JP5624524B2 - 光子検出の光子検出システムおよび方法 - Google Patents
光子検出の光子検出システムおよび方法 Download PDFInfo
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- JP5624524B2 JP5624524B2 JP2011162986A JP2011162986A JP5624524B2 JP 5624524 B2 JP5624524 B2 JP 5624524B2 JP 2011162986 A JP2011162986 A JP 2011162986A JP 2011162986 A JP2011162986 A JP 2011162986A JP 5624524 B2 JP5624524 B2 JP 5624524B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
Description
図4は、アバランシェによるピークを有する自己分化された出力の実際のデータを示す。高周波では、完全に打ち消ししない自己分化をもたらす、ゲートバイアスの周波数での振動(図3eには図示せず)がしばしばある。このように、図4のデータはアバランシェ信号に加えてこの振動を示す。アバランシェピークを容易に識別することができることはデータから見られうる。
図6aでは、0.1のフラックス(μ)を有するビームは図3bのAPDを照明するために用いられる。0.051Vでの強いピークは、「ゼロ光子」ピークとして目立つ雑音により見られる。さらなるピークも、パルス内の1つの光子の検出により0.087Vに集中される測定のうちのいくつかにおいて観測される。それ以上、ピークは見られない。
Claims (4)
- アバランシェフォトダイオードによって検出された光子数を判定する方法であって、前記アバランシェフォトダイオードを通るアバランシェ電流が存在してから飽和するために必要な時間よりも短い時間経過後にアバランシェフォトダイオードでの照明によって誘導され前記アバランシェフォトダイオードから出力されるアバランシェ信号を測定し、前記アバランシェ信号の振幅形状に応じて光子数を判定することを具備する方法。
- 継続時間に前記アバランシェフォトダイオードの両端に前記アバランシェフォトダイオードの降伏電圧より大きなバイアスを印加することと、前記継続時間は、前記アバランシェフォトダイオードの照明の後に前記アバランシェフォトダイオードを通るアバランシェ電流が飽和するために必要である時間よりも短く、
前記アバランシェ信号の大きさを測定することと、を具備する請求項1の方法。 - 前記アバランシェ電流が飽和することを可能にする時間に、前記アバランシェフォトダイオードの両端に前記アバランシェフォトダイオードの降伏電圧より大きなバイアスを印加することと、
前記アバランシェ電流が飽和するのにかかる時間よりも少ない時間のうちに、前記アバランシェ信号を測定することと、を具備する請求項1または請求項2の方法。 - 前記アバランシェ信号の大きさは、検出されている光子数を判定するために、1以上の所定のレベルと比較される請求項1から3のいずれか1項の方法。
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GB0800083.8 | 2008-01-03 | ||
GB0800083.8A GB2456149B (en) | 2008-01-03 | 2008-01-03 | A photon detection system and a method of photon detection |
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JP5624524B2 true JP5624524B2 (ja) | 2014-11-12 |
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JP2011162986A Active JP5624524B2 (ja) | 2008-01-03 | 2011-07-26 | 光子検出の光子検出システムおよび方法 |
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US (2) | US8772700B2 (ja) |
JP (2) | JP5100839B2 (ja) |
GB (1) | GB2456149B (ja) |
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GB2475235B (en) | 2009-11-09 | 2014-01-08 | Toshiba Res Europ Ltd | A photon detector |
AU2011217069A1 (en) * | 2010-02-19 | 2012-09-06 | Lightship Medical Limited | Fluorescence measurement |
GB2479002B (en) * | 2010-03-26 | 2012-09-05 | Toshiba Res Europ Ltd | A photon detector |
KR101822847B1 (ko) * | 2010-10-06 | 2018-01-30 | 한국전자통신연구원 | 단일 광자 검출장치 및 광자 수 분해 검출장치 |
US8754356B2 (en) | 2010-10-06 | 2014-06-17 | Electronics And Telecommunications Research Institute | Single photon detector and photon number resolving detector |
US9354113B1 (en) * | 2010-11-05 | 2016-05-31 | Stc.Unm | Impact ionization devices under dynamic electric fields |
GB201020282D0 (en) * | 2010-11-30 | 2011-01-12 | Dev Ltd | An improved input device and associated method |
WO2013002430A1 (en) | 2011-06-28 | 2013-01-03 | Korea Institute Of Science And Technology | Single photon detector in the near infrared using an ingaas/inp avalanche photodiode operated with a bipolar rectangular gating signal. |
KR101966652B1 (ko) * | 2012-10-23 | 2019-04-09 | 아이디 퀀티크 에스.에이. | 반전계수를 이용한 단일 광자 검출장치 및 방법 |
US10128398B1 (en) | 2014-05-23 | 2018-11-13 | Stc.Unm | Resonance avalanche photodiodes for dynamic biasing |
KR101672509B1 (ko) * | 2015-06-05 | 2016-11-03 | 에스케이텔레콤 주식회사 | 단일광자검출장치 및 그 장치에 채용되는 수광소자 |
CN107505056A (zh) * | 2017-08-30 | 2017-12-22 | 浙江九州量子信息技术股份有限公司 | 一种GHz近红外单光子探测器雪崩信号提取系统 |
CN113588103B (zh) * | 2021-08-18 | 2022-07-29 | 国开启科量子技术(北京)有限公司 | 用于提取雪崩信号的方法和装置 |
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CA1298380C (en) * | 1988-10-19 | 1992-03-31 | National Research Council Of Canada | Method and system for increasing the effective dynamic range of a photosensor |
JPH04315965A (ja) * | 1991-04-15 | 1992-11-06 | Nippon Telegr & Teleph Corp <Ntt> | 電気光学サンプル・ホールド装置 |
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US8772700B2 (en) | 2014-07-08 |
US8716648B2 (en) | 2014-05-06 |
GB2456149B (en) | 2012-05-30 |
WO2009084744A3 (en) | 2009-09-24 |
JP2011508869A (ja) | 2011-03-17 |
US20100294919A1 (en) | 2010-11-25 |
GB2456149A (en) | 2009-07-08 |
US20120168612A1 (en) | 2012-07-05 |
JP5100839B2 (ja) | 2012-12-19 |
JP2011252918A (ja) | 2011-12-15 |
GB0800083D0 (en) | 2008-02-13 |
WO2009084744A2 (en) | 2009-07-09 |
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