JP5622195B2 - RE1Ba2Cu3O7−z超電導体 - Google Patents
RE1Ba2Cu3O7−z超電導体 Download PDFInfo
- Publication number
- JP5622195B2 JP5622195B2 JP2010176685A JP2010176685A JP5622195B2 JP 5622195 B2 JP5622195 B2 JP 5622195B2 JP 2010176685 A JP2010176685 A JP 2010176685A JP 2010176685 A JP2010176685 A JP 2010176685A JP 5622195 B2 JP5622195 B2 JP 5622195B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetization
- superconducting
- superconductor
- plane
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002887 superconductor Substances 0.000 title claims description 57
- 230000005415 magnetization Effects 0.000 claims description 169
- 230000004907 flux Effects 0.000 claims description 37
- 239000013078 crystal Substances 0.000 claims description 23
- 230000007423 decrease Effects 0.000 claims description 15
- 230000008859 change Effects 0.000 claims description 8
- 238000009833 condensation Methods 0.000 claims description 8
- 230000005494 condensation Effects 0.000 claims description 8
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 7
- 229910052727 yttrium Inorganic materials 0.000 claims description 7
- 229910052693 Europium Inorganic materials 0.000 claims description 6
- 229910052779 Neodymium Inorganic materials 0.000 claims description 6
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 6
- 229910052772 Samarium Inorganic materials 0.000 claims description 6
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 6
- 229910052689 Holmium Inorganic materials 0.000 claims description 5
- 238000013139 quantization Methods 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 238000012360 testing method Methods 0.000 description 46
- 238000000034 method Methods 0.000 description 17
- 230000000694 effects Effects 0.000 description 15
- 238000005259 measurement Methods 0.000 description 11
- 230000003247 decreasing effect Effects 0.000 description 5
- 238000007735 ion beam assisted deposition Methods 0.000 description 5
- 238000004549 pulsed laser deposition Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 230000001427 coherent effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 102100033962 GTP-binding protein RAD Human genes 0.000 description 1
- 101001132495 Homo sapiens GTP-binding protein RAD Proteins 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
- H10N60/855—Ceramic superconductors
- H10N60/857—Ceramic superconductors comprising copper oxide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0828—Introducing flux pinning centres
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Description
IBAD法とPLD法を使用するRR法を用いて、表1に示す試験線材Aと試験線材Bを、再度製造した。なお、試験線材AのΔφは5.3°で、試験線材BのΔφは2.9°であった。両試験線材において、超電導現象が発現する温度域で、冷却温度、磁場、及び、回転角を変えて、磁化特性を測定した。測定結果は、図5〜11に示す結果と同様であった。
2 試験線材
3 面内配向角Δφの結晶粒
4 面内配向した結晶粒
Claims (11)
- 超電導現象が発現する温度域において、外部磁場が増加から減少に、又は、減少から増加に転じて形成される磁化曲線が、磁化ゼロ近傍で、磁化変化率が略ゼロで推移する磁化ゼロ区域を有し、超電導体内の面内結晶配向度が6.0未満であることを特徴とするRE1Ba2Cu3O7-z超電導体。
ここで、REは、Y、Gd、Nd、Sm、Eu、Yb、Pr、及び、Hoの1種又は2種以上である。 - 前記磁化ゼロ区域の磁化差(ΔM)が、臨界電流密度の大きさと、線材幅、又は、フィラメントに分割されている場合にはフィラメント幅の積に、一対一に対応しないことを特徴とする請求項1に記載のRE1Ba2Cu3O7-z超電導体。
- 前記磁化曲線が、外部磁場の方向反転時に磁化が急激に落下する磁化急落区域を有することを特徴とする請求項1又は2に記載のRE1Ba2Cu3O7-z超電導体。
- 前記磁化曲線が、前記磁化ゼロ区域を曲線全域にわたって有することを特徴とする請求項1又は2に記載のRE1Ba2Cu3O7-z超電導体。
- 請求項1〜3のいずれか1項又は2項以上に記載の現象が顕著になることにより、磁化曲線が、外部磁場の増減時に、ほとんど膨らまない、即ち、外部磁場の増減時に、ほぼ同じ磁化軌跡をたどることを特徴とするRE1Ba2Cu3O7-z超電導体。
- 前記REがGdであることを特徴とする請求項1〜5のいずれか1項に記載のRE1Ba2Cu3O7-z超電導体。
- 前記REがYであることを特徴とする請求項1〜5のいずれか1項に記載のRE1Ba2Cu3O7-z超電導体。
- 前記REがY1-xGdx(0<x<1)であることを特徴とする請求項1〜5のいずれか1項に記載のRE1Ba2Cu3O7-z超電導体。
- 請求項1〜5のいずれか1項又は2項以上に記載の現象が、超電導電流輸送を主に担うCuO2超電導平面が主に二次元的に広がって、かつ、ある平面間隔で複数存在し、磁束又は量子化磁束がCuO2平面間に侵入したほうが、量子化磁束がCuO2平面に垂直成分を持って、又は、CuO2平面に対し垂直又は斜めに侵入するより超電導凝縮エネルギーの差分だけ系のエネルギーが低くて安定であるという原理に従って引き起こされることを特徴とする請求項1〜8のいずれか1項に記載のRE1Ba2Cu3O7-z超電導体。
- 超電導電流輸送を主に担うCuO2超電導平面が主に二次元的に広がって、かつ、ある平面間隔で複数存在し、磁束又は量子化磁束がCuO2平面間に侵入したほうが、量子化磁束がCuO2平面に垂直成分を持って、又は、CuO2平面に対し垂直又は斜めに侵入するより超電導凝縮エネルギーの差分だけ系のエネルギーが低くて安定であるという原理に従って、磁化が小さいという現象、及び/又は、ピンニングロスが小さいという現象が発現することを特徴とするRE1Ba2Cu3O7-z超電導体。
- 超電導電流輸送を主に担う超電導平面が主に二次元的に広がって、かつ、ある平面間隔で複数存在し、磁束又は量子化磁束が超電導平面間に侵入したほうが、量子化磁束が超電導平面に垂直成分を持って、又は、超電導平面に対し垂直又は斜めに侵入するより超電導凝縮エネルギーの差分だけ系のエネルギーが低くて安定であるという原理に従って、磁化が小さいという現象、及び/又は、ピンニングロスが小さいという現象が発現することを特徴とする超電導体。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010176685A JP5622195B2 (ja) | 2010-08-05 | 2010-08-05 | RE1Ba2Cu3O7−z超電導体 |
US13/154,684 US20120035055A1 (en) | 2010-08-05 | 2011-06-07 | RE1Ba2Cu3O7-z SUPERCONDUCTOR |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010176685A JP5622195B2 (ja) | 2010-08-05 | 2010-08-05 | RE1Ba2Cu3O7−z超電導体 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012038526A JP2012038526A (ja) | 2012-02-23 |
JP5622195B2 true JP5622195B2 (ja) | 2014-11-12 |
Family
ID=45556561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010176685A Expired - Fee Related JP5622195B2 (ja) | 2010-08-05 | 2010-08-05 | RE1Ba2Cu3O7−z超電導体 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20120035055A1 (ja) |
JP (1) | JP5622195B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5736522B2 (ja) * | 2012-12-28 | 2015-06-17 | 公益財団法人国際超電導産業技術研究センター | Re123系超電導線材およびその製造方法 |
JP6724125B2 (ja) * | 2018-12-26 | 2020-07-15 | 株式会社フジクラ | 酸化物超電導線材及びその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0764629B2 (ja) * | 1990-04-27 | 1995-07-12 | 財團法人工業技術研究院 | 高輸送限界電流密度を有するバルクY―Ba―Cu―O超伝導体の製造方法 |
JPH0768062B2 (ja) * | 1990-09-19 | 1995-07-26 | 科学技術庁金属材料技術研究所長 | 酸化物超伝導体の製造法 |
CA2112567A1 (en) * | 1991-07-01 | 1993-01-21 | Wei-Kan Chu | Method for producing formed bodies of high temperature superconductors having high critical currents |
DE69325995T2 (de) * | 1992-04-03 | 2000-04-20 | Nippon Steel Corp. | Verbundprodukt supraleitender oxidwerkstoffe und seine herstellung |
US5841211A (en) * | 1994-07-15 | 1998-11-24 | Boyes; Thomas G. | Superconducting generator and system therefor |
DE19847347C2 (de) * | 1998-10-14 | 2001-03-29 | Ldt Gmbh & Co | Magnetlager |
US7040002B2 (en) * | 2001-08-27 | 2006-05-09 | Pirelli Cavi E Sistemi S.P.A. | Method for terminating a conductor of a superconducting cable |
-
2010
- 2010-08-05 JP JP2010176685A patent/JP5622195B2/ja not_active Expired - Fee Related
-
2011
- 2011-06-07 US US13/154,684 patent/US20120035055A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20120035055A1 (en) | 2012-02-09 |
JP2012038526A (ja) | 2012-02-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Xu et al. | Angular dependence of Jc for YBCO coated conductors at low temperature and very high magnetic fields | |
Singh et al. | Ultrahigh critical current densities, the vortex phase diagram, and the effect of granularity of the stoichiometric high-T c superconductor CaKFe 4 As 4 | |
Kwok et al. | Vortices in high-performance high-temperature superconductors | |
Varanasi et al. | Thick YBa2Cu3O7− x+ BaSnO3 films with enhanced critical current density at high magnetic fields | |
Leroux et al. | Rapid doubling of the critical current of YBa2Cu3O7− δ coated conductors for viable high-speed industrial processing | |
Xu et al. | Role of weak uncorrelated pinning introduced by BaZrO 3 nanorods at low-temperature in (Y, Gd) Ba 2 Cu 3 O x thin films | |
Sylva et al. | Fe (Se, Te) coated conductors deposited on simple rolling-assisted biaxially textured substrate templates | |
Kenfaui et al. | An effective approach for the development of reliable YBCO bulk cryomagnets with high trapped field performances | |
JP2013545213A (ja) | 鉄系超伝導構造体及びその製造方法 | |
Xu et al. | Broad temperature pinning study of 15 mol.% Zr-Added (Gd, Y)–Ba–Cu–O MOCVD coated conductors | |
Mizuguchi et al. | Superconductivity in PbO-type Fe chalcogenides | |
Galstyan et al. | Correlation between microstructure and in-field performance of Zr-added REBCO coated conductors made by advanced MOCVD | |
Malmivirta et al. | Three ranges of the angular dependence of critical current of BaZrO3 doped YBa2Cu3O7− δ thin films grown at different temperatures | |
Miura et al. | Anisotropy and superconducting properties of BaFe2 (As1-xPx) 2 films with various phosphorus contents | |
JP5622195B2 (ja) | RE1Ba2Cu3O7−z超電導体 | |
Dogruer et al. | Influence of Sr/Nd partial replacement on fundamental properties of Bi-2223 superconducting system | |
Zhang et al. | Vortex phase diagram of the kagome superconductor CsV 3 Sb 5 | |
Chen et al. | Robust high-temperature magnetic pinning induced by proximity in YBa2Cu3O7− δ/La0. 67Sr0. 33MnO3 hybrids | |
Kikuchi et al. | Characteristics of Round and Extracted Strands of ${\hbox {Nb}} _ {3}\hbox {Al} $ Rutherford Cable | |
Zhang et al. | Magnetic field orientation dependence of flux pinning in (Gd, Y) Ba2Cu3O7− x coated conductor with tilted lattice and nanostructures | |
Duman et al. | The effect of fabrication method on physical properties of different Y211 and 20% Ag2O added YBCO sample | |
Teranishi et al. | Superconducting properties of ErBCO films with BaMO3 nanorods (M= Zr and Sn) by pulsed laser deposition | |
Iwakuma et al. | Unique behaviour of RE1Ba2Cu3O7− δ superconducting tapes producing drastic reduction of pinning loss | |
Li et al. | Evolution of Electromagnetic Properties and Microstructure With Sintering Temperature for ${\hbox {MgB}} _ {2}/{\hbox {Fe}} $ Wires Made by Combined In-Situ/Ex-Situ Process | |
Ulgen et al. | Development of modulation, pairing mechanism, and slip system with optimum vanadium substitution at Bi-sites in Bi-2212 ceramic structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130626 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20130626 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140428 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140603 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140801 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140819 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140916 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5622195 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |