JP5592712B2 - Bonded body and bonding material - Google Patents

Bonded body and bonding material Download PDF

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JP5592712B2
JP5592712B2 JP2010145084A JP2010145084A JP5592712B2 JP 5592712 B2 JP5592712 B2 JP 5592712B2 JP 2010145084 A JP2010145084 A JP 2010145084A JP 2010145084 A JP2010145084 A JP 2010145084A JP 5592712 B2 JP5592712 B2 JP 5592712B2
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resin
tank
softening point
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bonding material
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学 水谷
健一 三浦
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三井化学ファイン株式会社
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本発明は、接合体および接合材に関する。   The present invention relates to a joined body and a joining material.

従来、半導体装置や電子装置の製造装置には、種々のものが使用されている。たとえば、特許文献1には、半導体装置の製造装置である処理槽の開示がある。   2. Description of the Related Art Conventionally, various devices for manufacturing semiconductor devices and electronic devices have been used. For example, Patent Document 1 discloses a treatment tank that is a semiconductor device manufacturing apparatus.

特開平11−5279号公報Japanese Patent Laid-Open No. 11-5279

半導体装置や、電子装置の製造装置には、部品同士の良好な接合性が求められる。たとえば、上述したような処理槽等においては、部品同士の良好な接合性、すなわち、液体漏れなど気密性に対しての十分な信頼性が必要となる。したがって、このような要求に応じた接合体の開発が求められている。   Semiconductor devices and electronic device manufacturing apparatuses are required to have good bondability between components. For example, in a treatment tank or the like as described above, it is necessary to have sufficient reliability with respect to good bonding between components, that is, airtightness such as liquid leakage. Accordingly, there is a demand for the development of a joined body that meets such requirements.

本発明によれば、
樹脂(A)を含む第一部品と、
樹脂(B)を含む第二部品と、
前記第一部品と前記第二部品とを接合し、樹脂(C)を含む接合材と、を備え、
前記樹脂(C)の融点または軟化点(Tc)は、前記樹脂(A)の融点または軟化点(Ta)および前記樹脂(B)の融点または軟化点(Tb)以下である接合体が提供される。
According to the present invention,
A first part containing a resin (A);
A second part containing resin (B);
Bonding the first component and the second component, and a bonding material containing a resin (C),
A joined body is provided in which the melting point or softening point (Tc) of the resin (C) is equal to or lower than the melting point or softening point (Ta) of the resin (A) and the melting point or softening point (Tb) of the resin (B). The

ここで、樹脂(A)と、樹脂(B)は同じであってもよく、異なるものであってもよい。
また、Taは、樹脂(A)が結晶性樹脂である場合、融点を示し、樹脂(A)が非晶性樹脂である場合、軟化点を示す。
同様に、Tbは、樹脂(B)が結晶性樹脂である場合、融点を示し、樹脂(B)が非晶性樹脂である場合、軟化点を示す。
さらに、Tcは、樹脂(C)が結晶性樹脂である場合、融点を示し、樹脂(C)が非晶性樹脂である場合、軟化点を示す。
この発明では接合材と第一部品との密着性、接合材と第二部品との密着性が良好となる。これにより、第一部品、第二部品間の接合が良好となる。
Here, the resin (A) and the resin (B) may be the same or different.
Ta represents a melting point when the resin (A) is a crystalline resin, and represents a softening point when the resin (A) is an amorphous resin.
Similarly, Tb indicates a melting point when the resin (B) is a crystalline resin, and indicates a softening point when the resin (B) is an amorphous resin.
Further, Tc indicates a melting point when the resin (C) is a crystalline resin, and indicates a softening point when the resin (C) is an amorphous resin.
In this invention, the adhesiveness between the bonding material and the first component and the adhesiveness between the bonding material and the second component are good. Thereby, joining between a 1st component and a 2nd component becomes favorable.

また、本発明によれば、
樹脂(A)を含む第一部品と、
樹脂(B)を含む第二部品とを接合するための接合材であって、
樹脂(C)を含み、
前記樹脂(C)の融点または軟化点(Tc)は、前記樹脂(A)の融点または軟化点(Ta)および前記樹脂(B)の融点または軟化点(Tb)以下である接合材も提供できる。
ここで、樹脂(A)と、樹脂(B)は同じであってもよく、異なるものであってもよい。
また、Taは、樹脂(A)が結晶性樹脂である場合、融点を示し、樹脂(A)が非晶性樹脂である場合、軟化点を示す。
同様に、Tbは、樹脂(B)が結晶性樹脂である場合、融点を示し、樹脂(B)が非晶性樹脂である場合、軟化点を示す。
さらに、Tcは、樹脂(C)が結晶性樹脂である場合、融点を示し、樹脂(C)が非晶性樹脂である場合、軟化点を示す。
Moreover, according to the present invention,
A first part containing a resin (A);
A joining material for joining the second component containing the resin (B),
Including resin (C),
A bonding material in which the melting point or softening point (Tc) of the resin (C) is not higher than the melting point or softening point (Ta) of the resin (A) and the melting point or softening point (Tb) of the resin (B) can also be provided. .
Here, the resin (A) and the resin (B) may be the same or different.
Ta represents a melting point when the resin (A) is a crystalline resin, and represents a softening point when the resin (A) is an amorphous resin.
Similarly, Tb indicates a melting point when the resin (B) is a crystalline resin, and indicates a softening point when the resin (B) is an amorphous resin.
Further, Tc indicates a melting point when the resin (C) is a crystalline resin, and indicates a softening point when the resin (C) is an amorphous resin.

本発明によれば、第一部品と第二部品との接合が良好である接合体、さらには、この接合体に使用される接合材が提供される。 ADVANTAGE OF THE INVENTION According to this invention, the joining body with which joining of a 1st component and a 2nd component is favorable, and also the joining material used for this joined body are provided.

本発明の一実施形態にかかる処理槽を示す斜視図である。It is a perspective view which shows the processing tank concerning one Embodiment of this invention. 槽壁を突き合わせて、接合材を挿入する状態を示す図である。It is a figure which shows the state which matches a tank wall and inserts a joining material. 槽壁と底面部とを突き合わせて、接合材を挿入する状態を示す図である。It is a figure which shows the state which butt | matches a tank wall and a bottom face part, and inserts a joining material. 本発明の変形例にかかる図である。It is a figure concerning the modification of this invention. 本発明の変形例にかかる図である。It is a figure concerning the modification of this invention. 本発明の変形例にかかる図である。It is a figure concerning the modification of this invention. 本発明の変形例にかかる図である。It is a figure concerning the modification of this invention.

以下、本発明の実施形態を図面に基づいて説明する。
はじめに、図1を参照して、本実施形態の概要について説明する。
本実施形態の接合体1は、樹脂(A)を含む第一部品(槽壁11、槽壁12、底面部14のいずれか)と、樹脂(B)を含む第二部品(第一部品とは異なる部材であり、槽壁11、槽壁12、底面部14のいずれか)と、前記第一部品と前記第二部品とを接合し、樹脂(C)を含む接合材13と、を備える。
樹脂(C)の融点または軟化点Tcは、樹脂(A)の融点または軟化点Ta以下であり、かつ、樹脂(B)の融点または軟化点Tb以下である。樹脂(C)のTcが樹脂(A)のTa、樹脂(B)のTb以下であるため、第一部品と第二部品との接合性を良好なものとすることができる。
ここで、Taは、樹脂(A)が結晶性樹脂である場合、融点を示し、樹脂(A)が非晶性樹脂である場合、軟化点を示す。
同様に、Tbは、樹脂(B)が結晶性樹脂である場合、融点を示し、樹脂(B)が非晶性樹脂である場合、軟化点を示す。
さらに、Tcは、樹脂(C)が結晶性樹脂である場合、融点を示し、樹脂(C)が非晶性樹脂である場合、軟化点を示す。
ここで、融点は、DSC法により昇温時に現れる吸熱ピークにより測定できる。軟化点は、JIS K7206で規定されているビカット軟化温度法などで測定できる。
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
First, the outline of the present embodiment will be described with reference to FIG.
The joined body 1 of the present embodiment includes a first part (one of the tank wall 11, the tank wall 12, and the bottom surface part 14) containing the resin (A) and a second part (first part) containing the resin (B). Is a different member, and includes a tank wall 11, a tank wall 12, and a bottom surface part 14), and a bonding material 13 that joins the first part and the second part and includes a resin (C). .
The melting point or softening point Tc of the resin (C) is not higher than the melting point or softening point Ta of the resin (A) and not higher than the melting point or softening point Tb of the resin (B). Since the Tc of the resin (C) is equal to or less than the Ta of the resin (A) and the Tb of the resin (B), the bondability between the first component and the second component can be improved.
Here, Ta indicates a melting point when the resin (A) is a crystalline resin, and indicates a softening point when the resin (A) is an amorphous resin.
Similarly, Tb indicates a melting point when the resin (B) is a crystalline resin, and indicates a softening point when the resin (B) is an amorphous resin.
Further, Tc indicates a melting point when the resin (C) is a crystalline resin, and indicates a softening point when the resin (C) is an amorphous resin.
Here, melting | fusing point can be measured by the endothermic peak which appears at the time of temperature rising by DSC method. The softening point can be measured by the Vicat softening temperature method specified in JIS K7206.

樹脂(A)、(B)は、同じ樹脂であってもよく、異なるものであってもよい。
樹脂(A)、樹脂(B)、樹脂(C)は、それぞれ以下の中から選択することができ、TcがTa、Tbより小さくなるように、各樹脂を選択すればよい。
4−メチル−1−ペンテン(共)重合体、ポリエチレン、ポリスチレン、AS(アクリロニトリル−スチレン共重合体)樹脂、ABS(アクリロニトリル−ブタジエン―スチレン共重合体)樹脂、ポリプロピレン、メタクリル樹脂、ポリフッ化ビニリデン等のフッ素樹脂、ポリカーボネート、ポリアセタール、ポリエチレンテレフタレート、ポリブチレンテレフタレート、変性ポリフェニレンエーテル
なかでも、環境保護の観点や、コストの観点から樹脂(A)、(B)、(C)は、塩化ビニル樹脂、フッ素樹脂以外の樹脂であることが好ましい。
Resins (A) and (B) may be the same resin or different ones.
The resin (A), the resin (B), and the resin (C) can be selected from the following, and each resin may be selected so that Tc is smaller than Ta and Tb.
4-methyl-1-pentene (co) polymer, polyethylene, polystyrene, AS (acrylonitrile-styrene copolymer) resin, ABS (acrylonitrile-butadiene-styrene copolymer) resin, polypropylene, methacrylic resin, polyvinylidene fluoride, etc. Among these, resins (A), (B), and (C) are vinyl chloride resins, fluorine from the viewpoints of environmental protection and cost, among others, from the viewpoints of environmental protection and cost. A resin other than the resin is preferable.

このような樹脂群のなかから、樹脂(A)、樹脂(B)、樹脂(C)を選択することで、第一部品と第二部品とを接合材13を介して確実に接合できるとともに、薬液に対し、耐性の高い接合体1を得ることができる。   By selecting the resin (A), the resin (B), and the resin (C) from such a resin group, the first component and the second component can be reliably bonded via the bonding material 13, The bonded body 1 having high resistance to the chemical solution can be obtained.

なかでも、樹脂(A)の融点または軟化点Taと樹脂(C)の融点または軟化点Tcとの差、樹脂(B)の融点または軟化点Tbと樹脂(C)の融点または軟化点Tcとの差はそれぞれ0℃以上、30℃以下であることが好ましい。なかでも、TcがTaおよびTb未満であることが好ましく、TaとTcとの差、TbとTcとの差は、10℃以上であることが好ましい。
TaとTcとの差、TbとTcとの差を0℃以上、特にTcをTaおよびTb未満とすることで第一部品と第二部品とを接合材13を介して、第一部品および第二部品の熱による変形を最小限に抑えつつ確実に接合できる。
一方で、TaとTcとの差、TbとTcとの差を30℃以下とすることで、樹脂(A)または樹脂(B)が本来有している耐熱性に由来する"接合体全体の耐熱性"を損なわないという効果がある。
より、好ましい組み合わせとしては、たとえば、以下のような組み合わせがある。
樹脂(A)、(B)、(C)としてポリスチレン、4−メチル−1−ペンテン(共)重合体を使用することで、より耐薬品性の高い接合体を得ることができる。
Among them, the difference between the melting point or softening point Ta of the resin (A) and the melting point or softening point Tc of the resin (C), the melting point or softening point Tb of the resin (B) and the melting point or softening point Tc of the resin (C) The differences are preferably 0 ° C. or more and 30 ° C. or less, respectively. Especially, it is preferable that Tc is less than Ta and Tb, and it is preferable that the difference between Ta and Tc and the difference between Tb and Tc is 10 ° C. or more.
By making the difference between Ta and Tc, and the difference between Tb and Tc 0 ° C. or more, particularly Tc less than Ta and Tb, the first part and the second part are connected to each other through the bonding material 13. The two parts can be reliably joined while minimizing deformation caused by heat.
On the other hand, by setting the difference between Ta and Tc and the difference between Tb and Tc to 30 ° C. or less, the resin (A) or the resin (B) originally derived from the heat resistance inherent in the “joint as a whole. There is an effect that the "heat resistance" is not impaired.
More preferable combinations include, for example, the following combinations.
By using polystyrene and 4-methyl-1-pentene (co) polymer as the resins (A), (B), and (C), it is possible to obtain a bonded body with higher chemical resistance.

Figure 0005592712
Figure 0005592712

次に、本実施形態の接合体1について詳細に説明する。
接合体1は、半導体装置の製造装置あるいは電子装置の製造装置に使用されるものであることが好ましい。
以下では、図1に示すように、接合体1を処理槽1とした場合を例にあげて説明する。
処理槽1は、半導体ウェハを湿式処理するための槽であり、たとえば、エッチング槽である。
処理槽1は、槽壁11と、槽壁12とを接合するとともに、各槽壁11、12と、底面部14とを接合したものである。
槽壁11は、上述した第一部品または第二部品に該当するものである。
槽壁12は、上述した第一部品または第二部品に該当するものである。
底面部14は、上述した第一部品または第二部品に該当するものである。
槽壁11,12、底面部14は、異なる材料で構成されていてもよいが、接合性の観点から、同じ材料で構成されることが好ましい。
槽壁11,12、底面部14はそれぞれ押出し成型、圧縮成型、射出成型等で得ることができる成型品である。槽壁11,12の端部には、図2に示すように切欠き111,121が形成されている。なお、図3に示すように、底面部14にも切欠き141が形成されている。
接合材13は、本実施形態では、槽壁11,12同士、槽壁11と底面部14、槽壁12と底面部14を接合するための溶接棒である。
Next, the joined body 1 of the present embodiment will be described in detail.
The bonded body 1 is preferably used in a semiconductor device manufacturing apparatus or an electronic device manufacturing apparatus.
Below, as shown in FIG. 1, the case where the conjugate | zygote 1 is made into the process tank 1 is mentioned as an example, and is demonstrated.
The processing tank 1 is a tank for wet processing a semiconductor wafer, and is, for example, an etching tank.
The treatment tank 1 is obtained by joining the tank wall 11 and the tank wall 12 and joining the tank walls 11 and 12 and the bottom surface part 14.
The tank wall 11 corresponds to the first component or the second component described above.
The tank wall 12 corresponds to the first component or the second component described above.
The bottom surface portion 14 corresponds to the first component or the second component described above.
The tank walls 11 and 12 and the bottom surface part 14 may be made of different materials, but are preferably made of the same material from the viewpoint of bonding properties.
The tank walls 11 and 12 and the bottom surface portion 14 are molded products that can be obtained by extrusion molding, compression molding, injection molding, or the like. Notches 111 and 121 are formed at the ends of the tank walls 11 and 12 as shown in FIG. As shown in FIG. 3, a notch 141 is also formed in the bottom surface portion 14.
In this embodiment, the joining material 13 is a welding rod for joining the tank walls 11 and 12, the tank wall 11 and the bottom surface portion 14, and the tank wall 12 and the bottom surface portion 14.

図2に示すように、槽壁11の端面と槽壁12の表面(板面)とを対向させ、槽壁11,12の端部に形成された切欠き111,121により形成される凹部15に、接合材13を挿入する。その後、接合材13を熱風等で融点あるいは軟化点以上に加熱して、接合材13を溶融させ、槽壁11と槽壁12とを接合する。接合材13は、槽壁11に融着するとともに、槽壁12にも融着する。
なお、槽壁11と底面部14との接合、槽壁12と底面部14との接合も同様の方法で実施できる。すなわち、たとえば、図3に示すように、槽壁12の底面部14側の端部に切欠き122を形成し、さらに、底面部14の槽壁12側の端部に切欠き141を形成しておく。そして、底面部14の端面と槽壁12の表面とを対向させて、切欠き141、122により形成される凹部16に接合材13を挿入する。その後、接合材13を熱風等で融点あるいは軟化点以上に加熱して、接合材13を溶融させ、槽壁12と底面部14とを接合する。
槽壁11と底面部14との接合も同様である。
As shown in FIG. 2, the recess 15 formed by the notches 111 and 121 formed at the ends of the tank walls 11 and 12 with the end surface of the tank wall 11 and the surface (plate surface) of the tank wall 12 facing each other. Then, the bonding material 13 is inserted. Thereafter, the bonding material 13 is heated to a melting point or a softening point or higher with hot air or the like to melt the bonding material 13, and the tank wall 11 and the tank wall 12 are bonded. The bonding material 13 is fused to the tank wall 11 and also to the tank wall 12.
In addition, joining of the tank wall 11 and the bottom face part 14, and joining of the tank wall 12 and the bottom face part 14 can be implemented by the same method. That is, for example, as shown in FIG. 3, a notch 122 is formed at the end of the tank wall 12 on the bottom wall 14 side, and a notch 141 is formed at the end of the bottom wall 14 on the tank wall 12 side. Keep it. Then, the bonding material 13 is inserted into the recess 16 formed by the notches 141 and 122 with the end surface of the bottom surface portion 14 and the surface of the tank wall 12 facing each other. Thereafter, the bonding material 13 is heated to a melting point or a softening point or higher with hot air or the like to melt the bonding material 13, and the tank wall 12 and the bottom surface portion 14 are bonded.
The joining of the tank wall 11 and the bottom surface part 14 is the same.

ここで、接合材13は、槽壁11,12、底面部14に含まれる前記樹脂(A)のTaおよび樹脂(B)のTb以下のTcを有する樹脂(C)を含む。樹脂(C)は、樹脂(A)、(B)に融着する。
接合材13の構造としては、接合した際に、槽壁や底面部などの部品との接合界面に樹脂(C)が局在する構造が好ましい。このような構造は、樹脂(C)の粉末を棒状の基材となる樹脂の表面にまぶしたり、該粉末を適当な炭化水素系溶剤に溶解させたワニスを調製し、これを棒状の基材に塗布後、風乾させるなどの方法で得ることができる。
また、これらの加工コストを抑える目的で、接合材13は、基材成分樹脂と前記樹脂樹脂(C)とをブレンドし、成形した構造であっても構わない。
基材としては、槽壁11,12や底面部14などの部品と相溶する樹脂が好ましく、槽壁11,12や底面部14などの部品と同一組成であることが接合性の点でさらに好ましい。
また、接合材13は、前記樹脂(C)からなるものであってもよい。
ここで、槽壁11,12、底面部14が同じ樹脂を含む場合、接合材13は、槽壁11,12、底面部14と同じ前記樹脂を含むことが好ましい。すなわち、樹脂(A)、樹脂(B)が同じ樹脂である場合、接合材13は、樹脂(A)を含むことが好ましい。なかでも、槽壁11,12、底面部14が樹脂(A)からなる場合、接合材13は、樹脂(A)および樹脂(C)からなることが好ましい。この場合、接合材13は、接合性の観点から樹脂(C)を40重量%以上、100重量%以下含有することが好ましい。
Here, the bonding material 13 includes the resin (C) having Ta of the resin (A) and Tc of Tb of the resin (B) contained in the tank walls 11 and 12 and the bottom surface portion 14. The resin (C) is fused to the resins (A) and (B).
The structure of the bonding material 13 is preferably a structure in which the resin (C) is localized at the bonding interface with components such as the tank wall and the bottom surface when bonded. In such a structure, the resin (C) powder is coated on the surface of a resin to be a rod-shaped substrate, or a varnish in which the powder is dissolved in an appropriate hydrocarbon solvent is prepared, and this is used as a rod-shaped substrate. It can be obtained by a method such as air drying after coating.
Moreover, for the purpose of suppressing these processing costs, the bonding material 13 may have a structure in which a base component resin and the resin resin (C) are blended and molded.
The base material is preferably a resin that is compatible with the parts such as the tank walls 11 and 12 and the bottom surface part 14, and further has the same composition as the parts such as the tank walls 11 and 12 and the bottom surface part 14 in terms of bondability. preferable.
Further, the bonding material 13 may be made of the resin (C).
Here, when the tank walls 11 and 12 and the bottom part 14 contain the same resin, it is preferable that the bonding material 13 contains the same resin as the tank walls 11 and 12 and the bottom part 14. That is, when the resin (A) and the resin (B) are the same resin, the bonding material 13 preferably includes the resin (A). Especially, when tank wall 11 and 12 and the bottom face part 14 consist of resin (A), it is preferable that the joining material 13 consists of resin (A) and resin (C). In this case, the bonding material 13 preferably contains 40% by weight or more and 100% by weight or less of the resin (C) from the viewpoint of bondability.

次に、本実施形態の作用効果について説明する。
本実施形態では、槽壁11に含まれる樹脂および槽壁12に含まれる樹脂の融点または軟化点Ta、Tb以下の融点または軟化点Tcを有する樹脂(C)を接合材13が含んでいる。そして、この接合材13により、槽壁11および槽壁12を接合している。
同様に、槽壁11に含まれる樹脂および底面部14に含まれる樹脂の融点または軟化点Ta、Tb以下の融点または軟化点Tcを有する樹脂(C)を接合材13が含んでいる。そして、この接合材13により、槽壁11および底面部14を接合している。
さらに、同様に、槽壁12に含まれる樹脂および底面部14に含まれる樹脂の融点または軟化点Ta、Tb以下の融点または軟化点Tcを有する樹脂(C)を接合材13が含んでいる。そして、この接合材13により、槽壁12および底面部14を接合している。
樹脂(C)のTcが樹脂(A)のTa、樹脂(B)のTb以下であるため、接合材13の溶融時の易動性が向上し、熱溶融時に被接合物表面に対して拡散しやすくなり、接合が強固なものとなると思われる。
そのため、接合材13と槽壁11との密着性、接合材13と槽壁12との密着性、接合材13と底面部14との密着性が良好であり、処理槽1の液体漏れを抑制することができ、気密信頼性の高いものとすることができる。
Next, the effect of this embodiment is demonstrated.
In the present embodiment, the bonding material 13 includes the resin contained in the tank wall 11 and the resin (C) having a melting point or softening point Tc equal to or lower than the melting point or softening point Ta of the resin contained in the tank wall 12. The tank wall 11 and the tank wall 12 are bonded together by the bonding material 13.
Similarly, the bonding material 13 includes a resin (C) having a melting point or softening point Tc equal to or lower than the melting point or softening point Ta of the resin contained in the tank wall 11 and the resin contained in the bottom surface part 14. And the tank wall 11 and the bottom face part 14 are joined by this joining material 13.
Further, similarly, the bonding material 13 includes a resin (C) having a melting point or softening point Tc equal to or lower than the melting point or softening point Ta of the resin contained in the tank wall 12 and the resin contained in the bottom surface part 14. And the tank wall 12 and the bottom face part 14 are joined by this joining material 13.
Since the Tc of the resin (C) is equal to or less than the Ta of the resin (A) and the Tb of the resin (B), the mobility of the bonding material 13 is improved and the diffusion to the surface of the object to be bonded at the time of thermal melting. It seems that it becomes easy to do, and joining becomes strong.
Therefore, the adhesiveness between the bonding material 13 and the tank wall 11, the adhesiveness between the bonding material 13 and the tank wall 12, and the adhesiveness between the bonding material 13 and the bottom surface part 14 are good, and the liquid leakage of the processing tank 1 is suppressed. And airtight reliability can be high.

接合材13を使用せずに、直接、槽壁同士等を接合した場合には、熱容量の非常に大きな槽壁等を加熱しなければならず、作業性に劣る。
これに対し、本実施形態では、接合材13を使用して、接合を行っている。接合材13は、槽壁11等に比べ大きさが小さいため、熱容量も小さい。接合材13を加熱して溶融することは比較的容易であるため接合の作業効率を向上させることができる。
When the tank walls and the like are directly joined without using the bonding material 13, the tank walls having a very large heat capacity must be heated, which is inferior in workability.
In contrast, in the present embodiment, bonding is performed using the bonding material 13. Since the bonding material 13 is smaller than the tank wall 11 and the like, the heat capacity is also small. Since it is relatively easy to heat and melt the bonding material 13, it is possible to improve the working efficiency of the bonding.

なお、本発明は前述の実施形態に限定されるものではなく、本発明の目的を達成できる範囲での変形、改良等は本発明に含まれるものである。
たとえば、前記実施形態では、接合材13を溶接棒としたが、これに限られるものではない。
たとえば、図4(b)に示すように、槽壁12の表面に、接合材として樹脂(C)の粉末を塗布し、この粉末を溶融させ、槽壁12の表面と、槽壁11の端面とを接合させてもよい(図4(a))。なお、図4(b)の斜線部分は、前記粉末が塗布された領域を示す。
この場合にも、前記粉末は、槽壁11、12それぞれに融着することとなる。
また、槽壁12の表面と、槽壁11の端面とを接合させず、たとえば、槽壁12の端面と、槽壁11の端面とを、接合材として樹脂(C)の粉末を介して接合して、一枚の槽壁を作製してもよい。
塗布の方法として、樹脂(C)の粉末を炭化水素系などの適当な溶剤に溶解したワニスを使用する方法を採ることもできる。
It should be noted that the present invention is not limited to the above-described embodiments, and modifications, improvements, and the like within the scope that can achieve the object of the present invention are included in the present invention.
For example, in the said embodiment, although the joining material 13 was made into the welding rod, it is not restricted to this.
For example, as shown in FIG. 4 (b), a resin (C) powder is applied as a bonding material to the surface of the tank wall 12, the powder is melted, and the surface of the tank wall 12 and the end face of the tank wall 11. May be joined (FIG. 4A). In addition, the shaded part in FIG. 4B shows a region where the powder is applied.
Also in this case, the powder is fused to the tank walls 11 and 12, respectively.
Moreover, the surface of the tank wall 12 and the end face of the tank wall 11 are not joined, for example, the end face of the tank wall 12 and the end face of the tank wall 11 are joined via a resin (C) powder as a joining material. And you may produce one tank wall.
As a coating method, a method of using a varnish obtained by dissolving a powder of the resin (C) in a suitable solvent such as a hydrocarbon can be used.

さらに、前記実施形態では、接合体を処理槽1としたが、これに限られるものではない。
たとえば、本発明の接合体を、半導体ウェハを搬送するウェハのキャリアとしてもよい。
図5に示すように、上面でウェハWを保持する保持部21を樹脂(A)を含む第一部品、保持部21が固定されるキャリア本体22を樹脂(B)を含む第二部品とし、保持部21とキャリア本体22とを接合材としての樹脂(C)(図示略)を介して接合してもよい。接合材としての樹脂(C)は溶融し、保持部21とキャリア本体22とに融着する。
さらに、本発明の接合体を半導体ウェハだけでなく、太陽電池用ウェハ(太陽電池用シリコンウェハ)や液晶ガラスの処理槽(湿式処理する処理槽)、処理工程周辺部材に使うこともできる。
また、本発明の接合体を、MEMS製造用のエッチング槽として使用してもよい。たとえば、MEMSを製造する際に、半導体ウェハ上に形成された膜をエッチングする際のエッチング槽としてもよい。
さらに、本発明の接合体をウェハを洗浄槽内に搬送するためのメカニカルハンド等としてもよい(図6,7参照)。このメカニカルハンド3は、ウェハWを保持する保持棒32と、保持棒32が固定される本体部31とを備える。保持棒32および本体部31は、洗浄液(薬液)中にウェハWを浸す際に洗浄液に接触する。
保持棒32には、ウェハWの周縁部が挿入される凹部が形成されている。この保持棒32をたとえば、樹脂(A)を含む第一部品とし、本体部31を樹脂(B)を含む第二部品とし、図示しない接合材としての樹脂(C)の粉末を介して保持棒32と本体部31とを接合してもよい。前記粉末は、保持棒32、本体部31それぞれに融着することとなる。
以下、参考形態の例を付記する。
<1>
樹脂(A)を含む第一部品と、
樹脂(B)を含む第二部品と、
前記第一部品と前記第二部品とを接合し、樹脂(C)を含む接合材と、を備え、
前記樹脂(C)の融点または軟化点(Tc)は、前記樹脂(A)の融点または軟化点(Ta)および前記樹脂(B)の融点または軟化点(Tb)以下である接合体。
<2>
<1>に記載の接合体において、
前記樹脂(C)は、樹脂(A)および樹脂(B)に対し融着している接合体。
<3>
<1>に記載の接合体において、
前記樹脂(C)の融点または軟化点(Tc)は、前記樹脂(A)の融点または軟化点(Ta)および前記樹脂(B)の融点または軟化点(Tb)未満である接合体。
<4>
<1>に記載の接合体において、
前記樹脂(A)、(B)、(C)はそれぞれ、塩化ビニル樹脂およびフッ素樹脂を除く樹脂である接合体。
<5>
<1>乃至<4>のいずれかに記載の接合体において、
前記樹脂(A)は、前記樹脂(B)と同じ樹脂であり、
前記接合材は、前記樹脂(C)と、前記樹脂(A)とを含む接合体。
<6>
<5>に記載の接合体において、
前記第一部品は、前記樹脂(A)からなるものであり、
前記第二部品は、前記樹脂(B)からなるものであり、
前記接合材は、前記樹脂(C)と、前記樹脂(A)とからなるものである接合体。
<7>
<1>乃至<6>のいずれかに記載の接合体において、
前記第一部品および前記第二部品は、成型体であり、
前記第一部品と前記第二部品との間に前記接合材を配置し、この接合材を介して前記第一部品および前記第二部品が接合されている接合体。
<8>
<1>乃至<7>のいずれかに記載の接合体において、
前記第一部品と前記第二部品とを突き合わせ、前記第一部品および前記第二部品間に形成される隙間に溶接棒である前記接合材を挿入した接合体。
<9>
<1>乃至<8>のいずれかに記載の接合体において、
当該接合体は、半導体ウェハまたは太陽電池用のウェハを湿式処理するための処理槽であり、
前記第一部品および前記第二部品はそれぞれ前記処理槽の槽壁である接合体。
<10>
樹脂(A)を含む第一部品と、
樹脂(B)を含む第二部品とを接合するための接合材であって、
樹脂(C)を含み、
前記樹脂(C)の融点または軟化点(Tc)は、前記樹脂(A)の融点または軟化点(Ta)および前記樹脂(B)の融点または軟化点(Tb)以下である接合材。

Furthermore, in the said embodiment, although the joined body was made into the processing tank 1, it is not restricted to this.
For example, the bonded body of the present invention may be a wafer carrier for transporting a semiconductor wafer.
As shown in FIG. 5, the holding part 21 that holds the wafer W on the upper surface is a first part including the resin (A), and the carrier body 22 to which the holding part 21 is fixed is the second part including the resin (B). You may join the holding | maintenance part 21 and the carrier main body 22 via resin (C) (not shown) as a joining material. The resin (C) as the bonding material is melted and fused to the holding portion 21 and the carrier body 22.
Furthermore, the joined body of the present invention can be used not only for semiconductor wafers but also for solar cell wafers (solar cell silicon wafers), liquid crystal glass processing tanks (processing tanks for wet processing), and processing process peripheral members.
Moreover, you may use the conjugate | zygote of this invention as an etching tank for MEMS manufacture. For example, when manufacturing MEMS, it is good also as an etching tank at the time of etching the film | membrane formed on the semiconductor wafer.
Furthermore, the bonded body of the present invention may be a mechanical hand or the like for transporting the wafer into the cleaning tank (see FIGS. 6 and 7). The mechanical hand 3 includes a holding bar 32 that holds the wafer W and a main body 31 to which the holding bar 32 is fixed. The holding bar 32 and the main body 31 come into contact with the cleaning liquid when the wafer W is immersed in the cleaning liquid (chemical solution).
The holding bar 32 is formed with a recess into which the peripheral edge of the wafer W is inserted. For example, the holding bar 32 is a first part including the resin (A), the main body 31 is a second part including the resin (B), and the holding bar is interposed via a resin (C) powder as a bonding material (not shown). 32 and the main body 31 may be joined. The powder is fused to the holding rod 32 and the main body 31.
Hereinafter, examples of the reference form will be added.
<1>
A first part containing a resin (A);
A second part containing resin (B);
Bonding the first component and the second component, and a bonding material containing a resin (C),
The joined body in which the melting point or softening point (Tc) of the resin (C) is equal to or lower than the melting point or softening point (Ta) of the resin (A) and the melting point or softening point (Tb) of the resin (B).
<2>
In the joined body according to <1>,
The resin (C) is a bonded body fused to the resin (A) and the resin (B).
<3>
In the joined body according to <1>,
The joined body in which the melting point or softening point (Tc) of the resin (C) is less than the melting point or softening point (Ta) of the resin (A) and the melting point or softening point (Tb) of the resin (B).
<4>
In the joined body according to <1>,
The said resin (A), (B), (C) is a joined body which is resin except a vinyl chloride resin and a fluororesin, respectively.
<5>
In the joined body according to any one of <1> to <4>,
The resin (A) is the same resin as the resin (B),
The bonding material is a bonded body including the resin (C) and the resin (A).
<6>
In the joined body according to <5>,
The first part is made of the resin (A),
The second part is made of the resin (B),
The joined material is composed of the resin (C) and the resin (A).
<7>
In the joined body according to any one of <1> to <6>,
The first part and the second part are molded bodies,
A joined body in which the bonding material is disposed between the first component and the second component, and the first component and the second component are bonded via the bonding material.
<8>
In the joined body according to any one of <1> to <7>,
A joined body in which the first part and the second part are abutted and the joining material, which is a welding rod, is inserted into a gap formed between the first part and the second part.
<9>
In the joined body according to any one of <1> to <8>,
The joined body is a treatment tank for wet-treating a semiconductor wafer or a wafer for solar cells,
The first part and the second part are joined bodies that are tank walls of the processing tank.
<10>
A first part containing a resin (A);
A joining material for joining the second component containing the resin (B),
Including resin (C),
The bonding material wherein the melting point or softening point (Tc) of the resin (C) is equal to or lower than the melting point or softening point (Ta) of the resin (A) and the melting point or softening point (Tb) of the resin (B).

次に、本発明の実施例について説明する。
(実施例1)
前記実施形態と同様の処理槽を作製した。
(溶接棒の準備)
ポリスチレン(ビカット軟化温度87℃)(商品名PSJポリスチレン 679、PSジャパン(株)製)からなる溶接棒13を用意した。
(処理槽の作製)
ポリスチレン(ビカット軟化温度103℃)(商品名PSJポリスチレン G9504、PSジャパン(株)製)を成型し、板材(槽壁11,12、底面部14)を用意し、前記実施形態と同様に、槽壁11の端面を槽壁12の表面に対向させ、凹部15に溶接棒13を挿入した。200−250℃の熱風により、溶接棒13を溶融させて、槽壁11、12を接合した。また、槽壁11表面と、底面部14の端面とを対向させ、凹部に溶接棒13を挿入した。200−250℃の熱風により、溶接棒13を溶融させて、槽壁11と底面部14を接合した。さらに、槽壁12表面と底面部14の端面とを対向させ、凹部16に溶接棒13を挿入した。200−250℃の熱風により、溶接棒13を溶融させて、槽壁12と底面部14を接合した。以上により、処理槽1を得た。処理槽1の容量は10−1000L程度であった。
なお、ビカット軟化温度は、JIS K7206に基づいて測定したものである。
Next, examples of the present invention will be described.
Example 1
A treatment tank similar to that of the above embodiment was produced.
(Preparation of welding rod)
A welding rod 13 made of polystyrene (Vicat softening temperature 87 ° C.) (trade name PSJ polystyrene 679, manufactured by PS Japan Co., Ltd.) was prepared.
(Production of processing tank)
Polystyrene (Vicat softening temperature 103 ° C.) (trade name PSJ polystyrene G9504, manufactured by PS Japan Co., Ltd.) is molded to prepare plate materials (tank walls 11 and 12, bottom surface part 14). The end face of the wall 11 was made to oppose the surface of the tank wall 12, and the welding rod 13 was inserted into the recess 15. The welding rod 13 was melted by hot air at 200 to 250 ° C., and the tank walls 11 and 12 were joined. Moreover, the tank wall 11 surface and the end surface of the bottom face part 14 were made to oppose, and the welding rod 13 was inserted in the recessed part. The welding rod 13 was melted by hot air at 200 to 250 ° C., and the tank wall 11 and the bottom surface portion 14 were joined. Further, the surface of the tank wall 12 and the end surface of the bottom surface portion 14 were made to face each other, and the welding rod 13 was inserted into the recess 16. The welding rod 13 was melted by hot air of 200 to 250 ° C., and the tank wall 12 and the bottom surface portion 14 were joined. Thus, a treatment tank 1 was obtained. The capacity of the processing tank 1 was about 10-1000L.
The Vicat softening temperature is measured based on JIS K7206.

(実施例2)
(溶接棒の準備)
4−メチル−1−ペンテン共重合体(融点222℃)(商品名TPX MX002、三井化学(株)製)からなる溶接棒13を作製した。
(処理槽の作製)
4−メチル−1−ペンテン共重合体(融点237℃)(商品名TPX RT−18、三井化学(株)製)を成型し、板材(槽壁11,12、底面部14)を用意し、前記実施形態と同様に、槽壁11の端面を槽壁12の表面に対向させ、凹部15に溶接棒13を挿入した。300−400℃の熱風により、溶接棒13を溶融させて、槽壁11、12を接合した。また、槽壁11表面と、底面部14の端面とを対向させ、凹部に溶接棒13を挿入した。300−400℃の熱風により、溶接棒13を溶融させて、槽壁11と底面部14を接合した。さらに、槽壁12表面と底面部14の端面とを対向させ、凹部16に溶接棒13を挿入した。300−400℃の熱風により、溶接棒13を溶融させて、槽壁12と底面部14を接合した。以上により、処理槽1を得た。処理槽1の容量は10−1000L程度であった。以上により、処理槽1を得た。処理槽1の容量は10−1000L程度であった。
なお、融点は、DSCを使用し、昇温速度10℃/min、窒素雰囲気下で計測したものである。
(Example 2)
(Preparation of welding rod)
A welding rod 13 made of a 4-methyl-1-pentene copolymer (melting point: 222 ° C.) (trade name: TPX MX002, manufactured by Mitsui Chemicals, Inc.) was produced.
(Production of processing tank)
4-methyl-1-pentene copolymer (melting point: 237 ° C.) (trade name: TPX RT-18, manufactured by Mitsui Chemicals, Inc.) is molded to prepare plate materials (tank walls 11, 12, bottom surface part 14), Similar to the above embodiment, the end surface of the tank wall 11 was opposed to the surface of the tank wall 12, and the welding rod 13 was inserted into the recess 15. The welding rod 13 was melted by hot air at 300 to 400 ° C., and the tank walls 11 and 12 were joined. Moreover, the tank wall 11 surface and the end surface of the bottom face part 14 were made to oppose, and the welding rod 13 was inserted in the recessed part. The welding rod 13 was melted with hot air at 300 to 400 ° C., and the tank wall 11 and the bottom surface portion 14 were joined. Further, the surface of the tank wall 12 and the end surface of the bottom surface portion 14 were made to face each other, and the welding rod 13 was inserted into the recess 16. The welding rod 13 was melted with hot air at 300 to 400 ° C., and the tank wall 12 and the bottom surface portion 14 were joined. Thus, a treatment tank 1 was obtained. The capacity of the processing tank 1 was about 10-1000L. Thus, a treatment tank 1 was obtained. The capacity of the processing tank 1 was about 10-1000L.
In addition, melting | fusing point measured using DSC, temperature increase rate of 10 degree-C / min, and nitrogen atmosphere.

(実施例3)
(溶接棒の準備)
4−メチル−1−ペンテン共重合体(融点237℃)(商品名TPX RT−18、三井化学(株)製)からなる溶接棒13を作製した。
(処理槽の作製)
4−メチル−1−ペンテン共重合体(融点237℃)(商品名TPX RT−18、三井化学(株)製)を成型し、板材(槽壁11,12、底面部14)を用意し、前記実施形態と同様に、槽壁11の端面を槽壁12の表面に対向させ、凹部15に溶接棒13を挿入した。300−400℃の熱風により、溶接棒13を溶融させて、槽壁11、12を接合した。また、槽壁11表面と、底面部14の端面とを対向させ、凹部に溶接棒13を挿入した。300−400℃の熱風により、溶接棒13を溶融させて、槽壁11と底面部14を接合した。さらに、槽壁12表面と底面部14の端面とを対向させ、凹部16に溶接棒13を挿入した。300−400℃の熱風により、溶接棒13を溶融させて、槽壁12と底面部14を接合した。以上により、処理槽1を得た。処理槽1の容量は10−1000L程度であった。以上により、処理槽1を得た。処理槽1の容量は10−1000L程度であった。
融点は、DSCを使用し、昇温速度10℃/min、窒素雰囲気下で計測したものである。
(Example 3)
(Preparation of welding rod)
A welding rod 13 made of 4-methyl-1-pentene copolymer (melting point 237 ° C.) (trade name TPX RT-18, manufactured by Mitsui Chemicals, Inc.) was produced.
(Production of processing tank)
4-methyl-1-pentene copolymer (melting point: 237 ° C.) (trade name: TPX RT-18, manufactured by Mitsui Chemicals, Inc.) is molded to prepare plate materials (tank walls 11, 12, bottom surface part 14), Similar to the above embodiment, the end surface of the tank wall 11 was opposed to the surface of the tank wall 12, and the welding rod 13 was inserted into the recess 15. The welding rod 13 was melted by hot air at 300 to 400 ° C., and the tank walls 11 and 12 were joined. Moreover, the tank wall 11 surface and the end surface of the bottom face part 14 were made to oppose, and the welding rod 13 was inserted in the recessed part. The welding rod 13 was melted with hot air at 300 to 400 ° C., and the tank wall 11 and the bottom surface portion 14 were joined. Further, the surface of the tank wall 12 and the end surface of the bottom surface portion 14 were made to face each other, and the welding rod 13 was inserted into the recess 16. The welding rod 13 was melted with hot air at 300 to 400 ° C., and the tank wall 12 and the bottom surface portion 14 were joined. Thus, a treatment tank 1 was obtained. The capacity of the processing tank 1 was about 10-1000L. Thus, a treatment tank 1 was obtained. The capacity of the processing tank 1 was about 10-1000L.
The melting point was measured using a DSC and a heating rate of 10 ° C./min under a nitrogen atmosphere.

(比較例1)
ポリスチレン(ビカット軟化温度103℃)(商品名PSJポリスチレン G9504、PSジャパン(株)製)からなる溶接棒13を用意した。
(処理槽の作製)
ポリスチレン(ビカット軟化温度87℃)(商品名PSJポリスチレン 679、PSジャパン(株)製)を成型し、板材(槽壁11,12、底面部14)を用意し、前記実施形態と同様に、槽壁11の端面を槽壁12の表面に対向させ、凹部15に溶接棒13を挿入した。200−250℃の熱風により、溶接棒13を溶融させて、槽壁11、12を接合した。また、槽壁11表面と、底面部14の端面とを対向させ、凹部に溶接棒13を挿入した。200−250℃の熱風により、溶接棒13を溶融させて、槽壁11と底面部14を接合した。さらに、槽壁12表面と底面部14の端面とを対向させ、凹部16に溶接棒13を挿入した。200−250℃の熱風により、溶接棒13を溶融させて、槽壁12と底面部14を接合した。以上により、処理槽1を得た。処理槽1の容量は10−1000L程度であった。
なお、ビカット軟化温度は、JIS K7206に基づいて測定したものである。
(Comparative Example 1)
A welding rod 13 made of polystyrene (Vicat softening temperature 103 ° C.) (trade name: PSJ polystyrene G9504, manufactured by PS Japan Co., Ltd.) was prepared.
(Production of processing tank)
Polystyrene (Vicat softening temperature: 87 ° C.) (trade name: PSJ polystyrene 679, manufactured by PS Japan Co., Ltd.) is molded to prepare plate materials (tank walls 11 and 12, bottom surface part 14). The end face of the wall 11 was made to oppose the surface of the tank wall 12, and the welding rod 13 was inserted into the recess 15. The welding rod 13 was melted by hot air at 200 to 250 ° C., and the tank walls 11 and 12 were joined. Moreover, the tank wall 11 surface and the end surface of the bottom face part 14 were made to oppose, and the welding rod 13 was inserted in the recessed part. The welding rod 13 was melted by hot air at 200 to 250 ° C., and the tank wall 11 and the bottom surface portion 14 were joined. Further, the surface of the tank wall 12 and the end surface of the bottom surface portion 14 were made to face each other, and the welding rod 13 was inserted into the recess 16. The welding rod 13 was melted by hot air of 200 to 250 ° C., and the tank wall 12 and the bottom surface portion 14 were joined. Thus, a treatment tank 1 was obtained. The capacity of the processing tank 1 was about 10-1000L.
The Vicat softening temperature is measured based on JIS K7206.

(評価)
実施例1〜3により製造された処理槽を目視で確認したところ、製造時の加熱により、槽壁11,12、底面部14に熱変形が生じていないことがわかった。また、槽壁11,12、底面部14に熱変形が生じていないため、槽壁11と槽壁12との接合性、槽壁11と底面部14との接合性、槽壁12と底面部14との接合性が良好であった。
さらに実施例1,2で製造された処理槽は、実施例3に比べて、接合性がさらに良好であった。
一方、比較例1では、槽壁の外観を目視観察すると、規定寸法での処理槽製作が困難になる程の熱による変形が見られ、槽壁同士の接合性や、槽壁と底面部との接合性も良好ではなかった。
(Evaluation)
When the processing tank manufactured by Examples 1-3 was confirmed visually, it turned out that the thermal deformation has not arisen in the tank walls 11 and 12 and the bottom face part 14 by the heating at the time of manufacture. Further, since the tank walls 11 and 12 and the bottom surface portion 14 are not thermally deformed, the bondability between the tank wall 11 and the tank wall 12, the bondability between the tank wall 11 and the bottom surface portion 14, the tank wall 12 and the bottom surface portion. Bondability with 14 was good.
Further, the treatment tanks produced in Examples 1 and 2 had better bondability than Example 3.
On the other hand, in Comparative Example 1, when the appearance of the tank wall is visually observed, deformation due to heat is seen to make it difficult to manufacture the treatment tank with the specified dimensions, The bondability was also not good.

1 処理槽(接合体)
3 メカニカルハンド
11 槽壁
12 槽壁
13 接合材(溶接棒)
14 底面部
15 凹部
16 凹部
21 保持部
22 キャリア本体
31 本体部
32 保持棒
W ウェハ
111 切欠き
121 切欠き
141 切欠き
122 切欠き
1 Treatment tank (joint)
3 Mechanical Hand 11 Tank Wall 12 Tank Wall 13 Bonding Material (Welding Rod)
14 bottom part 15 recessed part 16 recessed part 21 holding part 22 carrier main body 31 main body part 32 holding rod W wafer 111 notch 121 notch 141 notch 122 notch

Claims (10)

樹脂(A)を含む第一部品と、
樹脂(B)を含む第二部品と、
前記第一部品と前記第二部品とを接合し、樹脂(C)を含む接合材と、を備えた半導体ウェハまたは太陽電池用のウェハを湿式処理するための処理槽であり
前記樹脂(C)の融点または軟化点(Tc)は、前記樹脂(A)の融点または軟化点(Ta)および前記樹脂(B)の融点または軟化点(Tb)以下であり、
前記第一部品及び前記第二部品は前記処理槽の槽壁であり、前記接合材は溶接棒であ処理槽
A first part containing a resin (A);
A second part containing resin (B);
A treatment tank for wet-treating a semiconductor wafer or a solar cell wafer comprising the first component and the second component, and a bonding material containing a resin (C),
The melting or softening point of the resin (C) (Tc) is Ri melting point or melting or softening point (Tb) der softening point below (Ta) and the resin (B) of the resin (A), the
Said first component and said second component is a vessel wall of the processing bath, the bonding material is welded rod der Ru treatment tank.
樹脂(A)を含む第一部品と、A first part containing a resin (A);
樹脂(B)を含む第二部品と、  A second part containing resin (B);
前記第一部品と前記第二部品とを接合し、樹脂(C)を含む接合材と、を備えた半導体ウェハまたは太陽電池用のウェハを湿式処理するための処理槽であり、  A treatment tank for wet-treating a semiconductor wafer or a solar cell wafer comprising the first component and the second component, and a bonding material containing a resin (C),
前記樹脂(C)の融点または軟化点(Tc)は、前記樹脂(A)の融点または軟化点(Ta)および前記樹脂(B)の融点または軟化点(Tb)以下であり、  The melting point or softening point (Tc) of the resin (C) is equal to or lower than the melting point or softening point (Ta) of the resin (A) and the melting point or softening point (Tb) of the resin (B).
前記第一部品及び前記第二部品は前記処理槽の槽壁であり、前記接合材は粉末である処理槽。  The first part and the second part are tank walls of the processing tank, and the bonding material is a powder.
前記粉末は、前記第一部品と前記第二部品とを突き合わせ、前記第一部品および前記第二部品間に形成される隙間に挿入された溶接棒と、前記第一部品または前記第二部品と間に、前記粉末が介在する請求項2に記載の処理槽。The powder matches the first part and the second part, a welding rod inserted in a gap formed between the first part and the second part, and the first part or the second part The processing tank according to claim 2, wherein the powder is interposed therebetween. 請求項1乃至3いずれかに記載の処理槽において、
前記樹脂(C)は、樹脂(A)および樹脂(B)に対し融着している処理槽
In the processing tank in any one of Claims 1 thru | or 3 ,
The treatment tank in which the resin (C) is fused to the resin (A) and the resin (B).
請求項1乃至4いずれかに記載の処理槽において、
前記樹脂(C)の融点または軟化点(Tc)は、前記樹脂(A)の融点または軟化点(Ta)および前記樹脂(B)の融点または軟化点(Tb)未満である処理槽
In the processing tank in any one of Claims 1 thru | or 4 ,
The processing tank in which the melting point or softening point (Tc) of the resin (C) is less than the melting point or softening point (Ta) of the resin (A) and the melting point or softening point (Tb) of the resin (B).
請求項1乃至5いずれかに記載の処理槽において、
前記樹脂(A)、(B)、(C)はそれぞれ、塩化ビニル樹脂およびフッ素樹脂を除く樹脂である処理槽
In the processing tank in any one of Claims 1 thru | or 5 ,
The resin (A), (B), (C) is a treatment tank which is a resin excluding vinyl chloride resin and fluororesin, respectively.
請求項1乃至5いずれかに記載の処理槽において、In the processing tank in any one of Claims 1 thru | or 5,
前記樹脂(A)、(B)、(C)はそれぞれ、ポリスチレン、または4−メチル−1−ペンテン(共)重合体である処理槽。  Each of the resins (A), (B), and (C) is a treatment tank made of polystyrene or 4-methyl-1-pentene (co) polymer.
請求項1乃至のいずれかに記載の処理槽において、
前記樹脂(A)は、前記樹脂(B)と同じ樹脂であり、
前記接合材は、前記樹脂(C)と、前記樹脂(A)とを含む処理槽
In the processing tank in any one of Claims 1 thru | or 7 ,
The resin (A) is the same resin as the resin (B),
The said joining material is a processing tank containing the said resin (C) and the said resin (A).
請求項に記載の処理槽において、
前記第一部品は、前記樹脂(A)からなるものであり、
前記第二部品は、前記樹脂(B)からなるものであり、
前記接合材は、前記樹脂(C)と、前記樹脂(A)とからなるものである処理槽
In the processing tank according to claim 8 ,
The first part is made of the resin (A),
The second part is made of the resin (B),
The said joining material is a processing tank which consists of said resin (C) and said resin (A).
樹脂(A)を含む第一部品と、
樹脂(B)を含む第二部品とを接合するための接合材であって、
前記第一部品及び前記第二部品は、半導体ウェハまたは太陽電池用のウェハを湿式処理するための処理槽に用いられる槽壁であり、
前記接合材は、溶接棒または粉末であり、かつ、樹脂(C)を含み、
前記樹脂(C)の融点または軟化点(Tc)は、前記樹脂(A)の融点または軟化点(Ta)および前記樹脂(B)の融点または軟化点(Tb)以下である接合材。
A first part containing a resin (A);
A joining material for joining the second component containing the resin (B),
The first part and the second part are tank walls used for a processing tank for wet processing a semiconductor wafer or a wafer for solar cells,
The bonding material is a welding rod or powder, and includes a resin (C),
The bonding material wherein the melting point or softening point (Tc) of the resin (C) is equal to or lower than the melting point or softening point (Ta) of the resin (A) and the melting point or softening point (Tb) of the resin (B).
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