JP5582796B2 - Laser thin film removal method - Google Patents

Description

  The present invention relates to a method of irradiating a predetermined region of a thin film formed on a substrate with a laser beam and removing the thin film in the region, for example.

  Conventionally, for example, when a predetermined region of a thin film 2 formed on a substrate 1 as shown in FIG. 5 (a) is removed by a laser as shown in FIG. 5 (b), as shown in FIG. 5 (c). This is performed by scanning a laser beam 3 that is directly irradiated onto the thin film 2 on the substrate 1. In FIG. 5B, 2a represents a region where the thin film 2 has been removed, and 4 in FIG. 5C represents a condenser lens.

  Or the thin film of the predetermined area | region on a board | substrate is removed by scanning the laser beam irradiated on the board | substrate through the mask (for example, patent document 1).

  However, in the method of removing the thin film by irradiating the laser beam perpendicularly to the substrate as described above, not all of the irradiated laser beam is used for removing the thin film, and a part of the laser beam is reflected on the substrate surface. To do.

  If the ratio of reflection increases, the thin film cannot be sufficiently removed. Therefore, it is necessary to lengthen the irradiation time of the laser beam or increase the energy of the irradiated laser beam. In this case, not only the energy efficiency is deteriorated, but also the thin film outside the processing region on the substrate and the substrate are thermally damaged.

JP-A-9-35624

  The problem to be solved by the present invention is that, in the conventional thin film removal by laser, a part of the laser beam irradiated on the substrate is reflected by the substrate surface, so that the energy efficiency is poor and the thin film is not sufficiently removed. It will be that. On the other hand, when the irradiation time of the laser beam is increased or the energy of the irradiated laser beam is increased, the thin film outside the processing region on the substrate and the substrate are thermally damaged.

The thin film removing method by the laser of the present invention is as follows.
In order to make maximum use of the energy of the laser beam and to suppress thermal damage to the thin film and substrate outside the processing area,
Upon removing the thin film formed on a substrate,
The thin film to be removed through the substrate is irradiated with a laser beam, and the angle of incidence of the laser beam on the substrate is relatively moved while maintaining the angle at which the reflection of the laser beam is minimized. A method for removing the thin film,
The main feature is that the laser beam is irradiated through an irradiation angle correction member disposed on the laser beam incident side of the substrate .

  In the present invention, the laser beam is irradiated through the substrate on which the thin film is formed, and the laser beam is incident on the substrate while maintaining the Brewster angle at which the reflection of the laser beam is minimized. You can make the most of your energy. Therefore, it is not necessary to lengthen the irradiation time of the laser beam or increase the energy of the irradiated laser beam, and thermal damage to the thin film outside the processing region on the substrate and the substrate can be suppressed.

It is a figure explaining the view of the thin film removal method by the laser of this invention. It is the figure which showed the 1st example of the thin film removal method by the laser of this invention. It is the figure which showed the 2nd example of the thin film removal method by the laser of this invention. (A)-(c) is the figure which showed the 3rd example of the thin film removal method by the laser of this invention. It is a figure explaining an example of the conventional thin film removal method, (a) is the figure which looked at the board | substrate in which the thin film was formed from upper direction, (b) is a figure at the time of removing the thin film of the predetermined area | region in (a) figure, c) is a view seen from the side for explaining the state when the thin film is removed.

  In the present invention, for the purpose of maximizing the energy of the laser beam, the laser beam is irradiated through the substrate on which the thin film is formed, and the incident angle of the laser beam to the substrate is the reflection of the laser beam (substrate This is achieved by maintaining the Brewster angle at which the reflection of the p-polarized component of the laser beam irradiated on the laser beam is minimized. The laser beam has a p-polarized component parallel to the incident surface and an s-polarized component perpendicular to the incident surface. The laser beam used in the present invention has at least a p-polarized component of 70% or more. Must be included.

Hereinafter, embodiments for carrying out the present invention will be described in detail with reference to FIGS.
FIG. 1 is a diagram for explaining the concept of a thin film removing method using a laser according to the present invention, and FIGS. 2 to 4 are views showing first to third examples of a thin film removing method using a laser according to the present invention.

  In order to suppress thermal damage to the thin film outside the processing region on the substrate and the substrate, the inventors apply a laser beam to the thin film 2 to be removed via the substrate 1 as shown in FIG. 3 was considered.

  In this way, when the thin film 2 is irradiated with the laser beam 3 through the substrate 1, the thin film 2 is directly irradiated with the laser beam 3 by irradiating the laser beam 3 to the boundary portion between the thin film 2 and the substrate 1. In comparison, the energy of the laser beam 3 for removing the thin film 2 can be kept low. Accordingly, thermal damage to the thin film 2 and the substrate 1 outside the processing region on the substrate 1 can be suppressed.

  At this time, as shown in FIG. 1, if the laser beam 3 is incident from an oblique direction, the path of the laser beam 3 in the thin film 2 in the processing region becomes long, so that the thin film 2 absorbs the laser beam 3. Further, the energy of the laser beam 3 for removing the thin film 2 can be kept low.

  However, when the laser beam 3 is incident from the substrate 1 side, the reflection 3a from the substrate 1 increases depending on the incident angle θ to the substrate 1. If the reflection 3a increases, in addition to energy loss, there is a possibility of damaging the optical system such as the condenser lens 4 or the like.

  Therefore, the inventors irradiate the thin film 2 with the laser beam 3 from the substrate 1 side, and also set the incident angle of the laser beam 3 to the substrate 2 to reflect the laser beam 3 by reflecting 3a as shown in FIG. We considered to keep the Brewster angle at a minimum.

  In this way, only the thin film 2 in a predetermined region can be removed with low energy, and at that time, the thermal influence on other portions can be reduced.

The present invention has been made based on the above concept.
That is, as shown in FIG. 2, the laser beam 3 is irradiated to the thin film 2 formed on the substrate 1 through the substrate 1. At this time, the incident angle θ of the laser beam 3 on the substrate 1 is performed while maintaining the Brewster angle at which the reflection of the laser beam 3 is minimized. While maintaining such a state, for example, the substrate 1 is moved relative to the laser beam 3 to remove the thin film 2 in a predetermined region.

  In the present invention, the thin film 2 formed on the substrate 1 is irradiated with the laser beam 3 through the substrate 1, so that the substrate 1 is made of a member through which the laser beam 3 passes, such as glass, a transparent resin film, a transparent resin sheet, or the like. It is an essential requirement to be a transparent member.

  Further, when removing the thin film 2 in a predetermined region, the laser beam 3 may be moved with respect to the substrate 1. Further, both the substrate 1 and the laser beam 3 may be moved.

  The present invention is not limited to the above examples, and it goes without saying that the embodiments may be changed as appropriate within the scope of the technical idea described in each claim.

  For example, when there is an obstacle through which the laser beam is transmitted on the substrate 1 side (irradiation side of the laser beam 3), in order to maintain the Brewster angle, as shown in FIG. The reflection mirror 5 may be disposed on the side so that the irradiation position can be changed.

  Further, since the Brewster angle depends on the material (refractive index) of the substrate 1 and the like, there are restrictions on the angles applied to the substrate 1 and the thin film 2, and in some cases, the boundary between the thin film 2 and the substrate 1. It becomes impossible to irradiate the portion with the laser beam 3 and an angle at which the path of the laser beam 3 in the thin film 2 in the processing region becomes long.

  In such a case, as shown in FIG. 4, an irradiation angle correction member 6 for maintaining the Brewster angle while maintaining the irradiation position of the predetermined laser beam 3 is interposed on the substrate 1 side. Good.

  The irradiation angle correction member 6 is preferably made of a material having the same or similar refractive index as that of the substrate 1, for example, an optical member such as a prism or a lens, glass that transmits the laser beam 3, or transparent resin. A transparent member such as a film or a transparent resin sheet can be used.

  In addition, the installation mode of the irradiation angle correction member 6 is such that an optical member such as a prism or a lens is moved so as to follow the irradiation position of the laser beam 3 on the substrate 1 (FIG. 4A). An optical member such as a prism or a lens or a transparent member may be provided in advance on the portion irradiated with the laser beam 3 on the first side (FIGS. 4B and 4C).

  The present invention can be applied not only to thin film removal but also to any laser processing such as fine processing as long as it is necessary to irradiate a workpiece with a laser beam.

DESCRIPTION OF SYMBOLS 1 Substrate 2 Thin film 2a Removal area 3 Laser beam 3a Reflection 4 Condensing lens 5 Reflection mirror 6 Irradiation angle correction member

Claims (2)

Upon removing the thin film formed on a substrate,
The thin film to be removed through the substrate is irradiated with a laser beam, and the angle of incidence of the laser beam on the substrate is relatively moved while maintaining the angle at which the reflection of the laser beam is minimized. A method for removing the thin film,
A method of removing a thin film using a laser, wherein the laser beam irradiation is performed through an irradiation angle correction member disposed on the laser beam incident side of the substrate .   2. The method according to claim 1, wherein the laser beam irradiation is performed at a boundary portion between the substrate and the thin film to be removed and from an oblique direction with respect to the thin film.

Images