patent No. 3294605 特開2006−208069号公報JP 2006-208069 A

しかしながら、上述したような従来の表面プラズモン増強蛍光センサ100では、集光部材122および波長選択機能部材124の両部材を用いて、増強された蛍光118を光検出手段120で検出するようになっているため、反応層104と光検出手段120との間が広くなってしまい、これにより蛍光118の集光効率が落ちてS/Nの値が低下するという問題が生ずる場合があった。   However, in the conventional surface plasmon enhanced fluorescence sensor 100 as described above, the enhanced fluorescence 118 is detected by the light detection means 120 using both the light collecting member 122 and the wavelength selection function member 124. Therefore, the space between the reaction layer 104 and the light detection means 120 is widened, which may cause a problem that the condensing efficiency of the fluorescence 118 is lowered and the S / N value is lowered.

また、このような集光部材122には通常レンズが用いられているが、レンズは非常に高価であり、焦点合わせが非常に大変なものもあった。   In addition, a lens is usually used for the light collecting member 122, but the lens is very expensive, and there are some cases where focusing is very difficult.

しかも、レンズでは十分な集光効率が確保できず、やはりS/Nの値が低くなってしまう問題を有するものであった。   In addition, the lens cannot secure sufficient light condensing efficiency, and the S / N value is low.

本発明はこのような現状に鑑みなされたものであって、集光効率が落ちてS/Nの値が低下することがなく、反応層と光検出手段との間が広くなってしまうことを抑えた表面プラズモン増強蛍光センサおよび表面プラズモン増強蛍光センサに用いられる集光部材を提供することを目的とする。   The present invention has been made in view of such a current situation, and the condensing efficiency does not decrease, the S / N value does not decrease, and the space between the reaction layer and the light detection means is widened. It is an object of the present invention to provide a suppressed surface plasmon enhanced fluorescence sensor and a light collecting member used for the surface plasmon enhanced fluorescence sensor.

また本発明は、レンズのように焦点合わせの必要がなく、製造コストを抑えた表面プラズモン増強蛍光センサおよび表面プラズモン増強蛍光センサに用いられる集光部材を提供することを目的とする。   Another object of the present invention is to provide a surface plasmon-enhanced fluorescent sensor and a condensing member used for the surface plasmon-enhanced fluorescent sensor that do not require focusing as in the case of a lens, and that reduce manufacturing costs.

本発明は、前述したような従来技術における問題点を解決するために発明されたものであって、
本発明の集光部材は、
金属薄膜の一方側面に励起光を照射し、前記金属薄膜上の電場を増強させることにより、前記金属薄膜の他方側面に形成された反応層の蛍光物質を励起させ、これにより増強された蛍光を光検出手段にて検出するようにした表面プラズモン増強蛍光センサに用いられる集光部材であって、
前記集光部材は、
前記反応層と前記光検出手段との間に配設されるものであって、
前記励起された蛍光を集光し、この蛍光を全反射条件で前記光検出手段に到達させる全反射機能部材から構成されており、
前記全反射機能部材が、円柱状の円柱本体部を有し、
前記円柱本体部の上面が前記光検出手段と対向し、下面が前記反応層と対向するように構成され、
前記円柱本体部の下面に、
前記蛍光以外の不要な光を除去する波長選択機能部材が配設され、
前記波長選択機能部材が、
前記円柱本体部の下面側の中央部分のみに配設されていることを特徴とする。
The present invention was invented to solve the problems in the prior art as described above,
The light collecting member of the present invention is
By irradiating one side surface of the metal thin film with excitation light and enhancing the electric field on the metal thin film, the fluorescent material in the reaction layer formed on the other side surface of the metal thin film is excited, thereby enhancing the fluorescence. A condensing member used in a surface plasmon-enhanced fluorescence sensor that is detected by a light detection means,
The condensing member is
Between the reaction layer and the light detection means,
Consists of a total reflection functional member that collects the excited fluorescence and causes the fluorescence to reach the light detection means under total reflection conditions,
The total reflection functional member has a columnar cylindrical main body,
The upper surface of the cylindrical body portion is configured to face the light detection means, and the lower surface is configured to face the reaction layer.
On the lower surface of the cylindrical main body,
A wavelength selection function member that removes unnecessary light other than the fluorescence is disposed,
The wavelength selection functional member is
It is arranged only in the central part on the lower surface side of the cylindrical main body.

このように集光部材が全反射機能部材で構成されていれば、反応層で生じた蛍光を、確実に光検出手段で検出することができるため、S/Nの値を上げて、超高精度な蛍光検出が可能である。   In this way, if the light collecting member is composed of a total reflection functional member, the fluorescence generated in the reaction layer can be reliably detected by the light detection means. Accurate fluorescence detection is possible.

また、全反射機能部材は、蛍光を集光し、この蛍光を全反射条件で光検出手段に到達させるものであるため、レンズのように焦点合わせの必要もなく、光検出手段と反応層との間隔を狭めることできる。   In addition, the total reflection functional member collects the fluorescent light and causes the fluorescent light to reach the light detection means under the total reflection condition. Therefore, there is no need for focusing unlike a lens, and the light detection means, the reaction layer, Can be narrowed.

さらに、従来の波長選択機能部材の役割を全反射機能部材に持たせることができ、その場合には、全反射機能部材のみで、従来の波長選択機能部材および集光部材の役割をなすことができるため、光検出手段と反応層との間隔をより狭めることができる。   Furthermore, the function of the conventional wavelength selection function member can be given to the total reflection function member, and in that case, the function of the conventional wavelength selection function member and the light collecting member can be made only by the total reflection function member. Therefore, the distance between the light detection means and the reaction layer can be further narrowed.

また、このように集光部材が円柱本体部を有していれば、反応層で生じた蛍光は、円柱本体部の下面から入射されて円柱本体部内で全反射し、さらに円柱本体部の上面より出射することで、この蛍光を光検出手段で検出することができるようになる。
さらに、円柱本体部の下面に、蛍光以外の不要な光を除去する波長選択機能部材が配設されていれば、蛍光以外の迷光を光検出手段で検出してしまうことを低減できるため、さらに超高精度な蛍光検出を行うことができる。
また、波長選択機能部材が円柱本体部の下面側の中央部分のみに配設されていれば、例えば、励起光の照射により誘電体部材から発生した自家蛍光やプラズモン発生時に発生した伝播光といった波長が異なる種類又は特定の波長の光を確実に除去することができる。このため、超高精度な蛍光検出を行うことができる。
さらに波長選択機能部材が、下面側の中央部分にあれば、反応層で生ずる蛍光以外の光のうち、金属薄膜下側の誘電体部材の自家蛍光に的を絞って除去することができる。
In addition, if the light collecting member has the cylindrical body portion in this way, the fluorescence generated in the reaction layer is incident from the lower surface of the cylindrical body portion and totally reflected in the cylindrical body portion, and further, the upper surface of the cylindrical body portion. By emitting more, this fluorescence can be detected by the light detection means.
Furthermore, if a wavelength selection function member that removes unnecessary light other than fluorescence is disposed on the lower surface of the cylindrical main body, it is possible to reduce detection of stray light other than fluorescence by the light detection means. Ultrahigh-precision fluorescence detection can be performed.
In addition, if the wavelength selection function member is disposed only in the central portion on the lower surface side of the cylindrical main body, for example, the wavelength of auto-fluorescence generated from the dielectric member due to excitation light irradiation or propagation light generated at the time of plasmon generation However, it is possible to reliably remove light of different types or specific wavelengths. For this reason, it is possible to perform ultra-high accuracy fluorescence detection.
Furthermore, if the wavelength selection function member is in the central portion on the lower surface side, it is possible to remove the light other than the fluorescence generated in the reaction layer by focusing on the autofluorescence of the dielectric member below the metal thin film.

また、本発明の表面プラズモン増強蛍光センサに用いられる集光部材は、
前記円柱本体部が、中実円柱状であることを特徴とする。
Further, the light collecting member used in the surface plasmon enhanced fluorescence sensor of the present invention is:
The cylindrical body portion is a solid cylindrical shape.

このように円柱本体部が中実円柱状であれば、全反射条件とすることが比較的容易である。   Thus, if the column main body is a solid columnar shape, it is relatively easy to achieve the total reflection condition.

なお、このような本発明の集光部材は、単に蛍光を確実に光検出手段で検出可能とすることに特化しているため、従来のレンズのように焦点合わせの必要もなく、また簡単な構造であるため、製造コストを抑えることもできる。   In addition, since the condensing member of the present invention as described above is specialized only to make it possible to reliably detect the fluorescence by the light detection means, there is no need for focusing as in the conventional lens, and it is simple. Because of the structure, manufacturing costs can be reduced.

また、本発明の表面プラズモン増強蛍光センサに用いられる集光部材は、
前記波長選択機能部材がさらに前記円柱本体部の上面に配設され、
前記波長選択機能部材は、
上面側と下面側とで除去対象となる光の波長が異なるように構成されていることを特徴とする。
Further, the light collecting member used in the surface plasmon enhanced fluorescence sensor of the present invention is:
The wavelength selection function member is further disposed on the upper surface of the cylindrical body part,
The wavelength selection functional member is:
It is characterized in that the wavelength of the light to be removed is different between the upper surface side and the lower surface side.

このように除去対象となる光の波長が異なるように波長選択機能部材を設ければ、例えば、励起光の照射により誘電体部材から発生した自家蛍光やプラズモン発生時に発生した伝播光といった波長が異なる2種類又はそれ以上の特定の波長の光を確実に除去することができる。このため、超高精度な蛍光検出を行うことができる。   If the wavelength selection function member is provided so that the wavelengths of light to be removed are different in this way, for example, the wavelengths such as autofluorescence generated from the dielectric member due to excitation light irradiation and propagation light generated at the time of plasmon generation are different. Two or more specific wavelengths of light can be reliably removed. For this reason, it is possible to perform ultra-high accuracy fluorescence detection.

また、本発明の表面プラズモン増強蛍光センサに用いられる集光部材は、
前記円柱本体部の上面に配設される前記波長選択機能部材は、
前記円柱本体部の上面の全面に配設されることを特徴とする。
Further, the light collecting member used in the surface plasmon enhanced fluorescence sensor of the present invention is:
The wavelength selection function member disposed on the upper surface of the cylindrical body part is:
It is arranged on the entire upper surface of the cylindrical main body.

このように波長選択機能部材が円柱本体部の上面の全面に配設されていれば、検出対象となる蛍光のみを選択的に取り出して、光検出手段で検出できるようになるため、超高精度な蛍光検出を行うことができる。   If the wavelength selection function member is disposed on the entire upper surface of the cylindrical body in this way, only the fluorescence to be detected can be selectively taken out and detected by the light detection means, so that it has an extremely high accuracy. Fluorescence detection can be performed.

また、本発明の表面プラズモン増強蛍光センサは、
上記いずれかに記載の集光部材を配設してなることを特徴とする。
このように上記した集光部材を配設してなる表面プラズモン増強蛍光センサであれば、集光部材が得意な構成を有しているため、超高精度な蛍光検出を行うことができる。
Further, the surface plasmon enhanced fluorescence sensor of the present invention,
The light collecting member according to any one of the above is provided.
Thus, if it is a surface plasmon intensification fluorescence sensor which arrange | positions the above-mentioned condensing member, since the condensing member has the structure which is excellent, it can perform a fluorescence detection with super high precision.

また、本発明の表面プラズモン増強蛍光センサは、
前記全反射機能部材の上面端部と前記光検出手段の端部との間隔が、5mm以内であることを特徴とする。
Further, the surface plasmon enhanced fluorescence sensor of the present invention,
The distance between the upper end portion of the total reflection functional member and the end portion of the light detection means is 5 mm or less.

このような間隔に設定すれば、集光部材内で全反射した蛍光が、光検出手段と全反射機能部材との間から、外部に散乱してしまうことを極力抑えることができるため、超高精度な蛍光検出を行うことができる。   By setting such an interval, it is possible to suppress as much as possible that the fluorescence totally reflected in the light collecting member is scattered outside between the light detection means and the total reflection functional member. Accurate fluorescence detection can be performed.

また、本発明の表面プラズモン増強蛍光センサは、
前記全反射機能部材の下面端部と前記反応層の端部との間隔が、5mm以内であることを特徴とする。
Further, the surface plasmon enhanced fluorescence sensor of the present invention,
The distance between the lower end portion of the total reflection functional member and the end portion of the reaction layer is within 5 mm.

このような間隔に設定すれば、反応層で生じた蛍光が、反応層と全反射機能部材との間から、外部に散乱してしまうことを極力抑えることができるため、超高精度な蛍光検出を行うことができる。   By setting such an interval, it is possible to suppress the fluorescence generated in the reaction layer from scattering between the reaction layer and the total reflection functional member as much as possible. It can be performed.

本発明によれば、集光部材が上記したような特異な構成を有しているため、従来のように集光効率が落ちてS/Nの値が低下することがなく、反応層と光検出手段との間が広くなってしまうことを抑えた表面プラズモン増強蛍光センサおよび表面プラズモン増強蛍光センサに用いられる集光部材を提供することができる。   According to the present invention, since the condensing member has the unique configuration as described above, the condensing efficiency does not decrease and the S / N value does not decrease as in the conventional case, and the reaction layer and the light It is possible to provide a surface plasmon-enhanced fluorescence sensor that suppresses the space between the detecting means and the light condensing member used in the surface plasmon-enhanced fluorescence sensor.

また、レンズのように焦点合わせの必要がなく、製造コストを抑えた表面プラズモン増強蛍光センサおよび表面プラズモン増強蛍光センサに用いられる集光部材を提供することができる。   Further, it is possible to provide a surface plasmon-enhanced fluorescent sensor and a condensing member used for a surface plasmon-enhanced fluorescent sensor that do not require focusing unlike a lens and that can be manufactured at a reduced cost.

図1は、本発明の表面プラズモン増強蛍光センサの概略図である。FIG. 1 is a schematic view of a surface plasmon enhanced fluorescence sensor of the present invention. 図2は、本発明の表面プラズモン増強蛍光センサに用いられる集光部材の第1の実施例を説明するための概略図である。FIG. 2 is a schematic view for explaining a first embodiment of a light collecting member used in the surface plasmon enhanced fluorescence sensor of the present invention. 図3(a)は中実円柱状の集光部材の上面図およびA−A断面図、図3(b)は中空円柱状の集光部材の上面図およびB−B断面図である。3A is a top view and a cross-sectional view taken along line AA of the solid cylindrical light-collecting member, and FIG. 3B is a top view and a cross-sectional view taken along line BB of the hollow cylindrical light-collecting member. 図4は、本発明の表面プラズモン増強蛍光センサに用いられる集光部材の第2の実施例であって、集光部材の上面および下面に凹面形状が設けられた状態を説明する概略図である。FIG. 4 is a schematic diagram illustrating a second embodiment of the light collecting member used in the surface plasmon enhanced fluorescence sensor according to the present invention, in which a concave shape is provided on the upper and lower surfaces of the light collecting member. . 図5は、本発明の表面プラズモン増強蛍光センサに用いられる集光部材の第3の実施例であって、集光部材の上面および下面に波長選択機能部材が設けられた状態を説明する概略図である。FIG. 5 is a schematic diagram illustrating a third embodiment of the light collecting member used in the surface plasmon enhanced fluorescence sensor of the present invention, in which a wavelength selection function member is provided on the upper and lower surfaces of the light collecting member. It is. 図6は、従来の表面プラズモン増強蛍光センサの概略図である。FIG. 6 is a schematic view of a conventional surface plasmon enhanced fluorescence sensor.

以下、本発明の実施の形態について、図面に基づいてより詳細に説明する。図1は、本発明の表面プラズモン増強蛍光センサの概略図、図2は、本発明の表面プラズモン増強蛍光センサに用いられる集光部材の第1の実施例を説明するための概略図、図3(a)は中実円柱状の集光部材の上面図およびA−A断面図、図3(b)は中空円柱状の集光部材の上面図およびB−B断面図である。   Hereinafter, embodiments of the present invention will be described in more detail based on the drawings. FIG. 1 is a schematic diagram of a surface plasmon enhanced fluorescence sensor of the present invention, FIG. 2 is a schematic diagram for explaining a first embodiment of a light collecting member used in the surface plasmon enhanced fluorescence sensor of the present invention, and FIG. (A) is a top view and AA sectional view of a solid cylindrical condensing member, and FIG. 3 (b) is a top view and BB sectional view of a hollow cylindrical condensing member.

本発明の表面プラズモン増強蛍光センサおよび表面プラズモン増強蛍光センサに用いられる集光部材は、集光効率が落ちてS/Nの値が低下することがなく、反応層と光検出手段との間が広くなってしまうことを抑え、さらに焦点合わせの必要がなく、製造コストを抑えることができるものである。   In the surface plasmon enhanced fluorescence sensor and the surface plasmon enhanced fluorescence sensor of the present invention, the light collection efficiency does not decrease and the S / N value does not decrease, and there is no gap between the reaction layer and the light detection means. It is possible to reduce the manufacturing cost by suppressing the widening, further eliminating the need for focusing.

<表面プラズモン増強蛍光センサ10>
本発明の表面プラズモン増強蛍光センサ10は、図1に示したように、まず金属薄膜12と、金属薄膜12の一方側面に形成された反応層14と、他方側面に形成された誘電体部材16と、を有するチップ構造体18を備えている。
<Surface plasmon enhanced fluorescence sensor 10>
As shown in FIG. 1, the surface plasmon enhanced fluorescence sensor 10 of the present invention includes a metal thin film 12, a reaction layer 14 formed on one side surface of the metal thin film 12, and a dielectric member 16 formed on the other side surface. And a chip structure 18 having the following.

そして、チップ構造体18の誘電体部材16側には、誘電体部材16内に入射され、金属薄膜12に向かって励起光20を照射する光源22を備え、さらに光源22から照射され金属薄膜12に反射した金属薄膜反射光24を受光する受光手段26が備えられている。   The chip structure 18 includes a light source 22 that is incident on the dielectric member 16 and irradiates the excitation light 20 toward the metal thin film 12 on the dielectric member 16 side. A light receiving means 26 for receiving the metal thin film reflected light 24 reflected by the light is provided.

光源22から照射される励起光20としてはレーザ光が好ましく、波長200〜900nm、0.001〜1,000mWのLDレーザ、または波長230〜800nm、0.01〜100mWの半導体レーザが好適である。   The excitation light 20 emitted from the light source 22 is preferably a laser beam, and an LD laser having a wavelength of 200 to 900 nm and 0.001 to 1,000 mW, or a semiconductor laser having a wavelength of 230 to 800 nm and 0.01 to 100 mW is suitable. .

一方、チップ構造体18の反応層14側には、反応層14で生じた蛍光28を受光する光検出手段30が設けられている。光検出手段30としては、超高感度の光電子増倍管、または多点計測が可能なCCDイメージセンサを用いることが好ましい。   On the other hand, on the reaction layer 14 side of the chip structure 18, a light detection means 30 that receives the fluorescence 28 generated in the reaction layer 14 is provided. As the light detection means 30, it is preferable to use an ultra-sensitive photomultiplier tube or a CCD image sensor capable of multipoint measurement.

なお、本発明の表面プラズモン増強蛍光センサ10においては、チップ構造体18の反応層14と光検出手段30との間に、全反射機能部材34を有する集光部材32が配設されている。   In the surface plasmon enhanced fluorescence sensor 10 of the present invention, a light collecting member 32 having a total reflection functional member 34 is disposed between the reaction layer 14 of the chip structure 18 and the light detection means 30.

このような集光部材32は、蛍光28を集光し、この蛍光28を全反射条件で光検出手段30に到達させるように構成されたものである。そして、このような表面プラズモン増強蛍光センサ10の使用においては、金属薄膜12上に、例えばあらかじめ蛍光物質が標識されたアナライトが捕捉された反応層14を設け、この状態で、光源22より誘電体部材16内に励起光20を照射し、この励起光20が特定の角度(共鳴角44)で金属薄膜12に入射することで、金属薄膜12上に粗密波(表面プラズモン)を生ずるようにすることができる。   Such a condensing member 32 is configured to condense the fluorescent light 28 and cause the fluorescent light 28 to reach the light detection means 30 under total reflection conditions. In use of such a surface plasmon enhanced fluorescence sensor 10, for example, a reaction layer 14 in which an analyte labeled with a fluorescent substance is captured is provided on the metal thin film 12. The body member 16 is irradiated with the excitation light 20, and the excitation light 20 is incident on the metal thin film 12 at a specific angle (resonance angle 44), so that a dense wave (surface plasmon) is generated on the metal thin film 12. can do.

なお、金属薄膜12上に粗密波(表面プラズモン)が生ずる際には、励起光20と金属薄膜12中の電子振動とがカップリングし、金属薄膜反射光24のシグナルが変化(光量が減少)することとなるため、受光手段26で受光される金属薄膜反射光24のシグナルが変化(光量が減少)する地点を見つければ良い。   Note that when a close-packed wave (surface plasmon) is generated on the metal thin film 12, the excitation light 20 and the electronic vibration in the metal thin film 12 are coupled, and the signal of the metal thin film reflected light 24 changes (the amount of light decreases). Therefore, it is only necessary to find a point where the signal of the metal thin film reflected light 24 received by the light receiving means 26 changes (the amount of light decreases).

そして、この粗密波(表面プラズモン)により、金属薄膜12上の反応層14の蛍光物質が効率良く励起され、これにより蛍光物質が発する蛍光28の光量が増大し、この蛍光28を、集光部材32を介して光検出手段30で収集することで、極微量および/または極低濃度のアナライトを検出することができる。   Then, due to this rough wave (surface plasmon), the fluorescent material of the reaction layer 14 on the metal thin film 12 is efficiently excited, thereby increasing the light quantity of the fluorescent light 28 emitted from the fluorescent material. By collecting by the light detection means 30 via 32, an extremely small amount and / or extremely low concentration of the analyte can be detected.

なお、チップ構造体18の金属薄膜12の材質としては、好ましくは金,銀,アルミニウム,銅,および白金からなる群から選ばれる少なくとも1種の金属からなり、より好ましくは金からなり、さらにこれら金属の合金からなることである。   The metal thin film 12 of the chip structure 18 is preferably made of at least one metal selected from the group consisting of gold, silver, aluminum, copper, and platinum, more preferably gold, It consists of a metal alloy.

このような金属は、酸化に対して安定であり、かつ粗密波(表面プラズモン)による電場増強が大きくなることから金属薄膜12に好適である。また、金属薄膜12の形成方法としては、例えばスパッタリング法,蒸着法(抵抗加熱蒸着法,電子線蒸着法等),電解メッキ,無電解メッキ法などが挙げられる。中でもスパッタリング法,蒸着法は、薄膜形成条件の調整が容易であるため好ましい。   Such a metal is suitable for the metal thin film 12 because it is stable against oxidation and the electric field enhancement due to the dense wave (surface plasmon) increases. Examples of the method for forming the metal thin film 12 include sputtering, vapor deposition (resistance heating vapor deposition, electron beam vapor deposition, etc.), electrolytic plating, electroless plating, and the like. Among these, the sputtering method and the vapor deposition method are preferable because the thin film formation conditions can be easily adjusted.

さらに金属薄膜12の厚さとしては、金:5〜500nm、銀:5〜500nm、アルミニウム:5〜500nm、銅:5〜500nm、白金:5〜500nm、およびそれらの合金:5〜500nmの範囲内であることが好ましい。   Further, the thickness of the metal thin film 12 is in the range of gold: 5 to 500 nm, silver: 5 to 500 nm, aluminum: 5 to 500 nm, copper: 5 to 500 nm, platinum: 5 to 500 nm, and alloys thereof: 5 to 500 nm. It is preferable to be within.

電場増強効果の観点からは、金:20〜70nm、銀:20〜70nm、アルミニウム:10〜50nm、銅:20〜70nm、白金:20〜70nm、およびそれらの合金:10〜70nmの範囲内であることがより好ましい。   From the viewpoint of the electric field enhancement effect, within the range of gold: 20-70 nm, silver: 20-70 nm, aluminum: 10-50 nm, copper: 20-70 nm, platinum: 20-70 nm, and alloys thereof: 10-70 nm More preferably.

金属薄膜12の厚さが上記範囲内であれば、粗密波(表面プラズモン)が発生し易く好適である。また、このような厚さを有する金属薄膜12であれば、大きさ(縦×横)は特に限定されないものである。   If the thickness of the metal thin film 12 is within the above range, close-packed waves (surface plasmons) are easily generated, which is preferable. Moreover, if it is the metal thin film 12 which has such thickness, a magnitude | size (length x width) will not be specifically limited.

一方、反応層14は、アナライトに蛍光物質を結合させたものを検体中に含有したものであり、このような検体としては、血液,血清,血漿,尿,鼻孔液,唾液,便,体腔液(髄液,腹水,胸水等)などが挙げられる。   On the other hand, the reaction layer 14 contains a sample in which a fluorescent substance is bound to an analyte, and examples of such a sample include blood, serum, plasma, urine, nasal fluid, saliva, stool, and body cavity. Fluid (spinal fluid, ascites, pleural effusion, etc.).

また、検体中に含有されるアナライトは、例えば、核酸(一本鎖であっても二本鎖であってもよいDNA,RNA,ポリヌクレオチド,オリゴヌクレオチド,PNA(ペプチド核酸)等、またはヌクレオシド,ヌクレオチドおよびそれらの修飾分子),タンパク質(ポリペプチド、オリゴペプチド等),アミノ酸(修飾アミノ酸も含む。),糖質(オリゴ糖,多糖類,糖鎖等),脂質,またはこれらの修飾分子,複合体などが挙げられ、具体的には、AFP(αフェトプロテイン)等のがん胎児性抗原や腫瘍マーカー,シグナル伝達物質,ホルモンなどであってもよく、特に限定されない。   The analyte contained in the sample is, for example, a nucleic acid (DNA, RNA, polynucleotide, oligonucleotide, PNA (peptide nucleic acid), which may be single-stranded or double-stranded, or nucleoside. , Nucleotides and their modified molecules), proteins (polypeptides, oligopeptides, etc.), amino acids (including modified amino acids), carbohydrates (oligosaccharides, polysaccharides, sugar chains, etc.), lipids, or modified molecules thereof, Specific examples thereof include a complex, and may be a carcinoembryonic antigen such as AFP (α-fetoprotein), a tumor marker, a signal transduction substance, a hormone, and the like, and is not particularly limited.

さらに蛍光物質としては、所定の励起光20を照射するか、または電界効果を利用することで励起し、蛍光28を発する物質であれば特に限定されないものである。なお本明細書でいう蛍光28とは、燐光など各種の発光も含まれるものである。   Furthermore, the fluorescent substance is not particularly limited as long as it is a substance that emits fluorescence 28 by being irradiated with predetermined excitation light 20 or excited by using a field effect. The fluorescence 28 in this specification includes various types of light emission such as phosphorescence.

また、誘電体部材16としては、光学的に透明な各種の無機物,天然ポリマー,合成ポリマーを用いることができ、化学的安定性,製造安定性および光学的透明性の観点から、二酸化ケイ素(SiO2)または二酸化チタン(TiO2)を含むことが好ましい。 As the dielectric member 16, various optically transparent inorganic substances, natural polymers, and synthetic polymers can be used. From the viewpoint of chemical stability, manufacturing stability, and optical transparency, silicon dioxide (SiO 2 2 ) or titanium dioxide (TiO 2 ).

さらに、このような表面プラズモン増強蛍光センサ10は、光源22から金属薄膜12に照射される励起光20による表面プラズモン共鳴の最適角(共鳴角44)を調整するため、角度可変部(図示せず)や、受光手段26および/または光検出手段30に入力された情報を処理するためのコンピュータ(図示せず)などを有しても良いものである。   Further, such a surface plasmon enhanced fluorescence sensor 10 adjusts an optimum angle (resonance angle 44) of surface plasmon resonance by the excitation light 20 irradiated from the light source 22 to the metal thin film 12, and therefore an angle variable unit (not shown). ), A computer (not shown) for processing information input to the light receiving means 26 and / or the light detecting means 30 or the like.

ここで、角度可変部(図示せず)は、サーボモータで全反射減衰(ATR)条件を求めるために受光手段26と光源22とを同期し、45〜85°の角度変更を可能とし、分解能が0.01°以上であることが好ましい。   Here, the angle variable unit (not shown) synchronizes the light receiving means 26 and the light source 22 in order to obtain the total reflection attenuation (ATR) condition with a servo motor, and enables an angle change of 45 to 85 °, and the resolution. Is preferably 0.01 ° or more.

このような構成を有する本発明の表面プラズモン増強蛍光センサ10は、上記したように集光部材32の構成が特徴的な構造を有している。以下、このような集光部材32について詳細に説明する。   As described above, the surface plasmon enhanced fluorescence sensor 10 of the present invention having such a configuration has a characteristic structure in the configuration of the light collecting member 32. Hereinafter, the light collecting member 32 will be described in detail.

<集光部材32>
本発明の表面プラズモン増強蛍光センサ10に用いられる集光部材32は、図2に示したように励起された蛍光28を集光し、この蛍光28を全反射条件で光検出手段30に到達させるようにした全反射機能部材34から構成されている。
<Condensing member 32>
The condensing member 32 used in the surface plasmon enhanced fluorescence sensor 10 of the present invention condenses the excited fluorescence 28 as shown in FIG. 2, and causes the fluorescence 28 to reach the light detection means 30 under total reflection conditions. The total reflection functional member 34 is configured as described above.

そして全反射機能部材34は、円柱本体部36を有し、光検出手段30に対向する側が上面38、反応層14と対向する側が下面40となっている。このような全反射機能部材34の材質は、蛍光28が全反射条件で光検出手段30へ到達できるものであれば、いかなる材質であっても良いが、好ましくはガラスまたは透明性樹脂を用いることが好ましい。   The total reflection functional member 34 has a cylindrical main body 36, and the side facing the light detection means 30 is the upper surface 38, and the side facing the reaction layer 14 is the lower surface 40. The material of the total reflection functional member 34 may be any material as long as the fluorescence 28 can reach the light detection means 30 under the total reflection condition, but preferably glass or a transparent resin is used. Is preferred.

なお、全反射機能部材34の上面38端部と、光検出手段30の端部との間隔の距離L1は、5mm以内であることが好ましく、より好ましくは2mm以内である。   In addition, it is preferable that the distance L1 of the space | interval of the upper surface 38 edge part of the total reflection functional member 34 and the edge part of the optical detection means 30 is less than 5 mm, More preferably, it is less than 2 mm.

一方、全反射機能部材34の下面40端部と、反応層14の端部との間隔の距離L2は、5mm以内であることが好ましく、より好ましくは2mm以内である。   On the other hand, the distance L2 between the end portion of the lower surface 40 of the total reflection functional member 34 and the end portion of the reaction layer 14 is preferably within 5 mm, and more preferably within 2 mm.

以上のような間隔の距離とすれば、集光部材32内で全反射した蛍光28が、光検出手段30と全反射機能部材34との間から、外部に散乱してしまうことを極力抑えることができ、また反応層14で生じた蛍光28が、反応層14と全反射機能部材34との間から、外部に散乱してしまうことを極力抑えることができるため、超高精度な蛍光検出を行うことができる。   When the distance is as described above, the fluorescence 28 totally reflected in the light collecting member 32 is prevented from being scattered outside between the light detection means 30 and the total reflection functional member 34 as much as possible. In addition, since it is possible to suppress the fluorescence 28 generated in the reaction layer 14 from being scattered outside between the reaction layer 14 and the total reflection functional member 34 as much as possible, ultrahigh-precision fluorescence detection can be performed. It can be carried out.

ところで、このようにして構成される集光部材32は、円柱本体部36の形状が、図3(a)に示したように中実円柱状であるか、図3(b)に示したように中空円柱状とすることができる。   By the way, the condensing member 32 configured in this way has a cylindrical main body 36 with a solid cylindrical shape as shown in FIG. 3 (a) or as shown in FIG. 3 (b). It can be made into a hollow cylindrical shape.

なお、図3(a)に示したように集光部材32が中実円柱状の場合には、蛍光28が全反射条件となるようにすることが比較的容易である。さらに図3(b)に示したように集光部材32が中空円柱状の場合には、筒状の内壁面あるいは外壁面を例えば鏡面層(図示せず)とし、蛍光28が全反射条件となるようにすることができる。   In addition, when the condensing member 32 is a solid cylindrical shape as shown in FIG. 3A, it is relatively easy to make the fluorescent light 28 satisfy the total reflection condition. Further, as shown in FIG. 3B, when the light collecting member 32 has a hollow cylindrical shape, the cylindrical inner wall surface or outer wall surface is, for example, a mirror surface layer (not shown), and the fluorescent light 28 is in a condition of total reflection. Can be.

このように、本発明の表面プラズモン増強蛍光センサ10に用いられる集光部材32は、上記したような特異な構造であるため、反応層14で生じた蛍光28の超高精度な検出を行うことができる。   Thus, since the condensing member 32 used in the surface plasmon enhanced fluorescence sensor 10 of the present invention has the unique structure as described above, it is possible to detect the fluorescence 28 generated in the reaction layer 14 with extremely high accuracy. Can do.

次に、図4に示した集光部材32は、本発明の第2の実施例における概略図である。図4に示した集光部材32は、図2および図3に示した第1の実施例の集光部材32と基本的には同じ構成であるので、同じ構成部材には同じ参照番号を付してその詳細な説明を省略する。   Next, the condensing member 32 shown in FIG. 4 is a schematic view in the second embodiment of the present invention. The condensing member 32 shown in FIG. 4 has basically the same configuration as the condensing member 32 of the first embodiment shown in FIG. 2 and FIG. Detailed description thereof will be omitted.

図4に示した集光部材32は、全反射機能部材34の上面38,下面40が凹面形状となっている点で、実施例1と異なっている。   The light collecting member 32 shown in FIG. 4 is different from the first embodiment in that the upper surface 38 and the lower surface 40 of the total reflection functional member 34 are concave.

このように全反射機能部材34の下面40が凹面形状となっていれば、反応層14で生じた蛍光28を凹面形状部46で効率良く集光して円柱本体部36内に取り込むことができる。また、全反射機能部材34の上面38を凹面形状とすることにより、円柱本体部36内で全反射した蛍光28を凹面形状部48で集光した状態で光検出手段30に送ることが可能である。   Thus, if the lower surface 40 of the total reflection functional member 34 has a concave shape, the fluorescent light 28 generated in the reaction layer 14 can be efficiently collected by the concave shape portion 46 and taken into the cylindrical body portion 36. . Further, by making the upper surface 38 of the total reflection functional member 34 into a concave shape, it is possible to send the fluorescent light 28 totally reflected in the cylindrical main body portion 36 to the light detection means 30 in a state where it is condensed by the concave shape portion 48. is there.

このため、反応層14で生じた蛍光28をさらに効率よく集光し、超高精度な蛍光検出を行うことができる。   For this reason, the fluorescence 28 generated in the reaction layer 14 can be collected more efficiently, and ultrahigh-precision fluorescence detection can be performed.

なお、図4においては、凹面形状部46,48が全反射機能部材34の上面38,下面40の両側に設けられているが、いずれか一方のみに形成されていても良いものであり、適宜選択可能なものである。但し、反応層14で生じた蛍光28を効率良く集光して円柱本体部36内に取り込むには、全反射機能部材34の下面40に凹面形状部46を設けることが好ましい。   In FIG. 4, the concave-shaped portions 46 and 48 are provided on both sides of the upper surface 38 and the lower surface 40 of the total reflection functional member 34, but may be formed on only one of them, as appropriate. It is selectable. However, in order to efficiently collect the fluorescent light 28 generated in the reaction layer 14 and take it into the cylindrical main body 36, it is preferable to provide a concave-shaped portion 46 on the lower surface 40 of the total reflection functional member 34.

次に、図5に示した集光部材32は、本発明の第3の実施例における概略図である。図5に示した集光部材32は、図2および図3に示した第1の実施例の集光部材32と基本的には同じ構成であるので、同じ構成部材には同じ参照番号を付してその詳細な説明を省略する。   Next, the condensing member 32 shown in FIG. 5 is a schematic view in the third embodiment of the present invention. The condensing member 32 shown in FIG. 5 has basically the same configuration as the condensing member 32 of the first embodiment shown in FIGS. 2 and 3, and therefore the same reference numerals are assigned to the same constituent members. Detailed description thereof will be omitted.

図5に示した集光部材32は、円柱本体部36の上面38および下面40に、蛍光28以外の不要な光を除去する波長選択機能部材42,50が配設されている点で、実施例1と異なっている。   The condensing member 32 shown in FIG. 5 is implemented in that wavelength selection function members 42 and 50 for removing unnecessary light other than the fluorescence 28 are disposed on the upper surface 38 and the lower surface 40 of the cylindrical main body 36. Different from Example 1.

このように波長選択機能部材42,50が配設されていれば、蛍光28以外の迷光を光検出手段30で検出してしまうことがなくなるため、さらに超高精度な蛍光検出を行うことができる。   If the wavelength selection function members 42 and 50 are provided in this way, stray light other than the fluorescence 28 is not detected by the light detection means 30, and therefore ultra-high-precision fluorescence detection can be performed. .

なお、円柱本体部36の上面38および下面40に配設される波長選択機能部材42,50は、上面38側と下面40側とで除去対象となる光の波長が異なるように構成されていることが好ましい。   The wavelength selection function members 42 and 50 disposed on the upper surface 38 and the lower surface 40 of the cylindrical main body 36 are configured such that the wavelengths of light to be removed are different between the upper surface 38 side and the lower surface 40 side. It is preferable.

このように除去対象となる光の波長が異なるようにすれば、特定の波長の光を確実に除去することができる。   Thus, if the wavelengths of light to be removed are different, light having a specific wavelength can be reliably removed.

なお、図5においては、下面40側の波長選択機能部材50が、下面40の一部分(中央部分)にのみ設けられているが、これは反応層14で生ずる蛍光物質の発する蛍光28の範囲52が半球面状であるのに対して、反応層14で生ずる蛍光28以外の光のうち、金属薄膜12下側の誘電体部材16の自家蛍光の範囲54が棒状であるため、この自家蛍光に的を絞って除去するためである。   In FIG. 5, the wavelength selection function member 50 on the lower surface 40 side is provided only in a part (center portion) of the lower surface 40, but this is a range 52 of the fluorescence 28 emitted from the fluorescent material generated in the reaction layer 14. Is a hemispherical shape, of the light other than the fluorescence 28 generated in the reaction layer 14, the autofluorescence range 54 of the dielectric member 16 below the metal thin film 12 is rod-shaped. This is to remove the target.

上面38側の波長選択機能部材42については、上面38の全面に設けられており、ここでは主にプラズモン発生時に発生する伝播光を除去するようになっている。   The wavelength selection function member 42 on the upper surface 38 side is provided on the entire upper surface 38, and here, the propagation light generated mainly when plasmons are generated is removed.

なお、このような波長選択機能部材42,50としては、光学フィルタ,カットフィルタなどを用いることができる。   In addition, as such wavelength selection function members 42 and 50, an optical filter, a cut filter, etc. can be used.

光学フィルタとしては、例えば、減光(ND)フィルタ,ダイアフラムレンズなどが挙げられる。またカットフィルタとしては、外光(装置外の照明光),励起光(励起光の透過成分),迷光(各所での励起光の散乱成分),プラズモンの散乱光(励起光を起源とし、プラズモン励起センサ表面上の構造体または付着物などの影響で発生する散乱光),酵素蛍光基質の自家蛍光などの各種ノイズ光を除去するフィルタであって、例えば干渉フィルタ,色フィルタなどが挙げられる。   Examples of the optical filter include a neutral density (ND) filter and a diaphragm lens. The cut filter includes external light (illumination light outside the device), excitation light (excitation light transmission component), stray light (excitation light scattering component at various points), and plasmon scattering light (excitation light originated from plasmon A filter that removes various types of noise light such as scattered light generated due to the influence of structures or deposits on the surface of the excitation sensor) and autofluorescence of the enzyme fluorescent substrate, such as an interference filter and a color filter.

このように除去対象となる光の発生箇所に合わせて波長選択機能部材42,50を設ければ、必要以上に蛍光28を除去してしまうことがなく、検出対象となる蛍光28のみを選択的に取り出して、光検出手段30で検出できるようになるため、さらに超高精度な蛍光検出を行うことができる。   If the wavelength selection function members 42 and 50 are provided in accordance with the generation location of light to be removed in this way, the fluorescence 28 is not removed more than necessary, and only the fluorescence 28 to be detected is selectively selected. Therefore, the light detection means 30 can detect the fluorescent light, so that it is possible to detect fluorescence with extremely high accuracy.

なお、図5においては、下面40側に配設された波長選択機能部材50は、円柱本体部36側に少し入った箇所に設けられているように図示されているが、これは説明の便宜のためであり、例えば下面40上に配設しても良いものである。   In FIG. 5, the wavelength selection function member 50 disposed on the lower surface 40 side is illustrated as being provided at a position slightly inserted on the cylindrical body 36 side, but this is for convenience of explanation. For example, it may be disposed on the lower surface 40.

以上、本発明における表面プラズモン増強蛍光センサ10およびこれに用いられる集光部材32の好ましい形態について説明したが、本発明は上記の形態に限定されるものではないものである。   The preferred embodiments of the surface plasmon enhanced fluorescence sensor 10 and the light collecting member 32 used therefor have been described above, but the present invention is not limited to the above embodiments.

例えば、図4に示した集光部材32の凹面形状部46,48に、図5に示した波長選択機能部材42をコーティングするなど、本発明の実施例1〜実施例3を適宜組み合わせた形態であっても良く、本発明の目的を逸脱しない範囲で種々の変更が可能なものである。   For example, the first to third embodiments of the present invention are appropriately combined, such as coating the wavelength-selective function member 42 shown in FIG. 5 on the concave shape portions 46 and 48 of the light collecting member 32 shown in FIG. However, various modifications can be made without departing from the object of the present invention.

10 表面プラズモン増強蛍光センサ
12 金属薄膜
14 反応層
16 誘電体部材
18 チップ構造体
20 励起光
22 光源
24 金属薄膜反射光
26 受光手段
28 蛍光
30 光検出手段
32 集光部材
34 全反射機能部材
36 円柱本体部
38 上面
40 下面
42 波長選択機能部材
44 共鳴角
46 凹面形状部
48 凹面形状部
50 波長選択機能部材
52 反応層で生ずる蛍光物質の発する蛍光の範囲
54 自家蛍光の範囲
L1 間隔の距離
L2 間隔の距離
100 表面プラズモン増強蛍光センサ
102 金属薄膜
104 反応層
106 誘電体部材
108 チップ構造体
110 励起光
112 光源
114 金属薄膜反射光
116 受光手段
118 蛍光
120 光検出手段
122 集光部材
124 波長選択機能部材
134 共鳴角
DESCRIPTION OF SYMBOLS 10 Surface plasmon enhancement fluorescence sensor 12 Metal thin film 14 Reaction layer 16 Dielectric member 18 Chip structure 20 Excitation light 22 Light source 24 Metal thin film reflected light 26 Light receiving means 28 Fluorescence 30 Photodetection means 32 Condensing member 34 Total reflection functional member 36 Cylinder Main body 38 Upper surface 40 Lower surface 42 Wavelength selection functional member 44 Resonance angle 46 Concave surface portion 48 Concave surface portion 50 Wavelength selection functional member 52 Range of fluorescence emitted by fluorescent material generated in reaction layer 54 Autofluorescence range L1 Distance L2 Distance Distance of 100 Surface plasmon enhanced fluorescence sensor 102 Metal thin film 104 Reaction layer 106 Dielectric member 108 Chip structure 110 Excitation light 112 Light source 114 Metal thin film reflected light 116 Light receiving means 118 Fluorescence 120 Photodetection means 122 Condensing member 124 Wavelength selection function member 134 Resonance angle

Claims (7)

金属薄膜の一方側面に励起光を照射し、前記金属薄膜上の電場を増強させることにより、前記金属薄膜の他方側面に形成された反応層の蛍光物質を励起させ、これにより増強された蛍光を光検出手段にて検出するようにした表面プラズモン増強蛍光センサに用いられる集光部材であって、
前記集光部材は、
前記反応層と前記光検出手段との間に配設されるものであって、
前記励起された蛍光を集光し、この蛍光を全反射条件で前記光検出手段に到達させる全反射機能部材から構成されており、
前記全反射機能部材が、円柱状の円柱本体部を有し、
前記円柱本体部の上面が前記光検出手段と対向し、下面が前記反応層と対向するように構成され、
前記円柱本体部の下面に、
前記蛍光以外の不要な光を除去する波長選択機能部材が配設され、
前記波長選択機能部材が、
前記円柱本体部の下面側の中央部分のみに配設されていることを特徴とする表面プラズモン増強蛍光センサに用いられる集光部材。
By irradiating one side surface of the metal thin film with excitation light and enhancing the electric field on the metal thin film, the fluorescent material in the reaction layer formed on the other side surface of the metal thin film is excited, thereby enhancing the fluorescence. A condensing member used in a surface plasmon-enhanced fluorescence sensor that is detected by a light detection means,
The condensing member is
Between the reaction layer and the light detection means,
Consists of a total reflection functional member that collects the excited fluorescence and causes the fluorescence to reach the light detection means under total reflection conditions,
The total reflection functional member has a columnar cylindrical main body,
The upper surface of the cylindrical body portion is configured to face the light detection means, and the lower surface is configured to face the reaction layer.
On the lower surface of the cylindrical main body,
A wavelength selection function member that removes unnecessary light other than the fluorescence is disposed,
The wavelength selection functional member is
A condensing member for use in a surface plasmon-enhanced fluorescent sensor, wherein the condensing member is disposed only in a central portion on a lower surface side of the cylindrical main body.
前記円柱本体部が、
中実円柱状であることを特徴とする請求項に記載の表面プラズモン増強蛍光センサに用いられる集光部材。
The cylindrical body portion is
The condensing member used for the surface plasmon enhanced fluorescence sensor according to claim 1 , wherein the condensing member has a solid cylindrical shape.
前記波長選択機能部材がさらに前記円柱本体部の上面に配設され、
前記波長選択機能部材は、
上面側と下面側とで除去対象となる光の波長が異なるように構成されていることを特徴とする請求項1または2に記載の表面プラズモン増強蛍光センサに用いられる集光部材。
The wavelength selection function member is further disposed on the upper surface of the cylindrical body part,
The wavelength selection functional member is:
The condensing member used for the surface plasmon enhanced fluorescence sensor according to claim 1 or 2 , wherein the wavelength of the light to be removed is different between the upper surface side and the lower surface side.
前記円柱本体部の上面に配設される前記波長選択機能部材は、
前記円柱本体部の上面の全面に配設されることを特徴とする請求項に記載の表面プラズモン増強蛍光センサに用いられる集光部材。
The wavelength selection function member disposed on the upper surface of the cylindrical body part is:
The condensing member used in the surface plasmon enhanced fluorescence sensor according to claim 3 , wherein the condensing member is disposed on the entire upper surface of the cylindrical main body.
請求項1からのいずれかに記載の集光部材を配設してなることを特徴とする表面プラズモン増強蛍光センサ。 Surface plasmon enhanced fluorescence sensor, characterized in that formed by disposing the light collector according to any one of claims 1 to 4. 前記全反射機能部材の上面端部と前記光検出手段の端部との間隔が、5mm以内であることを特徴とする請求項に記載の表面プラズモン増強蛍光センサ。 6. The surface plasmon enhanced fluorescence sensor according to claim 5 , wherein a distance between an upper end portion of the total reflection functional member and an end portion of the light detection means is within 5 mm. 前記全反射機能部材の下面端部と前記反応層の端部との間隔が、5mm以内であることを特徴とする請求項5または6に記載の表面プラズモン増強蛍光センサ。 The surface plasmon enhanced fluorescence sensor according to claim 5 or 6 , wherein a distance between a lower surface end portion of the total reflection functional member and an end portion of the reaction layer is within 5 mm.
JP2013151490A 2009-03-03 2013-07-22 Surface plasmon enhanced fluorescence sensor and light collecting member used in surface plasmon enhanced fluorescence sensor Active JP5637266B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013151490A JP5637266B2 (en) 2009-03-03 2013-07-22 Surface plasmon enhanced fluorescence sensor and light collecting member used in surface plasmon enhanced fluorescence sensor

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009049339 2009-03-03
JP2009049339 2009-03-03
JP2013151490A JP5637266B2 (en) 2009-03-03 2013-07-22 Surface plasmon enhanced fluorescence sensor and light collecting member used in surface plasmon enhanced fluorescence sensor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2011502718A Division JP5382107B2 (en) 2009-03-03 2010-02-24 Surface plasmon enhanced fluorescence sensor and light collecting member used in surface plasmon enhanced fluorescence sensor

Publications (2)

Publication Number Publication Date
JP2013238611A JP2013238611A (en) 2013-11-28
JP5637266B2 true JP5637266B2 (en) 2014-12-10

Family

ID=42709611

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2011502718A Active JP5382107B2 (en) 2009-03-03 2010-02-24 Surface plasmon enhanced fluorescence sensor and light collecting member used in surface plasmon enhanced fluorescence sensor
JP2013151490A Active JP5637266B2 (en) 2009-03-03 2013-07-22 Surface plasmon enhanced fluorescence sensor and light collecting member used in surface plasmon enhanced fluorescence sensor

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2011502718A Active JP5382107B2 (en) 2009-03-03 2010-02-24 Surface plasmon enhanced fluorescence sensor and light collecting member used in surface plasmon enhanced fluorescence sensor

Country Status (2)

Country Link
JP (2) JP5382107B2 (en)
WO (1) WO2010101052A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011257216A (en) * 2010-06-08 2011-12-22 Konica Minolta Holdings Inc Surface plasmon enhanced fluorescence sensor, and chip structure unit used for surface plasmon enhanced fluorescence sensor
JP6205993B2 (en) * 2013-08-28 2017-10-04 コニカミノルタ株式会社 Analysis chip
JP6221785B2 (en) * 2014-01-31 2017-11-01 コニカミノルタ株式会社 Detection apparatus and detection method
US9726606B2 (en) 2014-06-19 2017-08-08 Konica Minolta, Inc. Detection device
JP6673336B2 (en) * 2015-03-17 2020-03-25 コニカミノルタ株式会社 Detector
JP7205190B2 (en) * 2018-11-22 2023-01-17 ウシオ電機株式会社 Optical measuring instrument
WO2024057637A1 (en) * 2022-09-13 2024-03-21 富士フイルム株式会社 Inspection device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3718300B2 (en) * 1996-09-17 2005-11-24 株式会社トプコン Sample analyzer
US5776785A (en) * 1996-12-30 1998-07-07 Diagnostic Products Corporation Method and apparatus for immunoassay using fluorescent induced surface plasma emission
JP3778320B2 (en) * 1997-07-30 2006-05-24 日本分光株式会社 Circular dichroism fluorescence excitation spectrum measuring device
JP2000241708A (en) * 1999-02-19 2000-09-08 Tosoh Corp Light-condensing device for emission analysis and emission analysis device
JP2003294629A (en) * 2001-06-28 2003-10-15 Fuji Photo Film Co Ltd Method and apparatus for making biochemical analysis data
JP2005321344A (en) * 2004-05-11 2005-11-17 Kanazawa Univ Colorimetric analyzer
US20080262321A1 (en) * 2004-08-06 2008-10-23 Ramot At Tel Aviv University Ltd. Early Detection of Harmful Agents: Method, System and Kit
JP4370383B2 (en) * 2005-01-26 2009-11-25 独立行政法人産業技術総合研究所 Biomolecular interaction detection apparatus and detection method using plasmon resonance fluorescence
JP2007333497A (en) * 2006-06-14 2007-12-27 Hitachi High-Technologies Corp Fluorescence detection device and apparatus
JP4885019B2 (en) * 2007-03-15 2012-02-29 富士フイルム株式会社 Surface plasmon enhanced fluorescence sensor

Also Published As

Publication number Publication date
JP2013238611A (en) 2013-11-28
JPWO2010101052A1 (en) 2012-09-06
JP5382107B2 (en) 2014-01-08
WO2010101052A1 (en) 2010-09-10

Similar Documents

Publication Publication Date Title
JP5637266B2 (en) Surface plasmon enhanced fluorescence sensor and light collecting member used in surface plasmon enhanced fluorescence sensor
JP5573843B2 (en) Surface plasmon enhanced fluorescence measurement device
JP5971240B2 (en) Surface plasmon excitation enhanced fluorescence measuring apparatus and fluorescence detection method using the same
JP5949761B2 (en) Surface plasmon excitation enhanced fluorescence spectrometer and surface plasmon excitation enhanced fluorescence spectrometer
WO2010134470A1 (en) Surface plasmon field-enhanced fluorescence measurement device and plasmon excitation sensor used in surface plasmon field-enhanced fluorescence measurement device
JP2011257216A (en) Surface plasmon enhanced fluorescence sensor, and chip structure unit used for surface plasmon enhanced fluorescence sensor
JP2010203900A (en) Surface plasmon intensifying fluorescence sensor and chip structure used for the same
JP6098523B2 (en) SPFS measurement sensor chip, SPFS measurement method using SPFS measurement sensor chip, and SPFS measurement apparatus equipped with SPFS measurement sensor chip
JP5673211B2 (en) Optical specimen detector
JP5895965B2 (en) Surface plasmon enhanced fluorescence sensor and chip structure used for surface plasmon enhanced fluorescence sensor
WO2014017433A1 (en) Optical specimen detection device
JP5663905B2 (en) Chip structure
JP6003645B2 (en) Fluorescence detection apparatus and fluorescence detection method using the same
WO2014007134A1 (en) Sensor chip
JP5655917B2 (en) Chip structure
JP5387131B2 (en) Surface plasmon enhanced fluorescence sensor, chip structure used in surface plasmon enhanced fluorescence sensor, and specimen detection method using surface plasmon enhanced fluorescence sensor
JP5786985B2 (en) Surface plasmon enhanced fluorescence sensor and chip structure unit used for surface plasmon enhanced fluorescence sensor
JP4445886B2 (en) Flow cell unit, flow cytometer, and fluorescence detection method
JP5803933B2 (en) Surface plasmon excitation enhanced fluorescence measuring apparatus, sensor structure used therefor, and auxiliary dielectric member disposed in the sensor structure
JP2012251863A (en) Surface plasmon excitation enhanced fluorescence measuring device and sensor structure to be used for the same
CN102279175A (en) Device for directionally emitting enhanced Raman spectrums by utilizing surface plasmas

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140722

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140904

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140924

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141007

R150 Certificate of patent or registration of utility model

Ref document number: 5637266

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250